JP6706740B2 - 封止用アクリル樹脂組成物とその硬化物、製造方法、その樹脂組成物を用いた半導体装置とその製造方法 - Google Patents
封止用アクリル樹脂組成物とその硬化物、製造方法、その樹脂組成物を用いた半導体装置とその製造方法 Download PDFInfo
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- JP6706740B2 JP6706740B2 JP2017500316A JP2017500316A JP6706740B2 JP 6706740 B2 JP6706740 B2 JP 6706740B2 JP 2017500316 A JP2017500316 A JP 2017500316A JP 2017500316 A JP2017500316 A JP 2017500316A JP 6706740 B2 JP6706740 B2 JP 6706740B2
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Description
まず各実施例及び比較例について、(表1)、(表2)に示す成分のうち、無機フィラー以外の成分を配合し、撹拌して混合することにより、混合物を調製する。この混合物に無機フィラーを加えてからさらに撹拌して混合することで、液状の封止用アクリル樹脂組成物を調製する。
熱硬化性アクリル樹脂A:トリシクロデカンジメタノールジアクリレート。
熱硬化性アクリル樹脂B:ビスフェノールA型エポキシアクリレート。
過酸化物:ジクミルパーオキサイド。
エポキシ樹脂:ビスフェノールA型エポキシ樹脂。
硬化剤:イミダゾール。
無機フィラーA:メタクリル基を有するシランカップリング剤(メタクリルシラン)で処理された、全有機炭素量0.16質量%、平均粒径3.5μmのアルミナ粒子。
無機フィラーB:カップリング剤処理が施されていない平均粒径3.5μmのアルミナ粒子。
無機フィラーC:ヒドロキシ末端ジメチルポリシロキサンで処理された、全有機炭素量0.48質量%、平均粒径3.5μmのアルミナ粒子。
無機フィラーD:メタクリル基を有するシランカップリング剤(メタクリルシラン)で処理された、全有機炭素量0.40質量%、平均粒径0.7μmのアルミナ粒子。
無機フィラーE:カップリング剤処理が施されていない平均粒径0.7μmのアルミナ粒子。
無機フィラーF:ヒドロキシ末端ジメチルポリシロキサンで処理された、全有機炭素量0.40質量%、平均粒径0.7μmのアルミナ粒子。
シランカップリング処理は、以下のように行なった。まず官能基にアクリル基を有機官能基として含有するシランカップリング剤を用意する。なお無機フィラーAや無機フィラーDでは、メタクリル基を有するシランカップリング剤(メタクリルシラン)を用いたが、アクリル基を有するシランカップリング剤や、アクリロイル基、アクリリル基、アシル基、メタクリル基を有機官能基として有するシランカップリング剤を用いてもよい。このアクリル基を有するシランカップリング剤を、予め準備した無機フィラー(例えば、平均粒径0.7μmや、3.5μmのアルミナ粒子)の表面に、乾式処理方法や湿式処理方法で形成する。
各実施例及び比較例の樹脂組成物を、次の試験で評価している。その結果を(表1)、(表2)に示す。各試験の詳細について説明する。
無機フィラーの「初期全有機炭素量」とは、シランカップリング剤が形成された無機フィラーにおける全有機炭素量であり、液状の熱硬化性アクリル樹脂と混練する前の測定結果である。
B型粘度測定装置(brookfield社製DV−II、使用ローター直径8.74mm)を用いて、温度25℃において、樹脂組成物の回転数50rpmにおける粘度を測定している。
エアーディスペンス装置(武蔵エンジニアリング社製)を用いて、ダブルクロスパターンを描くように樹脂組成物を塗装する。この場合、塗膜の形状の不良又は糸引き不良が発生した場合を「C」、不良が発生したがその程度が僅かである場合を「B」、このような不良が発生しなかった場合を「A」と評価している。なお、評価が「B」の場合は、塗布方法等を最適化することで、評価「A」を達成可能と考えられる。
樹脂組成物をまず室温から60分間かけて150℃まで昇温し、続いて150℃に維持して2時間加熱することで、直径2cm、厚み1mmの円盤状の試験片を作製する。この試験片の熱拡散係数(α)をレーザーフラッシュ法(t1/2法)で測定する。合わせて、比熱(Cp)をDSC法で測定し、密度(ρ)をJIS K6911準拠で測定する。これらの値から熱伝導率(=α×Cp×ρ)を算出した。なお、熱伝導率が1W/m・K以上である場合、優れた熱伝導性を有すると評価できる。
(表1)、(表2)に示すように、実施例1〜5及び比較例1〜6で得られた樹脂組成物の硬化物は、いずれも1(W/mK)以上の熱伝導率を有し、優れた熱伝導性を有する。
まず上記「硬化物の熱伝導性」の場合と同じ条件で、試験片を作製する。この試験片を180℃で12時間加熱し、乾燥することで試験片から残留水分を除去する。その直後に試験片の重量を測定する。続いて、試験片を25℃±5℃の温度に管理されたデシケータ内に24時間放置する。続いて、試験片を60℃、60%RHの雰囲気に60時間暴露し、その直後に試験片の重量を測定する。試験片の吸湿率は、下記のように算出している。
