WO2009145298A1 - 発光装置、面光源、液晶表示装置および発光装置の製造方法 - Google Patents
発光装置、面光源、液晶表示装置および発光装置の製造方法 Download PDFInfo
- Publication number
- WO2009145298A1 WO2009145298A1 PCT/JP2009/059863 JP2009059863W WO2009145298A1 WO 2009145298 A1 WO2009145298 A1 WO 2009145298A1 JP 2009059863 W JP2009059863 W JP 2009059863W WO 2009145298 A1 WO2009145298 A1 WO 2009145298A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- emitting device
- light emitting
- transparent resin
- phosphor layer
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 58
- 238000000034 method Methods 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 229920005989 resin Polymers 0.000 claims abstract description 141
- 239000011347 resin Substances 0.000 claims abstract description 141
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000002245 particle Substances 0.000 claims abstract description 39
- 230000002093 peripheral effect Effects 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 abstract description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 128
- 230000004048 modification Effects 0.000 description 62
- 238000012986 modification Methods 0.000 description 62
- 238000005286 illumination Methods 0.000 description 36
- 238000000605 extraction Methods 0.000 description 25
- 238000009792 diffusion process Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 238000007789 sealing Methods 0.000 description 7
- 238000000748 compression moulding Methods 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920001973 fluoroelastomer Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229920000544 Gore-Tex Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- 150000003746 yttrium Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
- G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0068—Arrangements of plural sources, e.g. multi-colour light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0033—Means for improving the coupling-out of light from the light guide
- G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
- G02B6/0055—Reflecting element, sheet or layer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0073—Light emitting diode [LED]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133609—Direct backlight including means for improving the color mixing, e.g. white
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
Definitions
- the present invention generally relates to a light emitting device, a surface light source, a liquid crystal display device and a method for manufacturing the light emitting device, and relates to an edge light or direct type surface light source used as a backlight for a display device such as a liquid crystal television.
- the present invention relates to a resin-sealed light emitting device used for a surface light source, a liquid crystal display device using the surface light source, and a method for manufacturing the light emitting device.
- Patent Document 1 As a conventional light emitting device, for example, in Japanese Patent Application Laid-Open No. 2006-351809, light emitted from a light emitting element chip is extracted without being attenuated by a light extraction increasing member, and light emission for the purpose of increasing light use efficiency An apparatus is disclosed (Patent Document 1).
- the light-emitting device disclosed in Patent Document 1 is optically coupled to a light-emitting element chip composed of a light-emitting diode and an emission surface of the light-emitting element chip, increases the amount of light extracted from the light-emitting element chip, and uses refraction.
- a light extraction increasing member for controlling light distribution is disclosed.
- Patent Document 2 describes an LED element having an LED chip, a drop that covers the LED chip and includes a mixture of fluorescent compound particles and epoxy, and a transparent optical dome that covers the drop as a prior art. ing.
- an edge light type surface illumination device used as a backlight for a display device is similarly required to be thin and light.
- a light emitting device using a sealing resin is required.
- LED light emitting diode
- LED elements used in light emitting devices are becoming larger, and specifically, LED elements having a size of about 0.3 mm or more are also used. I'm starting. Similarly, direct-type surface illumination devices are also required to be thinner and lighter.
- the system which arranges LED element of red (R), green (G), and blue (B) side by side, and creates a new desired color, A method of creating a desired color by exciting a phosphor with short-wavelength light emitted from an LED element and generating secondary light is being used.
- the size of the sealing resin is reduced while the size of the LED element is increased.
- both sizes are approaching the same order.
- the conventional method of handling the LED element as a point light source cannot extract sufficient light from the sealing resin.
- the area of the light emitter to be considered is expanded from only the LED element to a wide area including the LED element and the phosphor. Even in this case, the conventional method cannot extract sufficient light from the sealing resin.
- an object of the present invention is to solve the above-described problems, and to provide a light emitting device, a surface light source, a liquid crystal display device, and a method for manufacturing the light emitting device that improve light extraction efficiency.
- the light-emitting device of the present invention includes a substrate having a main surface, a semiconductor light-emitting element that is provided on the main surface and emits primary light, and fluorescent particles that absorb secondary light and emit secondary light.
- An inner shell and an outer shell having a refractive index n and covering the inner shell are provided.
- the outer portion has an outer peripheral surface that forms a boundary with the atmosphere. In a cut surface in which at least a part of the outer peripheral surface appears as an arc having a radius R, when the minimum circumference including the entire inner portion and concentric with the outer peripheral surface has a radius r, R> r ⁇ The relationship of n is satisfied.
- the inner portion includes a plurality of semiconductor light emitting elements.
- the light-emitting device of the present invention further includes scattering particles that are dispersed in the inner portion and scatter primary light and secondary light.
- the outer portion and the inner portion are preferably formed in concentric hemispheres having a radius R and a radius r (r ⁇ R / n), respectively.
- the outer portion and the inner portion are formed in concentric semicircular shapes having a radius R and a radius r (r ⁇ R / n), respectively, and the outer peripheral surface of the outer portion is a semi-circular shape.
- a cylindrical shape is preferred.
- the outer peripheral surface and the center of the circumference are disposed on the main surface or the substrate.
- the inner portion has a shape of any one of a rectangular parallelepiped, a cylinder, and a polygonal column.
- n ⁇ n ′ it is preferable that the relationship of n ⁇ n ′ is satisfied when the inner portion has a refractive index n ′.
- the inner portion is preferably formed from a transparent resin or glass.
- the outer portion is preferably formed from a transparent resin or glass.
- the light-emitting device of the present invention preferably further includes a damming member provided at a boundary portion between the inner shell portion on the main surface and the outer shell portion.
- the surface light source of the present invention is a linear light source having a plurality of light emitting devices as described above, a light emitting surface extending in a planar shape, a line extending in the thickness direction from the periphery of the light emitting surface, A light guide plate having an incident end face on which light emitted from the light source is incident. In response to the incidence of light on the incident end face, light is emitted from the emission surface.
- the surface light source of this invention is equipped with the above-mentioned several light-emitting device arrange
- the liquid crystal display device of the present invention includes the above-described surface light source and a liquid crystal display panel that is disposed to face the surface light source and is irradiated from the back surface by the surface light source.
- the manufacturing method of the light emitting device of the present invention includes a step of die bonding a semiconductor light emitting element on a substrate, a step of providing a damming member so as to surround the periphery of the semiconductor light emitting element on the substrate, and an inner side of the damming member, A step of forming a resin containing fluorescent particles, a step of coating the semiconductor light emitting element with a resin containing fluorescent particles, and a step of coating the resin containing fluorescent particles with a transparent resin.
- the cross section of the blocking member is a slope on the side facing the semiconductor light emitting element.
- the method for manufacturing a light emitting device of the present invention includes a step of removing the blocking member between a step of coating the semiconductor light emitting element with a resin containing fluorescent particles and a step of coating the resin containing fluorescent particles with a transparent resin. It is preferable to further provide.
- the present invention it is possible to provide a light emitting device, a surface light source, a liquid crystal display device, and a method for manufacturing the light emitting device that can improve the light extraction efficiency.
- the light emitting device includes a plurality of LED elements, an increase in the size of the sealing resin can be suppressed.
- FIG. 21A and FIG. 21B It is a top view which shows the modification of the light-emitting device in FIG. 21A and FIG. 21B. It is a top view which shows the light-emitting device in Embodiment 7 of this invention. It is sectional drawing which shows the light-emitting device in Embodiment 7 of this invention. It is another sectional drawing which shows the light-emitting device in Embodiment 7 of this invention. It is sectional drawing which shows the process of the manufacturing method of the light-emitting device in Embodiment 7 of this invention. It is sectional drawing which shows the process of the modification of the manufacturing method of the light-emitting device in Embodiment 7 of this invention. It is a top view which shows the modification of the light-emitting device in FIG.
- FIG. 23A, FIG. 23B, and FIG. 23C It is sectional drawing which shows the modification of the light-emitting device in FIG. 23A, FIG. 23B, and FIG. 23C.
- FIG. 24 is another cross-sectional view showing a modification of the light emitting device in FIGS. 23A, 23B, and 23C.
- Embodiment 9 of this invention It is sectional drawing which shows the light-emitting device in Embodiment 9 of this invention.
- FIG. 27A and FIG. 27B It is a top view which shows the light-emitting device in Embodiment 10 of this invention.
- FIG. 1 is a cross-sectional view showing a light-emitting device according to Embodiment 1 of the present invention.
- FIG. 2 is a plan view showing the light emitting device in FIG.
- FIG. 1 shows a cross section along the line II in FIG.
- the light emitting device 10 in the present embodiment is configured to include a substrate 21, an LED element 26, a phosphor layer 31, and a transparent resin layer 41.
- the substrate 21 has a main surface 22 extending in a planar shape.
- An LED element 26 is provided on the main surface 22.
- the LED element 26 is physically and electrically connected to the substrate 21 using, for example, a die bond paste and a wire.
- the LED element 26 emits light in any one of red (R), green (G), and blue (B).
- R red
- G green
- B blue
- the LED element 26 has a size of 0.3 mm or more.
- the LED element 26 is made of GaN, sapphire, GaAs, AlGaInP, or the like according to the emission color.
- the phosphor layer 31, which is an inner portion, is provided on the main surface 22 so as to surround the LED element 26.
- the transparent resin layer 41 that is an outer portion is provided so as to further cover the phosphor layer 31.
- the phosphor layer 31 is provided on the main surface 22 so as to completely fill the space between the LED element 26 and the transparent resin layer 41.
- An air layer 46 exists around the transparent resin layer 41. That is, around the LED element 26, the phosphor layer 31, the transparent resin layer 41, and the air layer 46 are arranged in order from the inside.
- the phosphor layer 31 and the transparent resin layer 41 are provided as a sealing resin for the LED element 26.
- the phosphor layer 31 and the transparent resin layer 41 have a radius r and a radius R, respectively, and are formed in concentric hemispheres with the origin O as the center.
- the origin O is disposed on the main surface 22.
- the LED element 26 is disposed at a position overlapping the origin O.
- the transparent resin layer 41 has an outer peripheral surface 42 having a radius R.
- the outer peripheral surface 42 is formed in a spherical shape with the origin O as the center.
- the outer peripheral surface 42 is a surface that forms a boundary between the transparent resin layer 41 and the atmospheric layer 46.
- the phosphor layer 31 has an outer peripheral surface 32 having a radius r.
- the outer peripheral surface 32 is formed in a spherical shape with the origin O as the center.
- the outer peripheral surface 32 is a surface that forms a boundary between the phosphor layer 31 and the transparent resin layer 41.
- the circumference 101 has a radius r.
- the transparent resin layer 41 and the phosphor layer 31 are formed in concentric hemispheres, the circumference 101 and the outer peripheral surface 32 overlap.
