CN104604344A - 功率半导体装置 - Google Patents

功率半导体装置 Download PDF

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Publication number
CN104604344A
CN104604344A CN201280075682.1A CN201280075682A CN104604344A CN 104604344 A CN104604344 A CN 104604344A CN 201280075682 A CN201280075682 A CN 201280075682A CN 104604344 A CN104604344 A CN 104604344A
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China
Prior art keywords
power semiconductor
capacitor
stress
lead frame
semiconductor arrangement
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CN201280075682.1A
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CN104604344B (zh
Inventor
深濑达也
中岛泰
藤田畅彦
加藤政纪
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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Abstract

根据本发明的功率半导体装置(50)，包括：成型为布线图案状的多个引线框(1)、接合在引线框(1)上的功率半导体元件(2)、以及配置在彼此相邻的两个引线框(1)之间的电容器(100)，并由模塑树脂(5)进行密封。电容器(100)的特征在于，该电容器(100)的外部电极(101)经由刚性低于该电容器(100)的应力缓和结构部(39)与引线框(1)相连接。

Description

功率半导体装置
技术领域
本发明涉及在内部具有电容器的传递模塑(transfer-mold)型功率半导体装置，尤其涉及车载设备所搭载的功率半导体装置。
背景技术
目前，在全球变暖的大环境下，对于运输设备的改善燃料消耗的要求越来越高。尤其是对于汽车所搭载的车载电子组件，迫切要求其进一步小型化和轻量化。此外，在车载电子组件中，对于交流发电机等车辆用旋转电机，也正致力于提高其发电效率和功率转换效率。其中之一便是致力于将逆变器应用于整流器等功率转换部。应用逆变器作为功率转换部的旋转电机与整流器的旋转电机相比，其输出电流得到高精度地控制，并能够增加再生发电、发动机起动等新功能。
此外，在车载用设备的整流器中，使用二极管来作为功率半导体元件，而在车载用设备的逆变器中，使用的是MOS-FET(Metal Oxide Semiconductor-FieldEffect Transistor：金属氧化物半导体场效应晶体管)、IGBT(Insulated GateBipolar Transistor：绝缘栅双极型晶体管)。逆变器中所使用的这些功率半导体元件是通过向栅极施加电压来进行通断(ON-OFF)的开关元件，与二极管相比，栅极导通(gate-on)时的通电损耗(以下，记载为导通电阻)较小。由此，在将逆变器应用于功率转换部的车载用设备中，发电效率和功率转换效率得以提高。此外，MOS-FET、IGBT等开关元件也可以用于交流发电机、电动发电机的用于控制励磁电流的功率半导体装置。用于控制励磁电流的功率半导体元件设置在向作为旋转子的转子的励磁绕组供电的路径上，用于对励磁电流进行控制。
以往，这些车载电子组件中所搭载的车载用功率半导体装置是通过组合壳体型功率半导体装置、单功能的分立型功率半导体装置等来制造得到的，其中，壳体型功率半导体装置是将功率半导体元件焊接到图案形成有布线的绝缘性的基板上、并通过布线构件进行连接，然后通过硅凝胶等对其进行密封而得到的，单功能的分立型功率半导体装置是通过将二极管、MOS-FET等元件传递成型而得到的。将该功率半导体装置配置在车载设备的散热片(heat sink)等散热器附近，从而使得功率半导体元件发出的热量从散热器释放。
