TWI504704B - Low temperature sintered bonding material and bonding method using the same - Google Patents
Low temperature sintered bonding material and bonding method using the same Download PDFInfo
- Publication number
- TWI504704B TWI504704B TW100120513A TW100120513A TWI504704B TW I504704 B TWI504704 B TW I504704B TW 100120513 A TW100120513 A TW 100120513A TW 100120513 A TW100120513 A TW 100120513A TW I504704 B TWI504704 B TW I504704B
- Authority
- TW
- Taiwan
- Prior art keywords
- silver
- bonding
- adhesive
- adhesive material
- acid
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J1/00—Adhesives based on inorganic constituents
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2303/00—Functional details of metal or compound in the powder or product
- B22F2303/10—Optional alloy component
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0224—Conductive particles having an insulating coating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/0257—Nanoparticles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Description
本發明係關於黏合材料及使用該黏合材料之黏合方法。
隨著用於汽車及產業機器之電子零件的大電流化,其內部所使用之半導體的動作溫度有變成高溫的傾向。因此,越來越迫切期望可承受此種高溫的環境之黏合材料。以往,已使用在高溫維持強度之含鉛焊接,但由於目前的抑制鉛使用之趨勢,越來越迫切期望提供適合此種條件的黏合方法。
在不使用鉛之情況下,作為可承受此種要求的黏合方法之候補,經由相較於塊狀(bulk state)的銀可在更低溫的條件下黏合之銀奈米粒子的黏合方法目前正逐漸受到注目。此種潮流中,已提案有例如:將氧化銀粒子與肉豆蔻醇混合而成為黏合材料之方法(非專利文獻1及專利文獻1);此外,在混合有碳酸銀或氧化銀、與銀奈米粒子之物中添加羧酸而製成黏合材料之方法(專利文獻2);揭示經來自醇的烷氧化物所被覆之銀奈米粒子係可利用作為黏合材料(專利文獻3)。
專利文獻1:日本專利特開2009-267374號公報
專利文獻2:日本專利特開2009-279649號公報
專利文獻3:國際專利公開WO2009/116185號說明書
非專利文獻1:守田等,「使用微米尺寸之氧化銀粒子的對於高溫環境之無鉛黏合技術的開發」,Materia,第49卷,第1號(2010)
如在非專利文獻1所記載之技術等中亦有所記載,通常此種利用銀的黏合方法中,有不少在黏合時必須從上部等進行加壓。為了應用此種技術,係需要至少可同時進行加壓及加熱的裝置,就泛用性而言可說有一點困難。又,亦有無法使用僅具有不可耐加壓程度的機械強度之素材的問題。因此,若能提供即便不進行加壓亦發揮適當黏合力的糊劑,便可期待使用對象能夠大幅度變廣。
又,關於形成黏合劑時的環境,通常係在所謂大氣中之含氧的氧化環境中進行,因此,會有對黏合力有造成不良影響的可能性之界面部的銀因氧化而變化成氧化銀之疑慮。特別是,在微細的黏合體中,認為此種影響係在黏合強度等方面變得顯著。又,作為黏合對象,亦考慮可燃性構件存在於黏合部分附近之情況,且亦考慮必須積極地在無氧環境中進行黏合的情況。
因此,若能提供可排除此種影響之在諸如氮的惰性氣體環境下發揮充分黏合力之黏合材料,便可期待此種糊劑的利用領域及可能性亦能大幅度地變廣。又,在要求品質的安定性及可靠性之用途中,亦必須減低試樣(製品)間的黏合強度變異。
又,藉由專利文獻3所記載之技術,雖然可形成黏合體,但在保存安定性方面卻有困難。亦即,如專利文獻3之段落[0077]所述,其揭示若溶媒的添加並非在即將使用之前進行,則由於發生粒子凝集,故較難以金屬(銀)奈米粒子與溶劑一體化之糊劑形式提供,被認為實用性較低。
於是,本發明係提供可在諸如氮的惰性氣體中形成黏合體,且即便不進行藉由加壓或高溫的熱處理操作亦發揮可耐實用的黏合強度,同時,試樣間的黏合變異減低,且即便以使粒子與溶媒混合之狀態亦可進行保存之黏合材料。
本發明者等人為了解決此種課題而進行深入檢討,結果發現,若為以下所示之黏合材料,則即便是在上述環境下形成黏合體,亦發揮可耐實用之強度,且可減低黏合變異,因而完成本案發明。
更具體而言,本發明之黏合材料係由下列者所構成:平均初級粒徑為1~200nm,且經碳數8以下之有機物質所被覆之銀奈米粒子;及沸點為230℃以上的分散媒。
又,本發明之黏合材料亦可進一步包含平均粒徑為0.5~3.0μm之次微米銀粒子。
又,用於溶媒的液體之沸點為230℃以上的分散媒較佳係辛二醇。
再者,黏合材料適宜進一步含有具有至少2個羧基的有機物,作為助熔劑成分。
此外,具有至少2個羧基的有機物可進一步具有醚鍵結,更佳為該有機物係氧二乙酸(diglycolic acid)。
再者,較佳為被覆銀奈米粒子表面的有機物中,至少一者係碳數為6。
又,本發明中,係提供使用上述黏合材料之黏合方法。具體而言,係一種相異的二物質之黏合方法,其具備下述步驟:至少在黏合面塗佈黏合材料的步驟(塗佈步驟),該黏合材料係由平均初級粒徑為1~200nm且經碳數8以下之有機物質所被覆之銀奈米粒子、含有具有至少2個羧基及至少一個醚鍵結的有機物作為助熔劑成分、及沸點為230℃以上的分散媒所構成;在上述黏合材料上配置被黏合物的步驟;以配置有上述被黏合物之狀態加熱至指定溫度的預煅燒步驟;以及加熱至高於上述預煅燒溫度之溫度的主要煅燒步驟。
又,本發明之黏合方法中,係可在惰性氣體環境下進行上述預煅燒及上述主要煅燒步驟。
又,本發明之黏合方法中,上述主要煅燒步驟係可在200℃以上且500℃以下之溫度進行。
藉由使用如上述之黏合材料,即便在惰性氣體環境中進行加熱之情況,亦可獲得具有高黏合強度,且試樣間的黏合強度變異減低之黏合體。
本發明之黏合材料係包含銀奈米粒子及分散媒。又,較佳亦可進一步包含次微米等級的較大銀粒子(稱為次微米銀粒子)。此種本發明之黏合材料係呈糊狀形態。以下係詳細說明本發明之黏合材料的構成成分。另外,本發明之黏合材料亦可僅稱為「糊劑」。
