JP2516688B2 - Liquid crystal display - Google Patents
Liquid crystal displayInfo
- Publication number
- JP2516688B2 JP2516688B2 JP1201605A JP20160589A JP2516688B2 JP 2516688 B2 JP2516688 B2 JP 2516688B2 JP 1201605 A JP1201605 A JP 1201605A JP 20160589 A JP20160589 A JP 20160589A JP 2516688 B2 JP2516688 B2 JP 2516688B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal layer
- conductive film
- transparent conductive
- display area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
- H05K3/361—Assembling flexible printed circuits with other printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/403—Edge contacts; Windows or holes in the substrate having plural connections on the walls thereof
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、表示装置に関し、特にその外部信号入力端
子の端子構造に関する。TECHNICAL FIELD The present invention relates to a display device, and more particularly to a terminal structure of an external signal input terminal thereof.
従来の技術 画素電極として透明導電膜を用いる液晶やエレクトロ
ルミネッセンスなどの表示装置では、従来この透明導電
膜を用いて駆動信号伝達用配線および外部信号入力端子
を形成していた。しかしながら、現在は表示装置の大形
化や高精細化が目指されており、これに伴い駆動周波数
が増大したり、駆動信号伝達用配線の抵抗が増大したり
するため、上述したように透明導電膜のみで駆動信号伝
達用の配線を形成すると、信号の遅延や電圧降下が発生
し、表示装置の表示品位の劣化や表示異常の発生などの
問題が生じている。これに対処するため、前記透明導電
膜の駆動信号伝達用配線および外部信号入力端子の上層
または下層に金属層を形成する方法が採用されている。2. Description of the Related Art In a display device such as liquid crystal or electroluminescence that uses a transparent conductive film as a pixel electrode, conventionally, the transparent conductive film is used to form a drive signal transmission line and an external signal input terminal. However, at present, there is an aim to increase the size and definition of the display device, which increases the drive frequency and the resistance of the drive signal transmission wiring. When the wiring for transmitting the drive signal is formed only by the film, signal delay and voltage drop occur, which causes problems such as deterioration of display quality of the display device and occurrence of display abnormality. In order to deal with this, a method of forming a metal layer on the upper layer or the lower layer of the drive signal transmission wiring of the transparent conductive film and the external signal input terminal is adopted.
発明が解決しようとする課題 このような先行技術では、金属層が透明導電膜の上層
にある場合には、封止部外で金属層が露出状態であり、
空気中の水蒸気や酸素、長時間にわたる放置など金属層
の種類に応じた原因で金属層に腐食が起こり、やがて消
失へと進行し、駆動信号伝達用配線の配線抵抗が増大す
るという問題がある。また金属層が透明導電膜の下層に
ある場合においても、通常透過率を維持する必要上、透
明導電膜の膜厚を薄くしており、この透明導電膜にピン
ホールが存在している場合には、上記と同様に金属層の
腐食を原因として配線抵抗が増大するという問題があ
る。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention In such a prior art, when the metal layer is on the upper layer of the transparent conductive film, the metal layer is exposed outside the sealing portion,
Corrosion of the metal layer occurs due to the type of metal layer, such as water vapor and oxygen in the air, or leaving it for a long time, and eventually it disappears, increasing the wiring resistance of the drive signal transmission wiring. . Even when the metal layer is below the transparent conductive film, the thickness of the transparent conductive film is made thin in order to maintain the normal transmittance, and when a pinhole exists in this transparent conductive film. In the same manner as above, there is a problem that the wiring resistance increases due to the corrosion of the metal layer.
一方、外部信号入力端子には、外部信号を伝達する回
路基板が、異方導電性膜などを用いた接続方式によって
接続されるが、この接続部の接続抵抗も、金属層の変
質、腐食に伴い増大する。このような駆動用信号伝達用
配線の配線抵抗および外部信号入力端子の接続部の接続
抵抗の増大のために表示品位の劣化や表示異常の発生な
どが起こり、従来の表示装置は著しく信頼性に欠けるも
のであった。On the other hand, a circuit board that transmits an external signal is connected to the external signal input terminal by a connection method using an anisotropic conductive film, etc., but the connection resistance of this connection part is also affected by the deterioration and corrosion of the metal layer. Increase with the increase. Due to the increase in the wiring resistance of the drive signal transmission wiring and the connection resistance of the connection part of the external signal input terminal, the display quality is deteriorated or the display abnormality occurs. It was lacking.
