WO2017079943A1 - 具有亮点缺陷的像素的修复方法、阵列基板及液晶面板 - Google Patents

具有亮点缺陷的像素的修复方法、阵列基板及液晶面板 Download PDF

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WO2017079943A1
WO2017079943A1 PCT/CN2015/094464 CN2015094464W WO2017079943A1 WO 2017079943 A1 WO2017079943 A1 WO 2017079943A1 CN 2015094464 W CN2015094464 W CN 2015094464W WO 2017079943 A1 WO2017079943 A1 WO 2017079943A1
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pixel
region
common electrode
electrode
array substrate
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PCT/CN2015/094464
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English (en)
French (fr)
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阙祥灯
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深圳市华星光电技术有限公司
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Priority to US14/894,586 priority Critical patent/US10012881B2/en
Publication of WO2017079943A1 publication Critical patent/WO2017079943A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136268—Switch defects
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/10—Dealing with defective pixels

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular to a method for repairing a pixel having a bright spot defect, an array substrate, and a liquid crystal panel.
  • the bright spots appearing on the liquid crystal panel refer to the defect of the process of the thin film transistor (TFT), which causes some pixels (or pixel units) to always maintain a single color when the liquid crystal panel is displayed. This defect is very difficult to solve in the liquid crystal panel. A kind of trick.
  • TFT thin film transistor
  • At least one bright spot on the LCD panel will be downgraded, and if at least twenty bright spots appear, it will be directly scrapped.
  • the main solution to the bright spot defects appearing on the liquid crystal panel is to turn the bright spot into a dark spot.
  • the effect of dark spots on the LCD panel is much smaller than the effect of bright spots, but the dark spots are also a kind of flaw on the LCD panel. How to turn the bright spots appearing on the LCD panel into normal points is an urgent problem to be solved.
  • the present invention provides a repair method capable of repairing a bright spot to a normal point, an array substrate using the repair method to repair a pixel bright spot, and a liquid crystal panel having the array substrate.
  • a repair method for a pixel having a bright spot defect the pixel being disposed in a switch region and a pixel region on a side of the switch region;
  • the pixel includes: a continuous common electrode formed in the switch region and the pixel region; a thin film transistor formed in the switch region and located above the common electrode; in the switch region and a passivation layer formed by the pixel region and covering the thin film transistor and a via formed in the passivation layer in the switch region; formed in the pixel region and the switch region and located in the a pixel electrode above the passivation layer;
  • the repairing method includes: spotting a melting in the via hole to connect the pixel electrode to a drain electrode of the thin film transistor; and separating the continuous common electrode to be separated in the switch region a common electrode and a common electrode located in the pixel region are separated from each other; a pixel electrode located above the cut separation of the common electrode is removed, and a pixel electrode located in the switch region and a pixel located in the pixel region are removed The electrodes are connected to each other.
  • a specific method of spotting the holes in the via holes is to use a laser to spot the holes in the via holes, so that the pixel electrodes are in contact with the drain electrodes of the thin film transistors.
  • the common electrode includes: a main body portion located in the switch region and a plurality of parallel extension portions extending from the main body portion into the pixel region; wherein the continuous common electrode is cut off and separated Specifically, the laser is used to cut at the intersection of the main body portion and each of the extending portions, so that the main body portion and each of the extending portions and each of the extending portions are independent from each other.
  • a specific method of removing the pixel electrode located above the cut separation of the common electrode is to remove the pixel electrode located above the intersection of the main body portion and each of the extension portions.
  • an array substrate comprising a plurality of pixels arranged in an array, the pixels being disposed in a switch region and a pixel region on a side of the switch region;
  • the pixel When a pixel of the array substrate has a bright spot defect, the pixel includes: a continuous common electrode formed in the switch region and the pixel region; formed in the switch region and located in the a thin film transistor over the common electrode; a passivation layer formed in the switching region and the pixel region and covering the thin film transistor; and a via formed in the passivation layer in the switching region; a pixel region and a pixel electrode formed in the switch region and located above the passivation layer;
  • the method for repairing a pixel having a bright spot defect on the array substrate includes: performing melting in the via hole to connect the pixel electrode to a drain electrode of the thin film transistor; and the continuous public Separating the electrodes to separate the common electrode located in the switch region and the common electrode located in the pixel region from each other;
  • the pixel electrode located above the cut separation of the common electrode is removed, and the pixel electrode located in the switch region and the pixel electrode located in the pixel region are connected to each other.
