CN100367404C - 薄膜磁性体存储器 - Google Patents
薄膜磁性体存储器 Download PDFInfo
- Publication number
- CN100367404C CN100367404C CNB031487629A CN03148762A CN100367404C CN 100367404 C CN100367404 C CN 100367404C CN B031487629 A CNB031487629 A CN B031487629A CN 03148762 A CN03148762 A CN 03148762A CN 100367404 C CN100367404 C CN 100367404C
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- China
- Prior art keywords
- memory cell
- mtj memory
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- data
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title description 22
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002184916 | 2002-06-25 | ||
JP184916/02 | 2002-06-25 | ||
JP184916/2002 | 2002-06-25 | ||
JP311463/2002 | 2002-10-25 | ||
JP2002311463A JP4646485B2 (ja) | 2002-06-25 | 2002-10-25 | 薄膜磁性体記憶装置 |
JP311463/02 | 2002-10-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1490818A CN1490818A (zh) | 2004-04-21 |
CN100367404C true CN100367404C (zh) | 2008-02-06 |
Family
ID=29738458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031487629A Expired - Fee Related CN100367404C (zh) | 2002-06-25 | 2003-06-25 | 薄膜磁性体存储器 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6928015B2 (zh) |
JP (1) | JP4646485B2 (zh) |
CN (1) | CN100367404C (zh) |
TW (1) | TW594732B (zh) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3906067B2 (ja) * | 2001-11-30 | 2007-04-18 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
JP4315703B2 (ja) * | 2003-02-27 | 2009-08-19 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
JP4403264B2 (ja) * | 2003-06-05 | 2010-01-27 | 独立行政法人産業技術総合研究所 | 環状単磁区構造微小磁性体およびその製造方法又はそれを用いた磁気記録素子 |
US6798690B1 (en) * | 2004-01-10 | 2004-09-28 | Honeywell International Inc. | Magnetic switching with expanded hard-axis magnetization volume at magnetoresistive bit ends |
US7448012B1 (en) | 2004-04-21 | 2008-11-04 | Qi-De Qian | Methods and system for improving integrated circuit layout |
JP2005317739A (ja) * | 2004-04-28 | 2005-11-10 | Toshiba Corp | 磁気記憶装置およびその製造方法 |
JP2006135292A (ja) * | 2004-10-08 | 2006-05-25 | Toshiba Corp | 磁気抵抗効果素子 |
JP4630747B2 (ja) * | 2005-07-15 | 2011-02-09 | 株式会社東芝 | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
JP2006185961A (ja) * | 2004-12-24 | 2006-07-13 | Toshiba Corp | 磁気ランダムアクセスメモリ |
KR100621774B1 (ko) * | 2005-04-08 | 2006-09-15 | 삼성전자주식회사 | 반도체 메모리 장치에서의 레이아웃구조 및 그에 따른레이아웃 방법 |
US7777261B2 (en) * | 2005-09-20 | 2010-08-17 | Grandis Inc. | Magnetic device having stabilized free ferromagnetic layer |
JP4840720B2 (ja) * | 2005-10-06 | 2011-12-21 | セイコーエプソン株式会社 | 半導体記憶装置および電子機器 |
JP4609722B2 (ja) * | 2005-12-09 | 2011-01-12 | セイコーエプソン株式会社 | 強誘電体記憶装置および電子機器 |
US20090168126A1 (en) * | 2006-02-22 | 2009-07-02 | Nippon Sheet Glass Co., Ltd. | Light Emitting Unit, Lighting Apparatus and Image Reading Apparatus |
JP2007311488A (ja) * | 2006-05-17 | 2007-11-29 | Toshiba Corp | 磁気記憶装置 |
US7880160B2 (en) * | 2006-05-22 | 2011-02-01 | Qimonda Ag | Memory using tunneling field effect transistors |
US7447061B1 (en) * | 2007-03-02 | 2008-11-04 | The United States Of America As Represented By The Secretary Of The Navy | Magnetoresistive memory array circuit |
US7508700B2 (en) * | 2007-03-15 | 2009-03-24 | Magic Technologies, Inc. | Method of magnetic tunneling junction pattern layout for magnetic random access memory |
US7643337B2 (en) * | 2007-07-17 | 2010-01-05 | Macronix International Co., Ltd. | Multi-bit flash memory and reading method thereof |
DE102008021618A1 (de) * | 2007-11-28 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Chipanordnung, Anschlussanordnung, LED sowie Verfahren zur Herstellung einer Chipanordnung |
JP2009283665A (ja) * | 2008-05-22 | 2009-12-03 | Toshiba Corp | 不揮発性半導体記憶装置 |
KR20090125378A (ko) * | 2008-06-02 | 2009-12-07 | 삼성전자주식회사 | 메모리 장치 및 이를 포함하는 데이터 저장 장치 |
US7894248B2 (en) * | 2008-09-12 | 2011-02-22 | Grandis Inc. | Programmable and redundant circuitry based on magnetic tunnel junction (MTJ) |
US7881096B2 (en) * | 2008-10-08 | 2011-02-01 | Seagate Technology Llc | Asymmetric write current compensation |
JP5412640B2 (ja) * | 2008-11-13 | 2014-02-12 | ルネサスエレクトロニクス株式会社 | 磁気メモリ装置 |
US8021712B2 (en) * | 2009-03-18 | 2011-09-20 | Tdk Corporation | Wafer and manufacturing method of electronic component |
US8208290B2 (en) * | 2009-08-26 | 2012-06-26 | Qualcomm Incorporated | System and method to manufacture magnetic random access memory |
US8551853B2 (en) | 2010-07-08 | 2013-10-08 | Panasonic Corporation | Non-volatile semiconductor memory device and manufacturing method thereof |
US8441850B2 (en) * | 2010-10-08 | 2013-05-14 | Qualcomm Incorporated | Magnetic random access memory (MRAM) layout with uniform pattern |
JP5703041B2 (ja) | 2011-01-27 | 2015-04-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR20120132287A (ko) * | 2011-05-27 | 2012-12-05 | 삼성전자주식회사 | 반도체 메모리 장치, 반도체 메모리 패키지 및 반도체 메모리 장치의 집적도 증대 방법 |
US20150055410A1 (en) * | 2011-06-06 | 2015-02-26 | Magsil Corporation | Memory circuit and method for dissipating external magnetic field |
DE102013103968B4 (de) | 2012-04-30 | 2023-05-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Layout eines MOS-Array-Randes mit Glättung des Dichtegradienten |
JP5916524B2 (ja) * | 2012-06-07 | 2016-05-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2015122365A1 (ja) * | 2014-02-17 | 2015-08-20 | 凸版印刷株式会社 | 薄膜トランジスタアレイ装置、el装置、センサ装置、薄膜トランジスタアレイ装置の駆動方法、el装置の駆動方法、および、センサ装置の駆動方法 |
US9159410B1 (en) * | 2014-06-04 | 2015-10-13 | International Business Machines Corporation | Accessing a resistive memory storage device |
US20160254318A1 (en) * | 2015-02-27 | 2016-09-01 | Qualcomm Incorporated | MAGNETIC RANDOM ACCESS MEMORY (MRAM) BIT CELLS EMPLOYING SOURCE LINES (SLs) AND/OR BIT LINES (BLs) DISPOSED IN MULTIPLE, STACKED METAL LAYERS TO REDUCE MRAM BIT CELL RESISTANCE |
US10199568B2 (en) | 2016-03-10 | 2019-02-05 | Toshiba Memory Corporation | Magnetic storage device and manufacturing method of magnetic storage device |
KR101944037B1 (ko) * | 2017-09-04 | 2019-01-30 | 주식회사 맴레이 | 저항 변화 메모리 기반 가속기 |
KR20180120019A (ko) * | 2017-04-26 | 2018-11-05 | 에스케이하이닉스 주식회사 | 반도체 소자 및 이의 제조 방법 |
KR102266035B1 (ko) | 2017-05-26 | 2021-06-17 | 삼성전자주식회사 | 자기 저항 메모리 장치의 제조 방법 및 이를 포함하는 반도체 칩 제조 방법 |
CN110197836B (zh) * | 2018-02-27 | 2022-06-03 | 上海磁宇信息科技有限公司 | 含阵列内哑元的mram阵列 |
US11424250B2 (en) * | 2020-08-27 | 2022-08-23 | Qualcomm Incorporated | Memory |
CN114566517A (zh) * | 2020-11-27 | 2022-05-31 | 联华电子股份有限公司 | 半导体元件 |
CN114725155A (zh) * | 2021-01-06 | 2022-07-08 | 联华电子股份有限公司 | 半导体元件 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6317376B1 (en) * | 2000-06-20 | 2001-11-13 | Hewlett-Packard Company | Reference signal generation for magnetic random access memory devices |
CN1345071A (zh) * | 2000-09-15 | 2002-04-17 | 惠普公司 | 一次写入薄膜存储器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3450657B2 (ja) * | 1997-07-16 | 2003-09-29 | 株式会社東芝 | 半導体記憶装置 |
JP3110328B2 (ja) * | 1996-11-19 | 2000-11-20 | 日本電気アイシーマイコンシステム株式会社 | 半導体記憶装置 |
US6104633A (en) * | 1998-02-10 | 2000-08-15 | International Business Machines Corporation | Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices |
JP4226679B2 (ja) * | 1998-03-23 | 2009-02-18 | 株式会社東芝 | 磁気記憶装置 |
JP2001044276A (ja) * | 1999-07-30 | 2001-02-16 | Sony Corp | 半導体装置及びその製造方法 |
JP4726290B2 (ja) * | 2000-10-17 | 2011-07-20 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
JP2002198419A (ja) * | 2000-12-26 | 2002-07-12 | Nec Corp | 半導体装置の製造方法、半導体装置の設計方法 |
JP4570313B2 (ja) * | 2001-10-25 | 2010-10-27 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
US6807086B2 (en) * | 2001-11-30 | 2004-10-19 | Kabushiki Kaisha Toshiba | Magnetic random access memory |
-
2002
- 2002-10-25 JP JP2002311463A patent/JP4646485B2/ja not_active Expired - Fee Related
-
2003
- 2003-05-20 US US10/441,016 patent/US6928015B2/en not_active Expired - Lifetime
- 2003-05-23 TW TW092113931A patent/TW594732B/zh not_active IP Right Cessation
- 2003-06-25 CN CNB031487629A patent/CN100367404C/zh not_active Expired - Fee Related
-
2005
- 2005-07-25 US US11/188,089 patent/US7313014B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6317376B1 (en) * | 2000-06-20 | 2001-11-13 | Hewlett-Packard Company | Reference signal generation for magnetic random access memory devices |
CN1345071A (zh) * | 2000-09-15 | 2002-04-17 | 惠普公司 | 一次写入薄膜存储器 |
Also Published As
Publication number | Publication date |
---|---|
US20060002216A1 (en) | 2006-01-05 |
CN1490818A (zh) | 2004-04-21 |
US7313014B2 (en) | 2007-12-25 |
TW594732B (en) | 2004-06-21 |
JP4646485B2 (ja) | 2011-03-09 |
TW200404286A (en) | 2004-03-16 |
JP2004088045A (ja) | 2004-03-18 |
US6928015B2 (en) | 2005-08-09 |
US20030235070A1 (en) | 2003-12-25 |
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