CN100378990C - 低k和超低k SiCOH介质膜及其制作方法 - Google Patents
低k和超低k SiCOH介质膜及其制作方法 Download PDFInfo
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- CN100378990C CN100378990C CNB2005100043046A CN200510004304A CN100378990C CN 100378990 C CN100378990 C CN 100378990C CN B2005100043046 A CNB2005100043046 A CN B2005100043046A CN 200510004304 A CN200510004304 A CN 200510004304A CN 100378990 C CN100378990 C CN 100378990C
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000003989 dielectric material Substances 0.000 claims abstract description 159
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000012545 processing Methods 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
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- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 64
- 239000002243 precursor Substances 0.000 claims description 48
- 229910018557 Si O Inorganic materials 0.000 claims description 30
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- 150000002430 hydrocarbons Chemical class 0.000 claims description 25
- 239000004215 Carbon black (E152) Substances 0.000 claims description 23
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- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims description 14
- 238000010894 electron beam technology Methods 0.000 claims description 13
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 claims description 11
- NBBQQQJUOYRZCA-UHFFFAOYSA-N diethoxymethylsilane Chemical compound CCOC([SiH3])OCC NBBQQQJUOYRZCA-UHFFFAOYSA-N 0.000 claims description 8
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- RSNQKPMXXVDJFG-UHFFFAOYSA-N tetrasiloxane Chemical compound [SiH3]O[SiH2]O[SiH2]O[SiH3] RSNQKPMXXVDJFG-UHFFFAOYSA-N 0.000 claims description 4
- GJEZBVHHZQAEDB-UHFFFAOYSA-N 6-oxabicyclo[3.1.0]hexane Chemical group C1CCC2OC21 GJEZBVHHZQAEDB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 claims description 3
- 239000007800 oxidant agent Substances 0.000 claims description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 4
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- VSYLGGHSEIWGJV-UHFFFAOYSA-N diethyl(dimethoxy)silane Chemical compound CC[Si](CC)(OC)OC VSYLGGHSEIWGJV-UHFFFAOYSA-N 0.000 description 2
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- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
Description
SiCOH的k | 应力MPa | 模量GPa | 硬度GPa | 对于小于1×10<sup>-10</sup>m/sec的水中裂纹速度的最大膜厚度(微米) | 粘合强度J/m<sup>2</sup> |
2.7 | <45 | 9-15 | 0.5-2 | 2.8 | 4.0-4.5 |
2.6 | <45 | 8-13 | 0.4-1.9 | 2.7 | 4.0-4.5 |
2.5 | <45 | 7-12 | 0.35-1.8 | 2.5 | 2.5-3.9 |
2.4 | <40 | 6-11 | 0.3-1.7 | 2.3 | 2.4-3.8 |
2.3 | <40 | 5-10 | 0.25-1.6 | 1.9 | 2.2-3.7 |
2.2 | <40 | 4-9 | 0.2-1.5 | 1.5 | 2.0-3.5 |
2.1 | 20-35 | 3-8 | 0.2-1.4 | 1.3 | 1.8-3.4 |
2.0 | 20-35 | 2-7 | 0.2 | 1.1 | 1.7-3.3 |
Claims (57)
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US10/758,724 | 2004-01-16 | ||
US10/758,724 US7030468B2 (en) | 2004-01-16 | 2004-01-16 | Low k and ultra low k SiCOH dielectric films and methods to form the same |
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CN100378990C true CN100378990C (zh) | 2008-04-02 |
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JP (2) | JP4755831B2 (zh) |
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CN1645608A (zh) | 2005-07-27 |
JP4755831B2 (ja) | 2011-08-24 |
US7030468B2 (en) | 2006-04-18 |
JP2009044162A (ja) | 2009-02-26 |
JP4833268B2 (ja) | 2011-12-07 |
US20060055004A1 (en) | 2006-03-16 |
US20050156285A1 (en) | 2005-07-21 |
TW200531248A (en) | 2005-09-16 |
TWI324381B (en) | 2010-05-01 |
US7282458B2 (en) | 2007-10-16 |
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