WO2017193454A1 - Tft基板的断线修复方法 - Google Patents

Tft基板的断线修复方法 Download PDF

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Publication number
WO2017193454A1
WO2017193454A1 PCT/CN2016/086437 CN2016086437W WO2017193454A1 WO 2017193454 A1 WO2017193454 A1 WO 2017193454A1 CN 2016086437 W CN2016086437 W CN 2016086437W WO 2017193454 A1 WO2017193454 A1 WO 2017193454A1
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Prior art keywords
layer
tft substrate
repairing
disconnection
metal
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French (fr)
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赵赫
谢克成
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to JP2018555471A priority Critical patent/JP6734396B2/ja
Priority to KR1020187035777A priority patent/KR102120578B1/ko
Priority to US15/117,453 priority patent/US10101601B2/en
Publication of WO2017193454A1 publication Critical patent/WO2017193454A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P58/00—Singulating wafers or substrates into multiple chips, i.e. dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/067—Manufacture or treatment of conductive parts of the interconnections by modifying the pattern of conductive parts

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular, to a method for repairing a disconnection of a TFT substrate.
  • Liquid crystal display is one of the most widely used flat panel displays.
  • the liquid crystal panel is a core component of liquid crystal displays.
  • a conventional liquid crystal panel usually consists of a color filter (CF) substrate, a thin film transistor array substrate (TFT Array Substrate), and a liquid crystal layer (Liquid Crystal Layer) disposed between the two substrates.
  • the working principle is that liquid crystal molecules are placed in two parallel glass substrates, and there are many vertical and horizontal small wires between the two glass substrates, and the liquid crystal molecules are controlled to change direction by energization or not, and the backlight module is The light is refracted to produce a picture.
  • the thin film transistor array substrate is provided with a thin film transistor (TFT) array for driving the rotation of the liquid crystal to control the display of each pixel, and the color filter substrate is provided with a color filter layer for forming each pixel. color.
  • the color filter layer is composed of red color resistance (Red), green color resistance (Green), and blue color resistance (Blue).
  • the disconnection of the TFT substrate refers to a phenomenon in which a driving line or a signal line in the liquid crystal display panel is broken due to a process defect of the TFT substrate, so that some pixels are always in a bright state when the liquid crystal display is displayed. Since the wire breakage is caused by the process defect of the TFT substrate, it is also impossible to reduce the wire breakage ratio to 0 by improving the manufacturing process, which is an unavoidable defect in the liquid crystal display. A liquid crystal display having a broken line has a poor taste. If a disconnection is found during shipment, the liquid crystal display needs to be disposed of, thereby increasing the cost of production. In order to reduce the amount of scrap and reduce the production cost, the prior art will perform the disconnection detection on the TFT substrate after the process of the TFT substrate is completed, and repair the detected disconnection.
  • FIG. 1 and FIG. 2 are schematic diagrams showing the structure of a TFT substrate repaired by a conventional TFT disconnection repair method and a cross-sectional view of a repaired position.
  • the TFT disconnection repair method is at a breakpoint 21 of the broken line 20'.
  • a repair structure is disposed on the adjacent sub-pixel region, and the partial color resist layer 600' on the passivation layer 500' on the sub-pixel region adjacent to the break point 21' is first removed to form a connectable breakpoint.
  • An object of the present invention is to provide a method for repairing a broken wire of a TFT substrate, which can improve the adhesion effect and uniformity of the metal long film, reduce the risk of wire breakage and peeling of the metal long film, and improve the success rate of wire break repair of the TFT substrate, and ensure the success rate of the wire substrate repair.
  • Product quality and enhance product competitiveness can improve the adhesion effect and uniformity of the metal long film, reduce the risk of wire breakage and peeling of the metal long film, and improve the success rate of wire break repair of the TFT substrate, and ensure the success rate of the wire substrate repair.
  • the present invention provides a method for repairing a disconnection of a TFT substrate, comprising the following steps:
  • Step 1 Providing a TFT substrate
  • the TFT substrate includes: a base substrate, a first metal layer patterned on the base substrate, an insulating layer covering the base substrate and the first metal layer, and disposed on the insulating layer a patterned second metal layer, a passivation layer overlying the insulating layer and the second metal layer;
  • Step 2 finding a disconnection in the TFT substrate and a position of a breakpoint on the broken line;
  • Step 3 processing, respectively, at a position where the passivation layer intersects the broken line at both ends of the break point to expose a metal layer where the broken line is located;
  • Step 4 covering the transition layer of the metal layer exposed on both ends of the passivation layer and the break point;
  • Step 5 Form a long metal film on the transition material layer to connect the broken wires at both ends of the break point.
  • the material of the transition material layer in the step 4 is chromium, cadmium, or tin.
  • the step 2 includes: inserting the TFT substrate into an array test station for detecting, finding a broken line in the TFT substrate and a position coordinate of the break point on the broken line, and recording coordinates of the break point.
  • the step 3 specifically includes: transferring the TFT substrate to a repairing machine, and the repairing machine finds a corresponding breakpoint according to the coordinates of the breakpoint; and then, in the passivation layer and the laser The locations at the ends of the breakpoint where the broken lines intersect are processed to expose the metal layer.
  • the material of the transition material layer in the step 4 is a resin acid material.
  • the material of the transition material layer in the step 4 is C 19 H 29 COOH, and the transition material layer is continuously vaporized with the formation of the metal long film.
  • the step 4 specifically includes: transferring the TFT substrate to a transition material site to form the transition material layer on the passivation layer and the metal layer.
  • the TFT substrate further includes a color resist layer disposed on the passivation layer:
  • step 3 a part of the color resist layer in the region adjacent to the break point is removed, and a color resist groove capable of connecting the two ends of the break point on the break line is formed, and the color resist groove is exposed at the color resist.
  • the passivation layer under the layer processing at a position where the passivation layer intersects the broken line at both ends of the break point to expose a metal layer where the broken line is located;
  • the method for repairing the disconnection of the TFT substrate further includes the step of performing a darkening process on the sub-pixel region having the color resist recess.
  • the passivation layer inside the color resist recess and the metal layer exposed at both ends of the break point are covered with a transition material layer.
  • Step 61 cutting a storage capacitor electrode line that is spatially staggered with the metal long film, and connecting a source between the source and the data line of the sub-pixel region that needs dark spot or a connection between the drain and the pixel electrode. Cut off
  • Step 62 Fusing the pixel electrode of the sub-pixel region that needs to be darkened and the storage capacitor electrode line.
  • the invention also provides a method for repairing a disconnection of a TFT substrate, comprising the following steps:
  • Step 1 Providing a TFT substrate
  • the TFT substrate includes: a base substrate, a first metal layer patterned on the base substrate, an insulating layer covering the base substrate and the first metal layer, and disposed on the insulating layer a patterned second metal layer, a passivation layer overlying the insulating layer and the second metal layer;
  • Step 2 finding a disconnection in the TFT substrate and a position of a breakpoint on the broken line;
  • Step 3 processing, respectively, at a position where the passivation layer intersects the broken line at both ends of the break point to expose a metal layer where the broken line is located;
  • Step 4 covering the transition layer of the metal layer exposed on both ends of the passivation layer and the break point;
  • Step 5 forming a long metal film on the transition material layer to connect the broken wires at both ends of the break point;
  • the step 2 specifically includes: placing the TFT substrate into an array test station for detecting, finding a broken line in the TFT substrate and a position coordinate of the break point on the broken line, and recording coordinates of the break point. ;
  • the step 3 specifically includes: transmitting the TFT substrate to a repairing machine, The repairing machine finds a corresponding breakpoint according to the coordinates of the breakpoint; then, by laser spotting, the passivation layer is processed at a position intersecting the broken line at both ends of the breakpoint to expose the metal Floor.
  • the present invention provides a method for repairing a disconnection of a TFT substrate, which first finds a broken line in the TFT substrate and a position of a breakpoint on the broken line, and is located at the passivation layer Positions at which the broken lines at the two ends of the break point intersect are respectively processed to expose the metal layer where the broken line is located, and then the transition material layer is covered on the exposed metal layer at both ends of the passivation layer and the break point Finally, a metal long film is formed on the transition material layer to connect the broken wires at both ends of the break point, and the repair effect can be solved by the residual layer of the color resist layer or the wrinkles of the passivation layer.
  • the good problem is to improve the adhesion effect and uniformity of the long metal film on the passivation layer, reduce the risk of wire breakage and peeling of the metal long film, and improve the success rate of wire break repair of the TFT substrate.
  • FIG. 1 is a schematic structural view of a TFT substrate repaired by a wire break repair method of a conventional TFT substrate
  • Figure 2 is a cross-sectional view corresponding to A-A' in Figure 1;
  • FIG. 3 is a flow chart of repairing a broken line in a display area of a TFT substrate by applying a wire break repairing method of the TFT substrate of the present invention
  • FIG 4 is a schematic view of step 1 in the flow chart shown in Figure 3;
  • Figure 5 is a cross-sectional view corresponding to the line B-B' in Figure 4;
  • Figure 6 is a schematic view of step 3 in the flow chart shown in Figure 3;
  • Figure 7 is a cross-sectional view corresponding to the line B-B' in Figure 6;
  • Figure 8 is a schematic view of step 4 in the flow chart shown in Figure 3;
  • Figure 9 is a cross-sectional view corresponding to the line B-B' in Figure 8.
  • Figure 10 is a schematic view of step 5 in the flow chart shown in Figure 3;
  • Figure 11 is a cross-sectional view showing the line B-B' in Figure 10 when the material of the transition material layer is a metal material;
  • Figure 12 is a cross-sectional view showing the line B-B' in Figure 10 when the material of the transition material layer is a resin acid material;
  • Figure 13 is a schematic view of step 6 in the flow chart shown in Figure 3;
  • Fig. 14 is a flow chart showing a method of repairing a disconnection of a TFT substrate of the present invention.
  • the present invention provides a method for repairing a disconnection of a TFT substrate.
  • the method is used to repair a broken line in a display area of a TFT substrate, the following steps are included:
  • Step 1 Referring to FIG. 4 and FIG. 5, a TFT substrate 1 for TFT disconnection repair is provided.
  • the TFT substrate 1 includes a base substrate 100, a patterned first metal layer 200 disposed on the base substrate 100, and overlying the base substrate 100 and the first metal layer 200. a gate insulating layer 300, a patterned second metal layer 400 disposed on the gate insulating layer 300, a passivation layer 500 overlying the gate insulating layer 300 and the second metal layer 400, and a setting a color resist layer 600 on the passivation layer 500;
  • the first metal layer 200 includes a plurality of parallel spaced drive lines 210.
  • the second metal layer 400 includes a plurality of parallel spaced data lines 410.
  • the drive lines 210 and the data lines 410 are vertically interleaved. A number of sub-pixel regions arranged in an array.
  • the first metal layer 200 in the step 1 further includes: a storage capacitor electrode line (CST Line) 220 covering each sub-pixel region, and a plurality of gate electrodes formed corresponding to the sub-pixel regions arranged in the respective arrays (not The plurality of gates are respectively electrically connected to the driving lines 210 corresponding to the sub-pixel regions in which they are located;
  • the insulating layer 300 includes a gate insulating layer and an interlayer insulating layer stacked in a plurality, A plurality of semiconductor layers 310 are formed between the gate insulating layer and the interlayer insulating layer above the gate;
  • the second metal layer 400 in the step 1 further includes: a plurality of sub-pixel regions respectively corresponding to the respective arrays a source 420 and a drain 430, wherein the plurality of source 420 and the drain 430 are respectively in contact with two ends of the corresponding semiconductor layer 310, and the plurality of source 420 respectively have data lines corresponding to the sub-pixel region in which they are located
  • the gate, the semiconductor layer 310, the source 420, and the drain 430 collectively form a switching TFT of each sub-pixel region to control writing of data signals.
  • the source electrode 420 and the drain electrode 430 are in contact with the semiconductor layer 310 through via holes formed on the interlayer insulating layer, and the pixel electrode is formed on the color resist layer 600 and the passivation layer 500.
  • the hole is in contact with the drain 430, and the pixel electrode is insulated from the storage capacitor electrode line 220 to form a storage capacitor.
  • the material of the insulating layer 300 and the passivation layer 500 is silicon oxide, silicon nitride, or both.
  • the combination of the first metal layer 200 and the second metal layer 400 is aluminum or copper.
  • the color resist layer 600 includes color resists of a plurality of different colors.
  • the color resist layer 600 in the step 1 includes a red color resist R, a green color resist G, and a blue color resist B which are alternately arranged in this order.
  • the color resist layer 600 may further include color resists of various colors such as white color resistance and yellow color resistance as needed.
  • Step 2 The TFT substrate 1 is placed in an array test station for detection, and the position coordinates of the broken line 20 in the TFT substrate 1 and the break point 21 on the broken line 20 are found, and the coordinates of the break point 21 are recorded. .
  • the coordinates of the breakpoint 21 are recorded in the corresponding repair system, so that each device can acquire the coordinates from the repair system and find the position of the breakpoint 21 in time.
  • the disconnection 20 may be the drive line 210 or the data line 410.
  • Step 3 The TFT substrate 1 is transferred to a repairing machine, and the repairing machine finds a corresponding breakpoint 21 according to the coordinates of the breakpoint 21, and removes a sub-pixel region adjacent to the breakpoint 21 by using a laser.
  • the partial color resist layer 600 forms a color resist groove 610 capable of connecting the ends of the break point 21 on the broken line 20, and then laser spotting at the positions of the break ends 21 on the broken line 20 to expose the metal layers at both ends of the break point 21.
  • FIG. 6 removes a portion of the color resist layer 600 in a sub-pixel region on the right side of the break point 21, and may also adopt a scheme of removing a portion of the color resist layer 600 in a sub-pixel region on the left side of the breakpoint 21 as needed. .
  • Step 4 referring to FIG. 8 and FIG. 9, the TFT substrate 1 is transferred to a transition material site, and a transition is formed on the exposed metal layer of the passivation layer 500 and the break point 21 inside the color resist recess 610. Material layer 700.
  • the material of the transition material 700 layer may be a metal having strong adhesion, preferably chromium, cadmium, or tin.
  • the material of the transition material 700 layer may also be a resin acid material, preferably C 19 H 29 COOH.
  • Step 5 The TFT substrate 1 is transferred to a laser CVD apparatus, and a metal long film 800 is formed on the transition material layer 700 by a laser CVD process.
  • the transition material layer 700 is a metal having strong adhesion
  • the metal long film 800 connects the two ends of the break point 21 through the transition material layer 700 and the laser holes at both ends of the break point 21 , so that The broken line 20 is connected, and the signal is normally transmitted, and the repair of the broken line 20 is completed.
  • the transition material layer 700 can be firmly bonded to the passivation layer 500 and the metal long film 800, thereby improving The adhesion effect of the metal layer long film 800 on the passivation layer 500 can effectively prevent the metal long film 800 from falling off; at the same time, the transition material layer 700 can fill the passivation layer wrinkles caused by the excessive color resistance energy of the repairing machine.
  • the residual color resistance caused by the color resistance energy is too small, so that the adhesion plane of the metal long film 800 is flat, the uniformity of the metal long film 800 can be improved, the metal long film 800 is prevented from being locally too fine, and disconnection occurs, and the disconnection of the TFT substrate is improved. Repair success rate.
