WO2011070892A1 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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Publication number
WO2011070892A1
WO2011070892A1 PCT/JP2010/070254 JP2010070254W WO2011070892A1 WO 2011070892 A1 WO2011070892 A1 WO 2011070892A1 JP 2010070254 W JP2010070254 W JP 2010070254W WO 2011070892 A1 WO2011070892 A1 WO 2011070892A1
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Prior art keywords
layer
insulating layer
oxide semiconductor
forming
semiconductor layer
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PCT/JP2010/070254
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English (en)
French (fr)
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Shunpei Yamazaki
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Semiconductor Energy Laboratory Co., Ltd.
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Priority to KR1020137020034A priority Critical patent/KR101511076B1/ko
Publication of WO2011070892A1 publication Critical patent/WO2011070892A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/385—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO

Definitions

  • the present invention relates to a semiconductor device which includes a circuit including at least a semiconductor element such as a transistor as an element, and a manufacturing method thereof.
  • the present invention relates to an electronic device in which a power device mounted in a power circuit; a semiconductor integrated circuit including a memory, a thyristor, a converter, an image sensor, or the like; an electro-optical device typified by a liquid crystal display panel; or a light-emitting display device including an organic light-emitting element is included as a part.
  • a semiconductor device means any device which can function by utilizing semiconductor characteristics
  • an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.
  • Transistors formed over a glass substrate or the like have been manufactured using amorphous silicon, polycrystalline silicon, or the like, as typically seen in liquid crystal display devices. Although transistors manufactured using amorphous silicon have low field-effect mobility, they have an advantage of being able to use larger glass substrates. Further, although transistors manufactured using polycrystalline silicon have high field-effect mobility, they have a disadvantage of not being suitable for large glass substrates.
  • Patent Document 2 disclose a technique in which a transistor is manufactured using zinc oxide or an In-Ga-Zn-O-based oxide semiconductor as an oxide semiconductor and such a transistor is used as a switching element or the like in a pixel of a display device.
  • Patent Document 1 Japanese Published Patent Application No. 2007-123861
  • Patent Document 2 Japanese Published Patent Application No. 2007-96055 DISCLOSURE OF INVENTION
  • the field-effect mobility of a transistor manufactured using a conventional oxide semiconductor is 10 cm 2 /Vs to 20 cm 2 /Vs.
  • the field-effect mobility of a transistor manufactured using an oxide semiconductor is ten times or more as large as that of a transistor manufactured using amorphous silicon. Therefore, the transistor manufactured using an oxide semiconductor can provide a performance sufficient as a pixel switching element even in a large-sized display device.
  • An object of an embodiment of the present invention is to enable the manufacture of a transistor having a desirably high field-effect mobility through formation of an oxide semiconductor layer having improved characteristics as well as enabling the increase in size of the substrate and also to put a large-sized display device, a high-performance semiconductor device, or the like into practical use.
  • a feature of an embodiment of the present invention is, in a transistor using an oxide semiconductor layer for a channel formation region, that an insulating layer in contact with the oxide semiconductor layer and an insulating layer including hydrogen in contact with the insulating layer are stacked; and hydrogen in the insulating layer including hydrogen is supplied to at least one of an interface between a gate insulating layer and the oxide semiconductor layer, the oxide semiconductor layer, and the interface between the oxide semiconductor layer and the insulating layer, whereby characteristics of the transistor are improved.
  • Another embodiment of the present invention is a manufacturing method of a semiconductor device, including the steps of forming a gate electrode layer over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate insulating layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming an insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; forming an insulating layer including hydrogen over the insulating layer; and after forming the insulating layer including hydrogen, performing heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.
  • Another embodiment of the present invention is a manufacturing method of a semiconductor device including a step of, after forming the insulating layer, forming a back gate electrode over the insulating layer and in a region overlapping with the gate electrode layer.
  • Another embodiment of the present invention is a manufacturing method of a semiconductor device, including the steps of forming a gate electrode layer over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate insulating layer; forming an insulating layer functioning as a channel protective layer over part of the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer and the insulating layer; forming an insulating layer including hydrogen over the insulating layer, the source electrode layer, and the drain electrode layer; and after forming the insulating layer including hydrogen, performing heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.
  • Another embodiment of the present invention is a manufacturing method of a semiconductor device, including the steps of forming an oxide semiconductor layer over a substrate having an insulating surface; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming an insulating layer functioning as a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; forming a gate electrode layer over the insulating layer; forming an insulating layer including hydrogen over the insulating layer and the gate electrode layer; and after forming the insulating layer including hydrogen, performing heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.
  • a feature of an embodiment of the present invention is, in a transistor using an oxide semiconductor layer for a channel formation region, that characteristics of the transistor are improved by the steps of, after reducing the hydrogen concentration of the oxide semiconductor layer, forming an insulating layer including oxygen in contact with the oxide semiconductor layer; after performing heat treatment to oxidize an oxygen vacancy portion in the oxide semiconductor layer so that an i-type (intrinsic) or substantially i-type oxide semiconductor layer is formed, forming an insulating layer including hydrogen over the insulating layer including oxygen; and supplying hydrogen in the insulating layer including hydrogen to at least one of an interface between a gate insulating layer and the oxide semiconductor layer, the oxide semiconductor layer, and an interface between the oxide semiconductor layer and the insulating layer including oxygen.
  • i-type semiconductor means a semiconductor having a carrier density lower than 1 x 10 12 cm -3 , preferably lower than 1.45 x 10 10 cm -3 .
  • Another embodiment of the present invention is a manufacturing method of a semiconductor device, including the steps of forming a gate electrode layer over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate insulating layer; after forming the oxide semiconductor layer, performing first heat treatment so that a hydrogen concentration of the oxide semiconductor layer is reduced; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming an insulating layer including oxygen over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; after forming the insulating layer including oxygen, performing second heat treatment so that oxygen is supplied to the oxide semiconductor layer; forming an insulating layer including hydrogen over the insulating layer including oxygen; and after forming the insulating layer including hydrogen, performing third heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.
  • Another embodiment of the present invention is a manufacturing method of a semiconductor device including a step of, after forming the insulating layer including oxygen, forming a back gate electrode over the insulating layer including oxygen and in a region overlapping with the gate electrode layer.
  • Another embodiment of the present invention is a manufacturing method of a semiconductor device, including the steps of forming a gate electrode layer over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate insulating layer; after forming the oxide semiconductor layer, performing first heat treatment so that a hydrogen concentration of the oxide semiconductor layer is reduced; forming an insulating layer including oxygen functioning as a channel protective layer over part of the oxide semiconductor layer; after forming the insulating layer including oxygen, performing second heat treatment so that oxygen is supplied to the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer and the insulating layer including oxygen; forming an insulating layer including hydrogen over the insulating layer including oxygen, the source electrode layer, and the drain electrode layer; and after forming the insulating layer including hydrogen, performing third heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.
  • Another embodiment of the present invention is a manufacturing method of a semiconductor device, including the steps of forming an oxide semiconductor layer over a substrate having an insulating surface; after forming the oxide semiconductor layer, performing first heat treatment so that a hydrogen concentration of the oxide semiconductor layer is reduced; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming an insulating layer including oxygen functioning as a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; after forming the insulating layer including oxygen, performing second heat treatment so that oxygen is supplied to the oxide semiconductor layer; forming a gate electrode layer over the insulating layer including oxygen; forming an insulating layer including hydrogen over the insulating layer including oxygen and the gate electrode layer; and after forming the insulating layer including hydrogen, performing third heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.
  • Heat treatment at a temperature higher than or equal to 150 °C and lower than or equal to 450 °C, preferably higher than or equal to 250 °C and lower than or equal to 440 °C performed after formation of the insulating layer including hydrogen over the insulating layer including oxygen in contact with the oxide semiconductor layer enables supply of hydrogen in the insulating layer including hydrogen to at least one of the interface between the gate insulating layer and the oxide semiconductor layer, the oxide semiconductor layer, and the interface between the oxide semiconductor layer and the insulating layer including oxygen. Further, with the supplied hydrogen, a defect or a dangling bond included in the oxide semiconductor layer can be terminated. As a result, on-state current and field-effect mobility of the transistor can be increased.
  • the heat treatment is used as the heat treatment.
  • the RTA method a method using a lamp light source or a method in which heat treatment is performed in a short time while a substrate is moved in a heated gas can be employed. With the use of the RTA method, it is also possible to make the time needed for heat treatment shorter than 0.1 hours.
  • the insulating layer including oxygen is preferably a silicon oxide layer or a silicon oxynitride layer formed by a sputtering method or a CVD method, and it is particularly preferable to use a silicon oxide layer formed by a sputtering method.
  • the insulating layer including hydrogen is preferably a silicon nitride layer, a silicon nitride oxide layer, an aluminum nitride layer, or an aluminum nitride oxide layer formed by a sputtering method or a CVD method.
  • a silicon nitride layer or a silicon nitride oxide layer formed by a CVD method using at least silane and a gas including nitrogen (typically, a nitrogen gas, an ammonia gas, or the like) as a source gas is preferably used.
  • an aluminum nitride layer or an aluminum nitride oxide layer formed by a CVD method using at least aluminum hydride and a gas including nitrogen as a source gas is preferable because they include a comparatively large number of hydrogen atoms.
  • the insulating layer including hydrogen refers to an insulating layer that includes many hydrogen atoms as compared to the insulating layer in contact with the oxide semiconductor layer.
  • the hydrogen concentration of the insulating layer including hydrogen is higher than or
  • 21 3 22 3 equal to 1 x 10 atoms/cm , preferably higher than or equal to 1 x 10 atoms/cm , and further preferably higher than or equal to 1 x 10 " atoms/cm .
  • the oxide semiconductor layer is a metal oxide, and can be formed using an
  • In-Sn-Ga-Zn-O-based material which is a four-component metal oxide; an In-Ga-Zn-O-based material, an In-Sn-Zn-O-based material, an In-Al-Zn-O-based material, a Sn-Ga-Zn-O-based material, an Al-Ga-Zn-O-based material, or a Sn-Al-Zn-O-based material which are three-component metal oxides; an In-Zn-O-based material, a Sn-Zn-O-based material, an Al-Zn-O-based material, a Zn-Mg-O-based material, a Sn-Mg-O-based material, or an In-Mg-O-based material which are two-component metal oxides; or an In-O-based material, a Sn-O-based material, a Sn-O-based material, a
  • a material represented by In 0 3 (ZnO) m (m > 0) can be used.
  • M represents one or more metal elements selected from Ga, Al, Mn, and Co.
  • M can be Ga, Ga and Al, Ga and Mn, Ga and Co, or the like.
  • M represents one or more elements selected from elements of Group 13 such as gallium (Ga), aluminum (Al), and boron (B).
  • Ga gallium
  • Al aluminum
  • B boron
  • the contents of In and Zn are not zero.
  • the above-described expression includes In-Ga-Zn-O, In-Zn-O, and the like.
  • the oxide semiconductor layer can have an amorphous structure or a structure in which a crystalline region is included in an amorphous region.
  • the oxide semiconductor layer has an amorphous structure, characteristic variation among a plurality of elements can be reduced. Further, when the oxide semiconductor layer has a structure in which a crystalline region is included in an amorphous region, a transistor having high field-effect mobility and large on-state current can be obtained.
  • first heat treatment is performed in an atmosphere which includes little hydrogen and moisture (a nitrogen atmosphere, an oxygen atmosphere, a dry-air atmosphere (e.g., as for moisture, the dew point is -40 °C or lower, preferably -50 °C or lower), or the like) at a temperature higher than or equal to 400 °C and lower than or equal to 750 °C, preferably higher than or equal to 400 °C and lower than the strain point of the substrate, so that the hydrogen concentration of the oxide semiconductor layer is reduced.
  • a nitrogen atmosphere, an oxygen atmosphere, a dry-air atmosphere e.g., as for moisture, the dew point is -40 °C or lower, preferably -50 °C or lower
  • an insulating layer including oxygen in contact with the oxide semiconductor layer is formed, and then second heat treatment is performed in an inert gas atmosphere or an oxygen gas atmosphere (preferably at a temperature higher than or equal to 200 °C and lower than or equal to 450 °C, and for example at a temperature higher than or equal to 250 °C and lower than or equal to 350 °C), so that oxygen is supplied to an oxygen vacancy of the oxide semiconductor layer.
  • an i-type (intrinsic) or substantially i-type semiconductor layer is formed.
  • an insulating layer including hydrogen is formed over the insulating layer including oxygen.