本發明所使用之銀奈米粒子,係使用經由穿透型電子顯微鏡(TEM)照片所算出之平均初級粒徑為200nm以下,較佳為1~150nm,更佳為10~100nm者。藉由使用具有此種粒徑之銀奈米粒子,可形成具有強黏合力之黏合體。
藉由穿透型電子顯微鏡所進行的平均初級粒徑評估係根據以下程序進行。首先,將洗淨後之銀奈米粒子2質量份添加至環己烷96質量份與油酸2質量份之混合溶液中,並藉由超音波予以分散而獲得分散液。其次,將分散溶液滴至附有支持膜之Cu微網(microgrid),使其乾燥,而獲得TEM試樣。針對所製作之TEM試樣,使用穿透型電子顯微鏡(日本電子股份有限公司製JEM-100CXMark-II型),在100kV的加速電壓,將以明視野觀察粒子的影像以300,000倍進行攝影。
粒子的平均初級粒徑係可由上述方法所獲得之照片,以直接卡尺等進行測定而求得,亦可藉由影像軟體算出。此時的平均初級粒徑,係針對TEM照片中的個別獨立粒子,測定至少200個,並算出其數量平均。
本發明所使用之銀奈米粒子係具有上述粒徑,並且以有機物覆蓋表面。該有機物可適當使用總碳數為8以下者。特別是,可適當使用碳數為8以下,且具有1個以上羧基者。具體而言,可例示下列物質,但並非僅限定此等物質。例如,可列舉屬於飽和脂肪酸之辛酸(caprylic acid)、庚酸(enanthic acid)、己酸(caproic acid)、戊酸(valeric acid)、丁酸(butyric acid)、丙酸(propionic acid)等。又,作為二羧酸,可列舉草酸、丙二酸、甲基丙二酸、乙基丙二酸、丁二酸、甲基丁二酸、乙基丁二酸、苯基丁二酸、戊二酸、己二酸、庚二酸、辛二酸等。不飽和脂肪酸係可列舉山梨酸、馬來酸等。
又,藉由經此等有機物被覆粒子表面,銀奈米粒子即便在溶媒(分散媒)中,亦不會引起溶解等,而能夠以安定狀態存在於溶媒中。藉由具有此種性質,便可消除對糊劑的保存安定性造成影響之因素,而可在無須如專利文獻3之記載般在即將使用之前加入溶媒之情況下,獲得安定的糊劑。另外,此處所謂「銀奈米粒子在溶媒中呈安定狀態」,係意指即便將銀奈米粒子與溶媒作成混合狀態時,亦不會發生溶媒分離等,且比較在調製後即刻與在常溫放置90天後,溶媒黏度係被抑制在20%以內之變動率,而能夠維持可使用之狀態。
上述之中,特別是若藉由己酸、庚酸、己二酸、山梨酸、丙二酸被覆銀奈米粒子表面,則製造容易且能夠以粉末形態獲得銀奈米粒子。即,表面經此種物質所被覆之銀奈米粒子係保有初級粒子的形態,並且可予以凝集而輕易回收。又,若根據低溫(未滿100℃)之情況而在真空環境中加入乾燥操作,便能夠以乾燥粒子之形式進行回收。此時所獲得之凝集塊的大小,由至少可藉由JISP-3801之5C濾紙進行回收的觀點而言,可認為係2.5μm以上。
此情況中,針對凝集塊的大小,並非意味其D50
為2.5μm以上。此乃由於,若為D50
值,則無法藉由濾紙過濾而通過的凝集塊變多,回收效率變差。然而,本發明之銀奈米粒子並非2.5μm以下的大小之粒子,故確認到可獲得澄清的濾液而沒有濾液懸濁之情形。即,亦可解釋為經己酸、庚酸、己二酸、山梨酸、丙二酸被覆之銀奈米粒子係成為並非是平均值而是至少具有2.5μm左右的大小之凝集塊。因此,就設計作為黏合材料而言,較佳係使用經此種程度大小的分子所被覆之銀奈米粒子。此外,該粒子係藉由例如依本案說明書之實施例所記載般的適切條件進行調製,而可獲得在回收時使即便已成為凝集塊者亦解離,且亦可利用分散機等進行印刷塗佈之黏合材料。
又,亦可使用由複數有機物所被覆之銀奈米粒子,或併用具有不同平均初級粒徑的銀奈米粒子。
除了上述銀奈米粒子以外,若添加次微米等級的次微米銀粒子,可更加有助於黏合強度的提升。具體而言,較佳係使用平均粒徑為0.5μm以上的次微米銀粒子。本案說明書中之平均粒徑的算出,係藉由以下程序,基於雷射繞射法而進行。首先,將次微米銀粒子之試樣0.3g置入異丙醇50mL中,以輸出50W的超音波洗淨機分散5分鐘後,藉由Microtrack粒度分佈測定裝置(Honeywell-日機裝製之9320-X100)以雷射繞射法進行測定時之D50
(累積50質量%粒徑)之值係設為平均粒徑。藉由將此時之平均粒徑範圍為0.5~3.0μm,較佳為0.5~2.5μm,更佳為0.5~2.0μm的次微米銀粒子與銀奈米粒子併用,可提供黏合力高的黏合體。
此時,構成黏合材料的總成分中包含銀奈米粒子與次微米銀粒子之金屬成分比例可至少為80質量%以上,更佳為85質量%以上。若設成此種金屬含量範圍,則在金屬化時可確保黏合強度,故而較佳。又,上限值為95質量%。在金屬含量超過上限值之情況,雖可確保黏合強度,但有易於產生強度變異之傾向,故而不佳。
本發明之作成糊態的黏合材料中,係使銀奈米粒子分散於分散媒。此時所使用之分散媒,特別適宜使用沸點為230℃以上,較佳235℃以上之難以引起蒸發者。藉由使用沸點為此種範圍的溶媒,可減低在比主要煅燒更前面的階段中溶媒揮發,而對黏合部中的被黏合材料與糊劑之接觸狀態產生變異之情形。結果,可減低黏合部中的強度變異,故而較佳。
再者,若溶媒為有機溶媒,則可設成燃點為100℃以上,較佳150℃以上,更佳200℃以上者。在燃點過低之情況中,該溶媒本身容易揮發,故而不佳。藉由設成上述範圍,係確保安全性,且可作成適於操作的糊劑。
作為具有上述性質之溶媒,較佳係設成具有極性之溶媒。
其中,已證實藉由設成具有2個以上羥基之物質,尤其是具有2個羥基之二醇中,甚至碳數8以下之二醇,則可同時滿足適切的黏合強度及強度變異的減低。
本發明之黏合材料中,除了上述成分以外,亦可添加作為助熔劑成分之有機物。具體而言,可選擇具有至少2個羧基的二羧酸,更佳為具有醚鍵結且具有至少2個羧基的二羧酸。藉由選擇並添加此種構造之物質,即便是在氮氣中以較低溫進行的熱處理,亦可將經有機物被覆之銀奈米粒子變換成塊狀的銀。
上述助熔劑成分較佳亦可分解成盡可能單純的構造(具體而言,最終形態為二氧化碳及水等)。因此,較佳為僅由有機物中的碳、氫、氧之元素所構成者即可。又,其分解溫度較佳亦至少為熱處理之設定溫度以下。就分子量而言,藉由設成1000以下,較佳為500以下,更佳為300以下,則分解或揮發變得更容易發生,故而在操作上便利。
上述助熔劑成分可例示具有二羧酸構造之甘醇酸(glycolic acid)。另外,若分子變得過大,則在分解時需要較高的溫度,故而不佳。這是因為由提升黏合強度的觀點而言,助熔劑成分較宜在形成黏合部之後分解蒸散,而不殘留在黏合部分。分解溫度較宜至少低於主要煅燒中的設定溫度。具體而言,可選擇500℃以下,更佳為300℃以下。惟,在具有不分解而直接氣化的性質者之情況,上述「分解溫度」係替換成「蒸發(氣化)溫度」。
更具體而言,分子構造中的合計碳數可至多為15以下,較佳為10以下。若為具有此種程度碳數的構造,則即便在黏合溫度左右之較低溫,亦可使其分解或蒸散。
本發明之糊劑中,亦可添加使銀奈米粒子粉末適度分散之分散劑。藉由使用此種分散劑,係確保糊劑中粒子的獨立性,而可提供保存安定性優異的糊劑。惟,根據所添加的物質,會有分散性反而惡化之情形,故必須注意。作為其性質,只要是與銀奈米粒子表面具有親和性並且對於分散媒亦具有親和性者,則市售泛用者即足夠。又,不僅可使用單獨種類,併用使用亦無妨。其添加量係相對於糊劑整體為10質量%以下,較佳為5質量%以下,更佳為3質量%以下。
