WO2016132671A1 - 封止用アクリル樹脂組成物とその硬化物、製造方法、その樹脂組成物を用いた半導体装置とその製造方法 - Google Patents
封止用アクリル樹脂組成物とその硬化物、製造方法、その樹脂組成物を用いた半導体装置とその製造方法 Download PDFInfo
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- WO2016132671A1 WO2016132671A1 PCT/JP2016/000232 JP2016000232W WO2016132671A1 WO 2016132671 A1 WO2016132671 A1 WO 2016132671A1 JP 2016000232 W JP2016000232 W JP 2016000232W WO 2016132671 A1 WO2016132671 A1 WO 2016132671A1
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- resin composition
- acrylic resin
- inorganic filler
- mass
- sealing
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- 239000004925 Acrylic resin Substances 0.000 title claims abstract description 87
- 229920000178 Acrylic resin Polymers 0.000 title claims abstract description 87
- 239000000203 mixture Substances 0.000 title claims abstract description 56
- 238000007789 sealing Methods 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims description 95
- 238000000034 method Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000011342 resin composition Substances 0.000 title description 125
- 239000011256 inorganic filler Substances 0.000 claims abstract description 153
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 153
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 91
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 59
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 57
- 150000001451 organic peroxides Chemical class 0.000 claims abstract description 18
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 45
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 21
- 239000003822 epoxy resin Substances 0.000 claims description 21
- 229920000647 polyepoxide Polymers 0.000 claims description 21
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 17
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 125000003700 epoxy group Chemical group 0.000 claims description 2
- 239000000047 product Substances 0.000 description 61
- 239000002245 particle Substances 0.000 description 46
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 44
- 238000012360 testing method Methods 0.000 description 27
- 238000010521 absorption reaction Methods 0.000 description 22
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 21
- 150000001875 compounds Chemical class 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 19
- 238000001179 sorption measurement Methods 0.000 description 18
- 229910000679 solder Inorganic materials 0.000 description 16
- 125000005641 methacryl group Chemical group 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 14
- 238000011156 evaluation Methods 0.000 description 12
- 239000004593 Epoxy Substances 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- -1 or the like Substances 0.000 description 10
- 229910000077 silane Inorganic materials 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- 239000012190 activator Substances 0.000 description 7
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 239000007822 coupling agent Substances 0.000 description 7
- 125000000524 functional group Chemical group 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 229930185605 Bisphenol Natural products 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 150000007524 organic acids Chemical class 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000003672 processing method Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 4
- 230000000274 adsorptive effect Effects 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000004898 kneading Methods 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- 125000003367 polycyclic group Chemical group 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- ZPQAUEDTKNBRNG-UHFFFAOYSA-N 2-methylprop-2-enoylsilicon Chemical compound CC(=C)C([Si])=O ZPQAUEDTKNBRNG-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 125000002252 acyl group Chemical group 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 125000005395 methacrylic acid group Chemical group 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- 0 *C(CC1C2)C(*)(*)C2C2C1C(*)(*)C1C(COC(C(*)=C)=O)C(COC(C(*)=C)=O)C2C1 Chemical compound *C(CC1C2)C(*)(*)C2C2C1C(*)(*)C1C(COC(C(*)=C)=O)C(COC(C(*)=C)=O)C2C1 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 2
- PUGOMSLRUSTQGV-UHFFFAOYSA-N 2,3-di(prop-2-enoyloxy)propyl prop-2-enoate Chemical compound C=CC(=O)OCC(OC(=O)C=C)COC(=O)C=C PUGOMSLRUSTQGV-UHFFFAOYSA-N 0.000 description 2
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 2
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical compound CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 description 2
- BQACOLQNOUYJCE-FYZZASKESA-N Abietic acid Natural products CC(C)C1=CC2=CC[C@]3(C)[C@](C)(CCC[C@@]3(C)C(=O)O)[C@H]2CC1 BQACOLQNOUYJCE-FYZZASKESA-N 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- RABVYVVNRHVXPJ-UHFFFAOYSA-N [3-(hydroxymethyl)-1-adamantyl]methanol Chemical compound C1C(C2)CC3CC1(CO)CC2(CO)C3 RABVYVVNRHVXPJ-UHFFFAOYSA-N 0.000 description 2
- VEBCLRKUSAGCDF-UHFFFAOYSA-N ac1mi23b Chemical compound C1C2C3C(COC(=O)C=C)CCC3C1C(COC(=O)C=C)C2 VEBCLRKUSAGCDF-UHFFFAOYSA-N 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000000113 methacrylic resin Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- JXCAHDJDIAQCJO-UHFFFAOYSA-N (1-tert-butylperoxy-2-ethylhexyl) hydrogen carbonate Chemical compound CCCCC(CC)C(OC(O)=O)OOC(C)(C)C JXCAHDJDIAQCJO-UHFFFAOYSA-N 0.000 description 1
- QEQBMZQFDDDTPN-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy benzenecarboperoxoate Chemical compound CC(C)(C)OOOC(=O)C1=CC=CC=C1 QEQBMZQFDDDTPN-UHFFFAOYSA-N 0.000 description 1
- YGGARCQQBAOLGB-UHFFFAOYSA-N (3-prop-2-enoyloxy-1-adamantyl) prop-2-enoate Chemical compound C1C(C2)CC3CC1(OC(=O)C=C)CC2(OC(=O)C=C)C3 YGGARCQQBAOLGB-UHFFFAOYSA-N 0.000 description 1
- CEGRHPCDLKAHJD-UHFFFAOYSA-N 1,1,1-propanetricarboxylic acid Chemical compound CCC(C(O)=O)(C(O)=O)C(O)=O CEGRHPCDLKAHJD-UHFFFAOYSA-N 0.000 description 1
- NNNLYDWXTKOQQX-UHFFFAOYSA-N 1,1-di(prop-2-enoyloxy)propyl prop-2-enoate Chemical compound C=CC(=O)OC(CC)(OC(=O)C=C)OC(=O)C=C NNNLYDWXTKOQQX-UHFFFAOYSA-N 0.000 description 1
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 1
- ALVZNPYWJMLXKV-UHFFFAOYSA-N 1,9-Nonanediol Chemical compound OCCCCCCCCCO ALVZNPYWJMLXKV-UHFFFAOYSA-N 0.000 description 1
- ZDQNWDNMNKSMHI-UHFFFAOYSA-N 1-[2-(2-prop-2-enoyloxypropoxy)propoxy]propan-2-yl prop-2-enoate Chemical compound C=CC(=O)OC(C)COC(C)COCC(C)OC(=O)C=C ZDQNWDNMNKSMHI-UHFFFAOYSA-N 0.000 description 1
- FCHGUOSEXNGSMK-UHFFFAOYSA-N 1-tert-butylperoxy-2,3-di(propan-2-yl)benzene Chemical compound CC(C)C1=CC=CC(OOC(C)(C)C)=C1C(C)C FCHGUOSEXNGSMK-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical group C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- ODBCKCWTWALFKM-UHFFFAOYSA-N 2,5-bis(tert-butylperoxy)-2,5-dimethylhex-3-yne Chemical compound CC(C)(C)OOC(C)(C)C#CC(C)(C)OOC(C)(C)C ODBCKCWTWALFKM-UHFFFAOYSA-N 0.000 description 1
- DMWVYCCGCQPJEA-UHFFFAOYSA-N 2,5-bis(tert-butylperoxy)-2,5-dimethylhexane Chemical compound CC(C)(C)OOC(C)(C)CCC(C)(C)OOC(C)(C)C DMWVYCCGCQPJEA-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- WFUUAJVRMXKBBI-UHFFFAOYSA-N 2-[1-(2-hydroxyethyl)cyclohexyl]ethanol Chemical compound OCCC1(CCO)CCCCC1 WFUUAJVRMXKBBI-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- NREFJJBCYMZUEK-UHFFFAOYSA-N 2-[2-[4-[2-[4-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]phenyl]propan-2-yl]phenoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound C1=CC(OCCOCCOC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OCCOCCOC(=O)C(C)=C)C=C1 NREFJJBCYMZUEK-UHFFFAOYSA-N 0.000 description 1
- HOZMLTCHTRHKRK-UHFFFAOYSA-N 2-methyl-1-silylprop-2-en-1-one Chemical group CC(=C)C([SiH3])=O HOZMLTCHTRHKRK-UHFFFAOYSA-N 0.000 description 1
- BIISIZOQPWZPPS-UHFFFAOYSA-N 2-tert-butylperoxypropan-2-ylbenzene Chemical compound CC(C)(C)OOC(C)(C)C1=CC=CC=C1 BIISIZOQPWZPPS-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- ZYUVGYBAPZYKSA-UHFFFAOYSA-N 5-(3-hydroxybutan-2-yl)-4-methylbenzene-1,3-diol Chemical compound CC(O)C(C)C1=CC(O)=CC(O)=C1C ZYUVGYBAPZYKSA-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 description 1
- YCCCTDWBNCWPAX-UHFFFAOYSA-N OC(=O)C=C.OC(=O)C=C.OC(=O)C1=CC=CC=C1C(O)=O Chemical class OC(=O)C=C.OC(=O)C=C.OC(=O)C1=CC=CC=C1C(O)=O YCCCTDWBNCWPAX-UHFFFAOYSA-N 0.000 description 1
- XQAVYBWWWZMURF-UHFFFAOYSA-N OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO XQAVYBWWWZMURF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- ORLQHILJRHBSAY-UHFFFAOYSA-N [1-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1(CO)CCCCC1 ORLQHILJRHBSAY-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical group C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- LWZDPKCUTBVCGX-UHFFFAOYSA-N [3-(2-methylprop-2-enoyloxy)-1-adamantyl] 2-methylprop-2-enoate Chemical compound C1C(C2)CC3CC1(OC(=O)C(=C)C)CC2(OC(=O)C(C)=C)C3 LWZDPKCUTBVCGX-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- AJMSOZJFRPDRKA-UHFFFAOYSA-N bicyclo[2.2.1]heptane hydroxymethyl prop-2-enoate Chemical compound C(C=C)(=O)OCO.C(C=C)(=O)OCO.C12CCC(CC1)C2 AJMSOZJFRPDRKA-UHFFFAOYSA-N 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 239000004643 cyanate ester Substances 0.000 description 1
