WO2011114618A1 - テープ貼付装置及びテープ貼付方法 - Google Patents
テープ貼付装置及びテープ貼付方法 Download PDFInfo
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- WO2011114618A1 WO2011114618A1 PCT/JP2011/000713 JP2011000713W WO2011114618A1 WO 2011114618 A1 WO2011114618 A1 WO 2011114618A1 JP 2011000713 W JP2011000713 W JP 2011000713W WO 2011114618 A1 WO2011114618 A1 WO 2011114618A1
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- tape
- airtight space
- speed
- elastic sheet
- hermetic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
Definitions
- the present invention relates to a tape sticking apparatus and a tape sticking method used for sticking a dicing tape to a semiconductor wafer, and more particularly to an apparatus suitable for sticking a tape to a low-rigidity sticking object.
- a wafer 42 When sticking a dicing tape to a semiconductor wafer in a semiconductor manufacturing process, for example, as shown in FIG. 17, a wafer 42 is placed on a base 41 and a roller 44 with rubber attached to the surface, The tape 43 was pressed and pasted from above with a cylindrical block or the like. However, since this method is performed in the atmosphere, air is easily mixed between the wafer 42 and the tape 43. When dicing (chip division) is performed in this state, the chip is cracked or chipped.
- Patent Document 1 a pasting device for pasting tape in a vacuum environment has been proposed.
- a chamber 52 having an airtight space 51 inside, and the airtight space 51 are partitioned into first and second airtight spaces 53 and 54, and a wafer 55 is mounted on the upper surface.
- the first and second air flows for switching the rubber sheet 56 to be placed, the frame base 58 for holding the tape 57 above the rubber sheet 56, and the first and second airtight spaces 53 and 54 to the vacuum / atmosphere state.
- a tape applicator 50 having paths 59, 60 is described.
- the tape applicator 50 After the first and second hermetic spaces 53 and 54 are in a vacuum state, only the second hermetic space 54 is switched to atmospheric pressure, and the first and second hermetic spaces 53 and 54 are separated. To create a differential pressure. Thereby, the rubber sheet 56 is expanded to push up the wafer 55, and the wafer 55 is brought into contact with the adhesive surface (back surface) of the tape 57. According to this tape sticking device 50, the tape 57 and the wafer 55 can be stuck together in a vacuum environment, and it is possible to prevent air from being mixed between the two.
- Such a problem is not limited to the case where a tape is applied to a wafer.
- a tape is applied to a low-rigidity object such as a tape applied to an ultra-thin glass plate, the same applies. Can occur.
- the present invention has been made in view of the problems in the conventional technology described above, and in applying a tape to a low-rigidity sticking object, the load on the sticking object is reduced, and It aims at providing the tape sticking apparatus etc. which can prevent a failure
- a tape applicator includes a container having an airtight space therein, a first airtight space positioned above, and a second airtight position positioned below.
- An elastic sheet that is partitioned into a space, the tape application object is placed on the first airtight space side, the tape is held in the first airtight space, and the tape is placed on the elastic sheet.
- a tape holding member positioned at a predetermined distance from a tape application target; and an atmospheric pressure switching means for switching between pressurization and depressurization of the first and second hermetic spaces, the first and second hermetic seals After the space is evacuated, the second airtight space is pressurized to expand the elastic sheet, and when the tape application object is pushed up and attached to the tape, the amount of pressure applied to the second airtight space Control the elastic sheet While gradually changed toward the fast rate of expansion from a low speed, the tape application object and wherein the paste on the tape.
- the tape application method partitions a container having an airtight space inside, and the airtight space into a first airtight space located above and a second airtight space located below.
- the tape applicator comprising a tape holding member positioned at a predetermined distance and an air pressure switching means for switching between pressurization and decompression of the first and second airtight spaces.
- the second airtight space is pressurized to expand the elastic sheet, and when the tape application object is pushed up and applied to the tape, the second airtight space is added. Controlling the amount of pressure, the elasticity While gradually changing toward the expansion rate of over bets from a low speed to a high speed, the tape application object and wherein the paste on the tape.
- the present invention when applying a tape to a low-rigidity target object, it is possible to reduce the load on the target object and prevent the target object from being damaged or damaged.
- FIG. 2B is a sectional view taken along the line IIB-IIB in FIG. 2A. It is a top view which expands and shows the spacer of FIG.
- FIG. 3B is a cross-sectional view taken along the line IIIB-IIIB of FIG. 3A. It is a top view which expands and shows the rubber sheet and pressing ring of FIG. It is IVB-IVB sectional drawing of FIG. 4A. It is a main flowchart which shows the procedure of the tape sticking method using the tape sticking apparatus of FIG.
- FIG. 1 shows an embodiment of a tape applicator according to the present invention.
- the tape applicator 1 is roughly divided into an apparatus main body 2, an air supply / exhaust mechanism 3 for supplying air (clean air) and nitrogen to the apparatus main body 2 and sucking air from the apparatus main body 2, and an air supply and the like.
- a control unit 4 for controlling the discharge timing.
- the device body 2 is a device for performing a pasting operation.
- the apparatus main body 2 is formed in a cylindrical shape.
- the apparatus main body 2 divides the airtight space 5 into a first airtight space 7 and a second airtight space 8 and has a disk-shaped wafer 9 on the upper surface.
- the vacuum degree sensor 15 etc. which detect a degree are provided.
- the chamber 6 includes an upper chamber (upper lid) 6a and a lower chamber (base) 6b formed in two. A concave portion that is recessed upward is formed inside the upper chamber 6a. Between the upper and lower chambers 6a and 6b, a seal ring 16 for ensuring the airtightness of the airtight space 5 is disposed.
- first and second air supply / exhaust pipes 13 and 14 are laid in the lower chamber 6b.
- a mesh lid 14a having a large number of small holes is attached to the opening of the second air supply / exhaust pipe 14, as shown in FIGS. 2A and 2B.
- a plurality of spacers 17 having a predetermined height are formed on the upper surface of the lower chamber 6b. As shown in FIGS. 3A and 3B, these spacers 17 are arranged in a cross shape with the opening of the second air supply / exhaust pipe 14 as the center.
- a stretchable rubber sheet 10 is installed on the upper surface of the lower chamber 6b as shown in FIG.
- the rubber sheet 10 is preferably formed of an elastic body having excellent gas barrier properties such as chloroprene rubber and ethylene propylene rubber.
- the spacer 17 is also preferably formed of the same material as that of the rubber sheet 10.
- the rubber sheet 10 is fixed by screwing the pressing ring 18 to the lower chamber 6b.
- a plurality of grooves 19 are formed in the pressing ring 18. By these grooves 19, the inner space 7 a and the outer space 7 b of the pressing ring 18 are communicated.
- the groove 19 may be formed in the tape frame 12 described later, or may be formed in both the holding ring 18 and the tape frame 12.
- a tape frame 12 having an annular shape when viewed from above is placed on the upper surface of the pressing ring 18.
- a tape 11 having an adhesive such as a UV curable resin or a thermosetting resin applied on the back surface is attached on the upper surface of the tape frame 12.
- the tape 11 is stuck in a state where a certain tension is applied, and thereby distortion and wrinkles of the tape 11 are prevented.
- the attachment of the tape 11 is not limited to the attachment to the upper surface of the tape frame 12, and the tape 11 may be sandwiched from the front and back by two frames, so long as the tape 11 is not distorted or wrinkled. Any mode may be used.
- the air supply / exhaust mechanism 3 includes a nitrogen supply source 21 that supplies nitrogen, an air supply source 22 that supplies air, a vacuum pump 23 that sucks air and nitrogen, a nitrogen supply source 21, a vacuum pump 23, and a first supply
- a first electromagnetic valve 24 installed between the exhaust pipe 13, a second electromagnetic valve 26 installed between the air supply source 22, the vacuum pump 23 and the second air supply / exhaust pipe 14;
- a third solenoid valve 27 installed between the second solenoid valve 26 and the air supply source 22; and a flow control valve 28 installed between the second solenoid valve 26 and the third solenoid valve 27; Is composed of.
- the first electromagnetic valve 24 is provided for selectively connecting the first air supply / exhaust pipe 13 to the nitrogen supply source 21 or the vacuum pump 23.
- the second electromagnetic valve 26 is provided for selectively connecting the second air supply / exhaust pipe 14 to the third electromagnetic valve 27 or the vacuum pump 23.
- the third electromagnetic valve 27 is provided to selectively connect the second air supply / exhaust pipe 14 to the flow control valve 28 or the air supply source 22.