作為具有此種性質之分散劑,具代表性者為:脂肪酸鹽(肥皂)、α-磺酸脂肪酸酯鹽(MES)、烷基苯磺酸鹽(ABS)、直鏈烷基苯磺酸鹽(LAS)、烷基硫酸鹽(AS)、烷基醚硫酸酯鹽(AES)、烷基硫酸三乙醇等低分子陰離子性(anionic)化合物;脂肪酸乙醇醯胺、聚氧伸乙基烷基醚(AE)、聚氧伸乙基烷基苯基醚(APE)、山梨醇、山梨醇酐等低分子非離子系化合物;烷基三甲基銨鹽、氯化二烷基二甲基銨、氯化烷基吡啶鎓等低分子陽離子性(cationic)化合物;烷基羧基甜菜鹼、磺酸基甜菜鹼、卵磷脂等低分子兩性系化合物;以及萘磺酸鹽之甲醛縮合物、聚苯乙烯磺酸鹽、聚丙烯酸鹽、乙烯系化合物與羧酸系單體之共聚合體鹽、羧基甲基纖維素、聚乙烯醇等所代表之高分子水系分散劑;聚丙烯酸部分烷基酯、聚伸烷基多胺等高分子非水系分散劑;聚乙烯亞胺、甲基丙烯酸胺基烷基酯共聚合體等高分子陽離子系分散劑。然而,只要是可適當應用於本發明之銀奈米粒子者,亦不排除具有如此處所例示之形態者以外的構造者。
作為分散劑,已知有列舉具體名稱之如下所列者,但在具有上述性質的情況,不排除使用本段所記載者以外之物。舉例而言,可例示三洋化成股份有限公司製之Beaulight LCA-H、LCA-25NH等、共榮社化學股份有限公司製之Flowlen DOPA-15B等、日本Lubrizol股份有限公司製之Solplus AX5、Solsperse 9000、Solthix 250等、EFKA Additives B.V.公司製之EFKA4008等、味之素Fine-Techno股份有限公司製之Ajisper-PA111等、Cognis Japan股份有限公司製之TEXAPHOR-UV21等、BYK-Chemie Japan股份有限公司製之DisperBYK2020及BYK220S等、楠本化成股份有限公司製之DISPARLON 1751N、HIPLAAD ED-152等、Neos股份有限公司製之FTX-207S、Ftergent 212P等、東亞合成股份有限公司製之AS-1100等、花王股份有限公司製之Kaocera 2000、KDH-154、MX-2045L、Homogenol L-18、Rheodol SP-010V等、第一工業製藥股份有限公司製之Epan U103、Seanol DC902B、Noigen EA-167、Plysurf A219B等、DIC股份有限公司製之Megafac F-477等、日信化學工業股份有限公司製之Silface SAG503A、Dyno1604等、SAN NOPCO股份有限公司製之SN Sperse 2180、SN Leveller S-906等、AGC SEIMI CHEMICAL公司製之S-386等。
如此形成之黏合材料可藉由溶媒種類和金屬比例的調整,而適當變更其黏度。一般認為若可調整黏度,則適當選擇印刷方法,可有助於擴大可利用之用途。這是因為對黏合對象處之塗佈係變得容易。根據本發明者等人之檢討,在常溫為10~250Pa‧s,較佳為10~100Pa‧s,更佳為10~50Pa‧s左右。另外,此黏度值係在25℃條件下,於5rpm、C(錐體) 35/2時之值。
根據本發明之黏合材料,可大致經由如下述之製造方法而提供。例如,作為銀奈米粒子,可使用如日本專利第4344001號中所記載之銀奈米粒子。將如此所得之銀奈米粒子及具有上述性質之助熔劑成分、以及視情況之分散劑,添加至上述分散媒中。然後,導入至混練脫泡機而製作該成分之混練物。然後,視情況進行機械性分散處理而形成糊劑。
上述機械性分散處理中,在無伴隨銀奈米粒子的顯著改質之條件下,可採用公知的任一種方法。具體而言,可例示超音波分散、分散機、三輥磨機、球磨機、珠磨機、二輥捏合機、自公轉式攪拌機等,該等可單獨使用或併用複數個而使用。
黏合體之形成係藉由例如金屬遮罩、分配器或網版印刷法,在黏合物的黏合面塗佈黏合材料至厚度20~200μm左右。然後,貼附被黏合物,藉由加熱處理而使黏合材料金屬化。若為本黏合材料,則藉由在氮氣中的加熱處理亦可進行金屬化,藉由在大氣中的加熱處理亦可進行金屬化。
此時,若使用本發明之黏合材料,則可在未對黏合物及被黏合物進行加壓之情況下形成黏合體。然而,並非將加壓之步驟予以排除。若追加對黏合物及被黏合物進行加壓之步驟,則可使黏合更加堅固,故有時較佳。
基本加壓係藉由使黏合處成為高壓,而使氣泡從黏合處溢出,由減低變異及提升黏合強度之觀點而言,被認為較佳。然而,若使用本發明之糊劑,則並不一定需要加壓。即便是在視需要進行加壓之情況中,藉由5MPa左右的加壓,即可獲得足夠高的黏合強度。
在使用根據本發明之糊劑(黏合材料)並進行加壓而形成黏合體之情況,較佳係進行經由多段熱處理之金屬化。詳細而言,係經過如下所述之步驟。第一階段煅燒(預煅燒步驟)之目的為使黏合材料中所添加之溶媒蒸發除去。但是,若以過度高溫施行熱處理,則會有不僅是溶媒,甚至是構成銀奈米粒子表面的有機物亦會被除去之情形。此情況中,黏合強度係變低,或產生品質變異,故而不佳。具體而言,以未滿銀奈米粒子的分解溫度之溫度進行即可。
銀奈米粒子的分解溫度有時會根據被覆其表面之有機物及分散媒、或添加物而大幅度變化,故較佳係預先藉由TG測定等事先瞭解該黏合材料的熱性質。一般而言,作為預煅燒溫度,應設定溫度係較佳設定成較主要煅燒所設定的溫度低50~400℃左右之溫度。又,預煅燒所花費的時間係取決於該黏合對象面積,只要大約10分鐘左右即足夠充分,視情況進行30秒左右之加熱亦無妨。
藉由主要煅燒步驟(在進行預煅燒之情況中,係於經預煅燒後,而在未伴隨預煅燒之情況中,則於塗佈後即刻),而將糊劑完全金屬化。直至主要煅燒步驟為止,在此之間亦可具備升溫步驟。較佳係將此時的升溫速度設定成0.5~10℃/秒,較佳為0.5~5℃/秒之範圍。
主要煅燒係保持在150℃以上且500℃以下之溫度,且在60分鐘以內、或30分鐘以內的時間。在一面對黏合體從外部施加壓力,一面進行處理之情況中,進行加壓的壓力可為10MPa以下,視情況設成5MPa以下亦足夠。
此外,藉此獲得之黏合體,即便是在惰性氣體環境下,亦可獲得結晶的顯著成長。具體而言,若予以數值化,則即便是藉由250℃10分鐘之熱處理,根據X射線半價寬所算出之Ag(111)面中的結晶子徑亦顯示65nm以上。此值越大,表示粒子間越不會產生結晶粒界,故而較佳。更佳可具有成為67nm以上,再更佳70nm以上之性質。
於500mL燒杯,使硝酸銀(東洋化學股份有限公司製)13.4g溶解於純水72.1g,而製作銀溶液。
繼而,將1.34L純水裝入5L燒杯中,通入氮氣30分鐘,藉此除去溶存氧,並且升溫至60℃。接著,添加山梨酸(和光純藥工業股份有限公司製) 17.9g。其次,添加28%氨水(和光純藥工業股份有限公司製) 2.82g以進行pH調整。以下的實施例、比較例中,均藉由添加此氨水而開始反應。一面將其攪拌,一面在反應開始經過5分鐘後添加含水肼(純度80%/大塚化學股份有限公司製) 5.96g。
在反應開始經過9分鐘後,添加銀溶液並使其反應。然後,進行30分鐘熟成,使經山梨酸被覆之銀奈米粒子形成。然後,以No5C的濾紙過濾,並以純水洗淨,而獲得銀奈米粒子凝集體。在真空乾燥機中以80℃ 12小時的條件使該凝集體乾燥,獲得銀奈米粒子乾燥粉末凝集體。
將經由如上述之方法而獲得之經山梨酸被覆之銀奈米粒子凝集體乾燥粉末(平均粒徑:60nm) 45.0g、作為次微米銀粒子之球狀銀粒子粉末(同和電子科技股份有限公司製D2-1-C球狀銀粉末:平均粒徑(D50
