WO2011155615A1 - 低温焼結性接合材および該接合材を用いた接合方法 - Google Patents
低温焼結性接合材および該接合材を用いた接合方法 Download PDFInfo
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- WO2011155615A1 WO2011155615A1 PCT/JP2011/063418 JP2011063418W WO2011155615A1 WO 2011155615 A1 WO2011155615 A1 WO 2011155615A1 JP 2011063418 W JP2011063418 W JP 2011063418W WO 2011155615 A1 WO2011155615 A1 WO 2011155615A1
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- bonding
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- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0224—Conductive particles having an insulating coating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/0257—Nanoparticles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
Definitions
- the present invention relates to a bonding material and a bonding method using the same.
- Non-patent Document 1 a method of mixing silver oxide particles and myristyl alcohol to form a bonding material
- Patent Document 2 a method of mixing silver oxide particles and myristyl alcohol to form a bonding material
- Patent Document 3 a method of adding a carboxylic acid to form a bonding material
- Patent Document 3 a method that shows that silver nanoparticles coated with an alcohol-derived alkoxide can be used as a bonding material
- Non-Patent Document 1 As described in the technique described in Non-Patent Document 1, usually, such a joining method using silver requires a pressure from the upper part or the like at the time of joining. In order to apply such a technique, an apparatus capable of simultaneously performing pressurization and heating is required, and it can be said that there is a little difficulty in versatility. There is also a problem that it cannot be used for a material having only a mechanical strength that cannot withstand pressurization. Therefore, if a paste that exhibits an appropriate bonding force can be provided without applying pressure, it is expected that the objects to be used can be greatly expanded.
- the atmosphere for forming the bonded body is usually an oxidizing atmosphere containing oxygen such as in the air
- the silver at the interface that may adversely affect the bonding force changes to silver oxide due to oxidation.
- such an effect is considered to be remarkable in terms of bonding strength.
- the case where a combustible member exists in the vicinity of a joining part is also considered, and it must also be joined actively in an oxygen-free environment.
- Patent Document 3 it is possible to form a joined body, but there is a difficulty in storage stability. That is, as described in paragraph [0077] of Patent Document 3, if the addition of the solvent is not performed immediately before use, agglomeration of the particles occurs, so that the paste of the metal (silver) nanoparticles and the solvent is integrated. This indicates that it is difficult to provide in form, and its practicality is considered to be low.
- the present invention is capable of forming a bonded body in an inert gas such as nitrogen, and exhibits a bonding strength that can withstand practical use without performing pressure treatment or heat treatment operation at a high temperature.
- the present invention provides a bonding material that can be stored even in a state where particles and a solvent are mixed.
- the inventors have intensively studied to solve these problems, and with the following bonding materials, even if a bonded body is formed in the above-described environment, it exhibits a strength that can withstand practical use and reduces bonding variation. We have found that this is possible and have completed the present invention.
- the bonding material of the present invention has an average primary particle diameter of 1 to 200 nm, is coated with an organic substance having 8 or less carbon atoms, and has silver nanoparticles and a dispersion medium having a boiling point of 230 ° C. or higher. Consists of.
- the bonding material of the present invention may further contain submicron silver particles having an average particle size of 0.5 to 3.0 ⁇ m.
- the dispersion medium having a boiling point of 230 ° C. or higher of the liquid used for the solvent is octanediol.
- the bonding material further contains an organic substance having at least two carboxyl groups as a flux component.
- the organic substance having at least two carboxyl groups further has an ether bond, and more preferably, the organic substance is oxydiacetic acid (diglycolic acid).
- At least one of the organic substances covering the surface of the silver nanoparticles has 6 carbon atoms.
- a joining method using the above joining material is provided. Specifically, silver nanoparticles coated with an organic material having at least an average primary particle diameter of 1 to 200 nm and having 8 or less carbon atoms, at least two carboxyl groups, and at least one ether bond are present on the bonding surface. A step of applying a bonding material containing a dispersed organic substance as a flux component and having a boiling point of 230 ° C.
- the preliminary firing and the main firing steps can be performed in an inert gas atmosphere.
- the main firing step can be performed at a temperature of 200 ° C. or higher and 500 ° C. or lower.
- the bonding material of the present invention includes silver nanoparticles and a dispersion medium.
- silver particles referred to as submicron silver particles
- Such a bonding material of the present invention has a paste-like form.
- the constituent components of the bonding material of the present invention are described in detail below.
- the bonding material of the present invention may be simply called “paste”.
- the silver nanoparticles used in the present invention are those having an average primary particle diameter of 200 nm or less, preferably 1 to 150 nm, more preferably 10 to 100 nm, calculated from a transmission electron microscope (TEM) photograph.
- TEM transmission electron microscope
- Evaluation of the average primary particle diameter with a transmission electron microscope was performed according to the following procedure. First, 2 parts by mass of the washed silver nanoparticles were added to a mixed solution of 96 parts by mass of cyclohexane and 2 parts by mass of oleic acid, and dispersed by ultrasonic waves to obtain a dispersion. Next, the dispersion solution was dropped onto a Cu microgrid with a support film and dried to obtain a TEM sample. Using the transmission electron microscope (JEM-100CXMark-II type manufactured by JEOL Ltd.), an image obtained by observing particles in a bright field at an acceleration voltage of 100 kV was taken at a magnification of 300,000 times. .
- JEM-100CXMark-II type manufactured by JEOL Ltd. an image obtained by observing particles in a bright field at an acceleration voltage of 100 kV was taken at a magnification of 300,000 times. .
- the average primary particle diameter of the particles can be determined by directly measuring with a caliper or the like from the photograph obtained by the above method, but can also be calculated by image software. At this time, the average primary particle size was measured by measuring at least 200 particles independently of each other in the TEM photograph and calculating the average number.
- the silver nanoparticles used in the present invention have the above particle diameter, and the surface is coated with an organic substance.
- this organic substance those having a total carbon number of 8 or less can be suitably used.
- those having 8 or less carbon atoms and having one or more carboxyl groups can be suitably used.
- Specific examples include the following substances, but are not limited to these substances. Examples include octanoic acid (caprylic acid), heptanoic acid (enanthic acid), hexanoic acid (caproic acid), pentanoic acid (valeric acid), butanoic acid (butyric acid), propanoic acid (propionic acid), which are saturated fatty acids. .
- dicarboxylic acid examples include oxalic acid, malonic acid, methylmalonic acid, ethylmalonic acid, succinic acid, methylsuccinic acid, ethylsuccinic acid, phenylsuccinic acid, glutaric acid, adipic acid, pimelic acid, and suberic acid.
- unsaturated fatty acids include sorbic acid and maleic acid.
- the silver nanoparticles can be present in the solvent in a stable state without causing dissolution in the solvent (dispersion medium).
- the state where the silver nanoparticles are stable in the solvent means that even if the silver nanoparticles and the solvent are mixed, solvent separation does not occur, and the solvent viscosity is 90 days at normal temperature immediately after preparation. It means that it is suppressed at a fluctuation rate of 20% or less compared with that after being left, and can be used.
- the production is easy and the silver nanoparticles can be obtained in the form of powder. That is, silver nanoparticles whose surface is coated with such a substance can be easily aggregated and recovered while maintaining the form of primary particles. Moreover, if a drying operation in a vacuum atmosphere is applied at a low temperature (less than 100 ° C.), it can be recovered as dry particles.
- the size of the agglomerates obtained at this time can be said to be 2.5 ⁇ m or more from the viewpoint that it can be collected at least with 5C filter paper of JISP-3801.
- the D 50 is 2.5 ⁇ m or more with respect to the size of the aggregate. This is because, if the D 50 value, the number of aggregates that passes unable filtered through filter paper, the recovery efficiency.
- the silver nanoparticle concerning this invention does not have a particle
- silver nanoparticles coated with molecules of this size for designing as a bonding material.
- These particles can be dissociated even if they are aggregated at the time of recovery, for example by preparing them under appropriate conditions as described in the examples of the present specification, and printed and applied with a dispenser or the like. Can also be obtained.
- submicron silver particles In addition to the above silver nanoparticles, if submicron silver particles of the order of submicron are added, it is possible to further contribute to improvement in bonding strength. Specifically, it is preferable to use submicron silver particles having an average particle size of 0.5 ⁇ m or more. Calculation of the average particle diameter in this specification was performed based on the laser diffraction method according to the following procedure. First, 0.3 g of a sample of submicron silver particles was placed in 50 mL of isopropyl alcohol, dispersed for 5 minutes with an ultrasonic cleaner with an output of 50 W, and then measured with a Microtrac particle size distribution analyzer (Honeywell-Nikkiso 9320-X100).
- the value of D 50 (cumulative 50% by mass particle size) measured by the laser diffraction method was defined as the average particle size.
- submicron silver particles having an average particle size in the range of 0.5 to 3.0 ⁇ m, preferably 0.5 to 2.5 ⁇ m, more preferably 0.5 to 2.0 ⁇ m are used in combination with silver nanoparticles. Therefore, it becomes possible to provide a bonded body having a high bonding force.
- the ratio of the metal component including silver nanoparticles and submicron silver particles in all components constituting the bonding material is at least 80% by mass, more preferably 85% by mass or more.
- This metal content range is preferable because the bonding strength can be secured when metallized.
- an upper limit is 95 mass%. When the metal content exceeds the upper limit value, the bonding strength is ensured, but it is not preferable because strength variation tends to occur.
- ⁇ Dispersion medium> In the bonding material in a paste state according to the present invention, silver nanoparticles are dispersed in a dispersion medium.
- a dispersion medium used at this time it is particularly preferable to use a solvent having a boiling point of 230 ° C. or higher, preferably 235 ° C. or less, which hardly causes evaporation.
- a solvent having a boiling point in such a range it is possible to reduce the occurrence of variations in the state of contact between the material to be joined and the paste in the joint portion because the solvent is volatilized in a stage prior to the main firing. I can do it. As a result, it is preferable because variation in strength at the joint can be reduced.
- the flash point should be 100 ° C. or higher, preferably 150 ° C. or higher, more preferably 200 ° C. or higher. If the flash point is too low, the solvent itself tends to volatilize, which is not preferable. By setting it as the said range, safety
- security can be ensured and it can be set as the paste suitable for handling.
- the solvent having the above properties is preferably a solvent having polarity.
- a substance having two or more hydroxyl groups, especially a diol having two hydroxyl groups, especially a diol having 8 or less carbon atoms it is possible to satisfy both the appropriate joint strength and the reduction in strength variation at the same time. It has been found.
- an organic substance as a flux component may be added to the bonding material according to the present invention.
- a dicarboxylic acid having at least two carboxyl groups more preferably a dicarboxylic acid having an ether bond and having at least two carboxyl groups.
- the flux component is also preferably decomposed into the simplest possible structure (specifically, the final form is carbon dioxide, water, etc.). Therefore, it is preferable that the organic material is composed only of elements such as carbon, hydrogen, and oxygen.
- the decomposition temperature is preferably at least the set temperature of the heat treatment. When the molecular weight is 1000 or less, preferably 500 or less, and more preferably 300 or less, decomposition or volatilization is more likely to occur, which is convenient for handling.
- the flux component examples include glycolic acid having a dicarboxylic acid structure.
- a high temperature is required for decomposition, which is not preferable. This is because it is desirable from the viewpoint of improving the bonding strength that the flux component is decomposed and evaporated after forming the bonded portion and not left in the bonded portion.
- the decomposition temperature is at least lower than the set temperature in the main firing. Specifically, a temperature of 500 ° C. or lower, more preferably 300 ° C. or lower is selected. However, in the case of a material that directly vaporizes without being decomposed, the “decomposition temperature” is read as “evaporation (vaporization) temperature”.
- the total number of carbon atoms in the molecular structure is at most 15 or less, preferably 10 or less.
- a structure having such a carbon number can be decomposed or evaporated even at a relatively low temperature such as the bonding temperature.
- ⁇ Dispersant> You may add the dispersing agent which disperse
- a dispersant By using such a dispersant, independence of particles can be ensured in the paste, and a paste having excellent storage stability can be provided.
- a commercially available product may be used as long as it has an affinity for the surface of the silver nanoparticles and also has an affinity for the dispersion medium.
- Dispersants having such properties include fatty acid salts (soap), ⁇ -sulfo fatty acid ester salts (MES), alkylbenzene sulfonates (ABS), linear alkylbenzene sulfonates (LAS), alkyl sulfates (AS), Low molecular weight anionic (anionic) compounds such as alkyl ether sulfate (AES) and alkyl sulfate triethanol, fatty acid ethanolamide, polyoxyethylene alkyl ether (AE), polyoxyethylene alkyl phenyl ether (APE), sorbitol, Low molecular weight nonionic compounds such as sorbitan, low molecular weight cationic (cationic) compounds such as alkyltrimethylammonium salt, dialkyldimethylammonium chloride, alkylpyridinium chloride, alkylcarboxyl Low molecular amphoteric compounds such as tine, sulfobetaine, lecithin,
- the viscosity of the bonding material thus formed can be appropriately changed by adjusting the type of solvent and the metal ratio. If the viscosity can be adjusted, it is considered that the printing method can be appropriately selected to contribute to the expansion of usable applications. This is because application to the joining target portion becomes easy. According to the study by the present inventors, it is about 10 to 250 Pa ⁇ s, preferably 10 to 100 Pa ⁇ s, more preferably about 10 to 50 Pa ⁇ s at normal temperature. In addition, this viscosity value is a value in C (cone) 35/2 at 25 rpm under 25 ° C conditions.
