WO2016181594A1 - 研削用砥石 - Google Patents
研削用砥石 Download PDFInfo
- Publication number
- WO2016181594A1 WO2016181594A1 PCT/JP2016/001362 JP2016001362W WO2016181594A1 WO 2016181594 A1 WO2016181594 A1 WO 2016181594A1 JP 2016001362 W JP2016001362 W JP 2016001362W WO 2016181594 A1 WO2016181594 A1 WO 2016181594A1
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- WIPO (PCT)
- Prior art keywords
- grinding
- grinding wheel
- workpiece
- base metal
- annular base
- Prior art date
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- 239000004575 stone Substances 0.000 title claims abstract description 10
- 239000010953 base metal Substances 0.000 claims abstract description 20
- 230000006378 damage Effects 0.000 abstract description 6
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000009528 severe injury Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000005452 bending Methods 0.000 description 6
- 238000000465 moulding Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
- B24D7/066—Grinding blocks; their mountings or supports
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/14—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
Definitions
- the present invention relates to a grinding wheel used by being mounted on a grinding apparatus.
- double-head grinding there is a grinding method called double-head grinding in which both sides are ground simultaneously in precision machining of a disk-shaped workpiece such as a semiconductor wafer.
- double-head grinding a cup-type wheel is used as a grinding wheel, and a plurality of grinding wheel chips are provided on the outer periphery.
- the shape of the grindstone having a long side substantially parallel to the rotation direction is formed into a rectangular parallelepiped.
- the cuboidal grindstone tip has a ridge with an inner angle of 90 ° when viewed from the height direction (that is, four ridges between the four side surfaces adjacent to the rectangular grinding surface in the rectangular parallelepiped grindstone chip). Since the cutting is performed perpendicularly to the center and the movement load in the rotation direction becomes large, the work center portion is easily damaged violently, and shape control near the work center is difficult.
- the present invention has been made in view of the above-described problems, and provides a grinding wheel capable of suppressing severe damage to a workpiece due to excessive cutting into the center of the workpiece by simple molding without being damaged during grinding.
- the purpose is to do.
- the present invention provides a grinding wheel in which a plurality of vitrified bond grindstone tips are arranged on the outer periphery of an annular base metal, and the workpiece is ground with the grinding stone tip while rotating the annular base metal.
- the vitrified bond grinding wheel tip is a rectangular parallelepiped having a rectangular grinding surface for grinding the workpiece and four side surfaces adjacent to the grinding surface located on the opposite side of the annular base metal.
- the four ridges are chamfered, and the long side of the grinding surface is disposed along the outer periphery of the annular base metal, and the four ridges are formed on the grinding surface.
- a grinding wheel is provided in which a range of 1/5 or more of the short side length is chamfered.
- the height of the vitrified bond grindstone tip (hereinafter also simply referred to as the grindstone tip) (the length of the chamfered ridge portion) is increased, the grinding grindstone is damaged during grinding. Can be prevented. Therefore, the life of the grinding wheel can be extended by increasing the height of the grinding wheel tip. Moreover, it is possible to extremely effectively suppress severe damage to the workpiece due to excessive cutting into the center of the workpiece during workpiece grinding by simple molding.
- the length of the long side of the grinding surface can be at least 1/2 of the length of the chamfered ridge.
- the grinding wheel can be for double-head grinding.
- the grinding wheel of the present invention is suitable for double-head grinding.
- the grinding wheel can be prevented from being damaged during grinding. Life can be extended. Further, it is possible to extremely effectively suppress severe damage to the workpiece due to excessive cutting into the center of the workpiece by simple molding.
- the present invention is not limited to this.
- As described above as a method for extending the life of the grinding wheel, it is conceivable to increase the height of the grinding wheel tip. However, if it is simply increased, the grinding wheel will be damaged, or if it is molded into a rectangular parallelepiped, There was a problem that the center was severely damaged. Therefore, the inventor conducted various experiments paying attention to the shape of the grinding wheel tip for grinding and the arrangement on the annular base metal.
- the long side of the rectangular grinding surface is along the outer periphery of the annular base metal (that is, substantially parallel to the rotation direction of the grinding grindstone). By disposing it, it is possible to prevent the grinding wheel tip from being damaged during grinding.
- ridges having an inner angle of 90 ° when viewed from the height direction that is, four ridges between four side surfaces adjacent to a rectangular grinding surface in a rectangular parallelepiped grindstone chip.
- the center of the workpiece is prone to severe damage because the cutting load is perpendicular to the workpiece center and the movement load in the rotational direction increases.
- the present inventors have found that severe chamfering of the workpiece center can be suppressed by chamfering in the range of 1/5 or more of the side, and the present invention has been completed.
- FIG. 1 shows an example of a grinding wheel of the present invention. It is the front view seen from the side which contacts the work of grinding.
- FIG. 2 is a side view.
- the grinding wheel 1 of the present invention includes an annular base metal (hereinafter also simply referred to as a base metal) 2 and a plurality of vitrified bond grinding stone chips 3.
- the base metal 2 may be any material as long as the grindstone chip 3 can be disposed and can be rotated by a motor or the like during grinding. The rotation direction is indicated by R.
- Each of the grindstone chips 3 has a shape in which a part of a rectangular parallelepiped is chamfered.
- the chamfered state is simplified and drawn.
- the shape of the grindstone tip 3 will be described more specifically.
- a rectangular grinding surface 4 is provided at a position opposite to the side fixed to the base metal 2, and four rectangular side surfaces 5 adjacent to the grinding surface 4 are provided. The ridges between the adjacent side surfaces of these four side surfaces 5 are chamfered.
- the rectangular parallelepiped of the grinding wheel tip 3 and the rectangular grinding surface 4 mean the shapes of the grinding wheel tip 3 and the grinding surface 4 in a state before chamfering, respectively.
- the long side and short side of the rectangular grinding surface 4 here mean the long side and short side in the rectangular state before chamfering similarly.
- FIGS. 3 and 4 show the grindstone chip 3 viewed from the grinding surface 4 side.
- the four ridges 6 are chamfered.
- the chamfering amount in the present invention, it is sufficient that the chamfering is performed in a range of 1/5 or more of the length of the short side 7 of the rectangular grinding surface 4 (refer to the solid line arrow in FIG. 3) per ridge.
- FIG. 3 shows an example in which 1/5 of the length of the short side 7 is chamfered per ridge, and the grinding surface 4 is octagonal.
- FIG. 4 shows an example in which the chamfering is performed with a half of the length of the short side 7 per one ridge, which is a hexagon.
- the chamfering is performed as described above, it is possible to prevent the workpiece center from being severely damaged without excessively cutting the center of the workpiece during workpiece grinding. Moreover, since it is only necessary to chamfer, molding is also easy. On the other hand, if the chamfering amount is less than 1/5 of the length of the short side 7, the excessive cutting cannot be effectively prevented, and the work is damaged.
- the arrangement of the cuboidal grindstone tips 3 is also devised.
- the plurality of grindstone chips 3 are arranged along the outer periphery of the base metal 2.
- the number of arrangement is not particularly limited and can be determined as appropriate.
- the long side 8 of the grinding surface 4 is arranged along the outer periphery of the base metal 2. That is, since the long side 8 is arranged so as to be substantially parallel to the rotation direction of the grinding wheel 1, it can withstand bending stress when grinding the workpiece, and the grinding wheel tip 3 is damaged. Can be effectively prevented.
- the height of the grinding wheel tip is increased in order to extend the life of the grinding wheel, it was damaged due to the bending stress.
- the arrangement method is devised and it has resistance to the bending stress. Therefore, the height of the grindstone tip 3 can be increased while preventing breakage, and the life of the grinding wheel 1 is extended. Is also possible.
- the height 9 of the grindstone chip 3 refers to the length of the ridge portion that is chamfered as shown in FIG.
- the length of the long side 8 of the grinding surface 4 is 1/2 or more of the height 9 of the grindstone tip 3. Is. The longer the long side 8 of the grinding surface 4 is, the higher the resistance to the bending stress is.
- a grinding apparatus provided with the grinding wheel 1 of the present invention will be described.
- a double-head grinding apparatus will be described, but the grinding wheel 1 of the present invention is not limited to that for a double-head grinding apparatus. Any grinding device can be used as long as it can grind the workpiece with the grinding wheel tip 3 while rotating the grinding wheel 1 itself.
- FIG. 5 shows an example of the double-head grinding apparatus 10.
- the double-head grinding apparatus 10 mainly includes a pair of grinding wheels 1, a carrier 12 that can rotate from the outer peripheral side along the radial direction of the workpiece 11, and a holder portion 13 to which the carrier 12 is attached. is there.