- the flow control valve 28 is provided for limiting the flow rate of air.
- the control unit 4 controls the operation of the first to third electromagnetic valves 24, 26, 27 according to the output of the vacuum degree sensor 15 and the output of the built-in timer 4a, and the first and second of the apparatus body 2 are controlled.
- the pressurization / decompression of the airtight spaces 7 and 8 is controlled.
- the second electromagnetic valve 26 is opened to the vacuum pump 23 side, and the second airtight space (airtight space located below the rubber sheet 10) 8 is made into a reduced pressure atmosphere.
- the upper chamber 6a is opened, and the wafer 9 is placed at the center of the upper surface of the rubber sheet 10.
- the back surface (adhesive surface) of the tape 11 is attached to the upper surface of the tape frame 12, and the tape frame 12 to which the tape 11 is attached is placed on the pressing ring 18.
- the first electromagnetic valve 24 is opened to the vacuum pump 23 side, and the first supply / exhaust pipe 13 is connected to the vacuum pump 23.
- air is sucked from the first airtight space (airtight space located above the rubber sheet 10) to form a reduced pressure atmosphere (step S1 in FIG. 5).
- the first electromagnetic valve 24 is intermittently opened to the nitrogen supply source 21 side, and nitrogen is injected into the first hermetic space 7. This is to reduce the oxygen concentration in the first hermetic space 7 and to proceed with the pasting operation in an environment where the oxygen concentration is low.
- the UV curable resin has strong anaerobic properties, and when bonded in an environment having a high oxygen concentration, the curing action is reduced. Therefore, an uncured UV curable resin remains when the ultraviolet ray is irradiated in a later step. In that case, when the wafer 9 (chip) after dicing is peeled off from the tape 11, the chip is hardly peeled off. Therefore, as described above, nitrogen is injected into the first hermetic space 7 to reduce the oxygen concentration and prevent the curing action of the UV curable resin from being lowered.
- the operation of nitrogen injection can be performed as shown in FIG. Specifically, when the vacuum degree of the first hermetic space 7 reaches the first set vacuum degree in a state where air is sucked from the first hermetic space 7, the first supply / exhaust pipe 13 is connected to the nitrogen supply source 21. And nitrogen is injected into the first hermetic space 7 (steps S11 to S13). Then, nitrogen is continuously injected until the vacuum degree of the first hermetic space 7 reaches the second set vacuum degree. When the second set vacuum degree is reached, the number of times of nitrogen injection reaches the set number of times. Is determined (steps S14 to S15).
- step S16 evacuation is again performed to suck nitrogen (step S16), and the space 7 is decompressed in a state where the residual oxygen concentration in the first hermetic space 7 is 1% or less. Make the atmosphere.
- the first set vacuum degree, the second set vacuum degree, and the set number of times can be arbitrarily set.
- the step of injecting nitrogen can be omitted when an adhesive other than the UV curable resin is used because it considers the characteristics of the UV curable resin.
- the second electromagnetic valve 26 is closed to close the second air supply / exhaust pipe 14, and the second airtight space 8 is closed. To seal. At this time, in the second hermetic space 8, a natural leak occurs and some air flows, so that a slight differential pressure is generated between the first and second hermetic spaces 7 and 8.
- the rubber sheet 10 swells gently, and the wafer 9 on the rubber sheet 10 is slowly pushed up.
- the wafer 9 is brought into contact with the adhesive surface of the tape 11 (step S2 in FIG. 5), and the center of the wafer 9 is brought into contact with the tape 11 first.
- the wafer 9 when the wafer 9 is placed on an unstable base such as the rubber sheet 10, if the wafer 9 is pushed up at a high speed, the posture of the wafer 9 is disturbed or tilted, or the wafer 9 slides on the rubber sheet 10. Becomes easy to displace. On the other hand, by slowly pushing up the wafer 9, the wafer 9 can be brought into contact with the tape 11 while maintaining the posture and position of the wafer 9, and the wafer 9 can be securely attached from the center. Is possible.
- the second electromagnetic valve 26 is opened to the air supply source 22 side, the third electromagnetic valve 27 is opened to the flow control valve 28 side, and the air is supplied in a state where the flow rate is limited. 2 is supplied to the second air supply / exhaust pipe 14.
