WO2008069178A1 - 封止材料及びその封止材料を用いる実装方法 - Google Patents
封止材料及びその封止材料を用いる実装方法 Download PDFInfo
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- WO2008069178A1 WO2008069178A1 PCT/JP2007/073331 JP2007073331W WO2008069178A1 WO 2008069178 A1 WO2008069178 A1 WO 2008069178A1 JP 2007073331 W JP2007073331 W JP 2007073331W WO 2008069178 A1 WO2008069178 A1 WO 2008069178A1
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- sealing material
- temperature
- elastic modulus
- electronic component
- glass transition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/4007—Curing agents not provided for by the groups C08G59/42 - C08G59/66
- C08G59/4014—Nitrogen containing compounds
- C08G59/4021—Ureas; Thioureas; Guanidines; Dicyandiamides
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/10—Materials in mouldable or extrudable form for sealing or packing joints or covers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2200/00—Chemical nature of materials in mouldable or extrudable form for sealing or packing joints or covers
- C09K2200/06—Macromolecular organic compounds, e.g. prepolymers
- C09K2200/0645—Macromolecular organic compounds, e.g. prepolymers obtained otherwise than by reactions involving carbon-to-carbon unsaturated bonds
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2200/00—Chemical nature of materials in mouldable or extrudable form for sealing or packing joints or covers
- C09K2200/06—Macromolecular organic compounds, e.g. prepolymers
- C09K2200/0645—Macromolecular organic compounds, e.g. prepolymers obtained otherwise than by reactions involving carbon-to-carbon unsaturated bonds
- C09K2200/0647—Polyepoxides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2200/00—Chemical nature of materials in mouldable or extrudable form for sealing or packing joints or covers
- C09K2200/06—Macromolecular organic compounds, e.g. prepolymers
- C09K2200/0645—Macromolecular organic compounds, e.g. prepolymers obtained otherwise than by reactions involving carbon-to-carbon unsaturated bonds
- C09K2200/065—Polyurethanes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/582—Recycling of unreacted starting or intermediate materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49718—Repairing
- Y10T29/49721—Repairing with disassembling
- Y10T29/49723—Repairing with disassembling including reconditioning of part
- Y10T29/49725—Repairing with disassembling including reconditioning of part by shaping
- Y10T29/49726—Removing material
Definitions
- the present invention relates to a material for sealing an electrode joint portion of a circuit board on which an electronic component is mounted.
- circuit boards of electronic devices have been required to be mounted with high density in order to reduce the size, weight, performance, and speed of electronic devices.
- semiconductor devices including electronic components and chip components mounted on circuit boards, CSP (chip size package) ICs, and the like are also being reduced in size, thickness, speed, and number of terminals.
- CSP chip size package
- the mechanical strength of electronic components and / or semiconductor devices themselves is decreasing, and those that are more vulnerable to mechanical stress and temperature changes applied to them are increasing.
- the cost per electronic component and / or semiconductor device, as well as the cost per circuit board on which electronic components are mounted has increased.
- the electronic component and / or semiconductor device are arranged at predetermined positions on the circuit board so that the corresponding electrodes are in contact with each other.
- Solder material or conductive adhesive is supplied between the electrodes to be connected, and this is put into a reflow furnace or the like to join the electrodes of the electronic component and / or semiconductor device and the circuit board, and further the joining.
- a method of sealing between the electronic component and / or the semiconductor device and the circuit board including the periphery of the joint portion with a resin is generally performed.
- This resin sealing is used for adhering and fixing electronic components and / or semiconductor devices to circuit boards, even when exposed to high-temperature and high-humidity environments after heat cycles, and for electronic components and / or semiconductors. This is important to protect the joint between the device and circuit board with high reliability.
- an electronic component adhesive member with a low elastic modulus is used between the electronic component and the wiring board.
- An invention for relieving thermal stress is disclosed in Patent Document 1 (particularly paragraph No. 0032).
- Patent Document 1 there is a difference between the thermal expansion coefficient of a semiconductor chip and the thermal expansion coefficient of a circuit board.
- the low elastic modulus electronic component according to the invention adhesive member It is disclosed that it is effective to use.
- inspections or tests are performed at various assembly stages to find articles that do not meet the required standards.
- the found nonconforming product is excluded from the assembly process.