- a carrier 12 that can rotate from the outer peripheral side along the radial direction of the workpiece 11, and a holder portion 13 to which the carrier 12 is attached. is there.
- both surfaces of the workpiece 11 can be ground simultaneously.
- the grinding wheel tip 3 is not damaged, and the center portion of the work 11 can be ground with high quality without being severely damaged.
- Example 1 and 2 Comparative Examples 1 and 2
- a double-sided grinding of a silicon wafer having a diameter of 300 mm was performed using a double-sided grinding apparatus 10 as shown in FIG. This silicon wafer is cut out from an ingot manufactured by the CZ method (Czochralski method).
- a double-head grinding apparatus 10 as shown in FIG. 5 is equipped with a grinding wheel having a plurality of vitrified bond grinding stone chips having a C-chamfered area 1/5 of the short side of the grinding surface shown in FIG. Five silicon wafers were ground (Example 1).
- a grinding wheel with a plurality of vitrified bond grinding wheel chips each having a C-chamfered area half the short side of the grinding surface shown in FIG. 4 is applied to a double-head grinding apparatus 10 as shown in FIG. 5 silicon wafers were ground (Example 2).
- the grinding wheel with a plurality of non-chamfered vitrified bond grinding stone chips shown in FIG. 6 is provided in a double-head grinding apparatus similar to that shown in FIG.
- the shapes of the grindstone tips in Examples 1 and 2 and Comparative Examples 1 and 2 described above are 10 mm in height, 5 mm in length of the long side substantially parallel to the rotation direction, and 3 mm in length of the short side. is there. During grinding, the grindstone tips were not damaged in any of Examples 1 and 2 and Comparative Examples 1 and 2.
- the warp shape of the silicon wafer after grinding and the amount of change ( ⁇ Bow) in bow (size and orientation of warpage) before and after grinding can be used as indices.
- the warp shape at the center after grinding (within a radius of about 50 mm) has a sharp convex or concave shape, severe damage has occurred on either the front or back surface, and the balance of the residual stress associated therewith is apparent. You can see that it has collapsed on the back side. Further, by ⁇ Bow, the damage of the front and back surfaces due to grinding and the balance of the residual stress accompanying it can be evaluated as numerical values.
- ⁇ Bow approaches 0 as the damage on the front and back surfaces and the residual stress accompanying them are the same on the front and back surfaces.
- SBW-330 manufactured by Kobelco Kaken Co., Ltd. was used for measuring the Warp shape and Bow. Note that ⁇ Bow is preferably ⁇ 5 ⁇ m or more and +5 ⁇ m or less.
- FIG. 8-11 shows the Warp shape after grinding the silicon wafer in the shape of the grindstone chips of Examples 1 and 2 and Comparative Examples 1 and 2, respectively.
- Examples 1 and 2 a sharp Warp shape change in the center is not seen, but in Comparative Examples 1 and 2, a sharp convexity is seen in the center, and severe damage occurs on either the front or back surface. It can be seen that the balance of residual stress is broken on the front and back surfaces.
- the C-chamfered region is set to 1/5 or more of the short side of the rectangular grinding surface as in Examples 1 and 2 in which the present invention is implemented. It can be seen that severe damage can be suppressed. On the other hand, in Comparative Examples 1 and 2 in which the present invention is not implemented, severe damage occurs at the center of the wafer surface, and the Warp shape and Bow are adversely affected.
- the present invention is not limited to the above embodiment.
- the above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.