本発明の目的は、配線抵抗および接続抵抗を減少して
表示品位を向上し、信頼性を向上することができるよう
にした液晶表示装置を提供することである。An object of the present invention is to provide a liquid crystal display device capable of reducing wiring resistance and connection resistance to improve display quality and reliability.
課題を解決するための手段 本発明は、（ａ）アクティブマトリックス形液晶表示
素子であって、 一対の矩形の基板1,19間の矩形の表示部領域２に、液
晶が充填され、その表示部領域２の周辺部分でシール部
材17を用いて封止され、 一方の基板１は、他方の基板19よりも側方に突出して
おり、 前記一方の基板１上で表示部領域２には、電気絶縁層
を有するTFT素子が形成され、 前記一方の基板１上には、透明導電膜３が形成され、 この透明導電膜３は、 表示部領域２内と、その表示部領域２の外方で表示部
領域２の近傍とにわたって、かつ前記一方の基板１の端
縁1aにほぼ垂直に延びる第１膜部分3aと、 第１膜部分3aから前記端縁1aまで、前記端縁1aにほぼ
垂直に延び、第１膜部分3aの幅B5よりも広い幅B1を有
し、第１−膜部分3aの幅方向両側に突出して端子を形成
する第２膜部分3bとを有するアクティブマトリックス形
液晶表示素子と、 （ｂ）金属層４であって、この金属層４は、 第１膜部分3a上であって、表示部領域２の外方に露出
した部分と、 第２膜部分3b上であって、第１膜部分3a寄りの端部分
3b1と、その端部分3b1に連なり、第２膜部分3b上で幅方
向両側で幅方向中央に金属層非形成部９を残して前記端
縁1aまで延びる両側部分3b2,3b3とに形成され、 透明導電膜３よりも厚い金属層４と、 （ｃ）前記電気絶縁層を兼ねて形成される電気絶縁性被
覆層５であって、 金属層４上と、 第１および第２膜部分3ah3bならびに金属層４のパタ
ーンエッジ部と、 隣接する端子間領域20とを被覆し、 第２膜部分3b上で前記端縁1aまで延びる透明導電膜露
出部10を形成し、 少なくとも金属層４と同じ程度の厚みを有する電気絶
縁性被覆層５と、 （ｄ）透明導電膜露出部10に対応してリード線７が形成
される回路基板８と、 （ｅ）透明導電膜露出部10とリード線７との間に介在さ
れる異方導電性膜６とを含むことを特徴とする液晶表示
装置である。Means for Solving the Problems The present invention is (a) an active matrix type liquid crystal display device, in which a rectangular display area 2 between a pair of rectangular substrates 1 and 19 is filled with liquid crystal, and the display area is The peripheral portion of the area 2 is sealed with a seal member 17, one substrate 1 is projected more laterally than the other substrate 19, and the display area 2 is electrically connected to the display area 2 on the one substrate 1. A TFT element having an insulating layer is formed, and a transparent conductive film 3 is formed on the one substrate 1. The transparent conductive film 3 is formed in the display area 2 and outside the display area 2. A first film portion 3a extending over the vicinity of the display region 2 and substantially perpendicular to the edge 1a of the one substrate 1, and from the first film portion 3a to the edge 1a, substantially perpendicular to the edge 1a. Has a width B1 wider than the width B5 of the first film portion 3a, and protrudes on both sides in the width direction of the first-film portion 3a. And an active matrix type liquid crystal display element having a second film portion 3b forming a terminal, and (b) a metal layer 4, the metal layer 4 being on the first film portion 3a, A portion exposed to the outside of the region 2 and an end portion on the second film portion 3b and closer to the first film portion 3a.
3b1 and side portions 3b2, 3b3 which are continuous with the end portion 3b1 and extend to the end edge 1a while leaving the metal layer non-forming portion 9 on the width direction both sides on the second film portion 3b in the width direction center, A metal layer 4 thicker than the transparent conductive film 3, and (c) an electrically insulative coating layer 5 formed also as the electrically insulative layer, which is on the metal layer 4 and the first and second film portions 3ah3b and The pattern edge portion of the metal layer 4 and the adjacent inter-terminal region 20 are covered, and the transparent conductive film exposed portion 10 that extends to the edge 1a is formed on the second film portion 3b. At least to the same extent as the metal layer 4. An electrically insulating coating layer 5 having a thickness of (5), (d) a circuit board 8 on which a lead wire 7 is formed corresponding to the transparent conductive film exposed portion 10, and (e) a transparent conductive film exposed portion 10 and a lead wire 7. And an anisotropic conductive film 6 interposed between the liquid crystal display device and the liquid crystal display device.
作 用 本発明に従えば、透明導電膜３上に部分的に形成され
た金属層４を、電気絶縁性被覆層５で保護するので、金
属層４の腐食を防止することができ、またアクティブマ
トリックス形液晶表示素子の配線の低抵抗を維持するこ
とができる。Operation According to the present invention, since the metal layer 4 partially formed on the transparent conductive film 3 is protected by the electrically insulating coating layer 5, corrosion of the metal layer 4 can be prevented, and the active The low resistance of the wiring of the matrix type liquid crystal display element can be maintained.
また異方導電性膜６が接続される端子は、透明導電膜
露出部10であるので、接続抵抗の安定化を図ることがで
きる。Further, since the terminal to which the anisotropic conductive film 6 is connected is the transparent conductive film exposed portion 10, the connection resistance can be stabilized.
さらにこの透明導電膜露出部10の両側には、第２膜部
分3b上の幅方向両側に、幅方向中央に金属層非形成部９
を残して両側部分3b2,3b3とに形成される金属層４が設
けられているので、導電性に優れた接続部構造を実現す
ることができる。Further, on both sides of the transparent conductive film exposed portion 10, on both sides in the width direction on the second film portion 3b, and in the center in the width direction, the metal layer non-forming portion 9 is formed.
Since the metal layer 4 formed on the both side portions 3b2, 3b3 is provided, the connection portion structure having excellent conductivity can be realized.
実施例 本発明の一実施例を第１図から第９図を用いて説明す
る。第１図は、本発明の端子構造を有する液晶表示装置
14の断面図である。第１図中、15は配向膜、16は液晶、
17はシール部材である。第２図は、タブ（TAB）方式に
よって実装された本発明の端子構造を有する表示装置の
全体図を示す。第３図は、第２図Ｃ部の外部信号入力端
子のパターン形状を示す平面図である。第４図は第３図
のＩ−Ｉ′方向の断面構造を示す断面図、第５図は第３
図II−II′方向の断面構造を示す断面図である。Embodiment An embodiment of the present invention will be described with reference to FIGS. 1 to 9. FIG. 1 shows a liquid crystal display device having a terminal structure of the present invention.
14 is a sectional view of FIG. In FIG. 1, 15 is an alignment film, 16 is a liquid crystal,
Reference numeral 17 is a seal member. FIG. 2 shows an overall view of a display device having a terminal structure of the present invention mounted by a tab (TAB) method. FIG. 3 is a plan view showing the pattern shape of the external signal input terminal in the C portion of FIG. FIG. 4 is a sectional view showing a sectional structure in the direction II 'of FIG. 3, and FIG.
FIG. 11 is a sectional view showing a sectional structure in the direction of FIG. II-II ′.
本発明の一実施例では、第４図に示すように表示装置
の基板１にスパッタ法などを用いて透明導電膜３が形成
され、その上層にスパッタ法などを用いて金属層４が形
成される。透明導電膜３の上部の一部には第５図に示す
ように金属層４の非形成部９が設けられている。次にプ
ラズマー化学気相成長法（ｐ−CVD法と略称される）な
どを用いてこの金属層４を被覆して電気絶縁性被覆層５
が形成される。この電気絶縁性被覆層５も第５図に示す
ように、透明導電膜露出部10を残して形成される。この
とき電気絶縁性被覆層５を金属層４を被覆するだけでな
く、隣接する端子間領域20も被覆するように形成し、端
子間の絶縁性の安定化を図り、効果的となる。In one embodiment of the present invention, as shown in FIG. 4, a transparent conductive film 3 is formed on a substrate 1 of a display device by a sputtering method or the like, and a metal layer 4 is formed thereon by a sputtering method or the like. It As shown in FIG. 5, a non-formation portion 9 of the metal layer 4 is provided on a part of the upper portion of the transparent conductive film 3. Next, the metal layer 4 is coated by plasma-chemical vapor deposition (abbreviated as p-CVD method) or the like to form an electrically insulating coating layer 5.