- products that are certified as conforming products through such inspections are sent to a further assembly process to produce electrical products.
- a circuit board on which electronic components and / or semiconductor devices are mounted hereinafter also referred to as a mounted circuit board
- the costs of the electronic components and / or semiconductor devices and mounted circuit boards are reduced. Because it is expensive, discarding the entire mounted circuit board as it is leads to an increase in the product cost at the end and an increase in the amount of industrial waste. , Which is preferable in terms of giving a load to the environment.
- a mounted circuit board that is regarded as a non-conforming product may have a damaged electronic component and / or semiconductor device for various reasons including thermal history.
- parts and / or semiconductor devices are installed, one or several electronic components and / or semiconductor devices are defective (or nonconforming to the specified standard), but other electronic components If the semiconductor device and / or the circuit board itself are not damaged, only electronic components and / or semiconductor devices that have been certified as defective (or nonconforming product) can be easily removed from the mounted circuit board. Instead, by mounting normal electronic components and / or semiconductor devices, the remaining part of the mounted circuit board can be used effectively.
- Patent Document 2 and Patent Document 3 disclose an invention in which a defective electronic component and / or semiconductor device is repaired and the substrate is reused so that the substrate can be reused.
- Patent Document 4 proposes a method in which an even stronger adhesive is applied to the resin remaining on the circuit board, and heated and removed using a peeling plate. Further, Patent Document 5 proposes a method for removing the resin remaining on the substrate with a grinding cutter.
- Patent Document 1 JP 2000-154361 A
- Patent Document 2 Japanese Patent Laid-Open No. 10-107095
- Patent Document 3 JP-A-10-209342
- Patent Document 4 JP-A-5-109838
- Patent Document 5 JP-A-6-5664
- an electronic component adhesive member having a low elastic modulus is used to relieve the thermal stress generated between the electronic component and the wiring board.
- Inventors of the present application have peeled a weakened electronic component and / or semiconductor device only by preventing cracks if the joints are peeled off when heat and mechanical stress are applied from the outside.
- Various studies were conducted for the purpose of preventing cracks and cracks. As a result, contrary to the invention disclosed in Patent Document 1, rather, the elastic modulus is rather high!
- Patent Document 4 and Patent Document 5 it is necessary to apply a relatively large mechanical stress to the electronic component and / or the semiconductor device when performing the repair operation.
- the rate of damage to the substrate to be recovered during the repair operation was relatively high! /, And! /.
- This application solves the above-described conventional problems, and when mounting a relatively fragile electronic component and / or semiconductor device, the joint and the electronic component and / or semiconductor device are subjected to low stress.
- One object of the present invention is to provide an invention of a sealing material having the property of being able to be sealed with. It is more preferable that the sealing material has a suitable repair property that only electronic components and / or semiconductor devices that are certified as nonconforming products after sealing can be easily repaired.
- Another object of the present application is to provide an invention of a method for mounting an electronic component and / or a semiconductor device by using a sealing material having a characteristic that it can be sealed with low stress. And It is more preferable that the sealing material has suitable repairability.
- This application provides another invention of a mounting structure in which an electronic component and / or a semiconductor device is mounted using a sealing material having a characteristic of being able to be sealed with low stress.
- a sealing material having a characteristic of being able to be sealed with low stress.
- the sealing material has suitable repairability.
- this application is a sealing material comprising at least (a) a thermosetting resin component and (b) a curing agent component thereof, and a glass transition of the cured sealing material.
- the storage elastic modulus (E) is measured while raising the temperature in the temperature range including the point (Tg)
- the ratio of the change in storage elastic modulus ( ⁇ E) to the change in temperature ( ⁇ T) ( ⁇ E / ⁇
- a sealing material characterized by exhibiting a value in the range of 0.5 MPa / ° C to 30 MPa / ° C as T).
- thermosetting resin component can be selected from the group consisting of an epoxy resin composition, a urethane resin composition, a phenol resin composition, and an acrylic resin composition.
- an epoxy resin composition is preferable from the viewpoint of properties such as hygroscopicity, thermal expansion, and curing shrinkage.
- epoxy resin compositions that are generally used can be used for the epoxy resin of the present invention.
- Preferred epoxy resin compositions include difunctional or higher polyfunctional epoxy resins such as bisphenol type epoxy resins (bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AD type epoxy resin), Novo Examples thereof include a rack type epoxy resin (phenol nopolac type epoxy resin, cresol nopolac type epoxy resin), naphthalene type epoxy resin, biphenyl type epoxy resin, and cyclopentagen type epoxy resin. These epoxy resins may be used as a mixture of two or more.
- the epoxy resin can be selected in consideration of viscosity and physical properties, but it is most preferable to include bisphenol A type epoxy resin in the polyfunctional epoxy resin at a rate of 10 to; 100%, especially 50 to 100%. preferable.
- the above epoxy resins further include rubber-modified epoxy resins (polyisoprene-modified epoxy resins, polychloroprene-modified epoxy resins, polybutadiene-modified epoxy resins, etc.), urethane-modified epoxy resins, and dimer acid-modified epoxy resins.
- One or more of the modified epoxy resins selected from the above can be added as appropriate.
- a monofunctional epoxy resin as a reactive diluent component (or a crosslinking density modifier) (preferably all It can be added at a ratio of about weight% in the total epoxy resin).
- a monofunctional epoxy resin a compound having one epoxy group in the molecule and having an alkyl group having 6 to 28 carbon atoms is preferable.
- the alkyl group may have, for example, 8 or more carbon atoms, 10 or more carbon atoms, or 12 or more carbon atoms.
- the carbon number of the alkyl group may be, for example, 26 or less, 24 or less, or 22 or less.
- At least one resin selected from alkyl glycidyl ethers, fatty acid glycidyl esters, and alkylphenol glycidyl ethers having the carbon number in the above range can be used.
- Ricidyl ether is preferred Use a mixture of two or more monofunctional epoxy resins. You can also.
- (d) as the reactive diluent component in addition to this, one or more kinds selected from the group consisting of monoepoxide, geoikido, triepoxide, polyol, polythiol, polycarboxy and urethane Compounds can also be used.
- thermosetting resin component those suitable for curing the (a) thermosetting resin component to be used are used.
- a compound selected from the group consisting of an amine compound, an imidazole compound, a modified amine compound, a modified imidazole compound, a polyphenol compound, and a sulfur-containing compound (b) ) Preferable to use as a curing agent component.
- Examples of the amine compound include aliphatic polyamines such as dicyandiamide, diethylenetriamine, triethylenetetramine, and jetylaminopropylamine, aromatic polyamines such as m-xylenediamine and diaminodiphenylmethane, isophorone diamine, Examples thereof include alicyclic polyamines such as mensendiamine and polyamides.
- imidazole compound examples include 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, and the like.
- Examples of the modified amine compound include an epoxy compound-added polyamine obtained by adding an amine compound to an epoxy compound.
- examples of the modified imidazole compound include an imidazole adduct obtained by adding an imidazole compound to an epoxy compound. Can be mentioned.
- a latent curing agent used for a one-component epoxy resin is preferable.
- a latent curing agent means that even if the latent curing agent is mixed with an epoxy resin, curing does not substantially proceed while a temperature near normal temperature is applied, and the temperature exceeds a predetermined temperature. It is a kind of curing agent in which the progress of curing is recognized only when heated to a temperature.
- modified amine compound-based curing agents are particularly known.
- the modified amine in an amount of 5 to 95% by weight based on the total weight of the curing agent and dicyandiamide in an amount of 95 to 5% by weight based on the total weight of the curing agent.
- the amount of the curing agent is usually 3 to 60 parts by weight with respect to 100 parts by weight of the epoxy resin. And preferably 5 to 40 parts by weight.
- the sealing material of the present invention is a sealing material comprising at least (a) a thermosetting resin component and (b) a curing agent component thereof, which is heated.
- the obtained cured product may have a glass transition temperature (Tg) in a temperature range of 80 ° C or higher and 50 ° C or lower.
- the form of the sealing material of the present invention is such that all the constituent components are mixed before use.
- thermosetting resin component Even if it is a one-component type, before use, (a) a thermosetting resin component and (b) a curing agent component are stored separately and mixed when used. It may be.
- the form of such a sealing material can be determined according to the composition of (a) the thermosetting resin component and (b) the curing agent component, based on the technical level known to those skilled in the art.