  • a specific method of spotting the hole in the via hole is: spotting a spot in the via hole by using a laser to make the pixel electrode It is in contact with the drain electrode of the thin film transistor.
  • the common electrode includes: a main body portion located in the switch region and a plurality of extension portions extending from the main body portion into the pixel region; wherein pixels having bright spot defects appear on the array substrate
  • the specific method of cutting and separating the continuous common electrode is: cutting with a laser at the intersection of the main body portion and each of the extending portions to extend the main body portion and each of the extending portions The portion and each of the extensions are independent of each other.
  • the plurality of extensions are arranged in parallel.
  • a specific method of removing a pixel electrode located above the cut and separated portion of the common electrode is: being located at the main body portion and each The pixel electrodes above the intersection of the extensions are removed.
  • a liquid crystal panel including a color filter substrate disposed on a cartridge and the array substrate described above is further provided.
  • the beneficial effects of the present invention are: by separating and separating the common electrode located in the switch region and the pixel region to destroy the storage capacitor of the pixel, thereby forming the pixel as a pixel without a storage capacitor, thereby eliminating the bright spot defect of the pixel;
  • the drain electrode of the pixel is also in electrical contact with the pixel electrode, so that the pixel without the storage capacitor can also emit light normally, normalizing the bright spot defect of the pixel.
  • FIG. 1 is a plan view of a thin film transistor array substrate in accordance with an embodiment of the present invention.
  • FIG. 2 is a plan view showing the structure of a pixel in accordance with an embodiment of the present invention.
  • FIG 3 is a schematic structural view of a liquid crystal panel according to an embodiment of the present invention.
  • FIG. 1 is a plan view of a thin film transistor array substrate in accordance with an embodiment of the present invention.
  • the TFT array substrate 10 including an embodiment of the present invention: a plurality of transfer gate signal gate lines G 1 to G n, transmitting data signals a plurality of data lines D 1 D m arranged in an array and to Multiple pixels PX.
  • a plurality of gate lines G 1 through G n extend in a row direction and are substantially parallel to each other, and the plurality of data lines D 1 to D m extend in the column direction and substantially parallel to each other.
  • Each of the pixels PX includes a thin film transistor (TFT) connected to a corresponding gate line and a corresponding data line; a liquid crystal capacitor connected to the thin film transistor; and a storage capacitor connected in parallel with the liquid crystal capacitor.
  • TFT thin film transistor
  • each pixel PX according to an embodiment of the present invention will be described in detail below.
  • 2 is a structural plan view of a pixel in accordance with an embodiment of the present invention.
  • each of the pixels PX is disposed in the switch region 10a and the pixel region 10b on the side of the switch region 10a.
  • the pixel area 10b is located on the right side of the switch area 10a, but the present invention is not limited thereto.
  • the pixel area 10b may also be located on the left side of the switch area 10a.
  • a first metal layer is formed in the switching region 10a and the pixel region 10b, and the first metal layer is exposed and developed to form the gate electrode 110 in the switching region 10a while being in the switching region 10a and the pixel region 10b.
  • a continuous integrated common electrode 130 is formed.
  • the common electrode 130 serves as a bottom electrode of the storage capacitor.
  • the common electrode 130 includes a main body portion 131 located in the switch region 10a and three parallel extending portions 132 extending from the main body portion 131 into the pixel region 10b.
  • the description herein is merely an example, and the number of the extensions 132 in the present invention is not three. Restriction, which can be arbitrarily set according to the actual situation.
  • the metal material used for the first metal layer may be, for example, tantalum (Ta), molybdenum tantalum (MoTa), molybdenum tungsten (MoW), or aluminum (Al). It should be noted that the gate line G i (1 ⁇ i ⁇ n), the gate electrode 110, and the common electrode 130 are simultaneously formed, and the gate electrode 110 is connected to the gate line G i .
