JP5869003B2 - ロードロック装置及びそれを備えた真空処理装置 - Google Patents
ロードロック装置及びそれを備えた真空処理装置 Download PDFInfo
- Publication number
- JP5869003B2 JP5869003B2 JP2013551222A JP2013551222A JP5869003B2 JP 5869003 B2 JP5869003 B2 JP 5869003B2 JP 2013551222 A JP2013551222 A JP 2013551222A JP 2013551222 A JP2013551222 A JP 2013551222A JP 5869003 B2 JP5869003 B2 JP 5869003B2
- Authority
- JP
- Japan
- Prior art keywords
- load lock
- lock chamber
- vent
- chamber
- slow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012545 processing Methods 0.000 title claims description 121
- 238000000034 method Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 13
- 238000012546 transfer Methods 0.000 description 17
- 230000007423 decrease Effects 0.000 description 9
- 238000013022 venting Methods 0.000 description 6
- 230000032258 transport Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
2 真空処理室
3 ロードロック装置
4 ロードロック室
5 排気弁
6 排気ポンプ
7 ベントガス供給管
8 ベントバルブ
9 スローベント管
10 スローベント弁
13 支持台
14 排気口
15 スローベント手段
18 支持片
20 排気手段
21 ゲートバルブ
22 ゲートバルブ
24 大気搬送室
30 搬送手段
34 排気管
Claims (4)
- 内部を真空排気可能に構成され、処理対象物が収納されるロードロック室と、
前記ロードロック室の内部に収納され、前記処理対処物を支持する支持台と、
前記ロードロック室に設けられ、真空状態にある前記ロードロック室の内部にベントガスを供給して、大気圧状態に切り替えるスローベント手段と、
前記ロードロック室に接続され、該ロードロック室の内部に前記ベントガスを供給するベントガス供給管と
を備えるロードロック装置において、
前記支持台は、前記処理対象物を縦置きの状態で支持し、
前記スローベント手段は、前記ロードロック室に接続され、該ロードロック室の内部に前記ベントガスを供給するスローベント管を有し、
前記スローベント管と前記ベントガス供給管とが接続され、接続された一対の前記スローベント管と前記ベントガス供給管が、前記支持台に沿った方向に対して左右対称に配置され、
一対の前記ベントガス供給管を有し、前記スローベント管は、該一対のベントガス供給管の間に配置されていることを特徴とするロードロック装置。 - 前記スローベント手段は、前記スローベント管に設けられ、該スローベント管から前記ロードロック室へのベントガスの流入量を調節するスローベント弁を有することを特徴とする請求項1に記載のロードロック装置。
- 前記ロードロック室に形成され、該ロードロック室の内部のガスを該ロードロック室の外部へと排気するための排気口と、
前記排気口に接続された排気ポンプと
を更に備え、
前記排気口がメッシュ形状を有することを特徴とする請求項1または請求項2に記載のロードロック装置。 - 請求項1〜請求項3のいずれか1項に記載の前記ロードロック装置と、
前記ロードロック室から搬入されてくる前記処理対象物に対して、真空雰囲気下で所定の処理を施す真空処理室と
を備えることを特徴とする真空処理装置
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013551222A JP5869003B2 (ja) | 2011-12-27 | 2012-12-20 | ロードロック装置及びそれを備えた真空処理装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011286512 | 2011-12-27 | ||
JP2011286512 | 2011-12-27 | ||
JP2013551222A JP5869003B2 (ja) | 2011-12-27 | 2012-12-20 | ロードロック装置及びそれを備えた真空処理装置 |
PCT/JP2012/008175 WO2013099178A1 (ja) | 2011-12-27 | 2012-12-20 | ロードロック装置及びそれを備えた真空処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013099178A1 JPWO2013099178A1 (ja) | 2015-04-30 |
JP5869003B2 true JP5869003B2 (ja) | 2016-02-24 |
Family
ID=48696722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013551222A Expired - Fee Related JP5869003B2 (ja) | 2011-12-27 | 2012-12-20 | ロードロック装置及びそれを備えた真空処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5869003B2 (ja) |
KR (1) | KR101632043B1 (ja) |
CN (1) | CN104025278B (ja) |
WO (1) | WO2013099178A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6957576B2 (ja) * | 2015-05-15 | 2021-11-02 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ロードロックチャンバ、ロードロックチャンバを有する真空処理システム及びロードロックチャンバを排気する方法 |