- the sealing material of the present invention includes (c) one component of an insulating filler: alumina, silica, alumina, boron nitride, aluminum nitride, silicon nitride, magnesia, magnesium silicate, talc, calcium carbonate, And one or more compounds selected from the group consisting of calcium hydroxide and the like can be used.
- One component of the insulating filler is blended mainly for the purpose of adjusting and / or optimizing viscosity and fluidity.
- One component of the insulating filler is also blended for the purpose of controlling the coefficient of thermal expansion, fluidity, and adhesion.
- the sealing material of the present invention can further contain an additive if desired. Such additives include curing accelerators (polyamines, etc.), dyes, pigments and the like.
- the sealing material of the present invention has the composition as described above, and has a storage elasticity while increasing the temperature in a temperature range including the glass transition point (Tg) of the cured sealing material.
- Tg glass transition point
- the ratio ( ⁇ E / ⁇ T) of the change in storage elastic modulus ( ⁇ E) to the temperature change ( ⁇ T) is 30MPa / ° C or less, and 0.5MPa It is characterized by a value in the range of / ° C or higher.
- the rate of change in storage elastic modulus ( ⁇ / ⁇ ) (hereinafter also referred to as the rate of change in storage elastic modulus in the present specification) is preferably 10 MPa / ° C or less, particularly preferably lMPa / ° C or less. It may be.
- the change rate of the storage elastic modulus may be preferably 20 MPa / ° C or more, for example, 25 MPa / ° C or more.
- a graph with a slope that slowly falls linearly toward the side is obtained.
- the rate of change of the storage modulus can be expressed as a straight line slope! /.
- the sealing material of the present invention when used, the sealing material and the substrate can be separated in a repair operation like so-called interface destruction without causing so-called base material destruction. Therefore, it is possible to recover the substrate and / or the electronic component and / or the semiconductor device without substantially damaging them while sacrificing the sealing material. Thus, the substrate and the like recovered substantially intact can be recycled or reused after being processed as necessary. If the rate of change of storage elastic modulus exceeds 30 MPa / ° C, it will not be possible to sufficiently seal and seal with low stress. On the other hand, if the rate of change in storage elastic modulus is less than 0.5 MPa / ° C, sufficient reliability as a sealing material having elasticity cannot be obtained.
- Fig. 2 is a graph showing the rate of change of storage elastic modulus ( ⁇ E / ⁇ ) with respect to temperature change as described above.
- This graph shows 0.8MPa / in the temperature range including the glass transition temperature (Tg). Show the value of ( ⁇ E / ⁇ ) of the same! /
- the temperature range that includes this glass transition point (Tg) is the temperature range that sandwiches the glass transition point (Tg), and it can be replaced by a temperature lower than the glass transition point (Tg) and the glass transition point. It means a temperature in the range between the temperature higher than (Tg).
- the cured sealing material of the present invention is 80 ° C or higher, and in some cases, for example, 70 ° C or higher, 60 ° C or higher, 50 ° C or higher, 40 ° C or higher, 30 ° C or higher, 20 It preferably has a glass transition point (Tg) of at least 10 ° C and at least 10 ° C. Further, the cured sealing material of the present invention is 100 ° C or lower, and in some cases, for example, 90 ° C or lower, 80 ° C or lower, 70 ° C or lower, 60 ° C or lower, 50 ° C or lower, 40 ° C or lower. Less than 30 ° C, 20 ° C or less, 10 ° C or less, 0 ° C or less It is preferable to have a transition point (Tg)! /.
- the sealing material that covers at least the junction between the circuit board and the electronic component and / or the semiconductor device is used at a practical use temperature. Since a relatively high adhesive strength (for example, 0.5 kg / mm 2 ) is maintained, the joint can be suitably sealed. On the other hand, if the sealing material is sufficiently softened when heated to, for example, about 220 ° C. after sealing, the sealing material adhering to the electronic component and / or the semiconductor device to be repaired is relatively It can be easily separated. Therefore, this sealing material can show suitable repairability after sealing.
- the sealing material of the present invention has an elastic modulus of lOOMPa or higher, preferably an elastic modulus of 500 MPa or higher, more preferably an elastic modulus of 800 MPa or higher, at a temperature T1 lower than the glass transition point (Tg). More preferably, it can be characterized by exhibiting an elastic modulus of 1 GPa or more. Furthermore, the sealing material of the present invention has an elastic modulus of 200 MPa or less, preferably 50 MPa or less, more preferably 1 OMPa or less at a temperature T2 higher than the glass transition point (Tg). It can be characterized by showing. The sealing material of the present invention showing such an elastic modulus in the temperature range lower and higher than the glass transition point (Tg) can exhibit suitable sealing properties.
- the sealing material of the present invention can exhibit suitable repair properties.
- the lower limit temperature (for example, temperature T1) of the temperature range in which the rate of change in storage modulus ( ⁇ E / ⁇ ) with respect to the temperature change is measured is higher than 50 ° C.
- temperature T2 is lower than 200 ° C
- the elastic modulus of the sealing material changes from a value greater than or equal to lOOMPa at the lower temperature T1 to less than or equal to lOMPa at the higher temperature T2.
- the value of change rate of storage elastic modulus ( ⁇ E / ⁇ ) with respect to temperature change is a value that is too larger than the preferred value of the present invention.
- the elastic modulus changes too rapidly near the glass transition point (Tg), so that sealing at low stress cannot be achieved. The possibility of damaging the parts increases.
- the sealing The material can exhibit good repairability at the peeling temperature of the bonding material.
- the sealing material is sufficiently softened at the melting point of the solder material of about 220 ° C. And can be easily peeled off.
- the electronic component and / or the semiconductor device itself can be sealed with low stress simultaneously with the joint. Also, when heated to the temperature at which the bonding material peels, generally the melting point of the bonding material, the sealing material is sufficiently softened and easily peeled off, and the electronic component and / or the semiconductor device can be removed at the same time as the sealing material is removed. .
- An invention of a method for mounting an electronic component on a substrate, comprising sealing between a semiconductor device and / or a semiconductor device by the sealing material according to the first invention of the present application is provided.
- the implementation method is
- This application is also an invention of a method of mounting an electronic component on a substrate.
- a step of disposing an electronic component at a predetermined position on the ⁇ substrate to form a conductive connecting portion (i) supplying a sealing material containing a thermosetting resin composition to the conductive connecting portion and the periphery thereof; Supplying a sealing material having a glass transition temperature (Tg) in a temperature range of 80 ° C. or higher and 50 ° C. or lower after curing;
- Tg glass transition temperature
- an electronic component is disposed at a predetermined position on the circuit board, and a conductive connection portion is formed between corresponding electrodes of the circuit board and the electronic component.
- the A mounting structure in which an electronic component is mounted on a circuit board, wherein the gap around the conductive connection portion and the gap between the electronic component and the circuit board are made of the sealing material of the first invention.
- An invention of a mounting structure that is sealed by use is provided.
- the sealing material according to the first invention of this application when a relatively fragile electronic component and / or semiconductor device is mounted on a circuit board, the joint, electronic component, and On the other hand, it shows the characteristic that the semiconductor device can be sealed with a relatively low stress, while it can show the characteristic (repairability) when it can be repaired properly even after the sealing. . Furthermore, good initial sealing characteristics and durable sealing characteristics can also be exhibited. That is, according to this sealing material, the electronic component and / or the semiconductor device mounted on the circuit board and the electronic component and / or the semiconductor device are sealed on the substrate with a low stress for a relatively long period of time. be able to.
- the damage of the parts and the like in the sealing process and the damage of the parts and the like due to being subjected to the temperature site can be greatly reduced, and the occurrence of the damage can be substantially prevented.
- the cured sealing material that seals the joints and electronic components and / or semiconductor devices is heated to a temperature equal to or higher than the glass transition point (Tg). It has a suitable repair property that it can be removed relatively easily.
- the joint and the electronic component and / or semiconductor device are mounted. Can be performed with relatively low stress. Therefore, it is possible to mount the electronic component and / or the semiconductor device while substantially preventing the damage of the component in the sealing process and the occurrence of the damage of the component due to the temperature cycle. Furthermore, repair can be suitably performed even after sealing.
- the sealing material according to the invention of the present application can maintain a durable seal with low stress even after sealing for a conforming product, while repairing a non-conforming product is relatively easy. It is possible to achieve the seemingly contradictory effect of being able to do it with force S.
- FIG. 1 is a schematic diagram showing a state where a semiconductor chip is mounted on a circuit board.
- FIG. 1 schematically showing a preferred embodiment of the present invention.
- FIG. 1 schematically shows a semiconductor device 1 and a glass epoxy circuit board 6 to which the semiconductor device 1 is to be attached.
- the semiconductor device 1 is provided with solder balls (electrodes) 2, and lands (electrodes) 5 are provided on the circuit board 6 corresponding to the respective electrodes.
- the solder ball (electrode) 2 on the semiconductor device 1 side and the land (electrode) 5 on the circuit board 6 side are Bonded to form an electrical connection.
- a sealing material 4 is applied between the joint portion by solder 3 and the circuit board 6 around the joint portion and the semiconductor device 1, and a seal is formed between the circuit board 6 and the semiconductor device 1 around the joint portion and the periphery thereof. It has been stopped.
- a specific mounting operation was performed as follows. Wiring-thickness 1. 6mm glass Epoxy substrate with cream solder (Senju Metal Industry Co., Ltd., M705-221B M5—K) applied, chip size 13mm XI 3mm package, electrode diameter ( (Diameter) 0.5 mm, electrode pitch 0.8 mm, and CSP whose carrier substrate is alumina was mounted by reflow soldering.
- thermosetting resin composition is applied around the joint between the CSP and the circuit board using a dispenser, and subsequently heated at 80 ° C for 30 minutes, and further heated to 150 ° C.
- the thermosetting resin composition was sufficiently cured by heating for a minute.
- the heated thermosetting resin composition has sufficient fluidity before being cured and penetrates into the gap between the CSP and the circuit board, and the gap is removed. Can be fully charged. Further heating causes the thermosetting resin composition to harden with the insulating filter settling slightly, so the gap between the CSP and the circuit board is also sealed, and the desired CSP mounting structure is formed. Obtained.
- the obtained cured product had a Tg of 40 ° C.
- the initial sealing characteristics were evaluated as follows. Cracks are generated on the surface of the CSP by observing the sealing part by visual observation and / or microscopic observation of the CSP mounting structure in which the thermosetting resin composition is cured and sealing of the joint is completed We examined whether abnormalities such as the above were observed. As a result of testing 10 test samples, no abnormalities were found as ⁇ (passed), and those containing test samples with abnormalities were evaluated as X (failed).
- the glass transition point (Tg) and the storage elastic modulus E ′ of the encapsulating material after curing are measured using a dynamic viscoelasticity measuring device (DVA-200, manufactured by IT Measurement Control Co., Ltd.) Test sample dimensions: Measured under the conditions of a vertical dimension of 20 mm, a lateral dimension of 5 mm, a height dimension of 1 mm, a heating rate of 10 ° C / min, a tensile mode, 10 Hz, and an automatic static load.
- the peak top temperature of the loss modulus E was measured as the glass transition point (Tg).
- Component (a) Bisuf Bisuf Bisuf Bisuf Bisuf
- the repairability of the mounting structure in which the CSP was mounted with the sealing material of the present invention was evaluated. From the 100 CSP mounting structures that have been mounted as described above, the CSP mounting structure Ten structures were randomly extracted, and a heatable suction tool was pressed against the upper surface of the CSP, and the suction tool was heated to 250 ° C for 1 minute. After that, when a metal separation lever (separation jig) was inserted between the CSP and the circuit board and the CSP was lifted, the sealing material was sufficiently softened and the sealing material was easily broken. However, the CSP could be removed easily.
- separation jig separation lever
- the glass epoxy circuit board after removing the CSP is placed on a hot plate and kept at a temperature of about 100 ° C, and a solvent (for example, PS-1 manufactured by Daiichi Kogyo Seiyaku Co., Ltd., 7360 manufactured by Loctite Co., Ltd.) is used.
- a solvent for example, PS-1 manufactured by Daiichi Kogyo Seiyaku Co., Ltd., 7360 manufactured by Loctite Co., Ltd.
- the sealing material left on the glass epoxy circuit board was swollen and scraped with a plastic spatula. Also, the solder material remaining on the glass epoxy circuit board was removed using solder suction / braiding wire.
- Repair operation was performed 10 times for the mounting structure of each example.
- scraping operation of the sealing material with a spatula and removal of the solder material by the braiding wire for sucking the solder The operation was smoothly performed as a series of operations within 5 minutes. Therefore, this repair operation is a sufficiently practical operation.