  • a gate insulating layer (not shown in FIG. 2) covering the gate electrode 110, the common electrode 130, and the gate line G i is formed. That is, the gate insulating layer is formed in the pixel region 10b and the switching region 10a.
  • the gate insulating layer may be made of silicon nitride and/or silicon oxide, but the invention is not limited thereto.
  • the active layer 111 is formed on the gate insulating layer on the switching region 10a.
  • the active layer 111 may be made of a material such as amorphous silicon, but the present invention is not limited thereto.
  • a second metal layer is formed on the active layer 111, and the second metal layer is exposed and developed to form source electrodes 112a and drain electrodes 112b independent of each other on the active layer 111.
  • the drain electrode 112b serves as a top electrode of the storage capacitor.
  • the metal material used for the second metal layer may be, for example, tantalum (Ta), molybdenum tantalum (MoTa), molybdenum tungsten (MoW), or aluminum (Al).
  • the data line D j (1 ⁇ j ⁇ m), the source electrode 112a, and the drain electrode 112b are simultaneously formed, and the source electrode 112a is connected to the data line D j .
  • a passivation layer (not shown) covering the active layer 111, the source electrode 112a, and the drain electrode 112b is formed on the gate insulating layer. That is, the passivation layer is formed in the pixel region 10b and the switching region 10a.
  • a via hole (not shown) is formed in the passivation layer located in the switch region 10a, wherein the via hole exposes the drain electrode 112b.
  • a pixel electrode 113 is formed on the passivation layer of the pixel region 10b, wherein the pixel electrode 113 extends onto the passivation layer of the switching region 10a and is in contact with the drain electrode 112b through the via hole.
  • each pixel PX is a normal luminescent pixel.
  • the formed pixel PX is an abnormal pixel, that is, such a pixel PX has a bright spot defect.
  • the method of repairing the pixel PX having the bright spot defect into the normally illuminated pixel PX is as follows:
  • the pixel electrode 113 and the drain electrode 112b are welded together by spot melting in the original via formed in the passivation layer of the switch region 10a.
  • the laser can be melted to dot the original via hole, and the pixel electrode 113 and the drain electrode 112b are welded together.
  • the continuous integrated common electrode 130 is cut and separated; wherein, in FIG. 2, the double curve of the intersection of the main body portion 131 of the common electrode 130 and each of the extending portions 132 indicates disconnection and separation.
  • the cutting can be performed at the intersection of the main body portion 131 of the common electrode 130 and each of the extending portions 132 by laser cutting, thereby cutting and separating the continuous integrated common electrode 130.
  • the present invention is not limited to the laser cutting method, and the common electrode 130 may be cut and separated by other micro-cutting methods.
  • the continuous integrated common electrode 130 is cut and separated along the intersection of the main body portion 131 of the common electrode 130 and each of the extending portions 132, such that between the main body portion 131 and each of the extending portions 132 and between the extending portions 132 Independent.
  • the opposite pixel electrode 113 above the cut-off separation portion of the common electrode 130 is removed while ensuring that the remaining pixel electrode 113 is in electrical contact with the drain electrode 112b. In this way, the pixel electrode 113 can be prevented from being in contact with the common electrode 130.
  • the pixel electrode 113 opposite to the intersection of the main body portion 131 of the common electrode 130 and each of the extending portions 132 is removed.
  • the main body portion 131 of the common electrode 130 and each of the extensions are extended.
  • a rectangular frame above the intersection of the portions 132 indicates that the pixel electrode 113 there is removed.
  • the present embodiment cuts off the respective extension portions 131 of the common electrode 130 located in the switching region 10a and the common electrode 130 located in the pixel region 10b to break the storage capacitor of the pixel PX having the bright spot defect. Therefore, the pixel PX is formed as a pixel without a storage capacitor, thereby eliminating the bright spot defect of the pixel PX; and the drain electrode 112b of the pixel PX is also in electrical contact with the pixel electrode 113, so that the pixel PX without the storage capacitor can still emit light normally. This normalizes the bright spot defects of the pixel PX.
  • the thin film transistor array substrate 10 is generally paired with a color filter substrate
  • the box forms a liquid crystal panel.
  • 3 is a schematic structural view of a liquid crystal panel according to an embodiment of the present invention.
  • a liquid crystal panel includes a thin film transistor array substrate 10 and a color filter substrate 20 provided to a cartridge.
  • the color filter substrate 20 generally includes components such as a black matrix, an alignment film, etc., but does not include a color RGB photoresist.
  • components such as a black matrix, an alignment film, etc., but does not include a color RGB photoresist.
  • specific structure of the color filter 20 reference may be made to related prior art, and details are not described herein again.
  • the color RGB photoresist is formed on the thin film transistor array substrate 10, and the related art also discloses such a technical solution, which can be known by those skilled in the art with reference to the related prior art.

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Abstract

一种具有亮点缺陷的像素的修复方法、阵列基板及液晶面板，其包括：在过孔中打点熔融，使像素电极（113）与薄膜晶体管的漏电极（112b）连接接触；将连续的公共电极（130）切断分离，以使位于开关区域（10a）的公共电极（130）和位于像素区域（10b）的公共电极（130）彼此分离；将位于公共电极（130）的切断分离处之上的像素电极（113）去除，且使位于开关区域（10a）的像素电极（113）和位于像素区域（10b）的像素电极（113）彼此连接。通过将位于开关区域（10a）和位于像素区域（10b）中的公共电极（130）切断分离，从而消除像素的亮点缺陷，并且将具有亮点缺陷的像素修复成能够正常发光的像素。

Description

具有亮点缺陷的像素的修复方法、阵列基板及液晶面板 技术领域
本发明属于液晶显示技术领域，具体地讲，涉及一种具有亮点缺陷的像素的修复方法、阵列基板及液晶面板。
背景技术
液晶面板上出现的亮点指的是由于薄膜晶体管(TFT)的制程缺陷，导致液晶面板显示时某些像素点(或称像素单元)始终保持单一颜色，这种缺陷是液晶面板中非常难解决的一种瑕疵。
一般情况下，液晶面板上出现至少一个亮点就会被降低等级，而其如果出现至少二十个亮点则会被直接报废。目前，对液晶面板上出现的亮点缺陷的主要解决方法是：将亮点变成暗点。在正常显示下，液晶面板上的暗点的影响要比亮点的影响小很多，但是暗点也是液晶面板上的一种瑕疵。如何将液晶面板上出现的亮点变成正常点，这是目前亟需解决的一个问题。
发明内容
为了解决上述现有技术存在的问题，本发明提供了一种能够将亮点修复为正常点的修复方法、利用该修复方法修复像素亮点的阵列基板以及具有该阵列基板的液晶面板。