对于车载用电子组件的功率半导体装置，由于其搭载空间狭窄，因此，需要将其尺寸形成得较小。然而，在将车载用电子组件所搭载的具备MOF-FET、IGBT等开关元件即功率半导体元件进行搭载的功率半导体装置中，会因功率半导体元件的开关而导致电流间断地流动。因此，在功率半导体装置中，需要设置用于缓和功率半导体元件开关时的电压变动的电容器。该电容器需要设置在功率半导体装置的附近，由此成为阻碍旋转电机小型化的因素。
例如，在专利文献1中，公开了下述模塑型(mold-type)半导体装置，该模塑型半导体装置通过在引线框的电源－接地间安装贴片电容器，并利用树脂密封小功率的集成电路(IC芯片)和贴片电容器而得到。该半导体装置具有在引线框的系杆(tie-bar)上安装电容器，并利用树脂进行密封的结构。由此，能够将电容搭载于小功率集成电路的附近，并且能够实现噪声的降低。
现有技术文献
专利文献
专利文献1：日本专利特开昭59-72757号公报(图2)
发明内容
发明所要解决的技术问题
专利文献1中记载有通过利用树脂密封集成电路(IC芯片)和贴片电容器，从而在减小电感的同时提高安装密度的半导体装置的结构。我们考虑在搭载有MOF-FET、IGBT等的功率半导体元件的功率半导体装置中，也想要通过密封功率半导体元件和用于缓和功率半导体元件开关时的电压变动的电容器，来得到小型的传递模塑型功率半导体装置。功率半导体装置与小功率的集成电路等的半导体装置相比，需要在严苛的环境下进行动作，因此，功率半导体装置所承受的温度循环较大。
因此，如专利文献1所示那样，若仅仅是在引线框的系杆上安装电容器并利用树脂进行密封这样的功率半导体装置，则在严苛的环境下进行动作时或制造时，电容器会发生故障。即，在专利文献1所示的结构中，存在下述问题：功率半导体装置所承受的温度循环、模塑成型时的成型压力等因素会导致电容器发生故障。
此外，由于与通常的集成电路(IC芯片)相比，功率半导体装置中会流过大电流，因此，引线框的厚度形成得较厚。因此，在功率半导体装置中，在安装电容器的引线框的端子之间不可避免地会出现数μm到数十μm左右的高低差，从而两个外部电极处的安装电容器的引线框的电容器安装部与电容器的外部电极之间的平行性不同。由于该高低差因模塑成型时的成型压力而向高低差减小的方向变化，或者制造工艺中引线框在传送时的振动传递到电容器，从而导致较大的应力施加到电容器。由此，也存在因较大的应力施加到电容器而导致电容器发生故障，生产时的成品率下降的问题。
本发明是为了解决上述问题而完成的，其目的在于，在内部具有电容器的传递模塑型的功率半导体装置中，防止在动作时或制造时电容器发生故障。
解决技术问题所采用的技术方案
本发明所涉及的功率半导体装置是利用模塑树脂进行密封的功率半导体装置，包括：成型成布线图案状的多个引线框、接合在引线框上的功率半导体元件、以及配置在彼此相邻的两个引线框之间的电容器，电容器的特征在于，该电容器的外部电极通过刚性低于该电容器的应力缓和结构部连接至引线框。
发明效果
根据本发明所涉及的功率半导体装置，电容器的外部电极通过刚性低于该电容器的应力缓和结构部连接至引线框，因此，利用该刚性低于电容器的应力缓和结构部能够缓和动作时或制造时电容器中产生的应力，从而能够防止电容器被破坏。
附图说明
图1是本发明的实施方式1所涉及的功率半导体装置的内部概要示意图。
图2是表示本发明的实施方式1所涉及的应力缓和结构部的图。
图3是放大本发明的实施方式1所涉及的应力缓和结构部而得到的图。
图4是放大本发明的实施方式1所涉及的其他应力缓和结构部而得到的图。
图5是放大本发明的实施方式1所涉及的又一其他应力缓和结构部而得到的图。
图6是放大本发明的实施方式2所涉及的应力缓和结构部而得到的图。
图7是表示本发明的实施方式3所涉及的应力缓和结构部的图。
图8是表示本发明的实施方式4所涉及的电容器安装结构的图。
图9是表示本发明的实施方式4所涉及的其他电容器安装结构的图。
具体实施方式
实施方式1.