JP6606551B2 (ja) * | 2015-08-04 | 2019-11-13 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法および記録媒体 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05175147A (ja) * | 1991-12-24 | 1993-07-13 | Tokyo Electron Ltd | 真空装置 |
JPH06318536A (ja) | 1993-05-10 | 1994-11-15 | Matsushita Electric Ind Co Ltd | 半導体製造装置 |
JPH08124993A (ja) | 1994-10-27 | 1996-05-17 | Kokusai Electric Co Ltd | 半導体製造装置のロードロック室 |
JP2000036529A (ja) * | 1998-07-21 | 2000-02-02 | Sharp Corp | 真空処理装置 |
JP2002231783A (ja) * | 2001-02-01 | 2002-08-16 | Matsushita Electric Ind Co Ltd | 半導体製造装置 |
JP2009030720A (ja) * | 2007-07-26 | 2009-02-12 | Tadashi Kamimura | ベントバルブ |
WO2011102405A1 (ja) * | 2010-02-18 | 2011-08-25 | 株式会社アルバック | 縦型真空装置及び処理方法 |
JP5126260B2 (ja) * | 2010-03-16 | 2013-01-23 | Necエンジニアリング株式会社 | テープ貼付装置及びテープ貼付方法 |
-
2012
- 2012-12-20 CN CN201280064260.4A patent/CN104025278B/zh not_active Expired - Fee Related
- 2012-12-20 KR KR1020147021162A patent/KR101632043B1/ko active IP Right Grant
- 2012-12-20 JP JP2013551222A patent/JP5869003B2/ja not_active Expired - Fee Related
- 2012-12-20 WO PCT/JP2012/008175 patent/WO2013099178A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JPWO2013099178A1 (ja) | 2015-04-30 |
KR20140107646A (ko) | 2014-09-04 |
CN104025278A (zh) | 2014-09-03 |
KR101632043B1 (ko) | 2016-06-20 |
WO2013099178A1 (ja) | 2013-07-04 |
CN104025278B (zh) | 2017-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101664939B1 (ko) | 로드록 장치 | |
JP2010283356A (ja) | 基板処理装置および半導体装置の製造方法 | |
KR20170000790A (ko) | 격납 유닛, 반송 장치, 및 기판 처리 시스템 | |
WO2006049055A1 (ja) | 基板処理装置および半導体デバイスの製造方法 | |
JP2017514305A (ja) | 真空処理システムのためのロードロックチャンバ、及び真空処理システム | |
JP6016931B2 (ja) | 基板処理装置、基板処理方法、及び半導体装置の製造方法 | |
JP2007095856A (ja) | 真空処理装置 | |
JP5869003B2 (ja) | ロードロック装置及びそれを備えた真空処理装置 | |
JP2009267012A (ja) | 真空処理装置及び真空処理方法 | |
JP5546654B2 (ja) | 基板処理装置、半導体製造方法、基板処理方法、及び異物除去方法 | |
JP2008202146A (ja) | 縦型化学気相成長装置及び該装置を用いた成膜方法 | |
JP4872675B2 (ja) | 処理装置 | |
JP2014192485A (ja) | 半導体装置の製造方法、基板処理方法及び基板処理装置 | |
JP2013171757A (ja) | 不活性ガスパージ方法 | |
JP5456804B2 (ja) | 搬送容器 | |
JP2007280885A (ja) | プラズマ処理装置 | |
JP2011159834A (ja) | ガス置換装置を備えた基板搬送装置、基板搬送システム、置換方法 | |
KR20190002415A (ko) | 기판을 프로세싱하기 위한 장치, 기판을 프로세싱하기 위한 프로세싱 시스템 및 기판을 프로세싱하기 위한 장치를 서비싱하기 위한 방법 | |
JP5848788B2 (ja) | 基板処理装置、半導体製造方法、基板処理方法 | |
KR20130016359A (ko) | 기판 처리 방법 및 기판 처리 시스템 | |
JP2012169534A (ja) | 基板処理装置及び半導体装置の製造方法 | |
TWI474373B (zh) | Airtight module and exhaust method of the airtight module | |
JP2005347667A (ja) | 半導体製造装置 | |
JP5337532B2 (ja) | 真空処理装置 | |
KR100724284B1 (ko) | 플라즈마 처리장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150915 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151111 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20151208 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160106 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5869003 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |