JP6383539B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP6383539B2 JP6383539B2 JP2014004031A JP2014004031A JP6383539B2 JP 6383539 B2 JP6383539 B2 JP 6383539B2 JP 2014004031 A JP2014004031 A JP 2014004031A JP 2014004031 A JP2014004031 A JP 2014004031A JP 6383539 B2 JP6383539 B2 JP 6383539B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- film
- led
- light emitting
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
- 238000000605 extraction Methods 0.000 claims description 14
- 230000007423 decrease Effects 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims 2
- 239000000463 material Substances 0.000 description 31
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000002270 dispersing agent Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 238000005253 cladding Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/20—Structure, shape, material or disposition of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
(第1の実施形態)
図1は、第1の実施形態に従ったLED100の構成の一例を示す断面図である。LED100は、支持基板10と、電極20と、LEDチップ30と、中間膜40と、蛍光膜50と、レンズ60とを備えている。
図5は、第2の実施形態に従ったLED200の構成の一例を示す断面図である。LED200の中間膜40の表面は、LEDチップ30の両側において凸凹形状を有する。第2の実施形態によるLED200のその他の構成は、第1の実施形態によるLED100の対応する構成と同様でよい。LEDチップ30の両側において中間膜40の表面に凹凸形状があることによって、LED30の端部において光が散乱され、LEDチップ30の端から光をより容易に取り出すことができる。中間膜40の凹凸形状の大きさ(凹部の底と凸部の頂点との差)は、LEDチップ30から取り出す光波長(例えば、約450nm前後)と略等しいことが好ましい。これにより、所望の波長の光(例えば、青色光)を取出し易くなる。これは、光が中間膜40とレンズ60との界面において全反射することなく散乱されるため、その界面における臨界角という制約がなくなるからである。
図6は、第3の実施形態に従ったLED300の構成の一例を示す断面図である。LED300の中間膜40は、屈折率の異なる複数の材料層41〜43を積層した多層膜である。材料層41の屈折率は、LEDチップ30の屈折率よりも小さい。材料層42の屈折率は、材料層41の屈折率よりも小さい。材料層43の屈折率は、材料層42の屈折率よりも小さく、かつ、蛍光膜50の屈折率よりも大きい。材料層41は、例えば、SiNx、ZrO、TiO2等の高屈折率材料を用いて形成される。材料層42は、例えば、HFO2、ZnO、Al2O3等の中間屈折率材料を用いて形成される。材料層43は、例えば、SiO2等の低屈折率材料を用いて形成されている。第3の実施形態によるLED300の他の構成は、第1の実施形態によるLED100の対応する構成と同様でよい。
図7は、第4の実施形態に従ったLED400の構成の一例を示す断面図である。LED400は、LEDチップ30の側面を被覆し、かつ、中間膜40の下に設けられた反射膜70をさらに備えている。即ち、第4の実施形態において、LEDチップ30の両側には、反射膜70が設けられている。反射膜70は、例えば、光を反射する白色の材料を含む樹脂でよい。第4の実施形態によるLED400の他の構成は、第1の実施形態によるLED100の対応する構成と同様でよい。
図8は、第5の実施形態に従ったLED500の構成の一例を示す断面図である。第5の実施形態において、LED500の底面および上面は平坦に形成されている。従って、透明部61は、レンズ型を有さず、平坦な形状を有する。
Claims (5)
- 基板と、前記基板上に設けられた発光部とを含む発光素子と、
前記発光素子を被覆する第1の膜と、
前記第1の膜上に設けられ、前記発光素子の光取出し面の少なくとも中心部の上方を部分的に被覆し、前記発光素子の前記光取出し面の端部の上方を被覆しない蛍光膜と、
前記蛍光膜上に設けられた透明部と、
前記発光素子の前記基板の側面を被覆し、かつ、前記第1の膜の下に設けられ、前記発光素子からの光を反射する反射膜と、
を備えた発光装置。 - 前記第1の膜の屈折率は、前記透明部の屈折率よりも大きいことを特徴とする請求項1に記載の発光装置。
- 前記第1の膜の表面は、凸凹形状を含むことを特徴とする請求項1または請求項2に記載の発光装置。
- 前記第1の膜の屈折率は、前記発光素子の前記光取出し面側において大きく、前記蛍光
膜に近づくに従って次第に小さくなっていくことを特徴とする請求項1から請求項3のいずれか一項に記載の発光装置。 - 支持基板と、
前記支持基板上に設けられた電極と、
前記支持基板上に設けられた発光素子と、
前記発光素子および前記電極を被覆する第1の膜と、
前記第1の膜上に設けられ、前記発光素子の光取出し面の少なくとも中心部の上方を部分的に被覆し、前記発光素子の前記光取出し面の端部の上方を被覆しない蛍光膜と、
前記蛍光膜上に設けられた透明部と、
を備え、
前記第1の膜において前記電極を被覆する部分の表面は凸凹形状を含んでおり、前記第1の膜と前記蛍光膜との界面は凸凹形状を含まないこと、を特徴とする発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014004031A JP6383539B2 (ja) | 2014-01-14 | 2014-01-14 | 発光装置 |
CN201410226984.5A CN104779336A (zh) | 2014-01-14 | 2014-05-27 | 发光装置 |
US14/474,054 US20150200340A1 (en) | 2014-01-14 | 2014-08-29 | Light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014004031A JP6383539B2 (ja) | 2014-01-14 | 2014-01-14 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015133403A JP2015133403A (ja) | 2015-07-23 |
JP6383539B2 true JP6383539B2 (ja) | 2018-08-29 |
Family
ID=53522077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014004031A Expired - Fee Related JP6383539B2 (ja) | 2014-01-14 | 2014-01-14 | 発光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20150200340A1 (ja) |
JP (1) | JP6383539B2 (ja) |
CN (1) | CN104779336A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016112275B4 (de) * | 2016-07-05 | 2022-10-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum herstellen einer optoelektronischen leuchtvorrichtung und optoelektronische leuchtvorrichtung |
