ATE522933T1 - Verbesserungen an elementen, die zum sammeln von licht fähig sind - Google Patents

Verbesserungen an elementen, die zum sammeln von licht fähig sind

Info

Publication number
ATE522933T1
ATE522933T1 AT08864573T AT08864573T ATE522933T1 AT E522933 T1 ATE522933 T1 AT E522933T1 AT 08864573 T AT08864573 T AT 08864573T AT 08864573 T AT08864573 T AT 08864573T AT E522933 T1 ATE522933 T1 AT E522933T1
Authority
AT
Austria
Prior art keywords
capability
items
collecting light
electrode
main face
Prior art date
Application number
AT08864573T
Other languages
English (en)
Inventor
Stephane Auvray
Delphine Dupuy
Nikolas Janke
Original Assignee
Saint Gobain
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39560924&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE522933(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Saint Gobain filed Critical Saint Gobain
Application granted granted Critical
Publication of ATE522933T1 publication Critical patent/ATE522933T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
AT08864573T 2007-12-07 2008-12-02 Verbesserungen an elementen, die zum sammeln von licht fähig sind ATE522933T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0759632A FR2924863B1 (fr) 2007-12-07 2007-12-07 Perfectionnements apportes a des elements capables de collecter de la lumiere.
PCT/FR2008/052187 WO2009080931A1 (fr) 2007-12-07 2008-12-02 Perfectionnements apportes a des elements capables de collecter de la lumiere

Publications (1)

Publication Number Publication Date
ATE522933T1 true ATE522933T1 (de) 2011-09-15

Family

ID=39560924

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08864573T ATE522933T1 (de) 2007-12-07 2008-12-02 Verbesserungen an elementen, die zum sammeln von licht fähig sind

Country Status (11)

Country Link
US (1) US20100300512A1 (de)
EP (1) EP2227829B2 (de)
JP (2) JP2011507224A (de)
KR (1) KR101560640B1 (de)
CN (1) CN101889350B (de)
AT (1) ATE522933T1 (de)
ES (1) ES2372131T3 (de)
FR (1) FR2924863B1 (de)
PL (1) PL2227829T3 (de)
PT (1) PT2227829E (de)
WO (1) WO2009080931A1 (de)

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DE102009028393A1 (de) * 2009-08-10 2011-02-17 Robert Bosch Gmbh Solarzelle
FR2949494B1 (fr) * 2009-08-25 2015-02-13 Avancis Gmbh & Co Kg Dispositif de fixation et procede de montage de modules solaires
WO2011057189A1 (en) * 2009-11-08 2011-05-12 First Solar, Inc. Back contact deposition using water-doped gas mixtures
US20110247687A1 (en) * 2010-04-08 2011-10-13 Minglong Zhang Thin film solar cell and method for making the same
FR2969389A1 (fr) 2010-12-21 2012-06-22 Saint Gobain Substrat conducteur a base de molybdène
KR20120085577A (ko) * 2011-01-24 2012-08-01 엘지이노텍 주식회사 태양전지 및 그의 제조방법
KR101219948B1 (ko) * 2011-01-27 2013-01-21 엘지이노텍 주식회사 태양광 발전장치 및 제조방법
AU2012211217B2 (en) 2011-01-27 2016-01-07 Vitriflex, Inc. An inorganic multilayer stack and methods and compositions relating thereto
FR2977078B1 (fr) * 2011-06-27 2013-06-28 Saint Gobain Substrat conducteur pour cellule photovoltaique
CN103022157A (zh) * 2011-09-20 2013-04-03 吉富新能源科技(上海)有限公司 一种具有透明薄膜太阳能电池的除尘装置
CN103022158A (zh) * 2011-09-28 2013-04-03 吉富新能源科技(上海)有限公司 一种具有薄膜太阳能电池的伸缩门
FR2982422B1 (fr) 2011-11-09 2013-11-15 Saint Gobain Substrat conducteur pour cellule photovoltaique
US9935211B2 (en) 2012-04-25 2018-04-03 Guardian Glass, LLC Back contact structure for photovoltaic devices such as copper-indium-diselenide solar cells
US8809674B2 (en) 2012-04-25 2014-08-19 Guardian Industries Corp. Back electrode configuration for electroplated CIGS photovoltaic devices and methods of making same
US9419151B2 (en) 2012-04-25 2016-08-16 Guardian Industries Corp. High-reflectivity back contact for photovoltaic devices such as copper—indium-diselenide solar cells
US9159850B2 (en) 2012-04-25 2015-10-13 Guardian Industries Corp. Back contact having selenium blocking layer for photovoltaic devices such as copper—indium-diselenide solar cells
US9246025B2 (en) * 2012-04-25 2016-01-26 Guardian Industries Corp. Back contact for photovoltaic devices such as copper-indium-diselenide solar cells
US10546964B2 (en) * 2012-11-15 2020-01-28 Taiwan Semiconductor Manufacturing Co., Ltd. Molybdenum selenide sublayers with controlled thickness in solar cells and methods for forming the same
EP2800145B1 (de) 2013-05-03 2018-11-21 Saint-Gobain Glass France Rückseitenkontaktiertes Substrat für eine Photovoltaikzelle oder ein Photovoltaikmodul
EP2800144A1 (de) 2013-05-03 2014-11-05 Saint-Gobain Glass France Rückseitenkontaktiertes Substrat für eine Photovoltaikzelle oder ein Photovoltaikmodul
EP2800146A1 (de) 2013-05-03 2014-11-05 Saint-Gobain Glass France Rückseitenkontaktiertes Substrat für eine Photovoltaikzelle oder ein Photovoltaikmodul
EP2871681A1 (de) 2013-11-07 2015-05-13 Saint-Gobain Glass France Rückseitenkontaktsubstrat für eine Solarzelle oder Modul
FR3013507B1 (fr) * 2013-11-15 2015-11-20 Saint Gobain Substrat de contact arriere pour cellule photovoltaique
US9739913B2 (en) * 2014-07-11 2017-08-22 Applied Materials, Inc. Extreme ultraviolet capping layer and method of manufacturing and lithography thereof
KR101997661B1 (ko) * 2015-10-27 2019-07-08 주식회사 엘지화학 전도성 구조체, 이를 포함하는 전극 및 디스플레이 장치
DE202015106923U1 (de) 2015-12-18 2016-01-22 Saint-Gobain Glass France Elektronisch leitfähiges Substrat für Photovoltaikzellen
JP7076971B2 (ja) * 2017-09-28 2022-05-30 キヤノン株式会社 撮像装置およびその製造方法ならびに機器
CN111933649B (zh) * 2020-07-22 2024-01-30 中国电子科技集团公司第十三研究所 一种光电探测器及其制作方法

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US4915745A (en) * 1988-09-22 1990-04-10 Atlantic Richfield Company Thin film solar cell and method of making
DE4442824C1 (de) † 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
JP2984595B2 (ja) * 1996-03-01 1999-11-29 キヤノン株式会社 光起電力素子
US5981934A (en) * 1996-09-12 1999-11-09 Canon Kabushiki Kaisha Photovoltaic element having a transparent conductive layer with specified fractal dimension and fractal property
JP3527815B2 (ja) * 1996-11-08 2004-05-17 昭和シェル石油株式会社 薄膜太陽電池の透明導電膜の製造方法
US6951689B1 (en) * 1998-01-21 2005-10-04 Canon Kabushiki Kaisha Substrate with transparent conductive layer, and photovoltaic element
JP2001147424A (ja) * 1999-11-19 2001-05-29 Hitachi Ltd 導電性薄膜形成用の絶縁基板およびこの絶縁基板を用いた液晶表示素子
FR2820241B1 (fr) * 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
JP2003008039A (ja) * 2001-06-26 2003-01-10 Sharp Corp 化合物太陽電池の製造方法
FR2832706B1 (fr) * 2001-11-28 2004-07-23 Saint Gobain Substrat transparent muni d'une electrode
US6626688B1 (en) * 2002-08-22 2003-09-30 International Business Machines Corporation Mechanism for seating and unseating a module having an electrical connector
EP1556902A4 (de) * 2002-09-30 2009-07-29 Miasole Herstellungsvorrichtung und verfahren zur produktion von dünnfilmsolarzellen in grossem massstab
JP4055064B2 (ja) † 2002-10-16 2008-03-05 本田技研工業株式会社 薄膜太陽電池の製造方法
JP2006165386A (ja) * 2004-12-09 2006-06-22 Showa Shell Sekiyu Kk Ｃｉｓ系薄膜太陽電池及びその作製方法
US8389852B2 (en) * 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
US7846750B2 (en) * 2007-06-12 2010-12-07 Guardian Industries Corp. Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell
US8071872B2 (en) * 2007-06-15 2011-12-06 Translucent Inc. Thin film semi-conductor-on-glass solar cell devices
US7888594B2 (en) * 2007-11-20 2011-02-15 Guardian Industries Corp. Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index

Also Published As

Publication number Publication date
FR2924863B1 (fr) 2017-06-16
EP2227829B2 (de) 2015-12-16
WO2009080931A1 (fr) 2009-07-02
KR101560640B1 (ko) 2015-10-16
EP2227829B1 (de) 2011-08-31
PT2227829E (pt) 2011-12-20
CN101889350A (zh) 2010-11-17
CN101889350B (zh) 2013-10-23
US20100300512A1 (en) 2010-12-02
WO2009080931A8 (fr) 2010-06-03
JP2011507224A (ja) 2011-03-03
JP2015039020A (ja) 2015-02-26
ES2372131T3 (es) 2012-01-16
PL2227829T3 (pl) 2012-01-31
EP2227829A1 (de) 2010-09-15
FR2924863A1 (fr) 2009-06-12
KR20100094988A (ko) 2010-08-27

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