图1是本发明的实施方式1所涉及的功率半导体装置的内部概要示意图，图2是表示本发明的实施方式1所涉及的应力缓和结构部的图。本实施方式1的功率半导体装置50包括：成型成布线图案状的多个引线框1；可进行开关的功率半导体元件2；使因功率半导体元件2的开关而引起的电压变动缓和的陶瓷电容器(适当地也称为电容器)100；贴片电阻器(适当地也称为电阻器)20等贴片元器件；将形成有端子的多个引线框1之间、引线框1与功率半导体元件2之间连接的布线构件3；以及对引线框1、功率半导体元件2、贴片元器件等安装元器件、以及布线构件3进行密封的模塑树脂5。图1中，示出安装有三个功率半导体元件2a、2b、2c，并具有五个功率端子11a、11b、11c、11d、11e以及三个信号端子12a、12b、12c的功率半导体装置50的示例。另外，功率半导体元件的标号统一使用2，在进行区别说明时使用2a、2b、2c。功率端子的标号统一使用11，在进行区别说明时使用11a、11b、11c、11d、11e。信号端子的标号统一使用12，在进行区别说明时使用12a、12b、12c。
功率半导体装置50经由绝缘性的粘接剂、绝缘性的基板、绝缘性片材等固定于车载用设备。功率半导体装置50也存在下述情况，即：功率半导体装置50的相对于被固定部的面具有绝缘层，经由焊接或散热膏来对其进行加压固定。功率半导体装置50的突出至外部的端子是流过几安培到一百几十安培左右的大电流的功率端子11、以及用于控制功率半导体元件2的栅极信号线或传感器信号线等的信号端子12，功率端子11经由中继构件与供电的装置和电池等电源相连接，控制用的信号端子12连接至车载用设备所搭载的控制基板。
功率半导体装置50搭载可进行开关的MOS-FET、IGBT等功率半导体元件2，利用与控制基板相连接的栅极信号线传送来的信号来进行开关，由此对通电至输出用功率端子11(例如，11a、11b、11c)的电流量进行控制。对于功率半导体元件2的下表面(与引线框1相对的面)与引线框1的接合，可利用焊料4或导电性糊料等导电性接合剂来进行连接。功率半导体元件2的芯片上所形成的电极部与引线框1之间可利用布线构件3来进行连接，该布线构件3是通过超声振动来接合铝或铜制的圆形剖面或矩形剖面的线材而得到的焊线(wire bond)、布线用的引线框1、金属制终端等。
引线框1与陶瓷电容器100、贴片电阻器20等安装元器件之间可通过焊料4等接合部剂来进行接合。陶瓷电容器100是层叠电介质部和电极部而得到的层叠陶瓷电容器，具备由外部电极层构成的外部电极101。陶瓷电容器100安装在两个引线框1之间，该两个引线框1之间的电位不同。多个引线框1通过冲压加工、刻蚀加工而形成，在各个引线框1之间存在数μm到数十μm左右的高低差。
功率半导体装置50中，在引线框1上利用接合部剂来接合功率半导体元件2和安装元器件，并利用布线构件3进行连接，然后通过模塑树脂5对其进行密封。功率半导体装置50中，为了使内部搭载的功率半导体元件2通电时产生的发热有效地释放至车载设备中与功率半导体装置50相接合的功率半导体装置接合部，有时会在功率半导体装置50的与车载设备的功率半导体装置接合部相对的面上设置使引线框1的一部分露出的引线框露出面。功率半导体装置50的引线框露出面例如如图1所示，形成在没有安装功率半导体元件2、贴片元器件等的面(背面)一侧。功率半导体装置50的引线框露出面经由热阻较小的绝缘部与车载设备的功率半导体装置接合部相接合。由此，功率半导体元件2产生的热有效地向车载设备的功率半导体接合部进行散热，进而从设置于车载设备的散热片等进行散热。
这里，本发明的功率半导体装置50在包括成型成布线图案状的多个金属制的引线框1；接合在引线框1上的功率半导体元件2；将形成有端子的多个引线框1之间、引线框1与形成在功率半导体元件2的上部的电极部之间连接的布线构件3；对形成在功率半导体元件2的下表面的下表面电极部与引线框1进行接合的接合部剂；以及包裹引线框1、功率半导体元件2、布线构件3及接合部剂的模塑树脂5的现有结构的基础上，还在功率半导体装置50内部所形成的电路中，具备用于缓和功率半导体元件2开关时的电压变动的电容器100。本发明的功率半导体装置50如图2所示，在电容器100的外部电极101与引线框1的电容器安装部13之间具备应力缓和结构部39。