- the second airtight space 8 is set as a pressurized atmosphere, the differential pressure between the first and second airtight spaces 7 and 8 is increased, and the expansion speed of the rubber sheet 10 is changed from the low speed to the medium speed.
- This medium-speed application has a lower expansion speed of the rubber sheet 10 and a lower pushing-up pressure of the wafer 9 than the high-speed application described later.
- this step by pressing the wafer 9 against the tape 11 at a low pressure, the bonding area between the tape 11 and the wafer 9 is expanded without imposing an excessive load on the wafer 9.
- the tape 11 sticks to the wafer 9 and reinforces the wafer 9, so that cracking or chipping of the wafer 9 is suppressed.
- This step is for expanding the region to be reinforced as described above while minimizing the load on the wafer 9.
- the tape 11 and the tape frame 12 are pushed up together with the wafer 9. About 50% to 70% of the tape is brought into contact with the tape 11.
- the expansion speed (expansion pressure) of the rubber sheet 10 when the medium speed is applied is set to a speed (expansion pressure) that can be pressed against the tape 11 with a pressing pressure that does not damage the wafer 9.
- the pressing pressure that is not damaged varies depending on the thickness and shape (warping) of the wafer 9
- the speed during actual operation is appropriately determined according to the state of the wafer 9 to be used.
- the third electromagnetic valve 27 is supplied with air as shown in FIG. Opening to the source 22 side, the differential pressure between the first and second hermetic spaces 7, 8 is further increased.
- the expansion speed of the rubber sheet 10 is changed from a medium speed to a high speed (step S4 in FIG. 5), and the pressing pressure of the wafer 9 against the tape 11 is increased.
- the entire upper surface of the wafer 9 is attached to the tape 11 by this high-speed application.
- the tape 11 and the wafer 9 are pressed against the ceiling surface of the upper chamber 6 a to correct the warpage of the wafer 9 and improve the adhesion between the wafer 9 and the tape 11.
- the tape 11 functions as a protective member for protecting the upper surface of the wafer 9, the surface of the wafer 9 is not damaged.
- Switching between the low-speed sticking, the medium-speed sticking, and the high-speed sticking can be performed by automatic control.
- the timer 4a built in the control unit 4 can be used to switch according to the passage of time. .
- the first and second electromagnetic valves 24, 26 are closed to close the first and second air supply / exhaust pipes 13, 14, and the first and second airtight spaces 7, 8 is sealed. In this way, the state where the wafer 9 is pressed against the tape 11 is maintained for a predetermined time, and the adhesion between the tape 11 and the wafer 9 is stabilized (step S5 in FIG. 5).
- the first electromagnetic valve 24 is opened to the nitrogen supply source 21 side, and nitrogen is supplied to the first hermetic space 7.
- the rubber sheet 10 is contracted at a low speed, and the tape 11, the wafer 9, and the tape frame 12 are gently lowered (step S6 in FIG. 5).
- the rubber sheet 10 continues to contract at a low speed, and the rubber sheet 10 is gently peeled from the lower surface of the wafer 9. This prevents a large tensile load from being applied to the wafer 9 when the rubber sheet 10 is peeled off.
- the second electromagnetic valve 26 is opened to the vacuum pump 23 side, and air is sucked from the second airtight space 8. Thereby, the rubber sheet 10 is contracted and flattened at a high speed (step S7 in FIG. 5). Finally, the upper chamber 6a is opened, the tape 11 with the wafer 9 attached thereto is taken out together with the tape frame 12, and the operation is completed.
- the rubber sheet 10 when attaching the wafer 9 to the tape 11, as shown in FIG. 6, the rubber sheet 10 is attached while gradually changing the expansion speed from low speed to high speed ( Steps S2 to S4) in FIG. 5 can be applied in a state where the load on the wafer 9 is minimized. For this reason, even if it is the low-rigidity wafer 9, it becomes possible to affix the tape 11 while preventing the wafer 9 from being broken or damaged.
- low-speed application is performed, and the center of the wafer 9 is first brought into contact with the tape 11, so that in the subsequent medium-speed application and high-speed application, the wafer 9 is sequentially directed from the center toward the outer periphery. Can stick. For this reason, even when air exists between the wafer 9 and the tape 11, the wafer 9 can be adhered to the tape 11 while escaping the air to the outside, thereby preventing air from being mixed between the two. It becomes possible to do.
- the plurality of spacers 17 arranged in a cross shape with the opening of the second air supply / exhaust pipe 14 as the center are formed on the upper surface of the lower chamber 6b. . For this reason, it is possible to prevent air from remaining when the second hermetic space 8 is in a reduced pressure atmosphere.
- the rubber sheet 10 is sucked into the second air supply / exhaust pipe 14 when air is sucked through the second air supply / exhaust pipe 14, as shown in FIG. 16A.
- the opening of the air supply / exhaust pipe 14 is closed. As a result, air cannot be sucked from the second hermetic space 8, and air remains.
- the second airtight space 8 becomes a positive pressure with respect to the first airtight space 7, and the rubber sheet 10 cannot be completely flattened.
- the second airtight space 8 is at a positive pressure with respect to the first airtight space 7, so that the second airtight space 8
- the rubber sheet 10 begins to expand at a relatively high speed, and the wafer 9 is pushed up at a higher speed than intended.
- the process proceeds to the medium-speed pasting step in step S3 in FIG. 5, and the pressing pressure of the wafer 9 on the tape 11 cannot be appropriately controlled.
- step S ⁇ b> 1 in FIG. 5 it is possible to prevent air from remaining in the second hermetic space 8 at the time of evacuation in step S ⁇ b> 1 in FIG. 5.
- step S ⁇ b> 2 and S ⁇ b> 3 9 and the pressing pressure of the wafer 9 against the tape 11 can be appropriately controlled.
- the height of the spacer 17 is not particularly limited, and can be appropriately determined according to the air suction pressure from the second airtight space 8 and the material of the rubber sheet 10.
- the arrangement shape of the spacer 17 is not limited to the cross shape, and may be other shapes such as a radial shape centered on the opening of the second air supply / exhaust pipe 14, for example.
- a plurality of spacers 17 may be discretely arranged around the opening of the second air supply / exhaust pipe 14 without giving regularity.
- the mesh cover 14a is attached to the opening of the second air supply / exhaust pipe 14, and therefore the rubber sheet 10 to the second air supply / exhaust pipe 14 is provided. It is possible to increase the effective cross-sectional area (the diameter of the second air supply / exhaust pipe 14) during air suction while preventing the suction of air.
- the tape applicator according to the present invention is applied to adhering a dicing tape to a semiconductor wafer.
- the present invention applies, for example, a protective tape to a glass plate. In addition to the case illustrated in the embodiment, it can be widely applied.
- the wafer 9 is attached to the tape 11 by three-stage speed switching of low speed application, medium speed application, and high speed application.
- the wafer 9 having a sufficient thickness, When the material is difficult to slip, the low speed sticking may be omitted and the operation may be started from the medium speed sticking.
- the rubber sheet 10 is slowly expanded using the natural leak on the second airtight space 8 side at the time of low speed application, but it is not always necessary to use the natural leak.
- the expansion speed of the rubber sheet 10 may be reduced.
- the nitrogen supply source 21 and the air supply source 22 are provided as a supply source which supplies gas to the 1st and 2nd airtight space 7 and 8, the 1st and 2nd airtight space 7 is provided. , 8 may be sufficient as long as it can pressurize and depressurize the first and second hermetic spaces 7, 8, and may be a gas other than nitrogen or air.
- the apparatus main body 2, the rubber sheet 10, and the tape frame 12 are formed in a cylindrical shape, a circular shape, and an annular shape, respectively, in accordance with the general shape of the semiconductor wafer.
- the shapes such as are not limited to these, and other shapes such as a rectangular shape may be employed.
- the supply port for supplying gas and the suction port for sucking are shared, but these should be provided separately. May be.
- An elastic sheet on which the object to be applied is placed, and a tape that holds the tape in the first airtight space and positions the tape at a predetermined distance from the tape application object placed on the elastic sheet.
- a holding member and an atmospheric pressure switching unit that switches between pressurization and decompression of the first and second hermetic spaces, and after the first and second hermetic spaces are in a vacuum state,
- a tape applying apparatus that pressurizes and inflates the elastic sheet, and pushes up the tape application object to be applied to the tape. When the tape application object is pushed up, a pressure amount of the second airtight space is increased. Control the elastic seat While the rate of inflation is gradually changed toward the low speed high speed, tape applying apparatus to paste the tape application object to the tape.
- the said elastic sheet is made by the 1st speed which can press this tape sticking target object to the said tape with the pressing pressure which is not damaged.
- the third speed is increased by closing the second hermetic space while maintaining the vacuum state of the first hermetic space.
- the container which has airtight space inside, and the said airtight space are partitioned into the 1st airtight space located above, and the 2nd airtight space located below, and tapes on this 1st airtight space side
- An elastic sheet on which the object to be applied is placed, and a tape that holds the tape in the first airtight space and positions the tape at a predetermined distance from the tape application object placed on the elastic sheet.
- a tape application method in which a second airtight space is pressurized to expand the elastic sheet, and the tape application object is pushed up and applied to the tape.
- the second airtight space Pressurization of space While gradually changing toward the high-speed control to the rate of expansion of the elastic sheet from a low speed to a tape sticking method to paste the tape application object to the tape.
- the said elastic sheet is carried out by the 1st speed which can press this tape sticking target object to the said tape with the pressing pressure which is not damaged.
- the tape according to appendix 10 wherein the tape is expanded, and then the expansion speed of the elastic sheet is switched to a second speed higher than the first speed, and the entire application surface of the tape application object is brought into contact with the tape. Pasting method.
- the third speed is increased by closing the second hermetic space while maintaining the vacuum state of the first hermetic space.
- the present invention can be used as a tape sticking apparatus and a tape sticking method used for attaching a dicing tape to a semiconductor wafer.
Abstract
Description
2 装置本体
3 給排気機構
4 制御部
4a タイマ
5 気密空間
6 チャンバ
6a 上側チャンバ
6b 下側チャンバ
7 第1の気密空間
7a 押さえリングの内側空間
7b 押さえリングの外側空間
8 第2の気密空間
9 半導体ウェハ
10 ゴムシート
11 ダイシング用テープ
12 テープフレーム
13 第1の給排気管
14 第2の給排気管
14a メッシュ蓋
15 真空度センサ
16 シールリング
17 スペーサ
18 押さえリング
19 溝
21 窒素供給源
22 空気供給源
23 真空ポンプ
24 第1の電磁弁
26 第2の電磁弁
27 第3の電磁弁
28 流量制御弁
Claims (10)
- 内部に気密空間を有する容器と、
前記気密空間を、上方に位置する第1の気密空間と下方に位置する第2の気密空間とに仕切り、該第1の気密空間側にテープ貼付対象物が載置される弾性シートと、
前記第1の気密空間内でテープを保持し、該テープを前記弾性シートに載置されたテープ貼付対象物から所定の距離を隔てて位置させるテープ保持部材と、
前記第1及び第2の気密空間の加圧及び減圧を切り替える気圧切替手段と、
を備え、
前記第1及び第2の気密空間を真空状態とした後、前記第2の気密空間を加圧して前記弾性シートを膨張させ、前記テープ貼付対象物を押し上げて前記テープに貼り付けるに際し、前記第2の気密空間の加圧量を制御して前記弾性シートの膨張速度を低速から高速に向けて段階的に変化させながら、前記テープ貼付対象物を前記テープに貼り付けることを特徴とするテープ貼付装置。 - 前記テープ貼付対象物と前記テープとの当接面積が所定量に達するまで、破損しない押し付け圧で該テープ貼付対象物を前記テープに押し付け可能な第1の速度によって前記弾性シートを膨張させ、その後、該弾性シートの膨張速度を前記第1の速度よりも速い第2の速度に切り替え、前記テープ貼付対象物の貼付面の全体を前記テープに当接させることを特徴とする請求項1に記載のテープ貼付装置。