根据本发明的一方面，提供了一种具有亮点缺陷的像素的修复方法，所述像素设置在开关区域及位于所述开关区域一侧的像素区域中；
所述像素包括：在所述开关区域和所述像素区域中形成的连续的公共电极；在所述开关区域中形成的且位于所述公共电极之上的薄膜晶体管；在所述开关区域和所述像素区域形成的且覆盖薄膜晶体管的钝化层以及在位于所述开关区域中的所述钝化层中形成的过孔；在所述像素区域和所述开关区域中形成的且位于所述钝化层之上的像素电极；
其中，所述修复方法包括：在所述过孔中打点熔融，使所述像素电极与所述薄膜晶体管的漏电极连接接触；将所述连续的公共电极切断分离，以使位于所述开关区域的公共电极和位于所述像素区域的公共电极彼此分离；将位于所述公共电极的切断分离处之上的像素电极去除，且使位于所述开关区域的像素电极和位于所述像素区域的像素电极彼此连接。
进一步地，在所述过孔中打点熔融的具体方法为：利用激光在所述过孔中打点熔融，使所述像素电极与所述薄膜晶体管的漏电极连接接触。
进一步地，所述公共电极包括：位于所述开关区域的主体部及由所述主体部延伸到所述像素区域中的多条平行的延伸部；其中，将所述连续的公共电极切断分离的具体方法为：利用激光在所述主体部与各所述延伸部的交汇处进行切割，以使所述主体部与各所述延伸部以及各所述延伸部之间相互独立。
进一步地，将位于所述公共电极的切断分离处之上的像素电极去除的具体方法为：将位于所述主体部与各所述延伸部的交汇处之上的像素电极去除。
根据本发明的另一方面，该提供了一种阵列基板，其包括阵列排布的多个像素，所述像素设置在开关区域及位于开关区域一侧的像素区域中；
当所述阵列基板上的所述像素出现亮点缺陷时，所述像素包括：在所述开关区域和所述像素区域中形成的连续的公共电极；在所述开关区域中形成的且位于所述公共电极之上的薄膜晶体管；在所述开关区域和所述像素区域形成的且覆盖薄膜晶体管的钝化层以及在位于所述开关区域中的所述钝化层中形成的过孔；在所述像素区域和所述开关区域中形成的且位于所述钝化层之上的像素电极；
其中，对所述阵列基板上出现亮点缺陷的像素进行修复的方法包括：在所述过孔中打点熔融，使所述像素电极与所述薄膜晶体管的漏电极连接接触；将所述连续的公共电极切断分离，以使位于所述开关区域的公共电极和位于所述像素区域的公共电极彼此分离；
将位于所述公共电极的切断分离处之上的像素电极去除，且使位于所述开关区域的像素电极和位于所述像素区域的像素电极彼此连接。
进一步地，在对所述阵列基板上出现亮点缺陷的像素进行修复的方法中，在所述过孔中打点熔融的具体方法为：利用激光在所述过孔中打点熔融，使所述像素电极与所述薄膜晶体管的漏电极连接接触。
进一步地，所述公共电极包括：位于所述开关区域的主体部及由所述主体部延伸到所述像素区域中的多条延伸部；其中，在对所述阵列基板上出现亮点缺陷的像素进行修复的方法中，将所述连续的公共电极切断分离的具体方法为：利用激光在所述主体部与各所述延伸部的交汇处进行切割，以使所述主体部与各所述延伸部以及各所述延伸部之间相互独立。
进一步地，所述多条延伸部平行设置。
进一步地，在对所述阵列基板上出现亮点缺陷的像素进行修复的方法中，将位于所述公共电极的切断分离处之上的像素电极去除的具体方法为：将位于所述主体部与各所述延伸部的交汇处之上的像素电极去除。
根据本发明的又一方面，又提供了一种液晶面板，包括对盒设置的彩色滤光片基板及上述的阵列基板。
本发明的有益效果：通过将位于开关区域和位于像素区域中的公共电极切断分离，以破坏像素的存储电容器，从而将该像素形成为没有存储电容器的像素，进而消除该像素的亮点缺陷；同时该像素的漏电极还与像素电极电接触，因此该没有存储电容器的像素还能正常发光，将像素的亮点缺陷正常化。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是根据本发明的实施例的薄膜晶体管阵列基板的平面图；
图2是根据本发明的实施例的像素的结构平面图；
图3是根据本发明的实施例的液晶面板的结构示意图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
