WO2017013796A1 - 半導体装置用ボンディングワイヤ - Google Patents
半導体装置用ボンディングワイヤ Download PDFInfo
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- WO2017013796A1 WO2017013796A1 PCT/JP2015/071002 JP2015071002W WO2017013796A1 WO 2017013796 A1 WO2017013796 A1 WO 2017013796A1 JP 2015071002 W JP2015071002 W JP 2015071002W WO 2017013796 A1 WO2017013796 A1 WO 2017013796A1
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- wire
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- coating layer
- core material
- bonding wire
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- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0227—Rods, wires
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Abstract
Description
(1)Cuを主成分とし、Pd、Ptの一方又は両方を総計で0.1~3.0質量%含有する芯材と、該芯材表面に設けられたPdを主成分とする被覆層と、該被覆層表面に設けられたAuとPdを含む表皮合金層とを含む半導体装置用ボンディングワイヤにおいて、ワイヤ最表面におけるCu濃度が1~10at%であることを特徴とする半導体装置用ボンディングワイヤ。
(2)前記Pdを主成分とする被覆層の厚さが20~90nm、前記AuとPdを含む表皮合金層の厚さが0.5~40nm、Auの最大濃度が15~75at%であることを特徴とする(1)に記載の半導体装置用ボンディングワイヤ。
(3)前記芯材が、さらにAu、Niの一方又は両方を含有し、芯材中のPd、Pt、Au、Niの総計が0.1質量%を超え3.0質量%以下であることを特徴とする(1)又は(2)に記載の半導体装置用ボンディングワイヤ。
(4)前記ボンディングワイヤが、さらにP、B、Be、Fe、Mg、Ti、Zn、Ag、Siの1種以上を含有し、ワイヤ全体に占めるこれら元素濃度の総計が0.0001~0.01質量%の範囲であることを特徴とする(1)乃至(3)のいずれかに記載の半導体装置用ボンディングワイヤ。
(5)前記芯材と前記被覆層との境界部、および前記被覆層と前記表皮合金層との境界部に拡散領域を有することを特徴とする(1)乃至(4)のいずれかに記載の半導体装置用ボンディングワイヤ。
(6)前記ボンディングワイヤのワイヤ軸に垂直方向の芯材断面(以下「垂直断面」という。)に対して結晶方位を測定した結果において、ワイヤ長手方向の結晶方位の内、ワイヤ長手方向に対して角度差が15°以下である結晶方位<100>の方位比率が30%以上であることを特徴とする(1)乃至(5)のいずれかに記載の半導体装置用ボンディングワイヤ。
前述のようにCu合金芯材の酸化を抑制するため、Cu合金芯材の表面に形成するPdを主成分とする被覆層の厚みは20~90nmが好ましい。被覆層の厚みが20nm以上であれば酸化抑制効果が充分となり、2nd接合性とFAB形状が良好となるため好ましい。なお、FAB形状とは、真球性、偏芯の有無、および引け巣の有無を意味する。被覆層の厚みは、より好ましくは25nm以上、又は30nm以上である。また、被覆層の厚みが90nm以下であれば、チップダメージが低減すると共にFAB形状が良好となり、さらにボール部の表面に直径数μmの大きさの気泡が生じることが少なく、好ましい。被覆層の厚みは、より好ましくは85nm以下、又は80nm以下である。
前述のとおり、Cu合金芯材の表面にPdを主成分とする被覆層を有する構成のみでは、Pdめっきリードフレーム上で良好な2nd接合性を確保することはできない。本発明においては、Pdを主成分とする被覆層の表面に更にAuとPdを含む表皮合金層を形成する。AuとPdを含む表皮合金層の厚さは0.5~40nmが好ましい。ワイヤの最表面の領域がAuとPdとの合金層であれば、Pdめっきリードフレーム上にワイヤを2nd接合させる際、ワイヤの最表面を構成する表皮合金層中のAuがPdめっきリードフレーム上のPdに向けて優先的に拡散し、ボンディングワイヤとPdめっきリードフレームの両者の間に合金層を形成しやすくする。そのため、Pdめっきリードフレームとの2nd接合性が向上する。また、AuフラッシュめっきされたPdめっきリードフレーム上でも同様に2nd接合性が向上することを確認しており、この場合はリードフレーム上の極薄フラッシュメッキのAuと表皮合金層中のAuのお互いの密着性促進効果によると考えられる。PdめっきリードフレームあるいはPdめっきの上にAuめっきを施したリードフレームに対する2nd接合性を改善する観点から、表皮合金層の厚みは好ましくは0.5nm以上、より好ましくは1nm以上、2nm以上、又は3nm以上である。一方、表皮合金層の厚みが厚すぎると、FAB形状が悪化する場合があり、また、高価なAuの使用量が増えてコストアップとなることから、表皮合金層の厚みは好ましくは40nm以下、より好ましくは35nm以下、又は30nm以下である。
Claims (6)
- Cuを主成分とし、Pd、Ptの一方又は両方を総計で0.1~3.0質量%含有する芯材と、該芯材表面に設けられたPdを主成分とする被覆層と、該被覆層表面に設けられたAuとPdを含む表皮合金層とを含む半導体装置用ボンディングワイヤにおいて、ワイヤ最表面におけるCu濃度が1~10at%であることを特徴とする半導体装置用ボンディングワイヤ。
