WO2009104684A1 - 熱交換装置 - Google Patents
熱交換装置 Download PDFInfo
- Publication number
- WO2009104684A1 WO2009104684A1 PCT/JP2009/052904 JP2009052904W WO2009104684A1 WO 2009104684 A1 WO2009104684 A1 WO 2009104684A1 JP 2009052904 W JP2009052904 W JP 2009052904W WO 2009104684 A1 WO2009104684 A1 WO 2009104684A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electron
- heat exchange
- emitting device
- heat
- contact member
- Prior art date
Links
- 239000010409 thin film Substances 0.000 claims abstract description 50
- 230000001133 acceleration Effects 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000005684 electric field Effects 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 239000012212 insulator Substances 0.000 claims abstract description 14
- 239000010419 fine particle Substances 0.000 claims description 64
- 238000001816 cooling Methods 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 36
- 239000003989 dielectric material Substances 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 4
- 229930195729 fatty acid Natural products 0.000 claims description 4
- 239000000194 fatty acid Substances 0.000 claims description 4
- 150000004665 fatty acids Chemical class 0.000 claims description 4
- 229920000620 organic polymer Polymers 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 239000012141 concentrate Substances 0.000 abstract description 7
- 238000007599 discharging Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 44
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 230000000694 effects Effects 0.000 description 16
- 238000002474 experimental method Methods 0.000 description 16
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
- 238000009529 body temperature measurement Methods 0.000 description 5
- 238000007664 blowing Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 210000003746 feather Anatomy 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000010525 oxidative degradation reaction Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- -1 alcoholate Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/16—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying an electrostatic field to the body of the heat-exchange medium
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/16—Constructional details or arrangements
- G06F1/20—Cooling means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/16—Constructional details or arrangements
- G06F1/20—Cooling means
- G06F1/203—Cooling means for portable computers, e.g. for laptops
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20009—Modifications to facilitate cooling, ventilating, or heating using a gaseous coolant in electronic enclosures
- H05K7/20136—Forced ventilation, e.g. by fans
- H05K7/20172—Fan mounting or fan specifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20954—Modifications to facilitate cooling, ventilating, or heating for display panels
- H05K7/20972—Forced ventilation, e.g. on heat dissipaters coupled to components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- Non-Patent Document 2 describes conditions necessary for stably generating corona discharge.
- a structure that easily concentrates the electric field such as a cooling fin of a heat sink is formed.
- an ion wind is generated by performing wire discharge between cooling fins that tend to concentrate an electric field, it is difficult to continuously and stably supply the ion wind.
- the present invention has been made in view of the above problems, and an object of the present invention is to realize a heat exchange device that can maintain and improve heat exchange performance without depending on a structure that easily concentrates an electric field. .
- the present inventors face (separate) an electron-emitting device capable of emitting electrons with an internal electric field (which does not require an external electric field) with a contact member that contacts the heat exchanger instead of a conventional wire discharge device.
- the heat exchange device of the present invention has a configuration including an electron-emitting device that is disposed apart from a conductive contact member that is in contact with a heat exchanger.
- the electron-emitting device includes an electrode substrate, a thin film electrode, a first voltage applying unit that applies a voltage between the electrode substrate and the thin film electrode, and a voltage applied by the first voltage applying unit.
- An electron acceleration layer that accelerates electrons to be emitted from the thin film electrode, and at least a part of the electron acceleration layer is made of an insulator.
- the electron emission device capable of emitting electrons with an internal electric field is arranged so as to be separated from the contact member.
- the electron-emitting device can stably supply electrons to the atmosphere and generate an ion wind.
- the heat exchange apparatus of the present invention does not generate an ion wind by corona discharge such as a conventional wire discharge element, but generates an ion wind by an electron emitting element capable of emitting electrons in an internal electric field.
- the conventional ion wind cooling device unlike the conventional ion wind cooling device, it is not necessary to reduce the number of discharge parts in order to reduce the size of the device. Furthermore, it is not necessary to reduce the distance between the wire discharge electrodes. Therefore, according to said structure, the problems which had arisen with the ion wind cooling device by the conventional corona discharge, such as the distance between the electrodes for wire discharge, are not caused. Therefore, for example, when a heat sink is used as the contact member, according to the above configuration, the number of fins can be increased even when the device size is the same as compared with the conventional ion wind generator when the device is downsized. It becomes possible to improve the heat exchange capacity.
- FIG. 1 It is sectional drawing which shows a preferable example of the heat exchange apparatus (cooling device) of one Embodiment of this invention. It is the principal part enlarged view which expanded the part of the heat sink and electron-emitting element in the heat exchange apparatus shown by FIG. It is the principal part expanded sectional view which expanded the electron acceleration layer in the heat exchange apparatus shown by FIG. It is a figure which shows the energy band of the fine particle layer (electron acceleration layer) of an electron emission element in the heat exchange apparatus shown by FIG. It is sectional drawing which shows the structure of the heat exchange apparatus used in Example 1. FIG. It is a graph which shows the result of having verified the cooling effect using the heat exchange apparatus in Example 1.
- FIG. 1 It is a graph which shows the result of having verified the cooling effect using the heat exchange apparatus in Example 1.
- FIG. 1 is a cross-sectional view showing a preferred example of a heat exchange device (cooling device) 1 of the present embodiment.
- the electron-emitting device 4 is separated from the surface 3a of the heat sink 3 and applies electrons to the heat sink 3 through the air in the separated portion. Further, the heat sink 3 and the electron-emitting device 4 are connected to a power source 5. A voltage is applied between the heat sink 3 and the electron-emitting device 4 by the power source 5. At this time, electrons are emitted from the electron-emitting device 4. Then, the electrons collide with air molecules present in the separated portion between the heat sink 3 and the electron emitter 4. Air molecules are ionized by this collision. Then, ionized air molecules move along the direction of the arrow in FIG. 1 (along the electric field between the heat sink 3 and the electron-emitting device 4), thereby generating an ion wind.
- the heat exchange device 1 includes the two power supplies 5 and 10.
- the power supply 10 accelerates electrons in the electron acceleration layer 8 of the electron-emitting device 4 and emits electrons from the thin film electrode 9.
- the power source 5 is used to apply electrons emitted from the thin film electrode 9 to the heat sink 3.
- the electrode substrate 7 of the electron-emitting device 4 may be a metal substrate such as SUS, Ti, or Cu, or may be a semiconductor substrate such as Si, Ge, or GaAs. Further, if an insulator substrate such as a glass substrate is used, it can be used as the electrode substrate 7 by attaching a conductive substance such as a metal as an electrode to the interface on the electron acceleration layer 8 side.
- the thin film electrode 9 applies a voltage in the electron acceleration layer 8. Therefore, any material that can be applied with voltage can be used without particular limitation. However, from the standpoint that electrons accelerated and increased in the electron acceleration layer 8 are transmitted with as little energy loss as possible and emitted, the material is higher if the material has a low work function and can form a thin film. The effect can be expected. Examples of such a material include gold, carbon, titanium, nickel, and aluminum.
- the electron acceleration layer 8 only needs to contain conductive fine particles made of a conductor having a first dielectric material around it and a second dielectric material larger than the size of the conductive fine particles.
- the first dielectric material is a coating material that coats the conductive fine particles, and the conductive fine particles will be described as metal fine particles 12 with an insulating coating.
- the second dielectric material is described as insulating fine particles 11 that are fine particles having an average diameter larger than the average diameter of the metal fine particles 12 with insulating coating.
- the configuration of the electron acceleration layer 8 is not limited to the above-described one.
- the second dielectric material is laminated on the electrode substrate 7 in a sheet shape and has a plurality of penetrating in the lamination direction. An opening may be provided, and the opening may contain conductive fine particles dielectrically coated with a coating material.
- an insulating film made of an organic material is preferable, and examples thereof include materials such as alcoholate, fatty acid, and alkanethiol.
- materials such as alcoholate, fatty acid, and alkanethiol.
- the material of the insulating fine particles 11 can be used without particular limitation as long as it is an insulating material. However, it is desirable that the ratio of the insulating fine particles 11 with respect to all the materials constituting the electron acceleration layer 8 is 80 to 95 w%.
- the number ratio between the insulating fine particles 11 and the metal fine particles 12 is about 2 to 300 metal fine particles 12 with respect to one insulating fine particle 11, that is, 1: 2 to 300. Sometimes a moderate resistivity and heat dissipation effect is obtained.
- the diameter of the insulating fine particles 11 is preferably 5 to 1000 nm. Therefore, the material of the insulating fine particles 11 is practically SiO 2 , Al 2 O 3 , or TiO 2 . Or an organic polymer may be sufficient.
- the electron acceleration layer 8 As the electron acceleration layer 8 is thinner, a stronger electric field is applied, so that electrons can be accelerated by applying a low voltage. However, since the electron acceleration layer 8 is not thinner than the average diameter of the fine particles 11 of the insulator, the thickness is 5 to 1000 nm. Is preferred.
- the insulating coated metal fine particles 12 are in contact with each other to some extent, and the insulator and the conductor are alternately present in that portion.
- the energy band diagram is as shown in FIG.
- the electron-emitting device 4 generates an air flow at atmospheric pressure.
- the airflow is sent by an electric field to the heat sink 3 in contact with the heating element 2.
- the airflow velocity of the ion wind increases and the cooling effect increases.
- the heat sink 3 in the heat exchange device 1 has a concave portion or a convex portion at least in part. If the heat sink has at least part of the recesses or protrusions, heat can be transferred to more gas molecules, and the heat dissipation effect is increased.
- the electron-emitting device 4 and the heat sink 3 in parallel, it is possible to transmit the ion wind to the heat sink 3 without concentrating the electric field in the electron-emitting device. Thereby, since the gas molecule which generate
- the electric field strength between the heat sink 3 and the thin film electrode 9 of the electron-emitting device 4 is not particularly limited, but is, for example, 1 V / m or more, preferably 10 V / m or more, more preferably 1000 V / m or more. It is. Moreover, in order to prevent generation
- the airflow generated from the electron-emitting device 4 and the airflow generated by the rotary blade airflow generator may be combined, or the rotary blade airflow generator may not be used.
- the angle at which the heat sink 3 and the electron emission surface of the thin film electrode 9 of the electron emitter 4 face each other is not particularly limited, and is preferably 0 ° to 90 °, and more preferably 0 ° to 90 °. It is 45 °, particularly preferably 0 ° to 10 °.
- Example 1 As an Example, the experiment which verified the heat dissipation effect in the heat exchange apparatus according to the present invention will be described with reference to FIGS. In addition, this experiment is an example of implementation and does not limit the content of the present invention.
- the heating element 2 is generated only by the air flow of the fan (air flow generator) 14. Cooled.
- the heating element 2 was cooled by the combination of the air flow of the fan 14 and the ions 30 emitted from the electron-emitting device 4 while a voltage was applied to the power source 5.
