WO2013099178A1 - ロードロック装置及びそれを備えた真空処理装置 - Google Patents
ロードロック装置及びそれを備えた真空処理装置 Download PDFInfo
- Publication number
- WO2013099178A1 WO2013099178A1 PCT/JP2012/008175 JP2012008175W WO2013099178A1 WO 2013099178 A1 WO2013099178 A1 WO 2013099178A1 JP 2012008175 W JP2012008175 W JP 2012008175W WO 2013099178 A1 WO2013099178 A1 WO 2013099178A1
- Authority
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- WIPO (PCT)
- Prior art keywords
- load lock
- lock chamber
- chamber
- lock device
- processing
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
Definitions
- the present invention relates to a load lock device capable of suppressing adhesion of foreign matter (particles) to a processing object in a load lock chamber, and a vacuum processing device provided with the load lock device.
- vacuum processing such as sputtering, etching, and plasma CVD is performed.
- the interior of the vacuum processing chamber is temporarily returned to atmospheric pressure when an object to be processed such as a glass substrate is carried into or out of the processing chamber that performs vacuum processing. If this happens, a phenomenon such as gas adsorption on the inner wall of the vacuum processing chamber occurs. Therefore, it takes a very long time for the inside of the vacuum processing chamber to be ready for the next processing, and as a result, there is a problem that the processing capacity of the apparatus is greatly reduced. It was.
- a load lock device is provided, and only the inside of the load lock device is returned to the atmospheric pressure, whereby the object to be processed is carried into and out of the vacuum processing chamber via the load lock device. To be done.
- a load lock device for suppressing a decrease in yield due to such foreign matter. More specifically, for example, a load lock device including a gas diffusion plate for diffusing vent gas introduced into the load lock chamber has been proposed. And it is described that by providing such a gas diffusion plate, the flow rate of the introduced gas can be reduced to prevent the foreign matter from being rolled up (for example, see Patent Document 1).
- a load lock device has been proposed that includes an interference plate that is arranged so as to include the wafer support portion between the wafer support portion and the load lock exhaust port. Further, by providing such an interference plate, it is possible to suppress the turbulence of the air current around the wafer and exhaust gas isotropically around the wafer. (For example, refer to Patent Document 2).
- the present invention has been made in view of the above-described problems, and a load lock device capable of effectively suppressing adhesion of foreign matters to a processing object in a load lock chamber and a vacuum processing device including the load lock device.
- the purpose is to provide.
- the load lock device of the present invention is configured so that the inside thereof can be evacuated, a load lock chamber in which a processing object is stored, and a load lock chamber stored in the load lock chamber. And a support base provided in the load lock chamber, and a slow vent means for supplying a vent gas to the inside of the load lock chamber in a vacuum state and switching to an atmospheric pressure state. It is characterized by being arranged symmetrically.
- the air flow of the vent gas is constant in the entire load lock chamber (for example, the direction from the upper side to the lower side with respect to the processing object supported by the support base). Can be generated. Accordingly, it is possible to suppress the foreign matter from being rolled up due to the turbulence of the vent gas flow in the entire interior of the load lock chamber, thereby effectively suppressing the adhesion of the foreign matter to the processing object in the load lock chamber. Is possible. As a result, it is possible to suppress a decrease in the yield of the processing object.
- the slow vent means is connected to the load lock chamber and is provided in the slow vent pipe for supplying the vent gas to the inside of the load lock chamber, and from the slow vent pipe to the load lock chamber. And a slow vent valve that adjusts the amount of vent gas flowing into.
- the load lock device further includes an exhaust port formed in the load lock chamber for exhausting the gas inside the load lock chamber to the outside of the load lock chamber, and an exhaust pump connected to the exhaust port.
- the exhaust port may have a mesh shape.
- the support base may support the processing object in a vertically placed state.
- the load lock device of the present invention has an excellent characteristic that it can effectively suppress the adhesion of foreign matter to the processing object in the load lock chamber and suppress the decrease in the yield of the processing object. Yes. Therefore, the present invention is suitably used for a vacuum processing apparatus including a load lock device and a vacuum processing chamber that performs a predetermined process on a processing object carried in from the load lock chamber in a vacuum atmosphere. .
- the present invention it is possible to effectively suppress the adhesion of foreign matters to the processing object in the load lock chamber and to suppress the decrease in the yield of the processing object.
- FIG. 1 is a diagram showing an overall configuration of a vacuum processing apparatus according to an embodiment of the present invention
- FIG. 2 is a diagram showing a load lock device in the vacuum processing apparatus according to an embodiment of the present invention.
- the vacuum processing apparatus 1 of this embodiment includes a vacuum processing chamber 2, a load lock device 3, and an atmospheric transfer chamber 24.