- the bonding material according to the present invention is provided through the following manufacturing method.
- silver nanoparticles as described in Japanese Patent No. 4344001 can be used as the silver nanoparticles.
- a flux component having the above-described properties, and optionally a dispersant are added to the above-described dispersion medium. Then, it introduce
- any known method can be employed under the condition that the mechanical dispersion treatment is not accompanied by significant modification of silver nanoparticles.
- Specific examples include ultrasonic dispersion, a disper, a three-roll mill, a ball mill, a bead mill, a twin-screw kneader, and a self-revolving stirrer, and these can be used alone or in combination.
- the bonding portion is formed by applying a bonding material to the bonding surface of the bonded material to a thickness of about 20 to 200 ⁇ m by, for example, a metal mask, a dispenser, or a screen printing method. Then, a to-be-joined object is stuck and a joining material is metallized by heat processing.
- the present bonding material can be metallized even by heat treatment in nitrogen, but can be metallized even by heat treatment in air.
- a bonded body can be formed without pressurizing the bonded object and the bonded object.
- the pressurizing step is not excluded. It may be preferable to add a step of pressurizing the bonded object and the bonded object because the bonding can be further strengthened.
- the pressurization was considered preferable from the viewpoint of reducing the dispersion and improving the bonding strength by setting the bonding portion to a high pressure so that bubbles are removed from the bonding portion.
- pressurization is not always necessary. Even when the pressure is applied as necessary, a sufficiently high bonding strength can be obtained with a pressure of about 5 MPa.
- Pre-baking step> When pressurizing using the paste (bonding material) according to the present invention to form a bonded body, it is preferable to perform metallization by multistage heat treatment. Specifically, the following steps are performed.
- the first stage firing (pre-firing step) aims to evaporate and remove the solvent added to the bonding material. However, if heat treatment is performed at an excessively high temperature, not only the solvent but also organic substances constituting the surface of the silver nanoparticles may be removed. In that case, it is not preferable because the bonding strength is lowered or quality variation occurs. Specifically, it is preferable to carry out at a temperature lower than the decomposition temperature of the silver nanoparticles.
- the decomposition temperature of the silver nanoparticles may vary greatly depending on the organic substance, dispersion medium, or additive covering the surface, it is preferable to know the thermal properties of the bonding material beforehand by TG measurement or the like. Generally, the temperature to be set as the pre-baking temperature is preferably set to a temperature lower by about 50 to 400 ° C. than the temperature set for the main baking. Further, although the time required for the preliminary firing depends on the bonding target area, it is sufficient if it is about 10 minutes, and in some cases, heating may be performed for about 30 seconds.
- a temperature raising step may be provided during the main baking step.
- the temperature rising rate at this time is preferably in the range of 0.5 to 10 ° C./second, preferably 0.5 to 5 ° C./second.
- the main baking is held at a temperature of 150 ° C. or more and 500 ° C. or less for 60 minutes or 30 minutes.
- the pressure to be applied may be 10 MPa or less, and in some cases, 5 MPa or less is sufficient.
- the joined body obtained by this can obtain remarkable crystal growth even under an inert atmosphere.
- the crystallite diameter on the Ag (111) plane calculated by the half-value width of X-rays is 65 nm or more. The larger this value is, the better because it indicates that no grain boundary is generated between the grains. More preferably, it has a property of 67 nm or more, more preferably 70 nm or more.
- Example 1 In a 500 mL beaker, 13.4 g of silver nitrate (manufactured by Toyo Chemical Co., Ltd.) was dissolved in 72.1 g of pure water to prepare a silver solution.
- a spherical silver particle powder (D2-made by DOWA Electronics Co., Ltd.) was prepared by using 45.0 g of dried sorbic acid-coated silver nanoparticle aggregate (average particle size: 60 nm) obtained through the above-described method as submicron silver particles.
- 1-C spherical silver powder average particle diameter (D 50 ) 600 nm) 45.0 g, octanediol (Kyowa Hakko Chemical Co., Ltd .: 2-ethyl-1,3-hexanediol) 9.0 g, burite as a wetting dispersant LCA-25NH (manufactured by Sanyo Kasei Co., Ltd.) 1.00 g (1.0% based on the total paste weight) was mixed and mixed with a kneading deaerator (V-mini300 type, manufactured by EME) for 30 seconds (kneading conditions / Revolution). ; 1400rpm, Rotation; 700rpm) After kneading, three rolls (EXAKT Apparatus Baus 228) At 1Norderstedt type), to prepare a bonding material paste be five times the path.
- the obtained bonding material was applied on the substrate by a printing method.
- the conditions at this time were a metal mask (mask thickness: 50 ⁇ m), the pattern was ⁇ 2 mm, 50 ⁇ m thickness, and it was applied onto a silver-plated copper substrate by manual printing with a metal squeegee.
- the boiling point of octanediol is 244 ° C., and the flash point is 135 ° C.
- Chip ( ⁇ 2 mm, thickness 2 mm copper substrate) was mounted on the coated surface.
- the mount product thus obtained is heated in a furnace (a table lamp heating device manufactured by ULVAC-RIKO Inc., MILA-5000 type) in a nitrogen atmosphere (oxygen concentration: 50 ppm or less) at 100 ° C. for 10 minutes, whereby a solvent (dispersion in the paste) The medium component was removed (pre-firing).
- a sample was printed at the same time by printing only the joining material on the substrate and firing without placing the chip on the joining material.
- the pre-fired sample was subsequently heated to 350 ° C. at a temperature increase rate of 1 ° C./second, and after reaching 350 ° C., a heat treatment was performed for 5 minutes to obtain a joined body (main firing). In this embodiment, no pressure is applied to both the preliminary firing and the final firing steps.
- the joining strength of the obtained joined body was confirmed. Specifically, it was performed in accordance with the method described in “Lead-free solder test method, Part 5 tensile and shear test method of solder joint” of JISZ-03918-5: 2003. That is, it is a method of measuring the force when the bonded surface breaks in such a way that the object to be bonded (chip) bonded on the substrate is pushed in the horizontal direction and cannot withstand the pressed force.