Is formed. This electrically insulating coating layer 5 is also formed, leaving the transparent conductive film exposed portion 10, as shown in FIG. At this time, the electrically insulative coating layer 5 is formed not only to cover the metal layer 4 but also to cover the inter-terminal regions 20 adjacent to each other, which stabilizes the insulation between the terminals and is effective.
この電気絶縁性被覆層５の形成に関して重要なこと
は、金属層４を完全に被覆することである。特にパター
ンエッジ部の良好な被覆およびピンホールの防止等に留
意し、電気絶縁性被覆層５の膜厚、形成方法を設定する
必要がある。たとえばこの電気絶縁性被覆層５の厚みは
金属層４の厚みと透明導電膜３の厚みから決定される。
ピンホールを防止するためには電気絶縁性被覆層５を厚
く形成すればその効果は大きい。また、パターンエッジ
部の良好な被覆を得るために、薄いとパターンエッジ部
が露出してしまうので、少なくとも金属層４と同じ程度
の厚みの電気絶縁性被覆層５が必要である。本実施例で
は透明導電膜500〜600Å、金属層3000Åに対して3500Å
の電気絶縁性被覆層５を形成している。電気絶縁性被覆
層５を本実施例よりも厚く形成しても特に欠点は生じな
い。TFT（Thin Film Transistor）アクティブマトリッ
クス形液晶表示装置において、TFT素子の電気絶縁層と
本発明の電気絶縁性被覆層５とを兼ねる。What is important in forming the electrically insulating coating layer 5 is to completely cover the metal layer 4. In particular, it is necessary to set the film thickness and the forming method of the electrically insulating coating layer 5 in consideration of good coating of the pattern edge portion and prevention of pinholes. For example, the thickness of the electrically insulating coating layer 5 is determined by the thickness of the metal layer 4 and the thickness of the transparent conductive film 3.
In order to prevent pinholes, the effect is great if the electrically insulating coating layer 5 is formed thick. Further, in order to obtain a good coating of the pattern edge portion, the pattern edge portion is exposed when it is thin, so that the electrically insulating coating layer 5 having a thickness at least about the same as the metal layer 4 is required. In this embodiment, the transparent conductive film is 500 to 600Å, the metal layer is 3000Å, and the metal layer is 3500Å.
The electrically insulating coating layer 5 is formed. Even if the electrically insulating coating layer 5 is formed thicker than that of this embodiment, no particular drawback occurs. In a TFT (Thin Film Transistor) active matrix type liquid crystal display device, it serves as both the electrical insulating layer of the TFT element and the electrical insulating coating layer 5 of the present invention.
前述した透明導電膜３としてはITO膜（インジウム−
錫酸化物膜）、金属層４としてはMo膜（モリブデン
膜）、Ｗ膜（タングステン膜）、電気絶縁性被覆層５と
しては、SiN膜（チッ化硅素膜）、SiO2膜（酸化硅素
膜）が適当である。As the transparent conductive film 3 described above, an ITO film (indium-
Tin oxide film), Mo film (molybdenum film) as the metal layer 4, W film (tungsten film), SiN film (silicon nitride film), SiO 2 film (silicon oxide film) as the electrically insulating coating layer 5. ) Is suitable.
こうして形成された端子には第１図に示すように回路
基板８が接続され、外部信号が入力される。第１図に示
したようにこのとき接続部６のごく近傍に電気絶縁性被
覆層５で保護された金属層４が存在するため、外部信号
は最小限のロスで入力されることになる。回路基板８に
は銅などのリード線７が形成され、このリード線７と透
明導電膜３の露出部10とが異方導電性膜の接続部６を用
いて加熱加圧して接続される。アクティブマトリックス
形液晶表示素子は、一対の矩形の基板1,9間の矩形の表
示部領域２に、液晶が充填され、その表示部領域２の周
辺部分でシール部材17を用いて封止される。一方の基板
１は、他方の基板19よりも側方（第１図の右方）に突出
している。表示部領域２には、基板１上で、前述のよう
に電気絶縁層を有するTFT素子が形成される。この基板
１上には、透明導電膜３が形成される。透明導電膜３は
第１膜部分3aと第２膜部分3bとを有する。第１膜部分3a
は、表示部領域２内と、その表示部領域２の外方で表示
部領域２の近傍とにわたって、かつ基板１の端縁1aにほ
ほ垂直に、第３図に明らかなように左右方向に延びる。
第２膜部分3bは、第１膜部分3aから端縁1aまで、端縁1a
にほぼ垂直に、第３図の左右方向に延び、第１膜部分3a
の幅B5よりも第２膜部分3bの幅B1が広く（B1＞B5）、こ
の第２膜部分3bは第１膜部分3aの幅方向両側（第３図の
