CN105759522B - Tft基板的断线修复方法 - Google Patents
Tft基板的断线修复方法 Download PDFInfo
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Abstract
本发明提供一种TFT基板的断线修复方法,该方法首先找出所述TFT基板中的断线及该断线上断点的位置,再在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层,然后在所述钝化层及断点两端暴露的金属层上覆盖过渡材料层,最后在所述过渡材料层上形成金属长膜,以使所述断点两端的所述断线连通,通过过渡材料层的设置能够解决因色阻层残留或钝化层褶皱造成修复效果不佳的问题,提升金属长膜在钝化层上的附着效果及均匀程度,降低金属长膜的断线与剥落风险,提升TFT基板的断线修复成功率。
Description
技术领域
本发明涉及液晶显示技术领域,尤其涉及一种TFT基板的断线修复方法。
背景技术
液晶显示器(Liquid Crystal Display,LCD)是目前最广泛使用的平板显示器之一,液晶面板是液晶显示器的核心组成部分。
传统的液晶面板通常是由一彩色滤光片(Color Filter,CF)基板、一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate,TFT Array Substrate)以及一配置于两基板间的液晶层(Liquid Crystal Layer)所构成,其工作原理是在两片平行的玻璃基板当中放置液晶分子,两片玻璃基板中间有许多垂直和水平的细小电线,通过通电与否来控制液晶分子改变方向,将背光模组的光线折射出来产生画面。其中薄膜晶体管阵列基板上制备有薄膜晶体管(TFT)阵列,用于驱动液晶的旋转,控制每个像素的显示,而彩色滤光片基板上设有彩色滤光层,用于形成每个像素的色彩。彩色滤光层由红色色阻(Red)、绿色色阻(Green)、及蓝色色阻(Blue)交替排列组成。
TFT基板的断线是指由于TFT基板的制程缺陷导致液晶显示面板中的驱动线或信号线发生断点,使液晶显示器进行显示时某些像素点始终呈亮态的现象。由于断线是由TFT基板的制程缺陷产生的,通过改进生产制程也始终不能将断线比例降低为0,是液晶显示器中不可避免的不良。具有断线的液晶显示器的品味差,若出货过程中发现断线,该液晶显示器需要进行报废处理,使生产的成本提升。为了减少报废量,降低生产成本,现有技术会在TFT基板的制程完成后对TFT基板进行断线检测,并对检查出的断线加以修复。
请参阅图1及图2,为一种现有的TFT断线修复方法修复后的TFT基板的结构示意图及修复位置的剖视示意图,该TFT断线修复方法在断线20’的断点21’相邻的子像素区域上设置修复结构,首先将与断点21’相邻的子像素区域上位于钝化层500’上的部分色阻层600’去除(Remove),形成能够连通断点21’两端的色阻凹槽610’,接着在断点21’两端进行激光打点(laser welding),将断线20’中位于断点21’两端上的钝化层500’、或钝化层500’及绝缘层300’去除,之后利用激光化学气相沉积法(Laser CVD)在色阻凹槽610’中形成金属长膜700’将断线20’导通,然后在色阻凹槽610’所在的子像素区域做暗点,完成TFT断线的修复。这种断线的修复方法在进行色阻去除时,若去除色阻的能量过小,会导致钝化层500’上留有色阻残留,若去除色阻的能量过大,会在钝化层500’上形成褶皱,最终会使金属长膜700’局部过细及金属长膜700’与钝化层500’的附着效果差,容易造成金属长膜700’的断线与剥落(Peeling)风险,降低TFT断线的修复成功率。
发明内容
本发明的目的在于提供一种TFT基板的断线修复方法,能够提升金属长膜的附着效果及均匀程度,降低金属长膜的断线与剥落风险,提升TFT基板的断线修复成功率,保证产品质量,提升产品竞争力。
为实现上述目的,本发明提供一种TFT基板的断线修复方法,包括以下步骤:
步骤1、提供一TFT基板;
所述TFT基板包括:衬底基板、设置于所述衬底基板上图案化的第一金属层、覆盖在所述衬底基板及第一金属层上的绝缘层、设置在所述绝缘层上的图案化的第二金属层、覆盖在所述绝缘层及第二金属层上的钝化层;
步骤2、找出所述TFT基板中的断线及该断线上断点的位置;
步骤3、在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层;
步骤4、在所述钝化层及断点两端暴露的金属层上覆盖过渡材料层;
步骤5、在所述过渡材料层上形成金属长膜,以使所述断点两端的所述断线连通。
所述步骤4中过渡材料层的材料为铬、镉、或锡。
所述步骤2具体包括:将所述TFT基板放入阵列测试站点进行检测,找出所述TFT基板中的断线及该断线上断点的位置坐标,并记录该断点的坐标。
所述步骤3具体包括:将所述TFT基板传送至修补机台,所述修补机台根据断点的坐标查找到相应的断点;然后,通过激光打点的方式在所述钝化层与位于所述断点两端的所述断线相交的位置加工以暴露出所述金属层。
所述步骤4中过渡材料层的材料为树脂酸材料。
所述步骤4中过渡材料层的材料为C19H29COOH,所述过渡材料层随着金属长膜的形成不断气化。
所述步骤4具体包括:将所述TFT基板传送至过渡材料站点以在所述钝化层和金属层上形成所述过渡材料层。
所述TFT基板还包括设置在所述钝化层上的色阻层:
在所述步骤3中,去除与该断点相邻区域内的部分色阻层,形成能够连通断线上断点两端的色阻凹槽,所述色阻凹槽暴露出位于所述色阻层下方的所述钝化层;在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层;
所述TFT基板的断线修复方法还包括步骤6、对具有所述色阻凹槽的子像素区域进行暗点化处理。
在所述步骤4中,在所述色阻凹槽内部的钝化层及断点两端暴露的金属层上覆盖过渡材料层。
所述步骤6中暗点化处理的具体步骤为:
步骤61、将与所述金属长膜在空间上交错的存储电容电极线切断,将需要暗点化的子像素区域的源极与数据线之间的连接或者漏极与像素电极之间的连接切断;
步骤62、将需要暗点化的子像素区域的像素电极与存储电容电极线熔接到一起。
本发明的有益效果:本发明提供的TFT基板的断线修复方法,该方法首先找出所述TFT基板中的断线及该断线上断点的位置,再在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层,然后在所述钝化层及断点两端暴露的金属层上覆盖过渡材料层,最后在所述过渡材料层上形成金属长膜,以使所述断点两端的所述断线连通,通过过渡材料层的设置能够解决因色阻层残留或钝化层褶皱造成修复效果不佳的问题,提升金属长膜在钝化层上的附着效果及均匀程度,降低金属长膜的断线与剥落风险,提升TFT基板的断线修复成功率。
附图说明
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图中,
图1为采用现有的TFT基板的断线修复方法修复后的TFT基板的结构示意图;
图2为对应图1中A-A’处的剖视示意图;
图3为应用本发明的TFT基板的断线修复方法修复TFT基板显示区内断线时的流程图;
图4为图3所示流程图中步骤1的示意图;
图5为对应图4中B-B’线处的剖视示意图;
图6为图3所示流程图中步骤3的示意图;
图7为对应图6中B-B’线处的剖视示意图;
图8为图3所示流程图中步骤4的示意图;
图9为对应图8中B-B’线处的剖视示意图;
图10为图3所示流程图中步骤5的示意图;
图11为当过渡材料层的材料为金属材料时图10中B-B’线处的剖视示意图;
图12为当过渡材料层的材料为树脂酸材料时图10中B-B’线处的剖视示意图;
图13为图3所示流程图中步骤6的示意图;
图14为本发明的TFT基板的断线修复方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图14,并结合图3,本发明提供一种TFT基板的断线修复方法,应用该方法修复TFT基板的显示区内断线时,包括以下步骤:
步骤1、请参阅图4及图5,提供一待TFT断线修复的TFT基板1。
具体地,所述TFT基板1包括:衬底基板100、设置于所述衬底基板100上的图案化的第一金属层200、覆盖在所述衬底基板100及第一金属层200上的栅极绝缘层300、设置在所述栅极绝缘层300上的图案化的第二金属层400、覆盖在所述栅极绝缘层300及第二金属层400上的钝化层500、及设置在所述钝化层500上的色阻层600;
所述第一金属层200包括若干平行间隔排布的驱动线210,所述第二金属层400包括若干平行间隔排布的数据线410,所述驱动线210与数据线410在空间垂直交错形成若干阵列排布的子像素区域。
进一步地,所述步骤1中第一金属层200还包括:覆盖各个子像素区域的存储电容电极线(CST Line)220、以及分别对应各个阵列排布的子像素区域形成多个栅极(未图示),所述多个栅极分别与其所在的子像素区域对应的驱动线210电性连接;所述绝缘层300包括层叠设置的栅极绝缘层及层间绝缘层,在所述多个栅极上方的栅极绝缘层与层间绝缘层之间形成有多个半导体层310;所述步骤1中第二金属层400还包括:分别对应各个阵列排布的子像素区域形成的多个源极420和漏极430,所述多个源极420和漏极430分别与对应的半导体层310的两端相接触,所述多个源极420分别与其所在的子像素区域对应的数据线410电性连接;所述TFT基板1还包括设于所述色阻层600上分别对应各个子像素区域形成的多个像素电极(未图示),所述多个像素电极分别与其所在的子像素区域对应的漏极430电性连接。
需要说明的是,所述栅极、半导体层310、源极420、漏极430共同形成各个子像素区域的开关TFT,以控制数据信号的写入。所述源极420、漏极430通过形成于所述层间绝缘层上过孔与所述半导体层310接触,所述像素电极通过形成于所述色阻层600和钝化层500上的过孔与所述漏极430接触,所述像素电极与所述存储电容电极线220绝缘交叠形成存储电容。优选地,所述绝缘层300和钝化层500的材料为氧化硅、氮化硅、或二者的组合,所述第一金属层200和第二金属层400的材料为铝、或铜。
具体地,所述色阻层600包括多种不同颜色的色阻,优选地,所述步骤1中色阻层600包括依次交替排列的红色色阻R、绿色色阻G、及蓝色色阻B,当然根据需要所述色阻层600还可以进一步包括白色色阻、黄色色阻等各种颜色的色阻。
步骤2、将所述TFT基板1放入阵列测试站点进行检测,找出所述TFT基板1中的断线20及该断线20上断点21的位置坐标,并记录该断点21的坐标。
具体地,所述断点21的坐标记录于相应的修复系统中,从而使得各个设备可以从修复系统中获取该坐标,及时找到断点21的位置。
具体地,该断线20可以为驱动线210,也可以为数据线410。
步骤3、将所述TFT基板1传送至修补机台,修补机台根据断点21的坐标查找到相应的断点21,并利用激光去除与该断点21相邻的一子像素区域内的部分色阻层600,形成能够连通断线20上断点21两端的色阻凹槽610,再在断线20上断点21两端的位置进行激光打点,暴露出断点21两端的金属层。
请参阅图6及图7,当断线20为数据线410时,激光打点时需要去除断点21两端的钝化层500,当断线20为驱动线210时,激光打点需要去除断点21两端的钝化层500及绝缘层300。此外,图6中去除的是断点21右侧一子像素区域内的部分色阻层600,根据需要还可以采用去除断点21左侧的一子像素区域内的部分色阻层600的方案。
步骤4、请参阅图8及图9,将所述TFT基板1传送至过渡材料站点,在所述色阻凹槽610内部的钝化层500及断点21两端暴露的金属层上覆盖过渡材料层700。
具体地,所述过渡材料700层的材料可以为有强粘附力的金属,优选铬、镉、或锡。所述过渡材料700层的材料还可以为树脂酸材料,优选C19H29COOH。
步骤5、将所述TFT基板1传送至激光CVD设备,利用激光CVD工艺在所述过渡材料层700上形成金属长膜800。
具体地,请参阅图10及图11,过渡材料层700为有强粘附力的金属,金属长膜800通过过渡材料层700及断点21两端的激光孔将断点21两端连接,使断线20连通,正常传输信号,完成对断线20的修复。
需要说明的是,由于铬、镉、或锡与金属和非金属均具有较强的粘附力,使过渡材料层700能够与钝化层500、及金属长膜800牢固粘合,提升金属层长膜800在钝化层500上的附着效果,能够有效防止金属长膜800的脱落;同时过渡材料层700能够填补由于修补机台去色阻能量过大导致的钝化层褶皱及去色阻能量过小导致的色阻残留,使得金属长膜800的附着平面平坦,能够提升金属长膜800的均匀度,防止金属长膜800出现局部过细而产生断线,提升TFT基板的断线修复成功率。
具体地,请参阅图10及图12,过渡材料层700为树脂酸,金属长膜800在进行制作的过程中,会放出热量使树脂酸气化,使过渡材料层700消失,在金属长膜800制作完成后,金属长膜800通过断点21两端的激光孔将断点21两端连接,使断线20连通,正常传输信号,完成对断线20的修复。
需要说明的是,由于树脂酸会受热气化,在金属长膜800的制作过程中,形成金属长膜800的熔融的金属在树脂酸的气化过程中不断沉积、流平,使得金属长膜800内的金属分子之间能够更加紧密,可提升金属长膜800在钝化层500上的附着效果与均匀性,提升TFT基板的断线修复成功率。
步骤6、对具有色阻凹槽610的子像素区域进行暗点化处理,完成TFT基板的断线修复。
具体地,请参阅图13,所述步骤6具体包括:
步骤61、先将与所述金属长膜800在空间上交错的存储电容电极线220切断,防止金属长膜800与存储电容电极线220短路。
再将需要暗点化的子像素区域的源极420与数据线410之间的连接或者漏极420与像素电极之间的连接切断。
步骤62、将需要暗点化的子像素区域的像素电极与存储电容电极线220熔接到一起,使得该子像素区域呈暗点化状态。
具体地,所述断线20修复完成后再对TFT基板1进行复检,确认修复成功即可出货。
可以理解的是,本发明所提出的增设过渡材料层的修复方式也适用于非显示区等其他类似位置:
首先,通过加工裸露出待修复金属线上方的钝化层区域,这里的加工方式包括常规的物理或化学方式以移除钝化层上方的其他结构(对应前述实施例中显示区的色阻层),以裸露出待修复金属线断点附近上方的钝化层,此处钝化层也可称作绝缘层;
然后,通过激光打点的方式加工钝化层,以在断点两端的待修复断线与钝化层相交的位置暴露出该断线所处的金属层;
最后,依次在该钝化层及断点两端暴露出的金属层上覆盖过渡材料层700和金属长膜800,使断点两段的待修复断线通过过渡材料层700和金属长膜800恢复导通。这里过渡材料层的材料与前述实施例相同,这里不再赘述。
值得说明的是,本发明应用于非显示区断线修复的其他具体细节属于本领域现有技术,也不再一一说明。
综上所述,本发明提供的TFT基板的断线修复方法,该方法首先找出所述TFT基板中的断线及该断线上断点的位置,再在所述钝化层与位于所述断点两端的所述断线相交的位置分别进行加工以暴露出所述断线所处的金属层,然后在所述钝化层及断点两端暴露的金属层上覆盖过渡材料层,最后在所述过渡材料层上形成金属长膜,以使所述断点两端的所述断线连通,通过过渡材料层的设置能够解决因色阻层残留或钝化层褶皱造成修复效果不佳的问题,提升金属长膜在钝化层上的附着效果及均匀程度,降低金属长膜的断线与剥落风险,提升TFT基板的断线修复成功率。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。
Claims (10)
1.一种TFT基板的断线修复方法,包括以下步骤:
步骤1、提供一TFT基板(1);
所述TFT基板(1)包括:衬底基板(100)、设置于所述衬底基板(100)上图案化的第一金属层(200)、覆盖在所述衬底基板(100)及第一金属层(200)上的绝缘层(300)、设置在所述绝缘层(300)上的图案化的第二金属层(400)、覆盖在所述绝缘层(300)及第二金属层(400)上的钝化层(500);
步骤2、找出所述TFT基板(1)中的断线(20)及该断线(20)上断点(21)的位置;
步骤3、在所述钝化层(500)与位于所述断点(21)两端的所述断线(20)相交的位置分别进行加工以暴露出所述断线(20)所处的金属层;
其特征在于,步骤4、在所述钝化层(500)及断点(21)两端暴露的金属层上覆盖过渡材料层(700);
步骤5、在所述过渡材料层(700)上形成金属长膜(800),以使所述断点(21)两端的所述断线(20)连通。
2.如权利要求1所述的TFT基板的断线修复方法,其特征在于,所述步骤4中过渡材料层(700)的材料为铬、镉、或锡。
3.如权利要求1所述的TFT基板的断线修复方法,其特征在于,所述步骤2具体包括:将所述TFT基板(1)放入阵列测试站点进行检测,找出所述TFT基板(1)中的断线(20)及该断线(20)上断点(21)的位置坐标,并记录该断点(21)的坐标。
4.如权利要求3所述的TFT基板的断线修复方法,其特征在于,所述步骤3具体包括:将所述TFT基板(1)传送至修补机台,所述修补机台根据断点(21)的坐标查找到相应的断点(21);然后,通过激光打点的方式在所述钝化层(500)与位于所述断点(21)两端的所述断线(20)相交的位置加工以暴露出所述金属层。
5.如权利要求1所述的TFT基板的断线修复方法,其特征在于,所述步骤4中过渡材料层(700)的材料为树脂酸材料。
6.如权利要求5所述的TFT基板的断线修复方法,其特征在于,所述步骤4中过渡材料层(700)的材料为C19H29COOH,所述过渡材料层(700)随着金属长膜(800)的形成不断气化。
7.如权利要求1所述的TFT基板的断线修复方法,其特征在于,所述步骤4具体包括:将所述TFT基板(1)传送至过渡材料站点以在所述钝化层(500)和金属层上形成所述过渡材料层(700)。
8.如权利要求1所述的TFT基板的断线修复方法,其特征在于
所述TFT基板(1)还包括设置在所述钝化层(500)上的色阻层:
在所述步骤3中,去除与该断点(21)相邻区域内的部分色阻层(600),形成能够连通断线(20)上断点(21)两端的色阻凹槽(610),所述色阻凹槽(610)暴露出位于所述色阻层下方的所述钝化层(500);在所述钝化层(500)与位于所述断点(21)两端的所述断线(20)相交的位置分别进行加工以暴露出所述断线(20)所处的金属层;
所述TFT基板的断线修复方法还包括步骤6、对具有所述色阻凹槽(610)的子像素区域进行暗点化处理。
9.如权利要求8所述的TFT基板的断线修复方法,其特征在于,在所述步骤4中,在所述色阻凹槽(610)内部的钝化层(500)及断点(21)两端暴露的金属层上覆盖过渡材料层(700)。
10.如权利要求8所述的TFT基板的断线修复方法,其特征在于,所述步骤6中暗点化处理的具体步骤为:
步骤61、将与所述金属长膜(800)在空间上交错的存储电容电极线(220)切断,将需要暗点化的子像素区域的源极(420)与数据线(410)之间的连接或者漏极(420)与像素电极之间的连接切断;
步骤62、将需要暗点化的子像素区域的像素电极与存储电容电极线(220)熔接到一起。
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