WO2014045480A1 - Dispositif semi-conducteur et procédé de fabrication de dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur et procédé de fabrication de dispositif semi-conducteur Download PDF

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WO2014045480A1
WO2014045480A1 PCT/JP2013/002110 JP2013002110W WO2014045480A1 WO 2014045480 A1 WO2014045480 A1 WO 2014045480A1 JP 2013002110 W JP2013002110 W JP 2013002110W WO 2014045480 A1 WO2014045480 A1 WO 2014045480A1
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region
impurity concentration
implantation
electric field
semiconductor device
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English (en)
Japanese (ja)
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洪平 海老原
憲治 濱田
川上　剛史
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三菱電機株式会社
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Definitions

  • the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.
  • a depletion layer is formed in an active region that actively functions as a semiconductor element, and electric field concentration occurs at the boundary of the depletion layer, so that the breakdown voltage of the semiconductor device decreases. Therefore, by providing a termination region having a conductivity type opposite to the conductivity type of the semiconductor layer on the outer peripheral side of the active region, the depletion layer is expanded by the pn junction between the semiconductor layer and the termination region, and the electric field concentration is reduced. The breakdown voltage of the semiconductor device can be increased.
  • a JTE (Junction Termination Extension) structure having a plurality of implantation regions having different impurity concentrations is used, so that the semiconductor device moves toward the outer peripheral side.
  • the impurity concentration decreases stepwise, there has been a semiconductor device that can obtain a higher breakdown voltage than when using a JTE structure having a single injection region.
  • electric field concentration may still occur at the boundary between a plurality of injection regions and at the outer peripheral end of the injection region formed at the outermost periphery.
  • the impurity concentration in the outermost implantation region is relatively low.
  • the depletion layer does not sufficiently spread on the outer peripheral end side of the outer peripheral injection region, and as a result, the electric field concentration at the outer peripheral end portion of the outermost peripheral injection region cannot be sufficiently relaxed, and a sufficient breakdown voltage of the semiconductor device can be obtained. There was no problem.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor device having a termination region that can effectively alleviate electric field concentration.
  • a semiconductor device includes a semiconductor layer of a first conductivity type, a first small region formed on a part of the surface of the semiconductor layer and having a first impurity concentration of the second conductivity type and a second region.
  • a first electric field relaxation region in which a second small region having a conductivity type and a second impurity concentration lower than the first impurity concentration is alternately provided, and toward the outer peripheral side of the first electric field relaxation region.
  • a plurality of third small regions that are formed to surround the first electric field relaxation region and that are of the second conductivity type and have a third impurity concentration equal to or higher than the first impurity concentration and the second conductivity type of the second electric field relaxation region.
  • a second electric field relaxation region in which a plurality of fourth small regions having a fourth impurity concentration lower than the first impurity concentration are alternately provided.
  • the effective impurity concentration of the first electric field relaxation region is greater than the effective impurity concentration of the second electric field relaxation region provided on the outer peripheral side than the first electric field relaxation region. Therefore, the effective impurity concentration gradually decreases toward the outer peripheral side of the semiconductor device, and the electric field concentration at the boundary of each region can be mitigated. Further, since the impurity concentration of the third small region provided in the second electric field relaxation region on the outer peripheral side is higher than the impurity concentration of the first small region provided in the first electric field relaxation region, Since the depletion layer sufficiently spreads on the outer peripheral end side of the electric field relaxation region, electric field concentration on the outer peripheral end side of the electric field relaxation region can be more effectively relaxed.
  • Embodiment 1 the configuration of the Schottky diode 100 that is the semiconductor device according to the first embodiment of the present invention will be described.
  • the first conductivity type semiconductor is assumed to be an n-type semiconductor and the second conductivity type semiconductor is assumed to be a p-type semiconductor.
  • the present invention is not limited to this, and the first conductivity type semiconductor is assumed to be p-type.
  • the second conductivity type semiconductor may be an n-type semiconductor.
  • SiC silicon carbide
  • MOSFET Metal Oxide Field Effect Transistor
  • the inner side refers to the active region side that is the central portion side of the semiconductor device
  • the outer side refers to the termination region side that is the outer peripheral side of the semiconductor device.
  • FIG. 1 is a principal cross-sectional view showing a configuration of a Schottky diode 100 that is a semiconductor device according to the first embodiment of the present invention. Show.
  • an n-type semiconductor layer 1 is provided on a 4H—SiC semiconductor substrate (not shown), and a metal electrode 3 is provided on the surface of the semiconductor layer 1.