功率半导体装置50的温度会因车载用设备的动作、所设置的环境温度的变动、功率半导体元件2的通电等而发生大幅变动。在功率半导体装置50的温度变化较大的情况下，因电容器100与周边构件之间的线膨胀系数差而导致电容器100中产生的热应力变大，因此，难以采用单纯地将电容器100安装到引线框1上、并用模塑树脂5来进行密封的结构。但是，通过具备本发明的结构，即使在温度变化较大的车载用设备中搭载功率半导体装置50的情况下，也可以采用具有在两个引线框1之间安装电容器100、并利用模塑树脂5来进行密封的结构的功率半导体装置50。此外，在制造功率半导体装置50时，在制造产线上对在两个引线框1之间接合有电容器100的中间制造体进行传送时，应力缓和结构部39也可对因振动引起的施加到电容器100上的应力、传送中在施加外力时施加到电容器100的应力进行缓和，从而防止产生故障，由此能够提高制造的成品率。
电容器100的外部电极101与引线框1的电容器安装部13通过焊料4相接合。本发明的功率半导体装置50具有下述结构，即：在电容器安装部13的导电性接合剂即焊料4与外部电极101之间具备刚性低于导电性接合剂的应力缓和结构部39，并且其周边被模塑树脂5包围。作为应力缓和结构部39，例如可使用在环氧树脂、有机硅树脂等低弹性模量的树脂中混合入导电性填充物而得到的应力缓和层即导电性应力缓和部30。该情况下，通过将导电性应力缓和部30的弹性模量设为低于模塑树脂5的弹性模量，从而能够发挥所需的应力缓和作用。金属微粒较为适合作为导电性填充物。由此，当功率半导体装置50发生温度变化，构成功率半导体装置50的构成构件因线膨胀系数差而产生形变时，应力缓和结构部39对因变形而在电容器100中产生的热应力进行缓和，从而可防止电容器100与引线框1之间的接合部断裂、电容器100发生故障。
该应力缓和结构部39由包含有导电性填充物的导电性构件构成。图2中，示出将应力缓和结构部39仅配置在导电性接合剂(焊料4)的附近的示例，但也可以配置为覆盖外部电极101。在所例示的两种情况下，通过进行将应力缓和结构部39附加于电容器100的外部电极101的预处理，从而使得生产工艺的效率得以提高。
在安装电容器100的两个引线框1的电容器安装部13之间，如上所述，会产生数μm到数十μm左右的高低差。若在存在该高低差的状态下，利用模塑树脂5密封安装有电容器100的中间制造体，则两个引线框1之间的高低差会因甚至会达到100气压左右的成型压力、模塑时的合模而向该高低差变小的方向变化，从而有可能导致电容器100产生裂纹。因此，即使在利用模塑树脂5进行密封的情况下，刚性较低的应力缓和结构部39会比导电性粘接剂(焊料4)先发生变形，从而能够缓和电容器100中产生的应力。由此，能够防止电容器100中产生裂纹，从而能够防止制造工艺中成品率的下降。并且，即使在制造产线上对模塑密封前的引线框1上接合有电容器100的中间制造体进行传送时，应力缓和结构部39也能够缓和因振动引起的施加到电容器100的应力、传送中施加外力时所施加到电容器100的应力。
包含有应力缓和结构部39的电容器100与引线框1的接合部最终被模塑树脂5覆盖。在应力缓和结构部39缓和上述应力时，即使应力缓和结构部39翘曲、应力缓和结构部39的一部分中出现缝隙等变形较大的情况下，由于电容器100及引线框1被模塑树脂5所保持，因此电容器的固定强度不会下降，能够防止功率半导体装置50的功能丧失、以及发生功能障碍。此外，由于应力缓和结构部39的刚性低于焊料4、电容器100，因此，在假设出现两个电容器安装部13之间存在特别大的高低差等标准之外的情况下，由于应力缓和结构部39被破坏，从而成为开路异常，因此，能够便于发现问题，进而能够减少检查装置等设备费用。
图3是表示本发明的实施方式1所涉及的应力缓和结构部的图。如上所述，应力缓和结构部39由导电性填充物与树脂剂的混合物构成。应力缓和结构部39的刚性大幅低于将电容器100与引线框1进行接合的导电性接合剂(焊料4)的刚性。由此，在因功率半导体装置50动作时的温度循环、模塑成型时两个引线框1之间的高低差变小这样的变形、传送时的压力等而导致电容器100与引线框1的接合部产生应力的情况下，应力缓和结构部39主动地进行变形来防止电容器100的故障。