  • third heat treatment is performed at a temperature higher than or equal to 150 °C and lower than or equal to 450 °C, preferably higher than or equal to 250 °C and lower than or equal to 440 °C, whereby hydrogen in the insulating layer including hydrogen is supplied to at least one of the interface between the gate insulating layer and the oxide semiconductor layer, the oxide semiconductor layer, and the interface between the oxide semiconductor layer and the insulating layer including oxygen.
  • the hydrogen terminates a defect or a dangling bond included in the oxide semiconductor layer. In this manner, transistor characteristics can be improved.
  • an impurity such as moisture or hydrogen included in the oxide semiconductor layer is reduced, so that the oxide semiconductor layer can be purified to become an i-type (intrinsic) or substantially i-type semiconductor layer.
  • the hydrogen concentration of the i-type (intrinsic) or substantially i-type oxide is reduced, so that the oxide semiconductor layer can be purified to become an i-type (intrinsic) or substantially i-type semiconductor layer.
  • the semiconductor layer is 1 x 10 cm or lower, preferably 1 x 10 cm or lower, and further preferably substantially 0 according to the measurement using secondary ion mass spectroscopy (SIMS).
  • the carrier density of the i-type (intrinsic) or substantially i-type oxide semiconductor is lower than 1 x 10 12 cm -3 , preferably lower than 1.45 x 10 10 cm -3 according to the Hall effect measurement or capacitance- voltage measurement (CV measurement). That is, the carrier density of the oxide semiconductor layer is nearly zero.
  • the band gap of the i-type (intrinsic) or substantially i-type oxide semiconductor is 2 eV or larger, preferably 2.5 eV or larger, and further preferably 3 eV or larger.
  • off-state current in the state where voltage between a gate electrode layer and a source electrode layer is approximately 0, that is, leakage current of the transistor is much smaller than that of a transistor including silicon having crystallinity.
  • off-state current refers to, in the case of an n-channel transistor for example, a current between the source and the drain when the gate-source voltage is -5 V.
  • Another embodiment of the present invention is a semiconductor device including a gate electrode layer over a substrate having an insulating surface; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; an insulating layer including oxygen in contact with the oxide semiconductor layer; and an insulating layer including hydrogen in contact with the insulating layer including oxygen.
  • the transistor may be a bottom-gate transistor, a top-gate transistor, or a bottom-contact transistor.
  • the bottom-gate transistor includes a gate electrode layer over a substrate, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer which overlaps with the gate electrode layer over the gate insulating layer, and a source electrode layer and a drain electrode layer over the oxide semiconductor layer.
  • the top-gate transistor includes an oxide semiconductor layer over a substrate, a gate insulating layer over the oxide semiconductor layer, a gate electrode layer which overlaps with the oxide semiconductor layer over the gate insulating layer, and a source electrode layer and a drain electrode layer.
  • the bottom-contact transistor includes a gate electrode layer over a substrate, a gate insulating layer over the gate electrode layer, a source electrode layer and a drain electrode layer over the gate insulating layer, and an oxide semiconductor layer which is over the source electrode layer and the drain electrode layer and overlaps with the gate electrode layer with the gate insulating layer positioned therebetween.
  • On-state current and field-effect mobility of the transistor can be improved. Further, off-state current is reduced and on-state current is increased, so that on/off ratio of the transistor can be increased. With the use of such a transistor, a large-sized display device, a high-performance semiconductor device, and the like can be realized.
  • FIG. 1 is a cross-sectional view illustrating an embodiment of the present invention
  • FIGS. 2 A to 2C are cross-sectional process views illustrating an embodiment of the present invention.
  • FIGS. 3Ato 3C are cross-sectional process views illustrating an embodiment of the present invention.
  • FIGS. 4Ato 4C are cross-sectional process views illustrating an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view illustrating an embodiment of the present invention.
  • FIGS. 6A to 6D are cross-sectional process views illustrating an embodiment of the present invention.
  • FIGS. 7A to 7D are cross-sectional process views illustrating an embodiment of the present invention.
  • FIGS. 8A and 8B are a top view and a cross-sectional view, respectively, illustrating an embodiment of the present invention.
  • FIGS. 9 A and 9B are a top view and a cross-sectional view, respectively, illustrating an embodiment of the present invention.
  • FIG. 10 is a cross-sectional view illustrating an embodiment of the present 12 2010/070254
  • FIGS. HA to HE illustrate examples of electronic devices
  • FIG. 12 illustrates an example of an electronic device. BEST MODE FOR CARRYING OUT THE INVENTION
  • the present invention can be applied to manufacture any kind of semiconductor devices including microprocessors, integrated circuits such as image processing circuits, RF tags, and semiconductor display devices.
  • a semiconductor device means any device which can function by utilizing semiconductor characteristics, and a semiconductor display device, a semiconductor circuit, and an electronic device are all included in the category of the semiconductor device.
  • the semiconductor display devices include the following in its category: liquid crystal display devices, light-emitting devices in which a light-emitting element typified by an organic light-emitting element (OLED) is provided for each pixel, electronic paper, digital micromirror devices (DMDs), plasma display panels (PDPs), field emission displays (FEDs), and other semiconductor display devices in which a circuit element including a semiconductor element is included in a driver circuit.
  • OLED organic light-emitting element
  • a gate electrode layer 101a is formed over a substrate 100, and a gate insulating layer 102 is formed over the gate electrode layer 101a.
  • An oxide semiconductor layer 106a is formed over the gate insulating layer 102, and a source or drain electrode layer 108a and a source or drain electrode layer 108b are formed over the oxide semiconductor layer 106a.
  • An insulating layer 112 including oxygen is formed over the source or drain electrode layer 108a, the source or drain electrode layer 108b, and the oxide semiconductor layer 106a. The insulating layer 112 including oxygen is in contact with a back channel of the oxide semiconductor layer 106a.
  • An insulating layer 116 including hydrogen is formed in contact with the insulating layer 112 including oxygen.
  • An interlayer insulating layer 118 functioning as a planarization film may be formed over the insulating layer 116 including hydrogen.
  • the transistor 150 described in this embodiment has a feature of including the insulating layer 112 including oxygen in contact with the oxide semiconductor layer 106a and the insulating layer 116 including hydrogen in contact with the insulating layer 112 including oxygen.
  • the substrate 100 needs to have at least heat resistance high enough to withstand heat treatment to be performed later.
  • a glass substrate manufactured by a fusion process or a float process can be used as the substrate 100.
  • a glass substrate whose strain point is higher than or equal to 730 °C is preferably used.
  • a substrate of a glass material such as aluminosilicate glass, aluminoborosilicate glass, or barium borosilicate glass is used, for example.
  • barium oxide (BaO) barium oxide
  • a glass substrate that is heat-resistant and of more practical use can be obtained. Therefore, a glass substrate containing BaO and B2O3 so that the amount of BaO is larger than that of B 2 0 3 is preferably used.
  • a substrate formed of an insulator such as a ceramic substrate, a quartz substrate, or a sapphire substrate may be used instead of the above glass substrate.
  • crystallized glass or the like can be used.
  • a metal substrate such as a stainless-steel alloy substrate, having a surface provided with an insulating layer, may also be applied.
  • a substrate formed from a flexible synthetic resin such as plastic
  • a plastic substrate include polyester typified by polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), polyimide, acrylonitrile-butadiene-styrene resin, polyvinyl chloride, polypropylene, polyvinyl acetate, acrylic resin, and the like.
  • PET polyethylene terephthalate
  • PES polyethersulfone
  • PEN polyethylene naphthalate
  • PC polycarbonate
  • PEEK polyetheretherketone
  • PSF polysulfone
  • PEI polyetherimide
  • PAR polyarylate
  • PBT polybutylene terephthalate
  • polyimide acrylonitrile-buta
  • the gate electrode layer 101a can be formed to have a single-layer structure or a stacked structure using a metal material such as molybdenum, titanium, chromium, tantalum, tungsten, neodymium, or scandium; a conductive layer of an alloy material which contains any of these metal materials as its main component; or a nitride which contains any of these metals.
  • a metal material such as molybdenum, titanium, chromium, tantalum, tungsten, neodymium, or scandium
  • a conductive layer of an alloy material which contains any of these metal materials as its main component or a nitride which contains any of these metals.
  • aluminum or copper can also be used as such a metal material if it can withstand the temperature of heat treatment to be performed in a later process.
  • Aluminum or copper is preferably used in combination with a refractory metal material so as to prevent problems of heat resistance and corrosion.
  • a two-layer structure in which a molybdenum layer is stacked over an aluminum layer a two-layer structure in which a molybdenum layer is stacked over a copper layer, a two-layer structure in which a titanium nitride layer or a tantalum nitride layer is stacked over a copper layer, or a two-layer structure in which a titanium nitride layer and a molybdenum layer are stacked is preferably used.
  • a stacked structure including an aluminum layer, an alloy layer of aluminum and silicon, an alloy layer of aluminum and titanium, or an alloy layer of aluminum and neodymium as a middle layer and also including any of a tungsten layer, a tungsten nitride layer, a titanium nitride layer, and a titanium layer as a top layer and a bottom layer, is preferably used.
  • a light-transmitting oxide conductive layer of indium oxide, an alloy of indium oxide and tin oxide, an alloy of indium oxide and zinc oxide, zinc oxide, zinc aluminum oxide, zinc aluminum oxynitride, zinc gallium oxide, or the like may be used as the gate electrode layer 101a, whereby the aperture ratio of a pixel portion in a display device can be increased.
  • the thickness of the gate electrode layer 101a is 10 nm to 400 nm, preferably 100 nm to 200 nm.
  • the gate insulating layer 102 can be formed to have a single-layer structure or a stacked structure including a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, a silicon nitride oxide layer, an aluminum oxide layer, an aluminum nitride layer, an aluminum oxynitride layer, an aluminum nitride oxide layer, or a tantalum oxide layer.
  • the thickness of the gate insulating layer 102 is not particularly limited but, for example, can be larger than or equal to 10 nm and less than or equal to 500 nm.
  • the gate insulating layer 102 may be formed using a high-k material such as hafnium silicate (HfSi(3 ⁇ 4), hafnium silicate to which nitrogen is added (HfSi x O y N Z ), hafnium aluminate to which nitrogen is added (HfA1 ⁇ 0 y N z ), hafnium oxide, or yttrium oxide, whereby gate leakage can be reduced.
  • a stacked structure in which a high-k material and one or more of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, a silicon nitride oxide layer, and an aluminum oxide layer are stacked can be used.
  • a dense and high-quality insulating layer having high withstand voltage which is formed by a high-density plasma CVD method with the use of microwaves (2.45 GHz), as the gate insulating layer 102 because the interface state between the oxide semiconductor layer 106a and the gate insulating layer 102 can be reduced and favorable interface properties can be obtained.
  • the gate insulating layer 102 may have a structure in which an insulating layer 16 0 070254
  • the insulating layer having a high barrier property for example, a silicon nitride layer, a silicon nitride oxide layer, an aluminum nitride layer, an aluminum nitride oxide layer, or the like can be given, for example.
  • the insulating layer having a barrier property When the insulating layer having a barrier property is used, impurities in an atmosphere, such as moisture or hydrogen, or impurities included in the substrate, such as an alkali metal or a heavy metal, can be prevented from entering the gate insulating layer 102, the oxide semiconductor layer 106a, the interface between the oxide semiconductor layer 106a and another insulating layer, or the vicinity thereof.
  • the insulating layer having a low content of nitrogen such as a silicon oxide layer or a silicon oxynitride layer is formed in contact with the oxide semiconductor layer 106a
  • the insulating layer formed using a material having a high barrier property can be prevented from being directly in contact with the oxide semiconductor layer.
  • the oxide semiconductor layer 106a is a metal oxide, and can be formed using an In-Sn-Ga-Zn-O-based material which is a four-component metal oxide; an In-Ga-Zn-O-based material, an In-Sn-Zn-O-based material, an In-Al-Zn-O-based material, a Sn-Ga-Zn-O-based material, an Al-Ga-Zn-O-based material, or a Sn-Al-Zn-O-based material which are three-component metal oxides; an In-Zn-O-based material, a Sn-Zn-O-based material, an Al-Zn-O-based material, a Zn-Mg-O-based material, a Sn-Mg-O-based material, or an In-Mg-O-based material which are two-component metal oxides; or an In-O-based material, a Sn-O-based material, a Zn-O-based material,
  • a material represented by In 0 3 (ZnO) m (m > 0) can be used.
  • M represents one or more metal elements selected from Ga, Al, Mn, and Co.
  • M can be Ga, Ga and Al, Ga and Mn, Ga and Co, or the like.
  • M represents one or more elements selected from elements of Group 13 such as gallium (Ga), aluminum (Al), and boron (B).
  • Ga gallium
  • Al aluminum
  • B boron
  • the contents of In and Zn are not zero.
  • the above-described expression includes In-Ga-Zn-O, In-Zn-O, and the like.
  • the oxide semiconductor layer 106a can have an amorphous structure containing no crystalline component or a structure in which a crystalline region is included in an amorphous region.
  • the structure in which a crystalline region is included in an amorphous region includes a crystalline region having a crystal grain size greater than or equal to 1 nm and less than or equal to 20 nm (typically, greater than or equal to 2 nm and less than or equal to 4 nm) in an amorphous region.
  • characteristic variation among a plurality of elements can be reduced.
  • the source or drain electrode layer 108a and the source or drain electrode layer 108b are formed using a metal element selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, tungsten, and yttrium; an alloy containing any of these metal elements as a component; an alloy containing these metal elements in combination; or the like.
  • one or more metal elements selected from manganese, magnesium, zirconium, and beryllium can be used.
  • the source or drain electrode layer 108a and the source or drain electrode layer 108b can have a single-layer structure or a stacked structure of two or more layers.
  • the source or drain electrode layer 108a and the source or drain electrode layer 108b can have a single-layer structure of an aluminum layer containing silicon; a two-layer structure in which a titanium layer is stacked over an aluminum layer; a two-layer structure in which a titanium layer is stacked over a tungsten layer; or a three-layer structure in which a titanium layer, an aluminum layer, and a titanium layer are stacked in this order.
  • a layer which contains aluminum and one or more elements selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium may be used.
  • An alloy layer or a nitride layer of such a layer may be used.
  • the source or drain electrode layer 108a and the source or drain electrode layer 108b can be formed using a light-transmitting conductive layer such as an indium tin oxide layer, an indium oxide layer containing tungsten oxide, an indium zinc oxide layer containing tungsten oxide, an indium oxide layer containing titanium oxide, an indium tin oxide layer containing titanium oxide, an indium zinc oxide layer, or an indium tin oxide layer to which silicon oxide is added. It is also possible to employ a stacked structure of the above-described light-transmitting conductive layer and the above-described metal element.
  • the insulating layer 112 including oxygen is formed using an insulating layer including oxygen, such as a silicon oxide layer or a silicon oxynitride layer. It is preferable to form the insulating layer 112 including oxygen by a sputtering method or a CVD method, and is particularly preferable to form a silicon oxide layer by a sputtering method as the insulating layer 112 including oxygen.
  • the insulating layer 116 including hydrogen is formed using an insulating layer including hydrogen, such as a silicon nitride layer, a silicon nitride oxide layer, an aluminum nitride layer, an aluminum nitride oxide layer, or the like.
  • the hydrogen concentration of the insulating layer 116 including hydrogen is higher than or equal to 1 x 10 atoms/cm , preferably higher than or equal to 1 x 10 " atoms/cm , and further preferably higher than or equal to 1 x 10 23 atoms/cm 3 .
  • the insulating layer 116 including hydrogen is preferably formed by a sputtering method or a CVD method.
  • hydrogen in the insulating layer 116 including hydrogen is diffused into or supplied to at least the oxide semiconductor layer 106a and terminates a defect or a dangling bond included in at least one of the oxide semiconductor layer 106a, an interface between the gate insulating layer 102 and the oxide semiconductor layer 106a, and the interface between the oxide semiconductor layer 106a and the insulating layer 112 including oxygen.
  • defects in the oxide semiconductor layer 106a are reduced.
  • on-state current and field-effect mobility of the transistor are increased.
  • a transistor having high field-effect mobility and large on-state current can be realized. Further, a transistor having small off-state current, high field-effect mobility, and large on-state current can be realized.
  • FIGS. 2A to 2C a manufacturing method of the transistor 150, which is an example of the structure of a semiconductor device, will be described with reference to FIGS. 2A to 2C, FIGS. 3A to 3C, and FIGS. 4A to 4C.
  • a conductive layer 101 is formed over a substrate 100 (see FIG. 2A).
  • any substrate can be used for the substrate 100 as long as it is a substrate having an insulating surface, and a glass substrate can be used, for example. Further, it is preferable that the glass substrate be a non-alkali glass substrate.
  • a glass material such as aluminosilicate glass, aluminoborosilicate glass, barium borosilicate glass, or the like is used, for example.
  • an insulating substrate formed using an insulator such as a ceramic substrate, a quartz substrate, or a sapphire substrate, a semiconductor substrate which is formed using a semiconductor material such as silicon and whose 20 10 070254
  • a conductive substrate which is formed using a conductor such as metal or stainless steel and whose surface is covered with an insulating material can be used.
  • a substrate formed from a flexible synthetic resin such as plastic
  • a plastic substrate include polyester typified by polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), polyimide, acrylonitrile-butadiene-styrene resin, polyvinyl chloride, polypropylene, polyvinyl acetate, acrylic resin, and the like.
  • PET polyethylene terephthalate
  • PES polyethersulfone
  • PEN polyethylene naphthalate
  • PC polycarbonate
  • PEEK polyetheretherketone
  • PSF polysulfone
  • PEI polyetherimide
  • PAR polyarylate
  • PBT polybutylene terephthalate
  • polyimide acrylonitrile-buta
  • the conductive layer 101 can be formed using a PVD method such as a sputtering method, or a CVD method such as a plasma CVD method.
  • the conductive layer 101 can be formed using an element selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten, an alloy including any of these elements as a component, or the like.
  • a material including one or more of manganese, magnesium, zirconium, and beryllium may be used.
  • a material including aluminum and one or more of elements selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium may be used.
  • the conductive layer 101 may be formed using a conductive metal oxide.
  • a conductive metal oxide indium oxide (ln 2 0 3 ), tin oxide (Sn0 2 ), zinc oxide (ZnO), an indium oxide-tin oxide alloy (In 2 0 3 -Sn0 2 , which is abbreviated to ITO in some cases), an indium oxide-zinc oxide alloy (In 2 0 3 -ZnO), or any of these metal oxide materials in which silicon or silicon oxide is included can be used.
  • the conductive layer 101 may have a single-layer structure or a stacked structure of two or more layers.
  • heat treatment at a relatively high temperature is performed after formation of the 21 2010/070254
  • the conductive layer 101 is preferably formed using a material having high heat resistance.
  • a material having high heat resistance titanium, tantalum, tungsten, molybdenum, and the like can be given, for example.
  • Polysilicon whose conductivity is increased by addition of an impurity element, or the like can also be used.
  • the conductive layer 101 is selectively etched to form a gate electrode layer 101a, and a gate insulating layer 102 covering the gate electrode layer 101a is formed (see FIG. 2B).
  • ultraviolet light KrF laser light, or ArF laser light is preferably used.
  • extreme ultraviolet light whose wavelength is several nanometers to several tens of nanometers, which is extremely short.
  • Light exposure using extreme ultraviolet light has a feature of high resolution and large depth of focus and, therefore, is appropriate for miniaturization.
  • the gate insulating layer 102 can be formed using a CVD method, a sputtering method, or the like.
  • the gate insulating layer 102 is preferably formed so as to include silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, hafnium oxide, tantalum oxide, or the like.
  • the gate insulating layer 102 may have either a single-layer structure or a stacked structure.
  • the thickness of the gate insulating layer 102 is not particularly limited but, for example, can be larger than or equal to 10 nm and less than or equal to 500 nm.
  • the gate insulating layer 102 may be formed using a high-k material such as hafnium silicate (HfSiO x ), hafnium silicate to which nitrogen is added (HfSi ⁇ O y N Z/ ), hafnium aluminate to which nitrogen is added (HfAl x O y N r ), hafnium oxide, or yttrium oxide, whereby gate leakage can be reduced.
  • a stacked structure in which a high-k material and one or more of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, a silicon nitride oxide layer, and an aluminum oxide layer are stacked can be used.
  • the gate insulating layer 102 is preferably formed so as to include as few hydrogen or water as possible.
  • the gate insulating layer 102 be formed in a state where moisture remaining in the treatment chamber is removed.
  • an entrapment vacuum pump such as a cryopump, an ion pump, or a titanium sublimation pump is preferably used.
  • a turbo pump provided with a cold trap may be used in order to remove moisture remaining in the treatment chamber. From the treatment chamber evacuated with a cryopump or the like, hydrogen, water, or the like is sufficiently removed; thus, the concentration of an impurity in the gate insulating layer 102 can be reduced.
  • a high-density plasma CVD method using a microwave is favorable because the high-quality gate insulating layer 102 which is dense and has high withstand voltage can be formed.
  • a close contact between an oxide semiconductor layer and a high-quality gate insulating layer reduces interface states and produces desirable interface characteristics. It is particularly preferable to use a high-density plasma apparatus which can realize a plasma density higher than or equal to 1 x 10 n /cm 3 .
  • the gate insulating layer 102 When the gate insulating layer 102 is formed, it is desirable to use a high-purity gas in which an impurity such as hydrogen or water is reduced so that the concentration thereof is decreased to approximately a value expressed in the unit "ppm" (preferably,
  • an oxide semiconductor layer 106 is formed over the gate insulating layer 102 (see FIG. 2C).
  • the oxide semiconductor layer 106 can be formed using an In-Sn-Ga-Zn-O-based material which is a four-component metal oxide; an In-Ga-Zn-O-based material, an In-Sn-Zn-O-based material, an In-Al-Zn-O-based material, a Sn-Ga-Zn-O-based material, an Al-Ga-Zn-O-based material, or a Sn-Al-Zn-O-based material which are three-component metal oxides; an In-Zn-O-based material, a Sn-Zn-O-based material, an Al-Zn-O-based material, a Zn-Mg-O-based material, a Sn-Mg-O-based material, or an In-Mg-O-based material which are two-component metal oxides; or an In-O-based material, a Sn-O-based material, a Zn-O-based material, or the like which are one-com
  • an In-Ga-Zn-O-based oxide semiconductor material has sufficiently high resistance when there is no electric field and thus off-state current can be sufficiently small.
  • the In-Ga-Zn-O-based oxide semiconductor material is suitable for a semiconductor material used in a semiconductor device.
  • In-Ga-Zn-O-based oxide semiconductor material one represented by InGa0 3 (ZnO) m (m>0) is given.
  • M denotes one or more of metal elements selected from gallium (Ga), aluminum (AT), iron (Fe), nickel (Ni), manganese (Mn), cobalt (Co), and the like.
  • M may be Ga, Ga and Al, Ga and Fe, Ga and Ni, Ga and Mn, Ga and Co, or the like. Note that the above-described compositions are derived from the crystal structures that the oxide semiconductor material can have and are only examples.
  • an amorphous oxide semiconductor layer is formed by a sputtering method using a target for depositing an
  • an oxide semiconductor contained in the target for depositing an oxide semiconductor has a relative density of 80 % or more, preferably 95 % or more, and further preferably 99.9 % or more.
  • the oxide semiconductor layer 106 can be formed dense.
  • the atmosphere in which the oxide semiconductor layer 106 is formed is preferably a rare gas (typically, argon) atmosphere, an oxygen atmosphere, or a mixed atmosphere of a rare gas (typically, argon) and oxygen.
  • a high-purity gas atmosphere for example, from which an impurity such as hydrogen, water, a hydroxyl group, or hydride is removed so that the concentration thereof is decreased to approximately a value expressed in the unit "ppm" (preferably, "ppb").
  • the substrate is held in a treatment chamber that is maintained at reduced pressure and the substrate temperature is set to a temperature higher than or equal to 100 °C and lower than or equal to 600 °C, preferably higher than or equal to 200 °C and lower than or equal to 400 °C. Then, a sputtering gas from which hydrogen and water are removed is introduced into the treatment chamber while moisture remaining in the treatment chamber is removed, and the above-described target for depositing an oxide semiconductor is used; thus, the oxide semiconductor layer 106 is formed.
  • impurities contained in the oxide semiconductor layer 106 can be reduced. In addition, damage by sputtering can be reduced.
  • an entrapment vacuum pump is preferably used.
  • a cryopump, an ion pump, a titanium sublimation pump, or the like can be used.
  • a turbo pump provided with a cold trap may be used. Since hydrogen, water, or the like is removed from the treatment chamber which is evacuated with the cryopump, the concentration of impurities in the oxide semiconductor layer 106 can be reduced.
  • the deposition conditions of the oxide semiconductor layer 106 are as follows: the distance between the substrate and the target for depositing an oxide semiconductor is 170 mm, the pressure is 0.4 Pa, the direct-current (DC) power is 0.5 kW, and the atmosphere is an oxygen atmosphere (the proportion of oxygen is 100 %), an argon atmosphere (the proportion of argon is 100 ), or a mixed atmosphere of oxygen and argon.
  • the use of a pulse direct-current (DC) power supply is preferable because powder substances (also referred to as particles or dust) generated at the time of deposition can be reduced and the film thickness can be made uniform.
  • the thickness of the oxide semiconductor layer 106 is greater than or equal to 2 nm and less than or equal to 200 nm, and preferably greater than or equal to 5 nm and less than or equal to 30 nm. Note that the appropriate thickness varies depending on the material of the oxide semiconductor, the usage, or the like, and thus the thickness of the oxide semiconductor layer 106 may be determined as appropriate depending on the material, the usage, or the like.
  • the reverse sputtering is a method in which ions collide with a processing surface so that the surface is modified, in contrast to normal sputtering in which ions collide with a sputtering target.
  • An example of the method for making ions collide with a processing surface is a method in which high-frequency voltage is applied to the processing surface side in an argon atmosphere so that plasma is generated in the vicinity of a substrate. Note that an atmosphere of nitrogen, helium, oxygen, or the like may be used instead of an argon atmosphere.
  • the oxide semiconductor layer 106 is processed into an island-shaped oxide semiconductor layer 106a by using a method such as etching using a mask (see FIG. 3 A).
  • the island-shaped oxide semiconductor layer 106a is formed in a region overlapping with the gate electrode layer 101a.
  • etching the oxide semiconductor layer either dry etching or wet etching may be employed. It is needless to say that dry etching and wet etching can be used in combination.
  • the etching conditions e.g., an etching gas or an etchant, etching time, and temperature
  • etching conditions e.g., the amount of electric power applied to a coiled electrode, the amount of electric power applied to an electrode on the substrate side, and the electrode temperature on the substrate side
  • etching conditions e.g., the amount of electric power applied to a coiled electrode, the amount of electric power applied to an electrode on the substrate side, and the electrode temperature on the substrate side
  • An example of an etching gas which can be used for dry etching is a gas containing chlorine (a chlorine-based gas such as chlorine (Cl 2 ), boron chloride (BC1 3 ), silicon tetrachloride (SiCl 4 ), or carbon tetrachloride (CC1 4 )).
  • a chlorine-based gas such as chlorine (Cl 2 ), boron chloride (BC1 3 ), silicon tetrachloride (SiCl 4 ), or carbon tetrachloride (CC1 4 )
  • a gas containing fluorine a fluorine-based gas such as carbon tetrafluoride (CF 4 ), sulfur hexafluoride (SF 6 ), nitrogen trifluoride (NF 3 ), or trifluoromethane (CHF 3 )), hydrogen bromide (HBr), oxygen (0 2 ), any of these gases to which a rare gas such as helium (He) or argon (Ar) is added, or the like may be used.
  • An example of an etchant which can be used for wet etching includes a mixed solution of phosphoric acid, acetic acid, and nitric acid, or the like.
  • An etchant such as ITO07N (produced by KANTO CHEMICAL CO., INC.) may also be used.
  • heat treatment is preferably performed on the oxide semiconductor layer 106a.
  • Excessive hydrogen (including water and a hydroxyl group) in the oxide semiconductor layer 106a can be removed by this first heat treatment, whereby the structure of the oxide semiconductor layer can be ordered and defects in the oxide semiconductor layer 106a can be reduced.
  • the temperature of the first heat treatment is, for example, higher than or equal to 400 °C and lower than or equal to 750 °C, or higher than or equal to 400 °C and lower than or equal to the strain point of the substrate. Note that in the case where the amount of hydrogen contained in the oxide semiconductor layer 106a is sufficiently small right after the deposition, the heat treatment is not needed.
  • the heat treatment can be performed in such a way that, for example, the substrate 100 is introduced into an electric furnace in which a resistance heating element or the like is used and heated at 450 °C under a nitrogen atmosphere for an hour. During the heat treatment, the oxide semiconductor layer 106a is not exposed to the air, in order to prevent entry of water and hydrogen.
  • the heat treatment apparatus is not limited to an electric furnace; the heat treatment apparatus can be an apparatus that heats an object using thermal conduction or thermal radiation from a medium such as a heated gas or the like.
  • an RTA (rapid thermal annealing) apparatus such as a GRTA (gas rapid thermal annealing) apparatus or an LRTA (lamp rapid thermal annealing) apparatus can be used.
  • An LRTA apparatus is an apparatus for heating a process object by radiation of light (an 28 JP2010/070254
  • a GRTA apparatus is an apparatus for heat treatment using a high-temperature gas.
  • the gas an inert gas which does not react with a process object by heat treatment, such as nitrogen or a rare gas such as argon is used.
  • a GRTA process may be performed in the following manner.
  • the substrate is put in an inert gas atmosphere which has been heated to a high temperature of 650 °C to 700 °C, heated for several minutes, and taken out of the inert gas atmosphere.
  • the GRTA process enables a high-temperature heat treatment in a short time.
  • the GRTA process can be employed even when the temperature exceeds the upper temperature limit of the substrate because the heat treatment takes only a short time.
  • shrinkage of the substrate becomes a problem at a temperature higher than the upper temperature limit (strain point) but does not in the case of performing heat treatment in a short time.
  • the gas may be switched from the inert gas to a gas including oxygen during the process. This is because defects caused by an oxygen vacancy can be reduced by performing the first heat treatment in an atmosphere including oxygen.
  • an atmosphere that contains nitrogen or a rare gas (e.g., helium, neon, or argon) as its main component and does not contain water, hydrogen, or the like is preferably used.
  • the purity of nitrogen or a rare gas such as helium, neon, or argon introduced into a heat treatment apparatus is set to 6 N (99.9999 %) or more, preferably 7 N (99.99999 %) or more (i.e., the impurity concentration is 1 ppm or less, preferably 0.1 ppm or less).
  • the oxide semiconductor layer 106 is reduced or preferably removed, so that the oxide semiconductor layer 106 is purified so as to include as few impurities other than main components of the oxide semiconductor layer as possible.
  • the hydrogen concentration of the oxide semiconductor layer 106 at that time is preferably 1 x 10 16 cm -3 or lower.
  • the oxide semiconductor layer 106 preferably has a sufficiently low carrier density (e.g., less than 1 x 10 /cm , preferably less than 1.45 x 10 10 /cm 3 ) as compared to a general silicon wafer having a carrier density of approximately 1 x 10 14 /cm 3 .
  • the band gap is greater than or equal to 2 eV, preferably greater than or equal to 2.5 eV, further preferably greater than or equal to 3 eV.
  • the off-state current (current flowing between the source and the drain when the gate-source voltage is 0V or lower) is 1 x 10 ⁇ 13 A or smaller or the off-state current density (a value obtained by dividing an off-state current by a channel width of a transistor) is 100 aA/ ⁇ or lower, preferably 10 aA/ ⁇ or lower, and further preferably 1 aA/ ⁇ or lower ("a (atto)" denotes a factor of 10 "18 ), in the case where the channel length is 10 ⁇ and the thickness of the oxide semiconductor layer is 30 nm.
  • off-state resistance R the resistance when the transistor is off
  • p RAIL (R is the off-state resistance)
  • the off-state resistivity is preferably 1 x 10 9 ⁇ -m or higher (or 1 x 10 10 ⁇ -m).
  • a transistor in which such a purified oxide semiconductor layer 106 is used for a channel formation region can have a reduced off-state current.
  • the flow of the off-state current is caused by generation and recombination of electrons and holes through direct recombination or indirect recombination; however, since an oxide semiconductor layer has a wide band gap and high thermal energy is needed for electronic excitation, direct recombination and indirect recombination are less likely to occur.
  • holes which are minority carriers are substantially zero; accordingly, direct recombination and indirect recombination are less likely to occur and the off-state current can be substantially zero. Therefore, the transistor having excellent characteristics, in which the off-state current is reduced and the on-state current and field-effect mobility are increased, can be obtained.
  • the purified oxide semiconductor layer serves as a path and carriers are supplied by a source electrode and a drain electrode.
  • the electron affinity ⁇ and the Fermi level preferably the Fermi level corresponding to the intrinsic Fermi level of the oxide semiconductor and the work functions of the source electrode and the drain electrode are appropriately selected, carriers can be injected from the source electrode and the drain electrode with the carrier density of the oxide semiconductor layer reduced. Therefore, an n-channel transistor and a p-channel transistor can be manufactured appropriately.
  • the intrinsic carrier density of the purified oxide semiconductor is extremely low as compared to that of silicon.
  • the intrinsic carrier densities of silicon and an oxide semiconductor can be obtained using approximation expressions of Fermi-Dirac distribution and Boltzmann distribution.
  • the intrinsic carrier density of silicon n is 1.45 x 10 10 cm -3
  • the intrinsic carrier density of an oxide semiconductor (here, an In-Ga-Zn-0 layer) m is 1.2 x 10 ⁇ 7 cm -3 ; the former is approximately 10 17 times as high as the latter.
  • the intrinsic carrier density of an oxide semiconductor is extremely low as compared to that of silicon.
  • part of the oxide semiconductor layer 106 may crystallize in some cases so that a microcrystal or a polycrystal may be formed in the oxide semiconductor layer 106.
  • the first heat treatment can be performed on the oxide semiconductor layer 106 before being processed into the island-shaped oxide semiconductor layer 106a. In that case, after the first heat treatment, the substrate 100 is taken out of the heating apparatus and a photolithography step is performed.
  • the first heat treatment has an effect of removing hydrogen, water, and the like and can be referred to as dehydration treatment, dehydrogenation treatment, or the like.
  • the dehydration treatment or dehydrogenation treatment can also be performed after the oxide semiconductor layer is formed or after a source electrode layer and a drain electrode layer are stacked over the oxide semiconductor layer 106a. Such dehydration treatment or dehydrogenation treatment may be conducted more than once.
  • a conductive layer 108 is formed in contact with the oxide semiconductor layer 106a (see FIG. 3B).
  • the conductive layer 108 can be formed using a PVD method such as a sputtering method, or a CVD method such as a plasma CVD method.
  • the conductive layer 108 can be formed using an element selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten, an alloy including any of these elements as a component, or the like.
  • a material including one or more of manganese, magnesium, zirconium, and beryllium may be used.
  • a material including aluminum and one or more of elements selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium may be used.
  • the conductive layer 108 may be formed using a conductive metal oxide.
  • a conductive metal oxide indium oxide (In 2 03), tin oxide (Sn0 2 ), zinc oxide (ZnO), an indium oxide-tin oxide alloy (In 2 0 3 -Sn0 2 , which is abbreviated to ITO in some cases), an indium oxide-zinc oxide alloy (In 2 0 3 -ZnO), or any of these metal oxide materials in which silicon or silicon oxide is included can be used.
  • the conductive layer 108 may have a single-layer structure or a stacked structure of two or more layers.
  • a three-layer structure in which an aluminum film is stacked over a titanium film and a titanium film is stacked over the aluminum film or a three-layer structure in which an aluminum film is stacked over a molybdenum film and a molybdenum film is stacked over the aluminum film can be employed.
  • a two-layer structure in which an aluminum film and a tungsten film are stacked, a two-layer structure in which a copper film and a tungsten film are stacked, or a two-layer structure in which an aluminum film and a molybdenum film are stacked can be employed.
  • the conductive layer 108 may have a single-layer structure or a stacked structure of four or more layers.
  • a single-layer structure of a titanium film is favorably used, for example.
  • a favorable tapered shape can be obtained by etching to be performed later.
  • a three-layer structure including a titanium film, an aluminum film, and a titanium film is employed.
  • a material having a low ability of extracting oxygen may be used in a portion of the conductive layer 108, which is in contact with the oxide semiconductor layer 106a.
  • a material having a low ability of extracting oxygen a material having a low oxygen affinity
  • titanium nitride, tungsten nitride, and platinum can be given, for example.
  • the conductive layer 108 may have either a single-layer structure or a stacked structure.
  • a two-layer structure of a titanium nitride film and a titanium film, a two-layer structure of a titanium nitride film and a tungsten film, a two-layer structure of a titanium nitride film and a copper-molybdenum alloy film, a two-layer structure of a tantalum nitride film and a tungsten film, a two-layer structure of a tantalum nitride film and a copper film, a three-layer structure of a titanium nitride film, a tungsten film, and a titanium film, or the like can be employed, for example.
  • 106a can be prevented and an adverse effect on transistor characteristics can be reduced.
  • the conductive layer 108 is selectively etched to form a source or drain electrode layer 108a and a source or drain electrode layer 108b (see FIG. 3C). Further, an insulating layer may be formed over the conductive layer 108, and the insulating layer may be etched to form insulating layers having substantially the same shape as the source and drain electrode layers, over the source and drain electrode layers. In this case, capacitance (so-called gate capacitance) between the source and drain electrode layers and the gate electrode can be reduced.
  • the expression “substantially the same” does not necessarily mean “exactly the same” in a strict sense and includes the meaning of being considered as the same. For example, a difference made by a single etching process is acceptable. Further, the thickness does not need to be the same.
  • ultraviolet light, KrF laser light, or ArF laser light is preferably used.
  • light exposure for forming a mask is preferably performed with extreme ultraviolet light having a wavelength of several nanometers to several tens of nanometers, which is extremely short.
  • extreme ultraviolet light having a wavelength of several nanometers to several tens of nanometers, which is extremely short.
  • the channel length (L) of a transistor, which is completed later can be 10 nm to 1000 nm.
  • operation speed can be increased.
  • the off -state current of a transistor including the above-described oxide semiconductor is small; thus, an increase in power consumption due to miniaturization can be suppressed.
  • the materials and etching conditions of the conductive layer 108 and the oxide semiconductor layer 106a are adjusted as appropriate so that the oxide semiconductor layer 106a is not removed in etching of the conductive layer 108. Note that in some cases, the oxide semiconductor layer 106a is partly etched in the etching step and thus has a groove portion (a depression portion), depending on the materials and the etching conditions. [0116]
  • an etching step may be performed with the use of a resist mask formed using a multi-tone mask which is a light-exposure mask through which light is transmitted to have a plurality of intensities.
  • a resist mask formed with the use of a multi-tone mask has a plurality of thicknesses (has a stair-like shape) and further can be changed in shape by ashing; therefore, the resist mask can be used in a plurality of etching steps. That is, a resist mask corresponding to at least two kinds of different patterns can be formed by using one multi-tone mask.
  • the number of light-exposure masks can be reduced and the number of corresponding photolithography steps can also be reduced, whereby a process can be simplified.
  • an insulating layer 112 including oxygen is formed in contact with part of the oxide semiconductor layer 106a, and second heat treatment is performed (see FIG. 4A).
  • the insulating layer 112 including oxygen can be formed by a CVD method, a sputtering method, or the like.
  • the insulating layer 112 including oxygen is preferably formed so as to include silicon oxide, silicon oxynitride, aluminum oxide, hafnium oxide, tantalum oxide, or the like.
  • the insulating layer 112 including oxygen is preferably a silicon oxide film formed by a sputtering method.
  • the insulating layer 112 including oxygen may have a single-layer structure or a stacked structure.
  • the thickness of the insulating layer 112 including oxygen can have a thickness greater than or equal to 10 nm and less than or equal to 500 nm, preferably greater than or equal to 50 nm and less than or equal to 200 nm.
  • the second heat treatment is preferably performed in an inert gas atmosphere or an oxygen atmosphere.
  • the temperature of the heat treatment is set in the range of 200 °C to 450 °C, preferably 250 °C to 350 °C.
  • the heat treatment may be performed at 250 °C for 1 hour in a nitrogen atmosphere.
  • oxygen is supplied to the oxide semiconductor layer 106a, so that an oxygen vacancy in the oxide semiconductor layer 106a is reduced, whereby an i-type (intrinsic) 35 2010/070254
  • the second heat treatment can reduce variation in electric characteristics of the transistor.
  • an insulating layer 116 including hydrogen is formed over the insulating layer 112 including oxygen, and third heat treatment is performed (see FIG. 4B).
  • the insulating layer 116 including hydrogen can be formed by a CVD method, a sputtering method, or the like.
  • the insulating layer 116 including hydrogen is preferably formed using an insulating layer including hydrogen, such as a silicon nitride layer, a silicon nitride oxide layer, an aluminum nitride layer, an aluminum nitride oxide layer, or the like.
  • nitrogen typically, a nitrogen gas, an ammonia gas, or the like
  • the third heat treatment is performed in a nitrogen atmosphere at a temperature higher than or equal to 150 °C and lower than or equal to 450 °C, preferably higher than or equal to 250 °C and lower than or equal to 440 °C.
  • the atmosphere of the third heat treatment is not limited to the nitrogen atmosphere, and may be an oxygen atmosphere, a rare gas atmosphere, or a dry-air atmosphere.
  • hydrogen in the insulating layer 116 including hydrogen is diffused into or supplied to at least the oxide semiconductor layer 106a and terminates a defect or a dangling bond remaining in at least one of the oxide semiconductor layer 106a, an interface between the gate insulating layer 102 and the oxide semiconductor layer 106a, and the interface between the oxide semiconductor layer 106a and the insulating layer 112 including oxygen.
  • defects in the oxide semiconductor layer 106a are reduced.
  • on-state current and field-effect mobility of the transistor are increased.
  • the supply of hydrogen by the heat treatment is particularly effective when the heat treatment is performed on the i-type oxide semiconductor layer in which defects are sufficiently reduced.
  • part of the oxide semiconductor layer 106 may crystallize in some cases so that a microcrystal or a polycrystal may be formed in the oxide semiconductor layer 106.
  • an interlayer insulating layer 118 may be formed over the insulating layer 116 including hydrogen (see FIG. 4C).
  • the interlayer insulating layer 118 can be formed by a PVD method, a CVD method, or the like.
  • the interlayer insulating layer 118 can be formed using a material including an inorganic insulating material such as silicon oxide, silicon nitride oxide, silicon nitride, hafnium oxide, aluminum oxide, or tantalum oxide. Note that although the interlayer insulating layer 118 has a single-layer structure in this embodiment, an embodiment of the disclosed invention is not limited to this example.
  • the interlayer insulating layer 118 may have a stacked structure including two or more layers.
  • the interlayer insulating layer 118 is desirably formed so as to have a flat surface. This is because an electrode, a wiring, or the like can be favorably formed over the interlayer insulating layer 118 when the interlayer insulating layer 118 is formed so as to have a flat surface.
  • the transistor 150 is completed in which defects are terminated by diffusion of hydrogen which is included in the insulating layer 116 including hydrogen.
  • the transistor 150 illustrated in FIG. 5 is a channel-stop transistor.
  • stopper is provided in a region overlapping with a channel formation region of the oxide semiconductor layer 106a.
  • the oxide semiconductor layer 106a is formed as illustrated in FIG. 3A, and then an insulating film is formed to cover the oxide semiconductor layer 106a, by a sputtering method, a CVD method, or the like using a material including oxygen atoms, such as silicon oxide or silicon oxynitride. Then, the insulating film is selectively etched, so that the insulating layer 113 can be formed.
  • description of the process after FIG. 3B can be referred to.
  • the insulating layer 113 provided as a channel stopper in a region overlapping with the channel formation region of the oxide semiconductor layer 106a can prevent damage (a reduction in film thickness due to plasma or an etchant in etching) at the time of forming the source and drain electrode layers 108a and 108b. Accordingly, reliability of the transistor 150 can be increased.
  • a transistor having high field-effect mobility and large on-state current can be realized. Further, a transistor having small off-state current, high field-effect mobility, and large on-state current can be realized.
  • the transistor 150 which is an example of the structure of a semiconductor device of this embodiment will be described.
  • the oxide semiconductor layer 106a is formed over the substrate 100, and the source and drain electrode layers 108a and 108b are formed over the oxide semiconductor layer 106a.
  • the insulating layer 112 including oxygen is formed so as to cover the source and drain electrode layers 108a and 108b and the oxide semiconductor layer 106a.
  • the insulating layer 112 functions as a gate insulating layer.
  • the insulating layer 112 including oxygen is in contact with a channel of the oxide semiconductor layer 106a.
  • a gate electrode layer 114 is formed over the insulating layer 112 so as to overlap with the oxide semiconductor layer 106a.
  • the insulating layer 116 including hydrogen is formed so as to cover the insulating layer 112 including oxygen and the gate electrode layer 114.
  • the insulating layer 118 functioning as a planarization film may be formed over the insulating layer 116 including hydrogen.
  • the transistor 150 described in this embodiment includes the insulating layer 112 including oxygen, which is in contact with the oxide semiconductor layer 106a, and the insulating layer 116 including hydrogen, which is in contact with the insulating layer 112 including oxygen.
  • the insulating layer 102 functioning as a base film may be formed between the substrate 100 and the oxide semiconductor layer 106a.
  • the oxide semiconductor layer 106a is formed over the substrate 100 over which the insulating layer 102 functioning as a base film is formed. Then, the source and drain electrode layers 108a and 108b are formed over the oxide semiconductor layer 106a (see FIG. 6A).
  • the insulating layer 102 functioning as a base film can be formed using a CVD method, a sputtering method, or the like.
  • the insulating layer 102 is preferably formed so as to include silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, hafnium oxide, or tantalum oxide.
  • the insulating layer 102 may have either a single-layer structure or a stacked structure.
  • the thickness of the insulating layer 102 can be larger than or equal to 10 nm and less than or equal to 500 nm, for example. In the case of using a sputtering method or the like, it is preferable that the insulating layer 102 be formed in a state where moisture remaining in the treatment chamber is removed.
  • the oxide semiconductor layer is formed over the substrate 100 or the insulating layer 102 by a sputtering method or the like.
  • description of the oxide semiconductor layer 106a of FIG. 2C can be referred to; therefore, detailed description thereof will be omitted.
  • an amorphous oxide semiconductor layer is formed by a sputtering method using a target for depositing an In-Ga-Zn-O-based oxide semiconductor.
  • reverse sputtering in which plasma is generated with an argon gas introduced is preferably performed so that a material attached to the surface of the insulating layer 102 is removed.
  • the oxide semiconductor layer is processed into the island-shaped oxide semiconductor layer 106a using a method such as etching using a mask.
  • a method for etching the oxide semiconductor layer either dry etching or wet etching or both of them in combination may be employed.
  • description in Embodiment 2 can be referred to; therefore, detailed description thereof will be omitted.
  • the first heat treatment (dehydration treatment, dehydrogenation treatment) is preferably performed on the oxide semiconductor layer 106a.
  • Water (including a hydroxyl group), hydrogen, or the like in the oxide semiconductor layer 106a can be removed by the first heat treatment.
  • description in Embodiment 2 can be referred to; therefore, detailed description thereof will be omitted.
  • the first heat treatment can be performed on the oxide semiconductor layer before being processed into the island-shaped oxide semiconductor layer 106a. In that case, after the first heat treatment, the substrate 100 is taken out of the heating apparatus and a photolithography step is performed.
  • the insulating layer 112 is formed so as to cover the oxide semiconductor layer 106a and the source and drain electrode layers 108a and 108b (see FIG. 6B).
  • the insulating layer 112 functions as a gate insulating layer.
  • the insulating layer 112 is preferably formed so as to include oxygen atoms, for example, using silicon oxide, silicon oxynitride, or the like.
  • the insulating layer 112 is preferably formed using a sputtering method or a CVD method.
  • the second heat treatment is preferably performed on the oxide semiconductor layer 106a.
  • oxygen in the insulating layer 112 including oxygen is supplied to the oxide semiconductor layer 106a, so that an oxygen vacancy portion in the oxide semiconductor layer 106a is oxidized, whereby the i-type (intrinsic) or substantially i-type oxide semiconductor layer 106a can be formed.
  • the second heat treatment can reduce variation in electric characteristics of the transistor.
  • description in Embodiment 2 can be referred to; therefore, detailed description thereof will be omitted.
  • the gate electrode layer 114 is formed over the insulating layer 112 including oxygen so as to overlap with the oxide semiconductor layer 106a (see FIG. 6C).
  • a conductive layer is formed over the insulating layer 112 including oxygen by a sputtering method or a CVD method.
  • description of the conductive layer 101 of FIG. 2A can be referred to; therefore, detailed description thereof will be omitted.
  • the conductive layer is selectively etched, so that the gate electrode layer 114 is formed.
  • the insulating layer 116 including hydrogen is formed so as to cover the gate electrode layer 114, and the insulating layer 118 functioning as a planarization film is formed (see FIG. 6D).
  • a film including hydrogen is formed using silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, or the like.
  • the insulating layer 116 including hydrogen is preferably formed by a sputtering method or a CVD method.
  • the third heat treatment is performed on the oxide semiconductor layer 106a.
  • description in Embodiment 2 can be referred to; therefore, detailed description thereof will be omitted.
  • hydrogen in the insulating layer 116 including hydrogen is diffused into or supplied to at least the oxide semiconductor layer 106a and terminates a defect or a dangling bond included in at least one of the oxide semiconductor layer 106a, the interface between the oxide semiconductor layer 106a and the insulating layer 112 including oxygen, and an interface between the oxide semiconductor layer 106a and the insulating layer 102.
  • defects in the oxide semiconductor layer 106a are reduced.
  • on-state current and field-effect mobility of the transistor are increased.
  • the insulating layer 118 can be formed by a sputtering method, a CVD method, or the like.
  • description of FIG. 4C can be referred to; therefore, detailed description thereof will be omitted.
  • the transistor 150 including the oxide semiconductor layer 106a is completed.
  • the first heat treatment is performed in an atmosphere which includes little hydrogen and moisture (a nitrogen atmosphere, an oxygen atmosphere, a dry-air atmosphere (e.g., as for moisture, the dew point is -40 °C or lower, preferably -50 °C or lower), or the like) at a temperature higher than or equal to 400 °C and lower than or equal to 750 °C, preferably higher than or equal to 400 °C and lower than the strain point of the substrate, so that the hydrogen concentration of the oxide semiconductor layer 106a is reduced.
  • a nitrogen atmosphere, an oxygen atmosphere, a dry-air atmosphere e.g., as for moisture, the dew point is -40 °C or lower, preferably -50 °C or lower
  • a dry-air atmosphere e.g., as for moisture, the dew point is -40 °C or lower, preferably -50 °C or lower
  • the insulating layer 112 including oxygen in contact with the oxide semiconductor layer 106a is formed, and then the second heat treatment is performed in an inert gas atmosphere or an oxygen gas atmosphere (preferably at a temperature higher than or equal to 200 °C and lower than or equal to 450 °C, and for example at a temperature higher than or equal to 250 °C and lower than or equal to 350 °C), so that the oxygen vacancy portion in the oxide semiconductor layer 106a is oxidized.
  • the i-type (intrinsic) or substantially i-type semiconductor layer 106a is formed.
  • the insulating layer 116 including hydrogen is formed over the insulating layer 112 including oxygen.
  • the third heat treatment is performed at a temperature higher than or equal to 150 °C and lower than or equal to 450 °C, preferably higher than or equal to 250 °C and lower than 43 T JP2010/070254
  • hydrogen in the insulating layer 116 including hydrogen is supplied to at least one of the interface between the insulating layer 102 and the oxide semiconductor layer 106a, the oxide semiconductor layer 106a, and the interface between the oxide semiconductor layer 106a and the insulating layer 112 including oxygen.
  • the hydrogen terminates a defect or a dangling bond included in the oxide semiconductor layer 106a. In this manner, transistor characteristics can be improved.
  • part of the oxide semiconductor layer 106a may crystallize in some cases so that a microcrystal or a polycrystal may be formed in the oxide semiconductor layer 106a.
  • the oxide semiconductor layer 106a has a structure in which a crystalline region is included in an amorphous region, a transistor having high field-effect mobility and large on-state current can be obtained.
  • the oxide semiconductor layer 106a has an amorphous structure, characteristic variation among a plurality of elements can be reduced.
  • the transistor 150 which is an example of the structure of a semiconductor device of this embodiment will be described.
  • the gate electrode layer 101a is formed over the substrate 100, and the gate insulating layer 102 is formed over the gate electrode layer 101a.
  • the oxide semiconductor layer 106a is formed over the gate 44 10 070254
  • the insulating layer 102, and the source or drain electrode layer 108a and the source or drain electrode layer 108b are formed over the oxide semiconductor layer 106a.
  • the insulating layer 112 including oxygen is formed over the source and drain electrode layers 108a and 108b and the oxide semiconductor layer 106a.
  • the insulating layer 112 including oxygen is in contact with a back channel of the oxide semiconductor layer 106a.
  • the gate electrode layer 114 is formed over the insulating layer 112 including oxygen so as to overlap with the oxide semiconductor layer 106a.
  • the insulating layer 116 including hydrogen is formed so as to cover the gate electrode layer 114.
  • the insulating layer 118 functioning as a planarization film may be formed over the insulating layer 116 including hydrogen.
  • the transistor 150 described in this embodiment has a feature of including the insulating layer 112 including oxygen in contact with the oxide semiconductor layer 106a and the insulating layer 116 including hydrogen in contact with the insulating layer 112 including oxygen.
  • the gate electrode layer 114 functions as a so-called back gate.
  • the gate electrode layer 114 By the existence of the gate electrode layer 114, electric field in the oxide semiconductor layer 106a can be controlled, whereby electric characteristics of the transistor 150 can be controlled.
  • the gate electrode layer 114 may be electrically connected to another wiring, electrode, or the like so that a potential is applied to the gate electrode layer 114, or may be insulated so as to be in a floating state.
  • a "gate electrode” commonly means a gate electrode whose potential can be controlled intentionally; however, a “gate electrode” in this specification also means a gate electrode whose potential is not intentionally controlled.
  • the conductive layer which is insulated and in a floating state as described above is, in some cases, called a "gate electrode layer.”
  • the gate electrode layer 101a is formed over the substrate 100, and the gate insulating layer 102 is formed so as to cover the gate electrode layer 101a.
  • the oxide semiconductor layer 106a is formed over the gate insulating layer 102 so as to overlap with the gate, electrode layer 101a, and then the source or drain electrode layer 108a and the source or drain electrode layer 108b are formed (see FIG. 7A).
  • description of FIGS. 2A to 2C and FIGS. 3A to 3C can be referred to; therefore, detailed description thereof will be omitted.
  • the insulating layer 112 including oxygen is formed so as to cover the oxide semiconductor layer 106a and the source and drain electrode layers 108a and 108b (see FIG. 7B).
  • description of FIG. 4A can be referred to; therefore, detailed description thereof will be omitted.
  • the second heat treatment is preferably performed on the oxide semiconductor layer 106a.
  • oxygen in the insulating layer 112 including oxygen is supplied to the oxide semiconductor layer 106a, so that the oxygen vacancy portion in the oxide semiconductor layer 106a is oxidized, whereby the i-type (intrinsic) or substantially i-type oxide semiconductor layer 106a can be formed.
  • the second heat treatment can reduce variation in electric characteristics of the transistor.
  • description in Embodiment 2 can be referred to; therefore, detailed description thereof will be omitted.
  • the gate electrode layer 114 is formed over the insulating layer 112 including oxygen so as to overlap with the oxide semiconductor layer 106a (see FIG. 7C).
  • description of the gate electrode layer 114 of FIG. 6C can be referred to; therefore, detailed description thereof will be omitted.
  • the gate electrode layer 114 functions as a so-called back gate.
  • the insulating layer 116 including hydrogen is formed so as to cover the gate electrode layer 114, and the insulating layer 118 is formed (see FIG. 7D).
  • the third heat treatment is performed on the oxide semiconductor layer 106a.
  • description in Embodiment 2 can be referred to; therefore, detailed description thereof will be omitted.
  • hydrogen in the insulating layer 116 including hydrogen is diffused into or supplied to at least the oxide semiconductor layer 106a and terminates a defect or a dangling bond included in at least one of the oxide semiconductor layer 106a, the interface between the oxide semiconductor layer 106a and the insulating layer 112 including oxygen, and the interface between the oxide semiconductor layer 106a and the insulating layer 102.
  • defects in the oxide semiconductor layer 106a are reduced.
  • on-state current and field-effect mobility of the transistor are increased.
  • the transistor 150 including the oxide semiconductor layer 106a is completed.
  • the first heat treatment is performed in an atmosphere which includes little hydrogen and moisture (a nitrogen atmosphere, an oxygen atmosphere, a dry-air atmosphere (e.g., as for moisture, the dew point is -40 °C or lower, preferably -50 °C or lower), or the like) at a temperature higher than or equal to 400 °C and lower than or equal to 750 °C, preferably higher than or equal to 400 °C and lower than the strain point of the substrate, so that the hydrogen concentration of the oxide semiconductor layer 106a is reduced.
  • a nitrogen atmosphere, an oxygen atmosphere, a dry-air atmosphere e.g., as for moisture, the dew point is -40 °C or lower, preferably -50 °C or lower
  • a dry-air atmosphere e.g., as for moisture, the dew point is -40 °C or lower, preferably -50 °C or lower
  • the insulating layer 112 including oxygen in contact with the oxide semiconductor layer 106a is formed, and then the second heat treatment is performed in an inert gas atmosphere or an oxygen gas atmosphere (preferably at a temperature higher than or equal to 200 °C and lower than or equal to 450 °C, and for example at a temperature higher than or equal to 250 °C and lower than or equal to 350 °C), so that the oxygen vacancy portion in the oxide semiconductor layer 106a is oxidized.
  • the i-type (intrinsic) or substantially i-type semiconductor layer 106a is formed.
  • the insulating layer 116 including hydrogen is formed over the insulating layer 112 including oxygen.
  • the third heat treatment is performed at a temperature higher than or equal to 150 °C and lower than or equal to 450 °C, preferably higher than or equal to 250 °C and lower than or equal to 440 °C, whereby hydrogen in the insulating layer 116 including hydrogen is supplied to at least one of the interface between the gate insulating layer 102 and the oxide semiconductor layer 106a, the oxide semiconductor layer 106a, and the interface between the oxide semiconductor layer 106a and the insulating layer 112 including oxygen.
  • the hydrogen terminates a defect or a dangling bond included in the oxide semiconductor layer 106a. In this manner, transistor characteristics can be improved.
  • part of the oxide semiconductor layer 106a may crystallize in some cases so that a microcrystal or a polycrystal may be formed in the oxide semiconductor layer 106a.
  • the oxide semiconductor layer 106a has a structure in which a crystalline region is included in an amorphous region, a transistor having high field-effect mobility and large on-state current can be obtained.
  • the oxide semiconductor layer 106a has an amorphous structure, characteristic variation among a plurality of elements can be reduced.
  • a conductive layer is formed over a substrate having an insulating surface, and the conductive layer is selectively etched to form a gate electrode layer. Then, a gate insulating layer is formed so as to cover the gate electrode layer. This process can be conducted in a manner similar to that of Embodiment 2, and the corresponding description in Embodiment 2 can be referred to.
  • an amorphous oxide semiconductor layer is formed over the gate insulating layer, and is processed into an island-shaped oxide semiconductor layer by a method such as etching. This process is conducted using the method described in Embodiment 2 except the heat treatment of the oxide semiconductor layer. In this embodiment, heat treatment of the oxide semiconductor layer is not performed.
  • a conductive layer is formed in contact with the oxide semiconductor layer, and the conductive layer is selectively etched to form a source electrode layer and a drain electrode layer.
  • This process can be conducted in a manner similar to that of Embodiment 2, and the corresponding description in Embodiment 2 can be referred to.
  • an insulating layer in contact with part of the oxide semiconductor layer is formed.
  • the insulating layer may have any structure as long as hydrogen can be diffused and supplied from the insulating layer including hydrogen to the oxide semiconductor layer in a later step.
  • the insulating layer can be formed by a CVD method, a sputtering method, or the like.
  • the following method as described in Embodiment 2 may be employed: an insulating layer including oxygen is formed and heat treatment is performed to supply oxygen to the oxide semiconductor layer; in such a case, a method similar to that described in Embodiment 2 may be employed.
  • the insulating layer including hydrogen can be 49 2010/070254
  • the insulating layer including hydrogen is preferably formed using an insulating layer including hydrogen, such as a silicon nitride layer, a silicon nitride oxide layer, an aluminum nitride layer, an aluminum nitride oxide layer, or the like.
  • nitrogen typically, a nitrogen gas, an ammonia gas, or the like
  • the heat treatment is performed in a nitrogen atmosphere at a temperature higher than or equal to 150 °C and lower than or equal to 450 °C, preferably higher than or equal to 250 °C and lower than or equal to 440 °C.
  • the atmosphere of the heat treatment is not limited to the nitrogen atmosphere, and may be an oxygen atmosphere, a rare gas atmosphere, or a dry-air atmosphere.
  • hydrogen in the insulating layer including hydrogen is diffused into or supplied to at least the oxide semiconductor layer and terminates a defect or a dangling bond remaining in at least one of the oxide semiconductor layer, the interface between the gate insulating layer and the oxide semiconductor layer, and the interface between the oxide semiconductor layer and the insulating layer including oxygen.
  • defects in the oxide semiconductor layer are reduced, and transistor characteristics are improved.
  • on-state current and field-effect mobility of the transistor are increased.
  • present invention is not limited to this structure and a top-gate transistor or a transistor including a so-called back gate may be employed.
  • FIG. 8A and 8B an example of a liquid crystal display device is described as a semiconductor device which is an embodiment of the present invention.
  • a semiconductor device which is an embodiment of the present invention.
  • FIGS. 8A and 8B the appearance and a cross section of a liquid crystal display panel, which is an embodiment of a semiconductor device, will be described with reference to FIGS. 8A and 8B.
