ATE491223T1 - Reaktor für die bearbeitung von halbleiterscheiben - Google Patents

Reaktor für die bearbeitung von halbleiterscheiben

Info

Publication number
ATE491223T1
ATE491223T1 AT00973909T AT00973909T ATE491223T1 AT E491223 T1 ATE491223 T1 AT E491223T1 AT 00973909 T AT00973909 T AT 00973909T AT 00973909 T AT00973909 T AT 00973909T AT E491223 T1 ATE491223 T1 AT E491223T1
Authority
AT
Austria
Prior art keywords
reactor
wafer
rotors
processing
processing semiconductor
Prior art date
Application number
AT00973909T
Other languages
English (en)
Inventor
Steven Peace
Gary Curtis
Raymon Thompson
Brian Aegerter
Curt Dundas
Original Assignee
Semitool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semitool Inc filed Critical Semitool Inc
Application granted granted Critical
Publication of ATE491223T1 publication Critical patent/ATE491223T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/913—Diverse treatments performed in unitary chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
AT00973909T 1999-11-10 2000-10-27 Reaktor für die bearbeitung von halbleiterscheiben ATE491223T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/437,711 US6423642B1 (en) 1998-03-13 1999-11-10 Reactor for processing a semiconductor wafer
PCT/US2000/029561 WO2001035454A1 (en) 1999-11-10 2000-10-27 Reactor for processing a semiconductor wafer

Publications (1)

Publication Number Publication Date
ATE491223T1 true ATE491223T1 (de) 2010-12-15

Family

ID=23737567

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00973909T ATE491223T1 (de) 1999-11-10 2000-10-27 Reaktor für die bearbeitung von halbleiterscheiben

Country Status (6)

Country Link
US (5) US6423642B1 (de)
EP (1) EP1234327B1 (de)
JP (1) JP5062934B2 (de)
AT (1) ATE491223T1 (de)
DE (1) DE60045345D1 (de)
WO (1) WO2001035454A1 (de)