- a test was performed using a DAGE bond tester (series 4000). The shear height was 150 ⁇ m, the test speed was 5 mm / min, and the measurement was performed at room temperature. Moreover, the specific resistance of the fired film was measured by a four-probe method.
- the average shear strength among the five samples of Example 1 was 34.7 MPa, and the CV value (standard deviation / average value ⁇ 100) indicating the bonding variation was 14.1%.
- Example 2 The composition of the paste in Example 1 is 45.0 g of sorbic acid-coated silver nanoparticle aggregate dry powder (average particle size: 60 nm), sub-micron silver particles, spherical silver particle powder (D2-1-1 manufactured by DOWA Electronics Co., Ltd.) C spherical silver powder: average particle size (D 50 ) 600 nm) 45.0 g, octanediol (Kyowa Hakko Chemical Co., Ltd.) 8.9 g, oxydiacetic acid 0.10 g (0.1% with respect to the total paste weight), wet dispersion
- the procedure of Example 1 was repeated except that 1.00 g (1.0% based on the total paste weight) of Burelite LCA-25NH (manufactured by Sanyo Chemical Co., Ltd.) was mixed as an agent.
- the average shear strength between the five samples is 47.1 MPa, and the CV value indicating the bonding variation is 7.8%.
- a bonded body having higher bonding strength and lower variation can be obtained. It is like that.
- Example 3 The composition of the paste in Example 2 was 44.2 g of sorbic acid-coated silver nanoparticle aggregate dry powder, 44.2 g of spherical silver particle powder as submicron silver particles, and 10.5 g of octanediol (manufactured by Kyowa Hakko Chemical). The procedure of Example 3 was repeated in the same manner except for the above. Table 1 shows CV values indicating the bonding strength and variation of the obtained bonded body. In Table 1, materials that were not selected were shown as blanks. Moreover, it was confirmed that even if the paste according to this example was allowed to stand at room temperature for 90 days under hermetically sealed condition, there was no problem in use without causing separation of the paste or an extreme increase in viscosity.
- Example 4 The procedure of Example 1 was repeated with the same composition ratio except that the average particle size of the dried sorbic acid-coated silver nanoparticle aggregate dry powder was 100 nm. Table 1 shows CV values indicating the bonding strength and variation of the obtained bonded body. Moreover, it was confirmed that even if the paste according to this example was allowed to stand at room temperature for 90 days under hermetically sealed condition, there was no problem in use without causing separation of the paste or an extreme increase in viscosity.
- Example 5 The configuration of the paste in Example 4 was changed from 9.0 g of octanediol to 8.95 g of octanediol and 0.05 g of oxydiacetic acid (0.05% with respect to the total paste weight). The procedure was repeated. Table 1 shows CV values indicating the bonding strength and variation of the obtained bonded body. Moreover, it was confirmed that even if the paste according to this example was allowed to stand at room temperature for 90 days under hermetically sealed condition, there was no problem in use without causing separation of the paste or an extreme increase in viscosity.
- Example 6 The composition of the paste in Example 4 was 46.0 g of sorbic acid-coated silver nanoparticle aggregate dry powder, 46.0 g of spherical silver particle powder as submicron silver particles, and 7.0 g of octanediol (manufactured by Kyowa Hakko Chemical). The procedure of Example 4 was repeated in the same manner except for the above. Table 1 shows CV values indicating the bonding strength and variation of the obtained bonded body. Moreover, it was confirmed that even if the paste according to this example was allowed to stand at room temperature for 90 days under hermetically sealed condition, there was no problem in use without causing separation of the paste or an extreme increase in viscosity.
- Example 7 The composition of the paste in Example 4 is 43.0 g of sorbic acid-coated silver nanoparticle aggregate dry powder, 43.0 g of spherical silver particle powder as metal micron powder, 12.9 g of octanediol (manufactured by Kyowa Hakko Chemical) and oxydiacetic acid The procedure of Example 4 was repeated except that the amount was changed to 0.10 g (0.10% based on the total paste weight). Table 1 shows CV values indicating the bonding strength and variation of the obtained bonded body. Moreover, it was confirmed that even if the paste according to this example was allowed to stand at room temperature for 90 days under hermetically sealed condition, there was no problem in use without causing separation of the paste or an extreme increase in viscosity.
- Example 8 The paste in Example 4 was composed of 44.2 g of sorbic acid-coated silver nanoparticle aggregate dry powder, 44.2 g of spherical silver particle powder as submicron silver particles, 10.5 g of octanediol (manufactured by Kyowa Hakko Chemical Co., Ltd.) and Oxydi The procedure of Example 4 was repeated except that the amount was changed to 0.10 g of acetic acid (0.10% based on the total paste weight). Table 1 shows CV values indicating the bonding strength and variation of the obtained bonded body. Further, when the main firing temperature was 260 ° C.
- Example 1 The composition of the paste in Example 1 is 45.0 g of sorbic acid-coated silver nanoparticle aggregate dry powder (average particle size: 60 nm), sub-micron silver particles, spherical silver particle powder (D2-1-1 manufactured by DOWA Electronics Co., Ltd.) C spherical silver powder: The procedure of Example 1 was repeated except that 45.0 g of average particle diameter (D 50 ) 600 nm) and 9.00 g of terpineol (mixed structural isomer / Wako Pure Chemical Industries, Ltd.) were used. The average shear strength between the five samples was 25.5 MPa, and the CV value indicating bonding variation was 30.6%. Compared to Example 1, the bonding strength was low and the variation was large. Turpineol has a boiling point of 219 ° C. and a flash point of 91 ° C.
- Comparative Example 3 The terpineol (mixed structural isomers / manufactured by Wako Pure Chemical Industries, Ltd.) 9.00 g of Comparative Example 1 is 8.90 g of terpineol (mixed structural isomers / manufactured by Wako Pure Chemical Industries, Ltd.), 0.10 g of oxydiacetic acid. The procedure of Comparative Example 1 was repeated except that it was changed to 0.1% with respect to the total paste weight. Table 1 shows CV values indicating the bonding strength and variation of the obtained bonded body.
- Example 4 The procedure of Example 4 was repeated except that the octanediol of Example 4 was changed to terpineol (structural isomer mixture / Wako Pure Chemical Industries, Ltd.). Table 1 shows CV values indicating the bonding strength and variation of the obtained bonded body.
- FIG. 1 shows a graph showing the relationship between bonding strength (MPa) and variation (CV value (%)).