  • FIG. 8A and 8B the appearance and a cross section of a liquid crystal display panel, which is an embodiment of a semiconductor device.
  • FIG. 8A is a top view of a panel in which transistors 4010 and 4011 which include a semiconductor layer of an oxide material to which hydrogen is supplied, and a liquid crystal element 4013 are sealed between a first substrate 4001 and a second substrate
  • FIG. 8B corresponds to a cross-sectional view of FIG. 8 A along line M-N.
  • the sealant 4005 is provided so as to surround a pixel portion 4002, a signal line driver circuit 4003, and a scan line driver circuit 4004 which are provided over the first substrate 4001.
  • the second substrate 4006 is provided over the pixel portion 4002, the signal line driver circuit 4003, and the scan line driver circuit 4004.
  • the signal line driver circuit 4003, and the scan line driver circuit 4004 are sealed together with a liquid crystal layer 4008 by the first substrate 4001, the sealant 4005, and the second substrate 4006.
  • the pixel portion 4002, the signal line driver circuit 4003, and the scan line driver circuit 4004, which are provided over the first substrate 4001, include a plurality of transistors.
  • FIG. 8B illustrates the transistor 4010 included in the pixel portion 4002 and the transistor 4011 included in the scan line driver circuit 4004, as an example. Insulating layers 4020 and 4021 are provided over the transistor 4010, and the transistor 4011.
  • the transistors 4010 and 4011 are n-channel transistors.
  • a conductive layer 4040 is provided over the insulating layer 4021 at a position overlapping with a channel formation region of an oxide semiconductor layer in the transistor 4011 for the driver circuit.
  • the conductive layer 4040 is provided at the position overlapping with the channel formation region of the oxide semiconductor layer, whereby the amount of change in threshold voltage of the transistor 4011 in the BT test can be reduced.
  • the potential of the conductive layer 4040 may be the same or different from that of a gate electrode layer of the transistor 4011.
  • the conductive layer 4040 can also function as a second gate electrode layer. Further, the potential of the conductive layer 4040 may be GND or 0 V, or the conductive layer 4040 may be in a floating state.
  • a pixel electrode layer 4030 included in the liquid crystal element 4013 is electrically connected to the transistor 4010.
  • a counter electrode layer 4031 of the liquid crystal element 4013 is formed on the second substrate 4006. A portion where the pixel electrode layer 4030, the counter electrode layer 4031, and the liquid crystal layer 4008 overlap with one another corresponds to the liquid crystal element 4013. 52 70254
  • the pixel electrode layer 4030 and the counter electrode layer 4031 are provided with an insulating layer 4032 and an insulating layer 4033 functioning as alignment films, respectively, and the liquid crystal layer 4008 is sandwiched between the electrode layers with the insulating layers 4032 and 4033 arranged therebetween.
  • glass or plastics can be used as the second substrate 4006 as the second substrate 4006 as the second substrate 4006, glass or plastics can be used.
  • a spacer 4035 is a columnar spacer obtained by selective etching of an insulating layer and is provided in order to control the distance (a cell gap) between the pixel electrode layer 4030 and the counter electrode layer 4031.
  • a spherical spacer may be used.
  • the counter electrode layer 4031 is electrically connected to a common potential line formed over the substrate where the transistor 4010 is formed.
  • the counter electrode layer 4031 and the common potential line can be electrically connected to each other through conductive particles provided between the pair of substrates using the common connection portion. Note that the conductive particles are included in the sealant 4005.
  • a liquid crystal exhibiting a blue phase for which an alignment film is unnecessary may be used.
  • a blue phase is one of liquid crystal phases, and is generated just before a cholesteric phase changes into an isotropic phase while the temperature of cholesteric liquid crystal is increased. Since the blue phase is only generated within a narrow range of temperature, a liquid crystal composition containing a chiral agent at 5 wt% or more is used for the liquid crystal layer 4008 in order to improve the temperature range.
  • the liquid crystal composition including a liquid crystal exhibiting a blue phase and a chiral agent has a short response time of 1 msec or less and is optically isotropic; therefore, alignment treatment is unnecessary and viewing angle dependence is small.
  • a transistor that uses an oxide semiconductor layer particularly has a possibility that electric characteristics of the transistor may fluctuate significantly by the influence of static electricity and deviate from the designed range. Therefore, it is more effective to use a blue phase liquid crystal material for a liquid crystal display device including a transistor that uses an oxide semiconductor layer.
  • a blue phase is used, an embodiment of the present invention is not limited to the structure of FIGS. 8A and 8B, and a structure of a so-called horizontal electric field mode may be employed, in which an electrode layer corresponding to the counter electrode layer 4031 is formed on the substrate side which is provided with the pixel electrode layer 4030.
  • transmissive liquid crystal display device is described in this embodiment, an embodiment of the present invention can also be applied to a reflective liquid crystal display device or a transflective liquid crystal display device.
  • a polarizing plate is provided on the outer surface of the substrate (on the viewer side) and a coloring layer (a color filter) and an electrode layer used for a display element are sequentially provided on the inner surface of the substrate in the liquid crystal display device described in this embodiment
  • the polarizing plate may be provided on the inner surface of the substrate.
  • the stacked structure of the polarizing plate and the coloring layer is not limited to that of this embodiment and may be set as appropriate depending on materials of the polarizing plate and the coloring layer or conditions of the manufacturing process.
  • a light-blocking layer serving as a black matrix may be provided as needed.
  • the transistors are covered with insulating layers (insulating layers 4020, 4014, and 4021) functioning as a protective layer or a planarization insulating layer.
  • the protective layer is provided to prevent entry of contaminant impurities such as an organic substance, metal, and moisture existing in the air and is preferably a dense film.
  • the protective layer may be formed by a sputtering method to have a single-layer structure or a stacked structure 54 0 070254
  • a silicon oxide film including any of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, an aluminum oxynitride film, and an aluminum nitride oxide film.
  • the insulating layer having a stacked structure is formed as a protective layer.
  • a silicon oxide layer is formed using a sputtering method as the first-layer insulating layer 4020.
  • oxygen is added to the oxide semiconductor layer that is in contact with the protective layer, so that an oxygen vacancy can be reduced.
  • the insulating layer 4014 is formed as a second layer of the protective layer.
  • a silicon nitride layer containing hydrogen is formed using a plasma CVD method and is subjected to heat treatment, so that hydrogen is diffused into the oxide semiconductor layer.
  • the use of the silicon nitride layer as the protective layer can prevent ions of sodium or the like from entering a semiconductor region, so that variation in electric characteristics of the transistor can be suppressed.
  • the insulating layer 4021 is formed as a planarization insulating layer.
  • the insulating layer 4021 can be formed using a heat-resistant organic material such as polyimide, an acrylic resin, benzocyclobutene, polyamide, or an epoxy resin. Other than such organic materials, it is also possible to use a low-dielectric constant material (a low-k material), a siloxane-based resin, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), or the like. Note that the insulating layer 4021 may be formed by stacking a plurality of insulating films formed using any of these materials.
  • the pixel electrode layer 4030 and the counter electrode layer 4031 can be formed using a light-transmitting conductive material such as indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (hereinafter, referred to as ITO), indium zinc oxide, or indium tin oxide to which silicon oxide is added.
  • a light-transmitting conductive material such as indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (hereinafter, referred to as ITO), indium zinc oxide, or indium tin oxide to which silicon oxide is added.
  • connection terminal electrode 4015 is formed using the same conductive layer as the pixel electrode layer 4030 included in the liquid crystal element 4013.
  • a terminal electrode 4016 is formed using the same conductive layer as source and drain electrode layers of the transistors 4010 and 4011. ⁇
  • connection terminal electrode 4015 is electrically connected to a terminal included in the FPC 4018 via an anisotropic conductive film 4019.
  • a color filter is provided in each pixel.
  • a polarization plate and a diffusing plate are provided on the outer sides of the first substrate 4001 and the second substrate 4006.
  • a light source of a backlight is formed using a cold-cathode tube or an LED.
  • a twisted nematic (TN) mode for the liquid crystal display module, a twisted nematic (TN) mode, an in-plane-switching (IPS) mode, a fringe field switching (FFS) mode, a multi-domain vertical alignment (MVA) mode, a patterned vertical alignment (PVA) mode, an axially symmetric aligned micro-cell (ASM) mode, an optically compensated birefringence (OCB) mode, a ferroelectric liquid crystal (FLC) mode, an antiferroelectric liquid crystal (AFLC) mode, or the like can be employed.
  • TN twisted nematic
  • IPS in-plane-switching
  • FFS fringe field switching
  • MVA multi-domain vertical alignment
  • PVA patterned vertical alignment
  • ASM axially symmetric aligned micro-cell
  • OCB optically compensated birefringence
  • FLC ferroelectric liquid crystal
  • AFLC antiferroelectric liquid crystal
  • a liquid crystal display device can be manufactured.
  • the transistors including an oxide semiconductor layer to which hydrogen is supplied which are described in the above embodiments, have high field-effect mobility.
  • This embodiment can be implemented in combination with any of the structures described in the other embodiments as appropriate.
  • FIG. 9 A is a plan view of a panel in which a transistor including an oxide semiconductor layer to which hydrogen is supplied and a light-emitting element are sealed between a first substrate and a second substrate with a sealant.
  • FIG. 9B corresponds to a cross-sectional view of FIG. 9A along line H-I.
  • a sealant 4505 is provided to surround a pixel portion 4502, a signal line driver circuit 4503a, a signal line driver circuit 4503b, a scan line driver circuit 4504a, and a scan line driver circuit 4504b, which are provided over a first substrate 4501.
  • a second substrate 4506 is provided over the pixel portion 4502, the signal line driver circuits 4503a and 4503b, and the scan line driver circuits 4504a and 4504b. Accordingly, the pixel portion 4502, the signal line driver circuits 4503a and 4503b, and the scan line driver circuits 4504a and 4504b are sealed together with a filler 4507, by the first substrate 4501, the sealant 4505, and the second substrate 4506. It is preferable that a display device be thus packaged (sealed) with a protective film or a cover material with high air-tightness and little degasification so that the display device is not exposed to the outside air.
  • the pixel portion 4502, the signal line driver circuits 4503a and 4503b, and the scan line driver circuits 4504a and 4504b formed over the first substrate 4501 include a plurality of transistors, and a transistor 4510 included in the pixel portion 4502 and a transistor 4509 included in the signal line driver circuit 4503a are illustrated as an example in FIG. 9B.
  • the transistors 4509 and 4510 any of the transistors having high mobility which include an oxide semiconductor layer to which hydrogen is supplied can be used.
  • the transistors 4509 and 4510 are n-channel transistors.
  • a conductive layer 4540 is provided over an insulating layer 4544 at a position overlapping with a channel formation region of an oxide semiconductor layer of the transistor 4509 for the driver circuit.
  • the conductive layer 4540 may have a potential which is the same as or different from that of a gate electrode layer of the transistor 4509, and can function as a second gate electrode layer.
  • the potential of the conductive layer 4540 may be GND, 0 V or in a floating state.
  • an insulating layer 4541 is formed as a protective insulating layer so as to be in contact with a semiconductor layer including a channel formation region.
  • the insulating layer 4541 may be formed using a material and a method similar to those of the insulating layer 112 described in the above embodiment.
  • a protective insulating layer 4514 is formed over the insulating layer 4541.
  • the insulating layer 4514 may be formed using a material and a method similar to those of the insulating layer 116 described in the above embodiment.
  • a silicon nitride layer is formed as the protective insulating layer 4514 by a PCVD method.
  • the insulating layer 4544 may be formed using a material and a method similar to those of the insulating layer 4021 described in Embodiment 6.
  • an acrylic resin is used for the planarization insulating layer 4544.
  • reference numeral 4511 denotes a light-emitting element.
  • a first electrode layer 4517 which is a pixel electrode included in the light-emitting element 4511 is electrically connected to a source or drain electrode layer of the transistor 4510.
  • the structure of the light-emitting element 4511 is, but not limited to, the stacked structure of the first electrode layer 4517, an electroluminescent layer 4512, and the second electrode layer 4513.
  • the structure of the light-emitting element 4511 can be changed as appropriate depending on the direction in which light is extracted from the light-emitting element 4511, or the like.
  • a partition 4520 is formed using an organic resin layer, an inorganic insulating layer, or organic polysiloxane. It is particularly preferable that the partition 4520 be formed of a photosensitive material to have an opening over the first electrode layer 4517 so that a sidewall of the opening is formed as an inclined surface with continuous curvature.
  • the electroluminescent layer 4512 may be formed using a single layer or a plurality of layers stacked.