) 600nm) 45.0g、辛二醇(協和發酵化學公司製:2-乙基-1,3-己二醇) 9.0g、作為濕潤分散劑之Beaulight LCA-25NH(三洋化成股份有限公司製)1.00g(相對於總糊劑重量為1.0%)混合,以混練脫泡機(EME公司製V-mini300型)混練30秒(混練條件/公轉(Revolution);1400rpm,自轉(Rotation);700rpm)後,在三輥機(EXAKT Apparatebaus公司製22851Norderstedt型)通過五次,藉此製作黏合材料糊劑。
將所獲得之黏合材料藉由印刷法塗佈於基板上。此時的條件,係設成金屬遮罩(遮罩厚50μmt),圖案係設成□2mm、50μm厚,在鍍銀之銅基板上以利用金屬刮板的徒手印刷進行塗佈。另外,辛二醇的沸點為244℃,燃點為135℃。又,確認即便將本實施例之糊劑在密閉條件下,於常溫放置90天,亦不會發生糊劑分離或黏度極端上升,在使用上沒有問題。
對上述塗佈面安裝晶片(□2mm,厚2mm的銅基板)。將如此所得之安裝品在氮氣環境(氧濃度:50ppm以下)中,以加熱爐(ULVAC理工公司製桌上型燈管加熱裝置MILA-5000型)於100℃加熱10分鐘,藉此除去糊劑中的溶媒(分散媒)成分(預煅燒)。另外,為了確認煅燒膜的比電阻(specific resistance)及燒結狀態,亦同時製作未在黏合材料上搭載晶片,僅在基板上印刷黏合材料並予以煅燒之試樣。
將經預煅燒之試樣以升溫速度1℃/秒之條件繼續升溫至350℃,到達350℃後,進行5分鐘加熱處理,藉此獲得黏合體(主要煅燒)。預煅燒、主要煅燒兩步驟在本實施例中均未進行加壓。
對所獲得之黏合體的黏合力進行確認。具體而言,係以JISZ-03918-5:2003之「無鉛焊接試驗方法第5部焊接接點拉伸及剪斷試驗方法」所記載之方法為基準而進行。亦即,將黏合於基板上之被黏合體(晶片)朝水平方向推壓,並測定黏合面無法承受所推壓的力而斷裂時的力之方法。本實施例中係使用DAGE公司製接合測試機(4000系列)而進行試驗。剪切高度為150μm,試驗速度為5mm/分鐘,測定係在室溫進行。又,煅燒膜的比電阻係以4探針法測定。
結果,實施例1之5個樣品間的平均剪切強度為34.7MPa,表示黏合變異的CV值(標準偏差/平均值×100)為14.1%。另外,剪斷試驗方法係直接測定黏合面斷裂時的力(N),其係取決於黏合面積之值。於是,為了作成標準值,將所測定之斷裂時的力除以黏合面積(此次的情況係2(mm)×2(mm)=4mm2
)而得的值(MPa)定為剪切強度。以下的樣品皆同。
除了將實施例1中之糊劑構成,作成混合經山梨酸被覆之銀奈米粒子凝集體乾燥粉末(平均粒徑:60nm) 45.0g、作為次微米銀粒子之球狀銀粒子粉末(同和電子科技股份有限公司製D2-1-C球狀銀粉末:平均粒徑(D50
) 600nm) 45.0g、辛二醇(協和發酵化學公司製) 8.9g、氧二乙酸0.10g(相對於總糊劑重量為0.1%)、作為濕潤分散劑之Beaulight LCA-25NH(三洋化成股份有限公司製) 1.00g(相對於總糊劑重量為1.0%)以外,其餘係重複實施例1之程序。5個樣品間的平均剪切強度為47.1MPa,表示黏合變異的CV值為7.8%,相較於實施例1,可獲得具有高黏合強度及低變異的黏合體。又,確認即便將本實施例之糊劑在密閉條件下,於常溫放置90天,亦不會發生糊劑分離或黏度極端上升,在使用上沒有問題。
除了將實施例2中之糊劑構成,設成經山梨酸被覆之銀奈米粒子凝集體乾燥粉末44.2g、作為次微米銀粒子之球狀銀粒子粉末44.2g、辛二醇(協和發酵化學公司製)10.5g以外,其餘係同樣地進行操作並重複實施例2之程序。將所獲得之黏合體的黏合強度及表示變異的CV值示於表1。另外,表1中,未選擇的材料係以空欄表示。又,確認即便將本實施例之糊劑在密閉條件下,於常溫放置90天,亦不會發生糊劑分離或黏度極端上升,在使用上沒有問題。
除了對實施例1中之糊劑構成,將經山梨酸被覆之銀奈米粒子凝集體乾燥粉末之平均粒徑設成100nm以外,其餘係設成相同構成比例並重複實施例1之程序。將所獲得之黏合體的黏合強度及表示變異的CV值示於表1。又,確認即便將本實施例之糊劑在密閉條件下,於常溫放置90天,亦不會發生糊劑分離或黏度極端上升,在使用上沒有問題。
除了對實施例4中之糊劑構成,將辛二醇9.0g變更成辛二醇8.95g及氧二乙酸0.05g(相對於總糊劑重量為0.05%)以外,其餘係重複實施例4之程序。將所獲得之黏合體的黏合強度及表示變異的CV值示於表1。又,確認即便將本實施例之糊劑在密閉條件下,於常溫放置90天,亦不會發生糊劑分離或黏度極端上升,在使用上沒有問題。
除了將實施例4中之糊劑構成,設成經山梨酸被覆之銀奈米粒子凝集體乾燥粉末46.0g、作為次微米銀粒子之球狀銀粒子粉末46.0g、辛二醇(協和發酵化學公司製) 7.0g以外,其餘係同樣地進行操作並重複實施例4之程序。將所獲得之黏合體的黏合強度及表示變異的CV值示於表1。又,確認即便將本實施例之糊劑在密閉條件下,於常溫放置90天,亦不會發生糊劑分離或黏度極端上升,在使用上沒有問題。
除了將實施例4中之糊劑構成,變更成經山梨酸被覆之銀奈米粒子凝集體乾燥粉末43.0g、作為金屬微米粉末之球狀銀粒子粉末43.0g、辛二醇(協和發酵化學公司製) 12.9g及氧二乙酸0.10g(相對於總糊劑重量為0.10%)以外,其餘係重複實施例4之程序。將所獲得之黏合體的黏合強度及表示變異的CV值示於表1。又,確認即便將本實施例之糊劑在密閉條件下,於常溫放置90天,亦不會發生糊劑分離或黏度極端上升,在使用上沒有問題。
除了將實施例4中之糊劑構成,變更成經山梨酸被覆之銀奈米粒子凝集體乾燥粉末44.2g、作為次微米銀粒子之球狀銀粒子粉末44.2g、辛二醇(協和發酵化學公司製) 10.5g及氧二乙酸0.10g(相對於總糊劑重量為0.10%)以外,其餘係重複實施例4之程序。將所獲得之黏合體的黏合強度及表示變異的CV值示於表1。又,在將主要煅燒溫度設成260℃且予以加熱10分鐘之情況,獲得黏合強度22.1MPa且CV值22.4%的結果。又,確認即便將本實施例之糊劑在密閉條件下,於常溫放置90天,亦不會發生糊劑分離或黏度極端上升,在使用上沒有問題。
除了將實施例1中之糊劑構成,設成經山梨酸被覆之銀奈米粒子凝集體乾燥粉末(平均粒徑:60nm) 45.0g、作為次微米銀粒子之球狀銀粒子粉末(同和電子科技股份有限公司製D2-1-C球狀銀粉末:平均粒徑(D50
) 600nm) 45.0g、萜品醇(terpineol)(結構異構體混合/和光純藥工業股份有限公司製)9.00g以外,其餘係重複實施例1之程序。5個樣品間的平均剪切強度為25.5MPa,表示黏合變異的CV值為30.6%,相較於實施例1,成為黏合強度低且變異大的黏合體。另外,萜品醇的沸點為219℃,燃點為91℃。
除了將比較例1之萜品醇(結構異構體混合/和光純藥工業股份有限公司製) 9.00g設成萜品醇(結構異構體混合/和光純藥工業股份有限公司製)8.80g及氧二乙酸0.20g(相對於總糊劑重量為0.2%)以外,其餘係重複比較例1之程序。將所獲得之黏合體的黏合強度及表示變異的CV值示於表1。
除了將比較例1之萜品醇(結構異構體混合/和光純藥工業股份有限公司製) 9.00g設成萜品醇(結構異構體混合/和光純藥工業股份有限公司製)8.90g及氧二乙酸0.10g(相對於總糊劑重量為0.1%)以外,其餘係重複比較例1之程序。將所獲得之黏合體的黏合強度及表示變異的CV值示於表1。