  • the transition material layer 700 is a resin acid
  • heat is released to vaporize the resin acid, and the transition material layer 700 disappears.
  • the metal long film 800 connects the two ends of the break point 21 through the laser holes at both ends of the break point 21, so that the broken line 20 is connected, and the signal is normally transmitted, and the repair of the broken line 20 is completed.
  • the resin acid is heated and vaporized, in the process of fabricating the metal long film 800, the molten metal forming the metal long film 800 is continuously deposited and leveled during the gasification of the resin acid, so that the metal long film is formed.
  • the metal molecules in the 800 can be more closely connected, and the adhesion effect and uniformity of the metal long film 800 on the passivation layer 500 can be improved, and the success rate of the disconnection repair of the TFT substrate can be improved.
  • Step 6 Perform darkening processing on the sub-pixel region having the color resist recess 610 to complete the disconnection repair of the TFT substrate.
  • the step 6 specifically includes:
  • Step 61 First, the storage capacitor electrode line 220 that is spatially staggered with the metal long film 800 is cut off to prevent the metal long film 800 from being short-circuited with the storage capacitor electrode line 220.
  • connection between the source 420 of the sub-pixel region that needs to be darkened and the data line 410 or the connection between the drain 420 and the pixel electrode is cut off.
  • Step 62 The pixel electrode of the sub-pixel region that needs to be darkened is welded to the storage capacitor electrode line 220 such that the sub-pixel region is darkened.
  • the TFT substrate 1 is re-examined, and it is confirmed that the repair is successful and the shipment can be performed.
  • the processing method here includes conventional physical or chemical means to remove other structures above the passivation layer (corresponding to the color resist layer of the display region in the foregoing embodiment) ) to expose a passivation layer above the breakpoint of the wire to be repaired, where the passivation layer may also be referred to as an insulating layer;
  • the passivation layer is processed by laser striking to expose the metal layer where the broken line is located at a position where the broken line to be repaired at both ends of the break point intersects the passivation layer;
  • transition metal layer 700 and the metal long film 800 are sequentially covered on the metal layer exposed at both ends of the passivation layer and the break point, so that the two breaks of the break point to be repaired pass through the transition material layer 700 and the metal long film 800.
