CN110323186A - 半导体装置、半导体装置的制造方法以及电力变换装置 - Google Patents

半导体装置、半导体装置的制造方法以及电力变换装置 Download PDF

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Publication number
CN110323186A
CN110323186A CN201910227577.9A CN201910227577A CN110323186A CN 110323186 A CN110323186 A CN 110323186A CN 201910227577 A CN201910227577 A CN 201910227577A CN 110323186 A CN110323186 A CN 110323186A
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shell
semiconductor device
insulating substrate
metal plate
adhesives
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CN110323186B (zh
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北林拓也
吉田博
石桥秀俊
村田大辅
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Mitsubishi Corp
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Mitsubishi Corp
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Abstract

本发明的目的在于得到抑制电路图案上的有效面积的缩小并且确保绝缘性的功率模块。特征在于，具备：绝缘基板，其在上表面具有电路图案，在下表面具有金属板；半导体元件，其经由导电性部件而与电路图案接合；壳体，其配置为将绝缘基板的周边包围；封装材料，其在被壳体包围的部位，对半导体元件和绝缘基板进行封装；以及粘接材料，其在绝缘基板的侧面，将壳体与金属板固定。

Description

半导体装置、半导体装置的制造方法以及电力变换装置
技术领域
本发明涉及半导体装置、半导体装置的制造方法以及电力变换装置。
背景技术
近年来，伴随功率模块的高性能化，功率模块的工作温度存在上升的倾向。能够高温工作的功率模块需要对封装树脂与其它部件之间的剥离、绝缘基板的裂纹进行抑制，确保绝缘性。在专利文献1中，为了确保功率模块的绝缘性，将基板与壳体通过粘接剂而连接并进行封装。
专利文献1：日本特开2000-40759号公报
就专利文献1的功率模块而言，搭载半导体元件的电路基板的下表面与基座板连接，将基座板和壳体通过半固体状的粘接剂进行连接，从而防止粘接剂的涂敷不均。但是，会产生如下问题，即，由于基座板上表面和壳体通过粘接剂进行连接，因此基座板之上的电路基板的有效面积缩小。
发明内容
本发明就是为了解决上述问题而提出的，其目的在于，通过将基座板与壳体在基座板的侧面由粘接材料连接，从而抑制电路图案的有效面积的缩小并且确保绝缘性。
本发明涉及的功率模块，其特征在于，具备：绝缘基板，其在上表面具有电路图案，在下表面具有金属板；半导体元件，其经由导电性部件而与电路图案接合；壳体，其配置为将绝缘基板的周边包围；封装材料，其在被壳体包围的部位，对半导体元件和绝缘基板进行封装；以及粘接材料，其在绝缘基板的侧面，将壳体与金属板固定。
发明的效果
根据本发明涉及的功率模块，通过将壳体与基座板在基座板的侧面由粘接材料连接，从而能够抑制电路图案上的有效面积的缩小并且确保绝缘性。
附图说明
图1是表示实施方式1的功率模块的剖面图。
图2是表示实施方式1的功率模块的工作时的剖面图。
图3是表示实施方式1的半导体装置的制造方法的流程图。
图4是表示半导体元件与绝缘基板之间的连接的剖面图。
图5是表示安装有粘接材料10的壳体6的俯视图。
图6是将壳体6与基座板2a经由粘接材料10进行连接的剖面图。
图7是表示通过导线键合实现的电连接的剖面图。
图8是表示实施方式2的功率模块52的剖面图。
图9是表示实施方式2的功率模块的剖面图，该功率模块在基座板的端部具有V形剖面。
图10是表示实施方式3的功率模块的剖面图。
图11是表示电力变换系统的结构的框图，在该电力变换系统中应用了本实施方式涉及的电力变换装置。
标号的说明
1半导体元件，2绝缘基板，2a基座板，2b绝缘层，2c电路图案，3导电性部件，4(4a、4b)导电性导线，5(5a、5b)端子，6壳体，7封装材料，8散热器，10树脂，11 V形剖面，20壳体，30凸起，31凸起，40台阶，50功率模块，51功率模块，52功率模块，53功率模块，54功率模块，100电源，200电力变换装置，201主变换电路，202功率模块，203控制电路，300负载
具体实施方式
实施方式1
对实施方式1中的功率模块50进行说明。图1是表示实施方式1的功率模块50的剖面图。此外，在除了图1以外的其它图中，同一标号表示同一部分或者相当部分。就图1所示的功率模块50而言，半导体元件1经由导电性部件3与绝缘基板2的上表面接合。
绝缘基板2由基座板2a、绝缘层2b以及电路图案2c构成。
绝缘层2b设置于基座板2a之上。电路图案2c设置于绝缘层2b之上。基座板2a和电路图案2c例如由铜形成。绝缘层2b确保功率模块50与外部之间的电绝缘，绝缘层2b例如既可以由无机陶瓷材料形成，也可以由将陶瓷粉末分散于环氧树脂等热固性树脂之中而得到的材料形成。
端子5a的一端经由导电性导线4a而与电路图案2c电连接，另一端用于与外部之间的电信号的收发。端子5b的一端经由导电性导线4b而与半导体元件1的表面电极电连接，另一端用于与外部之间的电信号的收发。此外，端子5(5a、5b)只要具有导电性，则不特别地限定材质。
半导体元件1、绝缘基板2以及导电性导线4(4a、4b)由壳体6包围。壳体6由可塑性树脂等形成，端子5是在壳体6外嵌形成的。此外，端子5也可以是在壳体6嵌入形成的，还可以经由导电性部件与电路图案2c接合。
半导体元件1、绝缘基板2以及导电性导线4由封装材料7覆盖。封装材料7只要是具有绝缘性的材料，则不特别地限定，但例如是环氧树脂、凝胶等。端子5用于与外部进行信号的收发，因此端子5的一部分从封装材料7的表面露出。另外，绝缘基板2的背面从封装材料7露出，绝缘基板2的背面通过散热器等进行冷却。此外，绝缘基板2的背面只要能够得到冷却即可，因此并不需要必须使其从封装材料7露出。
在绝缘基板2的侧面，绝缘基板2与壳体6由粘接材料10固定。即，在基座板2a的侧面，将基座板2a与壳体6固定，因此能够抑制电路图案2c的有效面积的缩小。在图1中，基座板2a的下表面与粘接材料10的下表面存在于同一平面上，但也可以是基座板2a的下表面与壳体6的下表面存在于同一平面上。
粘接材料10的材料是通过加热而软化的树脂(例如，聚偏二氟乙烯、聚醚醚酮树脂、聚醚嵌段酰胺共聚物、四氟乙烯-六氟丙烯共聚物、全氟烷氧基氟树脂、硬质收缩性聚氯乙烯、聚乙烯、聚丙烯、烯烃类弹性体、硅树脂、氯丁橡胶)等。
粘接材料10能够通过加热而变形为任意形状，在基座板2a与壳体6的下部之间以无间隙地与它们接触的方式配置，因此能够将基座板2a与壳体6牢固地固定而不存在粘接不均的担忧。特别地，在容易产生水分的高湿度环境下，如果由于粘接不均等而在基座板2a与壳体6之间产生空隙，则水分从基座板2a与壳体6之间的间隙向功率模块50内进入。进入的水分由绝缘层2b吸收而发生水解反应，存在绝缘层2b劣化的担忧。因此，为了抑制绝缘性的劣化，通过粘接材料10而将基座板2a与壳体6之间无间隙地连接这一做法是重要的，通过本发明，能够抑制功率模块50的绝缘性的劣化。
另外，在功率模块50工作时，如图2所示，对工作时的热进行冷却的散热器8与基座板2a经由油脂等TIM(Thermal Interface Material)材料而连接。通过将粘接材料10以覆盖壳体6的内周下部、外周下部以及下表面的方式安装于壳体6的下部，从而能够抑制水分从壳体6的侧面进入。因此，能够抑制水分从壳体6与散热器8之间的间隙向功率模块50内进入。
在图1中，说明半导体元件1是IGBT，在纸面垂直方向上二极管(未图示)位于电路图案2c之上，IGBT、二极管各使用1个而并联连接的情况下的电路结构。端子5a是功率模块50的P端子，经由导电性导线4a与半导体元件1的背面电极即集电极(collector)电极(electrode)电连接。半导体元件1的表面电极即发射极电极经由导电性导线4b与功率模块50的N端子即端子5b电连接。另外，半导体元件1的集电极电极与二极管的阴极电极电连接，半导体元件1的发射极电极与二极管的阳极电极电连接，形成1in1模块的并联电路。当然也可以构成与上述电路结构不同的电路，例如，也可以形成2in1模块的半桥电路或6in1模块的3相逆变器电路。此外，外部端子5b也可以根据电路结构而成为输出端子。