- FWQJLFDJWHTPCJ-UHFFFAOYSA-N cyclodecane;methanol Chemical compound OC.OC.C1CCCCCCCCC1.C1CCCCCCCCC1.C1CCCCCCCCC1 FWQJLFDJWHTPCJ-UHFFFAOYSA-N 0.000 description 1
- PDXRQENMIVHKPI-UHFFFAOYSA-N cyclohexane-1,1-diol Chemical compound OC1(O)CCCCC1 PDXRQENMIVHKPI-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- NHADDZMCASKINP-HTRCEHHLSA-N decarboxydihydrocitrinin Natural products C1=C(O)C(C)=C2[C@H](C)[C@@H](C)OCC2=C1O NHADDZMCASKINP-HTRCEHHLSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- ZZXXBDPXXIDUBP-UHFFFAOYSA-N hydroxymethyl prop-2-enoate Chemical compound C(C=C)(=O)OCO.C(C=C)(=O)OCO ZZXXBDPXXIDUBP-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical group C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- UVZICZIVKIMRNE-UHFFFAOYSA-N thiodiacetic acid Chemical compound OC(=O)CSCC(O)=O UVZICZIVKIMRNE-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
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-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/14—Peroxides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5435—Silicon-containing compounds containing oxygen containing oxygen in a ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/08—Homopolymers or copolymers of acrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/10—Homopolymers or copolymers of methacrylic acid esters
-
- C—CHEMISTRY; METALLURGY
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2217—Oxides; Hydroxides of metals of magnesium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
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Definitions
- the present invention relates to an acrylic resin composition for sealing, a cured product thereof, a manufacturing method, a semiconductor device using the resin composition, and a manufacturing method thereof.
- the present invention mainly relates to an acrylic resin composition for sealing, a cured product thereof, and a manufacturing method that are suitable for sealing between a base material and a semiconductor chip by a pre-feed type underfilling.
- the present invention also relates to a method for manufacturing a semiconductor device that seals between a base material and a semiconductor chip by a pre-feeding type underfilling using the sealing acrylic resin composition, and the semiconductor device.
- the flip-chip type semiconductor chip has packages such as BGA (ball grid array), LGA (land grid array), and CSP (Chip size package).
- BGA ball grid array
- LGA laand grid array
- CSP Chip size package
- the present invention provides an acrylic resin composition for sealing, a production method thereof, and a cured product, which contains a thermosetting acrylic resin and an inorganic filler, and the cured product has not only thermal conductivity but also high moisture resistance. Furthermore, the present invention provides a method for manufacturing a highly moisture-reliable semiconductor device using this sealing acrylic resin composition and the semiconductor device.
- the sealing acrylic resin composition according to the present invention contains a liquid thermosetting acrylic resin, an organic peroxide, and an inorganic filler in the range of 50% by mass to 95% by mass.
- the inorganic filler is a silane having a total organic carbon content within a range of 0.1% by mass or more and 1.0% by mass or less before being mixed with at least one of a thermosetting acrylic resin and an organic peroxide.
- Coupling agent is bound. This silane coupling agent has an acrylic group.
- the cured product of the acrylic resin composition for sealing according to the present invention is a cured product of the above resin composition, and its thermal conductivity is in the range of 1.0 W / mK to 10 W / mK.
- an inorganic filler to which a silane coupling agent is bound within a range where the total organic carbon content is 0.1% by mass or more and 1.0% by mass or less.
- the inorganic filler is included in the range of 50% by mass to 95% by mass, and the silane coupling agent has an acrylic group.
- the semiconductor device includes a base material provided with conductor wiring, a semiconductor chip, and a cured product of the sealing acrylic resin composition.
- the semiconductor chip has bump electrodes, and is mounted face-down on the base so that the bump electrodes are electrically connected to the conductor wiring.
- cured material is filled into the clearance gap between a base material and a semiconductor chip.
- the above-described sealing acrylic resin composition is disposed on a base material provided with conductor wiring.
- a semiconductor chip having a bump electrode is disposed at a position on the substrate where the sealing acrylic resin composition is disposed, and a bump electrode is disposed on the conductor wiring.
- the acrylic resin composition for sealing is cured to form a cured product, and the bump electrode and the conductor wiring are melted by melting the bump electrode. Connect electrically.
- a sealing acrylic resin composition containing a thermosetting acrylic resin and an inorganic filler, the cured product of which has not only thermal conductivity but also high moisture resistance.
- a sealing acrylic resin composition Using this sealing acrylic resin composition, a semiconductor device having excellent heat dissipation and moisture resistance reliability can be manufactured.
- FIG. 1A is a schematic cross-sectional view showing a process for manufacturing a semiconductor device according to an embodiment of the present invention.
- FIG. 1B is a schematic cross-sectional view showing a step that follows the step shown in FIG. 1A.
- FIG. 1C is a schematic cross-sectional view showing a step that follows the step shown in FIG. 1B.
- FIG. 1D is a schematic cross-sectional view showing a step that follows the step shown in FIG. 1C.
- the sealing acrylic resin composition (hereinafter referred to as resin composition) according to the present embodiment contains a thermosetting acrylic resin, an organic peroxide, and an inorganic filler that are liquid at room temperature.
- the resin composition according to the present embodiment is suitable as an underfill or NCP (Non Conductive Polymer) in manufacturing a semiconductor device.
- NCP Non Conductive Polymer
- it is suitable for sealing between the base material and the semiconductor chip by underfilling using a pre-feed method (also referred to as a thermocompression bonding method).
- FIGS. 1A to 1D an example of a method of manufacturing the semiconductor device 1 according to the present embodiment by sealing between the base material 2 and the semiconductor chip 3 by pre-feeding underfilling. Will be explained.
- 1A to 1D are cross-sectional views showing a process for manufacturing the semiconductor device 1.
- the base material 2 is, for example, a mother board, a package board, or an interposer board.
- the base material 2 includes an insulating substrate made of glass epoxy, polyimide, polyester, ceramic, or the like, and a conductor wiring 21 made of a conductor such as copper formed on the surface thereof.
- the conductor wiring 21 includes, for example, an electrode pad 22.
- the semiconductor chip 3 is a flip chip type chip such as BGA, LGA, or CSP. Further, the semiconductor chip 3 may be a PoP (package on package) type chip.
- the semiconductor chip 3 has bump electrodes 33.
- the bump electrode 33 includes, for example, a copper pillar 31 and a solder bump 32 provided at the tip of the pillar 31.
- the solder bump 32 is made of lead-free solder having a melting point of 210 ° C. or higher.
- solder examples include Sn-3.5Ag (melting point 221 ° C.), Sn-2.5Ag-0.5Cu-1Bi (melting point 214 ° C.), Sn-0.7Cu (melting point 227 ° C.), Sn-3Ag -0.5Cu (melting point 217 ° C.).
- the semiconductor chip 3 is mounted face down on the substrate 2 using a flip chip bonder 50 having a bonding head 51 and a stage 52.
- a resin composition is disposed as an underfill 41 on the surface of the substrate 2 on which the conductor wiring 21 is provided.
- the method for arranging the resin composition include a method using a dispenser, a screen printing method, and an ink jet method. Note that the amount of the resin composition to be disposed on the substrate 2 is appropriately optimized according to the dimensions of the semiconductor chip 3.
