JP2012069539A - 発光装置の製造方法 - Google Patents
発光装置の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 230000001681 protective effect Effects 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 38
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000002845 discoloration Methods 0.000 abstract description 11
- 239000000463 material Substances 0.000 description 34
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000007789 sealing Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910007116 SnPb Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920006375 polyphtalamide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052917 strontium silicate Inorganic materials 0.000 description 1
- QSQXISIULMTHLV-UHFFFAOYSA-N strontium;dioxido(oxo)silane Chemical compound [Sr+2].[O-][Si]([O-])=O QSQXISIULMTHLV-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】発光装置の製造方法は、反射膜1bを備える導電部材1を準備する導電部材準備工程と、反射膜上に発光素子3を配置する発光素子配置工程と、原子層堆積法により反射膜上に保護膜5を形成する保護膜形成工程と、を順に有する。
【選択図】図1
Description
図1(a)〜(f)に、本実施の形態の発光装置の製造方法の各工程を示す。図2は、図1(f)における破線枠部の拡大模式図である。
先ず、図1(a)に示すように、母材1a上に反射膜1bが設けられた導電部材1を準備する(導電部材準備工程)。ここでは、母材1aだけでなく反射膜1bも導電性を有している。本実施の形態では、導電部材は母材と反射膜とで構成されている。
次に、図1(b)に示すように、例えば、導電部材1に基部2a及び側壁2bを有するパッケージ2を形成することができる(パッケージ形成工程)。
次に、図1(c)に示すように、反射膜1b上に発光素子3を配置する(発光素子配置工程)。具体的には、接着部材(図示せず)を介して、発光素子3を反射膜1bに配置することができる。接着部材は導電性であっても良いし、絶縁性であっても良い。
次に、図1(d)に示すように、発光素子3と反射膜1bとを導電性のワイヤー4にて電気的に接続することもできる(ワイヤー接続工程)。ここでは、導電性の反射膜1bを介して、発光素子3と母材1aとが電気的に接続されている。
次に、図1(e)に示すように、原子層堆積法(以下、単に「ALD」(Atomic Layer Deposition)ともいう))により反射膜1b上に保護膜5を形成する。つまり、発光観測面側から保護膜5を形成する。スパッタ等の従来の方法と異なり、ALDは反応成分の層を1原子層ごと形成する方法である。以下に、TMA(トリメチルアルミニウム)及び水(H2O)を用いて、酸化アルミニウム(Al2O3)の保護膜を形成する場合について説明する。
図1(f)に示すように、必要に応じて、パッケージの側壁2bよりなる凹部の内側に封止部材6を形成することができる(封止部材形成工程)。さらに、それぞれが発光装置として機能するように導電部材1を切断(導電部材切断工程)した後、必要に応じて導電部材1をパッケージ2の裏面に折り曲げて(導電部材折り曲げ工程)個々の発光装置とすることができる。
図3に基づいて、本実施の形態について説明する。なお、実施の形態1と同様の部材については同様の番号を用いており、重複した説明は省略する。
先ず、図3(a)に示すように、導電部材1を準備する(導電部材準備工程)。本実施の形態では、実施の形態1と異なり、母材のみで導電部材としており、この段階では反射膜1bは設けられていない。
次に、図3(b)に示すように、導電部材1に基部2a及び側壁2bを有するパッケージ2を形成することができる(パッケージ形成工程)。
次に、図3(c)に示すように、導電部材1上に発光素子3を配置する(発光素子配置工程)。具体的には、接着部材(図示せず)を介して、発光素子3を導電部材1に配置することができる。
次に、図3(d)に示すように、導電部材1と発光素子3とを導電性のワイヤー4にて電気的に接続する(ワイヤー接続工程)。
次に、導電部材1及びワイヤー4の表面に反射膜1bを形成する(反射膜形成工程)。作図の都合上、図3(e)では、ワイヤー4の表面に反射膜1bが図示されていないが、本実施の形態では実際は導電部材1の表面だけでなくワイヤー4の表面にも反射膜1bが形成されている。反射膜1bは導電部材1とワイヤー4との接合部分も被覆している。
次に、図3(f)に示すように、ALDにより反射膜1bの表面に保護膜5を形成する。作図の都合上、図3(f)ではワイヤー4の表面に保護膜5が図示されていないが、本実施の形態では実際は、反射膜1bを介して、ワイヤー4の表面にも保護膜5が形成されている。
図3(g)に示すように、必要に応じて、パッケージの側壁2bよりなる凹部の内側に封止部材6を形成することができる(封止部材形成工程)。さらに、それぞれが発光装置として機能するように導電部材1を切断(導電部材切断工程)した後、必要に応じて導電部材1をパッケージ2の裏面に折り曲げて(導電部材折り曲げ工程)個々の発光装置とすることができる。
1a・・・母材
1b・・・反射膜
2・・・パッケージ
2a・・・基部
2b・・・側壁
3・・・発光素子
4・・・ワイヤー
5・・・保護膜
6・・・封止部材
Claims (7)
- 反射膜を備える導電部材を準備する導電部材準備工程と、
前記反射膜上に発光素子を配置する発光素子配置工程と、
原子層堆積法により、前記反射膜の表面に保護膜を形成する保護膜形成工程と、を順に有することを特徴とする発光装置の製造方法。 - 前記発光素子配置工程と前記保護膜形成工程との間に、前記反射膜と前記発光素子とをワイヤーにて電気的に接続するワイヤー接続工程を有する請求項1に記載の発光装置の製造方法。
- 前記導電部材準備工程と前記発光素子配置工程との間に、前記導電部材に側壁を有するパッケージを形成するパッケージ形成工程を有する請求項1又は2に記載の発光装置の製造方法。
- 導電部材を準備する導電部材準備工程と、
前記導電部材上に発光素子を配置する発光素子配置工程と、
前記導電部材と前記発光素子とをワイヤーにて電気的に接続するワイヤー接続工程と、
前記導電部材及び前記ワイヤーの表面に反射膜を形成する反射膜形成工程と、
原子層堆積法により、前記反射膜の表面に保護膜を形成する保護膜形成工程と、を順に有することを特徴とする発光装置の製造方法。 - 前記反射膜は銀を含むことを特徴とする請求項1〜4のいずれかに記載の発光装置の製
造方法。 - 前記保護膜は、酸化アルミニウム又は二酸化珪素であることを特徴とする請求項1〜5のいずれかに記載の発光装置の製造方法。
- 前記反射膜形成工程において、電気めっき法により前記反射膜を形成することを特徴とする請求項4に記載の発光装置の製造方法。
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