- the vertical axis represents the bonding strength (MPa), and the horizontal axis represents the CV value (%).
- Comparative Example 1 shows the effect due to the difference in particle diameter of silver nanoparticles (change from 60 nm to 100 nm). As a result, the bonding strength was slightly improved, and the strength variation between the bonded samples was reduced. Further, the comparison of Comparative Example 4 and Example 4 shows the effect of changing the solvent. The strength variation between the joined samples was the same, but the joint strength was remarkably improved. Further, it is clear from a comparison between Examples 4 and 5 that a part of octanediol was replaced with oxydiacetic acid to obtain a joined body with high joining strength and reduced variation.
- the bonding strength is as high as 30 MPa or more and the variation in bonding strength is less than 20% in spite of firing in nitrogen. It became clear. This contributes significantly to the improvement of product stability.
- Example 5 the viscosity was measured to be 71.5 MPa, and in Example 7, the viscosity was measured to be 28.5 MPa. It was found that a paste having an appropriate viscosity can be provided depending on the metal configuration. This indicates that it is possible to provide a paste having a viscosity corresponding to each printing method and printing condition, and it can be expected that the paste can be applied to bonding for all uses.
- FIG. 2 shows the storage stability of the examples and comparative examples.
- 2A shows the storage stability of Example 7
- FIG. 2B shows the storage stability of Comparative Example 2.
- the horizontal axis represents the number of days elapsed
- the vertical axis represents the viscosity. All samples are the results when 100 g of each bonding material is sealed in a glass bottle that can be covered, covered, and stored in an environment of normal temperature (25 ° C.) and high temperature (40 ° C.). In addition, the lid was sealed to the same extent as the packing state when usually being marketed.
- the viscosity was measured using a rheometer (Rheo Stress 600 manufactured by HAAKE) and a cone having a diameter of 35 mm and an angle of 2 °, a measurement gap of 0.105 mm, and a temperature of 25 ° C. / S].
- Example 7 In the case of Example 7 (FIG. 2 (a)), there is almost no change in viscosity even after 90 days. However, in the case of the comparative example (FIG. 2B), the viscosity changed greatly during 90 days.
- the boiling point of terpineol is 219 ° C., which is lower than the boiling point 244 ° C. of octanediol, but sufficiently higher than the ambient temperature.
- the viscosity changed greatly. This is not simply an increase in viscosity due to the removal of terpineol from the storage container, but an indication that octanediol is a material that provides stability to the composition system of the bonding material according to the present invention. It is done.
- the junction according to the present invention can be applied to non-insulated semiconductor devices, application to bare chip mounting assembly technology, power devices (IGBT, rectifier diode, power transistor, power MOSFET, insulated gate bipolar transistor, thyristor, gate turn-off silis, It can also be applied to the bonding process during the manufacture of TRIAC, and can also be used as a bonding material on glass with a chromed surface, and can also be used as a bonding material for electrodes and frames of lighting devices using LEDs. Is possible.
Abstract
Description
本発明で使用する銀ナノ粒子は、透過型電子顕微鏡(TEM)写真から算出される、平均一次粒子径で200nm以下、好ましくは1~150nm、一層好ましくは10~100nmのものが使用される。このような粒子径を有する銀ナノ粒子を使用することで、強い接合力を有した接合体を形成することができる。
上記の銀ナノ粒子に加えて、サブミクロンオーダーのサブミクロン銀粒子を添加すれば、より接合強度の向上に寄与できる。具体的には、平均粒径が0.5μm以上のサブミクロン銀粒子を使用することが好ましい。本明細書における平均粒径の算出は、以下の手順によりレーザー回折法に基づいて行った。まず、サブミクロン銀粒子の試料0.3gをイソプロピルアルコール50mLに入れ、出力50Wの超音波洗浄機で5分間分散させた後、マイクロトラック粒度分布測定装置(ハネウエル-日機装製の9320-X100)によってレーザー回折法で測定した際のD50(累積50質量%粒径)の値を平均粒径とした。この時の平均粒径の範囲が0.5~3.0μm、好ましくは0.5~2.5μm、一層好ましくは0.5~2.0μmのサブミクロン銀粒子を銀ナノ粒子と併用することで、接合力の高い接合体を提供することができるようになる。
本発明にかかるペースト態をした接合材では、銀ナノ粒子を分散媒に分散させる。この時に使用する分散媒は、特に沸点が230℃以上、好ましくは235℃以上である蒸発の起こりにくいものを使用することが好適である。沸点がこのような範囲の溶媒を使用することにより、本焼成よりも前段階において溶媒が揮発してしまい、接合部における被接合材とペーストの接触の状態にばらつきが生じることを低減することが出来る。結果として、接合部における強度ばらつきを低減させることが出来るようになるため好ましい。
なかでも、ヒドロキシル基を2つ以上有する物質、とりわけヒドロキシル基を二つ有するジオール、中でも炭素数8以下であるジオールとすることで、適切な接合強度と強度ばらつきの低減を同時に満足することが出来ることが判明した。
本発明にかかる接合材には上記の成分に加えてフラックス成分としての有機物を添加してもよい。具体的にはカルボキシル基を少なくとも二つ有したジカルボン酸、より好ましくはエーテル結合を有しかつカルボキシル基を少なくとも二つ有したジカルボン酸を選択するのがよい。こうした構造の物質を選択して添加することにより、窒素中で比較的低温での熱処理であっても有機物で被覆された銀ナノ粒子をバルク態の銀に変換できるようになる。
本発明にかかるペーストには銀ナノ粒子粉末をほどよく分散させる分散剤を添加してもよい。こうした分散剤を使用することで、ペースト中では粒子の独立性を確保し、保存安定性に優れたペーストを提供することができる。ただし、添加する物質によっては分散性がかえって悪化することがあるので、注意が必要である。その性質としては、銀ナノ粒子表面と親和性を有するとともに分散媒に対しても親和性を有するものであれば、市販汎用のものであっても足りる。また、単独の種類のみならず、併用使用しても構わない。この添加量は、ペースト全体に対して10質量%以下、好ましくは5質量%以下、一層好ましくは3質量%以下である。
本発明に従う接合材は、大凡下記のような製造方法を経て提供される。例えば、銀ナノ粒子としては特許第4344001号に記載されているような銀ナノ粒子を使用することができる。こうして得られた銀ナノ粒子と上述の性質を有するフラックス成分と、場合により分散剤を、上述の分散媒へ添加する。その後、混練脱泡機へ導入して該成分の混練物を作製する。その後、場合によって機械的分散処理を行ってペーストを形成させる。
接合部の形成は、接合物の接合面に例えばメタルマスク、ディスペンサーもしくはスクリーン印刷法により、厚みとして20~200μm程度に接合材を塗布する。その後、被接合物を貼付して、加熱処理により接合材を金属化する。本接合材であれば、窒素中での加熱処理であっても金属化できうるが、大気中での加熱処理であっても金属化することができる。
本発明に従うペースト(接合材)を用いて加圧を行い接合体を形成する場合には、多段熱処理による金属化を行うことが好ましい。詳細には次のような工程を経るようにする。第一段階の焼成(予備焼成工程)は、接合材に添加している溶媒を蒸発除去させることを目的とする。ただ、あまりにも高温にて熱処理を施すと、溶媒のみならず銀ナノ粒子表面を構成する有機物まで除去してしまうことがある。その場合、接合強度が低くなる、あるいは品質のばらつきを生じるようになるため好ましくない。具体的には、銀ナノ粒子の分解温度未満の温度で行うのがよい。
予備焼成を行う場合には予備焼成を経た後、予備焼成を伴わない場合には塗布直後に本焼成工程により、ペーストを完全に金属化する。本焼成工程に至る間に昇温工程を備えてもよい。この時の昇温速度は0.5~10℃/秒、好ましくは0.5~5℃/秒の範囲とすることが好ましい。
500mLビーカーへ硝酸銀(東洋化学株式会社製)13.4gを純水72.1gへ溶解させ、銀溶液を作製した。
実施例1におけるペーストの構成を、ソルビン酸被覆銀ナノ粒子凝集体乾燥粉(平均粒子径:60nm)45.0g、サブミクロン銀粒子として、球状銀粒子粉末(DOWAエレクトロニクス株式会社製D2-1-C球状銀粉末:平均粒子径(D50)600nm)45.0g、オクタンジオール(協和発酵ケミカル社製)8.9g、オキシジ酢酸0.10g(全ペースト重量に対し0.1%)、湿潤分散剤としてビューライトLCA-25NH(三洋化成株式会社製)1.00g(全ペースト重量に対し、1.0%)を混合した以外は実施例1の手順を繰り返した。5サンプル間の平均シェア強度は47.1MPa、接合ばらつきを示すCV値は7.8%であり、実施例1に比較して、高い接合強度と低いばらつきを有した接合体を得ることが出来るようになっている。また、本実施例にかかるペーストを密閉条件下、常温で90日放置してもペーストの分離や粘度の極端な上昇は生じることなく、使用に問題ないことは確認された。
実施例2におけるペーストの構成を、ソルビン酸被覆銀ナノ粒子凝集体乾燥粉44.2g、サブミクロン銀粒子として球状銀粒子粉末44.2g、オクタンジオール(協和発酵ケミカル社製)10.5gとした以外は同様にして、実施例3の手順を繰り返した。得られた接合体の接合強度及びばらつきを示すCV値を表1に示す。なお、表1では、選択されなかった材料はブランクで表した。また、本実施例にかかるペーストを密閉条件下、常温で90日放置してもペーストの分離や粘度の極端な上昇は生じることなく、使用に問題ないことは確認された。
実施例1におけるペーストの構成を、ソルビン酸被覆銀ナノ粒子凝集体乾燥粉の平均粒子径を100nmのものとした以外は、同じ構成割合とし実施例1の手順を繰り返した。得られた接合体の接合強度及びばらつきを示すCV値を表1に示す。また、本実施例にかかるペーストを密閉条件下、常温で90日放置してもペーストの分離や粘度の極端な上昇は生じることなく、使用に問題ないことは確認された。
実施例4におけるペーストの構成を、オクタンジオール9.0gとあるのをオクタンジオール8.95gとオキシジ酢酸0.05g(全ペースト重量に対し0.05%)に変更した以外は、実施例4の手順を繰り返した。得られた接合体の接合強度及びばらつきを示すCV値を表1に示す。また、本実施例にかかるペーストを密閉条件下、常温で90日放置してもペーストの分離や粘度の極端な上昇は生じることなく、使用に問題ないことは確認された。
実施例4におけるペーストの構成を、ソルビン酸被覆銀ナノ粒子凝集体乾燥粉46.0g、サブミクロン銀粒子として球状銀粒子粉末46.0g、オクタンジオール(協和発酵ケミカル社製)7.0gとした以外は同様にして、実施例4の手順を繰り返した。得られた接合体の接合強度及びばらつきを示すCV値を表1に示す。また、本実施例にかかるペーストを密閉条件下、常温で90日放置してもペーストの分離や粘度の極端な上昇は生じることなく、使用に問題ないことは確認された。
実施例4におけるペーストの構成を、ソルビン酸被覆銀ナノ粒子凝集体乾燥粉43.0g、金属ミクロン粉として球状銀粒子粉末43.0g、オクタンジオール(協和発酵ケミカル社製)12.9gとオキシジ酢酸0.10g(全ペースト重量に対し0.10%)に変更した以外は、実施例4の手順を繰り返した。得られた接合体の接合強度及びばらつきを示すCV値を表1に示す。また、本実施例にかかるペーストを密閉条件下、常温で90日放置してもペーストの分離や粘度の極端な上昇は生じることなく、使用に問題ないことは確認された。
実施例4におけるペーストの構成を、ソルビン酸被覆銀ナノ粒子凝集体乾燥粉44.2g、サブミクロン銀粒子として球状銀粒子粉末44.2g、オクタンジオール(協和発酵ケミカル社製)10.5gとオキシジ酢酸0.10g(全ペースト重量に対し0.10%)に変更した以外は、実施例4の手順を繰り返した。得られた接合体の接合強度及びばらつきを示すCV値を表1に示す。また、本焼成の温度を260℃とし10分間の加熱をした場合では、接合強度22.1MPaでCV値は22.4%の結果が得られた。また、本実施例にかかるペーストを密閉条件下、常温で90日放置してもペーストの分離や粘度の極端な上昇は生じることなく、使用に問題ないことは確認された。
実施例1におけるペーストの構成を、ソルビン酸被覆銀ナノ粒子凝集体乾燥粉(平均粒子径:60nm)45.0g、サブミクロン銀粒子として、球状銀粒子粉末(DOWAエレクトロニクス株式会社製D2-1-C球状銀粉末:平均粒子径(D50)600nm)45.0g、ターピネオール(構造異性体混合/和光純薬工業株式会社製)9.00gとした以外は実施例1の手順を繰り返した。5サンプル間の平均シェア強度は25.5MPa、接合ばらつきを示すCV値は30.6%であり、実施例1に比較して、接合強度が低く、ばらつきが大きい接合体となっていた。なお、ターピネオールの沸点は219℃、引火点は91℃である。
比較例1のターピネオール(構造異性体混合/和光純薬工業株式会社製)9.00gとあるのをターピネオール(構造異性体混合/和光純薬工業株式会社製)8.80g、オキシジ酢酸0.20g(全ペースト重量に対し0.2%)とした以外は比較例1の手順を繰り返した。得られた接合体の接合強度及びばらつきを示すCV値を表1に示す。
比較例1のターピネオール(構造異性体混合/和光純薬工業株式会社製)9.00gとあるのをターピネオール(構造異性体混合/和光純薬工業株式会社製)8.90g、オキシジ酢酸0.10g(全ペースト重量に対し0.1%)とした以外は比較例1の手順を繰り返した。得られた接合体の接合強度及びばらつきを示すCV値を表1に示す。
実施例4のオクタンジオールをターピネオール(構造異性体混合/和光純薬工業株式会社製)に変更した以外は実施例4の手順を繰り返した。得られた接合体の接合強度及びばらつきを示すCV値を表1に示す。
Claims (10)
- 平均一次粒子径が1~200nmであって、炭素数8以下の有機物質で被覆され、かつ銀ナノ粒子と、沸点が230℃以上の分散媒からなる接合材。
- 平均粒径が0.5~3.0μmのサブミクロン銀粒子をさらに含む、請求項1に記載の接合材。
- 前記沸点が230℃以上の分散媒がオクタンジオールである、請求項1または2に記載の接合材。
- 前記接合材にはさらに少なくとも2つのカルボキシル基を有した有機物をフラックス成分として含有する、請求項1ないし3のいずれかに記載の接合材。
- 前記少なくとも2つのカルボキシル基を有した有機物が、さらにエーテル結合を有する、請求項4に記載の接合材。
- 前記少なくとも2つのカルボキシル基を有した有機物が、オキシジ酢酸である、請求項4または5のいずれかに記載の接合材。
- 前記銀ナノ粒子の表面を被覆する有機物のうち、少なくとも一つが炭素数が6である、請求項1ないし6のいずれかに記載の接合材。
- 接合面に少なくとも平均一次粒子径が1~200nmであって、炭素数8以下の有機物質で被覆された銀ナノ粒子と、少なくとも2つのカルボキシル基と少なくとも1つのエーテル結合を有した有機物をフラックス成分として含有し、沸点が230℃以上の分散媒とからなる接合材を塗布する工程(塗布工程)と、前記接合材の上に被接合物を配置する工程と、前記被接合物が配置された状態で所定の温度に加熱する予備焼成の工程と、前記予備焼成の温度より高い温度に加熱する本焼成の工程を備える、異なる二物質の接合方法。
- 前記予備焼成および前記本焼成の工程を不活性ガス雰囲気下にて行う、請求項8に記載の接合方法。
- 前記本焼成の工程は200℃以上500℃以下の温度で行う、請求項8または9のいずれかに記載の接合方法。
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005025787A1 (ja) * | 2003-09-12 | 2005-03-24 | National Institute Of Advanced Industrial Science And Technology | 微細な液滴の形状で噴射し、積層塗布可能な金属ナノ粒子分散液 |
JP2006241494A (ja) * | 2005-03-01 | 2006-09-14 | Dowa Mining Co Ltd | 銀粒子粉末およびその製造法 |
JP2007042301A (ja) * | 2005-07-29 | 2007-02-15 | Toda Kogyo Corp | 導電性組成物、導電性ペースト及び導電性皮膜 |
JP2007095525A (ja) * | 2005-09-29 | 2007-04-12 | Tokai Rubber Ind Ltd | 導電性ペースト |
JP2009007593A (ja) * | 2007-06-26 | 2009-01-15 | Furukawa Electric Co Ltd:The | 微粒子分散液、及び微粒子分散液の製造方法 |
WO2009116185A1 (ja) | 2008-03-18 | 2009-09-24 | 株式会社応用ナノ粒子研究所 | 複合銀ナノペースト、その製法、接合方法及びパターン形成方法 |
JP4344001B2 (ja) | 2007-10-24 | 2009-10-14 | Dowaエレクトロニクス株式会社 | 微小銀粒子含有組成物、その製造方法、微小銀粒子の製造方法および微小銀粒子を有するペースト |
JP2009267374A (ja) | 2008-03-31 | 2009-11-12 | Hitachi Ltd | 半導体装置及び接合材料 |
JP2009279649A (ja) | 2008-04-23 | 2009-12-03 | Toyota Motor Corp | 接合材料及び接合材料の成分算出方法 |
WO2010018782A1 (ja) * | 2008-08-11 | 2010-02-18 | 地方独立行政法人大阪市立工業研究所 | 銅系ナノ粒子及びその製造方法 |
JP2010080438A (ja) * | 2008-08-28 | 2010-04-08 | Mitsuboshi Belting Ltd | 導電性基材およびその前駆体並びにその製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003051562A1 (fr) * | 2001-12-18 | 2003-06-26 | Asahi Kasei Kabushiki Kaisha | Dispersion d'oxyde metallique |
WO2004026526A1 (en) * | 2002-09-18 | 2004-04-01 | Ebara Corporation | Bonding material and bonding method |
US20050136638A1 (en) * | 2003-12-18 | 2005-06-23 | 3M Innovative Properties Company | Low temperature sintering nanoparticle compositions |
CN100586613C (zh) * | 2004-06-25 | 2010-02-03 | 三菱麻铁里亚尔株式会社 | 金属胶体粒子、金属胶体和金属胶体的用途 |
JP5007020B2 (ja) * | 2004-12-20 | 2012-08-22 | 株式会社アルバック | 金属薄膜の形成方法及び金属薄膜 |
WO2008013199A1 (en) | 2006-07-28 | 2008-01-31 | The Furukawa Electric Co., Ltd. | Fine particle dispersion and method for producing fine particle dispersion |
KR101375403B1 (ko) | 2006-07-28 | 2014-03-17 | 후루카와 덴키 고교 가부시키가이샤 | 미립자 분산액의 제조방법, 및 미립자 분산액 |
JP4963393B2 (ja) * | 2006-10-03 | 2012-06-27 | 三ツ星ベルト株式会社 | 低温焼成型銀ペースト |
KR101334052B1 (ko) * | 2007-01-09 | 2013-11-29 | 도와 일렉트로닉스 가부시키가이샤 | 은 입자 분산액 및 그 제조법 |
US7422707B2 (en) * | 2007-01-10 | 2008-09-09 | National Starch And Chemical Investment Holding Corporation | Highly conductive composition for wafer coating |
US20080272344A1 (en) * | 2007-03-23 | 2008-11-06 | Georgia Tech Research Corporation | Conductive polymer composites |
US7576434B2 (en) * | 2007-06-26 | 2009-08-18 | Intel Corporation | Wafer-level solder bumps |
JP4986745B2 (ja) * | 2007-07-05 | 2012-07-25 | Dowaエレクトロニクス株式会社 | 銀ペースト |
WO2009090748A1 (ja) | 2008-01-17 | 2009-07-23 | Applied Nanoparticle Laboratory Corporation | 複合銀ナノ粒子、その製法及び製造装置 |
US7935278B2 (en) * | 2009-03-05 | 2011-05-03 | Xerox Corporation | Feature forming process using acid-containing composition |