这里，参照图3对实施方式1的半导体装置的制造方法进行说明。图3是表示半导体装置的制造方法的流程图，该半导体装置的基座板2a与壳体6由粘接材料10固定。在实施方式1的半导体装置的制造方法中，依次进行以下述工序的处理即：芯片接合工序60，将半导体元件1与绝缘基板2接合；定位工序61，进行基座板2a与壳体6的定位；导线键合工序62，进行用于构成电子电路的配线；加热工序63，为了将基座板2a与壳体6固定而对粘接材料10进行加热；以及封装工序64，用于通过封装材料7进行封装。
对图3的各工序进行说明。首先，参照图4对芯片接合工序60进行说明。通过导电性部件3将半导体元件1与绝缘基板2接合。此外，绝缘基板2既可以使用将基座板2a、绝缘层2b以及电路图案2c预先连接的绝缘基板，也可以通过芯片接合工序60而将它们分别连接。另外，用于与外部之间的电信号的收发的端子5既可以经由导电性部件与电路图案2c接合，也可以是端子5嵌入至壳体6而一体地形成。在本发明中，如图1所示，说明将与壳体6一体地形成的端子5用于与外部之间的电信号的收发的情况。
接下来，参照图5、图6对定位工序61进行说明。图5是表示安装有粘接材料10的壳体6的俯视图，图6是将基座板2a与壳体6经由粘接材料10进行连接的剖面图。此外，在图5中，为便于说明，端子5未图示。在定位工序61中，将基座板2a与壳体6定位，将基座板2a与壳体6临时固定。如图5、图6所示，粘接材料10以覆盖壳体6的内周下部、外周下部以及下表面的方式安装于壳体6。壳体6的下部由粘接材料10覆盖，使壳体6与粘接材料10之间的密接性提高，从而无需使用定位夹具，即可将基座板2a嵌入至壳体6的内周下部，将基座板2a与壳体6临时固定。
由此，基座板2a与壳体6能够容易地进行定位而不需要定位用夹具。此外，例如，也可以将环状的粘接材料10一体地或者可分离地安装于壳体6，将基座板2a与壳体6临时固定。
定位工序61之后是导线键合工序62。参照图7对导线键合工序62进行说明。在导线键合工序62中，将用于与外部之间的电信号的收发的端子5与半导体元件1经由导电性导线4电连接，构成逆变器电路等各种电子电路。此时，通过粘接材料10将基座板2a与壳体6临时固定，因此即使在导线键合时对绝缘基板2施加压力，也能够抑制基座板2a与壳体6之间的位置偏移。特别地，在将基座板2a和对壳体6的下部进行覆盖的粘接材料10载置于平面而进行导线键合时，导线键合时的振动由对壳体6的下表面进行覆盖的粘接材料10吸收，因此能够抑制基座板2a与壳体6之间的位置偏移。
接下来，对加热工序63进行说明。在加热工序63中，通过具有热源的加热炉等而对粘接材料10进行气氛加热，由此粘接材料10变形为任意形状，将基座板2a与壳体6之间无间隙地固定。此外，粘接材料10是在100～150℃的温度下热收缩的材料，对于进行加热的方法，无论与热源接触还是非接触，只要是粘接材料10的温度上升至大于或等于100℃的方法则不特别地限定。此外，优选壳体6的外周部由粘接材料10覆盖，通过粘接材料10的热收缩，从而粘接材料10的按压力从壳体6的外周部向基座板2a作用，能够将基座板2a与壳体6牢固地固定。
最后，对封装工序64进行说明。封装工序64将进行外部与半导体元件1之间的绝缘的封装材料7注入至由壳体6包围的部位而进行封装。此外，也可以在注入封装材料7时，为了使封装材料7的流动性良好，利用在加热工序63使用的热源的热。
封装材料7是液态的树脂，如果成为大于或等于某个温度则固化，因此注入封装材料7之后需要进行加热。通过将封装材料7加热而使其固化，从而结束封装工序64，完成如图1所示的功率模块50。此外，对于进行加热的方法，无论与热源接触还是非接触，只要是封装材料7的温度上升至封装材料7固化的温度的方法，则不特别地限定。另外，为了相对于水分等干扰来保护封装材料7，也可以在封装材料7的上部设置盖。通过设置盖，从而能够防止封装材料7的吸湿等，使功率模块的可靠性提高。
根据该实施方式1的功率模块，在基座板2a的侧面，基座板2a与壳体6由粘接材料10连接，由此实现能够确保电路图案2c上的有效面积并且确保绝缘性这样的效果。
