JP5143020B2 - 封止材料及び実装構造体 - Google Patents
封止材料及び実装構造体 Download PDFInfo
- Publication number
- JP5143020B2 JP5143020B2 JP2008548278A JP2008548278A JP5143020B2 JP 5143020 B2 JP5143020 B2 JP 5143020B2 JP 2008548278 A JP2008548278 A JP 2008548278A JP 2008548278 A JP2008548278 A JP 2008548278A JP 5143020 B2 JP5143020 B2 JP 5143020B2
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- JP
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- Prior art keywords
- temperature
- sealing material
- circuit board
- electronic component
- elastic modulus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Images
Classifications
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- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49718—Repairing
- Y10T29/49721—Repairing with disassembling
- Y10T29/49723—Repairing with disassembling including reconditioning of part
- Y10T29/49725—Repairing with disassembling including reconditioning of part by shaping
- Y10T29/49726—Removing material
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Description
また、特許文献4には、回路基板に残留した樹脂に更により高い強度の接着剤を塗布し、剥離用板を用いて加熱し取り外す方法が提案されている。更に、特許文献5には、基板に残った樹脂を研削カッターで除去する方法が提案されている。
(i)基板上の所定の位置に電子部品を配置し、導電性接続部を形成する工程;
(ii)前記導電性接続部及びその周囲に、上述した本発明のいずれかの封止材料を供給する工程;並びに
(iii)前記基板を加熱する工程
を含んでなる。
(i)回路基板上の所定の位置に電子部品を配置し、導電性接続部を形成する工程;
(ii)前記導電性接続部及びその周囲に、熱硬化性樹脂組成物を含む封止材料を供給する工程であって、硬化後に、該封止材料硬化物のガラス転移点(Tg)よりも低い温度T1から昇温しながら貯蔵弾性率(E)を測定して、温度変化(ΔT)に対する貯蔵弾性率の変化(ΔE)の割合(ΔE/ΔT)が0.5MPa/℃〜30MPa/℃の範囲にある封止材料を供給する工程;並びに
(iii)前記基板を加熱する工程
を含んでなることを特徴とする電子部品を基板に実装する方法の発明を提供することもできる。
図1は、半導体装置1とその半導体装置1を取り付けるべきガラスエポキシ回路基板6を模式的に示している。半導体装置1にはハンダボール(電極)2が設けられており、各電極に対応して回路基板6上にはランド(電極)5が設けられている。半導体装置1側のハンダボール(電極)2と回路基板6側のランド(電極)5とは、ハンダ3によって接合され、電気的接続が形成されている。ハンダ3による接合部及びその周囲の回路基板6と半導体装置1との間には、封止材料4が適用されて、接合部及びその周囲の回路基板6と半導体装置1との間が封止されている。
本発明の封止材料によってCSPを実装した実装構造体について、リペア性を評価した。上記のような実装操作を行ったCSP実装構造体100個の中から、CSP実装構造体を無作為に10個抽出して、CSPの上部表面に加熱可能な吸着ツールを押し当て、吸着ツールを250℃に1分間加熱した。その後、CSPと回路基板との間に金属製の分離用レバーを差し込んでCSPを持ち上げたところ、封止材料は十分に軟化しており、封止材料を容易に破断させながらCSPを容易に取り外すことができた。
上述した実装操作と同様に、熱硬化性樹脂組成物をCSPの接合部の周囲に塗布して加熱処理を行い、熱硬化性樹脂組成物を硬化させて、CSP実装構造体を得た。このようにリペアされた後にCSPの実装が行われた実装構造体についても、リペアを経ていない実装構造体と同様に、電気的接続も確実になされており、ヒートショック試験においても、リペアしない場合と同様に優れた特性を示した。
(a)熱硬化性樹脂成分としてビスフェノールA型エポキシ樹脂100重量部、これに対応する(b)硬化剤成分としてジシアンジアミド8重量部、(c)絶縁性フィラー成分として50%平均粒径5μmのアルミナフィラー0、10重量部、(d)反応性希釈剤(架橋調整剤)成分としてアルキルグリシジルエーテル10重量部、更に前記熱硬化性樹脂成分及び硬化剤成分の組合せに好適な硬化促進剤1重量部を混合して、封止材料を調製した。混合直後の粘度は28000mPa・sであった。
実施例2〜11では、(a)熱硬化性樹脂成分としてビスフェノールA型エポキシ樹脂を用いた。これに対応する(b)硬化剤成分としては、実施例6及び8でチオールを、実施例2、3、9−11でアミンを、実施例4及び7で酸無水物を、実施例5でフェノールを用いた。(c)絶縁性フィラー成分及び(d)反応性希釈剤(架橋調整剤)成分は、実施例1と同様にした。
比較例1及び2では、(a)熱硬化性樹脂成分としてビスフェノールA型エポキシ樹脂を、対応する(b)硬化剤成分として酸無水物を用い、(c)絶縁性フィラー成分及び(d)反応性希釈剤(架橋調整剤)成分は、実施例1と同様にした。硬化物のガラス転移点(Tg)は、比較例1では164℃、比較例2では90℃であった。
温度T1を50℃、温度T2を200℃に設定した場合における貯蔵弾性率E'及び貯蔵弾性率の変化率ΔE/ΔTに着目して試験した実施例12〜21及び比較例3〜4の各封止材料の特性を表2に示す。
本発明の封止材料によってCSPを実装した実装構造体について、リペア性を評価した。上記のような実装操作を行ったCSP実装構造体100個の中から、CSP実装構造体を無作為に10個抽出して、CSPの上部表面に加熱可能な吸着ツールを押し当て、吸着ツールを250℃に1分間加熱した。その後、CSPと回路基板との間に金属製の分離用レバー(分離用治具)を差し込んでCSPを持ち上げたところ、封止材料は十分に軟化しており、封止材料を容易に破断させながらCSPを容易に取り外すことができた。
上述した実装操作と同様に、熱硬化性樹脂組成物をCSPの接合部の周囲に塗布して加熱処理を行い、熱硬化性樹脂組成物を硬化させて、CSP実装構造体を得た。このようにリペアされた後にCSPの実装が行われた実装構造体についても、リペアを経ていない実装構造体と同様に、電気的接続も確実になされており、ヒートショック試験においても、リペアしない場合と同様に優れた特性を示した。
(a)熱硬化性樹脂成分としてビスフェノールA型エポキシ樹脂100重量部、これに対応する(b)硬化剤成分としてジシアンジアミド8重量部、(c)絶縁性フィラー成分として50%平均粒径5μmのアルミナフィラー0、10重量部、(d)反応性希釈剤(架橋調整剤)成分としてアルキルグリシジルエーテル10重量部、更に前記熱硬化性樹脂成分及び硬化剤成分の組合せに好適な硬化促進剤1重量部を混合して、封止材料を調製した。混合直後の粘度は28000mPa・sであった。
実施例13〜15及び17では、(a)熱硬化性樹脂成分としてビスフェノールA型エポキシ樹脂を、(b)硬化剤成分としてジシアンジアミドと変性アミンの組合せを用いた。(c)絶縁性フィラー成分及び(d)反応性希釈剤(架橋調整剤)成分は、実施例11と同様にした。
実施例16、19及び21では、(a)熱硬化性樹脂成分としてビスフェノールF型エポキシ樹脂を、(b)硬化剤成分としてジシアンジアミドと変性アミンの組合せを用いた。(c)絶縁性フィラー成分及び(d)反応性希釈剤(架橋調整剤)成分は、実施例11と同様にした。
実施例18及び20では、(a)熱硬化性樹脂成分及び(b)硬化剤成分としてウレタン系樹脂組成物を用いた。(c)絶縁性フィラー成分は、実施例11と同様にした。
表1に示すように、比較例3の封止材料は、硬化後において150℃のガラス転移点(Tg)を有しており、ガラス転移点(Tg)付近で測定した温度変化に対する貯蔵弾性率の変化率(ΔE/ΔT)は33MPa/℃であった。
2 ハンダ材料又は導電性接着剤ボール
3 ハンダ材料又は導電性接着剤
4 封止材料
5 ランド
6 基板
Claims (8)
- 少なくとも(a)熱硬化性樹脂成分及び(b)その硬化剤成分を含んでなり、熱硬化性樹脂成分は、エポキシ樹脂組成物、ウレタン樹脂組成物、フェノール樹脂組成物及びアクリル樹脂組成物の群から選ばれる1種又はそれ以上の樹脂組成物である封止材料であって、加熱して得られる硬化物が、−80℃以上で、50℃以下の温度範囲にガラス転移温度(Tg)を有し、
硬化後の前記封止材料を、ガラス転移点(Tg)を含む温度範囲にて、昇温しながら貯蔵弾性率(E)を測定し、温度を横軸にとり、対数目盛りで示す貯蔵弾性率を縦軸にとってプロットして得られるS字形状に変曲するグラフの変曲点において、温度変化(ΔT)に対する貯蔵弾性率の変化(ΔE)の割合(ΔE/ΔT)が、0.5MPa/℃〜30MPa/℃の範囲の値を示し、
ガラス転移温度(Tg)よりも低温側の温度において500MPa以上の貯蔵弾性率を有し、かつ、ガラス転移温度(Tg)よりも高温側の温度において200MPa以下の貯蔵弾性率を有する
ことを特徴とする、電子部品と回路基板との間の電極接合部用の封止材料。 - 前記変曲点における温度変化(ΔT)に対する貯蔵弾性率の変化(ΔE)の割合(ΔE/ΔT)が、0.5MPa/℃〜1.0MPa/℃の範囲の値である請求項1記載の電子部品と回路基板との間の電極接合部用の封止材料。
- 前記硬化物が、−80℃以上で、2.8℃以下の温度範囲にガラス転移温度(Tg)を有する請求項1または2記載の電子部品と回路基板との間の電極接合部用の封止材料。
- ガラス転移温度(Tg)よりも低温側の温度において有する貯蔵弾性率が800MPa以上であることを特徴とする請求項1〜3のいずれかに記載の電子部品と回路基板との間の電極接合部用の封止材料。
- ガラス転移温度(Tg)よりも高温側の温度において有する貯蔵弾性率が50MPa以下であることを特徴とする請求項1〜4のいずれかに記載の電子部品と回路基板との間の電極接合部用の封止材料。
- ガラス転移温度(Tg)よりも高温側の温度において有する貯蔵弾性率が10MPa以下であることを特徴とする請求項1〜5のいずれかに記載の電子部品と回路基板との間の電極接合部用の封止材料。
- ガラス転移温度(Tg)が−50℃〜10℃の温度範囲にあることを特徴とする請求項1〜6のいずれかに記載の電子部品と回路基板との間の電極接合部用の封止材料。
- 回路基板上の所定の位置に電子部品が配置され、該回路基板と該電子部品との対応する電極どうしの間で導電性接続部が形成されてなる、電子部品が回路基板に実装された実装構造体であって、前記導電性接続部の周囲及び電子部品と回路基板との間の空隙が、請求項1〜7のいずれかに記載の封止材料を用いて封止されてなることを特徴とする実装構造体。
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- 2007-12-03 US US12/517,460 patent/US20100006329A1/en not_active Abandoned
- 2007-12-03 WO PCT/JP2007/073331 patent/WO2008069178A1/ja active Application Filing
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Also Published As
Publication number | Publication date |
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JPWO2008069178A1 (ja) | 2010-03-18 |
JPWO2008069179A1 (ja) | 2010-03-18 |
US20100006329A1 (en) | 2010-01-14 |
US20100084174A1 (en) | 2010-04-08 |
US8217275B2 (en) | 2012-07-10 |
WO2008069178A1 (ja) | 2008-06-12 |
WO2008069179A1 (ja) | 2008-06-12 |
JP5143019B2 (ja) | 2013-02-13 |
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