- FIG. 6 shows the results of measuring the temporal change in the temperature of the heating element 2 in the first experiment and the second experiment. As shown in FIG. 6, it can be seen that the temperature of the heating element 2 in the second experiment decreases more rapidly than in the first experiment. Further, after 60 seconds of temperature measurement, it was revealed that the temperature decrease width in the cooling by the second experiment was about 767% of the temperature decrease width in the cooling by the first experiment.
- the electron-emitting device 16 is characterized by being flexible.
- the electron-emitting device 16 includes a flexible substrate 18, a substrate thin film electrode 17, an electron acceleration layer 8, and a thin film electrode 9.
- the substrate thin film electrode 17 and the thin film electrode 9 are connected to a power source 10.
- the electron-emitting device 16 accelerates electrons between the substrate thin film electrode 17 and the thin film electrode 9 (that is, the electron acceleration layer 8) by applying a voltage between the substrate thin film electrode 17 and the thin film electrode 9, Electrons are emitted from the thin film electrode 9.
- FIG. 8 is a view showing the rotary vane airflow generator 19 in the heat exchange device of the present embodiment.
- the rotary wing type airflow generator 19 includes wings 20, and by rotating the wings 20, the airflow is sent to a heating element (heat exchange body). ing.
- the wing 20 rotates in the rotation direction R (the direction of the arrow in the figure), so that an air flow is blown from the back side to the front side (front side).
- R the direction of the arrow in the figure
- S the air flow blowing direction S.
- the heat sink 3 is arranged facing the surface 20a of the wing 20 in the rotary wing type airflow generator 19.
- the heat sink 3 is in contact with the heating element 2.
- the rotating blade type airflow generator 19 is provided with the electron-emitting device 4 of the first embodiment or the electron-emitting device 16 of the second embodiment. That is, the electrode substrate 7 or the flexible base material 18 is provided on the surface 20 a of the wing 20.
- FIG. 9 is a view showing an electron-emitting device in the heat exchange device of the present embodiment.
- an air flow is blown from the back side to the front side (front side) on the paper surface, which is shown as an air flow blowing direction S ′.
- the mesh base material 22 is provided with the electron-emitting device 4 of the first embodiment or the electron-emitting device 16 of the second embodiment. That is, the electrode substrate 7 or the flexible base material 18 is provided on the surface 22 a of the mesh base material 22.
- the cooling device of the present invention can stably emit ion wind even when the distance between the electrodes is narrowed, the cooling device can be downsized.
- an electron-emitting device as an electron source device can be formed on a flexible surface or a surface with unevenness by a coating method
- a cooling function can be mounted on a television cabinet. It is possible to simultaneously reduce the thickness of the TV and cool the heat generating part of the TV.
- the heat exchange device is provided with the conductive contact member that contacts the heat exchanger and the contact member, and the electronic device is connected to the contact member via the air in the separated portion.
- a first voltage applying means for applying a voltage between the electrode substrate, the thin film electrode, and the electrode substrate and the thin film electrode.
- an electron acceleration layer for accelerating electrons therein by applying voltage by the first voltage applying means and emitting the electron from the thin film electrode, wherein the electron acceleration layer is at least partially composed of an insulator. It is characterized by being.
- the electron acceleration layer includes conductive fine particles made of a conductor in which a first dielectric material is present in the periphery, and a second dielectric material larger than the size of the conductive fine particles. It is preferably included.
- the second dielectric material can adjust the resistance value in the electron acceleration layer.
- the second dielectric material can play a role of releasing heat generated in the process of repeatedly tunneling the metal fine particles coated with insulating films, thereby preventing the electron-emitting device from being destroyed by heat. be able to.
- the conductor constituting the conductive fine particles contains at least one of gold, silver, platinum, nickel, and palladium.
- the conductive material forming the conductive fine particles contains at least one of gold, silver, platinum, nickel, and palladium, so that the conductive fine particles are oxidized by oxygen in the atmosphere. It is possible to prevent the device from deteriorating. Therefore, the lifetime of the electron-emitting device can be extended.
- the first dielectric material contains at least one of alcoholate, fatty acid, and alkanethiol, so that the first dielectric is obtained by oxidation of conductive fine particles by oxygen in the atmosphere. It is possible to prevent device deterioration such as material growth. Therefore, the lifetime of the electron-emitting device can be extended more effectively.
- the second dielectric material contains at least one of SiO 2 , Al 2 O 3 , and TiO 2 , or contains an organic polymer.
- the second dielectric material contains at least one of SiO 2 , Al 2 O 3 , and TiO 2 , or contains an organic polymer, these materials have high insulation properties.
- the resistance value of the electron acceleration layer can be adjusted to an arbitrary range.
- the thin film electrode preferably contains at least one of gold, carbon, nickel, titanium, and aluminum.
- the electrons accelerated in the fine particle layer are efficiently tunneled from the low work function of these materials, More high-energy electrons can be emitted outside the electron-emitting device.
- the first dielectric material is a coating material that coats the conductive fine particles, and the coating material is coated with a film thickness smaller than the average diameter of the conductive fine particles
- the second dielectric material is preferably fine particles having an average diameter larger than the average diameter of the conductive fine particles dielectrically coated with the coating material.
- the fine particles as the second dielectric material have an average diameter of 30 to 1000 nm.
- the conductive fine particles coated with the dielectric film have an average diameter of 10 nm or less.
- the average diameter of the conductive fine particles coated with the dielectric is 10 nm or less, the average diameter of the conductive fine particles is equal to or less than the average free path of electrons in the conductor, so that the electrons pass through the fine particles without being scattered. To do. As a result, it becomes ballistic electrons and has high energy.