除了將實施例4之辛二醇變更成萜品醇(結構異構體混合/和光純藥工業股份有限公司製)以外,其餘係重複實施例4之程序。將所獲得之黏合體的黏合強度及表示變異的CV值示於表1。
若將比較例1與實施例1進行比較,可得知將溶媒從萜品醇(沸點219℃)變更成辛二醇(沸點244℃)的效果。由此可獲得黏合強度變高,且黏合樣品間的強度變異減低者。再者,藉由將實施例1與2進行比較,可知若將一部分辛二醇置換成氧二乙酸,則可獲得黏合強度高且變異減低的黏合體。
圖1中,係顯示黏合強度(MPa)與變異(CV值(%))之關係的圖表。縱軸為黏合強度(MPa),橫軸為CV值(%)。就整體傾向而言,可說若CV值變小,則黏合強度上升,且有朝左上升的傾向。此外,對於CV值設定12%前後為邊界,實施例的CV值小,比較例的CV值大。關於此時的黏合強度,實施例各樣品係顯示高黏合強度。
藉由將比較例1與比較例4進行比較,可得知銀奈米粒子的粒徑差異(從60nm變更成100nm)所造成的效果。由此可獲得黏合強度稍微改善,且黏合樣品間的強度變異減低者。又,藉由將比較例4與實施例4進行比較,可得知變更溶媒的效果。可獲得黏合樣品間的強度變異雖然相等,但黏合強度顯著改善者。再者,藉由將實施例4與5進行比較,可知若將一部分辛二醇置換成氧二乙酸,則可獲得黏合強度高且變異減低的黏合體。
由此可知,在使用實施例之糊劑的情況,儘管是在氮氣中煅燒,但仍可獲得顯現黏合強度高達30MPa以上,且黏合強度變異未滿20%者。此對於製品安定性的提升有顯著的貢獻。
再者,實施例5中,黏度經測定為71.5MPa,而實施例7中,黏度經測定為28.5MPa,得知可根據金屬構成而提供適度黏度的糊劑。此係顯示可提供具有因應各印刷方式及印刷條件的黏度之糊劑,而可期待能夠應用於所有用途的黏合。
又,圖2中,係顯示關於實施例與比較例之保存安定性。圖2(a)係實施例7之保存安定性,圖2(b)係比較例2之保存安定性。分別地,橫軸為經過天數,縱軸為黏度。每個樣品均為將100g個別黏合材料封入可加蓋的玻璃瓶中,予以加蓋,在常溫(25℃)及高溫(40℃)環境下進行保存時的結果。另外,蓋子係以與通常市售時之封裝狀態同等的程度進行密封。
又,黏度係使用流變計(HAAKE製之RheoStress 600)、及Φ
35mm、角度2°的錐體,在測定時的間隙為0.105mm、溫度為25℃的條件,剪斷速度3.13[1/s]時的值。
實施例7之情況(圖2(a)),即便經過90天,亦幾乎沒有黏度變化。然而,比較例2之情況(圖2(b)),在90天之間,黏度係大幅度變化。萜品醇的沸點為219℃,雖然若與辛二醇的沸點244℃比較係較低,但若與環境溫度比較則為十分地高的溫度。然而,在長期保存中,黏度呈現大幅度的變化。一般認為此不僅顯示由於萜品醇從保存容器逸出而使黏度增加,亦顯示辛二醇係為對本發明之黏合材料的組成系統賦予安定性的材料。
由以上說明可知,根據本案發明之黏合係應用於非絕緣型半導體裝置、裸晶片安裝組裝技術,亦可應用於功率裝置(IGBT、整流二極體、功率電晶體、功率MOSFET、絕緣閘極雙極電晶體、閘流體、閘極截止閘流體、雙向三極體(triac))之製造時的黏合步驟。又,亦可作為對於表面經鉻處理之玻璃上的黏合材料,亦可利用作為使用LED之照明裝置之電極及框架的黏合材料。
圖1係顯示實施例及比較例的黏合強度(MPa)及樣品間變異CV值(%)之圖。
圖2係顯示實施例及比較例的保存安定性之圖。
Claims (11)
- 一種黏合材料,其係含有:平均初級粒徑為1~200nm,且經碳數8以下之脂肪酸所被覆之銀奈米粒子;沸點為230℃以上的分散媒;以及平均粒徑為0.5~3.0μm之次微米銀粒子。
- 一種黏合材料,其係含有:平均初級粒徑為1~200nm,且經碳數8以下之脂肪酸所被覆之銀奈米粒子;沸點為230℃以上的分散媒;其中,上述沸點為230℃以上的分散媒係辛二醇。
- 一種黏合材料,其係含有:平均初級粒徑為1~200nm,且經碳數8以下之脂肪酸所被覆之銀奈米粒子;沸點為230℃以上的分散媒;以及具有至少2個羧基的有機物,作為助熔劑成分。
- 如申請專利範圍第3項之黏合材料,其中,上述具有至少2個羧基的有機物係進一步具有醚鍵結。
- 如申請專利範圍第3或4項之黏合材料,其中,上述具有至少2個羧基的有機物係氧二乙酸。
- 如申請專利範圍第1至3項中任一項之黏合材料,其中,上述被覆銀奈米粒子表面的脂肪酸中,至少一者係碳數為6。
- 一種相異的二物質之黏合方法,其具備下述步驟:至少在黏合面塗佈黏合材料的步驟(塗佈步驟),該黏合材 料係由平均初級粒徑為1~200nm且經碳數8以下之脂肪酸所被覆之銀奈米粒子、含有具有至少2個羧基及至少一個醚鍵結的有機物作為助熔劑成分、及沸點為230℃以上的分散媒所構成;在上述黏合材料上配置被黏合物的步驟;以配置有上述被黏合物之狀態加熱至指定溫度的預煅燒步驟;以及加熱至高於上述預煅燒溫度之溫度的主要煅燒步驟。
- 如申請專利範圍第7項之黏合方法,其中,係在惰性氣體環境下進行上述預煅燒及上述主要煅燒步驟。
- 如申請專利範圍第7或8項之黏合方法,其中,上述主要煅燒步驟係在200℃以上且500℃以下之溫度進行。
- 如申請專利範圍第1項之黏合材料,其中,上述沸點為230℃以上的分散媒係辛二醇。
- 如申請專利範圍第1、2或10項之黏合材料,其中,上述黏合材料中係進一步含有具有至少2個羧基的有機物,作為助熔劑成份。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2010/059921 WO2011155055A1 (ja) | 2010-06-11 | 2010-06-11 | 低温焼結性接合材および該接合材を用いた接合方法 |
PCT/JP2011/063418 WO2011155615A1 (ja) | 2010-06-11 | 2011-06-10 | 低温焼結性接合材および該接合材を用いた接合方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201213473A TW201213473A (en) | 2012-04-01 |
TWI504704B true TWI504704B (zh) | 2015-10-21 |
Family
ID=45097684
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099139896A TW201143960A (en) | 2010-06-11 | 2010-11-19 | Low-temperature-sinterable bonding material, and bonding method using the bonding material |
TW100120513A TWI504704B (zh) | 2010-06-11 | 2011-06-13 | Low temperature sintered bonding material and bonding method using the same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099139896A TW201143960A (en) | 2010-06-11 | 2010-11-19 | Low-temperature-sinterable bonding material, and bonding method using the bonding material |
Country Status (6)
Country | Link |
---|---|
US (1) | US8641929B2 (zh) |
EP (1) | EP2581156B1 (zh) |
KR (1) | KR101709302B1 (zh) |
CN (1) | CN102958631B (zh) |
TW (2) | TW201143960A (zh) |
WO (2) | WO2011155055A1 (zh) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2455179B1 (en) * | 2009-07-14 | 2021-04-14 | DOWA Electronics Materials Co., Ltd. | Bonding material and bonding method each using metal nanoparticles |
HUE039370T2 (hu) * | 2010-03-15 | 2018-12-28 | Dowa Electronics Materials Co | Kötõanyag és rögzítési eljárás annak használatával |
JP4832615B1 (ja) * | 2010-11-01 | 2011-12-07 | Dowaエレクトロニクス株式会社 | 低温焼結性導電性ペーストおよびそれを用いた導電膜と導電膜の形成方法 |
KR102158290B1 (ko) * | 2010-11-22 | 2020-09-21 | 도와 일렉트로닉스 가부시키가이샤 | 접합재료, 접합체, 및 접합방법 |
JP5750259B2 (ja) * | 2010-11-30 | 2015-07-15 | ハリマ化成株式会社 | 導電性金属ペースト |
US20120291454A1 (en) * | 2011-05-20 | 2012-11-22 | Baker Hughes Incorporated | Thermoelectric Devices Using Sintered Bonding |
WO2012169076A1 (ja) * | 2011-06-10 | 2012-12-13 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いて作成された接合体 |
CN104066534B (zh) * | 2012-01-20 | 2016-05-11 | 同和电子科技有限公司 | 接合材料及使用其的接合方法 |
JP2014047415A (ja) * | 2012-09-03 | 2014-03-17 | Dowa Electronics Materials Co Ltd | 導電膜形成用銀粉、導電性ペーストおよび導電膜の形成方法 |
JP6179520B2 (ja) | 2012-09-05 | 2017-08-16 | 日立化成株式会社 | 銀ペースト組成物及びそれを用いた半導体装置 |
JP6118192B2 (ja) * | 2013-06-21 | 2017-04-19 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
TWI487446B (zh) * | 2013-06-21 | 2015-06-01 | Nat Univ Chung Hsing | A composite material having a composite structure |
JP6095002B2 (ja) * | 2013-06-26 | 2017-03-15 | 三菱電機株式会社 | 高周波装置の製造方法 |
JP5664739B2 (ja) * | 2013-10-21 | 2015-02-04 | トヨタ自動車株式会社 | 金属ナノ粒子ペースト |
JP5738464B1 (ja) * | 2013-12-10 | 2015-06-24 | Dowaエレクトロニクス株式会社 | 銀微粒子分散液 |
WO2015098658A1 (ja) * | 2013-12-24 | 2015-07-02 | Dic株式会社 | 金属ナノ粒子を含有する接合用材料 |
JP5795096B2 (ja) | 2014-02-25 | 2015-10-14 | 田中貴金属工業株式会社 | 低温焼結性に優れる銀ペースト及び該銀ペーストの製造方法 |
KR101860378B1 (ko) | 2014-04-04 | 2018-05-23 | 쿄세라 코포레이션 | 열경화성 수지 조성물, 반도체 장치 및 전기·전자 부품 |
JP6373066B2 (ja) | 2014-05-30 | 2018-08-15 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
JP5992961B2 (ja) * | 2014-06-25 | 2016-09-14 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
US20170213615A1 (en) * | 2014-07-22 | 2017-07-27 | Sumitomo Electric Industries, Ltd. | Metal nanoparticle dispersion and metal coating film |
DE112016000524B4 (de) * | 2015-01-29 | 2021-12-23 | Bando Chemical Industries, Ltd. | Bindemittelzusammensetzung und damit hergestelltes Verbindungselement |
CN107921533B (zh) | 2015-08-25 | 2020-05-08 | 田中贵金属工业株式会社 | 低温烧结性优异的金属浆料及该金属浆料的制造方法 |
US20180297112A1 (en) * | 2015-11-16 | 2018-10-18 | Bando Chemical Industries, Ltd. | Bonding composition |
KR20180127313A (ko) * | 2016-03-30 | 2018-11-28 | 가부시키가이샤 오사카소다 | 도전성 접착제 |
JP7007140B2 (ja) * | 2016-09-30 | 2022-01-24 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
JP6631502B2 (ja) * | 2016-12-27 | 2020-01-15 | 日亜化学工業株式会社 | レーザパッケージの製造方法 |
US10930612B2 (en) * | 2017-01-11 | 2021-02-23 | Showa Denko Materials Co., Ltd. | Copper paste for pressureless bonding, bonded body and semiconductor device |