  • the semiconductor layer 1 includes an active region 50 that functions as an active element and a termination region 60 that is provided on the outer peripheral side of the active region 50 to maintain the breakdown voltage of the semiconductor device.
  • the termination region 60 surrounds the active region 50. Formed.
  • An insulating surface protection film (not shown) is formed on the termination region 60.
  • the p-type guard ring 2, the first electric field relaxation region 4, the connection region 10, and the second electric field relaxation region 5 are formed from the active region 50 side. Impurities are implanted so that the effective impurity concentration in the step changes stepwise.
  • the effective impurity concentration of the electric field relaxation region is the impurity concentration of the electric field relaxation region obtained by averaging the impurity concentration of each small region provided in the electric field relaxation region according to the area of each small region. .
  • the impurity concentration in each region is obtained by dividing the total amount of impurities in that region by the volume of each region.
  • the first electric field relaxation region 4 a plurality of second small regions 7 into which Al ions are implanted are alternately provided in the same manner as the first small region 6 into which Al ions that are p-type impurities are implanted. Yes.
  • the impurity concentration in the first small region 6 is the first impurity concentration
  • the impurity concentration in the second small region 7 is the second impurity concentration
  • the first impurity concentration is higher than the second impurity concentration. It is formed to become.
  • the first small region 6 and the second small region 7 occupy a certain region in the first electric field relaxation region 4 and are smaller than the first electric field relaxation region 4.
  • the third small region 8 into which Al ions are implanted and the fourth small region 9 into which Al ions are implanted are alternately arranged.
  • the third impurity concentration is equal to the first impurity concentration.
  • the fourth impurity concentration is formed to be lower than the first impurity concentration and the second impurity concentration. Further, the impurity concentration of each region is adjusted so that the first impurity concentration and the third impurity concentration are the sum of the second impurity concentration and the fourth impurity concentration.
  • Al ions are used as p-type impurities, but other p-type impurities such as boron may be used.
  • the p-type guard ring 2 provided inside the first electric field relaxation region 4 is formed from a single p-type region having a first impurity concentration equal to the impurity concentration of the first small region 6 already described.
  • a metal electrode 3 is provided on a part of the surface.
  • the connection region 10 provided between the first electric field relaxation region 4 and the second electric field relaxation region 5 is also a region formed from a single p-type region having the first impurity concentration. Yes.
  • the connection region 10 may be omitted, and the first electric field relaxation region 4 and the second electric field relaxation region 5 may be configured to contact each other.
  • FIG. 4 shows the impurity dose in each region in the termination region 60 of the Schottky diode 100 that is the semiconductor device according to the first embodiment of the present invention, and the first implantation region 12 and the second implantation region 13. It is a figure which shows a relationship.
  • the semiconductor layer 1 is formed on a semiconductor substrate (not shown), and the metal electrode 3 serving as a Schottky junction is disposed on the surface of the semiconductor layer 1.
  • the termination region 60 It is necessary to form the termination region 60 before installing the device.
  • An insulating surface protection film (not shown) is formed on the termination region 60 of the semiconductor layer 1.
  • the dose amount indicates the number of impurities doped per unit area.
  • the termination region 60 is formed by two implantation steps.
  • a region where impurities are implanted in the first implantation step which is the first implantation step
  • impurities are implanted in the second implantation step, which is the second implantation step.
  • the region is called the second implantation region 13
  • the termination region 60 is formed by combining the first implantation region 12 and the second implantation region 13.
  • the first injection region 12 and the second injection region 13 are partially overlapped.
  • a first implantation step is performed in which Al ions that are p-type impurities are implanted in the first implantation region 12.
  • the first implantation step is performed with the first implantation mask 11 a installed on the surface of the semiconductor layer 1.
  • the mask pattern of the first implantation mask 11a is such that the first implantation region 12 corresponding to the p-type guard ring 2, the first electric field relaxation region 4, and the third small region 8 is open, The shape covers the area.
  • the dose amount of the impurity implanted in the first implantation step is a dose amount at which the impurity concentration in the second small region 7 of the first implantation region 12 becomes the second impurity concentration.
  • the concentration distribution in the depth direction may be a box profile, a retrograde profile, or another profile.
  • a second implantation step is performed in which Al ions that are p-type impurities are implanted in the second implantation region 13.
  • the second implantation step is performed in a state where the second implantation mask 11 b is installed on the surface of the semiconductor layer 1.
  • the mask pattern of the second implantation mask 11b is such that the second implantation region 13 corresponding to the region of the p-type guard ring 2, the first small region 6, and the second electric field relaxation region 5 has an opening.
  • the shape covers the area.
  • the dose amount of the impurity implanted in the second implantation step is smaller than the dose amount implanted in the first implantation step.
  • pouring process may perform a 2nd process previously, and may perform a 1st injection
  • the region where the first implantation region 12 and the second implantation region 13 overlap that is, Al ions are produced by both the first implantation step and the second implantation step.
  • the implanted region becomes the p-type guard ring 2 having the first impurity concentration.
  • the region into which Al ions are implanted by both the first implantation step and the second implantation step becomes the first small region 6 having the first impurity concentration.
  • the region into which Al ions are implanted by only one implantation step becomes the second small region 7 having the second impurity concentration, and the first electric field relaxation region 4 is formed.
  • the region into which Al ions are implanted by both the first implantation step and the second implantation step has a third impurity concentration (first impurity concentration).
  • a region where the Al ions are implanted only by the second implantation step becomes the fourth small region 9 having the fourth impurity concentration, and the second electric field relaxation region 5 is formed.
  • the region into which Al ions are implanted by both the first implantation step and the second implantation step is the first impurity concentration.
  • the junction region 10 is formed.
  • the first impurity concentration and the third impurity concentration can be adjusted by changing the sum of the dose amounts of Al ions implanted in the first implantation step and the second implantation step.
  • the impurity concentration can be adjusted by changing the dose amount of Al ions implanted in the first implantation step, and the fourth impurity concentration changes the dose amount of Al ions implanted in the second implantation step. Can be adjusted.
  • connection region 10 is formed at the boundary between the first electric field relaxation region 4 and the second electric field relaxation region 5, but if the mask alignment accuracy is sufficiently ensured, the connection region 10 is reduced.
  • the first electric field relaxation region 4 and the second electric field relaxation region 5 may be directly connected by omitting the connection area 10.
  • the p-type guard ring 2 and the first electric field can be obtained by two implantation steps.
  • a termination region 60 composed of the relaxation region 4, the connection region 10, and the second electric field relaxation region 5 can be formed.
  • FIG. 5 is a diagram showing a simulation result regarding a change in potential distribution when a reverse voltage is applied stepwise to the Schottky diode 100 which is the semiconductor device according to the first embodiment of the present invention.
  • Each line in FIG. 5 represents an equipotential line in the semiconductor layer 1 of the Schottky diode 100, and simulation is performed when a low voltage, a medium voltage, and a high voltage are applied as reverse voltages of the Schottky diode 100 in order from the top.
  • Each result is shown.
  • the first small regions 6 having the first impurity concentration and the second small regions 7 having the second impurity concentration are alternately formed in the first electric field relaxation region 4.
  • the third small region 8 having a third impurity concentration equal to the first impurity concentration is lower than the second impurity concentration.
  • the fourth small regions 9 having the fourth impurity concentration are alternately formed, the effective impurity concentration in the first electric field relaxation region 4 is higher than the effective impurity concentration in the second electric field relaxation region 5.
  • the termination region 60 is formed so that the impurity concentration decreases toward the outside of the termination region 60. Therefore, as shown in FIG. 5, as the applied reverse voltage increases, the depletion layer gradually expands from the second electric field relaxation region 5 to the first electric field relaxation region 4 in the injection region. It can be seen that potential sharing is performed stepwise from the electric field relaxation region 5 to the first electric field relaxation region 4.
  • the effective impurity concentration of the second electric field relaxation region 5 provided outside the termination region 60 is lower than the effective impurity concentration of the first electric field relaxation region 4.
  • the impurity concentration of the third small region 8 provided in the electric field relaxation region 5 is the same as the impurity concentration of the first small region 6 provided in the first electric field relaxation region 4. Therefore, it can be seen that the depletion layer is sufficiently spread even outside the second electric field relaxation region 5. Therefore, according to the present embodiment, it is possible to more effectively alleviate electric field concentration at the outer peripheral edge of the boundary surface of each region and the outermost peripheral region into which impurities are implanted.
  • the p-type guard ring 2, the first electric field relaxation region 4, and the second electric field relaxation region 5 are formed by two implantation steps.
  • the termination region 60 including a plurality of regions having different impurity concentrations can be formed with a small number of manufacturing steps.
  • a third electric field relaxation region 17 and a fourth electric field relaxation region 19, which will be described later, and a single region consisting of the second impurity concentration or the fourth impurity concentration are added without increasing a new implantation step. It is also possible to increase the number of gradations of the impurity concentration in the termination region 60 by combining the regions, thereby increasing the breakdown voltage of the semiconductor device.
  • FIG. 6 shows a simulation result of the breakdown voltage of the Schottky diode 100 when the dose amount of the impurity implanted in each implantation step is changed.
  • the vertical axis represents the breakdown voltage of the semiconductor device
  • each bar graph represents the dose injected into the first implantation region 12 in the first implantation step and the second implantation region 13 in the second implantation step. The withstand voltage when the dose amount injected into the substrate is set to a specific dose amount is shown.
  • the dose amount of either the first implantation region 12 or the second implantation region 13 is 0.0 cm ⁇ 2, that is, only one of the first implantation step and the second implantation step is performed. Even when the termination region 60 is formed, a certain level of breakdown voltage is obtained. However, the doses of the first implantation region 12 and the second implantation region 13 are 1.4E + 13 cm ⁇ 2 or less, respectively. It can be seen that a high breakdown voltage semiconductor device can be obtained when the total dose of 12 and the second implantation region 13 is 1.2E + 13 to 2.4E + 13 cm ⁇ 2.
  • the dose amount of the first implantation region 12 is 1.0E + 13 cm ⁇ 2 or more and the dose amount of the second implantation region 13 is 1.0E + 13 cm ⁇ 2 or less, a semiconductor device having a breakdown voltage exceeding 1700 kV is obtained. It turns out that many are obtained.
  • the activation rate of impurities is not 100%, and it is hardly affected by the fixed charges trapped during the process, and the breakdown voltage as simulated is rarely obtained.
  • the dose amount actually implanted needs to be larger than the design value of the dose amount based on the simulation or the like, and in the case of 4H—SiC, it is about 6E + 12 cm ⁇ 2 larger than the design value.
  • the dose amounts of the first implantation region 12 and the second implantation region 13 are 2.0E + 13 cm ⁇ 2 or less, respectively. It is desirable to implant impurities in a range where the total dose of the implantation region 12 and the second implantation region 13 is in the range of 1.2E + 13 to 3.0E + 13 cm ⁇ 2.
  • the second impurity concentration that is the impurity concentration of the second small region 7 is set to be larger than the fourth impurity concentration that is the impurity concentration of the fourth small region.
  • the effective impurity concentration is reduced as it goes to improve the breakdown voltage.
  • the second impurity concentration may be made lower than the fourth impurity concentration.
  • FIG. 6 when the second impurity concentration is lower than the third impurity concentration, that is, when the impurity implanted in the first implantation step is less than the impurity implanted in the second implantation step.
  • the potential is shared stepwise from the first electric field relaxation region 4 having a low effective impurity concentration to the second electric field relaxation region 5 having a high effective impurity concentration, a relatively high breakdown voltage semiconductor device is manufactured. May be obtained.
  • the first small region 6 and the third small region 8 are configured to have the same impurity concentration.
  • the third impurity concentration that is the impurity concentration of the region 8 may be higher than the first impurity concentration that is the impurity concentration of the first small region 6.
  • a depletion layer spreads stepwise from the second electric field relaxation region 5 to the first electric field relaxation region 4, and potential sharing is performed stepwise from the second electric field relaxation region 5 to the first electric field relaxation region 4.
  • the depletion layer further spreads outside the second electric field relaxation region 5. Therefore, it is possible to more effectively alleviate the electric field concentration at the outer peripheral end of the boundary surface of each region and the outermost peripheral region where impurities are implanted without expanding the implantation region to the outer peripheral side.
  • the resist finishes smaller than a width of 1 ⁇ m, it will fall down, and the design is usually made to be slightly thicker than 1 ⁇ m in consideration of the possibility that the resist width shrinks due to excessive exposure.
  • the side surface has a taper as shown in FIG. 7, the implantation process can be performed without falling the resist even if the width is 1 ⁇ m.
  • FIG. 8 shows the result of simulating the shape of the p-type region when Al ions having a dose of 1E + 13 cm ⁇ 2 are implanted at 500 keV into an n ⁇ drift layer having an impurity concentration of 1E + 16 cm ⁇ 3 using a mask with an interval of 1 ⁇ m. is there. As shown in FIG.
  • the interval between the p-type regions is narrowed by about 0.4 ⁇ m, and an advantageous design for increasing the breakdown voltage is possible. Furthermore, when a resist with a tapered shape is used, impurities implanted through the resist also exist immediately below the tapered shape, and a higher concentration p-type region can be obtained compared to the case without a taper, thereby increasing the breakdown voltage. Become advantageous.
  • first electric field relaxation region 4 and second electric field relaxation region 5 are directly connected across connection region 10.
  • first electric field relaxation region 4 and the second electric field relaxation region 5 are directly connected without sandwiching the connection region 10 .
  • the first electric field relaxation region 4 and the second electric field relaxation region 5 are increased as the applied voltage is increased.
  • the electric potential sharing proceeds stepwise to the electric field relaxation region 5 and an effective electric field relaxation effect is obtained.
  • the width of each small region is constant in the first electric field relaxation region 4 and the second electric field relaxation region 5, but as shown in FIG.
  • the widths of the first small region 6 and the third small region 8 having a high impurity concentration are gradually decreased toward the outside of the termination region 60, so
  • the impurity concentration gradually decreases toward the outer peripheral side. Concentration can be relaxed, and a semiconductor device that achieves higher off-voltage can be obtained.
  • the plurality of spaced first small regions 6 can be formed by performing implantation so that the interval between the first small regions 6 changes toward the outer peripheral side.
  • the plurality of spaced second small regions 7 can be formed by performing implantation so that the distance between the small regions 7 changes toward the outer peripheral side.
  • the third small region 8 and the fourth small region 9 that is, each implantation region into which impurities are implanted in each implantation step changes the interval between a plurality of spaced regions in each implantation region. It can be formed by performing implantation so as to cause
  • the implantation depths of the first implantation region 12 and the second implantation region 13 are constant, but as shown in FIGS. 11 and 12, the first implantation region 12 and the second implantation region 12 are the same.
  • the implantation regions 13 may be formed so that the implantation depths thereof are different.
  • 11 shows a case where the implantation depth of the first implantation region 12 is made deeper
  • FIG. 12 shows a case where the implantation depth of the second implantation region 13 is made deeper.
  • the first implantation region 12 is implanted with an implantation energy of 200 to 500 keV
  • the second implantation region 13 is implanted with an implantation energy of 300 to 700 keV.
  • the implantation depth of the second implantation region 13 can be made deeper. In such a case, the depletion layer more easily spreads into the semiconductor layer 1 in the second implantation region 13 implanted deeper, which is advantageous for increasing the breakdown voltage.
  • the implantation depth of either the first implantation region 12 or the second implantation region 13 is preferably shallow.
  • the position of the surface of either the first implantation region 12 or the second implantation region 13 may be an n-type semiconductor.
  • the vertical Schottky diode 100 is described as an example.
  • the MOSFET 101 may have a vertical structure including the gate electrode 26, the field insulating film 27, the interlayer insulating film 28, and the like.
  • the surface of the entire termination region 60 may be an n-type semiconductor.
  • an n + region 70 that is an n-type impurity region that is deeper than the semiconductor layer 1 is provided by ion implantation or high-concentration epitaxial growth in the active region 50.
  • the n + region 70 may be formed on the entire surface of the semiconductor layer 1 without using an implantation mask or the like. Also in this case, since the impurity concentration of the first small region 6 and the third small region 8 is high, the depletion layer can be sufficiently expanded outside the implantation region, and the boundary surface and impurity of each region can be expanded. It is possible to effectively alleviate electric field concentration at the outer peripheral end of the outermost peripheral region into which is injected.
  • n + region 70 when such an n + region 70 is formed in a Schottky diode, it is possible to reduce the resistance during forward conduction, but the breakdown voltage may be reduced due to electric field concentration near the surface of the semiconductor layer 1.
  • JBS Junction Barrier Schottky
  • the JBS region 29 is preferably formed at the same time.
  • FIG. 17 shows the JBS when the JBS region 29 is formed simultaneously with the formation of the first implantation region 12.
  • the active region 50 has a low resistance due to the effect of the n + region 70 and maintains a breakdown voltage in the JBS region 29, and the impurity concentration of the first small region 6 and the third small region 8 in the termination region 60. Therefore, the depletion layer can be sufficiently expanded outside the implantation region, and the electric field concentration at the outer peripheral edge of the boundary surface of each region and the outermost region where impurities are implanted is effectively reduced. be able to.
  • n + region 80 which is an n-type impurity region deeper than the semiconductor layer 1 is formed to the same depth as the p base region 15.
