JP2015002319A - 発光装置とその製造方法 - Google Patents
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
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- 239000004408 titanium dioxide Substances 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 238000002845 discoloration Methods 0.000 abstract description 5
- 230000002708 enhancing effect Effects 0.000 abstract 1
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- 238000007789 sealing Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 238000000354 decomposition reaction Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- -1 alkaline earth metal borate Chemical class 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052747 lanthanoid Inorganic materials 0.000 description 4
- 150000002602 lanthanoids Chemical class 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
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- 239000010409 thin film Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
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- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
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- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052586 apatite Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- VSIIXMUUUJUKCM-UHFFFAOYSA-D pentacalcium;fluoride;triphosphate Chemical compound [F-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O VSIIXMUUUJUKCM-UHFFFAOYSA-D 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
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- 150000003568 thioethers Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- General Engineering & Computer Science (AREA)
Abstract
Description
発光装置100の構成について、図面を参照しながら説明する。図1は、発光装置100の構成を示す概略平面図である。図2は、図1のA−Aにおける概略断面図である。
発光素子10は、パッケージ20が少なくともその一部を形成する凹部22C内に収容される。発光素子10は、凹部22Cの底面に載置され、図1に示すように、リード30上に載置されることができる。発光素子10は、接着材によって、リード30に固定される。発光素子10は、第1ワイヤ10aと第2ワイヤ10bを介して、リード30と電気的に接続される。
なお、一般式(1)において、0≦X≦1、0≦Y≦1、0≦Z≦1、X+Y+Z=1、である。
発光装置100は、発光素子10を収容するための凹部22Cを有する。パッケージ20は、この凹部22Cの内周面22Sの少なくとも一部を形成する。凹部22Cは、少なくとも基部21と、側壁部22と、を有する。本実施形態においては、パッケージ20は、発光装置100の側面を形成するとともに凹部22Cの内周面の全面を形成している。凹部22Cの基部21と側壁部22は、パッケージ20で一体成形されている。
本実施形態のように、リード30が凹部22Cの底面に配置されてもよい。リード30は、通常、第1リード部31と、第2リード部32と、を有する。
被覆膜40は、少なくとも、パッケージ20によって形成された凹部22Cの内周面22Sの一部を被覆する。本実施形態においては、凹部22Cの内周面22Sの全面と、側壁部22の上面22Tと、リード30の露出面30Sと、発光素子10の表面と、を覆う。被覆膜40の厚みは、3nm〜100nmとすることができる。
本実施形態では、封止部材50は、凹部22Cに充填され、発光素子10を封止する。封止部材50の材料は特に限定されるものではないが、透光性、耐熱性、耐候性、耐光性に優れた樹脂を用いることが好ましい。このような樹脂としては、前述した各種の熱硬化性樹脂が挙げられる。
発光装置100の製造方法について、図面を参照しながら説明する。図6は、発光装置100の製造方法を説明するための概略断面図である。
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
20…パッケージ
20a…基材
20b…粒子
21…基部
22…側壁部
22C…凹部
22S…内周面
22T…上面
30…リード
30S…露出面
40…被覆膜
40a…クラック
40b…肉薄部
50…封止部材
100…発光装置
Claims (15)
- 発光素子と、
前記発光素子が収容される凹部の内周面の少なくとも一部を形成するパッケージと、
前記凹部の底面に配置され、前記発光素子と電気的に接続されるリードと、
前記凹部の内周面を覆い、透光性と絶縁性を有する被覆膜と、
を備え、
前記パッケージは、樹脂を含む基材と、前記基材と異なる熱膨張係数を有し、少なくとも前記内周面付近に配置される複数の粒子と、によって構成される、
発光装置。 - 前記基材は、エポキシ樹脂とフィラーによって構成され、
前記複数の粒子は、シリコーンによって構成される、
請求項1に記載の発光装置。 - 前記フィラーは、二酸化ケイ素と二酸化チタンの少なくとも一方を含む、
請求項2に記載の発光装置。 - 前記被覆膜は、複数の微小クラックを有する、
請求項1乃至3のいずれかに記載の発光装置。 - 前記複数の微小クラックは、前記複数の粒子上に形成される、
請求項4に記載の発光装置。 - 前記被覆膜の厚みは、前記複数の粒子上において薄く形成されている、
請求項1乃至5のいずれかに記載の発光装置。 - 前記被覆膜は、前記リードの表面を覆う、
請求項1乃至6のいずれかに記載の発光装置。 - 前記被覆膜は、主成分として酸化アルミニウムまたは二酸化ケイ素を備える、
請求項1乃至7のいずれかに記載の発光装置。 - 前記発光素子と前記パッケージが形成する前記内周面の間隔は、2mm以下である、
請求項1乃至8のいずれかに記載の発光装置。 - 前記発光素子の出射光のピーク波長は、360nm以上520nm以下である、
請求項1乃至9のいずれかに記載の発光装置。 - 発光素子を収容するための凹部の内周面の少なくとも一部を形成し、樹脂を含む基材と前記基材と異なる熱膨張係数を有する複数の粒子とによって構成されるパッケージと、前記凹部の底面に配置されるリードと、を一体成形する工程と、
前記凹部の内周面を、透光性と絶縁性を有する被覆膜によって覆う工程と、
を備える発光装置の製造方法。 - 前記被覆膜によって前記内周面を覆う工程では、原子層堆積法によって前記被覆膜を形成する、
請求項11に記載の発光装置の製造方法。 - 前記被覆膜によって前記内周面を覆う工程では、前記リード表面を前記被覆膜によって覆う、
請求項11又は12に記載の発光装置の製造方法。 - 前記被覆膜によって前記内周面を覆う工程後において、前記被覆膜に複数の微小クラックを形成する工程を備える、
請求項11乃至13のいずれかに記載の発光装置の製造方法。 - 前記複数の微小クラックを形成する工程では、前記パッケージを加熱又は冷却する、
請求項14に記載の発光装置の製造方法。
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JP2013127488A JP6221387B2 (ja) | 2013-06-18 | 2013-06-18 | 発光装置とその製造方法 |
US14/299,065 US9871170B2 (en) | 2013-06-18 | 2014-06-09 | Light emitting device and method for manufacturing same |
US15/837,434 US10355173B2 (en) | 2013-06-18 | 2017-12-11 | Method for manufacturing light emitting device |
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US11264541B2 (en) | 2019-03-08 | 2022-03-01 | Nichia Corporation | Light emitting device and method of manufacturing the light emitting device |
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US20150377428A1 (en) * | 2014-06-26 | 2015-12-31 | Shenzhen Crystal River Optoelectronic Technologies Co., Ltd | Light-emitting element |
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US20180108813A1 (en) | 2018-04-19 |
US9871170B2 (en) | 2018-01-16 |
JP6221387B2 (ja) | 2017-11-01 |
US10355173B2 (en) | 2019-07-16 |
US20140369052A1 (en) | 2014-12-18 |
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