JPWO2019102316A1 - 酸化物半導体を有するトランジスタ - Google Patents
酸化物半導体を有するトランジスタ Download PDFInfo
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- JPWO2019102316A1 JPWO2019102316A1 JP2019555091A JP2019555091A JPWO2019102316A1 JP WO2019102316 A1 JPWO2019102316 A1 JP WO2019102316A1 JP 2019555091 A JP2019555091 A JP 2019555091A JP 2019555091 A JP2019555091 A JP 2019555091A JP WO2019102316 A1 JPWO2019102316 A1 JP WO2019102316A1
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- oxide
- insulator
- transistor
- conductor
- oxide semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 259
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- 239000002184 metal Substances 0.000 claims abstract description 35
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 29
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- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本実施の形態では、図1を用いて、本発明の一態様である酸化物半導体を用いたトランジスタについて説明する。
図1(A)は、本発明の一態様に係るトランジスタ200の模式図である。なお、図1(A)では、図の明瞭化のために一部の要素を省いて図示している。
図1(A)に示すように、トランジスタ200は、少なくとも、ゲートとして機能するGE、およびチャネルが形成される領域CHR(以下、チャネル形成領域ともいう。)を含む酸化物半導体OSと、を有する。また、酸化物半導体OSは、ソースとして機能する領域SR、およびドレインとして機能する領域DRを有する。
本実施の形態では、半導体装置の一形態を、図2乃至図4を用いて説明する。
以下では、本発明の一態様に係るトランジスタ200を有する半導体装置の一例について説明する。図2(A)、図2(B)、および図2(C)は、本発明の一態様に係るトランジスタ200、およびトランジスタ200周辺の上面図および断面図である。図2(A)は上面図であり、図2(B)は、図2(A)に示す一点鎖線A1−A2、図2(C)は、一点鎖線A3−A4に対応する断面図である。なお、図2(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
体224と同様に、絶縁体250中の水または水素などの不純物濃度が低減されていることが好ましい。
図3には、トランジスタ200を有する半導体装置の一例を示す。図3(A)は半導体装置の上面を示す。なお、図の明瞭化のため、図3(A)において一部の膜は省略されている。また、図3(B)は、図3(A)に示す一点鎖線A1−A2に対応する断面図であり、図3(C)はA3−A4に対応する断面図である。
図4には、トランジスタ200を有する半導体装置の一例を示す。図4(A)は半導体装置の上面を示す。なお、図の明瞭化のため、図4(A)において一部の膜は省略されている。また、図4(B)は、図4(A)に示す一点鎖線A1−A2に対応する断面図であり、図4(C)はA3−A4に対応する断面図である。
図5には、トランジスタ200を有する半導体装置の一例を示す。図5(A)は半導体装置の上面を示す。なお、図の明瞭化のため、図5(A)において一部の膜は省略されている。また、図5(B)は、図5(A)に示す一点鎖線L1−L2に対応する断面図であり、図5(C)はW1−W2に対応する断面図である。
本実施の形態では、半導体装置の一形態を、図6および図7を用いて説明する。
本発明の一態様である容量素子を使用した、半導体装置(記憶装置)の一例を図6に示す。本発明の一態様の半導体装置は、トランジスタ200はトランジスタ300の上方に設けられ、容量素子100はトランジスタ300、およびトランジスタ200の上方に設けられている。なお、トランジスタ200として、先の実施の形態で説明したトランジスタ200を用いることができる。
トランジスタ300は、基板311上に設けられ、ゲート電極として機能する導電体316、ゲート絶縁体として機能する絶縁体315、基板311の一部からなる半導体領域313、およびソース領域またはドレイン領域として機能する低抵抗領域314a、および低抵抗領域314bを有する。トランジスタ300は、pチャネル型、あるいはnチャネル型のいずれでもよい。
容量素子100は、トランジスタ200の上方に設けられる。容量素子100は、第1の電極として機能する導電体110と、第2の電極として機能する導電体120、および誘電体として機能する絶縁体130とを有する。
各構造体の間には、層間膜、配線、およびプラグ等が設けられた配線層が設けられていてもよい。また、配線層は、設計に応じて複数層設けることができる。ここで、プラグまたは配線としての機能を有する導電体は、複数の構造をまとめて同一の符号を付与する場合がある。また、本明細書等において、配線と、配線と電気的に接続するプラグとが一体物であってもよい。すなわち、導電体の一部が配線として機能する場合、および導電体の一部がプラグとして機能する場合もある。
なお、トランジスタ200に、酸化物半導体を用いる場合、酸化物半導体の近傍に過剰酸素領域を有する絶縁体が設けることがある。その場合、該過剰酸素領域を有する絶縁体と、該過剰酸素領域を有する絶縁体に設ける導電体との間に、バリア性を有する絶縁体を設けることが好ましい。
本発明の一態様である半導体装置を使用した、記憶装置の一例を図7に示す。図7に示す記憶装置は、図6で示したトランジスタ200、トランジスタ300、および容量素子100を有する半導体装置に加え、トランジスタ400を有している。