- repair operation it may be heated using a far infrared heater or the like instead of the operation of placing on a hot plate and keeping the temperature at about 100 ° C.
- Cream solder was applied again on the glass epoxy circuit board from which the CSP was removed in this way, and a new CSP was mounted. At this time, cream solder may be printed on the new CSP side.
- thermosetting resin composition was applied to the periphery of the CSP joint and subjected to heat treatment to cure the thermosetting resin composition to obtain a CSP mounting structure.
- the mounting structure in which the CSP is mounted after being repaired in this way, as well as the mounting structure that has not undergone the repair, is also securely connected and will not be repaired even in the heat shock test. As with the case, excellent characteristics were exhibited.
- thermosetting resin component 100 parts by weight of bisphenol A type epoxy resin as thermosetting resin component, corresponding to this (b) 8 parts by weight of dicyandiamide as curing agent component, (c) 50% average particle as one component of insulating filler 0, 10 parts by weight of an alumina filler with a diameter of 5 ⁇ m, (d) a reactive diluent (crosslinking A sealing material was prepared by mixing 10 parts by weight of an alkyl glycidyl ether as a modifier component and 1 part by weight of a curing accelerator suitable for the combination of the thermosetting resin component and the curing agent component. The viscosity immediately after mixing was 28000 mPa's.
- the obtained sealing material was cured under the sealing operation conditions described above, and the glass transition point (Tg) and the storage elastic modulus E of the cured sealing material were measured.
- the glass transition point (Tg) was -48 ° C.
- the storage elastic modulus E is measured while the temperature is increased from temperature T1 (50 ° C) to temperature T2 (200 ° C), the temperature is plotted on the horizontal axis, and the storage elastic modulus E shown on a logarithmic scale is plotted on the vertical axis.
- a graph that changed to an S-shape as shown in Fig. 2 was obtained.
- the storage elastic modulus E did not change substantially with respect to the temperature change, but the temperature Tl In the temperature range including the glass transition point (Tg) from (50 ° C) to the temperature T2 (200 ° C), there was a relatively large change as shown in the figure.
- Example 2 (a) a bisphenol A type epoxy resin was used as a thermosetting resin component, and (b) a combination of dicyandiamide and a modified amine was used as a curing agent component. (c) One component of the insulating filler and (d) the reactive diluent (crosslinking regulator) component were the same as in Example 1.
- thermosetting resin component a bisphenol F type epoxy resin was used as the thermosetting resin component, and (b) a combination of dicyandiamide and modified amine was used as the curing agent component. (c) One component of the insulating filler and (d) the reactive diluent (crosslinking regulator) component were the same as in Example 1.
- a urethane resin composition was used as (a) a thermosetting resin component and (b) a curing agent component.
- (C) One component of the insulating filler was the same as in Example 1.
- the sealing material of Comparative Example 1 has a glass transition point (Tg) of 150 ° C after curing, and the storage elasticity against temperature change measured near the glass transition point (Tg).
- the rate of change in rate ( ⁇ E / ⁇ T) was 33 MPa / ° C.
- the sealing material of Comparative Example 2 has a glass transition point of 160 ° C after curing.
- the change rate of storage elastic modulus ( ⁇ E / ⁇ T) with respect to temperature change measured near the glass transition point (Tg) was 40 MPa / ° C.
- thermosetting resin component 100 parts by weight of bisphenol A type epoxy resin as thermosetting resin component, corresponding to this (b) 8 parts by weight of dicyandiamide as curing agent component, (c) 50% average particle as one component of insulating filler 0, 10 parts by weight of an alumina filler having a diameter of 5 ⁇ m, (d) 10 parts by weight of alkyl glycidyl ether as a reactive diluent (crosslinking regulator) component, and further suitable for the combination of the thermosetting resin component and the curing agent component
- a sealing material was prepared by mixing 1 part by weight of a curing accelerator. The viscosity immediately after mixing was 28000 mPa's.
- the obtained sealing material was cured under the sealing operation conditions as described above, and the glass transition point (Tg) and the storage elastic modulus E of the cured sealing material were measured.
- the glass transition point (Tg) was 2 ⁇ 8 ° C.
- the storage elastic modulus E was measured while increasing the temperature from the temperature Tl (50 ° C) to the temperature T2 (200 ° C), the temperature was plotted on the horizontal axis, and the storage elastic modulus E indicated on a logarithmic scale was plotted on the vertical axis.
- a graph inflected into an S shape as shown in Fig. 2 was obtained.
- the storage elastic modulus E does not show a substantial change with respect to the temperature.
- Tg glass transition point
- Example 12 (a) bisphenol A type epoxy resin was used as a thermosetting resin component. Corresponding to this, (b) the curing agent component was thiol in Examples 16 and 18, ammine in Examples 12, 13, and 1921, acid anhydride in Examples 14 and 17, and phenol in Example 15. Was used. (c) One component of the insulating filler and (d) the reactive diluent (crosslinking regulator) component were the same as in Example 11.
- the glass transition point (Tg) and the storage elastic modulus E were measured in the same manner as in Example 11. The results are shown in Table 2.
- the cured product had a glass transition temperature (Tg) in a temperature range of 80 ° C. or higher and 50 ° C. or lower.
- each of the sealing materials of! ⁇ 21 has a glass transition temperature (Tg) in the range of 80 ° C ⁇ 50 ° C.
- Tg glass transition temperature
- Comparative Examples 3 to 4 have a glass transition temperature (Tg) in the range of 50 ° C or higher. Therefore, it is considered that the sealing material is present in a glass state in the low temperature region where the sealing material is subjected to a temperature change.
- the sealing material cured by heating keeps the sealing material itself firmly adhered to the CSP and the circuit board in the cooling process, and all of them shrink together, but in Comparative Examples 3 to 4
- the sealing material becomes a glass state in the temperature range below the glass transition temperature (Tg), and the CSP, the circuit board, and the sealing material in the glass state tend to shrink with their inherent linear expansion coefficients, and thus distortion occurs.
- the weakest CSP electroactive component and / or semiconductor device
- the sealing material of each embodiment of the present invention is a sealing material having a wide temperature range in a rubbery state, that is, a sealing material having a lower glass transition temperature (Tg).
- Tg glass transition temperature
Abstract
Description
Claims
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CN2007800446294A CN101553909B (zh) | 2006-12-04 | 2007-12-03 | 密封材料以及使用该密封材料的安装方法 |
US12/517,311 US8217275B2 (en) | 2006-12-04 | 2007-12-03 | Sealing material and mounting method using the sealing material |
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- 2007-12-03 WO PCT/JP2007/073331 patent/WO2008069178A1/ja active Application Filing
- 2007-12-03 US US12/517,311 patent/US8217275B2/en not_active Expired - Fee Related
- 2007-12-03 JP JP2008548277A patent/JP5143019B2/ja not_active Expired - Fee Related
- 2007-12-03 JP JP2008548278A patent/JP5143020B2/ja not_active Expired - Fee Related
- 2007-12-03 US US12/517,460 patent/US20100006329A1/en not_active Abandoned
- 2007-12-03 WO PCT/JP2007/073332 patent/WO2008069179A1/ja active Application Filing
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JP2003518187A (ja) * | 1999-12-20 | 2003-06-03 | スリーエム イノベイティブ プロパティズ カンパニー | 熱衝撃抵抗性を有する封入剤組成物 |
JP2002343838A (ja) * | 2001-05-14 | 2002-11-29 | Nec Corp | 半導体チップ、その取り外し方法および半導体装置 |
JP2003246838A (ja) * | 2002-02-27 | 2003-09-05 | Arakawa Chem Ind Co Ltd | エポキシ樹脂組成物、電子材料用樹脂組成物、電子材料用樹脂、コーティング剤およびコーティング剤硬化膜の製造方法 |
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CN108981121A (zh) * | 2018-05-25 | 2018-12-11 | 广州市设计院工程建设总承包公司 | 空调系统安装方法 |
Also Published As
Publication number | Publication date |
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JP5143020B2 (ja) | 2013-02-13 |
US20100084174A1 (en) | 2010-04-08 |
JP5143019B2 (ja) | 2013-02-13 |
WO2008069179A1 (ja) | 2008-06-12 |
US8217275B2 (en) | 2012-07-10 |
JPWO2008069179A1 (ja) | 2010-03-18 |
US20100006329A1 (en) | 2010-01-14 |
JPWO2008069178A1 (ja) | 2010-03-18 |
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