- the vacuum processing chamber 2 is for performing predetermined processing (for example, sputtering, etching, plasma CVD, etc.) on a processing object S such as a glass substrate for a liquid crystal display device in a vacuum atmosphere. is there.
- predetermined processing for example, sputtering, etching, plasma CVD, etc.
- the atmospheric transfer chamber 24 transports the unprocessed processing object S to the load lock device 3, and carries in the processing object S that has been subjected to predetermined processing in the vacuum processing chamber 2 through the load lock device 3. It is what is done.
- the load lock device 3 returns the processing object S processed by the vacuum processing chamber 2 from the vacuum processing chamber 2 to the atmosphere via the load lock device 3 by returning the inside of the load lock device 3 from the vacuum state to the atmospheric pressure. While carrying out to the transfer chamber 24 and returning the inside of the load lock device 3 from the atmospheric pressure to the vacuum state, the processing object S is transferred from the atmospheric transfer chamber 24 to the vacuum processing chamber 2 via the load lock device 3. It is for carrying out.
- the load lock device 3 is configured to be evacuated inside, and is connected to the load lock chamber 4 in which the processing object S is stored and the load lock chamber 4.
- a vent gas supply pipe 7 for supplying vent gas to the inside of the chamber 4 and a vent valve 8 provided in the vent gas supply pipe 7 for adjusting the inflow amount of the vent gas from the vent gas supply pipe 7 to the load lock chamber 4 are provided.
- the load lock chamber 4 is formed in a container shape with a material such as aluminum.
- the vent gas supply pipe 7 is connected to a gas supply source (not shown).
- the load lock device 3 gradually supplies gas to the load lock chamber 4 (that is, gradually changes the gas supply amount to the load lock chamber 4).
- Means 15 are provided.
- the slow vent means 15 is provided in the load lock chamber 4 and gradually supplies a vent gas to the inside of the load lock chamber 4 in a vacuum state to switch to the atmospheric pressure state.
- the slow vent means 15 is connected to the vent gas supply pipe 7 and the load lock chamber 4, and is provided in the slow vent pipe 9 for supplying the vent gas into the load lock chamber 4 and the slow vent pipe 9. And a slow vent valve 10 that adjusts the amount of vent gas flowing into the load lock chamber 4.
- the load lock device 3 includes an exhaust means 20 for evacuating the inside of the load lock chamber 4 by exhausting the gas inside the load lock chamber 4.
- the exhaust means 20 is formed in the load lock chamber 4 and is connected to the exhaust port 14 for exhausting the gas inside the load lock chamber 4 to the outside of the load lock chamber 4 and exhausted.
- the load lock device 3 is housed in the load lock chamber 4 and includes a support base 13 that supports the processing object S. As shown in FIG. 2, the support base 13 is configured to support the processing object S in a vertically placed state (vertical placement), and is supported by a support piece 18 provided on the support base 13. The object S is configured to be supported substantially vertically.
- the load lock device 3 is attached to the support base 13 and includes a transport means 30 for transporting the processing object S (that is, transporting the support base 13).
- a gate valve 21 that can be opened and closed is provided between the vacuum processing chamber 2 and the load lock device 3, and between the load lock device 3 and the atmospheric transfer chamber 24.
- a gate valve 22 that can be opened and closed is provided.
- the above-described transfer means 30 is configured to transfer the processing object S between the vacuum processing chamber 2 and the load lock device 3. Similarly, in the state where the gate valve 22 is opened, the above-described transfer means 30 is configured to transfer the processing object S between the load lock device 3 and the atmospheric transfer chamber 24.
- the processing object S is transported in a vertically placed state, not horizontally placed (horizontal placed).
- the vacuum processing apparatus 1 is an apparatus that conveys and processes the object to be processed S upright with respect to the apparatus installation floor in a state where the processing object S is installed on the support base 13.
- the conveyance means 30 for example, a conveyance roller is used, and the processing target portion S supported by the support base 13 is conveyed by the conveyance means 30 in the direction of the arrow X shown in FIG. Yes.
- the conveyance means 30 will not be specifically limited if it can convey the process target S, It is good also as a structure which uses a conveyance belt etc. instead of a conveyance roller.
- a predetermined process for example, sputtering, etching, plasma CVD, or the like
- the processing target S such as a glass substrate for a liquid crystal display device (for example, sputtering).
- the gate valve 21 is opened, and the processing object S after the vacuum processing supported by the support base 13 is vacuum processed by the conveying means 30.
- the processing object S is conveyed from the chamber 2 to the load lock device 3 and is carried into the load lock chamber 4, and the processing object S is placed in the position shown in FIG. 1 inside the load lock chamber 4. It is fixed (step S2). Note that when the processing object S is carried into the load lock chamber 4, the gate valve 21 is closed.