- the resistance value in the electron acceleration layer can be increased appropriately, and a large amount of electrons flow at once. This can prevent the electron-emitting device from being destroyed.
- the heat exchange device may be a cooling device that cools a heating element as a heat exchanger.
- the contact member is a heat sink in which an uneven portion is formed on a surface facing the electron-emitting device.
- the electron-emitting devices are desirably arranged in parallel along the uneven shape of the heat sink.
- the electron-emitting device is configured to generate an air flow at atmospheric pressure.
- the electron-emitting device is adapted to generate an air flow at atmospheric pressure and is not operating in a vacuum. For this reason, the air velocity of ion wind increases and the heat exchange effect increases.
- the heat exchange device of the present invention it is preferable that a flat or curved base is further provided, and the electron-emitting device is formed on the base. Furthermore, the electron-emitting device preferably has flexibility.
- the electron-emitting devices for example, it is possible to install the electron-emitting devices in parallel along the curved surface shape with respect to the heat exchange object to be heat-exchanged in a curved surface shape. For this reason, electric field concentration in the element can be prevented, and energization in the element can be prevented. Furthermore, according to the above configuration, the electron-emitting device emits electrons in a planar shape. And since the airflow (ionic wind) with an electric charge is discharge
- the wing has an wing arranged to face the contact member, and includes a rotary wing type air flow generator that blows an air flow to the contact member by rotation of the wing. It is preferable that the electron-emitting device is provided on the surface facing the contact member.
- the electron-emitting device is provided on the surface of the rotary wing type airflow generator facing the contact member, so that the ions generated by the collision of the electrons emitted from the electron-emitting device are Then, it rides on the air flow blown to the contact member and reaches the contact member. That is, the ions reach the contact member in a state where there is no resistance due to the air flow.
- the apparatus can be reduced in size and power consumption can be reduced.
- a second voltage applying means for applying a voltage between the contact member and the electron-emitting device is provided, and the voltage applied by the second voltage applying means is less than 0V. It is large and preferably +10 kV or less.
- the electric field strength of the electric field generated between the contact member and the electron-emitting device is preferably 1 V / m to 10 7 V / m.
- an electron can be given to the oxygen molecule in the said air molecule with energy lower than 6 electron volts which is the dissociation energy of oxygen. For this reason, generation
- the contact member is preferably connected to ground.
- the contact member is disposed at an angle of 0 ° to 90 ° with respect to the electron emission surface of the thin film electrode in the electron emission element.
- the electron-emitting device is made of a material that is difficult to oxidize, it can be driven in the vicinity of a high-temperature object for a long time.
- the heat exchange device of the present invention can stably discharge ion wind even if the distance between the electrodes is narrowed, the cooling device can be downsized. In addition, it can be used for liquid crystal televisions and notebook computers that need to be efficiently cooled in a narrow space and that must suppress wind noise from the fan.
Abstract
Description
2 発熱体(被熱交換体)
