TWI761689B - 發光裝置之製造方法 - Google Patents
發光裝置之製造方法 Download PDFInfo
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- TWI761689B TWI761689B TW108123444A TW108123444A TWI761689B TW I761689 B TWI761689 B TW I761689B TW 108123444 A TW108123444 A TW 108123444A TW 108123444 A TW108123444 A TW 108123444A TW I761689 B TWI761689 B TW I761689B
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- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
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Abstract
本發明之實施方式之發光裝置(100)具備:上表面(11)具有凹部(15)之基體(10)、設置於上述凹部(15)之發光元件(20)及設置於上述凹部(15)之密封構件(30),上述密封構件(30)含有經過表面處理之粒子(40)或與分散劑共存之粒子(40),上述密封構件(30)之邊緣部之至少一部分係處於上述凹部之邊緣(17)附近且上述粒子(40)或上述粒子之凝聚體(41)中之至少任一種偏集存在之區域。
Description
本發明係關於一種具備發光元件及對其進行密封之密封構件之發光裝置。
先前,有一種發光裝置,其藉由以下方式製造:於封裝體之凹部配置發光元件,利用金屬線將發光元件與引線框架連接,進而於凹部填充密封樹脂並使其硬化(例如參照專利文獻1、2)。
[先前技術文獻]
[專利文獻1]日本專利特開2010-080620號公報
[專利文獻2]日本專利特開2011-222718號公報
[非專利文獻]
[非專利文獻1]BM. Weon, JH. Je, Self-Pinning by Colloids Confined at a Contact Line, Phys. Rev. Lett. 110, 028303(2013)
[發明所欲解決之問題]
然而,此種發光裝置存在如下問題:由於密封樹脂之液狀母材具有高潤濕性,故而產生密封樹脂自封裝體之凹部向上表面之非意欲之潤濕擴散。
因此,本發明係鑒於此種情況而成者,其目的在於提供一種密封構件自基體之凹部向上表面之潤濕擴散得以抑制之發光裝置。
[解決問題之技術手段]
為了解決上述課題,本發明之實施方式之發光裝置之特徵在於,具備上表面具有凹部之基體、設置於上述凹部之發光元件及設置於上述凹部之密封構件,上述密封構件含有經過表面處理之粒子或與分散劑共存之粒子,上述密封構件之邊緣部之至少一部分係處於上述凹部之邊緣附近且上述粒子或上述粒子之凝聚體中之至少任一種偏集存在之區域。
[發明之效果]
根據本發明,能夠抑制密封構件向基體上表面之潤濕擴散。
以下,適當參照圖式對發明之實施方式進行說明。但,以下說明之發光裝置係用於將本發明之技術思想具體化者,只要無特定之記載,則本發明並不限定於以下之說明。又,於一實施方式、實施例中說明之內容亦可適用於其他實施方式、實施例。又,各圖式所示之構件之大小或位置關係等有時作放大處理以使說明變得明確。
<實施方式1>
圖1(a)係實施方式1之發光裝置之概略俯視圖,圖1(b)係表示圖1(a)中之A-A剖面之概略剖視圖。
如圖1所示,實施方式1之發光裝置100具備:基體10、發光元件20及密封構件30。基體10於上表面11具有凹部。發光元件20設置於凹部15。密封構件30設置於凹部15。