- the substrate 2 is supported on the stage 52 and the semiconductor chip 3 is held on the bonding head 51.
- the bonding head 51 is moved toward the stage 52 as shown in FIG. 1B.
- the semiconductor chip 3 is arrange
- the semiconductor chip 3 is disposed in a state where the semiconductor chip 3 and the base material 2 are aligned so that the bump electrode 33 in the semiconductor chip 3 and the electrode pad 22 in the conductor wiring 21 of the base material 2 overlap.
- the bump electrode 33 and the resin composition are heated by heating the semiconductor chip 3 and the substrate 2 through the bonding head 51 and the stage 52.
- the solder bumps 32 are melted, whereby the bump electrodes 33 and the electrode pads 22 are electrically connected.
- cured material 42 is formed because a resin composition thermosets. Thereby, the space between the semiconductor chip 3 and the substrate 2 is sealed with the cured product 42.
- the semiconductor chip 3 is mounted on the base material 2.
- the semiconductor device 1 having the base material 2, the semiconductor chip 3 mounted face-down on the base material 2, and the cured product 42 that seals between the base material 2 and the semiconductor chip 3 is obtained. It is done.
- the heating temperature of the bump electrode 33 and the resin composition is appropriately set to a temperature exceeding the melting point of the solder bump 32 according to the composition of the solder bump 32 and the composition of the resin composition.
- the maximum heating temperature is, for example, in the range of 230 to 280 ° C.
- the heating time is appropriately set in consideration of the melting point of the solder bump 32, conditions of various equipment of the heating device, etc., but is preferably in the range of 3 to 20 seconds. In this case, the productivity of the semiconductor device 1 is particularly high. Furthermore, in this embodiment, even if the resin composition is cured in such a short time, the cured product 42 has high moisture resistance. For this reason, the semiconductor device 1 has high moisture resistance reliability.
- the resin composition according to the present embodiment can be applied to uses other than underfill.
- a resin composition may be applied as an adhesive for bonding the semiconductor chip 3 and the heat dissipation component.
- the gap between the substrate 2 and the semiconductor chip 3 is in the range of 5 to 150 ⁇ m and the interval between the adjacent bump electrodes 33 is 5 to 150 ⁇ m, excellent connection stability, Connection reliability and high heat dissipation are realized.
- the average particle size of the inorganic filler is in the range of 0.5 to 5.0 ⁇ m, high connection stability can be obtained even if the distance between the bump electrodes 33 is less than 60 ⁇ m or less than 50 ⁇ m.
- the semiconductor device 1 obtained in this embodiment has high moisture resistance reliability.
- a semiconductor device 1 that satisfies Level 2 or Level 2a (also referred to as MLv2aa) defined in IPC / JEDEC J-STD-20 MSL (Moisture Sensitivity Levels) Classifications.
- JEDEC is a semiconductor technology association, one of the organizations of EIA, and a trade association for standardization of semiconductor technology.
- thermosetting acrylic resin When a resin composition containing a thermosetting acrylic resin that is liquid at room temperature is thermally cured, voids are less likely to occur in the resulting cured product. This is considered to be because the viscosity of the resin composition increases at the initial stage when the thermosetting acrylic resin is cured by radical reaction. In particular, even when the resin composition is cured in a short time, voids are hardly generated in the cured product, and thus the productivity of the semiconductor device 1 can be improved.
- “liquid at normal temperature” means that the thermosetting acrylic resin has fluidity at 18 ° C. under atmospheric pressure. In particular, the thermosetting acrylic resin preferably has fluidity at any temperature within the range of 5 to 28 ° C. under atmospheric pressure.
- the viscosity is preferably 1000 Pa ⁇ s or less, more preferably 100 Pa ⁇ s or less, and 10 Pa ⁇ s or less.
- the viscosity of the thermosetting acrylic resin at 18 ° C. is higher than 1000 Pa ⁇ s, the viscosity of the resin composition after containing 50 mass or more of the inorganic filler may become too high.
- Organic peroxide is a radical polymerization initiator.
- the viscosity of the resin composition tends to increase quickly at an initial stage in the process of thermosetting the resin composition. For this reason, generation of voids is suppressed.
- the organic peroxide can advance the curing reaction sufficiently quickly. Therefore, the resin composition can be quickly cured, and the semiconductor chip 3 is difficult to peel from the cured product 42.
- the inorganic filler can improve the thermal conductivity of the cured product 42. Therefore, the heat generated from the semiconductor chip 3 is efficiently dissipated through the cured product 42. Moreover, the thermal expansion coefficient of the hardened
- An inorganic filler is contained in the range of 50 mass% or more and 95 mass% or less with respect to the whole resin composition. For this reason, the hardened
- the inorganic filler is particularly preferably 70% by mass or more, and more preferably 75% by mass or more.
- the inorganic filler is pretreated with a silane coupling agent.
- the silane coupling agent for treating the surface of the inorganic filler has an acrylic group.
- the acryl group may be an acryloyl group, an acrylyl group, an acyl group, or a methacryl group. That is, the silane coupling agent for treating the surface of the inorganic filler has one or more groups called an acryl group or an acryloyl group, an acrylyl group, an acyl group, and a methacryl group.
- the inorganic filler surface-treated with such a silane coupling agent is excellent in affinity with a liquid thermosetting acrylic resin and in chemical bonding properties.
- an adsorption layer containing organic carbon is formed on the surface of the inorganic filler.
- this adsorption layer preferably contains a thermosetting acrylic resin component that is partially compatible with or chemically bonded to the silane coupling agent.
- silane coupling agent which has the total organic carbon amount in the range of 0.1 mass% or more and 1.0 mass% or less is couple
- the resin composition contains the inorganic filler at a high concentration as described above, the cured product 42 has high thermal conductivity. Furthermore, since the inorganic filler is treated with the silane coupling agent and the total organic carbon content of the inorganic filler is 0.1% by mass or more, the inorganic filler particles are protected with the silane coupling agent. Furthermore, not only the adsorption of moisture to the inorganic filler is suppressed, but also fine cracks and voids are less likely to occur in the cured product 42, so that the cured product 42 is less likely to absorb moisture. Therefore, the cured product 42 has high moisture resistance, and the semiconductor device 1 having the cured product 42 has high moisture resistance reliability.
- the affinity between the inorganic filler and the thermosetting acrylic resin is good because the periphery of the particles of the inorganic filler is sufficiently covered with the silane coupling agent. Thereby, it is considered that peeling of the interface between the cured resin obtained by curing the thermosetting acrylic resin in the cured product 42 and the inorganic filler particles hardly occurs. Further, it is considered that even if the resin composition is cured in a short time, the dimensional change caused thereby is sufficiently relaxed by the silane coupling agent. Thereby, it is considered that cracks are less likely to occur in the cured resin and the particles.
- the viscosity of a resin composition may become high too much.
- the total organic carbon content of the inorganic filler is in the range of 0.1 mass% or more and 0.8 mass% or less.
- the total organic carbon content of the inorganic filler having no organic carbon component on the surface or the like is 0% by mass.
- the total organic carbon content of the inorganic filler surface-treated with the silane coupling agent can be measured in a powder state, that is, in a state before being mixed with at least one of a thermosetting acrylic resin and an organic peroxide.
- the total organic carbon content of the inorganic filler can be measured with a total organic carbon (TOC) measuring device.
- the total organic carbon content is preferably measured by a combustion oxidation method.
- the inorganic filler is first heated to oxidize the organic carbon in the silane coupling agent attached to the inorganic filler particles to generate carbon dioxide. The amount of generated carbon dioxide is measured, and the total amount of organic carbon is calculated based on the result.
- the combustion oxidation method is applied. It is preferable.
- the total organic carbon content in the inorganic filler after being added to the resin composition can be measured by isolating the inorganic filler from the resin composition using an ultrasonic cleaning technique.
- the total amount of organic carbon contained in the inorganic filler thus isolated from the resin composition is desirably 0.1% by mass or more, more preferably 0.13% by mass or more, and 0.15% by mass or more. More preferred.
- the total organic carbon amount in the isolated inorganic filler includes the carbon amount attributed to the acrylic resin component having affinity with a part of the silane coupling agent in addition to the carbon amount attributed to the silane coupling agent. May be. Even in that case, the total amount of organic carbon is desirably 0.1% by mass or more.
- the viscosity change of the resin composition with time may be large. In this case, cracks or peeling due to moisture absorption in the moisture resistance reliability after curing may occur.
- the adsorption layer that is firmly bonded at a ratio of 0.1% by mass or more as the total amount of organic carbon is formed of a silane coupling agent or the like having a high adsorption power.
- a silane coupling agent or the like having a high adsorption power.
- thermosetting acrylic resin will be described.
