JP4755831B2 - 低誘電率および超低誘電率のＳｉＣＯＨ誘電体膜ならびにその形成方法 - Google Patents

低誘電率および超低誘電率のＳｉＣＯＨ誘電体膜ならびにその形成方法 Download PDF

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JP4755831B2
JP4755831B2 JP2005007763A JP2005007763A JP4755831B2 JP 4755831 B2 JP4755831 B2 JP 4755831B2 JP 2005007763 A JP2005007763 A JP 2005007763A JP 2005007763 A JP2005007763 A JP 2005007763A JP 4755831 B2 JP4755831 B2 JP 4755831B2
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dielectric
dielectric material
sicoh
precursor
layer
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JP2005203794A (ja
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ステファン・エム・ゲイツ
クリストス・ディー・ディミトラコポロス
アルフレッド・グリル
ソン・ヴァン・グエン
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International Business Machines Corp
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    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
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    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
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  • Metallurgy (AREA)
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  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Insulating Materials (AREA)
JP2005007763A 2004-01-16 2005-01-14 低誘電率および超低誘電率のＳｉＣＯＨ誘電体膜ならびにその形成方法 Expired - Fee Related JP4755831B2 (ja)

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US10/758724 2004-01-16
US10/758,724 US7030468B2 (en) 2004-01-16 2004-01-16 Low k and ultra low k SiCOH dielectric films and methods to form the same

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JP4755831B2 true JP4755831B2 (ja) 2011-08-24

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JP2008224431A Expired - Fee Related JP4833268B2 (ja) 2004-01-16 2008-09-02 低誘電率および超低誘電率のＳｉＣＯＨ誘電体膜の形成方法

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