此外，如图4所示，应力缓和结构部39也可以由导电性应力缓和部30和设置于导电性应力缓和部30表面的Ni、Sn等金属镀层31构成。图4是放大本发明的实施方式1所涉及的其他应力缓和结构部而得到的图。通过设置Ni、Sn等金属镀层31，与仅设置导电性应力缓和部30的情况相比，能够易于进行焊接。
图5是放大本发明的实施方式1所涉及的又一其他应力缓和结构部而得到的图。图5是存在焊料4的一部分和导电性应力缓和部30的一部分缺损的部分即缺损部40的情况的示例。虚线6相当于存在图3所示的焊料4的端部，虚线35相当于存在图3所示的导电性应力缓和部30的端部。电容器100中，在外部电极101的与引线框1相对的一侧具有没有连接应力缓和结构部39的非连接部111。实施方式1的功率半导体装置50中，即使在设置于电容器100与引线框1的电容器安装部13之间的应力缓和结构部39中，在模塑工序前产生会导致其一部分出现缝隙或裂纹的破坏的变形的情况下，在模塑工序中模塑树脂5被填充至应力缓和结构部39中所产生的缺损部40。即，即使在存在非连接部111的情况下，非连接部111也会在模塑工序中被模塑树脂5覆盖。因此，实施方式1的功率半导体装置50具有下述结构：即使在电容器100与引线框1的接合部产生焊料4或导电性应力缓和部30缺损的缺损部40，该缺损部40也被模塑树脂5所填充。
实施方式1的功率半导体装置50具备在模塑工序之前应力作用到电容器100的情况下，通过使应力缓和结构部39变形或部分破损来缓和电容器100中产生的应力的结构，并且还具备在保持该状态不变的情况下引线框1及功率半导体元件2、电容器100等安装元器件被模塑树脂5覆盖的结构，即模塑树脂5进入应力缓和结构部39变形或部分破损的部位(缺损部40)。由此，实施方式1的功率半导体装置50在通过使应力缓和结构部39变形或部分破损来减小电容器100的应力的情况下，也能利用填补到变形或部分破损的部位(缺损部40)中的模塑树脂5，来确保对电容器100进行保持的强度。
此外，考虑下述与实施方式1的功率半导体装置50不同的结构，例如，即使存在应力缓和结构部39，但在其周围没有配置模塑树脂5的结构。在具有该结构的功率半导体装置中，在制造工艺中产生伴随着应力缓和结构部39的破坏的变形、功率半导体装置50所承受的温度变化较大的情况下，由于因构成功率半导体装置的构件间的线膨胀系数差而引起的应力反复集中作用于呈切口形状(裂纹)的变形部(缺损部40)，从而导致裂纹继续扩展，最终该裂纹成为故障。因此，在该情况下，需要对制造工艺中应力缓和结构部39是否发生了伴随着破坏的变形进行检查，从而导致检查成本的增加。然而，通过具备本发明的结构，能够避免这种成本增加。
根据实施方式1的功率半导体装置50，包括：成型为布线图案状的多个引线框1、接合在引线框1上的功率半导体元件2、以及配置在彼此相邻的两个引线框1之间的电容器100，用模塑树脂5进行密封。这种电容器100的特征在于，该电容器100的外部电极101经由刚性低于该电容器100的应力缓和结构部39连接至引线框1，因此，可利用刚性低于电容器的应力缓和结构部39来缓和动作时、制造时电容器100中产生的应力，从而能够防止电容器100被破坏。
实施方式1的应力缓和结构部39具备刚性低于焊料4和电容器100的导电性应力缓和部30，因此，能够缓和动作时、制造时电容器中产生的应力，从而能够防止电容器被破坏。实施方式1的功率半导体装置50中，由于电容器100、引线框1的电容器安装部13以及应力缓和结构部39被模塑树脂5密封，因此，通过使导电性应力缓和部30变形或部分破损，从而能够缓和模塑成型时的热应力、因动作环境下的温度循环而引起的热应力，从而能够防止电容器裂纹。此时，即使导电性应力缓和部30的一部分变形或被破坏，但由于电容器100和电容器安装部13由模塑树脂5进行保持，因此，引线框1与电容器100之间的通电路径或电路结构不会被破坏。