この結果、実施例1〜5での吸湿率は0.4%〜0.6%であり、比較例1〜6の0.9%〜1.3%と比べて低い。この傾向は無機フィラーの平均粒径が3.5μmの場合も、0.7μmの場合も、同様である。
7.3mm×7.3mm×0.15mmの大きさを有し、バンプ電極のピッチが50μm、バンプ電極の数が544の半導体チップを用意する。半導体チップにおけるバンプ電極は、ピラーとハンダバンプとを有し、ハンダバンプは鉛フリーハンダ(Sn−3.5Ag:融点221℃)製である。基材としては、プリフラックス処理による防錆皮膜が設けられた銅製の導体配線を有するガラスエポキシ基板を準備する。
上記の吸湿リフロー試験の場合と同じ方法で、半導体装置を作製する。この半導体装置における硬化物中のボイドの有無を、超音波探傷装置(SAT)を用いて調査している。その結果、ボイドが認められない場合を「A」、ボイドが認められた場合を「B」と評価している。
2 基材
3 半導体チップ
21 導体配線
22 電極パッド
31 ピラー
32 ハンダバンプ
33 バンプ電極
41 アンダーフィル
42 硬化物
50 フリップチップボンダー
51 ボンディングヘッド
52 ステージ
Claims (11)
- 先供給方式のアンダーフィリングにより基材と半導体チップとの間を封止するのに用いる封止用アクリル樹脂組成物であって、
液状の熱硬化性アクリル樹脂と、
有機過酸化物と、
50質量%以上、95質量%以下の範囲内の無機フィラーと、を含有し、
前記無機フィラーには、全有機炭素量が0.1質量%以上、1.0質量%以下の範囲内でシランカップリング剤が結合しており、
前記シランカップリング剤は、アクリル基を有し、
前記無機フィラーが、アルミナである、
封止用アクリル樹脂組成物。 - 未硬化の前記封止用アクリル樹脂組成物から超音波洗浄によって単離された前記無機フィラーに含まれる全有機炭素量は、0.1質量%以上である、請求項1に記載の封止用アクリル樹脂組成物。
- 前記封止用アクリル樹脂組成物に対する熱硬化性エポキシ樹脂の含有率は0質量%である、請求項1、2のいずれか一項に記載の封止用アクリル樹脂組成物。
- 前記シランカップリング剤が、ビニル基、エポキシ基のいずれか一つ以上の基をさらに有する、
請求項1〜3のいずれか一項に記載の封止用アクリル樹脂組成物。 - B型回転粘度計を用いて、25℃、回転数50rpmの条件で測定される粘度が5Pa・s以上、100Pa・s以下の範囲内である、
請求項1〜4のいずれか一項に記載の封止用アクリル樹脂組成物。 - フラックスをさらに含有する、
請求項1〜5のいずれか一項に記載の封止用アクリル樹脂組成物。 - 前記熱硬化性アクリル樹脂は、架橋多環構造を有する(メタ)アクリレートを含む第1の熱硬化性アクリル樹脂と、エポキシ(メタ)アクリレートを含む第2の熱硬化性アクリル樹脂と、を含む、
請求項1〜6のいずれか一項に記載の封止用アクリル樹脂組成物。 - 請求項1〜7のいずれか一項に記載の封止用アクリル樹脂組成物の熱硬化物であって、
1.0W/mK以上、10W/mK以下の範囲内の熱伝導率を有する、
封止用アクリル樹脂組成物の熱硬化物。 - 先供給方式のアンダーフィリングにより基材と半導体チップとの間を封止するのに用いる封止用アクリル樹脂組成物の製造方法であって、
全有機炭素量が0.1質量%以上、1.0質量%以下の範囲内でシランカップリング剤が結合された無機フィラーを準備するステップと、
液状の熱硬化性アクリル樹脂と、有機過酸化物と、前記シランカップリング剤が形成された前記無機フィラーとを共存させるステップと、を備え、
前記無機フィラーは、50質量%以上、95質量%以下の範囲内で含まれ、
前記シランカップリング剤は、アクリル基を有し、
前記無機フィラーが、アルミナである、
封止用アクリル樹脂組成物の製造方法。 - 導体配線が設けられた基材と、
バンプ電極を有し、前記バンプ電極が前記導体配線に電気的に接続するように前記基材にフェイスダウンで実装されている半導体チップと、
前記基材と前記半導体チップとの間の隙間に充填された、請求項1〜7のいずれか一項に記載の封止用アクリル樹脂組成物の硬化物と、を備えた、
半導体装置。 - 導体配線が設けられた基材上に請求項1〜7のいずれか一項に記載の封止用アクリル樹脂組成物を配置するステップと、
前記基材上の前記封止用アクリル樹脂組成物が配置されている位置に、バンプ電極を有する半導体チップを配置するとともに前記導体配線上に前記バンプ電極を配置するステップと、
前記封止用アクリル樹脂組成物および前記バンプ電極を加熱することで、前記封止用アクリル樹脂組成物を硬化させて硬化物を形成するとともに前記バンプ電極を融解させることで前記バンプ電極と前記導体配線とを電気的に接続するステップと、を備えた、
半導体装置の製造方法。
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