JP6488204B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6488204B2 JP6488204B2 JP2015136478A JP2015136478A JP6488204B2 JP 6488204 B2 JP6488204 B2 JP 6488204B2 JP 2015136478 A JP2015136478 A JP 2015136478A JP 2015136478 A JP2015136478 A JP 2015136478A JP 6488204 B2 JP6488204 B2 JP 6488204B2
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- 239000004065 semiconductor Substances 0.000 title claims description 172
- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 238000007667 floating Methods 0.000 claims description 146
- 239000000758 substrate Substances 0.000 claims description 100
- 230000002093 peripheral effect Effects 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 16
- 238000005468 ion implantation Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 6
- 210000000746 body region Anatomy 0.000 description 22
- 230000001681 protective effect Effects 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Description
2A:素子部
2B:周辺部
4:ドレイン電極
6:ソース電極
8:トレンチゲート
8a:ゲート電極
8b:ゲート絶縁膜
10:半導体基板
10A:素子部
10B:周辺部
11:ドレイン領域
12:ドリフト領域
13:ボディ領域
14:ソース領域
15:ボディコンタクト領域
22:ゲートフローティング領域
24:第1フローティング領域
26:第2フローティング領域
32:保護膜
TRG:ゲートトレンチ
TR1:第1トレンチ
TR2:第2トレンチ
Claims (2)
- スイッチング構造が設けられている素子部と終端構造が設けられている周辺部に区画されている半導体基板を備える半導体装置の製造方法であって、
前記半導体基板を準備する工程と、
前記周辺部に対応する前記半導体基板の一方の主面から深さ方向に沿って伸びる第1トレンチを形成する工程と、
前記第1トレンチの底面から前記深さ方向に沿って伸びており、前記素子部から離れる方向に沿って間隔を置いて配置されている複数の第2トレンチを形成する工程と、
前記第1トレンチの底面に設けられており、前記第2トレンチ間に配置されており、周囲の領域との間にpn接合を構成しており、電位がフローティングの複数の第1フローティング領域を形成する工程と、
前記第2トレンチの底面に設けられており、周囲の領域との間にpn接合を構成しており、電位がフローティングの複数の第2フローティング領域を形成する工程と、を備え、
前記複数の第2フローティング領域の各々が、前記素子部から離れる方向において、相互に離れて配置されており、
前記複数の第1フローティング領域を形成する工程と前記複数の第2フローティング領域を形成する工程は、前記第1トレンチと前記第2トレンチが露出した状態で前記第1トレンチの底面と前記第2トレンチの底面に向けてイオン注入することで同時に実施される、半導体装置の製造方法。 - スイッチング構造が設けられている素子部と終端構造が設けられている周辺部に区画されている半導体基板を備える半導体装置の製造方法であって、
前記半導体基板を準備する工程と、
前記周辺部に対応する前記半導体基板の一方の主面から深さ方向に沿って伸びる第1トレンチを形成する工程と、
前記第1トレンチの底面から前記深さ方向に沿って伸びており、前記素子部から離れる方向に沿って間隔を置いて配置されている複数の第2トレンチを形成する工程と、
前記第1トレンチの底面に設けられており、前記第2トレンチ間に配置されており、周囲の領域との間にpn接合を構成しており、電位がフローティングの複数の第1フローティング領域を形成する工程と、
前記第2トレンチの底面に設けられており、周囲の領域との間にpn接合を構成しており、電位がフローティングの複数の第2フローティング領域を形成する工程と、を備え、
前記複数の第2フローティング領域の各々が、前記素子部から離れる方向において、相互に離れて配置されており、
前記半導体基板を準備する工程では、第1導電型の第1半導体層と第2導電型の第2半導体層が積層した構成を前記周辺部に有するとともに前記第2半導体層が前記一方の主面に露出する前記半導体基板が準備され、
前記第1トレンチを形成する工程では、前記第2半導体層よりも浅い前記第1トレンチが形成され、
前記第2トレンチを形成する工程と前記複数の第1フローティング領域を形成する工程は、前記第1トレンチの底面から前記深さ方向に沿って伸びる前記複数の第2トレンチを形成することで同時に実施される、半導体装置の製造方法。
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