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350319B1 (en) * 1998-03-13 2002-02-26 Semitool, Inc. Micro-environment reactor for processing a workpiece
US6264752B1 (en) * 1998-03-13 2001-07-24 Gary L. Curtis Reactor for processing a microelectronic workpiece
US6413436B1 (en) * 1999-01-27 2002-07-02 Semitool, Inc. Selective treatment of the surface of a microelectronic workpiece
US20050217707A1 (en) * 1998-03-13 2005-10-06 Aegerter Brian K Selective processing of microelectronic workpiece surfaces
US6900132B2 (en) * 1998-03-13 2005-05-31 Semitool, Inc. Single workpiece processing system
US6423642B1 (en) * 1998-03-13 2002-07-23 Semitool, Inc. Reactor for processing a semiconductor wafer
US6258220B1 (en) * 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
US6930046B2 (en) * 1999-01-22 2005-08-16 Semitool, Inc. Single workpiece processing system
US6969682B2 (en) * 1999-01-22 2005-11-29 Semitool, Inc. Single workpiece processing system
US6806194B2 (en) * 1999-01-22 2004-10-19 Semitool. Inc. Apparatus and methods for processing a workpiece
US6680253B2 (en) * 1999-01-22 2004-01-20 Semitool, Inc. Apparatus for processing a workpiece
US7217325B2 (en) * 1999-01-22 2007-05-15 Semitool, Inc. System for processing a workpiece
US6548411B2 (en) * 1999-01-22 2003-04-15 Semitool, Inc. Apparatus and methods for processing a workpiece
TW535192B (en) * 1999-11-16 2003-06-01 Tokyo Electron Ltd Substrate processing unit and processing method
WO2001088971A1 (fr) * 2000-05-17 2001-11-22 Tokyo Electron Limited Dispositif de traitement et procede d'entretien du dispositif, mecanisme et procede de montage d'une piece du dispositif de traitement, et mecanisme de verrouillage et procede de blocage du mecanisme de verrouillage
US20050145499A1 (en) * 2000-06-05 2005-07-07 Applied Materials, Inc. Plating of a thin metal seed layer
JP3745214B2 (ja) * 2000-09-27 2006-02-15 大日本スクリーン製造株式会社 ベベルエッチング装置およびベベルエッチング方法
US20050061676A1 (en) * 2001-03-12 2005-03-24 Wilson Gregory J. System for electrochemically processing a workpiece
US6786996B2 (en) * 2001-10-16 2004-09-07 Applied Materials Inc. Apparatus and method for edge bead removal
US6736408B2 (en) * 2002-01-25 2004-05-18 Applied Materials Inc. Rotary vacuum-chuck with venturi formed at base of rotating shaft
US20060043750A1 (en) * 2004-07-09 2006-03-02 Paul Wirth End-effectors for handling microfeature workpieces
US20040134775A1 (en) * 2002-07-24 2004-07-15 Applied Materials, Inc. Electrochemical processing cell
US7247222B2 (en) * 2002-07-24 2007-07-24 Applied Materials, Inc. Electrochemical processing cell
US20040016648A1 (en) * 2002-07-24 2004-01-29 Applied Materials, Inc. Tilted electrochemical plating cell with constant wafer immersion angle
US7223323B2 (en) * 2002-07-24 2007-05-29 Applied Materials, Inc. Multi-chemistry plating system
US7128823B2 (en) 2002-07-24 2006-10-31 Applied Materials, Inc. Anolyte for copper plating
US20040217005A1 (en) * 2002-07-24 2004-11-04 Aron Rosenfeld Method for electroplating bath chemistry control
US7018555B2 (en) * 2002-07-26 2006-03-28 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
SG171468A1 (en) * 2002-12-10 2011-06-29 Nikon Corp Exposure apparatus and method for producing device
US20040154647A1 (en) * 2003-02-07 2004-08-12 Supercritical Systems, Inc. Method and apparatus of utilizing a coating for enhanced holding of a semiconductor substrate during high pressure processing
TW200422443A (en) * 2003-02-18 2004-11-01 Applied Materials Inc Method for immersing a substrate
US7270137B2 (en) * 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
US20050035514A1 (en) * 2003-08-11 2005-02-17 Supercritical Systems, Inc. Vacuum chuck apparatus and method for holding a wafer during high pressure processing
US20050178402A1 (en) * 2004-02-12 2005-08-18 Stowell R. M. Methods and apparatus for cleaning and drying a work piece
US8082932B2 (en) * 2004-03-12 2011-12-27 Applied Materials, Inc. Single side workpiece processing
US7938942B2 (en) * 2004-03-12 2011-05-10 Applied Materials, Inc. Single side workpiece processing
US20070110895A1 (en) * 2005-03-08 2007-05-17 Jason Rye Single side workpiece processing
US20070020080A1 (en) * 2004-07-09 2007-01-25 Paul Wirth Transfer devices and methods for handling microfeature workpieces within an environment of a processing machine
US7531060B2 (en) * 2004-07-09 2009-05-12 Semitool, Inc. Integrated tool assemblies with intermediate processing modules for processing of microfeature workpieces
US20060045666A1 (en) * 2004-07-09 2006-03-02 Harris Randy A Modular tool unit for processing of microfeature workpieces
TWI366222B (en) * 2004-11-23 2012-06-11 Lam Res Ag Apparatus and method for wet treatment of wafers
US20060175201A1 (en) * 2005-02-07 2006-08-10 Hooman Hafezi Immersion process for electroplating applications
TWI324799B (en) * 2005-05-25 2010-05-11 Lam Res Corp Device and method for liquid treatment of wafer-shaped articles
KR100651919B1 (ko) * 2005-09-29 2006-12-01 엘지전자 주식회사 녹화 속도 조절 기능을 갖는 이동통신단말기 및 이를이용한 방법
US7520286B2 (en) 2005-12-05 2009-04-21 Semitool, Inc. Apparatus and method for cleaning and drying a container for semiconductor workpieces
US8104488B2 (en) * 2006-02-22 2012-01-31 Applied Materials, Inc. Single side workpiece processing
JP4816229B2 (ja) * 2006-05-09 2011-11-16 株式会社Ｓｕｍｃｏ ウェーハの枚葉式エッチング装置
JP4971078B2 (ja) * 2007-08-30 2012-07-11 東京応化工業株式会社 表面処理装置
JP2010021041A (ja) * 2008-07-11 2010-01-28 Sumco Corp イオン注入装置のウェーハ保持具
US20110217900A1 (en) * 2010-03-02 2011-09-08 Chih-Cheng Lai Safety stuffed toy and method for producing the same
WO2012121972A2 (en) * 2011-03-04 2012-09-13 Evergreen Solar, Inc. Sheet wafer growth stabilization
JP5513432B2 (ja) * 2011-03-31 2014-06-04 大日本スクリーン製造株式会社 基板周縁処理装置及び基板周縁処理方法
CA3085086C (en) 2011-12-06 2023-08-08 Delta Faucet Company Ozone distribution in a faucet
US10167552B2 (en) * 2015-02-05 2019-01-01 Lam Research Ag Spin chuck with rotating gas showerhead
US10037902B2 (en) 2015-03-27 2018-07-31 SCREEN Holdings Co., Ltd. Substrate processing device and substrate processing method
CA3007437C (en) 2015-12-21 2021-09-28 Delta Faucet Company Fluid delivery system including a disinfectant device
US20190272983A1 (en) * 2018-03-01 2019-09-05 Varian Semiconductor Equipment Associates, Inc. Substrate halo arrangement for improved process uniformity
KR20210082294A (ko) * 2019-12-24 2021-07-05 주식회사 제우스 틸팅 제어 장치
US12106943B2 (en) 2021-05-25 2024-10-01 Applied Materials, Inc. Substrate halo arrangement for improved process uniformity

Family Cites Families (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US550081A (en) * 1895-11-19 Padlock
US3727620A (en) 1970-03-18 1973-04-17 Fluoroware Of California Inc Rinsing and drying device
US3953265A (en) 1975-04-28 1976-04-27 International Business Machines Corporation Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers
JPS5212576A (en) 1975-07-21 1977-01-31 Hitachi Ltd Wafer washing drying device
JPS5819350B2 (ja) * 1976-04-08 1983-04-18 富士写真フイルム株式会社 スピンコ−テイング方法
US4132567A (en) 1977-10-13 1979-01-02 Fsi Corporation Apparatus for and method of cleaning and removing static charges from substrates
US4276855A (en) * 1979-05-02 1981-07-07 Optical Coating Laboratory, Inc. Coating apparatus
US4286541A (en) * 1979-07-26 1981-09-01 Fsi Corporation Applying photoresist onto silicon wafers
US4439244A (en) 1982-08-03 1984-03-27 Texas Instruments Incorporated Apparatus and method of material removal having a fluid filled slot
US4838289A (en) 1982-08-03 1989-06-13 Texas Instruments Incorporated Apparatus and method for edge cleaning
US4439243A (en) 1982-08-03 1984-03-27 Texas Instruments Incorporated Apparatus and method of material removal with fluid flow within a slot
JPS59208831A (ja) 1983-05-13 1984-11-27 Hitachi Tokyo Electronics Co Ltd 塗布装置
JPS609129A (ja) * 1983-06-29 1985-01-18 Fujitsu Ltd ウエツト処理装置
US4982753A (en) 1983-07-26 1991-01-08 National Semiconductor Corporation Wafer etching, cleaning and stripping apparatus
US4510176A (en) * 1983-09-26 1985-04-09 At&T Bell Laboratories Removal of coating from periphery of a semiconductor wafer
JPS60137016A (ja) 1983-12-26 1985-07-20 Mitsubishi Electric Corp 成膜装置
US4544446A (en) 1984-07-24 1985-10-01 J. T. Baker Chemical Co. VLSI chemical reactor
JPS61196534A (ja) 1985-02-26 1986-08-30 Nec Corp フオトレジスト塗布装置
US4885755A (en) * 1985-04-10 1989-12-05 Canon Kabushiki Kaisha Method and apparatus for data communication
JPS61178187U (de) 1985-04-26 1986-11-06
US4664133A (en) 1985-07-26 1987-05-12 Fsi Corporation Wafer processing machine
JPH0444216Y2 (de) 1985-10-07 1992-10-19
GB2184288A (en) 1985-12-16 1987-06-17 Nat Semiconductor Corp Oxidation inhibition of copper bonding pads using palladium
JPS62166515A (ja) 1986-01-20 1987-07-23 Hitachi Electronics Eng Co Ltd 半導体製造装置の処理カツプ
US4779877A (en) * 1986-04-22 1988-10-25 Varian Associates, Inc. Wafer support assembly
JPS636843A (ja) * 1986-06-26 1988-01-12 Dainippon Screen Mfg Co Ltd 基板現像処理方法
US4732785A (en) * 1986-09-26 1988-03-22 Motorola, Inc. Edge bead removal process for spin on films
JPS63185029A (ja) 1987-01-28 1988-07-30 Hitachi Ltd ウエハ処理装置
US5117769A (en) 1987-03-31 1992-06-02 Epsilon Technology, Inc. Drive shaft apparatus for a susceptor
US5040484A (en) * 1987-05-04 1991-08-20 Varian Associates, Inc. Apparatus for retaining wafers
JPH01120023A (ja) 1987-11-02 1989-05-12 Seiko Epson Corp スピン現像装置
AT389959B (de) 1987-11-09 1990-02-26 Sez Semiconduct Equip Zubehoer Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben
JPH01283845A (ja) 1988-05-10 1989-11-15 Matsushita Electron Corp 半導体基板の真空搬送装置
US5431421A (en) 1988-05-25 1995-07-11 Semitool, Inc. Semiconductor processor wafer holder
