WO2014038066A1 - パワー半導体装置 - Google Patents
パワー半導体装置 Download PDFInfo
- Publication number
- WO2014038066A1 WO2014038066A1 PCT/JP2012/072908 JP2012072908W WO2014038066A1 WO 2014038066 A1 WO2014038066 A1 WO 2014038066A1 JP 2012072908 W JP2012072908 W JP 2012072908W WO 2014038066 A1 WO2014038066 A1 WO 2014038066A1
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- WIPO (PCT)
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- power semiconductor
- capacitor
- semiconductor device
- stress relaxation
- lead frame
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- H05K2201/09118—Moulded substrate
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- H—ELECTRICITY
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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- H05K2201/10166—Transistor
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
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- H—ELECTRICITY
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
図1は本発明の実施の形態1によるパワー半導体装置の内部の概観模式図であり、図2は本発明の実施の形態1による応力緩和構造部を示す図である。本実施の形態1のパワー半導体装置50は、配線パターン状に成型された複数のリードフレーム1と、スイッチング可能なパワー半導体素子2と、パワー半導体素子2のスイッチングによる電圧変動を緩和させるセラミックコンデンサ(適宜、コンデンサとも称する)100と、チップ抵抗器(適宜、抵抗器とも称する)20などのチップ部品と、端子が形成される複数のリードフレーム1の間や、リードフレーム1とパワー半導体素子2との間を接続する配線部材3と、リードフレーム1、パワー半導体素子2、チップ部品等の実装部品、及び配線部材3を封止するモールド樹脂5とを備える。図1では、3つのパワー半導体素子2a、2b、2cが実装され、5つのパワー端子11a、11b、11c、11d、11eと3つの信号端子12a、12b、12cを備えるパワー半導体装置50の例を示した。なお、パワー半導体素子の符号は、総括的に2を用い、区別して説明する場合に2a、2b、2cを用いる。パワー端子の符号は、総括的に11を用い、区別して説明する場合に11a、11b、11c、11d、11eを用いる。信号端子の符号は、総括的に12を用い、区別して説明する場合に12a、12b、12cを用いる。
図6は、実施の形態2による応力緩和構造部を拡大した図である。実施の形態2のパワー半導体装置50における応力緩和構造部39は、コンデンサ100の外部電極101に接続する電極接続部37と外部電極101に接続しない電極非接続部38とを備える。外部電極101において、応力緩和構造部39の電極接続部37に接続する部分を第1電極部102とし、応力緩和構造部39の電極接続部37に接続しない部分を第2電極部103とする。図6において、第1電極部102は矢印区間102で示した部分であり、第2電極部103は矢印区間103で示した部分である。第2電極部103は、図6における外部電極101の上側、すなわち、はんだ4が接合した上限部(限界部)よりも上側ではなく、コンデンサ実装部13の側に形成される。
図7は、本発明の実施の形態3による応力緩和構造部を示す図である。実施の形態3のパワー半導体装置50は、コンデンサ100本体よりも剛性が低い金属板32からなる応力緩和構造部39を備える。金属板32の一端はコンデンサ100の外部電極101に接続され、金属板32の他の一端はリードフレーム1のコンデンサ実装部13に接続されている。この応力緩和構造部39は、コンデンサ100とリードフレーム1の間に金属板32が介在するように配置された構造なので、モールド工程の際にコンデンサ100に加わる成型圧、モールド時の型締め、パワー半導体装置50の動作時における温度サイクル等によるコンデンサ100に生じる応力を、金属板32が変形することにより緩和することができる。この結果、コンデンサ100に生じる応力に起因したコンデンサ不良を防止することができ、製造プロセスの歩留まりを向上できる。
図8は、本発明の実施の形態4によるコンデンサ実装構造を示す図である。実施の形態4のパワー半導体装置50は、2つのリードフレーム1の間に固定された絶縁性の配線基板21上に形成された配線パターン22とコンデンサ100の外部電極101とが接合され、配線基板21に形成された配線パターン22とリードフレーム1とが別のワイヤーボンドなどの配線部材3により電気的に接続される構造を備える。すなわち、実施の形態4のパワー半導体装置50は、リードフレーム1及びコンデンサ100よりも剛性が低い配線基板21からなる応力緩和構造部39を備える。このように、実施の形態4のパワー半導体装置50は、コンデンサ100とリードフレーム1の間に配線基板21を配置することにより、モールド成型時の成型圧やモールド成型による型締めによる応力が、配線基板21により緩和されるので、直接コンデンサ100に生じることがなく、コンデンサ100が故障するのを防止することがきる。
