TW200802864A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
TW200802864A
TW200802864A TW096106876A TW96106876A TW200802864A TW 200802864 A TW200802864 A TW 200802864A TW 096106876 A TW096106876 A TW 096106876A TW 96106876 A TW96106876 A TW 96106876A TW 200802864 A TW200802864 A TW 200802864A
Authority
TW
Taiwan
Prior art keywords
field effect
effect transistor
independently represent
atom
formulae
Prior art date
Application number
TW096106876A
Other languages
Chinese (zh)
Inventor
Masaaki Ikeda
Hirokazu Kuwabara
Chihaya Adachi
Kazuo Takimiya
Original Assignee
Nippon Kayaku Kk
Univ Hiroshima
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Kayaku Kk, Univ Hiroshima filed Critical Nippon Kayaku Kk
Publication of TW200802864A publication Critical patent/TW200802864A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

Disclosed is a field effect transistor characterized by containing at least one compound represented by the formula (1), (2) or (3) below, and an electron-transporting semiconductor material. (1) (2) (3) (In the formulae, X1-X6 independently represent a sulfur atom, a selenium atom or a tellurium atom, and R1-R6 independently represent an optionally substituted aromatic group.)
TW096106876A 2006-03-31 2007-02-27 Field effect transistor TW200802864A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006099683 2006-03-31

Publications (1)

Publication Number Publication Date
TW200802864A true TW200802864A (en) 2008-01-01

Family

ID=38655211

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106876A TW200802864A (en) 2006-03-31 2007-02-27 Field effect transistor

Country Status (3)

Country Link
JP (1) JP5167560B2 (en)
TW (1) TW200802864A (en)
WO (1) WO2007125671A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394306B (en) * 2008-08-26 2013-04-21 Univ Nat Chiao Tung Optoelectronic memory device and method for manufacturing and measuring the same
US8440713B2 (en) 2008-04-17 2013-05-14 Ricoh Company, Ltd. [1]benzothieno[3,2-B][1]benzothiophene compound and method for producing the same, and organic electronic device using the same
TWI493764B (en) * 2008-04-24 2015-07-21 Merck Patent Gmbh Electronic device
CN102224158B (en) * 2008-11-21 2015-09-16 日本化药株式会社 New heterogeneous ring compound and uses thereof

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2516688B2 (en) * 1989-08-02 1996-07-24 シャープ株式会社 Liquid crystal display
WO2008146597A1 (en) * 2007-05-24 2008-12-04 Nippon Kayaku Kabushiki Kaisha Method for producing aromatic compound
JP5252482B2 (en) * 2008-03-31 2013-07-31 国立大学法人広島大学 Light emitting element
JP5420191B2 (en) * 2008-04-25 2014-02-19 山本化成株式会社 Organic transistor
JP2010010549A (en) * 2008-06-30 2010-01-14 Konica Minolta Holdings Inc Method of manufacturing thin film transistor, and thin film transistor
JP2010016037A (en) * 2008-07-01 2010-01-21 Konica Minolta Holdings Inc Method of manufacturing thin film transistor
US7812346B2 (en) * 2008-07-16 2010-10-12 Cbrite, Inc. Metal oxide TFT with improved carrier mobility
KR101829309B1 (en) * 2010-01-22 2018-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
DE102010031897A1 (en) 2010-07-21 2012-01-26 Heraeus Clevios Gmbh Semiconductors based on substituted [1] benzothieno [3,2-b] [1] benzothiophenes
CN103534830B (en) 2011-03-10 2017-03-01 国立大学法人东京工业大学 Organic semiconducting materials
KR20140009023A (en) * 2012-07-13 2014-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2017159025A1 (en) 2016-03-15 2017-09-21 ソニー株式会社 Photoelectric conversion element and solid state image pick-up device
KR102631401B1 (en) * 2018-08-28 2024-01-29 삼성전자주식회사 Compound and thin film transistor and electronic device
US11066418B2 (en) 2018-11-26 2021-07-20 Samsung Electronics Co., Ltd. Compound and thin film transistor and electronic device
WO2023276827A1 (en) 2021-06-30 2023-01-05 ソニーセミコンダクタソリューションズ株式会社 Semiconductor element and semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278127B1 (en) * 1994-12-09 2001-08-21 Agere Systems Guardian Corp. Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor
JP4157463B2 (en) * 2003-11-27 2008-10-01 独立行政法人科学技術振興機構 Novel benzodichalcogenophene derivative, method for producing the same, and organic semiconductor device using the same
JP2007273594A (en) * 2006-03-30 2007-10-18 Nippon Kayaku Co Ltd Field-effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8440713B2 (en) 2008-04-17 2013-05-14 Ricoh Company, Ltd. [1]benzothieno[3,2-B][1]benzothiophene compound and method for producing the same, and organic electronic device using the same
TWI427067B (en) * 2008-04-17 2014-02-21 Ricoh Co Ltd [1]benzothieno[3,2-b][1]benzothiophene compound and method for producing the same, and organic electronic device using the same
TWI493764B (en) * 2008-04-24 2015-07-21 Merck Patent Gmbh Electronic device
TWI394306B (en) * 2008-08-26 2013-04-21 Univ Nat Chiao Tung Optoelectronic memory device and method for manufacturing and measuring the same
CN102224158B (en) * 2008-11-21 2015-09-16 日本化药株式会社 New heterogeneous ring compound and uses thereof

Also Published As

Publication number Publication date
WO2007125671A1 (en) 2007-11-08
JPWO2007125671A1 (en) 2009-09-10
JP5167560B2 (en) 2013-03-21

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