- step S3 the load lock chamber 4 is vented (step S3). That is, since the load lock chamber 4 into which the processing object S after the vacuum processing is carried is in a vacuum state, in order to transfer the processing object S to the atmospheric transfer chamber 24, a load gas is used by using a vent gas. Vent 4 to atmospheric pressure.
- venting the load lock chamber 4 first, the slow vent valve 10 is opened, and the slow vent is performed for a predetermined time (for example, 3 to 5 seconds) while adjusting the amount of vent gas flowing into the load lock chamber 4. Next, the vent valve 8 is opened, and the main vent of the load lock chamber 4 is performed. When venting the load lock chamber 4, the exhaust valve 5 is in a closed state.
- the slow vent means 15 for slow venting the load lock chamber 4 is symmetrical with respect to the support base 13 (that is, the processing object S). It is characterized in that it is arranged.
- the air flow of the vent gas is made constant in the entire direction of the load lock chamber 4 (that is, in the direction from the upper side to the lower side with respect to the processing object S). Thus, it can be generated in the direction of the arrow Y shown in FIG.
- the processing object S is supported by the support base 13 in a vertically placed state (vertically placed), as shown in FIG.
- a vent gas stream since it is possible to remove the foreign matter already attached to the processing target S at the stage of the slow vent processing before the main vent processing is performed, the attachment of the foreign matter to the processing target S is further effective. Can be suppressed. As a result, it is possible to further suppress the decrease in the yield of the processing object S.
- the gate valve 22 is opened, and the processing object S after the vacuum processing supported by the support base 13 is transferred from the load lock chamber 4 to the atmospheric transfer chamber 24 by the transfer means 30.
- the processing object S is carried into the atmospheric transfer chamber 24 (step S4).
- Step S5 another processing object S supported by the support table 13 is transported from the atmospheric transport chamber 24 to the load lock chamber 4 by the transport means 30, and the processing object S is carried into the load lock chamber 4.
- Step S5 Note that when the processing object S is carried into the load lock chamber 4, the gate valve 22 is closed.
- step S6 the load lock chamber 4 is evacuated. That is, since the load lock chamber 4 into which the processing object S before vacuum processing is carried is in an atmospheric pressure state, the load lock chamber 4 is evacuated in order to transport the processing object S to the vacuum processing chamber 2. .
- the exhaust pump 6 is driven, and then the exhaust valve 5 is opened while the exhaust pump 6 is driven, and the load lock chamber 4 is evacuated through the exhaust port 14. .
- the present embodiment is characterized in that the exhaust port 14 has a mesh shape as shown in FIG.
- a cover for preventing foreign matters from being mixed is provided above the vacuum exhaust port.
- this cover when this cover is provided, the exhaust flow is disturbed when the load lock chamber is evacuated, and the foreign matter is wound up due to the disturbance of the exhaust flow inside the load lock chamber.
- the shape of the exhaust port 14 is made into a mesh shape instead of providing a foreign matter prevention cover, foreign matter can be prevented from entering the exhaust pump 6 from the load lock chamber 4.
- the load lock chamber 4 is evacuated, it is possible to prevent the foreign matter from being wound due to the turbulence of the exhaust flow inside the load lock chamber 4.
- the gate valve 21 is opened, and the processing object S before the vacuum processing supported by the support base 13 is transferred from the load lock chamber 4 to the vacuum processing chamber 2 by the transfer means 30. And the processing object S is carried into the vacuum processing chamber 2 (step S7).
- the gate valve 21 is closed.
- step S1-S7 is repeatedly performed, and it has the structure by which the vacuum processing of the several process target object S is performed.
- the processing object S is transported in a vertical (vertical) state.
- the processing object S is in a horizontal (horizontal) state. It is good also as a structure to convey. Also in this case, the same effect as the above-described embodiment can be obtained.
- a vacuum processing apparatus provided with a load lock device.
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
2 真空処理室
3 ロードロック装置
4 ロードロック室
5 排気弁
6 排気ポンプ
7 ベントガス供給管
8 ベントバルブ
9 スローベント管
10 スローベント弁
13 支持台
14 排気口
15 スローベント手段
18 支持片
20 排気手段
21 ゲートバルブ
22 ゲートバルブ
24 大気搬送室
30 搬送手段
34 排気管
Claims (5)
- 内部を真空排気可能に構成され、処理対象物が収納されるロードロック室と、
前記ロードロック室の内部に収納され、前記処理対処物を支持する支持台と、
前記ロードロック室に設けられ、真空状態にある前記ロードロック室の内部にベントガスを供給して、大気圧状態に切り替えるスローベント手段と
を備えるロードロック装置において、
前記スローベント手段が、前記支持台に対して左右対称に配置されていることを特徴とするロードロック装置。 - 前記スローベント手段は、前記ロードロック室に接続され、該ロードロック室の内部にベントガスを供給するスローベント管と、該スローベント管に設けられ、該スローベント管から前記ロードロック室へのベントガスの流入量を調節するスローベント弁とにより構成されていることを特徴とする請求項1に記載のロードロック装置。
- 前記ロードロック室に形成され、該ロードロック室の内部のガスを該ロードロック室の外部へと排気するための排気口と、
前記排気口に接続された排気ポンプと
を更に備え、
前記排気口がメッシュ形状を有することを特徴とする請求項1または請求項2に記載のロードロック装置。 - 前記支持台は、前記処理対象物を縦置きの状態で支持することを特徴とする請求項1~請求項3のいずれか1項に記載のロードロック装置。
- 請求項1~請求項4のいずれか1項に記載の前記ロードロック装置と、
前記ロードロック室から搬入されてくる前記処理対象物に対して、真空雰囲気下で所定の処理を施す真空処理室と
を備えることを特徴とする真空処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201280064260.4A CN104025278B (zh) | 2011-12-27 | 2012-12-20 | 装载闭锁装置和具备它的真空处理装置 |
JP2013551222A JP5869003B2 (ja) | 2011-12-27 | 2012-12-20 | ロードロック装置及びそれを備えた真空処理装置 |
KR1020147021162A KR101632043B1 (ko) | 2011-12-27 | 2012-12-20 | 로드록 장치 및 이를 구비한 진공처리장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011286512 | 2011-12-27 | ||
JP2011-286512 | 2011-12-27 |
Publications (1)
Publication Number | Publication Date |
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WO2013099178A1 true WO2013099178A1 (ja) | 2013-07-04 |
Family
ID=48696722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2012/008175 WO2013099178A1 (ja) | 2011-12-27 | 2012-12-20 | ロードロック装置及びそれを備えた真空処理装置 |
Country Status (4)
Country | Link |
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JP (1) | JP5869003B2 (ja) |
KR (1) | KR101632043B1 (ja) |
CN (1) | CN104025278B (ja) |
WO (1) | WO2013099178A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020038972A (ja) * | 2015-05-15 | 2020-03-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ロードロックチャンバ、ロードロックチャンバを有する真空処理システム及びロードロックチャンバを排気する方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101998578B1 (ko) * | 2015-08-04 | 2019-07-10 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05175147A (ja) * | 1991-12-24 | 1993-07-13 | Tokyo Electron Ltd | 真空装置 |
JP2000036529A (ja) * | 1998-07-21 | 2000-02-02 | Sharp Corp | 真空処理装置 |
JP2002231783A (ja) * | 2001-02-01 | 2002-08-16 | Matsushita Electric Ind Co Ltd | 半導体製造装置 |
JP2011192859A (ja) * | 2010-03-16 | 2011-09-29 | Nec Engineering Ltd | テープ貼付装置及びテープ貼付方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06318536A (ja) | 1993-05-10 | 1994-11-15 | Matsushita Electric Ind Co Ltd | 半導体製造装置 |
JPH08124993A (ja) | 1994-10-27 | 1996-05-17 | Kokusai Electric Co Ltd | 半導体製造装置のロードロック室 |
JP2009030720A (ja) * | 2007-07-26 | 2009-02-12 | Tadashi Kamimura | ベントバルブ |
WO2011102405A1 (ja) * | 2010-02-18 | 2011-08-25 | 株式会社アルバック | 縦型真空装置及び処理方法 |
-
2012
- 2012-12-20 JP JP2013551222A patent/JP5869003B2/ja not_active Expired - Fee Related
- 2012-12-20 CN CN201280064260.4A patent/CN104025278B/zh not_active Expired - Fee Related
- 2012-12-20 KR KR1020147021162A patent/KR101632043B1/ko active IP Right Grant
- 2012-12-20 WO PCT/JP2012/008175 patent/WO2013099178A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05175147A (ja) * | 1991-12-24 | 1993-07-13 | Tokyo Electron Ltd | 真空装置 |
JP2000036529A (ja) * | 1998-07-21 | 2000-02-02 | Sharp Corp | 真空処理装置 |
JP2002231783A (ja) * | 2001-02-01 | 2002-08-16 | Matsushita Electric Ind Co Ltd | 半導体製造装置 |
JP2011192859A (ja) * | 2010-03-16 | 2011-09-29 | Nec Engineering Ltd | テープ貼付装置及びテープ貼付方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020038972A (ja) * | 2015-05-15 | 2020-03-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ロードロックチャンバ、ロードロックチャンバを有する真空処理システム及びロードロックチャンバを排気する方法 |
Also Published As
Publication number | Publication date |
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JPWO2013099178A1 (ja) | 2015-04-30 |
CN104025278B (zh) | 2017-03-29 |
CN104025278A (zh) | 2014-09-03 |
KR101632043B1 (ko) | 2016-06-20 |
KR20140107646A (ko) | 2014-09-04 |
JP5869003B2 (ja) | 2016-02-24 |
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