KR102499022B1 (ko) * | 2017-03-15 | 2023-02-13 | 쇼와덴코머티리얼즈가부시끼가이샤 | 접합용 금속 페이스트, 접합체 및 그 제조 방법, 그리고 반도체 장치 및 그 제조 방법 |
CN110430951B (zh) * | 2017-03-15 | 2021-11-16 | 昭和电工材料株式会社 | 接合用金属糊料、接合体及其制造方法以及半导体装置及其制造方法 |
JP2018165387A (ja) * | 2017-03-28 | 2018-10-25 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合体 |
JP6561100B2 (ja) | 2017-10-04 | 2019-08-14 | Jx金属株式会社 | 表面処理銅微粒子の製造方法 |
KR102643575B1 (ko) * | 2017-11-08 | 2024-03-04 | 가부시끼가이샤 레조낙 | 접합체의 제조 방법 및 접합재 |
JP7093945B2 (ja) * | 2018-02-28 | 2022-07-01 | 公立大学法人大阪 | ナノ銀ペーストを用いた半導体チップ接合方法 |
JP6879512B2 (ja) * | 2018-09-20 | 2021-06-02 | 協立化学産業株式会社 | 封止用組成物 |
JP7170968B2 (ja) * | 2019-02-22 | 2022-11-15 | 株式会社大阪ソーダ | 導電性接着剤を用いる接合方法 |
CN111843287A (zh) * | 2020-07-27 | 2020-10-30 | 中国科学院深圳先进技术研究院 | 纳米银焊膏及其制备方法和应用 |
CN112321306B (zh) * | 2020-11-08 | 2022-06-03 | 中民驰远实业有限公司 | 一种镁质结合剂及使用镁质结合剂制备耐火材料的方法 |
CN112475662A (zh) * | 2020-11-18 | 2021-03-12 | 中国科学院深圳先进技术研究院 | 纳米银焊膏及其制备方法和在芯片封装互连结构中的应用 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200519968A (en) * | 2003-09-12 | 2005-06-16 | Nat Inst Of Advanced Ind Scien | A dispersion of nano-size metal particles and a process for forming a layer of an electric conductor with use thereof |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10297544B4 (de) * | 2001-12-18 | 2015-10-29 | Asahi Kasei Kabushiki Kaisha | Verfahren zur Herstellung eines Metall-Dünnfilms |
US20040245648A1 (en) * | 2002-09-18 | 2004-12-09 | Hiroshi Nagasawa | Bonding material and bonding method |
US20050136638A1 (en) * | 2003-12-18 | 2005-06-23 | 3M Innovative Properties Company | Low temperature sintering nanoparticle compositions |
CN100586613C (zh) * | 2004-06-25 | 2010-02-03 | 三菱麻铁里亚尔株式会社 | 金属胶体粒子、金属胶体和金属胶体的用途 |
JP5007020B2 (ja) * | 2004-12-20 | 2012-08-22 | 株式会社アルバック | 金属薄膜の形成方法及び金属薄膜 |
JP4660780B2 (ja) | 2005-03-01 | 2011-03-30 | Dowaエレクトロニクス株式会社 | 銀粒子粉末の製造方法 |
JP4973830B2 (ja) * | 2005-07-29 | 2012-07-11 | 戸田工業株式会社 | 導電性組成物、導電性ペースト及び導電性皮膜 |
JP2007095525A (ja) * | 2005-09-29 | 2007-04-12 | Tokai Rubber Ind Ltd | 導電性ペースト |
JP4279329B2 (ja) * | 2007-06-26 | 2009-06-17 | 古河電気工業株式会社 | 微粒子分散液、及び微粒子分散液の製造方法 |
WO2008013198A1 (en) | 2006-07-28 | 2008-01-31 | The Furukawa Electric Co., Ltd. | Method for producing fine particle dispersion and fine particle dispersion |
WO2008013199A1 (en) | 2006-07-28 | 2008-01-31 | The Furukawa Electric Co., Ltd. | Fine particle dispersion and method for producing fine particle dispersion |
JP4963393B2 (ja) * | 2006-10-03 | 2012-06-27 | 三ツ星ベルト株式会社 | 低温焼成型銀ペースト |
KR101334052B1 (ko) * | 2007-01-09 | 2013-11-29 | 도와 일렉트로닉스 가부시키가이샤 | 은 입자 분산액 및 그 제조법 |
US7422707B2 (en) * | 2007-01-10 | 2008-09-09 | National Starch And Chemical Investment Holding Corporation | Highly conductive composition for wafer coating |
US20080272344A1 (en) * | 2007-03-23 | 2008-11-06 | Georgia Tech Research Corporation | Conductive polymer composites |
US7576434B2 (en) * | 2007-06-26 | 2009-08-18 | Intel Corporation | Wafer-level solder bumps |
JP4986745B2 (ja) * | 2007-07-05 | 2012-07-25 | Dowaエレクトロニクス株式会社 | 銀ペースト |
EP3042727B1 (en) | 2007-10-24 | 2017-08-30 | DOWA Electronics Materials Co., Ltd. | Composition containing fine silver particles, production method thereof, method for producing fine silver particles, and paste having fine silver particles |
WO2009090748A1 (ja) | 2008-01-17 | 2009-07-23 | Applied Nanoparticle Laboratory Corporation | 複合銀ナノ粒子、その製法及び製造装置 |
JP5256281B2 (ja) * | 2008-03-18 | 2013-08-07 | 株式会社応用ナノ粒子研究所 | 複合銀ナノペースト、その製法及びナノペースト接合方法 |
US8513534B2 (en) | 2008-03-31 | 2013-08-20 | Hitachi, Ltd. | Semiconductor device and bonding material |
JP5399110B2 (ja) | 2008-04-23 | 2014-01-29 | トヨタ自動車株式会社 | 接合材料及び接合材料の成分算出方法 |
WO2010018782A1 (ja) * | 2008-08-11 | 2010-02-18 | 地方独立行政法人大阪市立工業研究所 | 銅系ナノ粒子及びその製造方法 |
JP5431071B2 (ja) * | 2008-08-28 | 2014-03-05 | 三ツ星ベルト株式会社 | 導電性基材およびその前駆体並びにその製造方法 |
US7935278B2 (en) * | 2009-03-05 | 2011-05-03 | Xerox Corporation | Feature forming process using acid-containing composition |
EP2455179B1 (en) | 2009-07-14 | 2021-04-14 | DOWA Electronics Materials Co., Ltd. | Bonding material and bonding method each using metal nanoparticles |
HUE039370T2 (hu) * | 2010-03-15 | 2018-12-28 | Dowa Electronics Materials Co | Kötõanyag és rögzítési eljárás annak használatával |
JP4928639B2 (ja) | 2010-03-15 | 2012-05-09 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
-
2010
- 2010-06-11 WO PCT/JP2010/059921 patent/WO2011155055A1/ja active Application Filing
- 2010-11-19 TW TW099139896A patent/TW201143960A/zh unknown
-
2011
- 2011-06-10 CN CN201180028565.5A patent/CN102958631B/zh active Active
- 2011-06-10 US US13/702,718 patent/US8641929B2/en active Active
- 2011-06-10 KR KR1020127033853A patent/KR101709302B1/ko active IP Right Grant
- 2011-06-10 EP EP11792572.7A patent/EP2581156B1/en active Active
- 2011-06-10 WO PCT/JP2011/063418 patent/WO2011155615A1/ja active Application Filing
- 2011-06-13 TW TW100120513A patent/TWI504704B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200519968A (en) * | 2003-09-12 | 2005-06-16 | Nat Inst Of Advanced Ind Scien | A dispersion of nano-size metal particles and a process for forming a layer of an electric conductor with use thereof |
Also Published As
Publication number | Publication date |
---|---|
TW201143960A (en) | 2011-12-16 |
WO2011155615A1 (ja) | 2011-12-15 |
EP2581156A4 (en) | 2015-02-25 |
KR20130101986A (ko) | 2013-09-16 |
KR101709302B1 (ko) | 2017-02-22 |
CN102958631B (zh) | 2015-08-05 |
US20130081759A1 (en) | 2013-04-04 |
CN102958631A (zh) | 2013-03-06 |
WO2011155055A1 (ja) | 2011-12-15 |
US8641929B2 (en) | 2014-02-04 |
EP2581156A1 (en) | 2013-04-17 |
EP2581156B1 (en) | 2016-06-01 |
TW201213473A (en) | 2012-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI504704B (zh) | Low temperature sintered bonding material and bonding method using the same | |
TWI490170B (zh) | 黏合材料及使用其之黏合方法與黏合體 | |
JP5651113B2 (ja) | 金属ナノ粒子を用いた接合材および接合方法 | |
JP4928639B2 (ja) | 接合材およびそれを用いた接合方法 | |
JP5824201B2 (ja) | 接合材およびそれを用いた接合方法 | |
JP6214600B2 (ja) | 接合材料および接合体 | |
TW201249943A (en) | Bonding material and bonded object produced using same | |
JP2017111975A (ja) | 接合材及び接合体の製造方法 | |
JP5487301B2 (ja) | 低温焼結性接合材および該接合材を用いた接合方法 | |
JP2017106086A (ja) | 接合材及び接合体の製造方法 |