- the phosphor layer 31 is formed of a resin that transmits light emitted from the LED element 26.
- the phosphor layer 31 is made of, for example, a transparent epoxy resin or silicone resin.
- the phosphor layer 31 is provided with a plurality of fluorescent particles 36 dispersed therein. The light emitted from the LED element 26 is wavelength-converted by the fluorescent particles 36, and as a result, light having a wavelength different from the light emitted from the LED element 26 is emitted from the phosphor layer 31.
- BOSE Ba, O, Sr, Si, Eu
- SOSE Sr, Ba, Si, O, Eu
- YAG Ce activated yttrium, aluminum, garnet
- ⁇ sialon (Ca), Si, Al, O, N, Eu)
- ⁇ sialon Si, Al, O, N, Eu
- Si, Al, O, N, Eu or the like
- the LED element 26 a blue light emitting element having an emission peak wavelength of 450 nm is used.
- an ultraviolet (near ultraviolet) LED element having an emission peak wavelength of 390 nm to 420 nm, further luminous efficiency can be obtained. Improvements can be made.
- the case where the light emitting device 10 includes the phosphor layer 31 will be described.
- a light diffusion layer may be provided instead of the phosphor layer 31.
- the light diffusion layer for example, TiO 2 , SiO 2 , alumina, aluminum nitride, or mullite powder (particle size is, for example, 10 nm to 10 ⁇ m) that scatters light emitted from the LED element 26 is used as a component. Scattered particles are provided in a dispersed manner. In order to suppress color unevenness, fluorescent particles and scattering particles may be mixed and used.
- the transparent resin layer 41 is formed from a resin that transmits light emitted from the LED element 26 and the phosphor layer 31.
- the transparent resin layer 41 is formed from, for example, a transparent epoxy resin or silicone resin.
- the transparent resin layer 41 has a refractive index n.
- the phosphor layer 31 has a refractive index n ′ larger than the refractive index n. In this case, the efficiency of extracting light from the LED element 26 can be improved by disposing the phosphor layer 31 having a larger refractive index around the LED element 26.
- the light in which the primary light emitted from the LED element 26 and the secondary light emitted from the phosphor layer 31 are mixed is transmitted through the transparent resin layer 41 to the atmosphere layer 46. It is taken out. At this time, by appropriately combining the emission color of the LED element 26 and the emission color of the phosphor layer 31, the color of light extracted from the light emitting device 10 can be freely selected.
- the shape of the phosphor layer 31 and the material and shape of the transparent resin layer 41 are determined so that the relationship of R> r ⁇ n is established. With such a configuration, light emitted inside the circumference 101 can be efficiently extracted into the atmospheric layer 46. The reason will be described below.
- FIG. 3 is a diagram schematically showing the light emitting device in FIG. 1 on coordinates with the origin O as the center.
- the resin surface A is plotted at a position on 42.
- An angle formed by a line segment connecting the origin O and the light emitting point L and a line segment connecting the light emitting point L and the resin surface A is defined as ⁇ .
- FIG. 4 is a graph showing the relationship between the radius of the outer peripheral surface of the transparent resin layer and the light extraction efficiency.
- a simulation was performed in order to verify how the above relational expression of R> r ⁇ n affects the light extraction efficiency to the atmospheric layer 46.
- the relationship between R and light extraction efficiency was determined.
- the light extraction efficiency increased as the radius R of the outer peripheral surface 42 increased.
- the rate of increase in extraction efficiency was relatively large in the range of R ⁇ 1.27 mm affected by total reflection, and was relatively small in the range of R> 1.27 mm not affected by total reflection. Further, the value of the extraction efficiency was almost saturated in the vicinity of 114 to 115. From the above results, by optimizing the shape of the phosphor layer 31 and the material and shape of the transparent resin layer 41 in accordance with the relational expression of R> r ⁇ n, the light extraction efficiency can be improved up to about 14 to 15%. Was confirmed.
- a light-emitting device 10 according to Embodiment 1 of the present invention includes a substrate 21 having a main surface 22, a phosphor layer 31 as an inner portion that is provided on the main surface 22 and encloses a light-emitting base point, and a refractive index. n, and a transparent resin layer 41 as an outer portion covering the phosphor layer 31.
- the transparent resin layer 41 has an outer peripheral surface 42 that forms a boundary with the atmosphere. In a cut surface where at least a part of the outer peripheral surface 42 appears as an arc having a radius R, when the smallest circumference 101 including all of the phosphor layer 31 and concentric with the outer peripheral surface 42 has a radius r, The relationship R> r ⁇ n is satisfied.
- the light-emitting device 10 is surrounded by the phosphor layer 31 and provided in a dispersed manner in the LED element 26 as a semiconductor light-emitting element that emits primary light and the phosphor layer 31, and absorbs a part of the primary light. It further includes fluorescent particles 36 that emit next light and are arranged at the base point.
- the phosphor layer 31 and the transparent resin layer 41 formed of a transparent resin are provided as the inner and outer portions, but the present invention is not limited thereto, and is formed of, for example, glass that transmits light. An optically transparent glass layer may be provided.
- the light emitting device configured as described above, total reflection occurring at the boundary between the transparent resin layer 41 and the atmospheric layer 46 and into the sealing resin accompanying this total reflection.
- This can eliminate the light confinement phenomenon. That is, the light emitted from the LED element 26 and the phosphor layer 31 and traveling to the transparent resin layer 41 can be extracted to the atmospheric layer 46 without being reflected at the boundary between the transparent resin layer 41 and the atmospheric layer 46. Thereby, the light extraction efficiency can be improved.
- FIG. 5 is a cross-sectional view showing a first modification of the light emitting device in FIG.
- phosphor layer 31 that is an inner portion has a rectangular parallelepiped shape.
- the shape of the phosphor layer 31 is not limited to a spherical shape, and may take any shape such as a rectangular parallelepiped, a polygonal column, or a cylinder.
- FIG. 6 is a cross-sectional view showing a second modification of the light emitting device in FIG.
- phosphor layer 31 that is an inner portion is provided on main surface 22 so as to form a hollow layer 51 between LED element 26 and phosphor layer 31. It has been. That is, around the LED element 26, the hollow layer 51, the phosphor layer 31, the transparent resin layer 41, and the atmospheric layer 46 are disposed in order from the inside. In addition, it replaces with the hollow layer 51 and transparent resin which forms the transparent resin layer 41 may be arrange
- FIG. 7 is a cross-sectional view showing a third modification of the light emitting device in FIG.
- phosphor layer 31 that is an inner portion includes inner phosphor layer 31m and outer phosphor layer 31n.
- an inner phosphor layer 31m, an outer phosphor layer 31n, a transparent resin layer 41, and an air layer 46 are arranged in order from the inside.
- the types of fluorescent particles 36 dispersed in each phosphor layer are different between the inner phosphor layer 31m and the outer phosphor layer 31n. For example, the fluorescent particles 36 dispersed in the inner phosphor layer 31m emit red light, and the fluorescent particles 36 dispersed in the outer phosphor layer 31n emit green light.
- FIG. 8 is a cross-sectional view showing a fourth modification of the light emitting device in FIG.
- the origin O that is the center of the outer peripheral surface 42 and the circumference 101 is arranged at a position shifted from the main surface 22.
- the origin O is shifted to the opposite side of the phosphor layer 31 and the transparent resin layer 41 with respect to the main surface 22.
- the phosphor layer 31 and the transparent resin layer 41 do not have a perfect hemispherical shape.
- FIG. 9 is a cross-sectional view showing a fifth modification of the light emitting device in FIG.
- the origin O that is the center of the outer peripheral surface 42 and the circumference 101 is arranged at a position shifted from the main surface 22.
- the origin O is shifted to the opposite side of the substrate 21 with respect to the main surface 22.
- Transparent resin layer 41 has a shape in which a peripheral portion intersecting main surface 22 is missing. For example, assuming an edge light type liquid crystal backlight in which the light emitting device is arranged on the side surface of the light guide plate, the transparent resin layer 41 protrudes from the light guide plate when the size needs to be smaller than the thickness of the light guide plate. A part of the transparent resin layer 41 may be cut.
- the outer peripheral surface 42 includes an arc portion 42 p that appears as an arc shape with a radius R, and a linear portion 42 q that extends linearly from the arc portion 42 p and intersects the main surface 22. Composed. As shown in this modification, the outer peripheral surface 42 does not have to be formed into a perfect spherical shape.
- the height of the straight portion 42q is kept as low as possible.
- the light extraction efficiency to the atmospheric layer 46 can be improved by providing the phosphor layer 31 and the transparent resin layer 41 so as to satisfy the relationship of R> r ⁇ n.
- FIG. 10 is a cross-sectional view showing a sixth modification of the light emitting device in FIG.
- the phosphor layer 31 is not provided on the main surface 22, and the LED element 26 is directly covered with the transparent resin layer 41.
- the minimum circumference 101 including the entire LED element 26 has a radius r
- the relationship of R> r ⁇ n is established. That is, the light-emitting device in this modification has a substrate 21 having a main surface 22, an LED element 26 that is provided on the main surface 22 and encloses a base point that emits light, and a refractive index n. And a transparent resin layer 41 as an outer portion covering the LED element 26.
- the transparent resin layer 41 is formed including the protrusions 43.
- the protruding portion 43 protrudes from the outer peripheral surface 42 and extends linearly on the main surface 22.
- the protruding portion 43 is a portion generated by a resin injection path when the transparent resin layer 41 is injection-molded using a mold.
- the light extraction efficiency to the atmospheric layer 46 can be improved by providing the LED element 26 and the transparent resin layer 41 so as to satisfy the relationship of R> r ⁇ n.
- FIG. 11A and FIG. 11B are diagrams showing a light-emitting device according to Embodiment 3 of the present invention.
- 11B is a plan view
- FIG. 11A is a cross-sectional view along the line AA in FIG. 11B.
- a plurality of LED elements 26 are arranged in a straight line on main surface 22 at intervals.
- Each of the LED elements 26 is covered with a phosphor layer 31 and a transparent resin layer 41 in the same form as the light emitting device 10 in FIG. With such a configuration, the light emitting device 110 constitutes a line light source.
- a combination of (blue LED element 26B emitting blue light + red phosphor layer 31R emitting red light) and (blue LED element 26B emitting blue light + green phosphor layer 31G emitting green light) are combined. are alternately arranged.
- FIG. 12 is a cross-sectional view showing a surface illumination device and a liquid crystal display device using the light emitting device in FIGS. 11A and 11B.
- the surface illumination device 210 is an edge light type surface light source used as a backlight of the liquid crystal display device 310.
- the surface illumination device 210 includes a light emitting device 110, a light guide plate 61, a reflection plate 72, and a light diffusion sheet 73.
- the light guide plate 61 has an emission surface 63 that extends in a planar shape, and an incident end surface 62 that is disposed on the periphery of the emission surface 63 and extends in the thickness direction of the light guide plate 61.