3 ヒートシンク(接触部材)
4,16 電子放出素子
5 電源(第二の電圧印加手段)
6 アース
7 電極基板
8 電子加速層
9 薄膜電極
10 電源(第一の電圧印加手段)
11 絶縁体の微粒子(第二の誘電体物質)
12 金属微粒子(周囲に第一の誘電体物質が存在する導電体からなる導電微粒子)
13 送風管
14 ファン
15 温度測定端子
17 基板薄膜電極
18 フレキシブル基材
19 回転羽式空気流発生器
20 羽
20a 表面
21 電子放出素子
22 メッシュ基材
22a 表面
30 イオン
本発明の一実施形態について図1ないし図9に基づいて説明すると以下の通りである。なお、以下に記述する構成は、本発明の具体的な一例に過ぎず、本発明はこれに限定されるものではない。図1は、本実施形態の熱交換装置(冷却装置)1の好ましい一例を示す断面図である。
実施例として、本発明に係る熱交換装置において、放熱効果の検証した実験について図5及び図6を用いて説明する。なお、この実験は実施の一例であって、本発明の内容を制限するものではない。
本発明の他の実施形態について、図7に基づいて説明すると以下の通りである。
本発明のさらに他の実施形態について、図8に基づいて説明すると以下の通りである。
本発明のさらに他の実施形態について、図9に基づいて説明すると以下の通りである。
Claims (24)
- 被熱交換体と接触する導電性の接触部材と、
該接触部材と離間して配され、この離間部分の空気を介して上記接触部材へ電子を付与する電子放出素子とを備えた熱交換装置であって、
上記電子放出素子は、
電極基板と、薄膜電極と、電極基板と薄膜電極との間に電圧を印加する第一の電圧印加手段と、第一の電圧印加手段による電圧印加によりその内部で電子を加速させて、当該薄膜電極から放出させる電子加速層とを備え、
上記電子加速層は、少なくとも一部が絶縁体で構成されていることを特徴とする熱交換装置。 - 上記電子加速層には、
周囲に第一の誘電体物質が存在する導電体からなる導電微粒子と、
上記導電微粒子の大きさよりも大きい第二の誘電体物質と、
が含まれることを特徴とする請求項1に記載の熱交換装置。 - 上記導電微粒子を成す導電体は、金、銀、白金、ニッケル、及びパラジウムのうちの少なくとも1つを含んでいることを特徴とする請求項2に記載の熱交換装置。
- 上記第一の誘電体物質は、アルコラート、脂肪酸、及びアルカンチオールのうちの少なくとも1つを含んでいること特徴とする請求項2に記載の熱交換装置。
- 上記第二の誘電体物質は、SiO2、Al2O3、及びTiO2のうちの少なくとも1つを含んでいる、または有機ポリマーを含んでいることを特徴とする請求項2~4の何れか1項に記載の熱交換装置。
- 上記薄膜電極は、金、炭素、ニッケル、チタン、及びアルミニウムのうちの少なくとも1つを含んでいることを特徴とする請求項1~5の何れか1項に記載の熱交換装置。
- 上記第一の誘電体物質は、上記導電微粒子を被膜する被膜物質であり、当該被膜物質は、上記導電微粒子の平均径より小さい膜厚で被膜しており、
上記第二の誘電体物質は、上記被膜物質により誘電被膜された導電微粒子の平均径より大きい平均径の微粒子であることを特徴とする請求項2~6の何れか1項に記載の熱交換装置。 - 上記第一の誘電体物質は、上記導電微粒子を被膜する被膜物質であり、当該被膜物質は、上記導電微粒子の平均径より小さい膜厚で皮膜しており、
上記第二の誘電体物質は、シート状で上記電極基板に積層されており、かつ、積層方向に貫通する複数の開口部を有しており、
上記開口部には、上記被膜物質により誘電被膜された導電微粒子が収容されていることを特徴とする請求項2~6の何れか1項に記載の熱交換装置。 - 上記第二の誘電体物質である微粒子の平均径は、30~1000nmであることを特徴とする請求項7に記載の熱交換装置。
- 上記誘電被膜された導電微粒子の平均径は、10nm以下であることを特徴とする請求項7~9の何れか1項に記載の熱交換装置。
- 上記電子加速層における第二の誘電体物質の割合が、重量比で80~95w%であることを特徴とする請求項2~10の何れか1項に記載の熱交換装置。
- 上記電子加速層の層厚は、30~1000nmであることを特徴とする請求項2~11の何れか1項に記載の熱交換装置。
- 上記被熱交換体として発熱体を冷却する冷却装置であることを特徴とする請求項1~12の何れか1項に記載の熱交換装置。
- 上記接触部材は、上記電子放出素子との対向面に凹凸部が形成されたヒートシンクであることを特徴とする請求項1~13の何れか1項に記載の熱交換装置。
- 上記電子放出素子は、大気圧中で気流を発生させるようになっていることを特徴とする請求項1~14の何れか1項に記載の熱交換装置。
- 平面状または曲面状の基材をさらに備え、
上記電子放出素子は、上記基材に形成されていることを特徴とする請求項1~15の何れか1項に記載の熱交換装置。 - 上記電子放出素子は、可撓性を有していることを特徴とする請求項1~15の何れか1項に記載の熱交換装置。
- 上記接触部材に対向して配された羽を有し、該羽の回転により空気流を上記接触部材へ送風する回転羽式空気流発生器を備え、
上記羽における接触部材と対向する面に、上記電子放出素子が設けられていることを特徴とする請求項1~17の何れか1項に記載の熱交換装置。 - 上記電子放出素子は、メッシュ構造になっていることを特徴とする請求項1~18の何れか1項に記載の熱交換装置。
- 上記接触部材と上記電子放出素子との間に電圧を印加する第二の電圧印加手段と備え、
上記第二の電圧印加手段により印加される電圧が、0Vよりも大きく、+10kV以下であることを特徴とする請求項1~19の何れか1項に記載の熱交換装置。 - 上記接触部材と上記電子放出素子との間に発生する電界の電界強度が、1V/m~107V/mであることを特徴とする請求項20に記載の熱交換装置。
- 上記接触部材は、アースに接続されていることを特徴とする請求項1~21の何れか1項に記載の熱交換装置。
- 上記接触部材は、上記電子放出素子における薄膜電極の電子放出面に対し、0°~90°の角度で配置されていることを特徴とする請求項1~22の何れか1項に記載の熱交換装置。
- 上記接触部材と上記電子放出素子との離間距離が、100μm~50cmであることを特徴とする請求項1~23の何れか1項に記載の熱交換装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200980105968.8A CN101953241B (zh) | 2008-02-21 | 2009-02-19 | 热交换装置 |
US12/867,930 US20100307724A1 (en) | 2008-02-21 | 2009-02-19 | Heat exchanger |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008040339A JP4314307B1 (ja) | 2008-02-21 | 2008-02-21 | 熱交換装置 |
JP2008-040339 | 2008-02-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009104684A1 true WO2009104684A1 (ja) | 2009-08-27 |
Family
ID=40985562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/052904 WO2009104684A1 (ja) | 2008-02-21 | 2009-02-19 | 熱交換装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20100307724A1 (ja) |
JP (1) | JP4314307B1 (ja) |
CN (1) | CN101953241B (ja) |
WO (1) | WO2009104684A1 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10260149A1 (de) * | 2002-12-20 | 2004-07-01 | BSH Bosch und Siemens Hausgeräte GmbH | Vorrichtung zur Bestimmung des Leitwertes von Wäsche, Wäschetrockner und Verfahren zur Verhinderung von Schichtbildung auf Elektroden |