Claims (11)
- モールド樹脂で封止されたパワー半導体装置であって、
配線パターン状に成型された複数のリードフレームと、
前記リードフレーム上に接合されたパワー半導体素子と、
互いに隣接した2つの前記リードフレームの間に配置されたコンデンサとを備え、
前記コンデンサは、当該コンデンサの外部電極が、当該コンデンサよりも剛性が低い応力緩和構造部を介して前記リードフレームに接続されたことを特徴とするパワー半導体装置。 - 前記コンデンサと前記リードフレームとの接続構造は、
当該コンデンサの外部電極に接続した前記応力緩和構造部と、前記応力緩和構造部と前記リードフレームを接続するはんだとを有し、
前記応力緩和構造部は、前記はんだよりも剛性が低いことを特徴とする請求項1記載のパワー半導体装置。 - 前記応力緩和構造部は、樹脂に導電性フィラーを配合した導電性応力緩和部を有することを特徴とする請求項1または2に記載のパワー半導体装置。
- 前記コンデンサは、当該コンデンサの前記外部電極における前記リードフレームに対向する側において、前記応力緩和構造部が接続されない非接続部を有し、
前記非接続部は前記モールド樹脂により覆われたことを特徴とする請求項1乃至3のいずれか1項に記載のパワー半導体装置。 - 前記応力緩和構造部は、前記コンデンサの前記外部電極に接続する電極接続部と、前記外部電極に接続しない電極非接続部とを有することを特徴とする請求項1乃至4のいずれか1項に記載のパワー半導体装置。
- 前記応力緩和構造部は、金属板であることを特徴とする請求項1または2に記載のパワー半導体装置。
- 前記応力緩和構造部は、前記コンデンサの前記外部電極に接続する配線パターンを有する絶縁性の配線基板であることを特徴とする請求項1または2に記載のパワー半導体装置。
- 前記応力緩和構造部は、前記リードフレーム上に配置されると共に当該リードフレームと絶縁された第2のリードフレームであり、
前記第2のリードフレームは、前記コンデンサの前記外部電極に接続されると共に、配線部材により前記リードフレームに接続されたことを特徴とする請求項1または2に記載のパワー半導体装置。 - 請求項1乃至8のいずれか1項に記載のパワー半導体装置は、車載用の回転電機に設置され、前記回転電機の電機子に電流を供給することを特徴とするパワー半導体装置。
- 前記パワー半導体素子は、ワイドバンドギャップ半導体材料により形成されていることを特徴とする請求項1乃至9のいずれか1項に記載のパワー半導体装置。
- 前記ワイドバンドギャップ半導体材料は、炭化珪素、窒化ガリウム系材料、またはダイヤモンドのうちいずれかであることを特徴とする請求項10記載のパワー半導体装置。
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PCT/JP2012/072908 WO2014038066A1 (ja) | 2012-09-07 | 2012-09-07 | パワー半導体装置 |
CN201280075682.1A CN104604344B (zh) | 2012-09-07 | 2012-09-07 | 功率半导体装置 |
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JP2018032670A (ja) * | 2016-08-22 | 2018-03-01 | Koa株式会社 | チップ部品、チップ部品の実装構造、チップ抵抗器の製造方法 |
CN112863874A (zh) * | 2016-09-23 | 2021-05-28 | Tdk株式会社 | 电子部件和电子部件装置 |
JP2018049999A (ja) * | 2016-09-23 | 2018-03-29 | Tdk株式会社 | 電子部品及び電子部品装置 |
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JP7040534B2 (ja) | 2017-12-29 | 2022-03-23 | 株式会社村田製作所 | 積層セラミックコンデンサ、積層セラミックコンデンサの実装構造体および電子部品連 |
JPWO2021019867A1 (ja) * | 2019-07-30 | 2021-02-04 | ||
JP7166464B2 (ja) | 2019-07-30 | 2022-11-07 | 三菱電機株式会社 | チップ部品、チップ部品の製造方法、および電子機器の製造方法 |
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Also Published As
Publication number | Publication date |
---|---|
EP2894952A1 (en) | 2015-07-15 |
CN104604344A (zh) | 2015-05-06 |
US20150287670A1 (en) | 2015-10-08 |
JPWO2014038066A1 (ja) | 2016-08-08 |
EP2894952A4 (en) | 2017-01-25 |
JP5989124B2 (ja) | 2016-09-07 |
EP2894952B1 (en) | 2018-06-06 |
US9620444B2 (en) | 2017-04-11 |
CN104604344B (zh) | 2019-04-16 |
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