US5224504A (en) 1988-05-25 1993-07-06 Semitool, Inc. Single wafer processor
US5168886A (en) 1988-05-25 1992-12-08 Semitool, Inc. Single wafer processor
JPH06103687B2 (ja) 1988-08-12 1994-12-14 大日本スクリーン製造株式会社 回転式表面処理方法および回転式表面処理における処理終点検出方法、ならびに回転式表面処理装置
JPH0264646A (ja) 1988-08-31 1990-03-05 Toshiba Corp レジストパターンの現像方法及びこの方法に使用する現像装置
US4962049A (en) * 1989-04-13 1990-10-09 Applied Materials, Inc. Process for the plasma treatment of the backside of a semiconductor wafer
US5075256A (en) * 1989-08-25 1991-12-24 Applied Materials, Inc. Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
JPH03136232A (ja) 1989-08-31 1991-06-11 Dainippon Screen Mfg Co Ltd 基板の表面処理装置
US5370741A (en) * 1990-05-15 1994-12-06 Semitool, Inc. Dynamic semiconductor wafer processing using homogeneous chemical vapors
US5222310A (en) 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
DE4024576A1 (de) * 1990-08-02 1992-02-06 Bosch Gmbh Robert Vorrichtung zum einseitigen aetzen einer halbleiterscheibe
JP2887408B2 (ja) 1990-08-10 1999-04-26 株式会社荏原製作所 ウエハ洗浄装置
JP3241058B2 (ja) 1991-03-28 2001-12-25 大日本スクリーン製造株式会社 回転式塗布装置及び回転式塗布方法
JPH0513322A (ja) 1991-07-09 1993-01-22 Ryoden Semiconductor Syst Eng Kk 被膜溶剤塗布装置
JPH0521332A (ja) 1991-07-10 1993-01-29 Oki Electric Ind Co Ltd レジスト除去装置
US5439519A (en) * 1992-04-28 1995-08-08 Tokyo Ohka Kogyo Co., Ltd. Solution applying apparatus
JPH05326483A (ja) 1992-05-15 1993-12-10 Sony Corp ウエハ処理装置およびウエハ一貫処理装置
JP2654314B2 (ja) 1992-06-04 1997-09-17 東京応化工業株式会社 裏面洗浄装置
US5224503A (en) 1992-06-15 1993-07-06 Semitool, Inc. Centrifugal wafer carrier cleaning apparatus
JP3030796B2 (ja) 1992-07-24 2000-04-10 東京エレクトロン株式会社 洗浄処理方法
US5474807A (en) * 1992-09-30 1995-12-12 Hoya Corporation Method for applying or removing coatings at a confined peripheral region of a substrate
JP2877216B2 (ja) 1992-10-02 1999-03-31 東京エレクトロン株式会社 洗浄装置
US5421893A (en) 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
US5249728A (en) 1993-03-10 1993-10-05 Atmel Corporation Bumpless bonding process having multilayer metallization
KR100284556B1 (ko) * 1993-03-25 2001-04-02 다카시마 히로시 도포막 형성방법 및 그를 위한 장치
KR100248565B1 (ko) 1993-03-30 2000-05-01 다카시마 히로시 레지스트 처리방법 및 레지스트 처리장치
US5608943A (en) * 1993-08-23 1997-03-11 Tokyo Electron Limited Apparatus for removing process liquid
US5513594A (en) 1993-10-20 1996-05-07 Mcclanahan; Adolphus E. Clamp with wafer release for semiconductor wafer processing equipment
US5863348A (en) 1993-12-22 1999-01-26 International Business Machines Corporation Programmable method for cleaning semiconductor elements
JP3388628B2 (ja) 1994-03-24 2003-03-24 東京応化工業株式会社 回転式薬液処理装置
US5718763A (en) 1994-04-04 1998-02-17 Tokyo Electron Limited Resist processing apparatus for a rectangular substrate
US5656082A (en) 1994-04-04 1997-08-12 Tatsumo Kabushiki Kaisha Liquid applying apparatus utilizing centrifugal force
KR0164007B1 (ko) 1994-04-06 1999-02-01 이시다 아키라 미세 패턴화된 레지스트막을 가지는 기판의 건조처리방법 및 장치
US5745946A (en) * 1994-07-15 1998-05-05 Ontrak Systems, Inc. Substrate processing system
JP3099054B2 (ja) 1994-09-09 2000-10-16 東京エレクトロン株式会社 塗布装置及びその方法
KR100369571B1 (ko) * 1994-12-28 2003-04-10 도레이 가부시끼가이샤 도포방법및도포장치