  • the material of the transition material layer here is the same as the foregoing embodiment, and will not be described again here.
  • the method for repairing a disconnection of a TFT substrate first finds a broken line in the TFT substrate and a position of a breakpoint on the broken line, and then in the passivation layer and the location The positions at which the broken lines intersect at the two ends of the break point are respectively processed to expose the metal layer where the broken line is located, and then the transition material layer is covered on the metal layer exposed at both ends of the passivation layer and the break point. Finally, a metal long film is formed on the transition material layer to connect the broken wires at both ends of the break point, and the setting of the transition material layer can solve the poor repair effect caused by the residual of the color resist layer or the fold of the passivation layer.
  • the problem is to improve the adhesion effect and uniformity of the metal long film on the passivation layer, reduce the risk of wire breakage and peeling of the metal long film, and improve the success rate of the wire break repair of the TFT substrate.

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Abstract

一种TFT基板（1）的断线（20）修复方法，该方法首先找出TFT基板（1）中的断线（20）及该断线（20）上断点（21）的位置，再在钝化层（500）与位于所述断点（21）两端的所述断线（20）相交的位置分别进行加工以暴露出所述断线（20）所处的金属层，然后在所述钝化层（500）及断点（21）两端暴露的金属层上覆盖过渡材料层（700），最后在过渡材料层（700）上形成金属长膜（800），以使断点（21）两端的所述断线（20）连通，通过过渡材料层（700）的设置能够解决因色阻层（600）残留或钝化层（500）褶皱造成修复效果不佳的问题，提升金属长膜（800）在钝化层（500）上的附着效果及均匀程度，降低金属长膜（800）的断线与剥落风险，提升TFT基板（1）的断线（20）修复成功率。

Description

TFT基板的断线修复方法 技术领域
本发明涉及液晶显示技术领域，尤其涉及一种TFT基板的断线修复方法。
背景技术
液晶显示器(Liquid Crystal Display，LCD)是目前最广泛使用的平板显示器之一，液晶面板是液晶显示器的核心组成部分。
传统的液晶面板通常是由一彩色滤光片(Color Filter，CF)基板、一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)以及一配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。其中薄膜晶体管阵列基板上制备有薄膜晶体管(TFT)阵列，用于驱动液晶的旋转，控制每个像素的显示，而彩色滤光片基板上设有彩色滤光层，用于形成每个像素的色彩。彩色滤光层由红色色阻(Red)、绿色色阻(Green)、及蓝色色阻(Blue)交替排列组成。
TFT基板的断线是指由于TFT基板的制程缺陷导致液晶显示面板中的驱动线或信号线发生断点，使液晶显示器进行显示时某些像素点始终呈亮态的现象。由于断线是由TFT基板的制程缺陷产生的，通过改进生产制程也始终不能将断线比例降低为0，是液晶显示器中不可避免的不良。具有断线的液晶显示器的品味差，若出货过程中发现断线，该液晶显示器需要进行报废处理，使生产的成本提升。为了减少报废量，降低生产成本，现有技术会在TFT基板的制程完成后对TFT基板进行断线检测，并对检查出的断线加以修复。
请参阅图1及图2，为一种现有的TFT断线修复方法修复后的TFT基板的结构示意图及修复位置的剖视示意图，该TFT断线修复方法在断线20’的断点21’相邻的子像素区域上设置修复结构，首先将与断点21’相邻的子像素区域上位于钝化层500’上的部分色阻层600’去除(Remove)，形成能够连通断点21’两端的色阻凹槽610’，接着在断点21’两端进行激光打点(laser welding)，将断线20’中位于断点21’两端上的钝化层500’、或钝化 层500’及绝缘层300’去除，之后利用激光化学气相沉积法(Laser CVD)在色阻凹槽610’中形成金属长膜700’将断线20’导通，然后在色阻凹槽610’所在的子像素区域做暗点，完成TFT断线的修复。这种断线的修复方法在进行色阻去除时，若去除色阻的能量过小，会导致钝化层500’上留有色阻残留，若去除色阻的能量过大，会在钝化层500’上形成褶皱，最终会使金属长膜700’局部过细及金属长膜700’与钝化层500’的附着效果差，容易造成金属长膜700’的断线与剥落(Peeling)风险，降低TFT断线的修复成功率。
发明内容