另外，在基座板2a的侧面，通过将基座板2a与壳体6由粘接材料10连接，从而将基座板2a与壳体6之间无间隙地连接，实现能够抑制由吸湿导致的绝缘层2b的劣化这样的效果。
实施方式2
对实施方式2的功率模块进行说明。图8是表示实施方式2的功率模块52的剖面图。实施方式2的功率模块52在壳体6形成有凸起30，该凸起30与基座板2a的上表面接触。
根据该实施方式2的功率模块，凸起30在定位工序61中成为基座板2a与壳体6之间定位用的引导部，因此能够容易地将基座板2a与壳体6定位、临时固定，不需要定位用夹具等。
此外，即使在如图9中示出的功率模块53所示，在基座板2a的端部具备V形剖面11的情况下，本实施方式也有效。凸起31在V形剖面11之上具有与基座板2a的倾斜面面接触的倾斜面，通过使凸起31与基座板2a的倾斜面面接触，从而能够容易地将基座板2a与壳体6定位。
另外，在导线键合工序62中，凸起30、31成为引导部，因此即使导线键合时的压力施加至绝缘基板2，也能够抑制绝缘基板2与壳体6之间的位置偏移。
实施方式3
对实施方式3的功率模块进行说明。图10是表示实施方式3的功率模块54的剖面图。实施方式3的功率模块54在壳体6的下部形成有台阶40。
根据该实施方式3的功率模块，在壳体6的下部形成台阶40，因此壳体6与粘接材料10之间的接触面增加，由此密接性提高，能够将绝缘基板2与壳体6更加无位置偏移地临时固定。此外，台阶40也可以是多个，台阶40越是形成多个，壳体6与粘接材料10之间的接触面越增加，因此密接性越提高。
实施方式4
本实施方式是将上述实施方式1至3所涉及的功率模块应用于电力变换装置。本发明不限定于特定的电力变换装置，但以下，作为实施方式4，对将本发明应用于三相逆变器的情况进行说明。
图11是表示电力变换系统的结构的框图，在该电力变换系统中应用了本实施方式涉及的电力变换装置。
图11所示的电力变换系统由电源100、电力变换装置200、负载300构成。电源100是直流电源，向电力变换装置200供给直流电力。电源100能够由各种电源构成，例如，能够由直流系统、太阳能电池、蓄电池构成，也可以由与交流系统连接的整流电路或AC/DC转换器构成。另外，也可以使电源100由将从直流系统输出的直流电力变换为规定的电力的DC/DC转换器构成。
电力变换装置200是连接在电源100和负载300之间的三相逆变器，将从电源100供给的直流电力变换为交流电力，向负载300供给交流电力。电力变换装置200如图11所示，具备：主变换电路201，其将直流电力变换为交流电力而输出；以及控制电路203，其将对主变换电路201进行控制的控制信号向主变换电路201输出。
负载300是由从电力变换装置200供给的交流电力进行驱动的三相电动机。此外，负载300不限定于特定的用途，是搭载于各种电气设备的电动机，例如，用作面向混合动力汽车、电动汽车、铁道车辆、电梯或者空调设备的电动机。
以下，对电力变换装置200的详细情况进行说明。主变换电路201具备开关元件和续流二极管(未图示)，通过开关元件进行通断，从而将从电源100供给的直流电力变换为交流电力，向负载300供给。主变换电路201的具体的电路结构存在各种结构，本实施方式涉及的主变换电路201是两电平的三相全桥电路，能够由6个开关元件和与各个开关元件逆并联的6个续流二极管构成。在主变换电路201的各开关元件和各续流二极管的至少任意者应用上述实施方式1～3中的任意者涉及的功率模块。6个开关元件两个两个地串联连接而构成上下桥臂，各上下桥臂构成全桥电路的各相(U相、V相、W相)。并且，各上下桥臂的输出端子即主变换电路201的3个输出端子与负载300连接。
另外，主变换电路201具备对各开关元件进行驱动的驱动电路(未图示)，但驱动电路既可以内置于功率模块202，也可以是独立于功率模块202而另外具有驱动电路的结构。驱动电路生成对主变换电路201的开关元件进行驱动的驱动信号，供给至主变换电路201的开关元件的控制电极。具体地说，按照来自后述的控制电路203的控制信号，向各开关元件的控制电极输出将开关元件设为接通状态的驱动信号和将开关元件设为断开状态的驱动信号。在将开关元件维持为接通状态的情况下，驱动信号是大于或等于开关元件的阈值电压的电压信号(接通信号)，在将开关元件维持为断开状态的情况下，驱动信号成为小于或等于开关元件的阈值电压的电压信号(断开信号)。