JP3521587B2 (ja) * 1995-02-07 2004-04-19 セイコーエプソン株式会社 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法
US5551986A (en) 1995-02-15 1996-09-03 Taxas Instruments Incorporated Mechanical scrubbing for particle removal
JPH08238463A (ja) 1995-03-03 1996-09-17 Ebara Corp 洗浄方法及び洗浄装置
TW494714B (en) * 1995-04-19 2002-07-11 Tokyo Electron Ltd Method of processing substrate and apparatus for processing substrate
AT405225B (de) 1995-05-02 1999-06-25 Sez Semiconduct Equip Zubehoer Vorrichtung zum behandeln annähernd runder oder kreisscheibenförmiger gegenstände, insbesondere siliziumwafer
US5513549A (en) 1995-05-12 1996-05-07 Lewis; Charles H. Musical instrument mouthpiece cover holder
IL113739A (en) * 1995-05-15 1998-03-10 Shellcase Ltd Bonding machine
TW386235B (en) 1995-05-23 2000-04-01 Tokyo Electron Ltd Method for spin rinsing
US5762751A (en) 1995-08-17 1998-06-09 Semitool, Inc. Semiconductor processor with wafer face protection
JP3005461B2 (ja) 1995-11-24 2000-01-31 日本電気株式会社 静電チャック
US5860640A (en) 1995-11-29 1999-01-19 Applied Materials, Inc. Semiconductor wafer alignment member and clamp ring
US5616069A (en) 1995-12-19 1997-04-01 Micron Technology, Inc. Directional spray pad scrubber
US5952050A (en) 1996-02-27 1999-09-14 Micron Technology, Inc. Chemical dispensing system for semiconductor wafer processing
JP3223109B2 (ja) * 1996-04-26 2001-10-29 三洋電機株式会社 半導体装置の製造方法
TW359854B (en) 1996-06-21 1999-06-01 Tokyo Electron Ltd Processing apparatus and processing method
US6264752B1 (en) * 1998-03-13 2001-07-24 Gary L. Curtis Reactor for processing a microelectronic workpiece
US6350319B1 (en) * 1998-03-13 2002-02-26 Semitool, Inc. Micro-environment reactor for processing a workpiece
US6413436B1 (en) * 1999-01-27 2002-07-02 Semitool, Inc. Selective treatment of the surface of a microelectronic workpiece
US6004828A (en) * 1997-09-30 1999-12-21 Semitool, Inc, Semiconductor processing workpiece support with sensory subsystem for detection of wafers or other semiconductor workpieces
US5731678A (en) * 1996-07-15 1998-03-24 Semitool, Inc. Processing head for semiconductor processing machines
TW357406B (en) 1996-10-07 1999-05-01 Tokyo Electron Ltd Method and apparatus for cleaning and drying a substrate
KR100277522B1 (ko) 1996-10-08 2001-01-15 이시다 아키라 기판처리장치
US5981354A (en) * 1997-03-12 1999-11-09 Advanced Micro Devices, Inc. Semiconductor fabrication employing a flowable oxide to enhance planarization in a shallow trench isolation process
US5969424A (en) 1997-03-19 1999-10-19 Fujitsu Limited Semiconductor device with pad structure
JPH10303106A (ja) 1997-04-30 1998-11-13 Toshiba Corp 現像処理装置およびその処理方法
US6149729A (en) * 1997-05-22 2000-11-21 Tokyo Electron Limited Film forming apparatus and method
US6050446A (en) * 1997-07-11 2000-04-18 Applied Materials, Inc. Pivoting lid assembly for a chamber
US6454926B1 (en) * 1997-09-30 2002-09-24 Semitool Inc. Semiconductor plating system workpiece support having workpiece-engaging electrode with submerged conductive current transfer areas
US6399505B2 (en) * 1997-10-20 2002-06-04 Advanced Micro Devices, Inc. Method and system for copper interconnect formation
JP3210893B2 (ja) * 1997-10-21 2001-09-25 東京エレクトロン株式会社 処理装置および処理方法
US6336845B1 (en) * 1997-11-12 2002-01-08 Lam Research Corporation Method and apparatus for polishing semiconductor wafers
US5890269A (en) * 1997-12-19 1999-04-06 Advanced Micro Devices Semiconductor wafer, handling apparatus, and method
US5897379A (en) * 1997-12-19 1999-04-27 Sharp Microelectronics Technology, Inc. Low temperature system and method for CVD copper removal
JPH11204493A (ja) * 1998-01-09 1999-07-30 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
US6265328B1 (en) * 1998-01-30 2001-07-24 Silicon Genesis Corporation Wafer edge engineering method and device
TW452828B (en) * 1998-03-13 2001-09-01 Semitool Inc Micro-environment reactor for processing a microelectronic workpiece
US6423642B1 (en) * 1998-03-13 2002-07-23 Semitool, Inc. Reactor for processing a semiconductor wafer
US6632292B1 (en) * 1998-03-13 2003-10-14 Semitool, Inc. Selective treatment of microelectronic workpiece surfaces
US6318385B1 (en) * 1998-03-13 2001-11-20 Semitool, Inc. Micro-environment chamber and system for rinsing and drying a semiconductor workpiece
US6900132B2 (en) * 1998-03-13 2005-05-31 Semitool, Inc. Single workpiece processing system
JPH11283845A (ja) 1998-03-30 1999-10-15 Daihen Corp 屋内設置変圧器の冷却装置
US6268289B1 (en) * 1998-05-18 2001-07-31 Motorola Inc. Method for protecting the edge exclusion of a semiconductor wafer from copper plating through use of an edge exclusion masking layer
JPH11333354A (ja) * 1998-05-27 1999-12-07 Sumitomo Precision Prod Co Ltd 回転式基板処理装置
DE19854743A1 (de) * 1998-11-27 2000-06-08 Sez Semiconduct Equip Zubehoer Vorrichtung zum Naßätzen einer Kante einer Halbleiterscheibe
US6290865B1 (en) * 1998-11-30 2001-09-18 Applied Materials, Inc. Spin-rinse-drying process for electroplated semiconductor wafers
US6309520B1 (en) * 1998-12-07 2001-10-30 Semitool, Inc. Methods and apparatus for processing the surface of a microelectronic workpiece
WO2000040779A1 (en) * 1998-12-31 2000-07-13 Semitool, Inc. Method, chemistry, and apparatus for high deposition rate solder electroplating on a microelectronic workpiece
US6969682B2 (en) * 1999-01-22 2005-11-29 Semitool, Inc. Single workpiece processing system
US6548411B2 (en) * 1999-01-22 2003-04-15 Semitool, Inc. Apparatus and methods for processing a workpiece
US6492284B2 (en) * 1999-01-22 2002-12-10 Semitool, Inc. Reactor for processing a workpiece using sonic energy
US6806194B2 (en) * 1999-01-22 2004-10-19 Semitool. Inc. Apparatus and methods for processing a workpiece
US6680253B2 (en) * 1999-01-22 2004-01-20 Semitool, Inc. Apparatus for processing a workpiece
US6930046B2 (en) * 1999-01-22 2005-08-16 Semitool, Inc. Single workpiece processing system
US7217325B2 (en) * 1999-01-22 2007-05-15 Semitool, Inc. System for processing a workpiece
US6309981B1 (en) * 1999-10-01 2001-10-30 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
US6774056B2 (en) * 1999-11-10 2004-08-10 Semitool, Inc. Sonic immersion process system and methods
US8118044B2 (en) * 2004-03-12 2012-02-21 Applied Materials, Inc. Single workpiece processing chamber with tilting load/unload upper rim