本发明的目的在于提供一种TFT基板的断线修复方法，能够提升金属长膜的附着效果及均匀程度，降低金属长膜的断线与剥落风险，提升TFT基板的断线修复成功率，保证产品质量，提升产品竞争力。
为实现上述目的，本发明提供一种TFT基板的断线修复方法，包括以下步骤：
步骤1、提供一TFT基板；
所述TFT基板包括：衬底基板、设置于所述衬底基板上图案化的第一金属层、覆盖在所述衬底基板及第一金属层上的绝缘层、设置在所述绝缘层上的图案化的第二金属层、覆盖在所述绝缘层及第二金属层上的钝化层；
步骤2、找出所述TFT基板中的断线及该断线上断点的位置；
步骤3、在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层；
步骤4、在所述钝化层及断点两端暴露的金属层上覆盖过渡材料层；
步骤5、在所述过渡材料层上形成金属长膜，以使所述断点两端的所述断线连通。
所述步骤4中过渡材料层的材料为铬、镉、或锡。
所述步骤2具体包括：将所述TFT基板放入阵列测试站点进行检测，找出所述TFT基板中的断线及该断线上断点的位置坐标，并记录该断点的坐标。
所述步骤3具体包括：将所述TFT基板传送至修补机台，所述修补机台根据断点的坐标查找到相应的断点；然后，通过激光打点的方式在所述钝化层与位于所述断点两端的所述断线相交的位置加工以暴露出所述金属层。
所述步骤4中过渡材料层的材料为树脂酸材料。
所述步骤4中过渡材料层的材料为C19H29COOH，所述过渡材料层随着金属长膜的形成不断气化。
所述步骤4具体包括：将所述TFT基板传送至过渡材料站点以在所述钝化层和金属层上形成所述过渡材料层。
所述TFT基板还包括设置在所述钝化层上的色阻层：
在所述步骤3中，去除与该断点相邻区域内的部分色阻层，形成能够连通断线上断点两端的色阻凹槽，所述色阻凹槽暴露出位于所述色阻层下方的所述钝化层；在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层；
所述TFT基板的断线修复方法还包括步骤6、对具有所述色阻凹槽的子像素区域进行暗点化处理。
在所述步骤4中，在所述色阻凹槽内部的钝化层及断点两端暴露的金属层上覆盖过渡材料层。
所述步骤6中暗点化处理的具体步骤为：
步骤61、将与所述金属长膜在空间上交错的存储电容电极线切断，将需要暗点化的子像素区域的源极与数据线之间的连接或者漏极与像素电极之间的连接切断；
步骤62、将需要暗点化的子像素区域的像素电极与存储电容电极线熔接到一起。
本发明还提供一种TFT基板的断线修复方法，包括以下步骤：
步骤1、提供一TFT基板；
所述TFT基板包括：衬底基板、设置于所述衬底基板上图案化的第一金属层、覆盖在所述衬底基板及第一金属层上的绝缘层、设置在所述绝缘层上的图案化的第二金属层、覆盖在所述绝缘层及第二金属层上的钝化层；
步骤2、找出所述TFT基板中的断线及该断线上断点的位置；
步骤3、在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层；
步骤4、在所述钝化层及断点两端暴露的金属层上覆盖过渡材料层；
步骤5、在所述过渡材料层上形成金属长膜，以使所述断点两端的所述断线连通；
其中，所述步骤2具体包括：将所述TFT基板放入阵列测试站点进行检测，找出所述TFT基板中的断线及该断线上断点的位置坐标，并记录该断点的坐标；
其中，所述步骤3具体包括：将所述TFT基板传送至修补机台，所述 修补机台根据断点的坐标查找到相应的断点；然后，通过激光打点的方式在所述钝化层与位于所述断点两端的所述断线相交的位置加工以暴露出所述金属层。
本发明的有益效果：本发明提供的TFT基板的断线修复方法，该方法首先找出所述TFT基板中的断线及该断线上断点的位置，再在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层，然后在所述钝化层及断点两端暴露的金属层上覆盖过渡材料层，最后在所述过渡材料层上形成金属长膜，以使所述断点两端的所述断线连通，通过过渡材料层的设置能够解决因色阻层残留或钝化层褶皱造成修复效果不佳的问题，提升金属长膜在钝化层上的附着效果及均匀程度，降低金属长膜的断线与剥落风险，提升TFT基板的断线修复成功率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为采用现有的TFT基板的断线修复方法修复后的TFT基板的结构示意图；
图2为对应图1中A-A’处的剖视示意图；
图3为应用本发明的TFT基板的断线修复方法修复TFT基板显示区内断线时的流程图；
图4为图3所示流程图中步骤1的示意图；
图5为对应图4中B-B’线处的剖视示意图；
图6为图3所示流程图中步骤3的示意图；
图7为对应图6中B-B’线处的剖视示意图；
图8为图3所示流程图中步骤4的示意图；
图9为对应图8中B-B’线处的剖视示意图；
图10为图3所示流程图中步骤5的示意图；
图11为当过渡材料层的材料为金属材料时图10中B-B’线处的剖视示意图；
图12为当过渡材料层的材料为树脂酸材料时图10中B-B’线处的剖视示意图；
图13为图3所示流程图中步骤6的示意图；
图14为本发明的TFT基板的断线修复方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图14，并结合图3，本发明提供一种TFT基板的断线修复方法，应用该方法修复TFT基板的显示区内断线时，包括以下步骤：
步骤1、请参阅图4及图5，提供一待TFT断线修复的TFT基板1。
具体地，所述TFT基板1包括：衬底基板100、设置于所述衬底基板100上的图案化的第一金属层200、覆盖在所述衬底基板100及第一金属层200上的栅极绝缘层300、设置在所述栅极绝缘层300上的图案化的第二金属层400、覆盖在所述栅极绝缘层300及第二金属层400上的钝化层500、及设置在所述钝化层500上的色阻层600；
所述第一金属层200包括若干平行间隔排布的驱动线210，所述第二金属层400包括若干平行间隔排布的数据线410，所述驱动线210与数据线410在空间垂直交错形成若干阵列排布的子像素区域。