更詳細而言,發光裝置100為表面安裝型LED。發光裝置100具備:於上表面11形成有凹部15之基體10、收納於凹部15之兩個發光元件20、及覆蓋所有發光元件20而填充於凹部15之密封構件30。基體10為具有導電構件及保持該導電構件之成形體之封裝體。導電構件為正負一對之引線電極。成形體為白色之樹脂成形體。基體之凹部15之底面之一部分由導電構件之上表面構成。兩個發光元件20各自為LED元件,利用接著劑接著於基體之凹部15之底面,並利用金屬線與導電構件連接。密封構件30以樹脂為母材35。密封構件30含有螢光體50。螢光體50偏集存在於凹部15之底面側。
並且,密封構件30含有經過表面處理之粒子40。又,密封構件30之邊緣部之至少一部分係處於凹部之邊緣17附近且粒子40或其凝聚體41中之至少任一種偏集存在之區域。
具有此種構成之發光裝置100可抑制因密封構件之液狀母材具有之高潤濕性引起密封構件30自基體之凹部15向上表面11之潤濕擴散。
再者,處於基體之凹部之邊緣17附近且粒子40或其凝聚體41中之至少任一種偏集存在之密封構件30之區域可為密封構件30之邊緣部之一部分,但較佳為密封構件30之邊緣部之一半以上(例如邊緣部之全周之一半以上),更佳為密封構件30之邊緣部之大致全部(例如邊緣部之全周之大致全長)。
又,於本說明書中,基體之凹部15之邊緣17具體而言係指基體之凹部15之內壁面與上表面11之邊界部。進而,所謂基體之凹部之邊緣17附近,為上述邊界部之附近,不僅包含基體之凹部15之內壁面側,亦包含基體之上表面11側。
於本實施方式中,經過表面處理之粒子40亦可取代為與分散劑共存之粒子。該情形時,能夠獲得同樣之作用、效果。該與分散劑共存之粒子藉由向密封構件調配粒子及用於使該粒子分散之分散劑而獲得,例如成為吸附有分散劑之粒子。
以下,對藉由粒子40或其凝聚體41中之至少任一種抑制密封構件30向基體上表面11之潤濕擴散之原理進行說明。
圖2(a)及(b)係對抑制本發明中之密封構件之潤濕擴散之原理進行說明之概略圖。一般認為,抑制密封構件之潤濕擴散之原理包含兩個階段。參照圖2(a)對第1階段進行說明。第1階段係基於以下而進行:於液狀之密封構件之母材35中,使粒子間之相互作用較少、即凝聚性受到抑制之粒子40分散,較佳為大致均勻地分散。固化前之密封構件30在滴加於基體之凹部15內時,於凹部之邊緣17附近形成彎月端部。於存在於該彎月端部之前端(空氣(氣體)、密封構件之母材(液體)、基體(固體)之三相相接之接觸點之附近)之粒子40與存在於相鄰之彎月端部之前端之粒子40之間產生毛細管力。該毛細管力之作用係以使存在於相鄰之彎月端部之前端之粒子40相互靠近之方式起作用。並且,藉由使該毛細管力沿著密封構件30之邊緣部(本例中,亦為基體之凹部之邊緣17)連續地起作用,可抑制滴加於基體之凹部15內之固化前之密封構件30之潤濕擴散。特別是藉由使該毛細管力遍及密封構件30之邊緣部之大致全部(本例中,亦為基體之凹部之邊緣17之大致整個區域)起作用,可有效地抑制固化前之密封構件30之潤濕擴散。再者,由於該毛細管力於粒子之分散性高之膠體溶液中容易顯現(例如參照上述非專利文獻1),因此藉由對粒子40實施抑制粒子之凝聚之表面處理或與粒子40一起調配分散劑,能夠使毛細管力高效地顯現。
參照圖2(b)對第2階段進行說明。第2階段係藉由促進密封構件30之固化之加熱而進行。於使密封構件30固化之過程中,上述彎月端部非常薄,密封構件之母材35中之低沸點成分(例如,若為聚矽氧樹脂,則為低沸點矽氧烷)最快地揮發。由於因該揮發引起之彎月端部之表面張力變化,於固化前之密封構件30中產生向彎月端部流動之表面張力流。並且,運送至彎月端部之固化前之密封構件30由於藉由上述毛細管力被抑制了潤濕擴散,因此返回至內側,其結果,於彎月端部產生對流。於該過程中,於彎月端部,藉由對流而運送來之粒子40利用上述毛細管力而進行排列,或因粒子濃度之局部上升而凝聚。如此,聚集於密封構件30之邊緣部之粒子40進一步被抑制因加熱而體積膨脹,以致黏度、表面張力均降低之密封構件30之潤濕擴散。
如上所述,經固化之密封構件30之邊緣部之至少一部分成為粒子40或其凝聚體41中之至少任一種偏集存在之區域。再者,由於上述毛細管力依存於粒子之分散性,因此就抑制密封構件30之潤濕擴散之觀點而言,較佳為粒子40比粒子之凝聚體41多,但上述毛細管力對於粒子之凝聚體41亦起作用。又,於使密封構件30固化之過程中,粒子40凝聚,其結果,有時亦於經固化之密封構件30中觀測到大量粒子之凝聚體41。
再者,於本說明書中,所謂「偏集存在」係指於特定之區域以高密度存在,但並不否定於該特定之區域以外之區域以低密度存在。又,「偏集存在」之較佳實施方式之一為於特定之區域以高密度存在,並且於其他區域不存在。
以下,對發光裝置100之較佳形態進行說明。
(粒子40)
粒子40調配於密封構件之母材35中,具有抑制密封構件30向基體上表面11之潤濕擴散之作用。以下對該粒子40進行詳述。再者,於將粒子40與後述之填充劑或螢光體於表述上加以區別之情形時,粒子40稱為第1粒子,其他填充劑或螢光體稱為第2粒子、第3粒子等。
粒子40可使用粒徑例如為1 nm以上且100 μm以下之粒子,較佳為奈米粒子(可定義為粒徑為1 nm以上且100 nm以下之粒子)。只要粒子40為奈米粒子,則可以少量之調配獲得上述毛細管力,抑制密封構件30向基體上表面11之潤濕擴散。其中,粒子40更佳為粒徑為5 nm以上且50 nm以下。粒子之凝聚體41為粒子40凝聚而成者。由於粒子之凝聚體41大於粒子40,因此容易觀測,可藉由觀測其之存在推測粒子40之存在。粒子之凝聚體41之直徑例如為100 nm~300 μm左右,較佳為1000 nm以上且100 μm以下。又,粒子40或其凝聚體41有時具有使發光元件20之光散射之作用,特別是於粒子40為奈米粒子之情形時,可藉由瑞利散射(Rayleigh scattering)使藍色光等短波長光之散射增大。又,藉由該瑞利散射之產生,容易激發螢光體50,減少螢光體50之調配量,縮減發光裝置之成本。進而,亦能夠提高密封構件30之透過率,提高光之提取效率。再者,粒子40之粒徑可由平均粒徑(D50
)進行定義。粒子40或其凝聚體41之直徑可利用雷射繞射/散射法、圖像分析法(掃描型電子顯微鏡(SEM)、透過型電子顯微鏡(TEM))、動態光散射法、X射線小角散射法等進行側定。更具體而言,可將使用SEM等對剖面進行觀察而求得之D50
設定為粒子40或其凝聚體41之粒徑。
粒子40之形狀無特別限定,可為不定形破碎狀等,但藉由為球狀,可藉由將粒子間之接觸設為最小而抑制凝聚,故較佳。又,粒子40若為板狀,則可對密封構件30賦予氣體阻隔性。
粒子40無特別限定,既可為有機物,亦可為無機物。就發光裝置之光提取效率之觀點而言,粒子40較佳為透光性之物質。又,就焊料耐熱性之觀點而言,粒子40較佳為熔點為260℃以上。具體而言,作為有機物,較佳為聚甲基丙烯酸酯及其共聚物、聚丙烯酸酯及其共聚物、交聯聚甲基丙烯酸酯、交聯聚丙烯酸酯、聚苯乙烯及其共聚物、交聯聚苯乙烯、環氧樹脂、聚矽氧樹脂、非晶氟樹脂等樹脂。又,設定為亦包含利用選自該等中之至少1種樹脂塗佈無機粒子而成之芯·殼型粒子之物質。由於此種有機物之粒子藉由共聚合使折射率與密封構件之母材35一致,因此即使凝聚亦可使透光性得以維持等,光學上之影響少。另一方面,作為無機物,較佳為氧化矽、氧化鋁、氧化鋯、氧化鈦、氧化鋅、氧化鎂、氧化鎵、氧化鉭、氧化鈮、氧化鉍、氧化釔、氧化銥、氧化銦、氧化錫等氧化物。此種無機物之粒子於耐熱性、耐光性方面優異,又,導熱性相對較高。其中,氧化矽、氧化鋁、氧化鋯、氧化鈦容易獲得,相對廉價。此外,粒子40亦可使用與後述之螢光體50相同之物質。