US10923635B2 (en) * | 2016-12-30 | 2021-02-16 | Lumileds Llc | Phosphor deposition system for LEDs |
US10615321B2 (en) * | 2017-08-21 | 2020-04-07 | Seoul Semiconductor Co., Ltd. | Light emitting device package |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6222491A (ja) * | 1985-07-23 | 1987-01-30 | Toshiba Corp | 半導体発光装置 |
KR100425566B1 (ko) * | 1999-06-23 | 2004-04-01 | 가부시키가이샤 시티즌 덴시 | 발광 다이오드 |
US7157745B2 (en) * | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
RU2008133603A (ru) * | 2006-01-16 | 2010-02-27 | Конинклейке Филипс Электроникс Н.В. (Nl) | Светоизлучающее устройство с eu-содержащим кристаллофосфором |
JP2008300580A (ja) * | 2007-05-30 | 2008-12-11 | Nichia Corp | 発光素子及び発光装置 |
KR101623422B1 (ko) * | 2007-06-27 | 2016-05-23 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 고 효율 백색 발광 다이오드들을 위한 광학 설계들 |
US8916890B2 (en) * | 2008-03-19 | 2014-12-23 | Cree, Inc. | Light emitting diodes with light filters |
JP2010199513A (ja) * | 2009-02-27 | 2010-09-09 | Panasonic Corp | 発光装置及びこの発光装置を備えた照明装置 |
JP2013110154A (ja) * | 2011-11-17 | 2013-06-06 | Sanken Electric Co Ltd | 発光装置 |
JP2013110199A (ja) * | 2011-11-18 | 2013-06-06 | Citizen Electronics Co Ltd | Led発光装置 |
JP6038443B2 (ja) * | 2011-11-21 | 2016-12-07 | スタンレー電気株式会社 | 半導体発光装置および半導体発光装置の製造方法 |
-
2014
- 2014-01-14 JP JP2014004031A patent/JP6383539B2/ja not_active Expired - Fee Related
- 2014-05-27 CN CN201410226984.5A patent/CN104779336A/zh not_active Withdrawn
- 2014-08-29 US US14/474,054 patent/US20150200340A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN104779336A (zh) | 2015-07-15 |
US20150200340A1 (en) | 2015-07-16 |
JP2015133403A (ja) | 2015-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6106120B2 (ja) | 半導体発光装置 | |
US20150054011A1 (en) | Light emitting device | |
TWI794311B (zh) | 發光模組及整合式發光模組 | |
US10727381B2 (en) | Light emitting device | |
US10439113B2 (en) | Light emitting device | |
TW201611339A (zh) | 半導體發光裝置 | |
TWI566440B (zh) | 光電組件及用於製造光電組件之方法 | |
US10324242B2 (en) | Optical component and light emitting device | |
JP2017117858A (ja) | 発光装置 | |
JP2016062899A (ja) | 半導体発光装置 | |
JP2013084881A (ja) | 発光素子 | |
JP7235944B2 (ja) | 発光装置及び発光装置の製造方法 | |
JP2015176960A (ja) | 発光装置 | |
JP2016171188A (ja) | 半導体発光装置とその製造方法 | |
JP6282438B2 (ja) | 半導体発光装置 | |
US9812620B2 (en) | Light emitting device and method of manufacturing the light emitting device | |
JP6383539B2 (ja) | 発光装置 | |
JP2014082525A (ja) | 発光装置及びその製造方法 | |
JP6661964B2 (ja) | 発光装置 | |
JP2014160742A (ja) | 発光装置 | |
JP2015015418A (ja) | 半導体発光装置 | |
US10825971B2 (en) | Light-emitting device including a Distributed Bragg Reflector (DBR) film | |
JP7285439B2 (ja) | 面状光源 | |
JP2019165237A (ja) | 発光装置 | |
US11063190B2 (en) | Light-emitting diode package component |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170110 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20170316 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20170316 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170324 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170816 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20171016 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20171130 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171215 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180413 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180612 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180629 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180719 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180730 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180806 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6383539 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |