ATE342580T1 - Herstellungsverfahren von barriereschicht für kupfer-verbindungsstruktur - Google Patents

Herstellungsverfahren von barriereschicht für kupfer-verbindungsstruktur

Info

Publication number
ATE342580T1
ATE342580T1 AT00104085T AT00104085T ATE342580T1 AT E342580 T1 ATE342580 T1 AT E342580T1 AT 00104085 T AT00104085 T AT 00104085T AT 00104085 T AT00104085 T AT 00104085T AT E342580 T1 ATE342580 T1 AT E342580T1
Authority
AT
Austria
Prior art keywords
copper
barrier layer
barrier
layer
preclean
Prior art date
Application number
AT00104085T
Other languages
English (en)
Inventor
Dean J Denning
Daniel J Loop
Sam S Garcia
Gregory Norman Hamilton
Bradley P Smith
Md Rabiul Islam
Brian G Anthony
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Application granted granted Critical
Publication of ATE342580T1 publication Critical patent/ATE342580T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/66—Regeneration of the filtering material or filter elements inside the filter
    • B01D46/68—Regeneration of the filtering material or filter elements inside the filter by means acting on the cake side involving movement with regard to the filter elements
    • B01D46/681—Regeneration of the filtering material or filter elements inside the filter by means acting on the cake side involving movement with regard to the filter elements by scrapers, brushes or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/0002—Casings; Housings; Frame constructions
    • B01D46/0005—Mounting of filtering elements within casings, housings or frames
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
    • B01D46/10—Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces
    • B01D46/12—Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces in multiple arrangements
    • B01D46/121—V-type arrangements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76865—Selective removal of parts of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
AT00104085T 1999-03-02 2000-02-28 Herstellungsverfahren von barriereschicht für kupfer-verbindungsstruktur ATE342580T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/261,879 US6451181B1 (en) 1999-03-02 1999-03-02 Method of forming a semiconductor device barrier layer

Publications (1)

Publication Number Publication Date
ATE342580T1 true ATE342580T1 (de) 2006-11-15

Family

ID=22995276

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00104085T ATE342580T1 (de) 1999-03-02 2000-02-28 Herstellungsverfahren von barriereschicht für kupfer-verbindungsstruktur

Country Status (8)

Country Link
US (2) US6451181B1 (de)
EP (1) EP1033745B1 (de)
JP (1) JP4909454B2 (de)
KR (1) KR100761226B1 (de)
CN (1) CN1169199C (de)
AT (1) ATE342580T1 (de)
DE (1) DE60031191T2 (de)
TW (1) TW465016B (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045454B1 (en) * 1999-05-11 2006-05-16 Micron Technology, Inc. Chemical mechanical planarization of conductive material
US6458251B1 (en) * 1999-11-16 2002-10-01 Applied Materials, Inc. Pressure modulation method to obtain improved step coverage of seed layer
JP4419237B2 (ja) * 1999-12-22 2010-02-24 東京エレクトロン株式会社 成膜装置及び被処理体の処理方法
JP3676983B2 (ja) * 2000-03-29 2005-07-27 株式会社日立国際電気 半導体製造方法、基板処理方法、及び半導体製造装置
JP4856308B2 (ja) * 2000-12-27 2012-01-18 キヤノンアネルバ株式会社 基板処理装置及び経由チャンバー
JP2002203885A (ja) * 2000-12-27 2002-07-19 Anelva Corp インターバック型基板処理装置
US6566242B1 (en) * 2001-03-23 2003-05-20 International Business Machines Corporation Dual damascene copper interconnect to a damascene tungsten wiring level
KR100413481B1 (ko) * 2001-06-12 2003-12-31 주식회사 하이닉스반도체 반도체 소자의 구리 박막 증착 장비
WO2003008660A1 (en) 2001-07-19 2003-01-30 Trikon Holdings Limited Depositing a tantalum film
US6620727B2 (en) * 2001-08-23 2003-09-16 Texas Instruments Incorporated Aluminum hardmask for dielectric etch
US6908865B2 (en) * 2001-09-28 2005-06-21 Applied Materials, Inc. Method and apparatus for cleaning substrates
US6778258B2 (en) * 2001-10-19 2004-08-17 Asml Holding N.V. Wafer handling system for use in lithography patterning
US6656535B2 (en) * 2001-12-21 2003-12-02 Applied Materials, Inc Method of fabricating a coated process chamber component
KR100440261B1 (ko) * 2001-12-22 2004-07-15 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성 방법
US6989579B2 (en) * 2001-12-26 2006-01-24 Lucent Technologies Inc. Adhering layers to metals with dielectric adhesive layers
JP2003218201A (ja) * 2002-01-24 2003-07-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6664166B1 (en) * 2002-09-13 2003-12-16 Texas Instruments Incorporated Control of nichorme resistor temperature coefficient using RF plasma sputter etch
US20060226003A1 (en) * 2003-01-22 2006-10-12 John Mize Apparatus and methods for ionized deposition of a film or thin layer
US6926390B2 (en) 2003-02-05 2005-08-09 Hewlett-Packard Development Company, L.P. Method of forming mixed-phase compressive tantalum thin films using nitrogen residual gas, thin films and fluid ejection devices including same
US6893116B2 (en) 2003-04-29 2005-05-17 Hewlett-Packard Development Company, L.P. Fluid ejection device with compressive alpha-tantalum layer
US6955835B2 (en) * 2003-04-30 2005-10-18 Hewlett-Packard Development Company, L.P. Method for forming compressive alpha-tantalum on substrates and devices including the same
US7045455B2 (en) * 2003-10-23 2006-05-16 Chartered Semiconductor Manufacturing Ltd. Via electromigration improvement by changing the via bottom geometric profile
DE102004015865B4 (de) * 2004-03-31 2006-05-04 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Reinigen der Oberfläche eines Substrats
CN100345276C (zh) * 2004-05-19 2007-10-24 上海宏力半导体制造有限公司 降低铜双镶嵌工艺线间漏电流的方法
US7091088B1 (en) * 2004-06-03 2006-08-15 Spansion Llc UV-blocking etch stop layer for reducing UV-induced charging of charge storage layer in memory devices in BEOL processing
US20060014378A1 (en) * 2004-07-14 2006-01-19 Sanjeev Aggarwal System and method to form improved seed layer
US9659758B2 (en) 2005-03-22 2017-05-23 Honeywell International Inc. Coils utilized in vapor deposition applications and methods of production
US20060278520A1 (en) * 2005-06-13 2006-12-14 Lee Eal H Use of DC magnetron sputtering systems
US7348672B2 (en) * 2005-07-07 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnects with improved reliability
DE112007000697B4 (de) * 2006-03-22 2013-11-07 Mitsubishi Electric Corp. Leistungshalbleitervorrichtung
US20080078326A1 (en) * 2006-09-29 2008-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-cleaning tool and semiconductor processing apparatus using the same
US20080092806A1 (en) * 2006-10-19 2008-04-24 Applied Materials, Inc. Removing residues from substrate processing components
US8791018B2 (en) * 2006-12-19 2014-07-29 Spansion Llc Method of depositing copper using physical vapor deposition
US7723012B2 (en) * 2007-06-28 2010-05-25 Eastman Kodak Company Radiation-sensitive compositions and elements with solvent resistant poly(vinyl acetal)s
US8084862B2 (en) * 2007-09-20 2011-12-27 International Business Machines Corporation Interconnect structures with patternable low-k dielectrics and method of fabricating same
US8618663B2 (en) 2007-09-20 2013-12-31 International Business Machines Corporation Patternable dielectric film structure with improved lithography and method of fabricating same
US7709370B2 (en) * 2007-09-20 2010-05-04 International Business Machines Corporation Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures
JP2009194195A (ja) * 2008-02-15 2009-08-27 Panasonic Corp 半導体装置及びその製造方法
JP5590113B2 (ja) * 2010-03-02 2014-09-17 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
US20160208377A1 (en) * 2014-03-27 2016-07-21 Jx Nippon Mining & Metals Corporation Tantalum sputtering target and method for producing same
CN105990227B (zh) * 2015-02-27 2019-11-08 中芯国际集成电路制造(上海)有限公司 金属连线的制作方法及半导体器件
CN106158732B (zh) * 2015-04-16 2019-02-12 中芯国际集成电路制造(上海)有限公司 金属互连层的金属化工艺
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
CN111421426A (zh) * 2020-04-20 2020-07-17 台州市椒江南屯电子有限公司 一种金属导体电镀装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832229B2 (ja) 1978-09-22 1983-07-12 日本真空技術株式会社 金属窒化物を被覆した真空容器及び真空機器用部品
JPS59208071A (ja) 1983-05-13 1984-11-26 Hitachi Ltd 成膜方法および装置
JPS63303064A (ja) 1987-05-30 1988-12-09 Matsushita Electric Ind Co Ltd スパッタリング装置
JP2602276B2 (ja) * 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
US5175608A (en) 1987-06-30 1992-12-29 Hitachi, Ltd. Method of and apparatus for sputtering, and integrated circuit device
JPH06196437A (ja) * 1992-12-25 1994-07-15 Sumitomo Metal Ind Ltd チタンまたはチタン化合物の薄膜形成装置
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5707498A (en) * 1996-07-12 1998-01-13 Applied Materials, Inc. Avoiding contamination from induction coil in ionized sputtering
SG54602A1 (en) 1996-11-26 1998-11-16 Applied Materials Inc Coated deposition chamber equipment
JP3624628B2 (ja) 1997-05-20 2005-03-02 東京エレクトロン株式会社 成膜方法及び成膜装置
US6139699A (en) * 1997-05-27 2000-10-31 Applied Materials, Inc. Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
US6080285A (en) * 1998-09-14 2000-06-27 Applied Materials, Inc. Multiple step ionized metal plasma deposition process for conformal step coverage

Also Published As

Publication number Publication date
EP1033745A2 (de) 2000-09-06
EP1033745A3 (de) 2001-12-19
TW465016B (en) 2001-11-21
US6451181B1 (en) 2002-09-17
DE60031191T2 (de) 2007-08-23
KR100761226B1 (ko) 2007-09-28
DE60031191D1 (de) 2006-11-23
JP4909454B2 (ja) 2012-04-04
CN1266279A (zh) 2000-09-13
EP1033745B1 (de) 2006-10-11
CN1169199C (zh) 2004-09-29
US20020092763A1 (en) 2002-07-18
KR20000062671A (ko) 2000-10-25
JP2000323436A (ja) 2000-11-24

Similar Documents

Publication Publication Date Title
ATE342580T1 (de) Herstellungsverfahren von barriereschicht für kupfer-verbindungsstruktur
TW469585B (en) Copper interconnect seed layer treatment methods and apparatuses for treating the same
EP1091024A1 (de) Verfahren und vorrichtung zum beschichten von substraten
WO2004044954A3 (en) Gcib processing of integrated circuit interconnect structures
US20060283716A1 (en) Method of direct plating of copper on a ruthenium alloy
JP2003051481A5 (de)
CN1732561A (zh) 把金属和超低k值电介质集成
CA2721841A1 (fr) Composition d'electrodeposition et procede de revetement d'un substrat semi-conducteur utilisant ladite composition
US6743719B1 (en) Method for forming a conductive copper structure
US6730597B1 (en) Pre-ECD wet surface modification to improve wettability and reduced void defect
TW200535987A (en) Reverse-tone mask method for post-cmp elimination of copper overburden humps
US20060226014A1 (en) Method and process for improved uniformity of electrochemical plating films produced in semiconductor device processing
JP2002515645A (ja) 被加工片に１つ以上の金属化レベルを形成するのに使用するための方法及び製造ツール構造体
WO2002046489A1 (en) Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
US7256120B2 (en) Method to eliminate plating copper defect
US20040241985A1 (en) Substrate processing method and apparatus
US20060003486A1 (en) Plasma treatment method for electromigration reduction
US7226860B2 (en) Method and apparatus for fabricating metal layer
US20020158340A1 (en) Method for providing semiconductor device and corresponding semiconductor device
US20040131460A1 (en) Catch-pin water support for process chamber
KR20040008017A (ko) 반도체 소자의 구리 배선 형성방법
KR100359779B1 (ko) 반도체 장치의 금속배선 형성방법
KR100475534B1 (ko) 반도체 소자의 금속 배선 형성 방법
US6955935B2 (en) Method for chemical mechanical polishing for fabricating semiconductor device
TW410453B (en) Manufacturing process for multilevel plating Cu damascene wires

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties