JP2006257295A - 封止樹脂組成物、封止樹脂組成物で封止された電子部品装置及び半導体素子のリペア方法 - Google Patents
封止樹脂組成物、封止樹脂組成物で封止された電子部品装置及び半導体素子のリペア方法 Download PDFInfo
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- JP2006257295A JP2006257295A JP2005077742A JP2005077742A JP2006257295A JP 2006257295 A JP2006257295 A JP 2006257295A JP 2005077742 A JP2005077742 A JP 2005077742A JP 2005077742 A JP2005077742 A JP 2005077742A JP 2006257295 A JP2006257295 A JP 2006257295A
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Abstract
【解決手段】 配線基板上に形成された接続用電極部と配線基板上に搭載された半導体素子との接続部に生じる空隙部分を封止するための封止樹脂組成物であって、封止樹脂組成物中に多層構造となる粒子を含み、多層構造となる粒子の少なくとも1層以上はシロキサン骨格を有する。
【選択図】 図8
Description
2 封止樹脂
3 接続用電極パッド
4 はんだ
5 ソルダーレジスト
6 ビルドアップ配線基板
7 ワイヤ線
8 引き出し線
9 ビルドアップ層
10 コア層
11 パッケージ
Claims (27)
- 配線基板上に形成された接続用電極部と配線基板上に搭載された半導体素子との接続部に生じる空隙部分を封止するための封止樹脂組成物であって、
前記封止樹脂組成物中に多層構造となる粒子を含み、多層構造となる粒子の少なくとも1層以上はシロキサン骨格を有することを特徴とする封止樹脂組成物。 - 前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子は、封止樹脂組成物の弾性を低下させることを特徴とする請求項1に記載の封止樹脂組成物。
- 前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子は、多層構造となる粒子の最外殻であるシエル部と、多層構造となる粒子に包含されるコア部とから成り、コア部がシエル部よりも硬度が低いことを特徴とする請求項2に記載の封止樹脂組成物。
- 前記コア部及びシエル部が、シロキサン骨格で形成されていることを特徴とする請求項2に記載の封止樹脂組成物。
- 前記コア部がシリコーンゴムであり、前記シエル部がシリコーンレジンであることを特徴とする請求項2に記載の封止樹脂組成物。
- 前記コア部のガラス転移温度が、前記シエル部分のガラス転移温度よりも低いことを特徴とする請求項2〜5のいずれかに記載の封止樹脂組成物。
- 前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子を添加する封止樹脂組成物のガラス転移温度が、前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子よりも高く、前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子のシエル部よりも低いことを特徴とする請求項6に記載の封止樹脂組成物。
- 前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子を含む封止樹脂組成物のガラス転移温度が、80℃以上であることを特徴とする請求項2〜7のいずれかに記載の封止樹脂組成物。
- 前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子が、球状であることを特徴とする請求項2〜8のいずれかに記載の封止樹脂組成物。
- 前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子の表面に対して、界面活性剤による表面処理が行われていることを特徴とする請求項2〜9のいずれかに記載の封止樹脂組成物。
- 前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子の平均粒径が、1〜30μmであることを特徴とする請求項2〜10のいずれかに記載の封止樹脂組成物。
- 前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子の平均粒径が、5〜15μmであることを特徴とする請求項11に記載の封止樹脂組成物。
- 前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子の添加量が、1〜30Vol%であることを特徴とする請求項2〜12のいずれかに記載の封止樹脂組成物。
- 前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子の添加量が、15〜25Vol%であることを特徴とする請求項13に記載の封止樹脂組成物。
- 前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子を添加した封止樹脂組成物が、前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子未添加の封止樹脂組成物と比較し、ガラス転移温度点以下の温度領域で線膨張係数が低いことを特徴とする請求項2〜14のいずれかに記載の封止樹脂組成物。
- 前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子が、母材封止樹脂と相溶性を持たないことを特徴とする請求項2〜15のいずれかに記載の封止樹脂組成物。
- 前記シロキサン骨格を少なくとも1層以上有する多層構造となる粒子が、封止樹脂硬化後に溶融しないことを特徴とする請求項2〜16のいずれかに記載の封止樹脂組成物。
- 前記封止樹脂組成物が、平均粒径10μm以下の球状の無機充填剤を含むことを特徴とする請求項2〜17のいずれかに記載の封止樹脂組成物。
- 前記無機充填剤は球状シリカであることを特徴とする請求項18に記載の封止樹脂組成物。
- 請求項1〜19のいずれかに記載の封止樹脂組成物を含む電子部品装置。
- 配線基板に形成された接続用電極部と配線基板上に搭載され、複数の半導体素子を積層した際に生じる接続部の空隙部分の少なくとも1つ以上を請求項1〜19のいずれかに記載の封止樹脂組成物で封止することを特徴とする電子部品装置。
- 配線基板の両面に形成された接続用電極部と配線基板上に両面に搭載された半導体素子の接続部に生じる空隙部分の少なくとも1つ以上の空隙を請求項1〜19のいずれかに記載の封止樹脂組成物で封止することを特徴とする電子部品装置。
- 配線基板の両面に形成された接続用電極部と配線基板上に搭載され、複数の半導体素子を積層した際に生じる接続部の少なくとも1つ以上の空隙部分を請求項1〜19のいずれかに記載の封止樹脂組成物で封止することを特徴とする電子部品装置。
- 配線基板上に搭載された複数の半導体素子の少なくとも一つを取外し可能にした半導体素子のリペア方法であって、
配線基板上に形成された接続用電極部と上記半導体素子との接続部に生じる空隙部分を封止するための封止樹脂組成物としてシロキサン骨格を持つ多層の粒子を含む組成物を用いることにより、封止樹脂硬化後の半導体素子の取外し及び配線基板上に残る封止樹脂残渣の除去を行うことを特徴とする半導体素子のリペア方法。 - 前記シロキサン骨格を持つ多層の粒子は、多層構造となる粒子の最外殻であるシエル部と、多層構造となる粒子に包含されるコア部とから成り、コア部がシエル部よりも硬度が低いことを特徴とする請求項24に記載の半導体素子のリペア方法。
- リペアを必要とする温度域においては前記シエル部分が軟化すると共に前記コア部分の弾性が低下し、これにより半導体素子の取外し及び配線基板上の樹脂残渣除去が促進されることを特徴とする請求項25に記載の半導体素子のリペア方法。
- 前記リペアを必要とする温度域は、180℃以上の温度域であることを特徴とする請求項26に記載の半導体素子のリペア方法。
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JP2008208182A (ja) * | 2007-02-23 | 2008-09-11 | Matsushita Electric Works Ltd | 液状エポキシ樹脂組成物 |
JP2009155431A (ja) * | 2007-12-26 | 2009-07-16 | Sumitomo Bakelite Co Ltd | 液状封止樹脂組成物、半導体装置および半導体装置の製造方法 |
JP2013067756A (ja) * | 2011-09-26 | 2013-04-18 | Tamura Seisakusho Co Ltd | 硬化性樹脂組成物並びに硬化性樹脂組成物の被膜を有するフレキシブル基板及び反射シート |
JP2015002319A (ja) * | 2013-06-18 | 2015-01-05 | 日亜化学工業株式会社 | 発光装置とその製造方法 |
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JP2008208182A (ja) * | 2007-02-23 | 2008-09-11 | Matsushita Electric Works Ltd | 液状エポキシ樹脂組成物 |
JP2009155431A (ja) * | 2007-12-26 | 2009-07-16 | Sumitomo Bakelite Co Ltd | 液状封止樹脂組成物、半導体装置および半導体装置の製造方法 |
JP2013067756A (ja) * | 2011-09-26 | 2013-04-18 | Tamura Seisakusho Co Ltd | 硬化性樹脂組成物並びに硬化性樹脂組成物の被膜を有するフレキシブル基板及び反射シート |
JP2015511066A (ja) * | 2012-03-06 | 2015-04-13 | コーニンクレッカ フィリップス エヌ ヴェ | 照明モジュール及び照明モジュールを製造する方法 |
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JP2015002319A (ja) * | 2013-06-18 | 2015-01-05 | 日亜化学工業株式会社 | 発光装置とその製造方法 |
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US10355173B2 (en) | 2013-06-18 | 2019-07-16 | Nichia Corporation | Method for manufacturing light emitting device |
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