控制电路203对主变换电路201的开关元件进行控制，以向负载300供给期望的电力。具体地说，基于应向负载300供给的电力，对主变换电路201的各开关元件应成为接通状态的时间(接通时间)进行计算。例如，能够通过与应输出的电压相对应地对开关元件的接通时间进行调制的PWM控制，对主变换电路201进行控制。并且，向主变换电路201所具备的驱动电路输出控制指令(控制信号)，以使得在各时刻向应成为接通状态的开关元件输出接通信号，向应成为断开状态的开关元件输出断开信号。驱动电路按照该控制信号，将接通信号或者断开信号作为驱动信号而向各开关元件的控制电极输出。
在本实施方式涉及的电力变换装置中，作为主变换电路201的开关元件和续流二极管而应用实施方式1至3涉及的功率模块，因此在基座板2a的侧面，基座板2a与壳体6由粘接材料10进行连接，由此实现确保电路图案2c上的有效面积并且确保绝缘性这样的效果。
另外，在基座板2a的侧面，基座板2a与壳体6由粘接材料10进行连接，由此将壳体6与基座板2a之间无间隙地进行连接，实现能够抑制由吸湿导致的绝缘层2b的劣化这样的效果。
在本实施方式中，对在两电平的三相逆变器应用本发明的例子进行了说明，但本发明不限定于此，能够应用于各种电力变换装置。在本实施方式中，采用了两电平的电力变换装置，但也可以是三电平或多电平的电力变换装置，在向单相负载供给电力的情况下，也可以在单相逆变器应用本发明。另外，在向直流负载等供给电力的情况下，也能够在DC/DC转换器或AC/DC转换器应用本发明。
另外，应用了本发明的电力变换装置不限定于上述的负载为电动机的情况，例如，还能够用作放电加工机、激光加工机、或者感应加热烹调器以及非接触器供电系统的电源装置，并且也能够用作太阳能发电系统以及蓄电系统等的功率调节器。
此外，本发明能够在本发明的范围内对各实施方式以及变形例自由地进行组合，对各实施方式适当地进行变形、省略。
另外，将部件与部件进行接合的导电性部件优选使用焊料、使用了金属填料的金属膏、或者因热而金属化的烧结金属等电阻低的金属。
另外，半导体元件1只要是开关元件或者二极管即可，例如，也可以是IGBT(Insulated Gate Bipolar Transistor)、MOSFET(Metal Oxide Semiconductor FieldEffect Transistor)、SBD(Schottky Barrier Diode)、PN二极管。并且，半导体元件的个数当然不限定于一个，也可以大于或等于两个。

Claims (9)

1.一种半导体装置，其特征在于，具备：
绝缘基板，其在上表面具有电路图案，在下表面具有金属板；
半导体元件，其经由导电性部件而与所述电路图案接合；
壳体，其配置为将所述绝缘基板的周边包围；
封装材料，其在被所述壳体包围的部位，对所述半导体元件和所述绝缘基板进行封装；以及
粘接材料，其在所述绝缘基板的侧面，将所述壳体与所述金属板固定。
2.根据权利要求1所述的半导体装置，其特征在于，
所述壳体的下部具有凸起，该凸起与所述金属板的上表面接触。
3.根据权利要求1或2所述的半导体装置，其特征在于，
在所述壳体的下部具有台阶。
4.根据权利要求1至3中任一项所述的半导体装置，其特征在于，
所述粘接材料覆盖所述壳体的下部。
5.一种电力变换装置，其具备：
主变换电路，其具有权利要求1至4中任一项所述的半导体装置，该主变换电路对被输入来的电力进行变换而输出；以及
控制电路，其将对所述主变换电路进行控制的控制信号向所述主变换电路输出。
6.一种半导体装置的制造方法，其具备：
芯片接合工序，利用在上表面具有电路图案、在下表面具有金属板的绝缘基板，将半导体元件经由导电性部件与所述电路图案的上表面接合；
定位工序，将壳体与所述金属板经由粘接材料而定位，该壳体以包围所述绝缘基板的周边的方式载置；以及
加热工序，对所述粘接材料进行加热，将所述壳体与所述金属板固定。
7.根据权利要求6所述的半导体装置的制造方法，其特征在于，
在所述定位工序中，所述壳体的下部具有凸起，该凸起与所述金属板的上表面接触。
8.根据权利要求7所述的半导体装置的制造方法，其特征在于，
在所述定位工序中，所述金属板的端部是在所述金属板的上表面和下表面朝向彼此相对的面倾斜而成的V形剖面，
所述V形剖面和所述凸起进行面接触。
9.根据权利要求6至8中任一项所述的半导体装置的制造方法，其特征在于，
所述粘接材料覆盖所述壳体的下部。
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