WO2008123010A1 - 発光素子およびその製造方法ならびに光学素子およびその製造方法 - Google Patents

発光素子およびその製造方法ならびに光学素子およびその製造方法 Download PDF

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Publication number
WO2008123010A1
WO2008123010A1 PCT/JP2008/000450 JP2008000450W WO2008123010A1 WO 2008123010 A1 WO2008123010 A1 WO 2008123010A1 JP 2008000450 W JP2008000450 W JP 2008000450W WO 2008123010 A1 WO2008123010 A1 WO 2008123010A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
manufacturing
emitting element
optical element
led element
Prior art date
Application number
PCT/JP2008/000450
Other languages
English (en)
French (fr)
Inventor
Yoshihisa Usami
Masasuke Takahashi
Tetsuya Watanabe
Original Assignee
Fujifilm Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corporation filed Critical Fujifilm Corporation
Priority to EP08720336.0A priority Critical patent/EP2120272A4/en
Priority to US12/529,984 priority patent/US8710524B2/en
Priority to KR1020097017645A priority patent/KR101339751B1/ko
Priority to CN2008800071438A priority patent/CN101622725B/zh
Publication of WO2008123010A1 publication Critical patent/WO2008123010A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Abstract

発光面の表面に簡易に微細な凹凸形状を形成して発光素子の発光効率を向上させる。発光体として例えばＬＥＤ素子１０を用意し、このＬＥＤ素子１０の発光面１８にヒートモードの形状変化が可能な記録材料層１２を形成する。そして、記録材料層１２に、集光した光を照射することで、ＬＥＤ素子１０が発する光の中心波長の０．０１～１００倍のピッチで複数の凹部１５を形成する。
PCT/JP2008/000450 2007-03-05 2008-03-05 発光素子およびその製造方法ならびに光学素子およびその製造方法 WO2008123010A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08720336.0A EP2120272A4 (en) 2007-03-05 2008-03-05 LIGHT-EMITTING ELEMENT, PROCESS FOR PREPARING THE LIGHT-EMITTING ELEMENT, OPTICAL ELEMENT AND METHOD FOR PRODUCING THE OPTICAL ELEMENT
US12/529,984 US8710524B2 (en) 2007-03-05 2008-03-05 Light emitting element, method for manufacturing the light emitting element, optical element and method for manufacturing the optical element
KR1020097017645A KR101339751B1 (ko) 2007-03-05 2008-03-05 발광 소자와 그 제조 방법 및 광학 소자와 그 제조 방법
CN2008800071438A CN101622725B (zh) 2007-03-05 2008-03-05 发光元件及其制造方法以及光学元件及其制造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007054289 2007-03-05
JP2007-054289 2007-03-05
JP2007196756A JP5078488B2 (ja) 2007-03-05 2007-07-27 発光素子およびその製造方法ならびに光学素子およびその製造方法
JP2007-196756 2007-07-27

Publications (1)

Publication Number Publication Date
WO2008123010A1 true WO2008123010A1 (ja) 2008-10-16

Family

ID=39830515

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000450 WO2008123010A1 (ja) 2007-03-05 2008-03-05 発光素子およびその製造方法ならびに光学素子およびその製造方法

Country Status (7)

Country Link
US (1) US8710524B2 (ja)
EP (1) EP2120272A4 (ja)
JP (1) JP5078488B2 (ja)
KR (1) KR101339751B1 (ja)
CN (1) CN101622725B (ja)
TW (1) TWI426623B (ja)
WO (1) WO2008123010A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010177586A (ja) * 2009-01-30 2010-08-12 Fujifilm Corp 発光素子及びその製造方法
JP5261218B2 (ja) * 2009-02-04 2013-08-14 富士フイルム株式会社 微粒子及びその製造方法
JP2010202497A (ja) 2009-02-04 2010-09-16 Fujifilm Corp 熱線反射膜、並びに熱線反射構造体及びその製造方法
JP2010186723A (ja) 2009-02-13 2010-08-26 Fujifilm Corp 有機ｅｌ装置及びその製造方法
JP2012135767A (ja) * 2009-04-07 2012-07-19 Fujifilm Corp 被加工物の加工方法
GR1008582B (el) * 2014-07-31 2015-10-06 Ιδρυμα Τεχνολογιας Και Ερευνας (Ιτε), Διαμορφωσεις αποδομησης υποστρωματος sic και κατασκευη συσκευων διοδων εκπομπης φωτος
CN106287554B (zh) * 2016-08-18 2019-06-11 长兴金诺机械有限公司 一种图案可变的全彩变色灯

Citations (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE350399C (de) 1919-09-19 1922-03-20 Qu Bernd Ziemert Projektionsschirm
JPS58175693A (ja) 1982-04-08 1983-10-14 Ricoh Co Ltd 高密度光情報記録媒体
JPS5981194A (ja) 1982-11-01 1984-05-10 Tdk Corp 光記録媒体
JPS6018387A (ja) 1983-07-11 1985-01-30 Tdk Corp 光記録媒体
JPS6019586A (ja) 1983-07-13 1985-01-31 Tdk Corp 光記録媒体
JPS6019587A (ja) 1983-07-13 1985-01-31 Tdk Corp 光記録媒体
JPS6035054A (ja) 1983-08-05 1985-02-22 Tdk Corp 光記録媒体
JPS6036191A (ja) 1983-08-09 1985-02-25 Tdk Corp 光記録媒体
JPS6036190A (ja) 1983-08-09 1985-02-25 Tdk Corp 光記録媒体
JPS6044555A (ja) 1983-08-20 1985-03-09 Tdk Corp 光記録媒体
JPS6044554A (ja) 1983-08-20 1985-03-09 Tdk Corp 光記録媒体
JPS6044389A (ja) 1983-08-23 1985-03-09 Tdk Corp 光記録媒体
JPS6044390A (ja) 1983-08-23 1985-03-09 Tdk Corp 光記録媒体
JPS6047069A (ja) 1983-08-24 1985-03-14 Tdk Corp 光記録媒体
JPS6054892A (ja) 1983-09-05 1985-03-29 Tdk Corp 光記録媒体
JPS63209995A (ja) 1987-02-27 1988-08-31 Fuji Photo Film Co Ltd 光学的情報記録媒体
JPH0138680B2 (ja) 1982-09-27 1989-08-15 Tdk Electronics Co Ltd
JPH0425492A (ja) 1990-05-21 1992-01-29 Tdk Corp 光記録媒体
JPH0474690A (ja) 1990-07-17 1992-03-10 Ricoh Co Ltd 光情報記録媒体
JPH0626028B2 (ja) 1984-02-06 1994-04-06 株式会社リコー 光情報記録媒体
JPH08127174A (ja) 1994-10-31 1996-05-21 Sony Corp 光記録媒体
JPH1153758A (ja) 1997-07-30 1999-02-26 Mitsubishi Chem Corp 記録再生方法
JPH11334207A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JPH11334206A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JPH11334204A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JPH11334205A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JP2000043423A (ja) 1998-05-27 2000-02-15 Mitsubishi Chemicals Corp 光学記録媒体
JP2000108513A (ja) 1998-10-05 2000-04-18 Mitsui Chemicals Inc 光記録媒体
JP2000158818A (ja) 1998-12-01 2000-06-13 Mitsui Chemicals Inc 光記録媒体
JP3096239B2 (ja) 1996-04-01 2000-10-10 太陽誘電株式会社 光ディスクのランニングｏｐｃ方法及び光ディスク記録再生装置
JP2003046117A (ja) * 2001-07-30 2003-02-14 Kyocera Corp 半導体発光素子の製造方法
JP2003124373A (ja) * 2001-10-10 2003-04-25 Mitsui Chemicals Inc 樹脂基板の製造方法
JP2003174191A (ja) 2001-06-25 2003-06-20 Toshiba Corp 半導体発光素子及びその製造方法
JP2003203348A (ja) 2001-10-31 2003-07-18 Yamaha Corp 光ディスク記録装置および画像形成方法
JP2003209283A (ja) 2002-01-15 2003-07-25 Toshiba Corp 半導体発光素子及びその製造方法
JP2005203737A (ja) * 2003-12-19 2005-07-28 Nitto Denko Corp 半導体発光素子の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1462618A (en) * 1973-05-10 1977-01-26 Secretary Industry Brit Reducing the reflectance of surfaces to radiation
US6777871B2 (en) * 2000-03-31 2004-08-17 General Electric Company Organic electroluminescent devices with enhanced light extraction
JP4076739B2 (ja) * 2001-06-13 2008-04-16 富士フイルム株式会社 光記録媒体
TW564584B (en) * 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
JP4124102B2 (ja) * 2003-11-12 2008-07-23 松下電工株式会社 多重反射防止構造を備えた発光素子とその製造方法
US7189591B2 (en) * 2003-12-19 2007-03-13 Nitto Denko Corporation Process for producing light-emitting semiconductor device
TWI241038B (en) * 2004-09-14 2005-10-01 Ind Tech Res Inst Light emitting diode structure and fabrication method thereof
US20060189013A1 (en) * 2005-02-24 2006-08-24 3M Innovative Properties Company Method of making LED encapsulant with undulating surface
JP2006253172A (ja) * 2005-03-08 2006-09-21 Toshiba Corp 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法

Patent Citations (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE350399C (de) 1919-09-19 1922-03-20 Qu Bernd Ziemert Projektionsschirm
JPS58175693A (ja) 1982-04-08 1983-10-14 Ricoh Co Ltd 高密度光情報記録媒体
JPH0138680B2 (ja) 1982-09-27 1989-08-15 Tdk Electronics Co Ltd
JPS5981194A (ja) 1982-11-01 1984-05-10 Tdk Corp 光記録媒体
JPS6018387A (ja) 1983-07-11 1985-01-30 Tdk Corp 光記録媒体
JPS6019586A (ja) 1983-07-13 1985-01-31 Tdk Corp 光記録媒体
JPS6019587A (ja) 1983-07-13 1985-01-31 Tdk Corp 光記録媒体
JPS6035054A (ja) 1983-08-05 1985-02-22 Tdk Corp 光記録媒体
JPS6036190A (ja) 1983-08-09 1985-02-25 Tdk Corp 光記録媒体
JPS6036191A (ja) 1983-08-09 1985-02-25 Tdk Corp 光記録媒体
JPS6044555A (ja) 1983-08-20 1985-03-09 Tdk Corp 光記録媒体
JPS6044554A (ja) 1983-08-20 1985-03-09 Tdk Corp 光記録媒体
JPS6044389A (ja) 1983-08-23 1985-03-09 Tdk Corp 光記録媒体
JPS6044390A (ja) 1983-08-23 1985-03-09 Tdk Corp 光記録媒体
JPS6047069A (ja) 1983-08-24 1985-03-14 Tdk Corp 光記録媒体
JPS6054892A (ja) 1983-09-05 1985-03-29 Tdk Corp 光記録媒体
JPH0626028B2 (ja) 1984-02-06 1994-04-06 株式会社リコー 光情報記録媒体
JPS63209995A (ja) 1987-02-27 1988-08-31 Fuji Photo Film Co Ltd 光学的情報記録媒体
JPH0425492A (ja) 1990-05-21 1992-01-29 Tdk Corp 光記録媒体
JPH0474690A (ja) 1990-07-17 1992-03-10 Ricoh Co Ltd 光情報記録媒体
JPH08127174A (ja) 1994-10-31 1996-05-21 Sony Corp 光記録媒体
JP3096239B2 (ja) 1996-04-01 2000-10-10 太陽誘電株式会社 光ディスクのランニングｏｐｃ方法及び光ディスク記録再生装置
JPH1153758A (ja) 1997-07-30 1999-02-26 Mitsubishi Chem Corp 記録再生方法
JPH11334207A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JPH11334206A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JPH11334204A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JPH11334205A (ja) 1998-05-27 1999-12-07 Mitsubishi Chemical Corp 光学記録媒体
JP2000043423A (ja) 1998-05-27 2000-02-15 Mitsubishi Chemicals Corp 光学記録媒体
JP2000108513A (ja) 1998-10-05 2000-04-18 Mitsui Chemicals Inc 光記録媒体
JP2000158818A (ja) 1998-12-01 2000-06-13 Mitsui Chemicals Inc 光記録媒体
JP2003174191A (ja) 2001-06-25 2003-06-20 Toshiba Corp 半導体発光素子及びその製造方法
JP2003046117A (ja) * 2001-07-30 2003-02-14 Kyocera Corp 半導体発光素子の製造方法
JP2003124373A (ja) * 2001-10-10 2003-04-25 Mitsui Chemicals Inc 樹脂基板の製造方法
JP2003203348A (ja) 2001-10-31 2003-07-18 Yamaha Corp 光ディスク記録装置および画像形成方法
JP2003209283A (ja) 2002-01-15 2003-07-25 Toshiba Corp 半導体発光素子及びその製造方法
JP2005203737A (ja) * 2003-12-19 2005-07-28 Nitto Denko Corp 半導体発光素子の製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NIPPON KAGAKU KAISHI, October 1992 (1992-10-01), pages 1141
See also references of EP2120272A4 *

Also Published As

Publication number Publication date
EP2120272A4 (en) 2014-03-19
CN101622725B (zh) 2012-08-08
JP2008252056A (ja) 2008-10-16
EP2120272A1 (en) 2009-11-18
US20100090236A1 (en) 2010-04-15
TW200847488A (en) 2008-12-01
JP5078488B2 (ja) 2012-11-21
KR101339751B1 (ko) 2013-12-11
US8710524B2 (en) 2014-04-29
KR20090117882A (ko) 2009-11-13
CN101622725A (zh) 2010-01-06
TWI426623B (zh) 2014-02-11

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