- the thermosetting acrylic resin preferably contains a compound having two or more (meth) acryloyl groups per molecule, and 2 to 6 ( It is more preferable to include a compound having a (meth) acryloyl group, and it is more preferable to include a compound having two (meth) acryloyl groups per molecule. Moreover, you may have 1 or more groups of an acryloyl group (acrylyl group, acrylic group), an acyl group, and a methacryl group.
- Examples of the compound having two (meth) acryloyl groups per molecule include ethylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate, and 1,6-hexanediol di (meth) acrylate.
- a reaction product of 1 mol of bisphenol A, bisphenol F or bisphenol AD and 2 mol of glycidyl acrylate 1 mol of bisphenol A, bisphenol F or 1 mol of bisphenol AD and glycidyl methacrylate 2
- reactants with moles 1 mol of bisphenol A, bisphenol F or 1 mol of bisphenol AD and glycidyl methacrylate 2
- Examples of compounds having two or more (meth) acryloyl groups per molecule include (meth) acrylates having a crosslinked polycyclic structure.
- examples of the compound having two or more (meth) acryloyl groups per molecule include a compound represented by the formula (I) and a compound represented by the formula (II). In this case, the heat resistance of the cured product 42 is particularly improved.
- each of R 1 and R 2 represents a hydrogen atom or a methyl group, a is 1 or 2, and b is 0 or 1.
- each of R 3 and R 4 represents a hydrogen atom or a methyl group
- X represents a hydrogen atom, a methyl group, a methylol group, an amino group, or a (meth) acryloyloxymethyl group
- c represents 0 Or it is 1.
- More specific examples of the (meth) acrylate having a crosslinked polycyclic structure include the following compounds.
- Examples of the compound having two or more (meth) acryloyl groups include di (meth) acrylate having a structure in which an alkylene oxide is added to a bisphenol skeleton.
- examples of the compound having two or more (meth) acryloyl groups include a compound represented by the formula (III) and a compound represented by the formula (IV). In this case, the adhesion between the cured product 42 of the resin composition, the semiconductor chip 3 and the substrate 2 is improved.
- R 5 represents hydrogen, a methyl group, or an ethyl group
- R 6 represents a divalent organic group
- each of m and n represents an integer of 1 to 20.
- di (meth) acrylates having a structure in which an alkylene oxide is added to a bisphenol skeleton include Aronix M-210 and M-211B (manufactured by Toagosei), NK ester ABE-300, and A-BPE.
- Aronix M-208 manufactured by Toagosei Co., Ltd.
- PO modified vinyl such as Denacol acrylate DA-250 (manufactured by Nagase Kasei) and Biscoat 540 (manufactured by Os
- epoxy (meth) acrylate is preferable.
- the resin composition contains an epoxy resin, the reactivity of the resin composition is improved and the heat resistance and adhesion of the cured product 42 are improved.
- Epoxy (meth) acrylate is an oligomer which is an addition reaction product of, for example, an epoxy resin and an unsaturated monobasic acid such as acrylic acid or methacrylic acid.
- the epoxy resin which is a raw material of epoxy (meth) acrylate contains a diglycidyl compound (bisphenol type epoxy resin).
- the glycidyl compound is obtained by condensation of bisphenols typified by bisphenols such as bisphenol A and bisphenol F and epihalohydrin.
- the epoxy resin may include an epoxy resin having a phenol skeleton.
- Examples of the epoxy resin having a phenol skeleton include polyvalent glycidyl ether. Specific examples thereof include phenol novolac type epoxy resins and cresol novolac type epoxy resins.
- Such an epoxy resin is obtained by condensation of phenol novolaks, which are a condensate of phenol or cresol, and an aldehyde typified by formalin, with an epihalohydrin.
- the epoxy resin may include an epoxy resin having a cyclohexyl ring.
- the epoxy (meth) acrylate preferably contains, for example, a bisphenol A type epoxy acrylate represented by the following formula (V). This is a solid or a liquid having a viscosity of 10 Pa ⁇ s or more at 25 ° C.
- n represents a positive integer.
- bisphenol A type epoxy acrylate examples include Denacol acrylate DA-250 (Nagase Kasei, 60 Pa ⁇ s at 25 ° C), Denacol acrylate DA-721 (Nagase Kasei, 100 Pa ⁇ s at 25 ° C), Lipoxy VR-60 (manufactured by Showa Polymer, solid at room temperature) and Lipoxy VR-77 (manufactured by Showa Polymer, 100 Pa ⁇ s at 25 ° C.).
- Examples of the compound having three or more (meth) acryloyl groups include pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol pentaacrylate, ethoxylated (3) trimethylolpropane triacrylate, and ethoxylated (6) trimethylol.
- thermosetting acrylic resin includes, for example, 10 to 50% by mass of a (meth) acrylate having a crosslinked polycyclic structure, 3 to 20% by mass of a di (meth) acrylate having a structure in which an alkylene oxide is added to a bisphenol skeleton, and 5-30% by weight of epoxy (meth) acrylate can be included.
- thermosetting acrylic resin may contain various vinyl monomers other than the above-described components, for example, a monofunctional vinyl monomer.
- the one minute half-life temperature of the organic peroxide is preferably in the range of 120 to 195 ° C, more preferably in the range of 150 to 190 ° C.
- the viscosity of the resin composition quickly increases to such an extent that the wettability between the solder bump electrode 33 and the conductor wiring 21 is not hindered in the initial stage in the process of thermosetting the resin composition. Thereby, the production
- organic peroxide examples include the following compounds. The following is shown together with the 1 minute half-life temperature.
- the organic peroxide is preferably in the range of 0.2 to 2 parts by mass with respect to 100 parts by mass of the thermosetting acrylic resin. In this case, the viscosity stability of the resin composition is good, and a decrease in adhesion can be suppressed.
- the inorganic filler contains, for example, one or more materials selected from the group consisting of silica powder, metal oxide, metal nitride, silicate, carbonate, and hydroxide.
- silica powder include fused silica such as fused spherical silica and fused crushed silica, synthetic silica, and crystalline silica.
- metal oxide include alumina and titanium oxide.
- An example of a metal nitride includes aluminum nitride.
- silicates include talc, fired clay, unfired clay, mica, glass.
- carbonates include calcium carbonate, magnesium carbonate, hydrotalcite.
- hydroxides include aluminum hydroxide, magnesium hydroxide, calcium hydroxide.
- the inorganic filler preferably contains a metal oxide or a metal nitride, and more preferably contains at least one of alumina, aluminum nitride, and magnesium oxide.
- the thermal conductivity of the cured product 42 is particularly high, and the heat dissipation of the semiconductor device 1 is particularly high.
- the surface treatment by the silane coupling agent to the inorganic filler particles becomes easy. For this reason, not only the heat conductivity of the cured product 42 but also the moisture resistance is further enhanced. It is particularly preferable if the inorganic filler contains alumina.
- the thermal conductivity of alumina is as high as 30 W / mK, the thermal conductivity of the cured product 42 and the heat dissipation of the semiconductor device 1 are very high. More preferably, the alumina content is in the range of 50 to 95% by mass, and even more preferably in the range of 70 to 95% by mass with respect to the entire resin composition.
- the shape of the inorganic filler is not particularly limited, such as a crushed shape, a needle shape, a scale shape, and a spherical shape.
- the inorganic filler is preferably spherical in order to improve the dispersibility of the inorganic filler in the resin composition and to control the viscosity of the resin composition.
- the inorganic filler preferably has an average particle size smaller than the dimension between the substrate 2 and the semiconductor chip 3 mounted on the substrate 2.
- the average particle size of the inorganic filler is preferably 10 ⁇ m or less, and if it is 5 ⁇ m or less. More preferably, it is 3.5 ⁇ m or less, more preferably 3 ⁇ m or less, and particularly preferably 2 ⁇ m or less.
- the average particle diameter is preferably 0.5 ⁇ m or more, and more preferably 0.7 ⁇ m or more.
- the average particle diameter is, for example, in the range of 0.5 to 5.0 ⁇ m, and may be in the range of 0.7 to 3.5 ⁇ m. In this embodiment, even if the average particle size of the inorganic filler is within such a range, the dispersibility of the inorganic filler in the resin composition and in the cured product 42 is good due to the action of the cyanate ester compound. .
- the average particle diameter in this Embodiment is a median diameter calculated from the result of the particle size distribution measurement by a laser beam diffraction method.
- the inorganic filler may contain two or more materials having different average particle diameters.
- the silane coupling agent applied to the surface treatment of the inorganic filler further has a functional group of at least one of a vinyl group and an epoxy group.
- a functional group of at least one of a vinyl group and an epoxy group it is easy to adjust the total organic carbon content of the inorganic filler, and an inorganic filler having a total organic carbon content in the range of 0.1% by mass or more and 1.0% by mass or less can be easily prepared.