Also Published As

Publication number Publication date
US6447633B1 (en) 2002-09-10
DE60045345D1 (de) 2011-01-20
JP5062934B2 (ja) 2012-10-31
US20020189652A1 (en) 2002-12-19
WO2001035454A1 (en) 2001-05-17
EP1234327A4 (de) 2006-06-14
US6692613B2 (en) 2004-02-17
US6794291B2 (en) 2004-09-21
US20050032391A1 (en) 2005-02-10
US20020185163A1 (en) 2002-12-12
EP1234327A1 (de) 2002-08-28
JP2003514379A (ja) 2003-04-15
US6423642B1 (en) 2002-07-23
EP1234327B1 (de) 2010-12-08

Similar Documents

Publication Publication Date Title
ATE491223T1 (de) Reaktor für die bearbeitung von halbleiterscheiben
DE3853397D1 (de) Verfahren zum schleierfreien Polieren von Halbleiterscheiben.
TW365550B (en) Method and apparatus for chemical processing semiconductor wafers
JPH05102056A (ja) ウエハー支持具
ATE381775T1 (de) Verfahren und vorrichtung zum handhaben von scheibenförmigen gegenständen, insbesondere silizium-wafer
ATA295887A (de) Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben
WO1999025904A8 (en) Electric potential shaping apparatus for holding a semiconductor wafer during electroplating
ATE233131T1 (de) System zum reinigen von halbleiterscheiben mit megasonischer wanderwelle
DE69707219D1 (de) Verfahren zum Herstellen von Silizium-Halbleiter Einzelsubstrat
TW200607038A (en) Contacts to semiconductor fin device and method for manufacturing the same
ID17230A (id) Metode memproses lapisan bawah
ATE501286T1 (de) Halterungssystem für behandlungsapparaturen
TW374943B (en) Apparatus of grinding process and the method
TW375551B (en) Polishing apparatus for semiconductor wafer
DE59201798D1 (de) Magazin zur Halterung von scheibenförmigen Werkstücken, insbesondere Halbleiterscheiben, bei der nasschemischen Oberflächenbehandlung in Flüssigkeitsbädern.
CA2347295A1 (en) Holding device for semiconductor wafers
WO2004047154A3 (en) Lifting glass substrate without center lift pins
TW200501257A (en) Process for the wet-chemical surface treatment of a semiconductor wafer
JPH06132387A (ja) 真空吸着ステージ
DE69013065D1 (de) Verfahren zum Polieren von Halbleiterplättchen.
US3166875A (en) Support for lapping transistor wafers or the like
TW340245B (en) Apparatus for manufacturing semiconductor device having stage for loading wafers the invention relates to an apparatus for manufacturing semiconductor device having stage for loading wafers
JP2015222754A (ja) 基板支持装置および該基板支持装置を備えた基板処理装置
JPH10277931A (ja) 硬質基板の製造方法およびその製造装置
JPS5599719A (en) Heat treatment jig of wafer

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification

Ref document number: 1234327

Country of ref document: EP