实施方式1的应力缓和结构部39的导电性应力缓和部30由导电性填充物与树脂的混合物构成，因此，能够将导电性应力缓和部30的刚性大幅减小至小于焊料4和电容器100的刚性。
实施方式1的功率半导体装置50由于具备引线框1、以及功率半导体元件2、电容器100等安装元器件被模塑树脂5覆盖的结构，因此，即使在通过使应力缓和结构部39变形或部分破损来减小电容器100的应力的情况下，也能利用填补至变形或部分破损的部位(缺损部40)的模塑树脂5，来确保对电容器100进行保持的强度。
实施方式1的功率半导体装置50中，用于使功率半导体元件2开关时的电压变动缓和的电容器100隔着应力缓和结构部39与引线框1相连接，因此，能够将电容器100设置在功率半导体元件2的附近，从而能够使功率半导体装置50小型化。实施方式1的功率半导体装置50能够用作为对逆变器一体型旋转电机的电枢电流或励磁电流进行控制的功率半导体装置。电枢电流是在定子成为电枢时流过电枢的电流。励磁电流是在转子成为电枢时卷绕于转子的励磁绕组中流过的电流。对逆变器一体型的旋转电机的电枢电流、励磁电流进行控制的功率半导体装置中，旋转电机的热传递至功率半导体装置，从而功率半导体装置的温度上升，因线膨胀系数差而引起的应力也变大。即使是这种在严苛的环境下进行动作的逆变器一体型旋转电机，由于实施方式1的功率半导体装置50具备应力缓和结构部39，因此，也能够缓和电容器100中产生的应力，从而能够防止电容器100被破坏。
实施方式2.
图6是放大实施方式2所涉及的应力缓和结构部而得到的图。实施方式2的功率半导体装置50中，应力缓和结构部39包括连接至电容器100的外部电极101的电极连接部37、以及不与外部电极101相连接的电极非连接部38。外部电极101中，将与应力缓和结构部39的电极连接部37相连接的部分设为第1电极部102，将不与应力缓和结构部39的电极连接部37相连接的部分设为第2电极部103。图6中，第1电极部102是箭头区间102所示的部分，第2电极部103是箭头区间103所示的部分。第2电极部103形成在电容器安装部13一侧，而并非形成在图6中外部电极101的上侧、即接合有焊料4的上限部(界限部)的上侧。
由于实施方式2的应力缓和结构部39具备电极非连接部38，因此可以不将电容器100的第2电极部103固定到引线框1。实施方式2的应力缓和结构部39中，由于电容器100的第2电极部103不与引线框1相固定，因此，在施加了模塑成型时的成型压力的情况下，第2电极部103附近、即电极非连接部38会有稍许移动，从而能够减小作用于电容器100的模塑成型时的应力，进而能够防止电容器100被破坏。
此外，实施方式2的功率半导体装置50中，由于在模塑成形后，将模塑树脂5填充到第2电极部103与电极非连接部38之间，因此能够得到足够的电容器固定强度。第2电极部103能够以不与成为电极非连接部38的导电性应力缓和部30相连接、且不被焊料4浸润的方式，通过涂布耐热性较高的聚酰亚胺树脂等来形成在外部电极101的表面。除了聚酰亚胺，也可以使用铝。通过在外部电极101的表面涂布铝，从而能够使得外部电极101不与成为电极非连接部38的导电性应力缓和部30相连接，并且能够不被焊料浸润。这种铝层可通过使用铝粉末进行烧成，并层叠在电容器100的电极上来形成。
图6中示出下述结构例，即：在电容器100的外部电极101的侧面配置可与电极连接部37相连接、且能够利用焊料4进行焊接的第1电极部102，在与引线框1相对的电容器100的相对面配置能够形成电极非连接部38、且无法利用焊料4进行焊接的第2电极部103。另外，实施方式2的功率半导体装置50中，为了形成第2电极部103，也可以对引线框1进行设计。具体而言，实施方式2的功率半导体装置50中的引线框1可以采用在与电容器100相对的引线框1的电容器安装部13的一部分配置无法进行焊接的电极层的结构，或者配置电容器安装部13的一部分无法被焊接的聚酰亚胺树脂层的结构。在该情况下，由于对引线框1一侧进行了设计，因此在电容器100的成为第1电极部102的部分就无需配置材料不同于外部电极101的聚酰亚胺树脂层或铝层。
实施方式3.