上下）に突出する。As shown in FIG. 1, the circuit board 8 is connected to the terminals thus formed, and external signals are input. As shown in FIG. 1, at this time, since the metal layer 4 protected by the electrically insulating coating layer 5 exists in the immediate vicinity of the connection portion 6, the external signal is input with a minimum loss. A lead wire 7 made of copper or the like is formed on the circuit board 8, and the lead wire 7 and the exposed portion 10 of the transparent conductive film 3 are heated and pressed to be connected to each other using the connection portion 6 of the anisotropic conductive film. In the active matrix type liquid crystal display device, liquid crystal is filled in a rectangular display area 2 between a pair of rectangular substrates 1 and 9, and the peripheral area of the display area 2 is sealed by a seal member 17. . One substrate 1 projects laterally (to the right in FIG. 1) with respect to the other substrate 19. In the display area 2, the TFT element having the electrically insulating layer is formed on the substrate 1 as described above. The transparent conductive film 3 is formed on the substrate 1. The transparent conductive film 3 has a first film portion 3a and a second film portion 3b. First membrane part 3a
Is within the display area 2 and outside the display area 2 and in the vicinity of the display area 2, and approximately perpendicular to the edge 1a of the substrate 1, in the left-right direction as is apparent from FIG. Extend.
The second film portion 3b includes the first film portion 3a to the edge 1a and the edge 1a.
Extending substantially in the left-right direction of FIG. 3 almost perpendicular to the first film portion 3a.
The width B1 of the second film portion 3b is wider than the width B5 of the first film portion 3b (B1> B5), and the second film portion 3b projects to both sides (upper and lower in FIG. 3) in the width direction of the first film portion 3a.
金属層４は、第１膜部分3a上であって、表示部領域２
の外方に露出した部分と、端部分3b1と、両側部分3b2,3
b3とに形成される。端縁部分3b1は、第２膜部分3b上で
あって、第１膜部分3a寄りの部分である。両側部分3b2,
3b3は、端縁部分3b1に連なり第１膜部分3b上で幅方向
（第３図の上下方向）両側で、幅方向中央に金属層非形
成部９を残して端縁1aまで第３図の右方に延びる。The metal layer 4 is on the first film portion 3a and is on the display area 2
Exposed part of the outer edge, the end part 3b1 and both side parts 3b2,3
b3 and formed. The edge portion 3b1 is a portion on the second film portion 3b and near the first film portion 3a. Both sides 3b2,
3b3 is continuous with the edge portion 3b1 and on both sides in the width direction (vertical direction in FIG. 3) on the first film portion 3b, leaving the metal layer non-forming portion 9 in the width direction center to the edge 1a. It extends to the right.
電気絶縁性被覆層５は、金属層４上と、パターンエッ
ジ部と端子間領域20とを被覆する。パターンエッジ部
は、第１および第２膜部分3a,3bならびに金属層４によ
って形成される部分であり、このことは、第４図および
第５図などから明らかである。The electrically insulating coating layer 5 covers the metal layer 4, the pattern edge portion, and the inter-terminal region 20. The pattern edge portion is a portion formed by the first and second film portions 3a and 3b and the metal layer 4, which is clear from FIGS. 4 and 5.
電気絶縁性被覆層５は、第２膜部分3b上で、端縁1aま
で延びる透明導電膜露出部10を形成する。The electrically insulating coating layer 5 forms the transparent conductive film exposed portion 10 extending to the edge 1a on the second film portion 3b.
回路基板８のリード線７は、透明導電膜露出部10に対
応して形成される。The lead wire 7 of the circuit board 8 is formed corresponding to the transparent conductive film exposed portion 10.
端子のパターン形状は、第３図に示した。第３図にお
いてB1は150μｍ、B2は110μｍ、B3は100μｍ、B4は50
μｍである。The pattern shape of the terminals is shown in FIG. In FIG. 3, B 1 is 150 μm, B 2 is 110 μm, B 3 is 100 μm, and B 4 is 50 μm.
μm.
発明の効果 本発明によれば、金属層４が電気絶縁線被覆層５によ
って被覆されているので、アクティブマトリックス形液
晶表示素子の端子の低抵抗性を確保することができる。EFFECTS OF THE INVENTION According to the present invention, since the metal layer 4 is covered with the electrically insulating wire coating layer 5, low resistance of the terminals of the active matrix type liquid crystal display element can be secured.
