ATE517435T1 - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
ATE517435T1
ATE517435T1 AT08869339T AT08869339T ATE517435T1 AT E517435 T1 ATE517435 T1 AT E517435T1 AT 08869339 T AT08869339 T AT 08869339T AT 08869339 T AT08869339 T AT 08869339T AT E517435 T1 ATE517435 T1 AT E517435T1
Authority
AT
Austria
Prior art keywords
field effect
effect transistor
atom
amorphous oxide
group
Prior art date
Application number
AT08869339T
Other languages
English (en)
Inventor
Naho Itagaki
Amita Goyal
Tatsuya Iwasaki
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE517435T1 publication Critical patent/ATE517435T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
AT08869339T 2008-01-08 2008-12-25 Feldeffekttransistor ATE517435T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008001336A JP5213458B2 (ja) 2008-01-08 2008-01-08 アモルファス酸化物及び電界効果型トランジスタ
PCT/JP2008/073924 WO2009087943A1 (en) 2008-01-08 2008-12-25 Amorphous oxide and field effect transistor

Publications (1)

Publication Number Publication Date
ATE517435T1 true ATE517435T1 (de) 2011-08-15

Family

ID=40503360

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08869339T ATE517435T1 (de) 2008-01-08 2008-12-25 Feldeffekttransistor

Country Status (7)

Country Link
US (1) US8212248B2 (de)
EP (1) EP2240965B1 (de)
JP (1) JP5213458B2 (de)
CN (1) CN101911304B (de)
AT (1) ATE517435T1 (de)
TW (1) TWI433312B (de)
WO (1) WO2009087943A1 (de)

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KR100987840B1 (ko) * 2007-04-25 2010-10-13 주식회사 엘지화학 박막 트랜지스터 및 이의 제조방법
JP2009123957A (ja) * 2007-11-15 2009-06-04 Sumitomo Chemical Co Ltd 酸化物半導体材料及びその製造方法、電子デバイス及び電界効果トランジスタ
CN101911303B (zh) * 2007-12-25 2013-03-27 出光兴产株式会社 氧化物半导体场效应晶体管及其制造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置

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US20100276685A1 (en) 2010-11-04
US8212248B2 (en) 2012-07-03
CN101911304A (zh) 2010-12-08
TWI433312B (zh) 2014-04-01
JP2009164393A (ja) 2009-07-23
CN101911304B (zh) 2012-09-26
JP5213458B2 (ja) 2013-06-19
EP2240965A1 (de) 2010-10-20
WO2009087943A1 (en) 2009-07-16
TW200945573A (en) 2009-11-01

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