图7是表示本发明的实施方式3所涉及的应力缓和结构部的图。实施方式3的功率半导体装置50具备由刚性低于电容器100主体的金属板32构成的应力缓和结构部39。金属板32的一端与电容器100的外部电极101相连接，金属板32的另一端与引线框1的电容器安装部13相连接。该应力缓和结构部39具有隔着金属板32配置在电容器100与引线框1之间的结构，因此，在进行模塑工序时，能够通过金属板32的变形来缓和因施加到电容器100的成型压力、模塑时的合模、功率半导体装置50动作时的温度循环等而导致的电容器100中产生的应力。其结果是，能够防止因电容器100中产生的应力而引起的电容器不良，从而能够提高制造工艺的成品率。
在实施方式3的应力缓和结构部39中，金属板32的刚性越低，减小电容器应力的效果越显著。此外，在实施方式3的应力缓和结构部39中，与电容器100和引线框1之间的距离d相当的长度越长，减小电容器应力的效果越显著。作为金属板32的材质，优选线膨胀系数接近于电容器100的因瓦合金(invar)类材料。实施方式3的功率半导体装置50中，由于具备由金属板32构成的应力缓和结构部39，因此，金属板32的刚性只要满足能耐受利用模塑树脂5密封电容器100、应力缓和结构39、引线框1的制造工序的条件即可。
另外，在车载用设备中，要求具有较高的耐振动性能。在作为现有车载用功率半导体装置进行说明的壳体型功率半导体装置中，即使仅应用实施方式3的应力缓和结构部39即金属板32，也无法满足可靠性。这里对其理由进行说明。如上所述，在壳体型功率半导体装置中，在图案形成有布线的绝缘性基板上安装功率半导体元件、贴片元器件，并通过布线构件来连接功率半导体元件、贴片元器件，然后利用硅凝胶等对其进行密封，由于硅凝胶易于振动，因此即使仅应用金属板32也无法满足可靠性。
与此相对，即使在要求具有较高的耐振动性能的情况下，由于实施方式3的功率半导体装置50具备由金属板32构成的应力缓和结构部39，并利用与硅凝胶相比不易振动的模塑树脂5来密封引线框1上所安装的功率半导体元件2、电容器100等贴片元器件，因此，能够满足可靠性。
此外，还存在利用弹性较高的环氧树脂等通过灌封来进行密封的方法，但该方法中，流入环氧树脂的工艺时间较长，且内部包含有气泡。若灌封得到的树脂中包含有气泡，则需要增大需要确保绝缘的构件间的绝缘距离。需要确保绝缘的构件是指引线框1、布线构件3、功率半导体元件2的电极、电容器100的外部电极101等贴片元器件的电极等。与此相对，在实施方式3的功率半导体装置50中所应用的基于传递模塑的密封中，由于以高达100气压的高压来进行模塑成型和密封，因此，在模塑树脂5的内部不包含气泡等，从而能够缩小为确保上述构件间的绝缘而所需的绝缘距离。其结果是，能够使功率半导体装置50小型化。
实施方式4.
图8是表示本发明的实施方式4所涉及的电容器安装结构的图。实施方式4的功率半导体装置50具有下述结构，即：固定于两个引线框1之间的绝缘性布线基板21上所形成的布线图案22与电容器100的外部电极101相接合，布线基板21上所形成的布线图案22与引线框1通过其他的焊线等布线构件3电连接。即，实施方式4的功率半导体装置50具备由刚性低于引线框1及电容器100的布线基板21构成的应力缓和结构部39。由此，实施方式4的功率半导体装置50中，通过在电容器100与引线框1之间配置布线基板21，从而利用布线基板21使得因模塑成型时的成型压力、模塑成型的合模而引起的应力得以缓和，因此，使得应力不直接产生于电容器100，能够防止电容器100发生故障。
此外，实施方式4的功率半导体装置50中，由于布线基板21存在于电容器100与引线框1之间，即使在功率半导体装置50动作时产生了温度循环的情况下，电容器100与布线基板21之间的线膨胀率差也较小。因此，实施方式4的功率半导体装置50中，电容器100中产生的热应力变小，从而能够防止电容器100发生故障。作为布线基板21的材料，优选为与引线框1的材料之间的线膨胀系数差较小的材料，例如，优选为在玻璃纤维布中渗入环氧树脂而得到的FR-4(FlameRetardant-4)。