透明導電膜は、耐腐食性に優れており、金属層４は、
第２膜部分3b上の幅方向中央の金属層非形成部９を残し
て両側部分3b2,3b3に形成されており、したがって電気
絶縁性被覆層５は、第２膜部分3b上で単位1aまで延びる
細長い透明導電膜露出部10を形成し、この露出部10に異
方導電性膜６を介してリード線７が接続されるので、金
属層４がリード線７に近接することになり、これによっ
て低抵抗性を維持することができる。このようにして高
性能、高信頼性である液晶表示装置が実現される。The transparent conductive film has excellent corrosion resistance, and the metal layer 4 is
It is formed on both side portions 3b2, 3b3 except the metal layer non-forming portion 9 at the center in the width direction on the second film portion 3b. Therefore, the electrically insulating coating layer 5 is formed on the second film portion 3b up to the unit 1a. Since the elongated transparent conductive film exposed portion 10 is formed and the lead wire 7 is connected to the exposed portion 10 through the anisotropic conductive film 6, the metal layer 4 comes close to the lead wire 7. Therefore, low resistance can be maintained. In this way, a liquid crystal display device having high performance and high reliability is realized.
特に本発明によれば、電気絶縁性被覆層５は、アクテ
ィブマトリックス形液晶表示素子のTFTの電気絶縁層を
兼ねており、したがって製造が容易であるという利点も
ある。In particular, according to the present invention, the electrically insulating coating layer 5 also serves as the electrically insulating layer of the TFT of the active matrix type liquid crystal display element, and therefore, there is an advantage that the manufacturing is easy.
さらに本発明によれば、電気絶縁性被覆層５は、少な
くとも金属層４と同じ程度の厚みを有し、金属層４は、
透明導電膜３よりも厚いので、電気絶縁性被覆層５は、
第１および第２膜部分3a,3bならびに金属層４のパター
ンエッジ部を確実に覆うことができ、金属層４の腐食を
確実に防ぐことができるようになる。Furthermore, according to the present invention, the electrically insulating coating layer 5 has at least the same thickness as the metal layer 4, and the metal layer 4 is
Since it is thicker than the transparent conductive film 3, the electrically insulating coating layer 5 is
The pattern edge portions of the first and second film portions 3a and 3b and the metal layer 4 can be surely covered, and the corrosion of the metal layer 4 can be surely prevented.
さらに本発明によれば、透明導電膜露出部10は、第２
膜部分3b上で端縁1aまで延びるので、端縁1aで、言わば
開いており、すなわち露出部10は、閉じた領域ではない
ので、異方導電性膜６を介する露出部10とリード線７と
の接続が確実となり、導電性ペーストなどを必要とせ
ず、接続がきわめて容易であり、しかも確実であるとい
う優れた効果が達成される。Further, according to the present invention, the transparent conductive film exposed portion 10 has the second
Since it extends to the edge 1a on the film portion 3b, the edge 1a is open so to speak, that is, the exposed portion 10 is not a closed region, and therefore the exposed portion 10 and the lead wire 7 through the anisotropic conductive film 6 are connected. The excellent effect that the connection is extremely reliable, the conductive paste is not required, and the connection is extremely easy and reliable, is achieved.
第１図は本発明の端子構造を有する液晶表示装置14の断
面図、第２図はタブ（TAB）方式によって実装された本
発明の端子構造を有する表示装置の全体図、第３図は第
２図Ｃ部の外部信号入力端子のパターン形状を示す平面
図、第４図は第３図のＩ−Ｉ′方向の断面構造を示す断
面図、第５図は第３図II−II′方向の断面構造を示す断
面図である。 １……表示装置の基板、２……表示部領域、３……透明
導電膜、４……金属層、５……電気絶縁性被覆層、６…
…接続部、７……回路基板上のリード線、8,18……回路
基板、９……金属層非形成部、10……透明導電膜露出
部、12,13……駆動用IC、14……液晶表示装置、15……
配向膜、16……液晶、17……シール部材FIG. 1 is a sectional view of a liquid crystal display device 14 having a terminal structure of the present invention, FIG. 2 is an overall view of a display device having a terminal structure of the present invention mounted by a tab (TAB) method, and FIG. 2 is a plan view showing the pattern shape of the external signal input terminal of the C portion, FIG. 4 is a cross-sectional view showing the cross-sectional structure in the direction I-I 'of FIG. 3, and FIG. 5 is the direction II-II' of FIG. It is sectional drawing which shows the cross-section of this. 1 ... Display device substrate, 2 ... Display area, 3 ... Transparent conductive film, 4 ... Metal layer, 5 ... Electrically insulating coating layer, 6 ...