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Abstract
Description
また、簡単な成型で、ワーク研削時のワーク中心部への過度な切り込みによるワークの激しい損傷を極めて効果的に抑えることが可能である。
前述したように、研削用砥石の寿命を延ばす方法として、砥石チップの高さ寸法を高くすることが考えられるが、単純に高くすると砥石が破損することや、直方体に成型すると研削対象のワークの中心部が激しく損傷するという問題が見られた。そこで、本発明者は、研削用の砥石チップの形状および円環状台金への配置に着目し、種々実験を行った。
また、直方体の砥石チップの場合、高さ方向から見て内角90°の稜部(すなわち、直方体の砥石チップにおいて、長方形の研削面に隣接する4つの側面同士の間の4つの稜部)がワーク中心に対して垂直に切り込む、かつ、回転方向に対する移動負荷が大きくなるため、ワークの中心部が激しく損傷し易くなるが、さらに実験を重ね、それらの稜部を、長方形の研削面の短辺の1/5以上の範囲でC面取りすることで、上記のワーク中心部の激しい損傷を抑えられることを見出し、本発明を完成させた。
図1に本発明の研削用砥石の一例を示す。研削対象のワークと接する側から見た正面図である。また、図2は側面図である。本発明の研削用砥石1は、円環状台金(以下、単に台金ともいう)2と、複数のビトリファイドボンド砥石チップ3とを備えている。
台金2は砥石チップ3を配置することができ、研削時にモーター等により回転させることができるものであれば良い。なお、回転方向をRで示している。
この砥石チップ3の形状についてより具体的に説明する。まず、台金2に固定される側とは反対の位置に長方形の研削面4を有しており、また該研削面4に隣接する4つの長方形の側面5を有している。これらの4つの側面5の、隣り合う側面同士間の稜部がC面取りされている。
面取り量に関して本発明では、1つの稜部あたり、長方形の研削面4の短辺7の長さ(図3の実線の矢印参照)の1/5以上の範囲でC面取りされていればよく、特に限定されない。図3は、1つの稜部あたり、短辺7の長さの1/5がC面取りされている例であり、研削面4が八角形になっている。一方、図4は、1つの稜部あたり、短辺7の長さの1/2でC面取りされている例であり、六角形になっている。
一方、面取り量が短辺7の長さの1/5未満であると、上記の過度な切り込みを効果的に防ぐことができず、ワークに損傷が生じてしまう。
キャリア12およびホルダー部13を自転させてワーク11を自転させつつ、一対の研削用砥石1を回転させることにより、ワーク11の両面を同時に研削することができる。本発明の研削用砥石1を用いることで、砥石チップ3が破損することもなく、かつ、ワーク11の中心部が激しく損傷することもなく品質高く研削することができる。
(実施例1、2、比較例1、2)
図5に示すような、ワークの両頭研削装置10を用いて、直径300mmのシリコンウェーハの両頭研削を行った。このシリコンウェーハは、CZ法(チョクラルスキー法)で製造されたインゴットから、切り出されたものである。
次に、図4に示す、C面取りの領域を研削面の短辺の1/2にした形状のビトリファイドボンド砥石チップを複数配置した研削用砥石を、図5に示すような両頭研削装置10に備え付け、シリコンウェーハを5枚研削した(実施例2)。
次に、図6に示す、面取りしていないビトリファイドボンド砥石チップを複数配置した研削用砥石を、図5に示すものと同様の両頭研削装置に備え付け、シリコンウェーハを5枚研削した(比較例1)。
最後に、図7に示す、C面取りの領域を研削面の短辺の1/8にした形状のビトリファイドボンド砥石チップを複数配置した研削用砥石を、図5に示すものと同様の両頭研削装置に備え付け、シリコンウェーハを5枚研削した(比較例2)。
研削時において、実施例1、2、比較例1、2のいずれも砥石チップが破損することはなかった。
しかしながら、この比較例3では、いずれも破損してしまい、シリコンウェーハの研削には至らなかった。
研削後の中心部(半径約50mmの範囲)のWarp形状が急激な凸や凹形状をしている場合、表裏面のどちらかで激しい損傷が起きており、それに付随する残留応力のバランスが表裏面で崩れていることがわかる。
また、ΔBowにより、研削による表裏面の損傷やそれに付随する残留応力のバランスを数値として評価できる。表裏面の損傷やそれらに付随する残留応力が表裏面で等しいほど、ΔBowは0に近づく。
Warp形状やBowの測定には、SBW-330(株式会社コベルコ科研製)を使用した。
なお、ΔBowとしては、-5μm以上+5μm以下であることが好ましい。
実施例1、2では、中心部の急激なWarp形状の変化は見られないが、比較例1、2では中心部で急激な凸化が見られ、表裏面のどちらかで激しい損傷が起き、残留応力のバランスが表裏面で崩れていることがわかる。
エラーバーは偏差を示している。実施例1は、ΔBow=0.17μm、実施例2は、ΔBow=0.57μmであり、どちらも良好であった。一方、比較例1は、ΔBow=5.39μm、比較例2は、ΔBow=5.10μmで、残留応力のバランスが表裏面で崩れていることがわかる。
Claims (3)
- 円環状台金の外周にビトリファイドボンド砥石チップが複数配置されており、前記円環状台金を回転させながら前記砥石チップでワークを研削する研削用砥石であって、
前記ビトリファイドボンド砥石チップは、
前記円環状台金の反対側に位置して前記ワークを研削する長方形の研削面と該研削面に隣接する4つの側面を有する直方体において、前記側面同士間の4つの稜部がC面取りされているものであり、
前記研削面の長辺が前記円環状台金の外周に沿うようにして配置されており、
前記4つの稜部は、前記研削面の短辺の長さの1/5以上の範囲がC面取りされているものであることを特徴とする研削用砥石。 - 前記研削面の長辺の長さは、前記C面取りされている稜部の長さの1/2以上であることを特徴とする請求項1に記載の研削用砥石。
- 前記研削用砥石は、両頭研削用のものであることを特徴とする請求項1または請求項2に記載の研削用砥石。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020177032500A KR102285111B1 (ko) | 2015-05-11 | 2016-03-11 | 연삭용 지석 |
US15/570,643 US10456891B2 (en) | 2015-05-11 | 2016-03-11 | Grinding wheel |