- the light guide plate 61 is positioned with respect to the light emitting device 110 so that the incident end face 62 and the main surface 22 of the substrate 21 face each other.
- the light diffusion sheet 73 is disposed so as to overlap the emission surface 63.
- the reflection plate 72 is disposed on the opposite side of the light diffusion sheet 73 with respect to the light guide plate 61.
- the liquid crystal display device 310 has a liquid crystal display panel 74 in addition to the surface illumination device 210.
- the liquid crystal display panel 74 is disposed on the opposite side of the light guide plate 61 with respect to the light diffusion sheet 73. In other words, the light diffusion sheet 73 and the liquid crystal display panel 74 are sequentially arranged on the emission surface 63. If the display surface side of the liquid crystal display panel 74 is the front surface, the surface illumination device 210 is disposed on the back surface of the liquid crystal display panel 74.
- the light emitted from the light emitting device 110 enters the light guide plate 61 through the incident end face 62.
- the diameter 2R of the transparent resin layer 41 is smaller than the thickness T of the light guide plate 61 (R ⁇ T / 2), the light emitted from the light emitting device 110 is efficiently incident into the light guide plate 61. be able to.
- the light incident on the light guide plate 61 is emitted toward the liquid crystal display panel 74 through the emission surface 63 while being reflected by the reflection plate 72.
- FIGS. 13A and 13B are views showing a first modification of the light emitting device in FIGS. 11A and 11B.
- FIG. 13B is a plan view
- FIG. 13A is a side view seen from the direction indicated by arrow A in FIG. 13B.
- a plurality of LED elements 26 are arranged in a straight line on main surface 22 at intervals.
- a partition wall 81 is erected on the main surface 22, and a plurality of LED elements 26 arranged in a straight line are provided on both sides of the partition wall 81.
- Each of the LED elements 26 is covered with a phosphor layer 31 and a transparent resin layer 41 in the same form as the light emitting device 10 in FIG.
- a combination of (blue LED element 26B that emits blue light + green phosphor layer 31G that emits green light) is disposed on one side of the both sides across the partition 81, and the other of both sides across the partition 81 is disposed.
- the combination of (blue LED element 26 ⁇ / b> B emitting blue light + red phosphor layer 31 ⁇ / b> R emitting red light) is arranged on the side.
- FIG. 14 is a cross-sectional view showing a surface illumination device and a liquid crystal display device using the light emitting device in FIGS. 13A and 13B.
- surface lighting device 220 and liquid crystal display device 320 using light emitting device 120 shown in FIGS. 13A and 13B have the same structure as surface lighting device 210 and liquid crystal display device 310 in FIG. Have.
- green light emitted from one side on both sides of the partition wall 81 is disposed on the other side of both sides of the partition wall 81 (blue light emitting in blue). It is possible to suppress absorption by a light emitting device that is a combination of the LED element 26B + red phosphor layer 31R that emits red light.
- FIGS. 11A and 11B are diagrams showing a second modification of the light emitting device in FIGS. 11A and 11B.
- 15B is a plan view
- FIG. 15A is a cross-sectional view along the line AA in FIG. 15B.
- a plurality of LED elements 26 are arranged in a straight line on main surface 22 at intervals.
- the red LED element 26R that is directly covered with the transparent resin layer 41 and emits red light
- the green phosphor layer 31G and the transparent resin layer that emit green light in the same form as the light emitting device 10 in FIG.
- the blue LED elements 26 ⁇ / b> B covered with 41 and emitting blue light are alternately arranged.
- 13A and 13B may be replaced with a red LED element 26R directly covered by the transparent resin layer 41 (blue LED element 26B emitting blue light + red phosphor layer 31R emitting red light). Good.
- the surface illumination device and the liquid crystal display device using the light emitting device 130 in this modification have the same structure as the surface illumination device 210 and the liquid crystal display device 310 in FIG.
- the effects described in the first embodiment can be obtained similarly.
- the surface illumination device 60 having high luminance can be realized, and the brightness of display on the liquid crystal display panel 74 can be improved.
- the phosphor layer 31 and the transparent resin layer 41 are provided in the same form as the light emitting device 10 in FIG. 1 .
- the phosphor layer 31 and the transparent resin layer 41 are implemented in the same manner. It may be provided in the same form as the various modifications in Form 2.
- FIG. 16 is a plan view showing a light-emitting device according to Embodiment 4 of the present invention.
- 17 is a cross-sectional view showing a surface illumination device and a liquid crystal display device using the light emitting device in FIG.
- a plurality of LED elements 26 are arranged side by side in a plane at intervals.
- Each of the plurality of LED elements 26 is covered with a transparent resin layer 41 in the same form as the light emitting device shown in FIG.
- a red LED element 26R that emits red light
- a green LED element 26G that emits green light
- a blue LED element 26B that emits blue light are arranged side by side.
- the light emitting device 140 constitutes a surface light source.
- surface illumination device 230 in the present embodiment is a direct type surface light source used as a backlight of liquid crystal display device 330.
- the surface illumination device 230 includes a light emitting device 140 and a light diffusion sheet 73.
- the light diffusion sheet 73 is positioned with respect to the light emitting device 140 so as to face the main surface 22 of the substrate 21.
- the liquid crystal display device 330 includes a liquid crystal display panel 74 in addition to the surface illumination device 230.
- the liquid crystal display panel 74 is disposed on the opposite side of the light emitting device 140 with respect to the light diffusion sheet 73.
- the effects described in the third embodiment can be obtained similarly.
- FIG. 18 is a perspective view showing a light-emitting device according to Embodiment 5 of the present invention.
- phosphor layer 31 and transparent resin layer 41 have a semi-cylindrical shape obtained by extending a semicircular cross section in the axial direction of central axis 106. .
- a cut surface similar to the shape shown in FIG. 1 is obtained.
- the phosphor layer 31 and the transparent resin layer 41 have R> The relationship r ⁇ n is established.
- the phosphor layer 31 and the transparent resin layer 41 are not limited to a spherical shape, and can take any shape including the cross-sectional shape shown in FIG.
- FIG. 19A and 19B are diagrams showing a light-emitting device using the structure of the light-emitting device in FIG. 19B is a plan view, and FIG. 19A is a cross-sectional view along the line AA in FIG. 19B.
- a plurality of blue LED elements 26B that emit blue light are arranged in a straight line on main surface 22 at intervals.
- Each of the blue LED elements 26 ⁇ / b> B is covered with red and green phosphor layers 31 ⁇ / b> R and G that emit light in red and green, and a transparent resin layer 41.
- the axial direction of the central axis 106 and the arrangement direction of the plurality of LED elements 26 are orthogonal to each other.
- the LED elements 26 may be configured to be individually mounted on each substrate 21 to form individual light emitting devices, and the light emitting devices may be mounted on a housing substrate or a mounting substrate.
- FIGS. 19A and 19B are diagrams showing a modification of the light emitting device in FIGS. 19A and 19B.
- 20B is a plan view
- FIG. 20A is a cross-sectional view along the line AA in FIG. 20B.
- a plurality of blue LED elements 26B that emit blue light are arranged linearly on main surface 22 at intervals from each other. Yes.
- the plurality of blue LED elements 26 ⁇ / b> B are covered with the common red and green phosphor layers 31 ⁇ / b> R and G and the transparent resin layer 41.
- the cross section of the light emitting device 180 in the direction perpendicular to the arrangement direction of the plurality of blue LED elements 26B has the same shape as the cross section shown in Modification 3 (FIG. 7) in the second embodiment, and the red and green phosphor layers
- the dimensional relationship between 31R and G and the transparent resin layer 41 is also the same as that in the third modification (FIG. 7) in the second embodiment.
- the axial direction of the central axis 106 matches the arrangement direction of the plurality of LED elements 26.
- a surface illumination device and a liquid crystal display device using the light emitting device 180 in this modification have the same structure as the surface illumination device 210 and the liquid crystal display device 310 in FIG.
- FIG. 21A and 21B are diagrams showing a light emitting device according to Embodiment 6 of the present invention.
- FIG. 21B is a plan view
- FIG. 21A is a cross-sectional view along the line AA in FIG. 21B.
- a plurality of blue LED elements 26B that emit blue light are arranged in a straight line at intervals from each other on main surface 22. ing.
- Each of the blue LED elements 26 ⁇ / b> B is covered with red and green phosphor layers 31 ⁇ / b> R and G that emit light in red and green, and a transparent resin layer 41.
- the transparent resin layer 41 and the phosphor layer 31 are formed including a protrusion 91 and a protrusion 92, respectively.
- the protruding portion 92 protrudes from the outer peripheral surface 32 and extends linearly on the main surface 22.
- the protruding portion 91 protrudes from the outer peripheral surface 42 and extends linearly so as to cover the protruding portion 92 on the main surface 22.
- the protrusion 91 extends between the adjacent transparent resin layers 41, and the protrusion 92 extends between the adjacent phosphor layers 31.
- the protrusions 91 and the protrusions 92 are portions generated by the resin injection path when the transparent resin layer 41 and the phosphor layer 31 are injection molded using a mold.
- 22A and 22B are diagrams showing a modification of the light emitting device in FIGS. 21A and 21B.
- 22B is a plan view
- FIG. 22A is a cross-sectional view taken along the line AA in FIG. 22B.
- the transparent resin layer 41 is formed including the protrusions 91.
- the plurality of phosphor layers 31 are provided on the main surface 22 independently of each other. Since the phosphor layer 31 can have any shape as long as it fits within the circumference 101 in FIG. 1, the demand for the accuracy of the shape is low compared to the transparent resin layer 41. Therefore, the phosphor layer 31 may be formed by a method such as coating using a dispenser as long as the orientation characteristics, brightness, and chromaticity between the plurality of LED elements 26 are within a predetermined variation range.
- a new light emitting device, surface lighting device, and liquid crystal display device may be configured by appropriately combining the structures of the light emitting device, the surface lighting device, and the liquid crystal display device described in the first to sixth embodiments.
- FIG. 23A, FIG. 23B, and FIG. 23C are diagrams showing a light-emitting device according to Embodiment 7 of the present invention.
- 23A is a plan view
- FIG. 23B is a cross-sectional view taken along the line BB ′ in FIG. 23A
- FIG. 23C is a cross-sectional view taken along the line CC ′ in FIG. 23A.
- light-emitting device 510 in the present embodiment includes substrate 21, four LED elements 26 that are die-bonded to the central portion of main surface 22 of substrate 21, and these A phosphor layer 31 that covers the LED element 26 and a transparent resin layer 41 that covers the phosphor layer 31 in a hemispherical dome shape.
- the transparent resin layer 41 covers the main surface 22 with a circle having a radius R (1.4 mm).
- the phosphor layer 31 is formed in a hemisphere having a radius R / n concentric with a circle having a radius R (indicated by a dashed-dotted phantom line in the drawing).