另外，图8中示出了使用绝缘性的布线基板21的情况，但也可以是图9所示那样的使用第2引线框7的其他的电容器安装结构。图9是表示本发明的实施方式4所涉及的其他电容器安装结构的图。图9中，电容器100接合在第2引线框7上，该第2引线框7以与引线框1相绝缘的状态进行固定。该情况下，通过使第2引线框7的厚度小于引线框1的厚度，能够缓和因温度循环而引起的电容器热应力。
实施方式4的功率半导体装置50中，通过在电容器100与引线框1之间配置布线基板21、与引线框1绝缘的第2引线框7，从而能够防止因模塑成形时的模塑成型压力、动作时的温度循环而产生的热应力直接传递至电容器100。因此，实施方式4的功率半导体装置50与实施方式1～3同样，能够利用刚性低于电容器的应力缓和结构部39缓和动作时、制造时电容器100中产生的应力，从而能够防止电容器100被破坏。
在上述任一实施方式中，功率半导体元件2均可由硅形成。也可以由与硅相比带隙较大的宽带隙半导体材料形成。作为宽带隙半导体材料，例如有碳化硅、氮化镓类材料或金刚石。
由这种宽带隙半导体材料形成的功率半导体元件2的耐电压性较高，容许电流密度也较高，因此，能够将功率半导体元件2形成得较小，通过使用这种小型化的功率半导体元件2，从而能够实现组装入这些元件的功率半导体装置50的小型化。
此外，本发明可以在该发明的范围内对各实施方式自由地进行组合，或对各实施方式进行适当的变形、省略。
标号说明
1…引线框，2、2a、2b、2c…功率半导体元件，3…布线构件，4…焊料，5…模塑树脂，7…第2引线框，21…布线基板，30…导电性应力缓和部，32…金属板，37…电极连接部，38…电极非连接部，39…应力缓和结构部，50…功率半导体装置，100…电容器，101…外部电极，111…非连接部。

Claims (11)

1.一种功率半导体装置，该功率半导体装置由模塑树脂进行密封，其特征在于，包括：
成型为布线图案状的多个引线框；
接合在所述引线框上的功率半导体元件；以及
配置在彼此相邻的两个所述引线框之间的电容器，
所述电容器中，该电容器的外部电极经由刚性低于该电容器的应力缓和结构部与所述引线框相连接。
2.如权利要求1所述的功率半导体装置，其特征在于，
所述电容器与所述引线框相连接的连接结构包括：
连接至所述电容器的外部电极的所述应力缓和结构部、以及对所述应力缓和结构部与所述引线框进行连接的焊料，
所述应力缓和结构部的刚性低于所述焊料。
3.如权利要求1或2所述的功率半导体装置，其特征在于，
所述应力缓和结构部具有向树脂混合入导电性填充物而得到的导电性应力缓和部。
4.如权利要求1至3的任一项所述的功率半导体装置，其特征在于，
所述电容器中，在该电容器的所述外部电极的与所述引线框相对的一侧具有不与所述应力缓和结构部相连接的非连接部，
所述非连接部被所述模塑树脂覆盖。
5.如权利要求1至4的任一项所述的功率半导体装置，其特征在于，
所述应力缓和结构部具有与所述电容器的所述外部电极相连接的电极连接部、以及不与所述外部电极相连接的电极非连接部。
6.如权利要求1或2所述的功率半导体装置，其特征在于，
所述应力缓和结构部是金属板。
7.如权利要求1或2所述的功率半导体装置，其特征在于，
所述应力缓和结构部是具有与所述电容器的所述外部电极相连接的布线图案的绝缘性的布线基板。
8.如权利要求1或2所述的功率半导体装置，其特征在于，
所述应力缓和结构部是配置在所述引线框上且与该引线框相绝缘的第2引线框，
所述第2引线框与所述电容器的所述外部电极相连接，且通过布线构件与所述引线框相连接。
9.一种功率半导体装置，其特征在于，
如权利要求1至8的任一项所述的功率半导体装置设置于车载用的旋转电机，向所述旋转电机的电枢提供电流。
10.如权利要求1至9的任一项所述的功率半导体装置，其特征在于，
所述功率半导体元件由宽带隙半导体材料形成。
11.如权利要求10所述的功率半导体装置，其特征在于，
所述宽带隙半导体材料是碳化硅、氮化镓类材料、或金刚石中的任一种。
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