… Connecting part, 7 …… Lead wire on circuit board, 8,18 …… Circuit board, 9 …… Metal layer non-forming part, 10 …… Transparent conductive film exposed part, 12,13 …… Driving IC, 14 ...... Liquid crystal display, 15 ……
Alignment film, 16 …… Liquid crystal, 17 …… Seal member
Claims (1)
素子であって、 一対の矩形の基板1,19間の矩形の表示部領域２に、液晶
が充填され、その表示部領域２の周辺部分でシール部材
17を用いて封止され、 一方の基板１は、他方の基板19よりも側方に突出してお
り、 前記一方の基板１上で表示部領域２には、電気絶縁層を
有するTFT素子が形成され、 前記一方の基板１上には、透明導電膜３が形成され、 この透明導電膜３は、 表示部領域２内と、その表示部領域２の外方で表示部領
域２の近傍とにわたって、かつ前記一方の基板１の端縁
1aにほぼ垂直に延びる第１膜部分3aと、 第１膜部分3aから前記端縁1aまで、前記端縁1aにほぼ垂
直に延び、第１膜部分3aの幅B5よりも広い幅B1を有し、
第１−膜部分3aの幅方向両側に突出して端子を形成する
第２膜部分3bとを有するアクティブマトリックス形液晶
表示素子と、 （ｂ）金属層４であって、この金属層４は、 第１膜部分3a上であって、表示部領域２の外方に露出し
た部分と、 第２膜部分3b上であって、第１膜部分3a寄りの端部分3b
1と、その端部分3b1に連なり、第２膜部分3b上で幅方向
両側で幅方向中央に金属層非形成部９を残して前記端縁
1aまで延びる両側部分3b2,3b3とに形成され、 透明導電膜３よりも厚い金属層４と、 （ｃ）前記電気絶縁層を兼ねて形成される電気絶縁性被
覆層５であって、 金属層４上と、 第１および第２膜部分3ah3bならびに金属層４のパター
ンエッジ部と、 隣接する端子間領域20とを被覆し、 第２膜部分3b上で前記端縁1aまで延びる透明導電膜露出
部10を形成し、 少なくとも金属層４と同じ程度の厚みを有する電気絶縁
性被覆層５と、 （ｄ）透明導電膜露出部10に対応してリード線７が形成
される回路基板８と、 （ｅ）透明導電膜露出部10とリード線７との間に介在さ
れる異方導電性膜６とを含むことを特徴とする液晶表示
装置。1. An active matrix type liquid crystal display device comprising: (a) a rectangular display area 2 between a pair of rectangular substrates 1 and 19 filled with liquid crystal, and a peripheral area of the display area 2; Seal member
One substrate 1 is protruded to the side more than the other substrate 19, and a TFT element having an electrically insulating layer is formed in the display area 2 on the one substrate 1. A transparent conductive film 3 is formed on the one substrate 1, and the transparent conductive film 3 extends in the display area 2 and outside the display area 2 and in the vicinity of the display area 2. And the edge of the one substrate 1
A first film portion 3a extending substantially perpendicular to 1a, and a width B1 extending from the first film portion 3a to the edge 1a substantially perpendicularly to the edge 1a and wider than a width B5 of the first film portion 3a. Then
An active matrix type liquid crystal display device having a second film portion 3b which protrudes on both sides of the first-film portion 3a in the width direction and forms a terminal; and (b) a metal layer 4, the metal layer 4 comprising: A portion exposed on the outside of the display area 2 on the first film portion 3a and an end portion 3b on the second film portion 3b near the first film portion 3a.
1 and the end portion 3b1 thereof, and the metal layer non-forming portion 9 is left in the width direction center on both sides in the width direction on the second film portion 3b.
A metal layer 4 formed on both side portions 3b2, 3b3 extending to 1a and thicker than the transparent conductive film 3, and (c) an electrically insulating coating layer 5 formed also as the electrical insulating layer, the metal layer comprising: 4 and the first and second film portions 3ah3b and the pattern edge portion of the metal layer 4 and the adjacent inter-terminal regions 20 are covered, and the transparent conductive film extending to the edge 1a on the second film portion 3b is exposed. An electrically insulating coating layer 5 which forms the portion 10 and has a thickness at least about the same as the metal layer 4, and (d) a circuit board 8 on which the lead wire 7 is formed corresponding to the exposed portion 10 of the transparent conductive film, (E) A liquid crystal display device including an anisotropic conductive film 6 interposed between the transparent conductive film exposed portion 10 and the lead wire 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1201605A JP2516688B2 (en) | 1989-08-02 | 1989-08-02 | Liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1201605A JP2516688B2 (en) | 1989-08-02 | 1989-08-02 | Liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0364737A JPH0364737A (en) | 1991-03-20 |
| JP2516688B2 true JP2516688B2 (en) | 1996-07-24 |
Family
ID=16443826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1201605A Expired - Lifetime JP2516688B2 (en) | 1989-08-02 | 1989-08-02 | Liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2516688B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10170897A (en) * | 1996-12-09 | 1998-06-26 | Sony Corp | Image display device |
| JP3750239B2 (en) * | 1996-12-09 | 2006-03-01 | ソニー株式会社 | Image display device |
| JP2000275666A (en) | 1999-03-25 | 2000-10-06 | Hitachi Ltd | Liquid crystal display device |
| JP3757840B2 (en) * | 2000-11-30 | 2006-03-22 | セイコーエプソン株式会社 | Semiconductor chip mounting substrate, electro-optical device, liquid crystal device, electroluminescence device, and electronic device |
| JP3702860B2 (en) | 2001-04-16 | 2005-10-05 | セイコーエプソン株式会社 | Electro-optical device, manufacturing method thereof, and electronic apparatus |
| JP4442079B2 (en) * | 2002-08-21 | 2010-03-31 | セイコーエプソン株式会社 | Conductive connection structure, electro-optical device, and electronic apparatus |
| US7760317B2 (en) | 2003-10-14 | 2010-07-20 | Lg Display Co., Ltd. | Thin film transistor array substrate and fabricating method thereof, liquid crystal display using the same and fabricating method thereof, and method of inspecting liquid crystal display |
| CN105487305A (en) * | 2015-11-25 | 2016-04-13 | 康惠（惠州）半导体有限公司 | LCD infrared light valve device and manufacturing method thereof |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6169854U (en) * | 1984-10-12 | 1986-05-13 | ||
| JPS61127652U (en) * | 1985-01-30 | 1986-08-11 | ||
| JPH0514527Y2 (en) * | 1987-05-11 | 1993-04-19 | ||
| JP3410930B2 (en) * | 1997-06-24 | 2003-05-26 | 株式会社クボタ | Module mounting structure for photovoltaic power generation |
| JP3929620B2 (en) * | 1998-10-09 | 2007-06-13 | 株式会社カネカ | Solar cell module |
| JP4009024B2 (en) * | 1998-12-01 | 2007-11-14 | 株式会社カネカ | Thin film solar cell module |
| JP2005347395A (en) * | 2004-06-01 | 2005-12-15 | Sharp Corp | End-face sealing member of solar cell module, solar cell module employing it, and process for manufacturing solar cell module |
| JP2006100639A (en) * | 2004-09-30 | 2006-04-13 | Canon Inc | Solar cell module |
| JP4887646B2 (en) * | 2005-03-31 | 2012-02-29 | 凸版印刷株式会社 | THIN FILM TRANSISTOR DEVICE AND ITS MANUFACTURING METHOD, THIN FILM TRANSISTOR ARRAY AND THIN FILM TRANSISTOR DISPLAY |
| JP5427340B2 (en) * | 2005-10-14 | 2014-02-26 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| WO2007125671A1 (en) * | 2006-03-31 | 2007-11-08 | Nippon Kayaku Kabushiki Kaisha | Field effect transistor |
| JP2009117619A (en) * | 2007-11-06 | 2009-05-28 | Idemitsu Kosan Co Ltd | Method for manufacturing organic thin film transistor, and organic thin film transistor |
| CN103151405A (en) * | 2011-12-07 | 2013-06-12 | 杜邦太阳能有限公司 | Pad and solar panel |
-
1989
- 1989-08-02 JP JP1201605A patent/JP2516688B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0364737A (en) | 1991-03-20 |
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