- the silane coupling agent contains one or more components selected from the group consisting of acrylic silane, epoxy silane, vinyl silane, phenyl silane, and methacryl silane, for example.
- Treating the inorganic filler with a silane coupling agent contributes to improving the dispersibility of the inorganic filler in the resin composition and reducing the viscosity of the resin composition.
- the silane coupling agent contains at least one of acrylic silane and phenyl silane, or at least one of methacryl silane and phenyl silane, the viscosity of the resin composition is particularly low. This is considered to be because the phenyl group and the acrylic group or the methacryl group in the silane coupling agent enhance the compatibility between the silane coupling agent and the thermosetting acrylic resin.
- phenylsilane and methacrylsilane are also effective in forming a strong bond with the inorganic filler surface.
- the silane coupling agent that forms a strong bond with the surface of the inorganic filler is not easily detached by solvent cleaning or the like.
- the storage stability is excellent and the change in viscosity due to a change with time is small.
- a silane coupling agent having a methacryl group forms a strong bond with the surface of the inorganic filler, and further enhances the compatibility between the silane coupling agent and the thermosetting acrylic resin.
- the silane coupling agent having a methacryl group forms an adsorption layer having a strong bond with the surface of the inorganic filler and enhances the compatibility between the adsorption layer and the methacrylic resin.
- the adsorption layer containing a silane coupling agent having methacrylic acid may form an affinity layer containing a methacrylic resin on the surface of the adsorption layer. Such an affinity layer also functions as a kind of adsorption layer.
- hydroxy-terminated dimethylpolysiloxanes having silanol groups at both ends may hardly form a strong bond with the surface of the inorganic filler, and may be washed away relatively easily by solvent washing or the like.
- a resin composition is prepared by kneading such a silane coupling agent together with a thermosetting acrylic resin or the like, the storage stability of the resin composition may change, and the viscosity change due to aging may increase. .
- the compatibility between the silane coupling agent and the thermosetting acrylic resin is particularly high. Therefore, the viscosity of the resin composition may be particularly reduced. Furthermore, the silane coupling agent can exhibit the function as a coupling agent particularly effectively.
- obtaining a silane coupling agent having a total organic carbon amount greater than 70% by mass makes it difficult to design the silane coupling agent and increases the price. Therefore, it may not be practical.
- the total organic carbon content of the silane coupling agent itself is preferably in the range of 30% by mass to 70% by mass, particularly preferably in the range of 40% by mass to 60% by mass. .
- the resin composition may contain an activator as a flux.
- an activator as a flux.
- the oxide film on the surface of the solder in the semiconductor chip 3 is removed during reflow, and the electrical connection reliability between the semiconductor chip 3 and the substrate 2 is improved.
- the activator includes, for example, one or more components selected from the group consisting of organic acids, various amines and salts thereof.
- the activator is preferably an acidic flux. That is, the activator preferably contains an organic acid. In this case, the wettability between the bump electrode 33 and the conductor wiring 21 can be particularly improved.
- Organic acids include, for example, abietic acid, glutaric acid, succinic acid, malonic acid, oxalic acid, adipic acid, pimelic acid, suberic acid, azelaic acid, diglycolic acid, thiodiglycolic acid, phthalic acid, isophthalic acid, terephthalic acid And one or more compounds selected from the group consisting of propanetricarboxylic acid, citric acid, and tartaric acid.
- the organic acid preferably contains one or more compounds selected from the group consisting of abietic acid, glutaric acid, and oxalic acid.
- the activator is preferably in the range of 0.1% by mass to 20% by mass and more preferably in the range of 1% by mass to 10% by mass with respect to the entire resin composition.
- the activator particularly exhibits the flux activity, and the wettability between the solder and the conductor wiring 21 becomes particularly high. Furthermore, it can suppress that the active agent makes the hardened
- the resin composition may contain additives other than the above components within the range not impairing the effects of the present invention.
- the additive include an antifoaming agent, a leveling agent, a low stress agent, and a pigment.
- the resin composition does not contain a solvent.
- a mixture is prepared by blending components other than the inorganic filler of the resin composition simultaneously or separately.
- the mixture is agitated and mixed while performing heat treatment or cooling treatment as necessary.
- an inorganic filler is added to the mixture.
- the inorganic filler is treated with a silane coupling agent before being added to the mixture.
- the mixture is stirred and mixed again while performing heat treatment or cooling treatment as necessary.
- the resin composition can be prepared.
- a disper, a planetary mixer, a ball mill, a three roll, etc. can be used alone or in combination.
- you may mix an inorganic filler with a part component (for example, thermosetting acrylic resin) of a resin composition, and may mix another component (for example, organic peroxide) with this mixture.
- the viscosity of the resin composition measured using a B-type rotational viscometer under the conditions of 25 ° C. and a rotational speed of 50 rpm is 200 Pa ⁇ s or less.
- the viscosity is more preferably 100 Pa ⁇ s or less, and further preferably 60 Pa ⁇ s or less.
- the viscosity is preferably 1 Pa ⁇ s or more, more preferably 3 Pa ⁇ s or more, and even more preferably 5 Pa ⁇ s or more. In this case, when the resin composition is applied onto the substrate 2, the shape of the resin composition is stably held on the substrate 2.
- a viscosity exists in the range of 1 Pa * s or more and 200 Pa * s or less.
- the viscosity is more preferably in the range of 5 Pa ⁇ s to 100 Pa ⁇ s, and particularly preferably in the range of 5 Pa ⁇ s to 60 Pa ⁇ s.
- the viscosity or rheology of the resin composition is adjusted so that the viscosity measured at a rotational speed of 5 rpm is 2 to 4 times the viscosity measured at a rotational speed of 50 rpm, the application property of the resin composition is improved. Is particularly high.
- the viscosity of the resin composition as described above can be realized by adjusting the composition of the resin composition within the range described above.
- the thermal conductivity of the cured product 42 obtained by thermosetting the resin composition is 1.0 W / mK or more.
- the heat dissipation of the semiconductor device 1 having the cured product 42 is particularly high.
- Such a high thermal conductivity can be realized by adjusting the composition of the resin composition within the range described above.
- the higher the thermal conductivity of the cured product 42 the higher the heat dissipation of the semiconductor device 1.
- the viscosity of the resin composition increases. For example, when the viscosity exceeds 200 Pa ⁇ s, the applicability of the resin composition may be affected.
- a special material such as diamond powder is required. For this reason, it is preferable that the heat conductivity of the hardened
- a mixture is prepared by mix
- a liquid sealing acrylic resin composition is prepared by adding an inorganic filler to the mixture and further stirring and mixing.
- Thermosetting acrylic resin A tricyclodecane dimethanol diacrylate.
- Thermosetting acrylic resin B bisphenol A type epoxy acrylate.
- Peroxide Dicumyl peroxide.
- Epoxy resin bisphenol A type epoxy resin.
- Curing agent imidazole.
- Inorganic filler A Alumina particles having a total organic carbon content of 0.16% by mass and an average particle size of 3.5 ⁇ m treated with a silane coupling agent (methacrylic silane) having a methacryl group.
- Inorganic filler B Alumina particles having an average particle diameter of 3.5 ⁇ m that have not been subjected to a coupling agent treatment.
- Inorganic filler C Alumina particles treated with hydroxy-terminated dimethylpolysiloxane and having a total organic carbon content of 0.48% by mass and an average particle size of 3.5 ⁇ m.
- Inorganic filler D Alumina particles having a total organic carbon content of 0.40% by mass and an average particle size of 0.7 ⁇ m treated with a silane coupling agent (methacrylic silane) having a methacryl group.
- Inorganic filler E Alumina particles having an average particle diameter of 0.7 ⁇ m that are not treated with a coupling agent.
- Inorganic filler F Alumina particles treated with hydroxy-terminated dimethylpolysiloxane and having a total organic carbon content of 0.40 mass% and an average particle size of 0.7 ⁇ m.
- silane coupling treatment was performed as follows. First, a silane coupling agent containing an acrylic group as an organic functional group as a functional group is prepared. In inorganic filler A and inorganic filler D, a silane coupling agent (methacrylic silane) having a methacryl group was used. A silane coupling agent having a functional group may be used. The silane coupling agent having an acrylic group is formed on the surface of a previously prepared inorganic filler (for example, alumina particles having an average particle size of 0.7 ⁇ m or 3.5 ⁇ m) by a dry processing method or a wet processing method.
- a silane coupling agent having an acrylic group is formed on the surface of a previously prepared inorganic filler (for example, alumina particles having an average particle size of 0.7 ⁇ m or 3.5 ⁇ m) by a dry processing method or a wet processing method.
- a predetermined amount of an inorganic filler is charged into an apparatus such as a Henschel mixer, and a solution containing a silane coupling agent is dropped or sprayed onto the stirred inorganic filler. Thereafter, the mixture is sufficiently stirred and finally dried at 20 to 150 ° C. for 30 to 90 minutes.
- the silane coupling agent and the inorganic filler cause a chemical reaction, and the organic functional group containing an acrylic group contained in the silane coupling agent is oriented on the surface (outside) of the inorganic filler.
- an inorganic filler is dispersed in water or an alcohol solvent to form a slurry, and a solution containing a silane coupling agent is added to the slurry-like inorganic filler. These are sufficiently stirred and then filtered, and the inorganic filler treated with the silane coupling agent is taken out. Also in this wet processing method, drying is performed at 20 ° C. to 150 ° C. for 30 minutes to 90 minutes. However, if necessary, the inorganic filler may be pulverized with a ball mill or the like after drying.
- an aqueous or alcohol solvent can be used for the solution containing the silane coupling agent.
- Aqueous or alcoholic solvents are useful for reactions such as hydrolysis of silane coupling agents.
- the organic functional group becomes hydrophobic and the solubility in water at pH 7 (for example, pure water) may be lowered.
- the silane coupling agent can be dissolved relatively easily by adjusting the pH of water to pH 3.5 to 4.0 using an organic acid such as acetic acid, formic acid or lactic acid.
- the silane coupling agent is formed as an adsorption layer or a reaction layer on the surface of the inorganic filler.
- thermosetting acrylic resin contained in the resin composition may be subjected to affinity or chemical reaction on the surface of the inorganic filler on which the silane coupling agent is formed, using an acrylic group contained in the silane coupling agent.
- the “initial total organic carbon amount” of the inorganic filler is the total organic carbon amount in the inorganic filler in which the silane coupling agent is formed, and before kneading with the liquid thermosetting acrylic resin. It is a measurement result.
- the “total amount of organic carbon after ultrasonic cleaning” of the inorganic filler is a measurement result after the inorganic filler is isolated from the resin composition before curing by an ultrasonic cleaning method. That is, for example, the total organic carbon amount of the organic adsorption layer remaining as a residue on the surface of the inorganic filler after two to eight ultrasonic cleanings.
- an acrylic resin that is compatible with the silane coupling agent is included in addition to the silane coupling agent that has not been detached from the surface of the inorganic filler by ultrasonic cleaning or the like. It may be.
- the total organic carbon amount in the inorganic filler is measured using a Shimadzu total organic carbon meter TOL-LCPH + solid sample combustion apparatus SSA-5000A at a furnace temperature of 900 ° C. and a carrier gas amount of 400 mL / min.
- the calibration curve is prepared using 100 ⁇ L of 1% glycol aqueous solution. During measurement, a 100 mg sample is weighed on a sample board.
- the inorganic filler is isolated from the resin composition before curing as follows. First, a resin composition (1 g) is put in a test tube, immersed in about 3 mL of distilled chloroform, and ultrasonic waves are applied for 10 minutes. At this time, an ultrasonic wave having a frequency of 28 kHz and an output of 100 W is applied for 10 minutes using VS-100 manufactured by ASONE CORPORATION. Thereafter, the supernatant is removed by centrifugation. At this time, H-19FMR manufactured by Kokusan Co., Ltd. is used. The rotational speed is 3200 rpm, and centrifugal force is applied at 20 ° C. for 15 minutes. After the above operation is repeated 2 to 8 times, the inorganic filler is dried by natural standing.
- Viscosity evaluation The viscosity of the resin composition at a rotation speed of 50 rpm is measured at a temperature of 25 ° C. using a B-type viscosity measuring device (DV-II manufactured by Brookfield, used rotor diameter: 8.74 mm).
- the viscosity of the resin composition in the case of containing alumina treated with a silane coupling agent is 14 Pa ⁇ s in Example 1 in which 75 parts by mass of alumina is contained.
- the pressure is 37 to 49 Pa ⁇ s.
- the viscosity of the resin composition containing alumina not treated with the coupling agent is 30 Pa ⁇ s in Comparative Examples 1 and 2 containing 75 mass% of alumina.
- Comparative Examples 3 and 5 containing 80 parts by mass of alumina the values are 68 and 65 Pa ⁇ s, respectively.
- the viscosity is high in these.
- Comparative Examples 4 and 6 an inorganic filler treated with a silane coupling agent such that the residual component of the total organic carbon amount after 8 times ultrasonic cleaning is less than 0.1% by mass is used.
- alumina is 80 parts by mass as in Example 2, but the viscosity is 65 Pa ⁇ s, and the effect of lowering the viscosity is not sufficient.
- the resin composition is first heated from room temperature to 150 ° C. over 60 minutes, then maintained at 150 ° C. and heated for 2 hours, so that the disk shape has a diameter of 2 cm and a thickness of 1 mm.
- a test piece is prepared.
- the thermal diffusion coefficient ( ⁇ ) of this test piece is measured by a laser flash method (t1 / 2 method).
- heat conductivity is 1 W / m * K or more, it can be evaluated that it has the outstanding heat conductivity.
- the specific gravity S of the test piece is measured as follows, and this value is defined as the density ( ⁇ ).
- the surface of the test piece is smoothed by an appropriate method so that bubbles do not adhere when immersed in the liquid.
- the mass of the test piece is measured in air at 23 ⁇ 2 ° C. to the unit of 1 mg (W).
- This test piece is tied with a thin metal wire, immersed in distilled water of 23 ⁇ 2 ° C. in a beaker, and the other end of the metal wire is hung on a scale. In this state, the mass is measured to the unit of 1 mg (W 1 ).
- a test piece is removed from a metal wire, only a metal wire is suspended in distilled water, and mass is measured (w).
- the specific gravity S is calculated by the following formula.
- a test piece is prepared under the same conditions as in the case of the above-mentioned “thermal conductivity of cured product”.
- the test piece is heated at 180 ° C. for 12 hours and dried to remove residual moisture from the test piece.
- the weight of the test piece is measured.
- the test piece is left in a desiccator controlled at a temperature of 25 ° C. ⁇ 5 ° C. for 24 hours.
- the test piece is exposed to an atmosphere of 60 ° C. and 60% HR for 60 hours, and immediately after that, the weight of the test piece is measured.
- the moisture absorption rate of the test piece is calculated as follows.
- a semiconductor chip having a size of 7.3 mm ⁇ 7.3 mm ⁇ 0.15 mm, a pitch of bump electrodes of 50 ⁇ m, and a number of bump electrodes of 544 is prepared.
- the bump electrode in the semiconductor chip has a pillar and a solder bump, and the solder bump is made of lead-free solder (Sn-3.5Ag: melting point 221 ° C.).
- substrate which has the copper conductor wiring in which the rust preventive film by the preflux process was provided is prepared.
- the substrate is fixed on the stage of the flip chip bonder heated to 60-100 ° C.
- the resin composition is applied with a 3.0 to 4.0 mg dispenser.
- the amount of the resin composition may be optimized as appropriate depending on the dimensions of the semiconductor chip.
- the semiconductor chip is held by the bonding head of the flip chip bonder, and the bonding head is brought close to the stage while the bonding head is heated to 130 ° C.
- a semiconductor chip is arrange
- the bump electrodes of the semiconductor chip and the electrode pads of the base material are aligned so as to contact each other.
- the temperature of the bonding head may be appropriately set within a range of 100 to 160 ° C.
- the semiconductor chip is pressed against the substrate for 0.5 seconds.
- This time may be appropriately set within a range of 0.1 to 3 seconds.
- the temperature of the bonding head is increased to a maximum temperature of 260 ° C. over 1.5 seconds.
- the load may be set as appropriate within a range of 15 to 40 N, and the time required to raise the temperature may be set as appropriate within a range of 1 to 2.5 seconds.
- the maximum temperature reached may be appropriately set within the range of 220 to 280 ° C.
- the holding of the semiconductor chip by the bonding head is released, and the bonding head is separated from the stage.
- the time from the placement of the semiconductor chip on the substrate to the separation of the bonding head from the stage is about 4 seconds.
- the holding time at the highest temperature may be set as appropriate within a range of 0.5 to 5 seconds.
- the time from the placement of the semiconductor chip on the substrate to the separation of the bonding head from the stage is 1. It may be appropriately set within a range of 5 to 10 seconds.
- the semiconductor device manufactured as described above is exposed for 192 hours under conditions of 60 ° C. and 60% RH. Subsequently, the semiconductor device is passed through a reflow furnace three times with a temperature profile of a maximum temperature of 260 ° C. Subsequently, the presence or absence of cracks in the cured product of the resin composition and the presence or absence of peeling at the interface between the cured product and the semiconductor chip and the substrate are investigated using an ultrasonic flaw detector (SAT).
- SAT ultrasonic flaw detector
- the evaluation is “A” in both examples.