JP4303308B2 (ja) | 2007-11-20 | 2009-07-29 | シャープ株式会社 | 電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、電子線硬化装置、および電子放出素子の製造方法 |
US8299700B2 (en) * | 2009-02-05 | 2012-10-30 | Sharp Kabushiki Kaisha | Electron emitting element having an electron acceleration layer, electron emitting device, light emitting device, image display device, cooling device, and charging device |
CN101814405B (zh) | 2009-02-24 | 2012-04-25 | 夏普株式会社 | 电子发射元件及其制造方法、使用电子发射元件的各装置 |
JP4777448B2 (ja) | 2009-05-19 | 2011-09-21 | シャープ株式会社 | 電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、及び電子線硬化装置 |
JP4732534B2 (ja) | 2009-05-19 | 2011-07-27 | シャープ株式会社 | 電子放出素子、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置 |
JP4732533B2 (ja) | 2009-05-19 | 2011-07-27 | シャープ株式会社 | 電子放出素子及びその製造方法、並びに、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置 |
JP5073721B2 (ja) * | 2009-05-19 | 2012-11-14 | シャープ株式会社 | 電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、電子線硬化装置、電子放出素子の製造方法 |
JP4932873B2 (ja) | 2009-05-19 | 2012-05-16 | シャープ株式会社 | 自発光素子、自発光装置、画像表示装置、自発光素子駆動方法、および自発光素子の製造方法 |
CN101930884B (zh) | 2009-06-25 | 2012-04-18 | 夏普株式会社 | 电子发射元件及其制造方法、电子发射装置、自发光设备、图像显示装置 |
JP4927152B2 (ja) * | 2009-11-09 | 2012-05-09 | シャープ株式会社 | 熱交換装置 |
JP4880740B2 (ja) | 2009-12-01 | 2012-02-22 | シャープ株式会社 | 電子放出素子及びその製造方法、並びに、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置 |
JP5756728B2 (ja) * | 2011-09-30 | 2015-07-29 | シャープ株式会社 | 熱交換装置およびその用途 |
JP2014183175A (ja) * | 2013-03-19 | 2014-09-29 | Toshiba Corp | 放熱器 |
JP6267504B2 (ja) * | 2013-12-12 | 2018-01-24 | シャープ株式会社 | 電子放出装置 |
WO2016041581A1 (en) * | 2014-09-16 | 2016-03-24 | Huawei Technologies Co., Ltd | Method, device and system for cooling |
JP6454660B2 (ja) * | 2016-05-30 | 2019-01-16 | パナソニック株式会社 | 溶媒分離方法、および溶媒分離装置 |
JP6820032B2 (ja) * | 2017-12-28 | 2021-01-27 | 国際環境開発株式会社 | 発熱装置及びその用途 |
ES2726228B2 (es) * | 2018-04-02 | 2020-03-19 | Cedrion Consultoria Tecnica E Ingenieria Sl | Disipador de Calor Electro-Hidro-Dinámico |
JP7236235B2 (ja) * | 2018-10-03 | 2023-03-09 | 日産自動車株式会社 | 冷却装置 |
CN110794595A (zh) * | 2019-11-28 | 2020-02-14 | 华中科技大学 | 一种球形颗粒填充液晶的近场辐射热调整器 |
CN113410653B (zh) * | 2021-06-02 | 2022-10-11 | 杭州电子科技大学 | 大型单口径射电望远镜及其提升指向误差的方法 |
EP4132246A1 (en) * | 2021-07-23 | 2023-02-08 | Eaton Intelligent Power Limited | Corona discharge powered cooling |
WO2023156804A1 (ja) * | 2022-02-15 | 2023-08-24 | 日産自動車株式会社 | 冷却装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01298623A (ja) * | 1988-05-26 | 1989-12-01 | Canon Inc | Mim形電子放出素子 |
JPH0897582A (ja) * | 1994-09-29 | 1996-04-12 | Sanyo Electric Co Ltd | 冷却装置 |
JPH09252068A (ja) * | 1996-03-15 | 1997-09-22 | Yaskawa Electric Corp | イオン風冷却装置 |
JP2002093310A (ja) * | 2000-09-08 | 2002-03-29 | Toshiba Corp | 電界放出型電子源および表示装置 |
JP2005190878A (ja) * | 2003-12-26 | 2005-07-14 | Toshiba Corp | スピン偏極エミッタ |
JP2005209396A (ja) * | 2004-01-20 | 2005-08-04 | Toshiba Corp | 電界放射型電子源 |
JP2006100758A (ja) * | 2004-09-22 | 2006-04-13 | Samsung Electro Mech Co Ltd | イオン風を利用した無騒音高効率放熱装置 |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3422263A (en) * | 1963-12-30 | 1969-01-14 | Jiro Asahina | Ionized air producing device |
US3644161A (en) * | 1967-11-13 | 1972-02-22 | Scm Corp | Process for curing air-inhibited resins by radiation |
FR2593953B1 (fr) * | 1986-01-24 | 1988-04-29 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ |
DE3888785T2 (de) * | 1987-05-21 | 1994-11-24 | Matsushita Electric Ind Co Ltd | Staubsammelelektrode. |
US5637544A (en) * | 1991-06-06 | 1997-06-10 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Reactive membrane for filtration and purification of gases of impurities and method utilizing the same |
US6007927A (en) * | 1994-11-15 | 1999-12-28 | Sunstar Giken Kabushiki Kaisha | Organic dispersion-type electroluminescence element having reflective insulating layer eliminating bad effects of impurities from inorganic high dielectric powder |
US5891548A (en) * | 1996-10-03 | 1999-04-06 | Dow Corning Corporation | Encapsulated silica nanoparticles |
JPH10308165A (ja) * | 1997-03-04 | 1998-11-17 | Pioneer Electron Corp | 電子放出素子及びこれを用いた表示装置 |
JPH10308166A (ja) * | 1997-03-04 | 1998-11-17 | Pioneer Electron Corp | 電子放出素子及びこれを用いた表示装置 |
US6130503A (en) * | 1997-03-04 | 2000-10-10 | Pioneer Electronic Corporation | Electron emission device and display using the same |
JP3740295B2 (ja) * | 1997-10-30 | 2006-02-01 | キヤノン株式会社 | カーボンナノチューブデバイス、その製造方法及び電子放出素子 |
JP3203227B2 (ja) * | 1998-02-27 | 2001-08-27 | 三洋電機株式会社 | 表示装置の製造方法 |
JP3595718B2 (ja) * | 1999-03-15 | 2004-12-02 | 株式会社東芝 | 表示素子およびその製造方法 |
JP2000277003A (ja) * | 1999-03-23 | 2000-10-06 | Futaba Corp | 電子放出源の製造方法及び電子放出源 |
US6462467B1 (en) * | 1999-08-11 | 2002-10-08 | Sony Corporation | Method for depositing a resistive material in a field emission cathode |
JP3874396B2 (ja) * | 2000-01-13 | 2007-01-31 | パイオニア株式会社 | 電子放出素子及びその製造方法並びに電子放出素子を用いた表示装置 |
JP3530800B2 (ja) * | 2000-05-08 | 2004-05-24 | キヤノン株式会社 | 電子源形成用基板、該基板を用いた電子源並びに画像表示装置 |
JP3548498B2 (ja) * | 2000-05-08 | 2004-07-28 | キヤノン株式会社 | 電子源形成用基板、該基板を用いた電子源並びに画像表示装置 |
JP3658342B2 (ja) * | 2000-05-30 | 2005-06-08 | キヤノン株式会社 | 電子放出素子、電子源及び画像形成装置、並びにテレビジョン放送表示装置 |
US6844664B2 (en) * | 2001-04-24 | 2005-01-18 | Matsushita Electric Works, Ltd. | Field emission electron source and production method thereof |
US6720717B2 (en) * | 2001-09-25 | 2004-04-13 | Matsushita Electric Works, Ltd. | Field emission-type electron source |
JP3613792B2 (ja) * | 2001-10-01 | 2005-01-26 | 独立行政法人科学技術振興機構 | 固体自発光表示装置及びその製造方法 |
TWI278696B (en) * | 2002-09-10 | 2007-04-11 | Obayashiseikou Co Ltd | Active matrix type vertically aligned mode liquid crystal display and driving method thereof |
JP4248848B2 (ja) * | 2002-11-12 | 2009-04-02 | 奇美電子股▲ふん▼有限公司 | 液晶表示セルおよび液晶ディスプレイ |
JP4336133B2 (ja) * | 2003-03-27 | 2009-09-30 | 学校法人東海大学 | ナノシリコン発光素子の製造法 |
JP4219724B2 (ja) * | 2003-04-08 | 2009-02-04 | 三菱電機株式会社 | 冷陰極発光素子の製造方法 |
JP4216112B2 (ja) * | 2003-04-21 | 2009-01-28 | シャープ株式会社 | 電子放出素子およびそれを用いた画像形成装置 |
JP2005005205A (ja) * | 2003-06-13 | 2005-01-06 | Sharp Corp | 電子放出装置、帯電装置および帯電方法 |
JPWO2005004545A1 (ja) * | 2003-07-02 | 2006-08-17 | 松下電器産業株式会社 | 発光素子及び表示デバイス |
US7898160B2 (en) * | 2003-11-25 | 2011-03-01 | Panasonic Electric Works Co., Ltd. | Method and apparatus for modifying object with electrons generated from cold cathode electron emitter |
JP2005260040A (ja) * | 2004-02-12 | 2005-09-22 | Sony Corp | ドーピング方法、半導体装置の製造方法および電子応用装置の製造方法 |
JP4184306B2 (ja) * | 2004-03-18 | 2008-11-19 | パイオニア株式会社 | 電子放出素子 |
US7482739B2 (en) * | 2004-07-15 | 2009-01-27 | Ngk Insulators, Ltd. | Electron emitter comprised of dielectric material mixed with metal |
JP2006107746A (ja) * | 2004-09-30 | 2006-04-20 | Hitachi Ltd | 画像表示装置 |
JP2006278318A (ja) * | 2005-03-25 | 2006-10-12 | Ngk Insulators Ltd | 光源 |
KR100697656B1 (ko) * | 2005-04-28 | 2007-03-22 | 이승호 | 다중 전자 공급원을 구비한 평면 발광 소자 |
KR100695111B1 (ko) * | 2005-06-18 | 2007-03-14 | 삼성에스디아이 주식회사 | 강유전체 냉음극 및 이를 구비한 강유전체 전계방출소자 |
JP5053524B2 (ja) * | 2005-06-23 | 2012-10-17 | 日本碍子株式会社 | 電子放出素子 |
JP4644148B2 (ja) * | 2006-03-10 | 2011-03-02 | 株式会社日立製作所 | 画像表示装置 |
JP5004484B2 (ja) * | 2006-03-23 | 2012-08-22 | 日本碍子株式会社 | 誘電体デバイス |
US20080302514A1 (en) * | 2007-06-09 | 2008-12-11 | Chien Ouyang | Plasma cooling heat sink |
US8299700B2 (en) * | 2009-02-05 | 2012-10-30 | Sharp Kabushiki Kaisha | Electron emitting element having an electron acceleration layer, electron emitting device, light emitting device, image display device, cooling device, and charging device |
CN101814405B (zh) * | 2009-02-24 | 2012-04-25 | 夏普株式会社 | 电子发射元件及其制造方法、使用电子发射元件的各装置 |
JP5073721B2 (ja) * | 2009-05-19 | 2012-11-14 | シャープ株式会社 | 電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、電子線硬化装置、電子放出素子の製造方法 |
JP4732533B2 (ja) * | 2009-05-19 | 2011-07-27 | シャープ株式会社 | 電子放出素子及びその製造方法、並びに、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置 |
JP4777448B2 (ja) * | 2009-05-19 | 2011-09-21 | シャープ株式会社 | 電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、及び電子線硬化装置 |
JP4732534B2 (ja) * | 2009-05-19 | 2011-07-27 | シャープ株式会社 | 電子放出素子、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置 |
JP4932873B2 (ja) * | 2009-05-19 | 2012-05-16 | シャープ株式会社 | 自発光素子、自発光装置、画像表示装置、自発光素子駆動方法、および自発光素子の製造方法 |
CN101930884B (zh) * | 2009-06-25 | 2012-04-18 | 夏普株式会社 | 电子发射元件及其制造方法、电子发射装置、自发光设备、图像显示装置 |
JP4927152B2 (ja) * | 2009-11-09 | 2012-05-09 | シャープ株式会社 | 熱交換装置 |
US8139354B2 (en) * | 2010-05-27 | 2012-03-20 | International Business Machines Corporation | Independently operable ionic air moving devices for zonal control of air flow through a chassis |
-
2008
- 2008-02-21 JP JP2008040339A patent/JP4314307B1/ja active Active
-
2009
- 2009-02-19 CN CN200980105968.8A patent/CN101953241B/zh not_active Expired - Fee Related
- 2009-02-19 WO PCT/JP2009/052904 patent/WO2009104684A1/ja active Application Filing
- 2009-02-19 US US12/867,930 patent/US20100307724A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01298623A (ja) * | 1988-05-26 | 1989-12-01 | Canon Inc | Mim形電子放出素子 |
JPH0897582A (ja) * | 1994-09-29 | 1996-04-12 | Sanyo Electric Co Ltd | 冷却装置 |
JPH09252068A (ja) * | 1996-03-15 | 1997-09-22 | Yaskawa Electric Corp | イオン風冷却装置 |
JP2002093310A (ja) * | 2000-09-08 | 2002-03-29 | Toshiba Corp | 電界放出型電子源および表示装置 |
JP2005190878A (ja) * | 2003-12-26 | 2005-07-14 | Toshiba Corp | スピン偏極エミッタ |
JP2005209396A (ja) * | 2004-01-20 | 2005-08-04 | Toshiba Corp | 電界放射型電子源 |
JP2006100758A (ja) * | 2004-09-22 | 2006-04-13 | Samsung Electro Mech Co Ltd | イオン風を利用した無騒音高効率放熱装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101953241A (zh) | 2011-01-19 |
JP2009200252A (ja) | 2009-09-03 |
US20100307724A1 (en) | 2010-12-09 |
JP4314307B1 (ja) | 2009-08-12 |
CN101953241B (zh) | 2012-11-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4314307B1 (ja) | 熱交換装置 | |
US7661468B2 (en) | Electro-hydrodynamic gas flow cooling system | |
JP4990380B2 (ja) | 電子放出素子及びその製造方法 | |
US8547007B2 (en) | Electron emitting element, electron emitting device, light emitting device, image display device, air blowing device, cooling device, charging device, image forming apparatus, electron-beam curing device, and method for producing electron emitting element | |
US8610160B2 (en) | Cooling unit using ionic wind and LED lighting unit including the cooling unit | |
JP4927152B2 (ja) | 熱交換装置 | |
JP6247846B2 (ja) | 電子放出素子 | |
JP2016136485A (ja) | 電子放出素子、及び電子放出装置 | |
TW200924853A (en) | Electrostatic atomizer and heated air blower comprising the same | |
JP5756728B2 (ja) | 熱交換装置およびその用途 | |
JP5784354B2 (ja) | 電子放出素子およびそれを備えた電子放出装置 | |
JP6227401B2 (ja) | 電子放出素子および電子放出装置 | |
JP6008594B2 (ja) | 電子放出素子およびそれを備えた装置 | |
JP2019117687A (ja) | 冷却器 | |
JP5981197B2 (ja) | イオン発生装置 | |
JP2020012618A (ja) | 熱交換器 | |
JP4997309B2 (ja) | 電子放出素子およびその製造方法 | |
CN116207619A (zh) | 一种电子束电离式离子风装置 | |
JP2010238470A (ja) | Mim型電子放出素子およびmim型電子放出装置 | |
KR20120058136A (ko) | 금속-탄소 나노튜브 복합 분말, 금속-탄소 나노튜브 복합 페이스트 및 그를 이용한 전계방출 소자 | |
JPWO2012077558A1 (ja) | 電子放出素子、電子放出装置、帯電装置、画像形成装置、電子線硬化装置自発光デバイス、画像表示装置、送風装置、冷却装置、および電子放出素子の製造方法 | |
JP2012054061A (ja) | 電子放出素子及びその製造方法並びに電子放出装置 | |
JP2008288158A (ja) | 静電気除去装置 | |
JP2012069349A (ja) | 電子放出素子、電子放出装置、自発光デバイス、送風装置、冷却装置、電子放出素子の製造方法 | |
JP2010272209A (ja) | 電子放出素子及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980105968.8 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09712045 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12867930 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09712045 Country of ref document: EP Kind code of ref document: A1 |