  • the n + region 80 may be formed on the entire surface of the semiconductor layer 1 without using an implantation mask in the MOSFET 101 or the like as shown in FIG.
  • the impurity concentration of the first small region 6 and the third small region 8 is high, the depletion layer can be sufficiently expanded outside the implantation region, and the boundary surface and impurity of each region can be expanded. It is possible to effectively alleviate electric field concentration at the outer peripheral end of the outermost peripheral region into which is injected.
  • the third electric field relaxation region 17 is formed by providing a plurality of fifth small regions 16 having the second impurity concentration apart from each other outside the second electric field relaxation region 5. It is good as well. In such a case, the electric field concentration is further relaxed, and a higher breakdown voltage semiconductor device can be obtained.
  • the termination region 60 shown in FIG. 19 is formed by expanding the first injection region 12 to the outer peripheral side and performing the first injection step. Therefore, it is not necessary to add a new implantation step in order to form the third electric field relaxation region 17.
  • a connection region 10 in which the first injection region 12 and the second injection region 13 are newly overlapped is formed at the boundary between the second electric field relaxation region 5 and the third electric field relaxation region 17.
  • the connection region 10 is reduced in area, or the connection region 10 is omitted and the second electric field relaxation region 5 and the third electric field relaxation region 17 are directly connected. May be.
  • the impurity concentration in the fifth small region 16 may be the first impurity concentration or the fourth impurity concentration, as shown in FIG. 21 or FIG. Good.
  • the impurity concentration of the fifth small region 16 when the impurity concentration of the fifth small region 16 is set to the fourth impurity concentration, the second injection region 13 is expanded to the outer peripheral side and the second injection step is performed to perform the fifth small region. Region 16 is formed.
  • the impurity concentration of the fifth small region 16 is the first impurity concentration
  • the first injection region 12 and the second injection region 13 are expanded, and the third electric field relaxation region 17.
  • the fifth small region 16 is formed by performing each implantation step so that the first implantation region 12 and the second implantation region 13 overlap.
  • the adjacent second electric field relaxation region 5 and third electric field relaxation region 17 are both formed from the second implantation region, that is, the second implantation mask. Therefore, it is not necessary to consider the accuracy of alignment of the implantation mask. As a result, the connection area 10 can be omitted.
  • the impurity concentration of the fifth small region 16 becomes the first impurity concentration, and the impurity concentration of the fifth small region 16 corresponding to the outermost periphery of the termination region 60.
  • the depletion layer expands on the outer peripheral side of the termination region 60, and the electric field concentration can be effectively reduced.
  • the adjacent second electric field relaxation region 5 and third electric field relaxation region 17 are formed from the first implantation region 12 and the second implantation region 13, respectively, that is, the first implantation mask 11a and the second implantation region 13 are formed. Since each is different from the implantation mask 11b, the alignment accuracy of the implantation mask becomes a problem. Therefore, it is effective to provide the connection region 10. However, when the alignment accuracy of the implantation mask is sufficiently ensured, the connection region 10 may be reduced in area or omitted.
  • the first implantation mask 11a and the second implantation mask 11b are overlaid.
  • either one of the first implantation region 12 and the second implantation region 13 in the portion forming the fifth small region 16 is formed.
  • the width should be wider than the other.
  • FIG. 23 shows a case where the width of the second implantation region 13 is wider than the width of the first implantation region 12.
  • a fifth electric field relaxation region 21 may be formed by forming a plurality of seventh small regions 20 on the outer periphery of the fourth electric field relaxation region 19. Even in such a case, the sixth small region 18 and the seventh small region 20 can be formed by expanding the first injection region 12 and the second injection region 13 to the outer peripheral side, There is no need to add a new injection step.
  • the present invention has been described for the case where the semiconductor substrate is made of SiC, it can also be applied to other semiconductor substrates such as silicon (Si).
  • the impurity concentration of each electric field relaxation region is an effective concentration of the impurity concentration in two small regions, the width of each small region is made finer to form a finer structure.
  • the electric field concentration at the boundary surface of each region can be more effectively mitigated.
  • thermal diffusion of impurities becomes a problem.
  • SiC has less thermal diffusion of impurities than other semiconductors such as Si, so that a finer structure is required in a semiconductor device made of SiC. It is possible to form an electric field relaxation region having, and a remarkable effect is obtained in the relaxation of electric field concentration.
  • Embodiment 2 the semiconductor device including the termination region 60 that can be formed by two implantation steps has been described. However, the present invention is not limited thereto, and the termination region is formed by three implantation steps. It is good also as providing.
  • a semiconductor device according to the second embodiment a Schottky diode 102 including a termination region 60 formed by three injection processes will be described. Note that in the semiconductor device according to the second embodiment, description of the same or corresponding parts as those of the semiconductor device according to the first embodiment will be omitted, and different parts will be described.
  • FIG. 26 is a cross-sectional view of a principal part showing a Schottky diode 102 which is a semiconductor device according to the second embodiment.
  • FIG. 27 is a diagram illustrating a dose amount in a termination region of the semiconductor device according to the second embodiment and each implantation step. It is a figure which shows an injection
  • a metal electrode 3 serving as a Schottky junction is formed on the surface corresponding to the active region 50 of the n ⁇ type semiconductor layer 1 formed on a semiconductor substrate (not shown). ing.
  • the metal electrode 3 it is necessary to form a termination region 60 for electric field relaxation in advance.
  • the p-type electric field relaxation regions having different impurity concentrations are formed by three implantation steps having different dose amounts.
  • the first implantation region 12 into which impurities are implanted in the first implantation process, the second implantation region 13 into which impurities are implanted in the second implantation process, and the third Many electric field relaxation regions having different impurity concentrations can be formed by combining the third implantation regions 22 into which impurities are implanted in the implantation step. Therefore, different types of electric field relaxation regions that can be formed from three implantation steps are shown below.
  • An electric field relaxation region (electric field relaxation region 30A) composed of a small region having an impurity concentration determined by a combined dose amount of 12 and the dose amount of the second implantation region 13 A small region having an impurity concentration determined by a combined dose amount of the dose amount of the first implantation region 12, the dose amount of the second implantation region 13, and the dose amount of the third implantation region 22, and the first implantation region
  • An electric field relaxation region (electric field relaxation region 30B) consisting of a small region having an impurity concentration determined by the total dose amount of 12 and the dose amount of the third implantation region 22 A small region having an impurity concentration determined by the combined dose amount of the first implantation region 12, the second implantation region 13, and the third implantation region 22, and the second implantation region
  • An electric field relaxation region / first region composed of a small region with an impurity concentration determined by the combined dose amount and the dose amount of the third implantation region 22 and a small region with an impurity concentration determined by the dose amount of the first implantation region 12.
  • Impurity concentration determined by dose A small region having an impurity concentration determined by the combined amount of the dose amount of the first implantation region 12, the dose amount of the second implantation region 13, and the dose amount of the third implantation region 22.
  • Electric field relaxation region and the dose amount of the first implantation region 12 and the dose amount of the second implantation region 13 which are composed of a low impurity concentration region determined by the dose amount of the third implantation region 22 are determined.
  • Electric field relaxation region (electric field relaxation region 30C) composed of a small region of impurity concentration and a small region of impurity concentration determined by the dose amount of the first implantation region 12 A small impurity concentration region determined by the combined dose amount of the first implantation region 12 and the second implantation region 13 and a small impurity concentration determined by the dose amount of the second implantation region 13
  • a small region having an impurity concentration determined by a combined dose amount of the third implantation region 22 and the dose amount of the second implantation region 13 and the electric field relaxation region composed of a small region having an impurity concentration determined by Low electric field concentration region determined by the sum of the dose amount of the electric field relaxation region / second injection region 13 and the dose amount of the third injection region 12, which is a region having a small impurity concentration determined by the dose amount of the injection region 13.
  • Area and third Field relaxation region made from a small region of an impurity concentration which is determined by the dose of the implanted region 22 (the electric field relaxation region 30E) Electric field relaxation region having an impurity concentration determined by the dose amount of the first implantation region 12 Electric field relaxation region having an impurity concentration determined by the dose amount of the second implantation region 13 Impurity concentration determined by the dose amount of the third implantation region 22 Electric field relaxation region (electric field relaxation region 30F) An electric field relaxation region having an impurity concentration determined by the combined dose amount of the first implantation region 12 and the dose amount of the second implantation region 13A dose amount of the first implantation region 12 and the third implantation region Electric field relaxation region having an impurity concentration determined by the combined dose amount of 22 and an electric field having an impurity concentration determined by the combined dose amount of 22 and an electric field having an impurity concentration determined by the combined dose amount of the second implanted region 13 and the dose amount of the second implanted region 13 Relaxation region / electric field relaxation region having an impurity concentration determined by the combined
  • the electric field relaxation regions share the potential in order from the region with the lower impurity concentration as the applied voltage increases. To do. Thereby, since the electric field concentration is effectively reduced toward the outer periphery of the termination region, a high breakdown voltage semiconductor device can be obtained.