- the light emitting device 510 is characterized in that, in the main surface 22, only the vicinity of the LED element 26 is covered with the phosphor layer 31, and a portion far from the LED element 26 is not covered with the phosphor layer 31.
- the phosphor layer 31 is excited by the primary light emitted from the LED element 26 and emits secondary light.
- the emission of the secondary light is mainly due to the component due to the phosphor layer 31 in the vicinity of the LED element 26, and the component due to the portion far from the LED element 26 is small.
- the phosphor layer 31 covers the main surface 22 at a portion farther than the LED element 26, the reflection effect on the main surface 22 is inhibited and a part of the emitted light is absorbed to reduce the light extraction efficiency. There are things to do. For this reason, it is preferable that the phosphor layer 31 covers only the vicinity of the LED element 26 on the main surface 22 and does not cover the distant portion. Thereby, the reflection effect with which main surface 22 is provided can be used effectively, and the extraction efficiency of light can be improved.
- FIG. 24A is a cross-sectional view showing a step in the manufacturing method for the light emitting device according to Embodiment 7 of the present invention.
- FIG. 24B is a cross-sectional view showing a process of a modification of the method for manufacturing the light-emitting device in Embodiment 7 of the present invention.
- LED element 26 is die-bonded at a predetermined position on main surface 22 of substrate 21.
- the electrode of the LED element 26 and the electrode (not shown) of the substrate 21 are wire-bonded by a wire 27 and electrically connected.
- An electrode for wire bonding is provided on the main surface 22, and an electrode for connecting to an external circuit is provided on the back surface of the substrate 21, and both are electrically connected by a through hole (not shown).
- the light emitting device is configured to be able to supply power to the LED element 26.
- the material of the substrate 21 preferably has a high reflection effect on the main surface 22.
- a ceramic substrate is used as the base material 21.
- a dam sheet 401 as a damming member is attached to the surface of the main surface 22 on the side where the LED elements 26 are die-bonded.
- the dam sheet 401 is formed with a through hole that can accommodate the LED element 26.
- the dam sheet 401 is a member attached to the substrate 21 so that the LED element 26 is immersed in the through hole.
- the resin 33 containing fluorescent particles described later is injected into the through hole, the resin 33 flows out to the main surface 22. It is a member that dams up so as not to spread.
- the resin 33 containing fluorescent particles is injected so as to fill the through hole. At this time, the resin 33 is prevented from flowing out of the through hole due to surface tension generated between the resin 33 and the dam sheet 401, and may cause meniscus. Even in this case, it is preferable that the relationship of R> r ⁇ n is satisfied.
- the resin 33 containing fluorescent particles is obtained by dispersing the fluorescent particles 36 in a transparent resin such as a silicone resin.
- a transparent resin such as a silicone resin.
- the dam sheet 401 for example, a sheet in which an adhesive material is applied to one surface of a resin sheet such as Teflon (registered trademark) or fluororubber can be used. Fluoro rubber is preferable as a material used for the dam sheet 401 because it has high elasticity and the dam sheet 401 can be easily removed.
- the adhesive is preferably one that can be easily attached to the main surface 22 and that no residue of the adhesive remains on the main surface 22 when the dam sheet 401 is removed.
- the dam sheet 401 is removed to form the phosphor layer 31.
- a method for removing the dam sheet 401 there is a method in which one end of the dam sheet 401 is gripped by a jig and peeled off. At this time, the resin 33 containing fluorescent particles protruding from the through hole can be removed simultaneously with the dam sheet 401.
- the phosphor layer 31 is covered with a transparent resin in a hemispherical dome shape.
- a transparent resin in a hemispherical dome shape.
- compression molding can be used.
- a female die 78a having a hemispherical dome-like cavity 78c is used, and the phosphor layer 31 is covered with a transparent resin layer 41 having a hemispherical dome-like shape.
- the transparent resin 40 is injected into the cavity 78c to fill it.
- the transparent resin 40 is cured by setting the substrate 21 on the female die 78a and clamping it with the base die 78b and holding it at a temperature of 150 ° C. for about 1 minute. At this time, a state in which the phosphor layer 31 is immersed in the cavity 78c is obtained.
- the substrate 21 is removed from the female die 78a.
- the transparent resin 40 communicates between adjacent cavities, so that the thin transparent resin layer 41 extends to the peripheral edge of the hemispherical dome, and the main surface 22 is formed. May be covered.
- the substrate 21 is divided into individual light emitting devices.
- Device 510 was formed.
- Four LED elements 26 are die-bonded at the center of the main surface 22.
- the four LED elements 26 are connected in series by wire bonding, and are further covered with a phosphor layer 31.
- the center of the hemispheric dome is arranged at the center of the arrangement of the LED elements 26 and at a height of 100 ⁇ m from the main surface 22.
- the bottom surface of the hemispheric dome has a diameter of 2.8 mm, and the height from the main surface 22 to the top of the hemispheric dome is 1.5 mm.
- a transparent resin layer 41 having a thickness of about 50 ⁇ m extends around the hemispherical dome, and the transparent resin layer 41 entirely covers the main surface 22.
- the LED element 26 has dimensions of 240 ⁇ m ⁇ 600 ⁇ m and a thickness of 100 ⁇ m.
- the four LED elements 26 are positioned at approximately equal intervals in two rows and two columns when the main surface 22 is viewed in a plan view within the central region of the main surface 22.
- the phosphor layer 31 has a size of 0.9 mm ⁇ 1.6 mm and a thickness of 0.38 mm.
- the covering area of the main surface 22 by the phosphor layer 31 is approximately 1.4 mm 2 .
- the bottom surface of the hemispherical dome has a diameter of 2.8 mm, its bottom area is 6.2 mm 2 . Therefore, the ratio of the covering area of the main surface 22 by the phosphor layer 31 to the bottom area of the hemispheric dome is about 23%.
- the covering area can be further reduced. It has been.
- the ratio of the covering area of the main surface 22 by the phosphor layer 31 to the bottom area of the hemispheric dome is Should not be limited to a specific value.
- the radius r of the phosphor layer 31 and the radius R of the transparent resin layer 41 are equal, that is, the coverage area of the main surface 22 by the phosphor layer 31 is Based on the value when the ratio to the bottom area of the hemispherical dome is 100%, the light extraction efficiency increases as the radius R of the outer peripheral surface 42 of the hemispherical dome increases, and R> r ⁇ n, It is almost saturated. Therefore, the effect of improving the light extraction efficiency can be achieved even when the ratio of the area covered by the phosphor layer 31 to the bottom surface of the hemispheric dome is less than 100%, for example, 95%, preferably 80% or less. And is considered to saturate near (1 / n) 2 .
- the total luminous flux of the light emitting device in which the phosphor layer 31 was formed by compression molding and the light emitting device 510 in the present embodiment were compared.
- the main surface has a thickness of about 100 to 200 ⁇ m due to the phosphor layer extending from the position where the LED element 26 is die-bonded due to the manufacturing method. Is partially or entirely covered, but the rest of the configuration is the same as that of the light-emitting device 510.
- the light emitting device 510 in the present embodiment was confirmed to increase the total luminous flux at a rate of 10 to 20%, compared with the light emitting device in which the phosphor layer 31 was formed by compression molding.
- the light emitting device configured such that only the vicinity of the LED element 26 on the main surface 22 is covered with the phosphor layer 31 and the portion farther than the LED element 26 is not covered with the phosphor layer 31.
- the light extraction efficiency can be improved by effectively utilizing the reflection effect of the light.
- the dimension of the fluorescent substance layer 31 is demarcated by the dimension of a through-hole, the precision of a dimension is high and it is advantageous when suppressing the dispersion
- 25A, 25B, and 25C are diagrams showing a modification of the light emitting device in FIGS. 23A, 23B, and 23C.
- 25A is a plan view
- FIG. 25B is a cross-sectional view taken along the line BB ′ in FIG. 25A
- FIG. 25C is a cross-sectional view taken along the line CC ′ in FIG. 25A.
- the light emitting device 520 in the present modification in the light emitting device 520 in the present modification, four LED elements 26 are arranged at the center of the main surface 22.
- the four LED elements 26 are die-bonded at approximately equal intervals in a row so that the longitudinal directions of the LED elements face each other.
- the light emitting device 520 has a configuration equivalent to that of the light emitting device 510 except for the above configuration. According to such a configuration, the LED elements 26 and the wires 27 are arranged in one direction, and die bonding and wire bonding are easy.
- the phosphor layer 31 protrudes from the hemisphere having a radius R / n concentric with the circle having the radius R (indicated by a dashed-dotted phantom line in the drawing) at the end in the longitudinal direction.
- the LED element 26 is die-bonded at a position within a radius R / n that satisfies the condition of R> r ⁇ n, and the phosphor layer 31 that contributes to light emission is mainly disposed in the vicinity of the LED element 26. It is a part to be done.
- the position r of the light emitting point from the center of the hemispheric dome can be regarded as substantially satisfying the condition of R> r ⁇ n, and it is considered that the effect of improving the light extraction efficiency can be obtained. Therefore, even if the position r of a part of the phosphor layer 31 from the center of the hemispheric dome does not satisfy the condition of R> r ⁇ n, or even when it protrudes beyond the hemispheric dome, at least the LED element 26 If some of them are die-bonded at a position r that satisfies the condition of R> r ⁇ n, it is considered that an effect of improving the light extraction efficiency can be obtained.
- a resin 33 containing fluorescent particles is potted on the LED element 26 that is die-bonded to the main surface 22 to cover the thixotropy.
- a resin 33 containing fluorescent particles is potted on the LED element 26 that is die-bonded to the main surface 22 to cover the thixotropy.
- potting can be performed in several steps. That is, the phosphor layer 31 is formed by repeating potting and temporary curing and laminating the coating. According to this method, the size of the phosphor layer 31 can be easily increased or decreased.
- the light emitting device in the present embodiment combines the action of the dam sheet damming up the resin containing fluorescent particles and the reflection action of the dam sheet itself.
- a dome is formed above the dam sheet while being attached to the substrate. Since the other points are the same as those of the light-emitting device described in Embodiment 7, different points will be described.
- FIG. 26 is a cross-sectional view showing the steps of the method for manufacturing the light emitting device in the eighth embodiment of the present invention.
- a method for manufacturing light emitting device 530 in the present embodiment will be described below.
- a dam sheet 401 having a high reflectance is attached to the main surface 22 of the substrate 21 by the same method as described above, and then the LED element 26 die-bonded to the main surface 22 is covered with the phosphor layer 31.
- the resin 33 containing fluorescent particles is injected so as to fill the through hole, it is important that the resin 33 does not flow out to the surface of the dam sheet 401 and spread.
- the phosphor layer 31 is covered with a transparent resin layer 41 in a hemispherical dome shape.
- a method for forming the hemispherical dome an injection mold can be used.
- the female die 78a is provided with a cavity 78c formed in a hemispherical dome shape and a gate 78d communicating with the cavity 78c.
- the substrate 21 is set on the female die 78a and clamped by the base die 78b. Thereafter, the transparent resin 40 is injected from the gate 78d into the cavity 78c, thereby covering the phosphor layer 31 in a hemispherical dome shape.
- the transparent resin 40 is injected, the transparent resin 40 is cured in the cavity 78c at 120 ° C. for 3 minutes, and the substrate 21 is taken out from the female mold 78a. After-cure is performed at 150 ° C. for 2 hours, and then the substrate 21 is separated into individual light emitting devices by the same method as described above.
- a fiber sheet such as GORE-TEX (registered trademark) coated with a resin and further coated with an adhesive on one surface can be used.
- the total luminous flux of the light emitting device 530 in this embodiment and the light emitting device for comparison was compared.
- the light emitting device 530 has a configuration in which the dam sheet 401 is attached to the ceramic substrate 21, whereas the light emitting device for comparison does not include the dam sheet 401.
- both have the same configuration.
- the total luminous flux increased by 1.8 to 2.7% compared to the light emitting device for comparison.
- the highly reflective dam sheet 401 is attached to the main surface 22, it is possible to use a resin substrate or a substrate material with low reflectivity, and there is a degree of freedom in selecting a substrate material. high. Moreover, the process of removing the dam sheet 401 is unnecessary, and the manufacturing process is simple.
- a dam ring is used instead of the dam sheet 401.
- the dam ring is a member for blocking the resin containing fluorescent particles so that the resin does not flow out to the main surface of the substrate and spread.
- the light-emitting device in the present embodiment is the same as the light-emitting device described in Embodiment 7 except that the light-emitting device includes a dam ring, and different points will be described.
- FIGS. 27A and 27B are diagrams showing a light-emitting device according to Embodiment 9 of the present invention.
- 27A is a plan view
- FIG. 27B is a cross-sectional view along the line BB ′ in FIG. 27A.
- a method for manufacturing light emitting device 540 in the present embodiment will be described below.
- a dam ring 402 is attached on the main surface 22 so as to surround the periphery of the LED element 26, and the phosphor layer 31 is formed inside the dam ring 402. Yes.
- the material of the dam ring 402 the same as that of the transparent resin layer 41, the distortion of the irradiation shape due to the difference in refractive index is suppressed, and the difference in expansion coefficient between the dam ring 402 and the transparent resin layer 41 is eliminated. It is preferable in that it can be performed.
- FIG. 28 is a cross-sectional view showing a modification of the light emitting device in FIGS. 27A and 27B.
- the cross section of the dam ring 402 surrounds the LED element 26 with the dam ring 402 attached to the main surface 22.
- the opposite wall surface has a slope.
- the light emitting device 550 is characterized in that the inclined surface 402a functions as a reflecting wall. Thereby, the directivity toward the front can be given to the emitted light of the light emitting device 550.
- the material of the dam ring 402 is preferably a material having a high reflectance of the inclined surface 402a, and a metal or a resin on which a reflective film is formed can be used.
- FIG. 29 is a plan view showing a light-emitting device according to Embodiment 10 of the present invention.
- 30 is a cross-sectional view showing a surface illumination device and a liquid crystal display device using the light emitting device in FIG.
- a plurality of light emitting devices 560 having the same form as light emitting device 520 shown in FIGS. 25A to 25C are arranged in a two-dimensional matrix on housing substrate 20.
- the surface light source 570 is mounted.
- the LED element 26 in the light emitting device 560 is a blue LED element
- the phosphor layer 31 is a yellow phosphor alone or a resin layer containing a green phosphor and a red phosphor, and constitutes a light emitting device that emits white light. .
- the number of LED elements 26 mounted is not limited to four, but may be other numbers such as three.
- the arrangement of the light emitting devices 560 on the housing substrate is not limited to this arrangement form, and may be an arrangement form such as a hexagonal shape or a triangular shape.
- the surface illumination device 240 in this embodiment is used for the liquid crystal display device 340 as a direct type backlight.
- the surface illumination device 240 includes a surface light source 570 including a plurality of light emitting devices 560 and a light diffusion sheet 73.
- the light diffusion sheet 73 is positioned with respect to the surface light source 570 so as to face the main surface 22 of the substrate 21 of each light emitting device 560.
- the liquid crystal display device 340 includes a liquid crystal display panel 74 in addition to the surface illumination device 240.
- the liquid crystal display panel 74 is disposed on the opposite side of the surface light source 570 with respect to the light diffusion sheet 73.
- an optical lens member may be installed instead of the light diffusion sheet 73.
- an optical sheet having a light condensing function may be inserted between the light diffusion sheet 73 and the liquid crystal display panel 74.
- the effects described in the third embodiment can be obtained similarly.
- the present invention is mainly used for a backlight for a display device such as a liquid crystal television.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
- Liquid Crystal (AREA)
Abstract
Description
本発明の液晶表示装置は、前述の面光源と、面光源と対向して配置され、背面から面光源によって照射される液晶表示パネルとを備える。
図1は、この発明の実施の形態1における発光装置を示す断面図である。図2は、図1中の発光装置を示す平面図である。図1中には、図2中のI-I線上に沿った断面が示されている。
(R/sinθ)=(r/sinα)
上式を整理すると、
sinα=r・sinθ/R
となり、この式から、θ=π/2のとき、αは最大値(αmax)をとる。
sinα≦sin(αmax)=r/R (式1)
入射角αと、透明樹脂層41および大気層46の境界における全反射の臨界角θcとの間には、スネルの法則から下記の(式2)が成立する。
sinθc=1/n (式2)
今、発光装置10において常にα<θc、すなわち、
αmax<θc (式3)
の関係が成立するならば、発光点Lから発せられた光を全て大気層46に取り出すことができる。
r/R=sin(αmax)<sinθc=1/n
結果、R>r・nの関係が成立するように蛍光体層31および透明樹脂層41を設けることによって、円周101の内側から外側に発せられた光を全て大気層46に取り出すことができる。
本実施の形態では、実施の形態1において説明した図1中の発光装置10の各種変形例について説明を行なう。以下、重複する構造については説明を繰り返さず、発光装置10と比較した場合に異なる構造を中心に説明を行なう。
本実施の形態では、図1中の発光装置10の構造を利用した発光装置と、この発光装置を用いた面照明装置および液晶表示装置とについて説明を行なう。以下、重複する構造については説明を繰り返さず、発光装置10と比較した場合に異なる構造を中心に説明を行なう。
本実施の形態では、図10中の発光装置の構造を利用した発光装置と、この発光装置を用いた面照明装置および液晶表示装置とについて説明を行なう。以下、重複する構造については説明を繰り返さず、図10中の発光装置と比較した場合に異なる構造を中心に説明を行なう。
本実施の形態では、図1中の発光装置10の別の形態について説明を行なう。以下、重複する構造については説明を繰り返さない。
本実施の形態では、図1中の発光装置10の構造を利用した発光装置について説明を行なう。以下、重複する構造については説明を繰り返さず、図1中の発光装置10と比較した場合に異なる構造を中心に説明を行なう。
図23A、図23Bおよび図23Cは、この発明の実施の形態7における発光装置を示す図である。図23Aは平面図であり、図23Bは、図23A中のB-B´線上に沿った断面図であり、図23Cは、図23A中のC-C´線上に沿った断面図である。
本実施の形態における発光装置は、ダムシートが蛍光粒子入りの樹脂を堰き止める作用と、ダムシート自体の反射作用とを兼ね備えるものであって、反射率の高いダムシートを用いるとともに、ダムシートを基板に張り付けたままダムシートの上方にドームが形成されることを特徴とする。それ以外の点は、実施の形態7に説明した発光装置と同等であるので、異なる点について説明する。
本実施の形態における発光装置においては、ダムシート401に替え、ダムリングが用いられる。ダムリングは、ダムシートと同じく、蛍光粒子入りの樹脂が基板の主表面に流出して拡がらないように堰き止めるための部材である。本実施の形態における発光装置は、ダムリングを備える以外は、実施の形態7に説明した発光装置と同等であるため、異なる点について説明する。
本実施の形態では、図25A~図25C中の発光装置520の構造を利用した発光装置と、この発光装置を用いた面照明装置および液晶表示装置とについて説明を行なう。以下、重複する構造については説明を繰り返さず、図25A~図25C中の発光装置520と比較した場合に異なる構造を中心に説明を行なう。
Claims (18)
- 主表面を有する基板と、
前記主表面上に設けられ、1次光を発する半導体発光素子および1次光の一部を吸収して2次光を発する蛍光粒子を内包する内郭部と、
屈折率nを有し、前記内郭部を覆う外郭部とを備え、
前記外郭部は、大気との境界をなす外周面を有し、
前記外周面の少なくとも一部が半径Rの円弧状となって表れる切断面において、前記内郭部の全てを含み、前記外周面と同心となる最小の円周が半径rを有する場合に、R>r・nの関係が満たされる、発光装置。 - 前記内郭部は、複数の前記半導体発光素子を内包する、請求の範囲1に記載の発光装置。