トランジスタ400は、トランジスタ200と、同じ層に形成されており、並行して作製することができるトランジスタである。トランジスタ400は、第1のゲート電極として機能する導電体460(導電体460a、および導電体460b)と、第2のゲート電極として機能する導電体405(導電体405a、および導電体405b)と、ゲート絶縁層として機能する絶縁体220、絶縁体222、絶縁体224、および絶縁体450と、チャネルが形成される領域を有する酸化物430cと、ソースまたはドレインの一方として機能する導電体440a、酸化物431a、および酸化物431bと、ソースまたはドレインの他方として機能する導電体440b、酸化物432a、および酸化物432bと、導電体446(導電体446a、および導電体446b)と、を有する。
以下では、大面積基板を半導体素子ごとに分断することによって、複数の半導体装置をチップ状で取り出す場合に設けられるダイシングライン(スクライブライン、分断ライン、又は切断ラインと呼ぶ場合がある)について説明する。分断方法としては、例えば、まず、基板に半導体素子を分断するための溝(ダイシングライン)を形成した後、ダイシングラインにおいて切断し、複数の半導体装置に分断(分割)する場合がある。
本実施の形態では、図8および図9を用いて、本発明の一態様に係る、酸化物を半導体に用いたトランジスタ(以下、OSトランジスタと呼ぶ場合がある。)、および容量素子が適用されている記憶装置(以下、OSメモリ装置と呼ぶ場合がある。)について説明する。OSメモリ装置は、少なくとも容量素子と、容量素子の充放電を制御するOSトランジスタを有する記憶装置である。OSトランジスタのオフ電流は極めて小さいので、OSメモリ装置は優れた保持特性をもち、不揮発性メモリとして機能させることができる。
図8(A)にOSメモリ装置の構成の一例を示す。記憶装置1400は、周辺回路1411、およびメモリセルアレイ1470を有する。周辺回路1411は、行回路1420、列回路1430、出力回路1440、コントロールロジック回路1460を有する。
図9(A)乃至(C)に、DRAMのメモリセルの回路構成例を示す。本明細書等において、1OSトランジスタ1容量素子型のメモリセルを用いたDRAMを、DOSRAM(Dynamic Oxide Semiconductor Random Access Memory)と呼ぶ場合がある。図9(A)に示す、メモリセル1471は、トランジスタM1と、容量素子CAと、を有する。なお、トランジスタM1は、ゲート(フロントゲートと呼ぶ場合がある。)、及びバックゲートを有する。
図9(D)乃至(G)に、2トランジスタ1容量素子のゲインセル型のメモリセルの回路構成例を示す。図9(D)に示す、メモリセル1474は、トランジスタM2と、トランジスタM3と、容量素子CBと、を有する。なお、トランジスタM2は、フロントゲート(単にゲートと呼ぶ場合がある。)、及びバックゲートを有する。本明細書等において、トランジスタM2にOSトランジスタを用いたゲインセル型のメモリセルを有する記憶装置を、NOSRAM(Nonvolatile Oxide Semiconductor RAM)と呼ぶ場合がある。
本実施の形態では、図10を用いて、本発明の半導体装置が実装されたチップ1200の一例を示す。チップ1200には、複数の回路(システム)が実装されている。このように、複数の回路(システム)を一つのチップに集積する技術を、システムオンチップ(System on Chip:SoC)と呼ぶ場合がある。
本実施の形態では、先の実施の形態に示す半導体装置を用いた記憶装置の応用例について説明する。先の実施の形態に示す半導体装置は、例えば、各種電子機器(例えば、情報端末、コンピュータ、スマートフォン、電子書籍端末、デジタルカメラ(ビデオカメラも含む)、録画再生装置、ナビゲーションシステムなど)の記憶装置に適用できる。なお、ここで、コンピュータとは、タブレット型のコンピュータや、ノート型のコンピュータや、デスクトップ型のコンピュータの他、サーバシステムのような大型のコンピュータを含むものである。または、先の実施の形態に示す半導体装置は、メモリカード(例えば、SDカード)、USBメモリ、SSD(ソリッド・ステート・ドライブ)等の各種のリムーバブル記憶装置に適用される。図11にリムーバブル記憶装置の幾つかの構成例を模式的に示す。例えば、先の実施の形態に示す半導体装置は、パッケージングされたメモリチップに加工され、様々なストレージ装置、リムーバブルメモリに用いられる。
Claims (7)
- 導電体と、
酸化物半導体と、
前記導電体と、前記酸化物半導体との間に配置された絶縁体と、を有し、
前記酸化物半導体は、
インジウムと、亜鉛と、金属元素M(Mはセリウム、タングステン、モリブデンの中から選ばれる一または複数種)と、を有する、トランジスタ。 - 導電体と、
酸化物半導体と、
前記導電体と、前記酸化物半導体との間に配置された絶縁体と、を有し、
前記酸化物半導体は、
インジウムと、亜鉛と、ガリウムと、金属元素M(Mはセリウム、タングステン、モリブデンの中から選ばれる一または複数種)と、を有する、トランジスタ。 - 請求項1または請求項2において、
前記金属元素Mは、
前記酸化物半導体が有する総金属原子に対して、0.01atomic%以上1.0atomic%以下である、トランジスタ。 - 請求項1乃至請求項3のいずれか一項において、
前記金属元素Mは、
セリウムである、トランジスタ。 - 請求項1乃至請求項4のいずれか一項において、
前記酸化物半導体は、CAAC−OSを有する、トランジスタ。 - 請求項1乃至請求項5のいずれか一項において、
前記酸化物半導体は、nc−OSを有する、トランジスタ。 - 第1の酸化物、第2の酸化物、第3の酸化物、第1の導電体、第2の導電体、第3の導電体、および絶縁体を有し、
前記第1の酸化物は第1の領域、第2の領域、および第3の領域を有し、
前記第1の領域は、前記絶縁体を介して、前記第1の導電体と重畳する領域を有し、
前記第2の領域は、前記第2の酸化物を介して、前記第2の導電体と重畳し、
前記第3の領域は、前記第3の酸化物を介して、前記第3の導電体と重畳し、
前記第2の酸化物、および前記第3の酸化物は、前記第1の酸化物よりも、セリウムの含有量が多い、トランジスタ。
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