粒子40較佳為實施有表面處理(即,藉由表面處理於粒子40之表面形成附著物)。由此,抑制粒子40之凝聚,換言之,提高粒子40之分散性,容易顯現上述毛細管力,容易抑制密封構件30向基體上表面11之潤濕擴散。此種粒子40之表面處理可列舉:長鏈脂肪族胺及其衍生物、長鏈脂肪族脂肪酸及其衍生物、矽烷偶合劑、具有胺基及/或羧基之矽氧烷化合物、具有選自矽烷醇基、氫矽烷基、醇基之至少一個之矽氧烷化合物、具有選自矽烷醇基、烷氧基、氫矽烷基中之至少一個及乙烯基矽烷基之矽氧烷化合物、單縮水甘油醚末端矽氧烷化合物、單羥基醚末端矽氧烷化合物、有機矽氮烷化合物、有機鈦酸酯化合物、異氰酸酯化合物、環氧化合物、磷酸及磷酸酯化合物等(即,藉由表面處理,使該等衍生物及/或化合物附著於粒子40之表面)。又,作為分散劑,除上述表面處理材料之外,可列舉:具有酸性基或鹼性基之高分子化合物、含氟界面活性劑、多元醇化合物、聚環氧乙烷衍生物、聚環氧丙烷衍生物、多元脂肪酸衍生物、矽烷偶合劑之水解物、四級銨鹽化合物等。粒子40為奈米粒子之情形時,較佳為實施表面處理,粒子40為微米粒子之情形時,亦較佳為調配分散劑。
圖3係表示實施方式1之發光裝置100之密封構件中的經過表面處理之粒子之含量與向基體上表面之潤濕擴散之關係之曲線圖。再者,圖3中之密封構件之潤濕擴散產生率係將到達後述發光裝置之單片化步驟中的基體10之上表面之切斷位置(即,基體10之上表面與端面所成之角)之潤濕擴散設為「產生」,將未達其之潤濕擴散設為「未產生」而計算者。如圖3所示,若粒子40及/或其凝聚體41之含量為0.05 wt%以上,則容易獲得抑制密封構件30向基體上表面11之潤濕擴散之作用。就獲得抑制密封構件30之潤濕擴散之作用之觀點而言,粒子40及/或其凝聚體41之含量之上限值無特別限定,但若粒子40及/或其凝聚體41之含量超過50 wt%,則有產生密封構件30之過度之黏度上升或白濁、粒子40之過度之凝聚等之虞。因此,粒子40及/或其凝聚體41之含量較佳為0.05 wt%以上且50 wt%以下。特別是藉由使粒子40及/或其凝聚體41之含量為0.1 wt%以上且20 wt%以下,可穩定地獲得於良好地維持密封構件30之各種特性之同時抑制密封構件30向基體上表面11之潤濕擴散之作用。更佳之粒子40及/或其凝聚體41之含量為0.2 wt%以上且2.0 wt%以下,進而可為0.2 wt%以上且未達0.5 wt%。再者,粒子40及/或其凝聚體41之含量相當於粒子40之調配量,作為相對於密封構件之母材35之比,以重量百分比表示。如此,以粒子40之極少之調配量抑制密封構件30向基體上表面11之潤濕擴散於發光裝置之製造中為較大之優點。
於發光裝置100中,基體10之端面為經切斷之面。於產生密封構件自基體之凹部向上表面之非意欲之潤濕擴散之情形時,會存在以下情況:難以使密封構件之上表面向上方形成凸起之面而難以提高光束,或者因密封構件向導電構件上之潤濕擴散而產生焊料潤濕不良等,特別視為問題的是與基體之單片化有關之障礙。有發光裝置係維持複數個基體縱橫相連之狀態直至密封步驟結束,其後進行單片化而製造。於該發光裝置之單片化步驟中,將跨越鄰接之基體之上表面而形成之密封構件以切片機等進行切斷時,有於切斷部產生密封構件之毛邊之虞。此種密封構件之毛邊成為發光裝置之外觀或配光之惡化、大量保管時之損傷等之原因。如此,抑制密封構件向基體上表面之潤濕擴散對伴隨基體之切斷而製造之發光裝置特別有意義。
又,聚矽氧系樹脂為相對較柔軟之樹脂,難以用切片機等進行切斷,若有必要將其切斷,則發光裝置之單片化步驟變得繁瑣。因此,抑制密封構件30向基體上表面11之潤濕擴散對密封構件之母材35為聚矽氧樹脂、改性聚矽氧樹脂、聚矽氧改性樹脂、或混成聚矽氧樹脂之發光裝置更有意義。
<實施方式2>
圖4(a)係實施方式2之發光裝置之概略俯視圖,圖4(b)係表示圖4(a)中之B-B剖面之概略剖視圖。
如圖4所示,實施方式2之發光裝置200具備基體10、發光元件20及密封構件30。基體10於上表面11具有凹部15。發光元件20設置於凹部15。密封構件30設置於凹部15。
更詳細而言,發光裝置200為表面安裝型LED。發光裝置200具備:於上表面11形成有凹部15之基體10、收納於凹部15之一個發光元件20、及覆蓋該發光元件20而填充於凹部15之密封構件30。基體10為具有導電構件及保持該導電構件之成形體之封裝體。導電構件為正負一對之引線電極。成形體為白色之樹脂成形體。基體之凹部15之底面之一部分由導電構件之上表面構成。發光元件20為LED元件,利用接著劑接著於基體之凹部15之底面,並利用金屬線與導電構件連接。密封構件30以樹脂為母材35。密封構件30含有螢光體50。螢光體50偏集存在於凹部15之底面側。
並且,密封構件30含有經過表面處理之粒子40。又,密封構件30之緣部之至少一部分係處於凹部之邊緣17附近且粒子40或其凝聚體41中之至少任一種偏集存在之區域。
具有此種構成之發光裝置200亦可抑制密封構件30自基體之凹部15向上表面11之潤濕擴散。再者,於本實施方式中,即便經過表面處理之粒子40取代為與分散劑共存之粒子,亦可獲得同樣之作用、效果。該與分散劑共存之粒子係藉由對於密封構件調配粒子及用於使該粒子分散之分散劑而獲得,例如成為吸附有分散劑之粒子。
於發光裝置200中,粒子40或其凝聚體41中之至少任一種亦存在於密封構件30之外邊緣、即密封構件30之邊緣部之外側之附近。存在於該密封構件30之外邊緣之粒子40及/或其凝聚體41以堵住密封構件30之方式起作用,可更進一步抑制密封構件30向基體上表面11之潤濕擴散。
於發光裝置200中,密封構件30之上表面向上方形成凸起之面。由於密封構件30係藉由偏集存在於其邊緣部之粒子40及/或其凝聚體41而被抑制向基體上表面11之潤濕擴散,因此容易增大母材35之量,使上表面容易向上方形成凸起之面。由此,容易獲得光之提取效率優異之發光裝置。
於發光裝置200中,於基體之上表面11上形成有無機物之覆膜60。該覆膜60用於抑制導電構件因外部氣體或水分引起之劣化。覆膜60就其功能上而言至少於導電構件上形成即可,但通常係於基體之凹部15內安裝發光元件20之後,遍及基體10之上表面側之大致整個區域而形成。覆膜60例如由氧化鋁、氧化矽、氮化鋁、氮化矽或該等之混合物構成。覆膜60之膜厚較佳為1 nm以上且50 nm以下,更佳為2 nm以上且25 nm以下。覆膜60之形成方法可為濺鍍法等,但較佳為能夠以高精度形成厚度大致均勻之膜之原子層沈積(ALD:Atomic Layer Deposition)法。此種無機物之覆膜60表面能量相對較大,容易使密封構件30向基體上表面11上潤濕擴散。因此,抑制密封構件30向基體上表面11之潤濕擴散對於在基體之上表面11上形成有無機物之覆膜60之發光裝置特別有意義。
以下,對本發明之發光裝置之各構成要素進行說明。
(基體10)