KR101623449B1 (ko) | 2009-07-14 | 2016-05-23 | 도와 일렉트로닉스 가부시키가이샤 | 금속 나노 입자를 이용한 접합재 및 접합 방법 |
JP4928639B2 (ja) | 2010-03-15 | 2012-05-09 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
US9240256B2 (en) | 2010-03-15 | 2016-01-19 | Dowa Electronics Materials Co., Ltd. | Bonding material and bonding method using the same |
-
2010
- 2010-06-11 WO PCT/JP2010/059921 patent/WO2011155055A1/ja active Application Filing
- 2010-11-19 TW TW099139896A patent/TW201143960A/zh unknown
-
2011
- 2011-06-10 WO PCT/JP2011/063418 patent/WO2011155615A1/ja active Application Filing
- 2011-06-10 EP EP11792572.7A patent/EP2581156B1/en active Active
- 2011-06-10 US US13/702,718 patent/US8641929B2/en active Active
- 2011-06-10 KR KR1020127033853A patent/KR101709302B1/ko active IP Right Grant
- 2011-06-10 CN CN201180028565.5A patent/CN102958631B/zh active Active
- 2011-06-13 TW TW100120513A patent/TWI504704B/zh active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005025787A1 (ja) * | 2003-09-12 | 2005-03-24 | National Institute Of Advanced Industrial Science And Technology | 微細な液滴の形状で噴射し、積層塗布可能な金属ナノ粒子分散液 |
JP2006241494A (ja) * | 2005-03-01 | 2006-09-14 | Dowa Mining Co Ltd | 銀粒子粉末およびその製造法 |
JP2007042301A (ja) * | 2005-07-29 | 2007-02-15 | Toda Kogyo Corp | 導電性組成物、導電性ペースト及び導電性皮膜 |
JP2007095525A (ja) * | 2005-09-29 | 2007-04-12 | Tokai Rubber Ind Ltd | 導電性ペースト |
JP2009007593A (ja) * | 2007-06-26 | 2009-01-15 | Furukawa Electric Co Ltd:The | 微粒子分散液、及び微粒子分散液の製造方法 |
JP4344001B2 (ja) | 2007-10-24 | 2009-10-14 | Dowaエレクトロニクス株式会社 | 微小銀粒子含有組成物、その製造方法、微小銀粒子の製造方法および微小銀粒子を有するペースト |
WO2009116185A1 (ja) | 2008-03-18 | 2009-09-24 | 株式会社応用ナノ粒子研究所 | 複合銀ナノペースト、その製法、接合方法及びパターン形成方法 |
JP2009267374A (ja) | 2008-03-31 | 2009-11-12 | Hitachi Ltd | 半導体装置及び接合材料 |
JP2009279649A (ja) | 2008-04-23 | 2009-12-03 | Toyota Motor Corp | 接合材料及び接合材料の成分算出方法 |
WO2010018782A1 (ja) * | 2008-08-11 | 2010-02-18 | 地方独立行政法人大阪市立工業研究所 | 銅系ナノ粒子及びその製造方法 |
JP2010080438A (ja) * | 2008-08-28 | 2010-04-08 | Mitsuboshi Belting Ltd | 導電性基材およびその前駆体並びにその製造方法 |
Non-Patent Citations (2)
Title |
---|
MORITA ET AL.: "Development of Lead-Free Bonding Technique for High Temperature Environment Using Micrometer-Sized Silver Oxide Particles", MATERIA JAPAN, vol. 49, no. 1, 2010 |
See also references of EP2581156A4 |
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012119132A (ja) * | 2010-11-30 | 2012-06-21 | Harima Chemicals Inc | 導電性金属ペースト |
KR101609497B1 (ko) | 2012-01-20 | 2016-04-05 | 도와 일렉트로닉스 가부시키가이샤 | 접합재 및 그것을 이용한 접합 방법 |
CN104066534A (zh) * | 2012-01-20 | 2014-09-24 | 同和电子科技有限公司 | 接合材料及使用其的接合方法 |
TWI566859B (zh) * | 2012-01-20 | 2017-01-21 | Dowa Electronics Materials Co | A bonding material and a joining method using the same |
US9533380B2 (en) | 2012-01-20 | 2017-01-03 | Dowa Electronics Materials Co., Ltd. | Bonding material and bonding method in which said bonding material is used |
JP2014047415A (ja) * | 2012-09-03 | 2014-03-17 | Dowa Electronics Materials Co Ltd | 導電膜形成用銀粉、導電性ペーストおよび導電膜の形成方法 |
WO2014038331A1 (ja) * | 2012-09-05 | 2014-03-13 | 日立化成株式会社 | 銀ペースト組成物及びそれを用いた半導体装置 |
US10201879B2 (en) | 2012-09-05 | 2019-02-12 | Hitachi Chemical Company, Ltd. | Silver paste composition and semiconductor device using same |
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JP2015206108A (ja) * | 2013-12-10 | 2015-11-19 | Dowaエレクトロニクス株式会社 | 銀微粒子分散液 |
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Also Published As
Publication number | Publication date |
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EP2581156A4 (en) | 2015-02-25 |
TW201213473A (en) | 2012-04-01 |
EP2581156B1 (en) | 2016-06-01 |
EP2581156A1 (en) | 2013-04-17 |
US20130081759A1 (en) | 2013-04-04 |
KR20130101986A (ko) | 2013-09-16 |
CN102958631B (zh) | 2015-08-05 |
CN102958631A (zh) | 2013-03-06 |
TWI504704B (zh) | 2015-10-21 |
WO2011155055A1 (ja) | 2011-12-15 |
TW201143960A (en) | 2011-12-16 |
KR101709302B1 (ko) | 2017-02-22 |
US8641929B2 (en) | 2014-02-04 |
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