  • a protective layer may be formed over the second electrode layer 4513 and the partition 4520 in order to prevent oxygen, hydrogen, moisture, carbon dioxide, or the like from entering the light-emitting element 4511.
  • a silicon nitride layer, a silicon nitride oxide layer, a DLC layer, or the like can be formed.
  • signal line driver circuits 4503a and 4503b the scan line driver circuits 4504a and 4504b, or the pixel portion 4502 from an FPC 4518a and an FPC 4518b.
  • a connection terminal electrode 4515 is formed from the same conductive film as the first electrode layer 4517 included in the light-emitting element 4511, and a terminal electrode 4516 is formed from the same conductive film as the source and drain electrode layers included in the transistors 4509 and 4510.
  • connection terminal electrode 4515 is electrically connected to a terminal included in the FPC 4518a through an anisotropic conductive layer 4519.
  • the substrate located in the direction in which light is extracted from the 59 10 070254
  • light-emitting element 4511 needs to have a light-transmitting property.
  • a light-transmitting material such as a glass plate, a plastic plate, a polyester film, or an acrylic resin film is used.
  • an ultraviolet curable resin or a thermosetting resin can be used, in addition to an inert gas such as nitrogen or argon.
  • an inert gas such as nitrogen or argon.
  • PVC polyvinyl chloride
  • acrylic resin polyimide
  • epoxy resin polyimide
  • epoxy resin polyimide
  • silicone resin polyimide
  • EVA ethylene vinyl acetate
  • nitrogen may be used as the filler.
  • an optical film such as a polarizing plate, a circularly polarizing plate (including an elliptically polarizing plate), a retardation plate (a quarter-wave plate or a half-wave plate), or a color filter may be provided as appropriate on a light-emitting surface of the light-emitting element.
  • the polarizing plate or the circularly polarizing plate may be provided with an anti-reflection film. For example, anti-glare treatment by which reflected light can be diffused by projections and depressions on the surface so as to reduce the glare can be performed.
  • a light-emitting display device (display panel) can be manufactured.
  • the transistors including an oxide semiconductor layer to which hydrogen is supplied which are described in the above embodiments, have high field-effect mobility.
  • a light-emitting display device is manufactured using such a transistor as in this embodiment, a light-emitting display device having excellent display characteristics is realized.
  • This embodiment can be implemented in combination with any of the structures described in the other embodiments as appropriate.
  • the thin film transistors whose on-state current and field-effect mobility are increased by supply of hydrogen can be used for electronic paper in which electronic ink is driven by an element electrically connected to a switching element.
  • the electronic paper is also referred to as an electrophoretic display device (an electrophoretic display) and is advantageous in that it has the same level of readability as plain paper, it has lower power consumption than other display devices, and it can be made thin and lightweight.
  • Electrophoretic displays can have various modes.
  • electrophoretic displays contain a plurality of microcapsules dispersed in a solvent or a solute, and each microcapsule contains first particles which are positively charged and second particles which are negatively charged.
  • first particles and second particles which are negatively charged.
  • the particles in the microcapsules move in opposite directions to each other and only the color of the particles gathering on one side is displayed.
  • the first particles and the second particles each contain pigment and do not move without an electric field.
  • the first particles and the second particles have different colors (which may be colorless).
  • An electrophoretic display is thus a display that utilizes a so-called dielectrophoretic effect by which a substance having a high dielectric constant moves to a high-electric field region.
  • a solution in which the above microcapsules are dispersed in a solvent is referred to as electronic ink.
  • This electronic ink can be printed on a surface of glass, plastic, cloth, paper, or the like. Furthermore, by using a color filter or particles that have a pigment, color display can also be achieved.
  • an active matrix display device when a plurality of the microcapsules are arranged as appropriate over an active matrix substrate so as to be interposed between two electrodes, an active matrix display device can be completed, and thus display can be performed by application of an electric field to the microcapsules.
  • an active matrix substrate an active matrix substrate using any of the transistors including an oxide semiconductor layer to which hydrogen is supplied, which are described in the above embodiments, can be used, for example.
  • first particles and the second particles in the microcapsules can be formed using a single material selected from a conductive material, an insulating material, a semiconductor material, a magnetic material, a liquid crystal material, a ferroelectric material, an electroluminescent material, an electrochromic material, and a magnetophoretic material, or formed using a composite material of such a material.
  • FIG. 10 illustrates active matrix electronic paper as an example of the semiconductor device.
  • a transistor 581 used in the semiconductor device can be manufactured in a manner similar to that of the transistors of the above embodiments and is a transistor having high mobility which include an oxide semiconductor layer to which hydrogen is supplied.
  • an insulating layer 584 is an insulating film containing hydrogen and is provided for supplying hydrogen to an oxide semiconductor material.
  • the electronic paper in FIG. 10 is an example of a display device using a twisting ball display system.
  • the twisting ball display system refers to a method in which spherical particles each colored in black and white are arranged between a first electrode layer and a second electrode layer which are electrode layers used for a display element, and a potential difference is generated between the first electrode layer and the second electrode layer to control orientation of the spherical particles, so that display is performed.
  • the transistor 581 formed over a substrate 580 is a transistor having a bottom gate structure and is covered with an insulating layer 583 which is in contact with the semiconductor layer.
  • a source or drain electrode layer of the transistor 581 is in contact with a first electrode layer 587 at an opening formed in the insulating layer 583, the insulating layer 584, and an insulating layer 585, whereby the transistor 581 is electrically connected to the first electrode layer 587.
  • Spherical particles exist between the first electrode layer 587 and a second electrode layer 588 provided on a substrate 596.
  • the spherical particles each include a black region 590a, a white region 590b, and a cavity 594 filled with liquid around the regions.
  • a space around the cavity 594 is filled with a filler 595 such as a resin (see FIG. 10).
  • the first electrode layer 587 and the second electrode layer 588 correspond to a pixel electrode and a common electrode, respectively.
  • the second electrode layer 588 is electrically connected to a common potential line provided over the same insulating substrate as the transistor 581. With the use of a common connection portion, the second electrode layer 588 and the common potential line can be electrically connected to each other through conductive particles provided between the pair of substrates.
  • an electrophoretic element may be used instead of the twisting ball.
  • the white microparticles and black microparticles move to opposite sides from each other, so that white or black can be displayed.
  • a display element using this principle is an electrophoretic display element and is generally called electronic paper.
  • the electrophoretic display element has a higher reflectivity than a liquid crystal display element and thus, an auxiliary light is unnecessary, power consumption is low, and a display portion can be recognized in a dim place.
  • an image which has been displayed once can be maintained. Accordingly, a displayed image can be stored even if a semiconductor device having a display function (which may be referred to as a display device simply or a semiconductor device provided with a display device) is distanced from a radio wave source.
  • a so-called electronic paper is manufactured using a transistor described in any of the above embodiments.
  • the transistor has high field-effect mobility, and when electronic paper is manufactured using the transistor, the electronic paper can have excellent display characteristics.
  • This embodiment can be implemented in combination with any of the structures described in the other embodiments as appropriate.
  • a semiconductor device disclosed in this specification can be applied to a variety of electronic devices (including game machines).
  • electronic devices are a television device (also referred to as a television or a television receiver), a monitor of a computer or the like, a camera such as a digital camera or a digital video camera, a digital photo frame, a mobile phone (also referred to as a cellular phone or a mobile phone device), a portable game console, a portable information terminal, an audio playback device, a large-sized game machine such as a pinball machine, and the like.
  • FIG. HA illustrates a laptop personal computer manufactured by mounting at least a display device as a component, which includes a main body 3001, a housing 3002, a display portion 3003, a keyboard 3004, and the like.
  • the laptop personal computer includes the liquid crystal display device described in Embodiment 6.
  • FIG. 11B is a portable information terminal (PDA) manufactured by mounting at least a display device as a component.
  • a main body 3021 is provided with a display portion 3023, an external interface 3025, an operation button 3024, and the like.
  • the portable information terminal includes the light-emitting display device described in Embodiment 7.
  • FIG. llC illustrates an e-book reader on which the electronic paper described in
  • Embodiment 8 is mounted as a component.
  • FIG. 11C illustrates an e-book reader 2700.
  • the e-book reader 2700 includes two housings, a housing 2701 and a housing 2703.
  • the housing 2701 and the housing 2703 are combined with a hinge 2711 so that the e-book reader 2700 can be opened and closed with the hinge 2711 as an axis.
  • the e-book reader 2700 can operate like a paper book.
  • a display portion 2705 and a display portion 2707 are incorporated in the housing 2701 and the housing 2703, respectively.
  • the display portion 2705 and the display portion 2707 may display one image or different images.
  • the right display portion can display text
  • the left display portion can display graphics.
  • FIG. llC illustrates an example in which the housing 2701 is provided with an operation portion and the like.
  • the housing 2701 is provided with a power switch 2721, an operation key 2723, a speaker 2725, and the like.
  • the operation key 2723 pages can be turned.
  • a keyboard, a pointing device, or the like may also be provided on the surface of the housing, on which the display portion is provided.
  • an external connection terminal (an earphone terminal, a USB terminal, a terminal that can be connected to various cables such as an AC adapter and a USB cable, or the like), a recording medium insertion portion, and the like may be provided on the back surface or the side surface of the housing.
  • the e-book reader 2700 may have a function of an electronic dictionary.
  • the e-book reader 2700 may have a configuration capable of wirelessly transmitting and receiving data. Through wireless communication, desired book data or the like can be purchased and downloaded from an electronic book server. [0255]
  • FIG. 11D is a mobile phone manufactured by mounting at least a display device as a component, which includes two housings, a housing 2800 and a housing 2801.
  • the housing 2801 includes a display panel 2802, a speaker 2803, a microphone 2804, a pointing device 2806, a camera lens 2807, an external connection terminal 2808, and the like.
  • the housing 2800 is provided with a solar cell 2810 for charging the portable information terminal, an external memory slot 2811, and the like. Further, an antenna is incorporated in the housing 2801.
  • the display panel 2802 is provided with a touch panel.
  • a plurality of operation keys 2805 which is displayed as images is illustrated by dashed lines in FIG. 11D.
  • the display panel 2802 is also mounted with a booster circuit for raising a voltage output from the solar cell 2810 to a voltage needed for each circuit.
  • the display direction can be appropriately changed depending on a usage pattern.
  • the display device is provided with the camera lens 2807 on the same surface as the display panel 2802, and thus it can be used as a video phone.
  • the speaker 2803 and the microphone 2804 can be used for videophone calls, recording and playing sound, and the like as well as voice calls.
  • the housings 2800 and 2801 in a state where they are developed as illustrated in FIG. 11 D can shift by sliding so that one is lapped over the other; therefore, the size of the mobile phone can be reduced, which makes the mobile phone suitable for being carried.
  • the external connection terminal 2808 can be connected to an AC adapter and various types of cables such as a USB cable, and charging and data communication with a personal computer are possible. Moreover, a large amount of data can be stored by inserting a storage medium into the external memory slot 2811 and can be moved.
  • an infrared communication function may be provided.
  • FIG. HE is a digital camera manufactured by mounting at least a display 66 JP2010/070254
  • a device as a component, which includes a main body 3051, a display portion (A) 3057, an eyepiece 3053, operation switches 3054, a display portion (B) 3055, a battery 3056, and the like.
  • FIG. 12 illustrates a television device 9600.
  • a display portion 9603 is incorporated in a housing 9601.
  • the display portion 9603 can display images.
  • the housing 9601 is supported by a stand 9605.
  • the television device 9600 can be operated with an operation switch of the housing 9601 or a separate remote controller 9610. Channels and volume can be switched and controlled with an operation key 9609 of the remote controller 9610 so that an image displayed on the display portion 9603 can be controlled. Furthermore, the remote controller 9610 may be provided with a display portion 9607 for displaying data output from the remote controller 9610.
  • the television device 9600 is provided with a receiver, a modem, and the like. With the use of the receiver, general television broadcasting can be received. Moreover, when the display device is connected to a communication network with or without wires via the modem, one-way (from a sender to a receiver) or two-way (between a sender and a receiver or between receivers) information communication can be performed.
  • a plurality of transistors described in any of the above embodiments is provided as pixel switching elements in the display portion 9603, and a transistor having high mobility described in any of the above embodiments is disposed in a driver circuit which is formed over the same insulating substrate as the pixel portion 9603.
  • Embodiments 1 to 8 can be freely combined with any one of Embodiments 1 to 8.
  • This application is based on Japanese Patent Application serial no. 2009-279002 filed with Japan Patent Office on December 8, 2009, the entire contents of which are hereby incorporated by reference.

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