进一步地，所述步骤1中第一金属层200还包括：覆盖各个子像素区域的存储电容电极线(CST Line)220、以及分别对应各个阵列排布的子像素区域形成多个栅极(未图示)，所述多个栅极分别与其所在的子像素区域对应的驱动线210电性连接；所述绝缘层300包括层叠设置的栅极绝缘层及层间绝缘层，在所述多个栅极上方的栅极绝缘层与层间绝缘层之间形成有多个半导体层310；所述步骤1中第二金属层400还包括：分别对应各个阵列排布的子像素区域形成的多个源极420和漏极430，所述多个源极420和漏极430分别与对应的半导体层310的两端相接触，所述多个源极420分别与其所在的子像素区域对应的数据线410电性连接；所述TFT基板1还包括设于所述色阻层600上分别对应各个子像素区域形成的多个像素电极(未图示)，所述多个像素电极分别与其所在的子像素区域对应的漏极430电性连接。
需要说明的是，所述栅极、半导体层310、源极420、漏极430共同形成各个子像素区域的开关TFT，以控制数据信号的写入。所述源极420、漏极430通过形成于所述层间绝缘层上过孔与所述半导体层310接触，所述像素电极通过形成于所述色阻层600和钝化层500上的过孔与所述漏极430接触，所述像素电极与所述存储电容电极线220绝缘交叠形成存储电容。优选地，所述绝缘层300和钝化层500的材料为氧化硅、氮化硅、或二者 的组合，所述第一金属层200和第二金属层400的材料为铝、或铜。
具体地，所述色阻层600包括多种不同颜色的色阻，优选地，所述步骤1中色阻层600包括依次交替排列的红色色阻R、绿色色阻G、及蓝色色阻B，当然根据需要所述色阻层600还可以进一步包括白色色阻、黄色色阻等各种颜色的色阻。
步骤2、将所述TFT基板1放入阵列测试站点进行检测，找出所述TFT基板1中的断线20及该断线20上断点21的位置坐标，并记录该断点21的坐标。
具体地，所述断点21的坐标记录于相应的修复系统中，从而使得各个设备可以从修复系统中获取该坐标，及时找到断点21的位置。
具体地，该断线20可以为驱动线210，也可以为数据线410。
步骤3、将所述TFT基板1传送至修补机台，修补机台根据断点21的坐标查找到相应的断点21，并利用激光去除与该断点21相邻的一子像素区域内的部分色阻层600，形成能够连通断线20上断点21两端的色阻凹槽610，再在断线20上断点21两端的位置进行激光打点，暴露出断点21两端的金属层。
请参阅图6及图7，当断线20为数据线410时，激光打点时需要去除断点21两端的钝化层500，当断线20为驱动线210时，激光打点需要去除断点21两端的钝化层500及绝缘层300。此外，图6中去除的是断点21右侧一子像素区域内的部分色阻层600，根据需要还可以采用去除断点21左侧的一子像素区域内的部分色阻层600的方案。
步骤4、请参阅图8及图9，将所述TFT基板1传送至过渡材料站点，在所述色阻凹槽610内部的钝化层500及断点21两端暴露的金属层上覆盖过渡材料层700。
具体地，所述过渡材料700层的材料可以为有强粘附力的金属，优选铬、镉、或锡。所述过渡材料700层的材料还可以为树脂酸材料，优选C19H29COOH。
步骤5、将所述TFT基板1传送至激光CVD设备，利用激光CVD工艺在所述过渡材料层700上形成金属长膜800。
具体地，请参阅图10及图11，过渡材料层700为有强粘附力的金属，金属长膜800通过过渡材料层700及断点21两端的激光孔将断点21两端连接，使断线20连通，正常传输信号，完成对断线20的修复。
需要说明的是，由于铬、镉、或锡与金属和非金属均具有较强的粘附力，使过渡材料层700能够与钝化层500、及金属长膜800牢固粘合，提升 金属层长膜800在钝化层500上的附着效果，能够有效防止金属长膜800的脱落；同时过渡材料层700能够填补由于修补机台去色阻能量过大导致的钝化层褶皱及去色阻能量过小导致的色阻残留，使得金属长膜800的附着平面平坦，能够提升金属长膜800的均匀度，防止金属长膜800出现局部过细而产生断线，提升TFT基板的断线修复成功率。
具体地，请参阅图10及图12，过渡材料层700为树脂酸，金属长膜800在进行制作的过程中，会放出热量使树脂酸气化，使过渡材料层700消失，在金属长膜800制作完成后，金属长膜800通过断点21两端的激光孔将断点21两端连接，使断线20连通，正常传输信号，完成对断线20的修复。
需要说明的是，由于树脂酸会受热气化，在金属长膜800的制作过程中，形成金属长膜800的熔融的金属在树脂酸的气化过程中不断沉积、流平，使得金属长膜800内的金属分子之间能够更加紧密，可提升金属长膜800在钝化层500上的附着效果与均匀性，提升TFT基板的断线修复成功率。
步骤6、对具有色阻凹槽610的子像素区域进行暗点化处理，完成TFT基板的断线修复。
具体地，请参阅图13，所述步骤6具体包括：
步骤61、先将与所述金属长膜800在空间上交错的存储电容电极线220切断，防止金属长膜800与存储电容电极线220短路。
再将需要暗点化的子像素区域的源极420与数据线410之间的连接或者漏极420与像素电极之间的连接切断。
步骤62、将需要暗点化的子像素区域的像素电极与存储电容电极线220熔接到一起，使得该子像素区域呈暗点化状态。
具体地，所述断线20修复完成后再对TFT基板1进行复检，确认修复成功即可出货。
可以理解的是，本发明所提出的增设过渡材料层的修复方式也适用于非显示区等其他类似位置：
首先，通过加工裸露出待修复金属线上方的钝化层区域，这里的加工方式包括常规的物理或化学方式以移除钝化层上方的其他结构(对应前述实施例中显示区的色阻层)，以裸露出待修复金属线断点附近上方的钝化层，此处钝化层也可称作绝缘层；
然后，通过激光打点的方式加工钝化层，以在断点两端的待修复断线与钝化层相交的位置暴露出该断线所处的金属层；
最后，依次在该钝化层及断点两端暴露出的金属层上覆盖过渡材料层700和金属长膜800，使断点两段的待修复断线通过过渡材料层700和金属长膜800恢复导通。这里过渡材料层的材料与前述实施例相同，这里不再赘述。
值得说明的是，本发明应用于非显示区断线修复的其他具体细节属于本领域现有技术，也不再一一说明。
综上所述，本发明提供的TFT基板的断线修复方法，该方法首先找出所述TFT基板中的断线及该断线上断点的位置，再在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层，然后在所述钝化层及断点两端暴露的金属层上覆盖过渡材料层，最后在所述过渡材料层上形成金属长膜，以使所述断点两端的所述断线连通，通过过渡材料层的设置能够解决因色阻层残留或钝化层褶皱造成修复效果不佳的问题，提升金属长膜在钝化层上的附着效果及均匀程度，降低金属长膜的断线与剥落风险，提升TFT基板的断线修复成功率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (18)

  1. 一种TFT基板的断线修复方法，包括以下步骤：
    步骤1、提供一TFT基板；
    所述TFT基板包括：衬底基板、设置于所述衬底基板上图案化的第一金属层、覆盖在所述衬底基板及第一金属层上的绝缘层、设置在所述绝缘层上的图案化的第二金属层、覆盖在所述绝缘层及第二金属层上的钝化层；
    步骤2、找出所述TFT基板中的断线及该断线上断点的位置；
    步骤3、在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层；
    步骤4、在所述钝化层及断点两端暴露的金属层上覆盖过渡材料层；
    步骤5、在所述过渡材料层上形成金属长膜，以使所述断点两端的所述断线连通。
  2. 如权利要求1所述的TFT基板的断线修复方法，其中，所述步骤4中过渡材料层的材料为铬、镉、或锡。
  3. 如权利要求1所述的TFT基板的断线修复方法，其中，所述步骤2具体包括：将所述TFT基板放入阵列测试站点进行检测，找出所述TFT基板中的断线及该断线上断点的位置坐标，并记录该断点的坐标。
  4. 如权利要求3所述的TFT基板的断线修复方法，其中，所述步骤3具体包括：将所述TFT基板传送至修补机台，所述修补机台根据断点的坐标查找到相应的断点；然后，通过激光打点的方式在所述钝化层与位于所述断点两端的所述断线相交的位置加工以暴露出所述金属层。
  5. 如权利要求1所述的TFT基板的断线修复方法，其中，所述步骤4中过渡材料层的材料为树脂酸材料。
  6. 如权利要求5所述的TFT基板的断线修复方法，其中，所述步骤4中过渡材料层的材料为C19H29COOH，所述过渡材料层随着金属长膜的形成不断气化。
  7. 如权利要求1所述的TFT基板的断线修复方法，其中，所述步骤4具体包括：将所述TFT基板传送至过渡材料站点以在所述钝化层和金属层上形成所述过渡材料层。
  8. 如权利要求1所述的TFT基板的断线修复方法，其中，
    所述TFT基板还包括设置在所述钝化层上的色阻层：
    在所述步骤3中，去除与该断点相邻区域内的部分色阻层，形成能够 连通断线上断点两端的色阻凹槽，所述色阻凹槽暴露出位于所述色阻层下方的所述钝化层；在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层；
    所述TFT基板的断线修复方法还包括步骤6、对具有所述色阻凹槽的子像素区域进行暗点化处理。
  9. 如权利要求8所述的TFT基板的断线修复方法，其中，在所述步骤4中，在所述色阻凹槽内部的钝化层及断点两端暴露的金属层上覆盖过渡材料层。
  10. 如权利要求8所述的TFT基板的断线修复方法，其中，所述步骤6中暗点化处理的具体步骤为：
    步骤61、将与所述金属长膜在空间上交错的存储电容电极线切断，将需要暗点化的子像素区域的源极与数据线之间的连接或者漏极与像素电极之间的连接切断；
    步骤62、将需要暗点化的子像素区域的像素电极与存储电容电极线熔接到一起。
  11. 一种TFT基板的断线修复方法，包括以下步骤：
    步骤1、提供一TFT基板；
    所述TFT基板包括：衬底基板、设置于所述衬底基板上图案化的第一金属层、覆盖在所述衬底基板及第一金属层上的绝缘层、设置在所述绝缘层上的图案化的第二金属层、覆盖在所述绝缘层及第二金属层上的钝化层；
    步骤2、找出所述TFT基板中的断线及该断线上断点的位置；
    步骤3、在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层；
    步骤4、在所述钝化层及断点两端暴露的金属层上覆盖过渡材料层；
    步骤5、在所述过渡材料层上形成金属长膜，以使所述断点两端的所述断线连通；
    其中，所述步骤2具体包括：将所述TFT基板放入阵列测试站点进行检测，找出所述TFT基板中的断线及该断线上断点的位置坐标，并记录该断点的坐标；
    其中，所述步骤3具体包括：将所述TFT基板传送至修补机台，所述修补机台根据断点的坐标查找到相应的断点；然后，通过激光打点的方式在所述钝化层与位于所述断点两端的所述断线相交的位置加工以暴露出所述金属层。
  12. 如权利要求11所述的TFT基板的断线修复方法，其中，所述步骤 4中过渡材料层的材料为铬、镉、或锡。
  13. 如权利要求11所述的TFT基板的断线修复方法，其中，所述步骤4中过渡材料层的材料为树脂酸材料。
  14. 如权利要求13所述的TFT基板的断线修复方法，其中，所述步骤4中过渡材料层的材料为C19H29COOH，所述过渡材料层随着金属长膜的形成不断气化。
  15. 如权利要求11所述的TFT基板的断线修复方法，其中，所述步骤4具体包括：将所述TFT基板传送至过渡材料站点以在所述钝化层和金属层上形成所述过渡材料层。
  16. 如权利要求11所述的TFT基板的断线修复方法，其中，
    所述TFT基板还包括设置在所述钝化层上的色阻层：
    在所述步骤3中，去除与该断点相邻区域内的部分色阻层，形成能够连通断线上断点两端的色阻凹槽，所述色阻凹槽暴露出位于所述色阻层下方的所述钝化层；在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层；
    所述TFT基板的断线修复方法还包括步骤6、对具有所述色阻凹槽的子像素区域进行暗点化处理。
  17. 如权利要求16所述的TFT基板的断线修复方法，其中，在所述步骤4中，在所述色阻凹槽内部的钝化层及断点两端暴露的金属层上覆盖过渡材料层。
  18. 如权利要求16所述的TFT基板的断线修复方法，其中，所述步骤6中暗点化处理的具体步骤为：
    步骤61、将与所述金属长膜在空间上交错的存储电容电极线切断，将需要暗点化的子像素区域的源极与数据线之间的连接或者漏极与像素电极之间的连接切断；
    步骤62、将需要暗点化的子像素区域的像素电极与存储电容电极线熔接到一起。
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KR20190006527A (ko) 2019-01-18
JP6734396B2 (ja) 2020-08-05
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US20180088365A1 (en) 2018-03-29
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