- 前記内郭部に分散して設けられ、1次光および2次光を散乱させる散乱粒子をさらに備える、請求の範囲1に記載の発光装置。
- 前記外郭部および前記内郭部は、それぞれ半径Rおよび半径r(r<R/n)を有する同心の半球状に形成される、請求の範囲1に記載の発光装置。
- 前記外郭部および前記内郭部は、前記切断面においてそれぞれ半径Rおよび半径r(r<R/n)を有する同心の半円形状に形成され、
前記外郭部の外周面が、半円柱形状である、請求の範囲1に記載の発光装置。 - 前記外周面および前記円周の中心が前記主表面または前記基板内に配置される、請求の範囲1に記載の発光装置。
- 前記内郭部は、直方体、円柱および多角柱のいずれかの形状を有する、請求の範囲1に記載の発光装置。
- 前記内郭部が屈折率n’を有する場合に、n<n’の関係が満たされる、請求の範囲1に記載の発光装置。
- 前記内郭部は、透明樹脂またはガラスから形成される、請求の範囲1に記載の発光装置。
- 前記外郭部は、透明樹脂またはガラスから形成される、請求の範囲1に記載の発光装置。
- 前記主表面上の前記内郭部と前記外郭部との境界部に設けられる堰き止め部材をさらに備える、請求の範囲1に記載の発光装置。
- 直線状に配置された、請求の範囲1に記載の複数の発光装置を有する線光源と、
平面状に延在する出射面と、前記出射面の周縁から板厚方向に延在し、前記線光源から発せられた光が入射される入射端面とを有する導光板とを備え、
前記入射端面への光の入射を受けて、前記出射面から光が出射される、面光源。 - 平面状に配置された、請求の範囲1に記載の複数の発光装置を備える、面光源。
- 請求の範囲12に記載の面光源と、
前記面光源と対向して配置され、背面から前記面光源によって照射される液晶表示パネルとを備える、液晶表示装置。 - 請求の範囲13に記載の面光源と、
前記面光源と対向して配置され、背面から前記面光源によって照射される液晶表示パネルとを備える、液晶表示装置。 - 基板上に半導体発光素子をダイボンディングする工程と、
前記基板上において前記半導体発光素子の周囲を取り囲むように堰き止め部材を設ける工程と、
前記堰き止め部材の内側に、蛍光粒子入りの樹脂を形成するとともに、前記半導体発光素子を蛍光粒子入りの前記樹脂により被覆する工程と、
蛍光粒子入りの前記樹脂を透明樹脂により被覆する工程とを備える、発光装置の製造方法。 - 前記堰き止め部材の断面が、前記半導体発光素子と対向する側が斜面である、請求の範囲16に記載の発光装置の製造方法。
- 前記半導体発光素子を蛍光粒子入りの樹脂により被覆する工程と、前記蛍光粒子入り樹脂を透明樹脂により被覆する工程との間に、前記堰き止め部材を除去する工程をさらに備える、請求の範囲16に記載の発光装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/995,364 US9634203B2 (en) | 2008-05-30 | 2009-05-29 | Light emitting device, surface light source, liquid crystal display device, and method for manufacturing light emitting device |
BRPI0913195A BRPI0913195A2 (pt) | 2008-05-30 | 2009-05-29 | dispostivo emissor de luz, fonte de luz de superfície, dispositivo de vídeo de cristal líquido e método para a fabricação de dispositivo emissor de luz |
JP2010514550A JP5512515B2 (ja) | 2008-05-30 | 2009-05-29 | 発光装置、面光源および液晶表示装置 |
CN2009801203335A CN102047452B (zh) | 2008-05-30 | 2009-05-29 | 发光装置、面光源、液晶显示装置和制造发光装置的方法 |
EP09754806.9A EP2293354B1 (en) | 2008-05-30 | 2009-05-29 | Light emitting device, planar light source, liquid crystal display device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-142697 | 2008-05-30 | ||
JP2008142697 | 2008-05-30 | ||
JP2009011192 | 2009-01-21 | ||
JP2009-011192 | 2009-01-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009145298A1 true WO2009145298A1 (ja) | 2009-12-03 |
Family
ID=41377167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/059863 WO2009145298A1 (ja) | 2008-05-30 | 2009-05-29 | 発光装置、面光源、液晶表示装置および発光装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9634203B2 (ja) |
EP (1) | EP2293354B1 (ja) |
JP (2) | JP5512515B2 (ja) |
CN (2) | CN102047452B (ja) |
BR (1) | BRPI0913195A2 (ja) |
WO (1) | WO2009145298A1 (ja) |
Cited By (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011134442A (ja) * | 2009-12-22 | 2011-07-07 | Toshiba Lighting & Technology Corp | 照明装置 |
JP2011181550A (ja) * | 2010-02-26 | 2011-09-15 | Konica Minolta Opto Inc | 発光装置及びその製造方法 |
US20110316027A1 (en) * | 2010-06-29 | 2011-12-29 | Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation | Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof |
US20110316017A1 (en) * | 2010-06-29 | 2011-12-29 | Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation | Wafer-type light emitting device having precisely coated wavelength-converting layer |
JP2012003887A (ja) * | 2010-06-15 | 2012-01-05 | Ccs Inc | 照明装置 |
WO2012001938A1 (ja) * | 2010-06-28 | 2012-01-05 | パナソニック株式会社 | 発光装置、バックライトユニット、液晶表示装置及び照明装置 |
JP2012015319A (ja) * | 2010-06-30 | 2012-01-19 | Sharp Corp | 発光素子パッケージおよびその製造方法、発光素子アレイ、および表示装置 |
US20120020085A1 (en) * | 2010-07-26 | 2012-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Device and Lighting Device |
CN102403438A (zh) * | 2010-09-07 | 2012-04-04 | 株式会社东芝 | 发光装置 |
JP2012074379A (ja) * | 2010-09-29 | 2012-04-12 | Samsung Electronics Co Ltd | 発光ダイオードパッケージを有するバックライトアセンブリ及びこれを有する表示装置 |
JP2012080083A (ja) * | 2010-09-06 | 2012-04-19 | Toshiba Corp | 発光装置 |
JP2012080084A (ja) * | 2010-09-06 | 2012-04-19 | Toshiba Corp | 発光装置 |
WO2012052432A3 (de) * | 2010-10-19 | 2012-07-05 | Osram Ag | Leuchtvorrichtung zur flächigen lichtabstrahlung |
EP2482346A1 (en) | 2011-01-28 | 2012-08-01 | Nichia Corporation | Light emitting device |
JP2012235157A (ja) * | 2010-09-06 | 2012-11-29 | Toshiba Corp | 発光装置 |
JP2013012694A (ja) * | 2011-06-03 | 2013-01-17 | Toshiba Lighting & Technology Corp | 発光装置及び照明装置 |
JP2013038221A (ja) * | 2011-08-08 | 2013-02-21 | Citizen Holdings Co Ltd | 発光デバイス |
JP2013038222A (ja) * | 2011-08-08 | 2013-02-21 | Citizen Holdings Co Ltd | 発光デバイス |
JP2013168626A (ja) * | 2012-02-15 | 2013-08-29 | Polar-Lights Opto Co Ltd | Cob型混光led電光盤 |
EP2381157A3 (en) * | 2010-04-20 | 2013-10-16 | Toshiba Lighting & Technology Corporation | Luminaire and light-emitting apparatus with light-emitting device |
JP2014060164A (ja) * | 2013-10-28 | 2014-04-03 | Sharp Corp | 発光装置、および照明装置 |
JP2014165320A (ja) * | 2013-02-25 | 2014-09-08 | Citizen Electronics Co Ltd | Led装置の製造方法 |
WO2014171394A1 (ja) * | 2013-04-15 | 2014-10-23 | シャープ株式会社 | 照明装置、照明機器および表示装置 |
US8921878B2 (en) | 2010-09-07 | 2014-12-30 | Kabushiki Kaisha Toshiba | Light emitting device |
US8933475B2 (en) | 2010-03-11 | 2015-01-13 | Kabushiki Kaisha Toshiba | Light emitting device |
JP2015506091A (ja) * | 2011-11-23 | 2015-02-26 | クォークスター・エルエルシー | 光を非対称に伝搬させる発光デバイス |
US9041042B2 (en) | 2010-09-20 | 2015-05-26 | Cree, Inc. | High density multi-chip LED devices |
JP2015111636A (ja) * | 2013-12-06 | 2015-06-18 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
US9108568B2 (en) | 2011-06-29 | 2015-08-18 | Sharp Kabushiki Kaisha | Light-projecting device, and vehicle headlamp including light-projecting device |
US9366399B2 (en) | 2011-03-03 | 2016-06-14 | Sharp Kabushiki Kaisha | Light emitting device, illumination device, and vehicle headlamp |
JP2016119454A (ja) * | 2014-12-17 | 2016-06-30 | 日東電工株式会社 | 蛍光体層被覆光半導体素子およびその製造方法 |
US9625121B2 (en) | 2010-12-01 | 2017-04-18 | Sharp Kabushiki Kaisha | Light emitting device, vehicle headlamp, illumination device, and vehicle |
JP2017103488A (ja) * | 2017-03-06 | 2017-06-08 | シャープ株式会社 | 発光装置 |
US10032969B2 (en) | 2014-12-26 | 2018-07-24 | Nichia Corporation | Light emitting device |
KR101915816B1 (ko) * | 2011-01-04 | 2018-11-06 | 엘지전자 주식회사 | 디스플레이 장치 |
US10746374B2 (en) | 2007-07-19 | 2020-08-18 | Quarkstar Llc | Nearly index-matched luminescent glass-phosphor composites for photonic applications |
US11313996B2 (en) | 2014-01-23 | 2022-04-26 | Lumileds Llc | Light emitting device with self-aligning preformed lens |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9373606B2 (en) * | 2010-08-30 | 2016-06-21 | Bridgelux, Inc. | Light-emitting device array with individual cells |
KR20130014256A (ko) * | 2011-07-29 | 2013-02-07 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 이용한 조명 시스템 |
US20130200414A1 (en) * | 2011-10-26 | 2013-08-08 | Epistar Corporation | Light-emitting diode device |
JP2013106550A (ja) * | 2011-11-18 | 2013-06-06 | Sharp Corp | 植物育成用照明装置 |
JP5699096B2 (ja) * | 2012-01-26 | 2015-04-08 | 東京応化工業株式会社 | 感光性組成物、パターンおよびパターンを有する表示装置 |
KR20130094482A (ko) * | 2012-02-16 | 2013-08-26 | 서울반도체 주식회사 | 렌즈를 갖는 발광 모듈 |
EP2639491A1 (en) * | 2012-03-12 | 2013-09-18 | Panasonic Corporation | Light Emitting Device, And Illumination Apparatus And Luminaire Using Same |
DE102012203791A1 (de) * | 2012-03-12 | 2013-09-12 | Zumtobel Lighting Gmbh | LED-Modul |
TWI441359B (zh) * | 2012-03-14 | 2014-06-11 | Univ Nat Central | 低空間色偏之led封裝結構 |
CN103367609B (zh) * | 2012-03-28 | 2016-05-18 | 中央大学 | 低空间色偏的led封装结构 |
CN103375708B (zh) * | 2012-04-26 | 2015-10-28 | 展晶科技(深圳)有限公司 | 发光二极管灯源装置 |
US9065024B2 (en) | 2012-05-01 | 2015-06-23 | Bridgelux, Inc. | LED lens design with more uniform color-over-angle emission |
US10448579B2 (en) * | 2012-07-11 | 2019-10-22 | Signify Holding B.V. | Lighting device capable of providing horticulture light and method of illuminating horticulture |
EP2895793B1 (en) | 2012-09-13 | 2020-11-04 | Quarkstar LLC | Light-emitting devices with reflective elements |
US20150327446A1 (en) * | 2013-02-15 | 2015-11-19 | Sharp Kabushiki Kaisha | Led light source for plant cultivation |