图1是根据本发明的实施例的薄膜晶体管阵列基板的平面图。
参照图1，根据本发明的实施例的薄膜晶体管阵列基板10包括：传送栅极信号的多条栅极线G1至Gn、传送数据信号的多条数据线D1至Dm以及阵列布置的多个像素PX。
多条栅极线G1至Gn按行方向延伸并且彼此大致平行，而多条数据线D1至Dm按列方向延伸并且彼此大致平行。每个像素PX包括：薄膜晶体管(TFT)，其连接到相应的栅极线和相应的数据线；液晶电容器，连接到该薄膜晶体管；存储电容器，其与液晶电容器并联连接。
以下将对根据本发明的实施例的每个像素PX的结构进行详细描述。图2是根据本发明的实施例的像素的结构平面图。
参照图2，每个像素PX设置在开关区域10a和位于开关区域10a一侧的像素区域10b中。具体地，在本实施例中，像素区域10b位于开关区域10a的右侧，但本发明并不限制于此，例如，像素区域10b也可位于开关区域10a的左侧。
针对像素PX的制作过程，具体为：
首先，在开关区域10a和像素区域10b中形成第一金属层，并且对该第一金属层进行曝光、显影，以在开关区域10a中形成栅电极110，同时在开关区域10a和像素区域10b中形成连续一体的公共电极130。其中，该公共电极130作为存储电容器的底电极。
进一步地，在本实施例中，公共电极130包括：位于开关区域10a的主体部131以及由主体部131延伸到像素区域10b中的三条平行的延伸部132。当然，这里的描述仅仅是一种示例，本发明中的延伸部132的数量并不以三条为 限制，其可根据实际情况任意设置所需数量。
此外，第一金属层采用的金属材料可例如是钽(Ta)、钼钽(MoTa)、钼钨(MoW)或铝(Al)等。需要说明的是，栅极线Gi(1≤i≤n)、栅电极110和公共电极130三者同时形成，并且栅电极110连接到栅极线Gi。
接着，形成覆盖栅电极110、公共电极130和栅极线Gi的栅极绝缘层(图2中未示出)。也就是说，该栅极绝缘层形成在像素区域10b和开关区域10a中。这里，该栅极绝缘层可利用氮化硅和/或氧化硅制成，但本发明并不局限于此。
接着，在位于开关区域10a的栅极绝缘层上形成有源层111。这里，有源层111可由非晶硅等材料制成，但本发明并不局限于此。
接着，在有源层111上形成第二金属层，并且对第二金属层进行曝光、显影，以在有源层111上形成彼此独立的源电极112a和漏电极112b。其中，漏电极112b作为存储电容器的顶电极。这里，第二金属层采用的金属材料可例如是钽(Ta)、钼钽(MoTa)、钼钨(MoW)或铝(Al)等。此外，需要说明的是，数据线Dj(1≤j≤m)、源电极112a和漏电极112b三者同时形成，并且源电极112a连接到数据线Dj。
接着，在所述栅极绝缘层上形成覆盖有源层111、源电极112a和漏电极112b的钝化层(未示出)。也就是说，该钝化层形成在像素区域10b和开关区域10a中。
接着，在位于开关区域10a的钝化层中形成过孔(未示出)，其中，该过孔将漏电极112b露出。
最后，在像素区域10b的钝化层上形成像素电极113，其中，该像素电极113延伸至开关区域10a的钝化层上并通过所述过孔与漏电极112b连接接触。
以上为每个像素PX的形成过程，如果上述的像素PX的形成过程正常，那么制作完成的像素PX为正常发光像素。然而，在实际制作过程中，当在制作像素电极113的制程中，出现像素电极113与漏电极112b未连接等异常状况，那么形成的像素PX为异常像素，即这样的像素PX存在亮点缺陷。
下面将对当像素PX出现亮点缺陷时，如何将该具有亮点缺陷的像素PX修复成正常发光的像素PX进行详细说明。
继续参照图2，将具有亮点缺陷的像素PX修复成正常发光的像素PX的方法为：
首先，在位于开关区域10a的钝化层中形成的原有过孔中通过打点熔融的方式将像素电极113与漏电极112b熔接在一起。这里，可利用激光熔融的方式在原有过孔中打点，使像素电极113与漏电极112b熔接在一起。
接着，将连续一体的公共电极130切断分离；其中，在图2中，以公共电极130的主体部131与各延伸部132的交汇处的双曲线表示切断分离。在本实施例中，可采用激光切割的方式在公共电极130的主体部131与各延伸部132的交汇处进行切割，从而将连续一体的公共电极130切断分离。当然，本发明并不以激光切割方式为限，也可以利用其它的微切割方式对公共电极130进行切割分离。进一步地，沿着公共电极130的主体部131与各延伸部132的交汇处将连续一体的公共电极130切断分离，这样，主体部131与各延伸部132之间、以及各延伸部132之间相互独立。
接着，将公共电极130的切断分离处之上相对的像素电极113去除，同时确保剩余的像素电极113与漏电极112b电接触。这样，可避免像素电极113与公共电极130连接接触。具体地，在本实施例中，将公共电极130的主体部131与各延伸部132的交汇处之上相对的像素电极113去除，在图2中，以公共电极130的主体部131与各延伸部132的交汇处之上的矩形框表示该处的像素电极113被去除。
这样，本实施例通过将位于开关区域10a中的公共电极130的主体部131和位于像素区域10b中的公共电极130的各延伸部131切断分离，以破坏具有亮点缺陷的像素PX的存储电容器，从而将该像素PX形成为没有存储电容器的像素，进而消除该像素PX的亮点缺陷；同时该像素PX的漏电极112b还与像素电极113电接触，因此该没有存储电容器的像素PX还能正常发光，这样将像素PX的亮点缺陷正常化。
根据本发明的实施例的薄膜晶体管阵列基板10通常与彩色滤光片基板对 盒形成液晶面板。图3是根据本发明的实施例的液晶面板的结构示意图。
参照图3，根据本发明的实施例的液晶面板包括对盒设置的薄膜晶体管阵列基板10和彩色滤光片基板20。
在本实施例中，彩色滤光片基板20通常包括黑色矩阵、配向膜等元器件，但其不包括彩色RGB光阻。此外，关于彩色滤光板20的具体结构，可参照相关现有技术，在此不再赘述。
此外，在本实施例中，彩色RGB光阻是形成在薄膜晶体管阵列基板10上，相关现有技术也公开了这种技术方案，本领域的技术人员可参照相关的现有技术获知。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (15)

  1. 一种具有亮点缺陷的像素的修复方法，所述像素设置在开关区域及位于所述开关区域一侧的像素区域中；
    所述像素包括：
    在所述开关区域和所述像素区域中形成的连续的公共电极；
    在所述开关区域中形成的且位于所述公共电极之上的薄膜晶体管；
    在所述开关区域和所述像素区域形成的且覆盖薄膜晶体管的钝化层以及在位于所述开关区域中的所述钝化层中形成的过孔；
    在所述像素区域和所述开关区域中形成的且位于所述钝化层之上的像素电极；
    其中，所述修复方法包括：
    在所述过孔中打点熔融，使所述像素电极与所述薄膜晶体管的漏电极连接接触；
    将所述连续的公共电极切断分离，以使位于所述开关区域的公共电极和位于所述像素区域的公共电极彼此分离；
    将位于所述公共电极的切断分离处之上的像素电极去除，且使位于所述开关区域的像素电极和位于所述像素区域的像素电极彼此连接。
  2. 根据权利要求1所述的修复方法，其中，在所述过孔中打点熔融的具体方法为：利用激光在所述过孔中打点熔融，使所述像素电极与所述薄膜晶体管的漏电极连接接触。
  3. 根据权利要求1所述的修复方法，其中，所述公共电极包括：位于所述开关区域的主体部及由所述主体部延伸到所述像素区域中的多条平行的延伸部；
    其中，将所述连续的公共电极切断分离的具体方法为：利用激光在所述主体部与各所述延伸部的交汇处进行切割，以使所述主体部与各所述延伸部以及各所述延伸部之间相互独立。
  4. 根据权利要求2所述的修复方法，其中，所述公共电极包括：位于所述开关区域的主体部及由所述主体部延伸到所述像素区域中的多条平行的延伸部；
    其中，将所述连续的公共电极切断分离的具体方法为：利用激光在所述主体部与各所述延伸部的交汇处进行切割，以使所述主体部与各所述延伸部以及各所述延伸部之间相互独立。
  5. 根据权利要求3所述的修复方法，其中，将位于所述公共电极的切断分离处之上的像素电极去除的具体方法为：将位于所述主体部与各所述延伸部的交汇处之上的像素电极去除。
  6. 根据权利要求4所述的修复方法，其中，将位于所述公共电极的切断分离处之上的像素电极去除的具体方法为：将位于所述主体部与各所述延伸部的交汇处之上的像素电极去除。
  7. 一种阵列基板，其中，包括阵列排布的多个像素，所述像素设置在开关区域及位于开关区域一侧的像素区域中；
    当所述阵列基板上的所述像素出现亮点缺陷时，所述像素包括：
    在所述开关区域和所述像素区域中形成的连续的公共电极；
    在所述开关区域中形成的且位于所述公共电极之上的薄膜晶体管；
    在所述开关区域和所述像素区域形成的且覆盖薄膜晶体管的钝化层以及在位于所述开关区域中的所述钝化层中形成的过孔；
    在所述像素区域和所述开关区域中形成的且位于所述钝化层之上的像素电极；
    其中，对所述阵列基板上出现亮点缺陷的像素进行修复的方法包括：
    在所述过孔中打点熔融，使所述像素电极与所述薄膜晶体管的漏电极连接接触；
    将所述连续的公共电极切断分离，以使位于所述开关区域的公共电极和位于所述像素区域的公共电极彼此分离；
    将位于所述公共电极的切断分离处之上的像素电极去除，且使位于所述开关区域的像素电极和位于所述像素区域的像素电极彼此连接。
  8. 根据权利要求7所述的阵列基板，其中，在对所述阵列基板上出现亮点缺陷的像素进行修复的方法中，在所述过孔中打点熔融的具体方法为：利用激光在所述过孔中打点熔融，使所述像素电极与所述薄膜晶体管的漏电极连接接触。
  9. 根据权利要求7所述的阵列基板，其中，所述公共电极包括：位于所述开关区域的主体部及由所述主体部延伸到所述像素区域中的多条延伸部；
    其中，在对所述阵列基板上出现亮点缺陷的像素进行修复的方法中，将所述连续的公共电极切断分离的具体方法为：利用激光在所述主体部与各所述延伸部的交汇处进行切割，以使所述主体部与各所述延伸部以及各所述延伸部之间相互独立。
  10. 根据权利要求8所述的阵列基板，其中，所述公共电极包括：位于所述开关区域的主体部及由所述主体部延伸到所述像素区域中的多条延伸部；
    其中，在对所述阵列基板上出现亮点缺陷的像素进行修复的方法中，将所述连续的公共电极切断分离的具体方法为：利用激光在所述主体部与各所述延伸部的交汇处进行切割，以使所述主体部与各所述延伸部以及各所述延伸部之间相互独立。
  11. 根据权利要求9所述的阵列基板，其中，所述多条延伸部平行设置。
  12. 根据权利要求10所述的阵列基板，其中，所述多条延伸部平行设置。
  13. 根据权利要求9所述的阵列基板，其中，在对所述阵列基板上出现亮点缺陷的像素进行修复的方法中，将位于所述公共电极的切断分离处之上的像 素电极去除的具体方法为：将位于所述主体部与各所述延伸部的交汇处之上的像素电极去除。
  14. 根据权利要求10所述的阵列基板，其中，在对所述阵列基板上出现亮点缺陷的像素进行修复的方法中，将位于所述公共电极的切断分离处之上的像素电极去除的具体方法为：将位于所述主体部与各所述延伸部的交汇处之上的像素电极去除。
  15. 一种液晶面板，包括对盒设置的彩色滤光片基板及阵列基板，其中，所述阵列基板包括阵列排布的多个像素，所述像素设置在开关区域及位于开关区域一侧的像素区域中；
    当所述阵列基板上的所述像素出现亮点缺陷时，所述像素包括：
    在所述开关区域和所述像素区域中形成的连续的公共电极；
    在所述开关区域中形成的且位于所述公共电极之上的薄膜晶体管；
    在所述开关区域和所述像素区域形成的且覆盖薄膜晶体管的钝化层以及在位于所述开关区域中的所述钝化层中形成的过孔；
    在所述像素区域和所述开关区域中形成的且位于所述钝化层之上的像素电极；
    其中，对所述阵列基板上出现亮点缺陷的像素进行修复的方法包括：
    在所述过孔中打点熔融，使所述像素电极与所述薄膜晶体管的漏电极连接接触；
    将所述连续的公共电极切断分离，以使位于所述开关区域的公共电极和位于所述像素区域的公共电极彼此分离；
    将位于所述公共电极的切断分离处之上的像素电极去除，且使位于所述开关区域的像素电极和位于所述像素区域的像素电极彼此连接。
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