- 前記第1の速度で弾性シートを膨張させるのに先立ち、該第1の速度よりも遅い第3の速度で前記弾性シートを膨張させ、前記テープ貼付対象物の中心部を前記テープに当接させることを特徴とする請求項2に記載のテープ貼付装置。
- 前記第1及び第2の気密空間を真空状態とした後、該第1の気密空間の真空状態を維持したまま該第2の気密空間を閉塞することで、前記第3の速度で前記弾性シートを膨張させることを特徴とする請求項3に記載のテープ貼付装置。
- 前記第2の速度で弾性シートを膨張させる際に、前記テープ貼付対象物と前記テープとが当接した状態で、これらを押し上げ、前記気密空間の天井面に押し当てることを特徴とする請求項2、3又は4に記載のテープ貼付装置。
- 前記弾性シートの下面と前記気密空間の底面との間に設けられ、前記第2の気密空間から気体を吸引する吸気口の周辺に配置されたスペーサを備えることを特徴とする請求項1乃至5のいずれかに記載のテープ貼付装置。
- 前記スペーサが複数設けられ、該複数のスペーサが前記吸気口を中心とした十字状又は放射状に配置されることを特徴とする請求項6に記載のテープ貼付装置。
- 前記第2の気密空間から気体を吸引する吸気口にメッシュ蓋を付設したことを特徴とする請求項1乃至7のいずれかに記載のテープ貼付装置。
- 前記テープの接着面にUV硬化樹脂製の接着剤が塗布され、
前記第1及び第2の気密空間を真空状態とする際に、該第1の気密空間に断続的に窒素を供給することを特徴とする請求項1乃至8のいずれかに記載のテープ貼付装置。 - 内部に気密空間を有する容器と、
前記気密空間を、上方に位置する第1の気密空間と下方に位置する第2の気密空間とに仕切り、該第1の気密空間側にテープ貼付対象物が載置される弾性シートと、
前記第1の気密空間内でテープを保持し、該テープを前記弾性シートに載置されたテープ貼付対象物から所定の距離を隔てて位置させるテープ保持部材と、
前記第1及び第2の気密空間の加圧及び減圧を切り替える気圧切替手段と、
を備えたテープ貼付装置を用いて、
前記第1及び第2の気密空間を真空状態とした後、前記第2の気密空間を加圧して前記弾性シートを膨張させ、前記テープ貼付対象物を押し上げて前記テープに貼り付けるに際し、前記第2の気密空間の加圧量を制御して前記弾性シートの膨張速度を低速から高速に向けて段階的に変化させながら、前記テープ貼付対象物を前記テープに貼り付けることを特徴とするテープ貼付方法。
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JP5893887B2 (ja) * | 2011-10-11 | 2016-03-23 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5869003B2 (ja) * | 2011-12-27 | 2016-02-24 | シャープ株式会社 | ロードロック装置及びそれを備えた真空処理装置 |
JP5687647B2 (ja) * | 2012-03-14 | 2015-03-18 | 株式会社東芝 | 半導体装置の製造方法、半導体製造装置 |
CN104037113B (zh) * | 2013-03-04 | 2018-05-08 | 中微半导体设备(上海)有限公司 | 等离子体处理腔室的供气装置以及去夹持方法 |
JP6053150B2 (ja) * | 2013-03-15 | 2016-12-27 | リンテック株式会社 | 光照射装置および照射方法 |
CN104692028B (zh) * | 2015-02-02 | 2017-04-05 | 电子科技大学 | 一种可选择真空吸附或电磁吸附的传送带吸附装置 |
JP5797863B1 (ja) * | 2015-05-29 | 2015-10-21 | オリジン電気株式会社 | 接合部材製造装置及び接合部材の製造方法 |
JP6573231B2 (ja) * | 2016-03-03 | 2019-09-11 | パナソニックIpマネジメント株式会社 | プラズマ処理方法 |
JP7000129B2 (ja) * | 2017-11-15 | 2022-01-19 | 芝浦メカトロニクス株式会社 | 成膜装置 |
KR102516339B1 (ko) | 2018-04-06 | 2023-03-31 | 삼성전자주식회사 | 광 조사기용 덮개 구조물과 이를 구비하는 광 조사장치 및 이를 이용한 다이 접착 방법 |
DE112018007513T5 (de) * | 2018-04-24 | 2021-03-11 | Disco Hi-Tec Europe Gmbh | Vorrichtung und Verfahren zum Aufbringen eines Schutzbandes auf einem Halbleiterwafer |
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JP2021129038A (ja) * | 2020-02-14 | 2021-09-02 | 株式会社ディスコ | テープ貼着装置 |
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CN105047586B (zh) | 2018-02-27 |
JP2011192859A (ja) | 2011-09-29 |
US20120312468A1 (en) | 2012-12-13 |
TWI532646B (zh) | 2016-05-11 |
KR20120125502A (ko) | 2012-11-15 |
US20160079098A1 (en) | 2016-03-17 |
TW201144156A (en) | 2011-12-16 |
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