CN201680024410.7A CN107530867B (zh) | 2015-05-11 | 2016-03-11 | 研磨用磨石 |
DE112016001798.7T DE112016001798T5 (de) | 2015-05-11 | 2016-03-11 | Schleifscheibe |
SG11201709068RA SG11201709068RA (en) | 2015-05-11 | 2016-03-11 | Grinding wheel |
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JP2015096632A JP6350384B2 (ja) | 2015-05-11 | 2015-05-11 | 研削用砥石 |
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JP (1) | JP6350384B2 (ja) |
KR (1) | KR102285111B1 (ja) |
CN (1) | CN107530867B (ja) |
DE (1) | DE112016001798T5 (ja) |
SG (1) | SG11201709068RA (ja) |
TW (1) | TWI684494B (ja) |
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JP7115850B2 (ja) * | 2017-12-28 | 2022-08-09 | 株式会社ディスコ | 被加工物の加工方法および加工装置 |
CN110561272A (zh) * | 2019-10-23 | 2019-12-13 | 无锡市兰天金刚石有限责任公司 | 一种修整砂轮用超硬工具及其制备方法 |
JP7429203B2 (ja) * | 2021-03-16 | 2024-02-07 | 株式会社日立インダストリアルプロダクツ | 回転機のメンテナンス装置及びメンテナンス方法 |
TW202245033A (zh) * | 2021-04-27 | 2022-11-16 | 環球晶圓股份有限公司 | 具有凸多邊形磨料構件的雙面研磨裝置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002001671A (ja) * | 2000-06-19 | 2002-01-08 | Mitsubishi Materials Corp | 研削砥石およびその製造方法 |
US20020102920A1 (en) * | 2001-01-26 | 2002-08-01 | Wafer Solutions, Inc. | Eccentric abrasive wheel for wafer processing |
JP2003062740A (ja) * | 2001-08-22 | 2003-03-05 | Shin Etsu Handotai Co Ltd | 鏡面ウェーハの製造方法 |
JP2006224201A (ja) * | 2005-02-15 | 2006-08-31 | Disco Abrasive Syst Ltd | 研削ホイール |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT339169B (de) * | 1975-09-25 | 1977-10-10 | Voest Ag | Verfahren zum reinigen austenitischer werkstoffoberflachen, insbesondere von ferritischen kontaminationen |
US4947591A (en) * | 1990-01-09 | 1990-08-14 | Avonite, Inc. | Dry paint stripping method |
CA2090139C (en) * | 1992-03-05 | 2006-01-24 | Roger Grondin | Glass material for treating hard surfaces, comprising particles of broken glass, and a process for making said particles |
US5243790A (en) * | 1992-06-25 | 1993-09-14 | Abrasifs Vega, Inc. | Abrasive member |
US5308404A (en) * | 1993-01-21 | 1994-05-03 | Church & Dwight Co., Inc. | Less aggressive blast media formed from compacted particles |
US5607480A (en) * | 1993-11-10 | 1997-03-04 | Implant Innovations, Inc. | Surgically implantable prosthetic devices |
US5637030A (en) * | 1994-02-17 | 1997-06-10 | Minerals Research & Recovery, Inc. | Abrasive formulation for waterjet cutting and method employing same |
JP3683353B2 (ja) | 1996-01-10 | 2005-08-17 | 豊田バンモップス株式会社 | セグメント型砥石 |
US5964644A (en) * | 1996-03-01 | 1999-10-12 | Extrude Hone Corporation | Abrasive jet stream polishing |
DE19640945A1 (de) * | 1996-10-04 | 1998-04-16 | Polygram Manufacturing & Distr | Verfahren und Vorrichtung zum mechanischen Entfernen einer Fremdstoffbeschichtung von einem Basismaterial |
US5865620A (en) * | 1997-06-12 | 1999-02-02 | Kreativ, Inc. | Abrasive dental composition and method for use |