- 前記Pdを主成分とする被覆層の厚さが20~90nm、前記AuとPdを含む表皮合金層の厚さが0.5~40nm、Auの最大濃度が15~75at%であることを特徴とする請求項1に記載の半導体装置用ボンディングワイヤ。
- 前記芯材が、さらにAu、Niの一方又は両方を含有し、芯材中のPd、Pt、Au、Niの総計が0.1質量%を超え3.0質量%以下であることを特徴とする請求項1又は2に記載の半導体装置用ボンディングワイヤ。
- 前記ボンディングワイヤが、さらにP、B、Be、Fe、Mg、Ti、Zn、Ag、Siの1種以上を含有し、ワイヤ全体に占めるこれら元素濃度の総計が0.0001~0.01質量%の範囲であることを特徴とする請求項1乃至3のいずれかに記載の半導体装置用ボンディングワイヤ。
- 前記芯材と前記被覆層との境界部、および前記被覆層と前記表皮合金層との境界部に拡散領域を有することを特徴とする請求項1乃至4のいずれかに記載の半導体装置用ボンディングワイヤ。
- 前記ボンディングワイヤのワイヤ軸に垂直方向の芯材断面(以下「垂直断面」という。)に対して結晶方位を測定した結果において、ワイヤ長手方向の結晶方位の内、ワイヤ長手方向に対して角度差が15°以下である結晶方位<100>の方位比率が30%以上であることを特徴とする請求項1乃至5のいずれかに記載の半導体装置用ボンディングワイヤ。
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- 2015-07-23 KR KR1020167012367A patent/KR101659254B1/ko active IP Right Grant
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- 2015-07-23 JP JP2015540380A patent/JP5893230B1/ja active Active
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- 2015-12-28 MY MYPI2016702688A patent/MY162882A/en unknown
- 2015-12-28 KR KR1020167019958A patent/KR101742450B1/ko active IP Right Grant
- 2015-12-28 DE DE112015005005.1T patent/DE112015005005B4/de active Active
- 2015-12-28 JP JP2016507915A patent/JP5964534B1/ja active Active
- 2015-12-28 WO PCT/JP2015/086550 patent/WO2017013817A1/ja active Application Filing
- 2015-12-28 US US15/116,145 patent/US9773748B2/en active Active
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US11929343B2 (en) | 2021-06-25 | 2024-03-12 | Nippon Micrometal Corporation | Bonding wire for semiconductor devices |
DE112022001995T5 (de) | 2021-06-25 | 2024-01-25 | Nippon Micrometal Corporation | Bonddraht für Halbleitervorrichtungen |
KR20240015610A (ko) | 2021-06-25 | 2024-02-05 | 닛데쓰마이크로메탈가부시키가이샤 | 반도체 장치용 본딩 와이어 |
KR20240015611A (ko) | 2021-06-25 | 2024-02-05 | 닛데쓰마이크로메탈가부시키가이샤 | 반도체 장치용 본딩 와이어 |
WO2022270050A1 (ja) | 2021-06-25 | 2022-12-29 | 日鉄マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
KR20240026929A (ko) | 2021-06-25 | 2024-02-29 | 닛데쓰마이크로메탈가부시키가이샤 | 반도체 장치용 본딩 와이어 |
KR20240026927A (ko) | 2021-06-25 | 2024-02-29 | 닛데쓰마이크로메탈가부시키가이샤 | 반도체 장치용 본딩 와이어 |
DE112022002498T5 (de) | 2021-06-25 | 2024-02-29 | Nippon Micrometal Corporation | Bonddraht für Halbleitervorrichtungen |
KR20240026928A (ko) | 2021-06-25 | 2024-02-29 | 닛데쓰마이크로메탈가부시키가이샤 | 반도체 장치용 본딩 와이어 |
KR20240027868A (ko) | 2022-06-24 | 2024-03-04 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
WO2023248491A1 (ja) | 2022-06-24 | 2023-12-28 | 日鉄ケミカル&マテリアル株式会社 | 半導体装置用ボンディングワイヤ |
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