- the evaluation is “B”, and it is determined that a problem relating to moisture resistance reliability may occur.
- Void evaluation A semiconductor device is manufactured by the same method as in the case of the moisture absorption reflow test. The presence or absence of voids in the cured product in this semiconductor device is investigated using an ultrasonic flaw detector (SAT). As a result, the case where no void is recognized is evaluated as “A”, and the case where no void is recognized is evaluated as “B”.
- SAT ultrasonic flaw detector
- inorganic filler A treated with a silane coupling agent having a methacryl group is used.
- This inorganic filler is alumina particles having an average particle size of 3.5 ⁇ m, and the initial total organic carbon content before kneading as a resin composition is 0.16% by mass.
- the viscosity is as low as 14 to 37 Pa ⁇ s
- the coatability is as good as A to B
- the thermal conductivity of the cured product is excellent as 1.2 to 1.7 W / mK.
- the water absorption of the cured product is 0.4% to 0.6% by mass
- the evaluation of the moisture absorption reflow test is A
- the evaluation of the void is A.
- Comparative Example 1 of (Table 1) an epoxy resin is used instead of an acrylic resin.
- an epoxy resin it turns out that hardened
- Comparative Example 4 of (Table 1) inorganic filler C treated with hydroxy-terminated dimethylpolysiloxane is used.
- the initial total organic carbon content is as high as 0.40% by mass, the viscosity is high and the applicability is low.
- the moisture absorption rate of a solidified material is high and a subject may generate
- the inorganic filler C used in Comparative Example 4 is isolated from the resin composition, the total amount of organic carbon remaining on the surface of the inorganic filler C after 8 times ultrasonic cleaning is as small as 0.09% by mass.
- Examples 3 to 5 of (Table 2) a silane coupling agent having a methacryl group is used as the inorganic filler D.
- the total amount of organic carbon contained in the inorganic filler for producing the resin composition is 0.1% by mass or more, 1.0% by mass or less, further 0.21% by mass or more, and 0.0. If it is 91 mass% or less, it turns out that the moisture absorption rate of hardened
- ultrasonic cleaning was repeated twice, four times, and eight times in isolating the inorganic filler from the resin composition. However, the total organic carbon content hardly changes in each isolated inorganic filler. Accordingly, the ultrasonic cleaning may be substantially performed 2 to 4 times.
- the total organic carbon amount is the same as the initial value, and is A evaluation in the moisture absorption reflow test. Therefore, in Examples 3 to 5, it means that the adsorptive power between the inorganic filler body such as alumina particles and the silane coupling agent is extremely high. In order to increase the adsorptive power in this way, the adsorptive power between the inorganic filler body and the silane coupling agent is increased, and the affinity and chemical bond between the silane coupling agent and the liquid thermosetting resin (acrylic resin) are increased. It is useful to increase sex.
- the influence of the average particle size of the inorganic filler is also examined. As a result, when the average particle size of the inorganic filler is less than 0.5 ⁇ m, the viscosity of the resin composition tends to increase. If the average particle size of the inorganic filler is larger than 10 ⁇ m, the electrical connection stability between the semiconductor chip and the substrate may be affected when the semiconductor device is manufactured. On the other hand, if the average particle size of the inorganic filler is in the range of 0.5 ⁇ m or more and 10 ⁇ m or less, the inorganic filler is included in the range of 50% by mass or more and 95% by mass or less with respect to the entire resin composition. Even if it is, application
- the presence or absence of the coupling agent treatment in the inorganic filler and the total organic carbon content are also examined in detail.
- the total amount of organic carbon contained in the inorganic filler is less than 0.1% by mass, the effect of reducing the moisture absorption rate of the cured product may be affected.
- the total organic carbon amount in the inorganic filler which carried out the silane coupling process is more than 1.0 mass%, the viscosity of a resin composition may become high. Therefore, if the inorganic filler is treated with a silane coupling agent and the total organic carbon content is in the range of 0.1% by mass or more and 1.0% by mass or less, the moisture absorption rate of the cured product is 1.0. Less than mass%, high reliability in moisture absorption reflow.
- the average particle diameter of the inorganic filler is examined on the assumption that the total organic carbon content is in the range of 0.1% by mass or more and 1.0% by mass or less. As a result, the following knowledge has been obtained.
- the average particle size of the inorganic filler is less than 0.1 ⁇ m, the viscosity of the sealing acrylic resin composition increases even when the total organic carbon content is increased, and the inorganic filler in the sealing acrylic resin composition The dispersibility of the cured product is lowered, and the thermal conductivity of the cured product is hardly increased.
- the average particle size of the inorganic filler is preferably in the range of 0.1 ⁇ m or more and 5 ⁇ m or less.
- a low-viscosity resin composition is obtained by using alumina particles treated with a silane coupling agent having a methacryl group as an inorganic filler.
- a low-viscosity resin composition can also be obtained when an inorganic filler treated with a silane coupling agent having a phenyl group is used as the inorganic filler body. This is considered to be because the phenyl group and the methacryl group in the silane coupling agent enhance the compatibility between the silane coupling agent and the thermosetting acrylic resin.
- the content of the inorganic filler in the resin composition is also examined. As a result, it has been confirmed that the viscosity of the resin composition is low and workability is good and the cured product 42 has excellent thermal conductivity within a range of 50 parts by mass or more and 95 parts by mass or less. If the content is less than 50% by mass, the thermal conductivity of the cured product may be low. When the content is larger than 95% by mass, the viscosity of the resin composition is increased, which may affect workability.
- the viscosity of the resin composition is measured using a B-type rotational viscometer under the conditions of 25 ° C. and a rotational speed of 50 rpm. If this viscosity is in the range of 5 Pa ⁇ s or more and 100 Pa ⁇ s or less, the coating amount when applying the resin composition using a dispenser is stabilized. Moreover, the shape of the resin composition after application
- the inorganic filler in Examples 1 and 2 is alumina, but when the inorganic filler is silica, aluminum nitride, or magnesium oxide, a cured product having high moisture resistance and high thermal conductivity can be obtained. Have confirmed.
- the epoxy resin content is 0% by mass.
- thermosetting epoxy resin it is useful that the content of the epoxy contained in the resin composition is less than the content of the thermosetting acrylic resin.
- thermosetting acrylic resin composition according to the present invention is suitable for semiconductor sealing applications.