  • the Schottky diode 102 which is a semiconductor device according to the second embodiment has the above-described 19th combination by combining the first implantation region 12, the second implantation region 13, and the third implantation region 22.
  • the terminal region 60 includes six electric field relaxation regions 30A to 30F selected from the types of electric field relaxation regions. With such a configuration, since the electric field relaxation region is formed so that the impurity concentration decreases toward the outer peripheral side of the termination region 60, the potential sharing is stepwise in order from the outer electric field relaxation region as the applied voltage increases. The electric field concentration can be reduced.
  • a high breakdown voltage semiconductor device can be obtained.
  • six types of electric field relaxation regions can be formed from three implantation steps, and the number of gradations in the electric field relaxation region can be increased while suppressing an increase in manufacturing steps. Thus, it becomes possible to manufacture a semiconductor device with a high breakdown voltage.
  • each electric field relaxation region the width of each implantation region is the same, but as shown in FIG. 28, the width of the small region in each different electric field relaxation region is gradually changed toward the outer peripheral side of the termination region.
  • electric field concentration can be more effectively mitigated, and a high breakdown voltage semiconductor device can be obtained.
  • the implantation depths of the first implantation region 12, the second implantation region 13, and the third implantation region 22 are the same depth. However, as shown in FIG. The injection depth may be different. In this case, in the deeply implanted region, the depletion layer is more likely to spread to the semiconductor layer 1, which is advantageous for increasing the breakdown voltage.
  • impurities are usually distributed so as to have a concentration peak in the depth direction, and the impurity concentration on the surface of the implantation region is slightly reduced. In order to prevent breakage at the end of the metal electrode 3, it is advisable to ensure a certain level of surface impurity concentration immediately below the end of the metal electrode 3, and as shown in FIG. It is better to keep the implantation depth shallow. In FIG. 29, the first implantation region is deepest, the second implantation region 13 is deep, and the third implantation region 22 is shallowest.
  • the surface of any of the first implantation region 12, the second implantation region 13, and the third implantation region 22 may be an n-type semiconductor.
  • the surface of the second implantation region is illustrated as an n-type semiconductor.
  • a vertical structure Schottky diode is taken as an example.
  • the surface may be an n-type semiconductor.
  • the embodiments can be freely combined within the scope of the invention, and the embodiments can be appropriately modified or omitted.

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Abstract

L'invention concerne un dispositif semi-conducteur qui comprend une région terminale où une concentration de champ électrique peut être relâchée de manière efficace. Ce dispositif semi-conducteur comprend : une couche de semi-conducteur à premier type de conductivité ; une première région de relaxation de champ électrique, qui est formée sur une partie de la surface de la couche de semi-conducteur, et qui comprend de manière alternée des premières petites régions à second type de conductivité ayant une première concentration en impureté, et des deuxièmes petites régions à second type de conductivité ayant une deuxième concentration en impureté inférieure à la première concentration en impureté ; et une seconde région de relaxation de champ électrique, qui est formée de façon à entourer la première région de relaxation de champ électrique en direction du côté circonférentiel externe de la première région de relaxation de champ électrique, et qui comprend de manière alternée une pluralité de troisièmes petites régions de second type de conductivité ayant une troisième concentration en impureté égale ou supérieure à la première concentration en impureté, et une pluralité de quatrièmes petites régions à second type de conductivité ayant une quatrième concentration en impureté inférieure à la deuxième concentration en impureté.
PCT/JP2013/002110 2012-09-21 2013-03-28 Dispositif semi-conducteur et procédé de fabrication de dispositif semi-conducteur WO2014045480A1 (fr)

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JP2018198295A (ja) * 2017-05-25 2018-12-13 三菱電機株式会社 半導体装置の製造方法
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JP2018137410A (ja) * 2017-02-23 2018-08-30 富士電機株式会社 半導体装置の製造方法
JP2018198295A (ja) * 2017-05-25 2018-12-13 三菱電機株式会社 半導体装置の製造方法
JP2019096878A (ja) * 2017-11-24 2019-06-20 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ エッジ終端構造を有するシリコンカーバイド半導体部品
JP2020119922A (ja) * 2019-01-18 2020-08-06 トヨタ自動車株式会社 半導体装置

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