JPH11156728A (ja) | 1997-12-02 | 1999-06-15 | Tokyo Diamond Kogu Seisakusho:Kk | ダイヤモンド砥石 |
US20030180537A1 (en) * | 1998-01-30 | 2003-09-25 | Black Diamond Granules, Inc. | Spheroidal particles and apparatus and process for producing same |
US20010023351A1 (en) * | 1999-12-01 | 2001-09-20 | Eilers George J. | Skin abrasion system and method |
JP4352588B2 (ja) * | 2000-06-19 | 2009-10-28 | 三菱マテリアル株式会社 | 研削砥石 |
US20060219825A1 (en) * | 2005-04-05 | 2006-10-05 | United Materials International | High pressure fluid/particle jet mixtures utilizing metallic particles |
JP4969118B2 (ja) * | 2006-03-15 | 2012-07-04 | 三菱重工業株式会社 | 成形体の前処理方法、接着物品及びその製造方法、並びに塗装物品及びその製造方法 |
JP4794602B2 (ja) | 2008-05-26 | 2011-10-19 | 株式会社ノリタケカンパニーリミテド | 砥石チップおよびこの砥石チップを使用した研削砥石 |
KR101220608B1 (ko) * | 2010-06-09 | 2013-01-10 | 주식회사 포스코 | 스케일 제거장치 |
US8758461B2 (en) * | 2010-12-31 | 2014-06-24 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive particles having particular shapes and methods of forming such particles |
CN202123406U (zh) * | 2011-06-16 | 2012-01-25 | 广州晶体科技有限公司 | 一种磨轮 |
US20130331015A1 (en) * | 2012-06-11 | 2013-12-12 | Goei Co., Ltd. | Cup type grinding wheel |
JP2016501737A (ja) * | 2012-12-31 | 2016-01-21 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | ブラスト加工媒体、並びにその製造方法及び使用方法 |
-
2015
- 2015-05-11 JP JP2015096632A patent/JP6350384B2/ja active Active
-
2016
- 2016-03-11 US US15/570,643 patent/US10456891B2/en active Active
- 2016-03-11 DE DE112016001798.7T patent/DE112016001798T5/de active Pending
- 2016-03-11 KR KR1020177032500A patent/KR102285111B1/ko active IP Right Grant
- 2016-03-11 SG SG11201709068RA patent/SG11201709068RA/en unknown
- 2016-03-11 WO PCT/JP2016/001362 patent/WO2016181594A1/ja active Application Filing
- 2016-03-11 CN CN201680024410.7A patent/CN107530867B/zh active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002001671A (ja) * | 2000-06-19 | 2002-01-08 | Mitsubishi Materials Corp | 研削砥石およびその製造方法 |
US20020102920A1 (en) * | 2001-01-26 | 2002-08-01 | Wafer Solutions, Inc. | Eccentric abrasive wheel for wafer processing |
JP2003062740A (ja) * | 2001-08-22 | 2003-03-05 | Shin Etsu Handotai Co Ltd | 鏡面ウェーハの製造方法 |
JP2006224201A (ja) * | 2005-02-15 | 2006-08-31 | Disco Abrasive Syst Ltd | 研削ホイール |
Also Published As
Publication number | Publication date |
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SG11201709068RA (en) | 2017-12-28 |
KR102285111B1 (ko) | 2021-08-04 |
TWI684494B (zh) | 2020-02-11 |
TW201639663A (zh) | 2016-11-16 |
KR20180006907A (ko) | 2018-01-19 |
DE112016001798T5 (de) | 2018-01-11 |
JP6350384B2 (ja) | 2018-07-04 |
US10456891B2 (en) | 2019-10-29 |
US20180290265A1 (en) | 2018-10-11 |
CN107530867B (zh) | 2019-08-13 |
CN107530867A (zh) | 2018-01-02 |
JP2016209963A (ja) | 2016-12-15 |
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