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Abstract
Description
まず各実施例及び比較例について、(表1)、(表2)に示す成分のうち、無機フィラー以外の成分を配合し、撹拌して混合することにより、混合物を調製する。この混合物に無機フィラーを加えてからさらに撹拌して混合することで、液状の封止用アクリル樹脂組成物を調製する。
熱硬化性アクリル樹脂A:トリシクロデカンジメタノールジアクリレート。
熱硬化性アクリル樹脂B:ビスフェノールA型エポキシアクリレート。
過酸化物:ジクミルパーオキサイド。
エポキシ樹脂:ビスフェノールA型エポキシ樹脂。
硬化剤:イミダゾール。
無機フィラーA:メタクリル基を有するシランカップリング剤(メタクリルシラン)で処理された、全有機炭素量0.16質量%、平均粒径3.5μmのアルミナ粒子。
無機フィラーB:カップリング剤処理が施されていない平均粒径3.5μmのアルミナ粒子。
無機フィラーC:ヒドロキシ末端ジメチルポリシロキサンで処理された、全有機炭素量0.48質量%、平均粒径3.5μmのアルミナ粒子。
無機フィラーD:メタクリル基を有するシランカップリング剤(メタクリルシラン)で処理された、全有機炭素量0.40質量%、平均粒径0.7μmのアルミナ粒子。
無機フィラーE:カップリング剤処理が施されていない平均粒径0.7μmのアルミナ粒子。
無機フィラーF:ヒドロキシ末端ジメチルポリシロキサンで処理された、全有機炭素量0.40質量%、平均粒径0.7μmのアルミナ粒子。
シランカップリング処理は、以下のように行なった。まず官能基にアクリル基を有機官能基として含有するシランカップリング剤を用意する。なお無機フィラーAや無機フィラーDでは、メタクリル基を有するシランカップリング剤(メタクリルシラン)を用いたが、アクリル基を有するシランカップリング剤や、アクリロイル基、アクリリル基、アシル基、メタクリル基を有機官能基として有するシランカップリング剤を用いてもよい。このアクリル基を有するシランカップリング剤を、予め準備した無機フィラー(例えば、平均粒径0.7μmや、3.5μmのアルミナ粒子)の表面に、乾式処理方法や湿式処理方法で形成する。
各実施例及び比較例の樹脂組成物を、次の試験で評価している。その結果を(表1)、(表2)に示す。各試験の詳細について説明する。
無機フィラーの「初期全有機炭素量」とは、シランカップリング剤が形成された無機フィラーにおける全有機炭素量であり、液状の熱硬化性アクリル樹脂と混練する前の測定結果である。
B型粘度測定装置(brookfield社製DV-II、使用ローター直径8.74mm)を用いて、温度25℃において、樹脂組成物の回転数50rpmにおける粘度を測定している。
エアーディスペンス装置(武蔵エンジニアリング社製)を用いて、ダブルクロスパターンを描くように樹脂組成物を塗装する。この場合、塗膜の形状の不良又は糸引き不良が発生した場合を「C」、不良が発生したがその程度が僅かである場合を「B」、このような不良が発生しなかった場合を「A」と評価している。なお、評価が「B」の場合は、塗布方法等を最適化することで、評価「A」を達成可能と考えられる。
樹脂組成物をまず室温から60分間かけて150℃まで昇温し、続いて150℃に維持して2時間加熱することで、直径2cm、厚み1mmの円盤状の試験片を作製する。この試験片の熱拡散係数(α)をレーザーフラッシュ法(t1/2法)で測定する。合わせて、比熱(Cp)をDSC法で測定し、密度(ρ)をJIS K6911準拠で測定する。これらの値から熱伝導率(=α×Cp×ρ)を算出した。なお、熱伝導率が1W/m・K以上である場合、優れた熱伝導性を有すると評価できる。
(表1)、(表2)に示すように、実施例1~5及び比較例1~6で得られた樹脂組成物の硬化物は、いずれも1(W/mK)以上の熱伝導率を有し、優れた熱伝導性を有する。
まず上記「硬化物の熱伝導性」の場合と同じ条件で、試験片を作製する。この試験片を180℃で12時間加熱し、乾燥することで試験片から残留水分を除去する。その直後に試験片の重量を測定する。続いて、試験片を25℃±5℃の温度に管理されたデシケータ内に24時間放置する。続いて、試験片を60℃、60%HRの雰囲気に60時間暴露し、その直後に試験片の重量を測定する。試験片の吸湿率は、下記のように算出している。
この結果、実施例1~5での吸湿率は0.4%~0.6%であり、比較例1~6の0.9%~1.3%と比べて低い。この傾向は無機フィラーの平均粒径が3.5μmの場合も、0.7μmの場合も、同様である。
7.3mm×7.3mm×0.15mmの大きさを有し、バンプ電極のピッチが50μm、バンプ電極の数が544の半導体チップを用意する。半導体チップにおけるバンプ電極は、ピラーとハンダバンプとを有し、ハンダバンプは鉛フリーハンダ(Sn-3.5Ag:融点221℃)製である。基材としては、プリフラックス処理による防錆皮膜が設けられた銅製の導体配線を有するガラスエポキシ基板を準備する。
上記の吸湿リフロー試験の場合と同じ方法で、半導体装置を作製する。この半導体装置における硬化物中のボイドの有無を、超音波探傷装置(SAT)を用いて調査している。その結果、ボイドが認められない場合を「A」、ボイドが認められない場合を「B」と評価している。
2 基材
3 半導体チップ
21 導体配線
22 電極パッド
31 ピラー
32 ハンダバンプ
33 バンプ電極
41 アンダーフィル
42 硬化物
50 フリップチップボンダー
51 ボンディングヘッド
52 ステージ
Claims (11)
- 液状の熱硬化性アクリル樹脂と、
有機過酸化物と、
50質量%以上、95質量%以下の範囲内の無機フィラーと、を含有し、
前記無機フィラーには、前記熱硬化性アクリル樹脂と前記有機過酸化物との少なくとも一方と混合される前に、全有機炭素量が0.1質量%以上、1.0質量%以下の範囲内でシランカップリング剤が結合しており、
前記シランカップリング剤は、アクリル基を有している、
封止用アクリル樹脂組成物。 - 前記熱硬化性アクリル樹脂の含有量より少ない含有量の熱硬化性エポキシ樹脂をさらに含む、
請求項1に記載の封止用アクリル樹脂組成物。 - 前記シランカップリング剤が、ビニル基、エポキシ基のいずれか一つ以上の基をさらに有する、
請求項1、2のいずれか一項に記載の封止用アクリル樹脂組成物。 - B型回転粘度計を用いて、25℃、回転数50rpmの条件で測定される粘度が5Pa・s以上、100Pa・s以下の範囲内である、
請求項1~3のいずれか一項に記載の封止用アクリル樹脂組成物。 - 前記無機フィラーが、アルミナ、窒化アルミニウム及び酸化マグネシウムからなる群から選択される一種以上の成分を含有する、
請求項1~4のいずれか一項に記載の封止用アクリル樹脂組成物。 - フラックスをさらに含有する、
請求項1~5のいずれか一項に記載の封止用アクリル樹脂組成物。 - 未硬化の前記封止用アクリル樹脂組成物から超音波洗浄によって単離された前記無機フィラーに含まれる全有機炭素量は、0.1質量%以上である、
請求項1~6のいずれか一項に記載の封止用アクリル樹脂組成物。 - 請求項1~7のいずれか一項に記載の封止用アクリル樹脂組成物の熱硬化物であって、
1.0W/mK以上、10W/mK以下の範囲内の熱伝導率を有する、
封止用アクリル樹脂組成物の熱硬化物。 - 全有機炭素量が0.1質量%以上、1.0質量%以下の範囲内でシランカップリング剤が結合された無機フィラーを準備するステップと、
液状の熱硬化性アクリル樹脂と、有機過酸化物と、前記シランカップリング剤が形成された前記無機フィラーとを共存させるステップと、を備え、
前記無機フィラーは、50質量%以上、95質量%以下の範囲内で含まれ、
前記シランカップリング剤は、アクリル基を有している、
封止用アクリル樹脂組成物の製造方法。 - 導体配線が設けられた基材と、
バンプ電極を有し、前記バンプ電極が前記導体配線に電気的に接続するように前記基材にフェイスダウンで実装されている半導体チップと、
前記基材と前記半導体チップとの間の隙間に充填された、請求項1~7のいずれか一項に記載の封止用アクリル樹脂組成物の硬化物と、を備えた、
半導体装置。 - 導体配線が設けられた基材上に請求項1~7のいずれか一項に記載の封止用アクリル樹脂組成物を配置するステップと、
前記基材上の前記封止用アクリル樹脂組成物が配置されている位置に、バンプ電極を有する半導体チップを配置するとともに前記導体配線上に前記バンプ電極を配置するステップと、
前記封止用アクリル樹脂組成物および前記バンプ電極を加熱することで、前記封止用アクリル樹脂組成物を硬化させて硬化物を形成するとともに前記バンプ電極を融解させることで前記バンプ電極と前記導体配線とを電気的に接続するステップと、を備えた、
半導体装置の製造方法。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10341083A (ja) * | 1997-06-10 | 1998-12-22 | Hitachi Chem Co Ltd | 多層配線板 |
JPH11255864A (ja) * | 1998-03-09 | 1999-09-21 | Toshiba Corp | 液状エポキシ樹脂組成物および樹脂封止型半導体装置 |
JP2003176121A (ja) * | 2001-09-28 | 2003-06-24 | Nippon Shokubai Co Ltd | 焼成シリカ粒子およびその製造方法 |
JP2005200444A (ja) * | 2004-01-13 | 2005-07-28 | Sumitomo Bakelite Co Ltd | 熱硬化性液状封止樹脂組成物及びそれを用いた半導体装置 |
WO2012165012A1 (ja) * | 2011-05-27 | 2012-12-06 | 味の素株式会社 | 樹脂組成物 |
Family Cites Families (9)
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JP5303945B2 (ja) | 2008-02-05 | 2013-10-02 | 日本軽金属株式会社 | 水酸化アルミニウム混合粉体及びその製造方法 |
JP2010163598A (ja) | 2008-12-18 | 2010-07-29 | Panasonic Corp | プリプレグ及びその製造方法とこれを用いたプリント配線板 |
JP5621320B2 (ja) | 2010-05-19 | 2014-11-12 | デクセリアルズ株式会社 | 接続構造体の製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10341083A (ja) * | 1997-06-10 | 1998-12-22 | Hitachi Chem Co Ltd | 多層配線板 |
JPH11255864A (ja) * | 1998-03-09 | 1999-09-21 | Toshiba Corp | 液状エポキシ樹脂組成物および樹脂封止型半導体装置 |
JP2003176121A (ja) * | 2001-09-28 | 2003-06-24 | Nippon Shokubai Co Ltd | 焼成シリカ粒子およびその製造方法 |
JP2005200444A (ja) * | 2004-01-13 | 2005-07-28 | Sumitomo Bakelite Co Ltd | 熱硬化性液状封止樹脂組成物及びそれを用いた半導体装置 |
WO2012165012A1 (ja) * | 2011-05-27 | 2012-12-06 | 味の素株式会社 | 樹脂組成物 |
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