US9683710B2 (en) | 2013-03-07 | 2017-06-20 | Quarkstar Llc | Illumination device with multi-color light-emitting elements |
US9752757B2 (en) | 2013-03-07 | 2017-09-05 | Quarkstar Llc | Light-emitting device with light guide for two way illumination |
US10811576B2 (en) | 2013-03-15 | 2020-10-20 | Quarkstar Llc | Color tuning of light-emitting devices |
KR102108204B1 (ko) | 2013-08-26 | 2020-05-08 | 서울반도체 주식회사 | 면 조명용 렌즈 및 발광 모듈 |
CN103560202B (zh) * | 2013-11-08 | 2017-07-04 | 厦门厦荣达电子有限公司 | 一种白光led灯及其制备方法 |
CN104110614A (zh) * | 2014-07-08 | 2014-10-22 | 北京京东方视讯科技有限公司 | 一种白光led光源、背光模组及显示装置 |
JP2017527077A (ja) * | 2014-08-12 | 2017-09-14 | グロ アーベーGlo Ab | ナノワイヤled構造及びその製造方法 |
CN115291434A (zh) * | 2014-09-30 | 2022-11-04 | 富士胶片株式会社 | 背光单元、液晶显示装置及波长转换部件 |
KR20160054666A (ko) * | 2014-11-06 | 2016-05-17 | 삼성전자주식회사 | 광원 모듈 및 조명 장치 |
WO2016086173A1 (en) * | 2014-11-25 | 2016-06-02 | Quarkstar Llc | Lighting device having a 3d scattering element and optical extractor with convex output surface |
KR102252994B1 (ko) | 2014-12-18 | 2021-05-20 | 삼성전자주식회사 | 발광소자 패키지 및 발광소자 패키지용 파장 변환 필름 |
CN105810800A (zh) * | 2014-12-29 | 2016-07-27 | 宁波海奈特照明科技有限公司 | 一种led集成发光器件及其制作方法 |
DE102015206972A1 (de) * | 2015-04-17 | 2016-10-20 | Tridonic Jennersdorf Gmbh | LED-Modul zur Abgabe von Weißlicht |
JP2018194566A (ja) * | 2015-09-30 | 2018-12-06 | IP Labo株式会社 | 拡散レンズ及び発光装置 |
CN108352676A (zh) * | 2015-11-20 | 2018-07-31 | 夏普株式会社 | 人眼安全光源 |
US9985182B2 (en) * | 2015-12-25 | 2018-05-29 | Citizen Electronics Co., Ltd. | Light-emitting apparatus and color-matching apparatus |
CN105552067A (zh) * | 2016-02-02 | 2016-05-04 | 上海鼎晖科技股份有限公司 | 一种cob led光源 |
KR20180128464A (ko) | 2016-04-22 | 2018-12-03 | 글로 에이비 | 소형 피치 직시형 디스플레이 및 이의 제조 방법 |
CN107091412A (zh) * | 2016-09-30 | 2017-08-25 | 深圳市玲涛光电科技有限公司 | 条形光源及其制造方法、背光模组、电子设备 |
CN107093659B (zh) * | 2016-09-30 | 2019-11-01 | 深圳市玲涛光电科技有限公司 | 柔性面光源及其制造方法及电子设备 |
US11203182B2 (en) * | 2017-01-17 | 2021-12-21 | Sekisui Chemical Co., Ltd. | Filling-bonding material, protective sheet-equipped filling-bonding material, laminated body, optical device, and protective panel for optical device |
US10483441B2 (en) * | 2017-06-09 | 2019-11-19 | Sharp Kabushiki Kaisha | Phosphor containing particle, and light emitting device and phosphor containing sheet using the same |
JP7136532B2 (ja) * | 2018-03-30 | 2022-09-13 | ミネベアミツミ株式会社 | モジュールの製造方法及び光学モジュールの製造方法 |
JP7032737B2 (ja) | 2018-06-23 | 2022-03-09 | 株式会社奥村組 | Fcプレートの固定部材および函体構造物の設置方法 |
JP7032736B2 (ja) | 2018-06-23 | 2022-03-09 | 株式会社奥村組 | Fcプレートの固定部材および函体構造物の設置方法 |
CN108803142A (zh) * | 2018-06-28 | 2018-11-13 | 武汉华星光电技术有限公司 | 光源及其制备方法、背光模组、显示面板 |
CN109668062A (zh) * | 2018-12-11 | 2019-04-23 | 业成科技(成都)有限公司 | 发光二极体面光源结构 |
CN109950233A (zh) * | 2019-03-19 | 2019-06-28 | 武汉华星光电技术有限公司 | 一种led封装结构及封装方法 |
CN110488522A (zh) | 2019-07-29 | 2019-11-22 | 武汉华星光电技术有限公司 | 一种触控屏及其制备方法 |
CN110707078A (zh) * | 2019-09-12 | 2020-01-17 | 武汉华星光电技术有限公司 | 一种背光模组及其制备方法、显示装置 |
CN116964520A (zh) * | 2021-06-29 | 2023-10-27 | 三星电子株式会社 | 显示装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003286480A (ja) | 2002-03-05 | 2003-10-10 | Agilent Technol Inc | 改良型のコーティングされた蛍光フィラ及びその形成方法 |
JP2006351809A (ja) | 2005-06-15 | 2006-12-28 | Matsushita Electric Works Ltd | 発光装置 |
JP2007201301A (ja) * | 2006-01-30 | 2007-08-09 | Sumitomo Metal Electronics Devices Inc | 白色ledの発光装置 |
JP2007273562A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | 半導体発光装置 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3900144B2 (ja) | 1998-02-17 | 2007-04-04 | 日亜化学工業株式会社 | 発光ダイオードの形成方法 |
MY142684A (en) * | 2003-02-26 | 2010-12-31 | Cree Inc | Composite white light source and method for fabricating |
JP4238666B2 (ja) * | 2003-07-17 | 2009-03-18 | 豊田合成株式会社 | 発光装置の製造方法 |
CN100454596C (zh) * | 2004-04-19 | 2009-01-21 | 松下电器产业株式会社 | Led照明光源的制造方法及led照明光源 |
CN1705141A (zh) * | 2004-05-25 | 2005-12-07 | 光宝科技股份有限公司 | 白光发光装置与制作方法 |
DE102005033005A1 (de) * | 2005-07-14 | 2007-01-18 | Osram Opto Semiconductors Gmbh | Optoelektronischer Chip |
US7365371B2 (en) * | 2005-08-04 | 2008-04-29 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed encapsulants |
JP2007042901A (ja) * | 2005-08-04 | 2007-02-15 | Rohm Co Ltd | 発光モジュールおよび発光ユニット |
JP2007049019A (ja) * | 2005-08-11 | 2007-02-22 | Koha Co Ltd | 発光装置 |
US7293908B2 (en) * | 2005-10-18 | 2007-11-13 | Goldeneye, Inc. | Side emitting illumination systems incorporating light emitting diodes |
JP4956977B2 (ja) * | 2005-12-05 | 2012-06-20 | 日亜化学工業株式会社 | 発光装置 |
KR101163399B1 (ko) * | 2005-12-26 | 2012-07-12 | 엘지디스플레이 주식회사 | 백라이트유닛 및 이를 구비한 액정표시장치 |
KR100665372B1 (ko) | 2006-02-21 | 2007-01-09 | 삼성전기주식회사 | 광 추출 효율이 높은 발광 다이오드 패키지 구조 및 이의제조방법 |
JP4353196B2 (ja) * | 2006-03-10 | 2009-10-28 | パナソニック電工株式会社 | 発光装置 |
US8969908B2 (en) * | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
US20070269586A1 (en) * | 2006-05-17 | 2007-11-22 | 3M Innovative Properties Company | Method of making light emitting device with silicon-containing composition |
KR100809263B1 (ko) * | 2006-07-10 | 2008-02-29 | 삼성전기주식회사 | 직하 방식 백라이트 장치 |
JP5555971B2 (ja) | 2006-07-18 | 2014-07-23 | 日亜化学工業株式会社 | 線状発光装置およびそれを用いた面状発光装置 |
US8735920B2 (en) | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
US7804147B2 (en) | 2006-07-31 | 2010-09-28 | Cree, Inc. | Light emitting diode package element with internal meniscus for bubble free lens placement |
WO2008023605A1 (fr) | 2006-08-23 | 2008-02-28 | Mitsui Chemicals, Inc. | Corps réfléchissant la lumière et source de lumière le comprenant |
JP2008124267A (ja) | 2006-11-13 | 2008-05-29 | Toyoda Gosei Co Ltd | 発光装置 |
JP2007194675A (ja) * | 2007-04-26 | 2007-08-02 | Kyocera Corp | 発光装置 |
JP4165610B2 (ja) | 2007-08-21 | 2008-10-15 | 豊田合成株式会社 | 発光装置の製造方法 |
DE102007049799A1 (de) | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US20090321758A1 (en) * | 2008-06-25 | 2009-12-31 | Wen-Huang Liu | Led with improved external light extraction efficiency |
-
2009
- 2009-05-29 US US12/995,364 patent/US9634203B2/en active Active
- 2009-05-29 CN CN2009801203335A patent/CN102047452B/zh active Active
- 2009-05-29 BR BRPI0913195A patent/BRPI0913195A2/pt not_active Application Discontinuation
- 2009-05-29 CN CN201310051180.1A patent/CN103199185B/zh active Active
- 2009-05-29 WO PCT/JP2009/059863 patent/WO2009145298A1/ja active Application Filing
- 2009-05-29 JP JP2010514550A patent/JP5512515B2/ja active Active
- 2009-05-29 EP EP09754806.9A patent/EP2293354B1/en active Active
-
2013
- 2013-11-08 JP JP2013232136A patent/JP5844335B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003286480A (ja) | 2002-03-05 | 2003-10-10 | Agilent Technol Inc | 改良型のコーティングされた蛍光フィラ及びその形成方法 |
JP2006351809A (ja) | 2005-06-15 | 2006-12-28 | Matsushita Electric Works Ltd | 発光装置 |
JP2007201301A (ja) * | 2006-01-30 | 2007-08-09 | Sumitomo Metal Electronics Devices Inc | 白色ledの発光装置 |
JP2007273562A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | 半導体発光装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2293354A4 |
Cited By (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10746374B2 (en) | 2007-07-19 | 2020-08-18 | Quarkstar Llc | Nearly index-matched luminescent glass-phosphor composites for photonic applications |
JP2011134442A (ja) * | 2009-12-22 | 2011-07-07 | Toshiba Lighting & Technology Corp | 照明装置 |
JP2011181550A (ja) * | 2010-02-26 | 2011-09-15 | Konica Minolta Opto Inc | 発光装置及びその製造方法 |
US8933475B2 (en) | 2010-03-11 | 2015-01-13 | Kabushiki Kaisha Toshiba | Light emitting device |
JP5716010B2 (ja) * | 2010-03-11 | 2015-05-13 | 株式会社東芝 | 発光装置 |
EP2381157A3 (en) * | 2010-04-20 | 2013-10-16 | Toshiba Lighting & Technology Corporation | Luminaire and light-emitting apparatus with light-emitting device |
US8872198B2 (en) | 2010-04-20 | 2014-10-28 | Toshiba Lighting & Technology Corporation | Luminaire and light-emitting apparatus with light-emitting device |
JP2012003887A (ja) * | 2010-06-15 | 2012-01-05 | Ccs Inc | 照明装置 |
JP4909450B2 (ja) * | 2010-06-28 | 2012-04-04 | パナソニック株式会社 | 発光装置、バックライトユニット、液晶表示装置及び照明装置 |
WO2012001938A1 (ja) * | 2010-06-28 | 2012-01-05 | パナソニック株式会社 | 発光装置、バックライトユニット、液晶表示装置及び照明装置 |
US8450929B2 (en) | 2010-06-28 | 2013-05-28 | Panasonic Corporation | Light emitting device, backlight unit, liquid crystal display apparatus, and lighting apparatus |
US8648370B2 (en) * | 2010-06-29 | 2014-02-11 | SemiLEDs Optoelectronics Co., Ltd. | Wafer-type light emitting device having precisely coated wavelength-converting layer |
US8614453B2 (en) * | 2010-06-29 | 2013-12-24 | SemiLEDs Optoelectronics Co., Ltd. | Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof |
US20110316017A1 (en) * | 2010-06-29 | 2011-12-29 | Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation | Wafer-type light emitting device having precisely coated wavelength-converting layer |
US20110316027A1 (en) * | 2010-06-29 | 2011-12-29 | Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation | Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof |
JP2012015319A (ja) * | 2010-06-30 | 2012-01-19 | Sharp Corp | 発光素子パッケージおよびその製造方法、発光素子アレイ、および表示装置 |
TWI622728B (zh) * | 2010-07-26 | 2018-05-01 | 半導體能源研究所股份有限公司 | 發光裝置及照明裝置 |
TWI582339B (zh) * | 2010-07-26 | 2017-05-11 | 半導體能源研究所股份有限公司 | 發光裝置及照明裝置 |
JP2016048694A (ja) * | 2010-07-26 | 2016-04-07 | 株式会社半導体エネルギー研究所 | 発光装置 |
US8455884B2 (en) * | 2010-07-26 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and lighting device |
US20120020085A1 (en) * | 2010-07-26 | 2012-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Device and Lighting Device |
US9000451B2 (en) | 2010-07-26 | 2015-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and lighting device |
JP2012235157A (ja) * | 2010-09-06 | 2012-11-29 | Toshiba Corp | 発光装置 |
US8546824B2 (en) | 2010-09-06 | 2013-10-01 | Kabushiki Kaisha Toshiba | Light emitting device |
US8558251B2 (en) | 2010-09-06 | 2013-10-15 | Kabushiki Kaisha Toshiba | Light emitting device |
JP2012080084A (ja) * | 2010-09-06 | 2012-04-19 | Toshiba Corp | 発光装置 |
JP2012080083A (ja) * | 2010-09-06 | 2012-04-19 | Toshiba Corp | 発光装置 |
US8921878B2 (en) | 2010-09-07 | 2014-12-30 | Kabushiki Kaisha Toshiba | Light emitting device |
EP2426745A3 (en) * | 2010-09-07 | 2014-04-30 | Kabushiki Kaisha Toshiba | Wavelength conversion configuration for a light emitting device |
CN102403438A (zh) * | 2010-09-07 | 2012-04-04 | 株式会社东芝 | 发光装置 |
DE112011103147B4 (de) | 2010-09-20 | 2022-11-03 | Creeled, Inc. | LED-Vorrichtung |
US9041042B2 (en) | 2010-09-20 | 2015-05-26 | Cree, Inc. | High density multi-chip LED devices |
JP2012074379A (ja) * | 2010-09-29 | 2012-04-12 | Samsung Electronics Co Ltd | 発光ダイオードパッケージを有するバックライトアセンブリ及びこれを有する表示装置 |
WO2012052432A3 (de) * | 2010-10-19 | 2012-07-05 | Osram Ag | Leuchtvorrichtung zur flächigen lichtabstrahlung |
US9625121B2 (en) | 2010-12-01 | 2017-04-18 | Sharp Kabushiki Kaisha | Light emitting device, vehicle headlamp, illumination device, and vehicle |
KR101915816B1 (ko) * | 2011-01-04 | 2018-11-06 | 엘지전자 주식회사 | 디스플레이 장치 |
US9123867B2 (en) | 2011-01-28 | 2015-09-01 | Nichia Corporation | Light emitting device |
EP2482346A1 (en) | 2011-01-28 | 2012-08-01 | Nichia Corporation | Light emitting device |
US9366399B2 (en) | 2011-03-03 | 2016-06-14 | Sharp Kabushiki Kaisha | Light emitting device, illumination device, and vehicle headlamp |
JP2013012694A (ja) * | 2011-06-03 | 2013-01-17 | Toshiba Lighting & Technology Corp | 発光装置及び照明装置 |
US9108568B2 (en) | 2011-06-29 | 2015-08-18 | Sharp Kabushiki Kaisha | Light-projecting device, and vehicle headlamp including light-projecting device |
US9328890B2 (en) | 2011-06-29 | 2016-05-03 | Sharp Kabushiki Kaisha | Light projecting device and vehicular headlamp |
JP2013038222A (ja) * | 2011-08-08 | 2013-02-21 | Citizen Holdings Co Ltd | 発光デバイス |
JP2013038221A (ja) * | 2011-08-08 | 2013-02-21 | Citizen Holdings Co Ltd | 発光デバイス |
JP2020074401A (ja) * | 2011-11-23 | 2020-05-14 | クォークスター・エルエルシー | 光を非対称に伝搬させる発光デバイス |
US11353167B2 (en) | 2011-11-23 | 2022-06-07 | Quarkstar Llc | Light-emitting devices providing asymmetrical propagation of light |
JP2015506091A (ja) * | 2011-11-23 | 2015-02-26 | クォークスター・エルエルシー | 光を非対称に伝搬させる発光デバイス |
JP2017208576A (ja) * | 2011-11-23 | 2017-11-24 | クォークスター・エルエルシー | 光を非対称に伝搬させる発光デバイス |
US10451250B2 (en) | 2011-11-23 | 2019-10-22 | Quickstar LLC | Light-emitting devices providing asymmetrical propagation of light |
US10408428B2 (en) | 2011-11-23 | 2019-09-10 | Quarkstar Llc | Light-emitting devices providing asymmetrical propagation of light |
US11009193B2 (en) | 2011-11-23 | 2021-05-18 | Quarkstar Llc | Light-emitting devices providing asymmetrical propagation of light |
JP2013168626A (ja) * | 2012-02-15 | 2013-08-29 | Polar-Lights Opto Co Ltd | Cob型混光led電光盤 |
JP2014165320A (ja) * | 2013-02-25 | 2014-09-08 | Citizen Electronics Co Ltd | Led装置の製造方法 |
JPWO2014171394A1 (ja) * | 2013-04-15 | 2017-02-23 | シャープ株式会社 | 照明装置、照明機器および表示装置 |
US10018776B2 (en) | 2013-04-15 | 2018-07-10 | Sharp Kabushiki Kaisha | Illumination device, illumination equipment, and display device |
WO2014171394A1 (ja) * | 2013-04-15 | 2014-10-23 | シャープ株式会社 | 照明装置、照明機器および表示装置 |
JP2014060164A (ja) * | 2013-10-28 | 2014-04-03 | Sharp Corp | 発光装置、および照明装置 |
JP2015111636A (ja) * | 2013-12-06 | 2015-06-18 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
US11313996B2 (en) | 2014-01-23 | 2022-04-26 | Lumileds Llc | Light emitting device with self-aligning preformed lens |
JP2016119454A (ja) * | 2014-12-17 | 2016-06-30 | 日東電工株式会社 | 蛍光体層被覆光半導体素子およびその製造方法 |
US10032969B2 (en) | 2014-12-26 | 2018-07-24 | Nichia Corporation | Light emitting device |
US11031532B2 (en) | 2014-12-26 | 2021-06-08 | Nichia Corporation | Light emitting device |
US10847688B2 (en) | 2014-12-26 | 2020-11-24 | Nichia Corporation | Light emitting device |
JP2017103488A (ja) * | 2017-03-06 | 2017-06-08 | シャープ株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
CN103199185A (zh) | 2013-07-10 |
JP5844335B2 (ja) | 2016-01-13 |
EP2293354B1 (en) | 2020-05-06 |
US20110085352A1 (en) | 2011-04-14 |
CN103199185B (zh) | 2015-07-08 |
EP2293354A4 (en) | 2015-01-14 |
CN102047452A (zh) | 2011-05-04 |
CN102047452B (zh) | 2013-03-20 |
BRPI0913195A2 (pt) | 2016-01-12 |
EP2293354A1 (en) | 2011-03-09 |
US9634203B2 (en) | 2017-04-25 |
JP5512515B2 (ja) | 2014-06-04 |
JP2014064021A (ja) | 2014-04-10 |
JPWO2009145298A1 (ja) | 2011-10-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5844335B2 (ja) | 発光装置、面光源および液晶表示装置 | |
JP5676599B2 (ja) | 散乱粒子領域を有するledパッケージ | |
US8946749B2 (en) | Semiconductor light emitting device | |
US8757826B2 (en) | Light-emitting device, method for producing the same, and illuminating device | |
JP7235944B2 (ja) | 発光装置及び発光装置の製造方法 | |
JP2019079873A (ja) | 発光モジュールおよび集積型発光モジュール | |
JP5332960B2 (ja) | 発光装置 | |
US11489097B2 (en) | Light emitting device including light transmissive cover member including an annular lens part, and LED package | |
JP5543386B2 (ja) | 発光装置、その製造方法及び照明装置 | |
JP5462078B2 (ja) | 半導体発光装置及びその製造方法 | |
JP2009094199A (ja) | 発光装置、面光源、表示装置と、その製造方法 | |
JP5334123B2 (ja) | 半導体発光装置、半導体発光装置アセンブリ、および半導体発光装置の製造方法 | |
JP5330855B2 (ja) | 半導体発光装置 | |
WO2013089108A1 (ja) | 発光モジュール | |
JP7350144B2 (ja) | 発光装置 | |
JP7285439B2 (ja) | 面状光源 | |
JP6383539B2 (ja) | 発光装置 | |
JP2020107837A (ja) | 発光装置とその製造方法 | |
JP2017163002A (ja) | 発光装置、及び、照明装置 | |
JP2007207939A (ja) | 発光装置 | |
US20220173283A1 (en) | Light-emitting device and planar light source | |
JP2015111626A (ja) | 発光装置およびその製造方法 | |
JP2024124622A (ja) | 発光装置 | |
JP2023081081A (ja) | 面状光源の製造方法、面状光源 | |
JP2019021744A (ja) | 発光装置、及び、照明装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980120333.5 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09754806 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010514550 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12995364 Country of ref document: US Ref document number: 2009754806 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: PI0913195 Country of ref document: BR Kind code of ref document: A2 Effective date: 20101129 |