基體為成為安裝發光元件之殼體或底座之構件。基體主要由與發光元件電性連接之導電構件及保持該導電構件之成形體構成。基體有封裝體之形態或配線基板之形態。具體而言,基體可列舉於引線框架上藉由轉移成形或射出成形等而將樹脂成形體一體成形而成者、印刷有導電膏之陶瓷胚片積層、煅燒而成者等。基體之上表面較佳為大致平坦,但亦可彎曲。於基體之上表面形成有凹部。凹部既可藉由使成形體自身凹陷而形成,亦可藉由於大致平坦之成形體之上表面另外形成框狀之突起,而將該凸部之內側作為凹部。凹部之俯視形狀可列舉矩形、帶有圓角之矩形、圓形、橢圓形等。為了使成形體容易自模具脫模,並且為了高效地提取發光元件之光,凹部之側壁面較佳為自凹部底面朝向上方以凹部擴徑之方式傾斜(包含彎曲)(傾斜角例如距凹部底面95°以上且120°以下)。凹部之深度無特別限定,例如較佳為0.05 mm以上且2 mm以下、進而較佳為0.1 mm以上且1 mm以下,更佳為0.25 mm以上且0.5 mm以下。
(導電構件)
導電構件可使用與發光元件連接且可導電之金屬構件。具體而言,可列舉由金、銀、銅、鐵、鋁、鎢、鈷、鉬、鉻、鈦、鎳、鈀、或該等之合金、磷青銅、摻入鐵之銅等形成之引線電極或配線。又,導電構件可於其表層設置銀、鋁、銠、金、銅、或該等之合金等之鍍敷或光反射膜,其中較佳為光反射性最優異之銀。
(成形體)
成形體可列舉以如下樹脂為母材之材料:脂環聚醯胺樹脂、半芳香族聚醯胺樹脂、聚對苯二甲酸乙二酯、聚對苯二甲酸環己酯、液晶聚合物、聚碳酸酯樹脂、間規聚苯乙烯、聚苯醚、聚苯硫醚、聚醚碸樹脂、聚醚酮樹脂、聚芳酯樹脂等熱塑性樹脂;聚雙馬來醯亞胺三樹脂、環氧樹脂、環氧改性樹脂、聚矽氧樹脂、聚矽氧改性樹脂、聚醯亞胺樹脂、聚胺基甲酸酯樹脂等熱硬化性樹脂。又,可於該等母材中混入作為填充劑或著色顏料之玻璃、二氧化矽、氧化鈦、氧化鎂、碳酸鎂、氫氧化鎂、碳酸鈣、氫氧化鈣、矽酸鈣、矽酸鎂、矽灰石、雲母、氧化鋅、鈦酸鋇、鈦酸鉀、硼酸鋁、氧化鋁、氧化鋅、碳化矽、氧化銻、錫酸鋅、硼酸鋅、氧化鐵、氧化鉻、氧化錳、碳黑等粒子或纖維。此外,成形體亦可由含有氧化鋁、氮化鋁或該等之混合物之陶瓷等形成。此種陶瓷與上述樹脂材料相比,通常表面能量較大,容易使密封構件向基體上表面潤濕擴散。
(發光元件20)
發光元件可使用LED(發光二極體)元件等半導體發光元件。發光元件只要於由各種半導體構成之元件結構中設置有正負一對電極即可。尤佳為能夠高效地激發螢光體之氮化物半導體(Inx
Aly
Ga1-x-y
N、0≦x、0≦y、x+y≦1)之發光元件。此外,亦可為鎵砷系、鎵磷系半導體之發光元件。正負一對電極設置於同一面側之發光元件可進行將各電極以金屬線與導電構件連接之面朝上安裝,或進行將各電極以導電性接著劑與導電構件連接之面朝下(覆晶)安裝。於正負一對電極分別設置於彼此相反之面之發光元件中,下表面電極以導電性接著劑與導電構件接著,上表面電極以金屬線與導電構件連接。一個發光裝置所搭載之發光元件之個數可為一個,亦可為複數個。複數個發光元件可串聯或並聯連接。
(密封構件30)
密封構件為密封發光元件之構件。就密封構件之母材而言,只要為具有電絕緣性、可透過自發光元件出射之光(較佳為透過率70%以上)、固化前具有流動性之材料即可。具體而言,可列舉:聚矽氧樹脂、環氧樹脂、酚樹脂、聚碳酸酯樹脂、丙烯酸系樹脂、TPX樹脂、聚降烯樹脂、或該等之改性樹脂或混成樹脂。其中,聚矽氧樹脂或其改性樹脂由於耐熱性或耐光性優異,固化後之體積收縮少,因此較佳。密封構件較佳為於其母材中含有填充劑或螢光體等,但亦可不含有。
(填充劑)
填充劑可使用擴散劑或著色劑等。具體而言,可列舉:二氧化矽、氧化鈦、氧化鎂、碳酸鎂、氫氧化鎂、碳酸鈣、氫氧化鈣、矽酸鈣、氧化鋅、鈦酸鋇、氧化鋁、氧化鐵、氧化鉻、氧化錳、玻璃、碳黑等。填充劑之形狀可列舉球狀、不定形破碎狀、針狀、柱狀、板狀(含有鱗片狀)、纖維狀或樹枝狀等(後述之螢光體亦同樣)。又,亦可為中空或多孔質之形狀。
(螢光體50)
螢光體吸收自發光元件出射之一次光之至少一部分,並出射與一次光不同波長之二次光。具體而言,可列舉:經鈰賦活之釔鋁石榴石、經銪及/或鉻賦活之含氮鋁矽酸鈣、經銪賦活之賽綸陶瓷(SiAlON)、經銪賦活之矽酸鹽、經錳賦活之氟化矽酸鉀等。由此,可形成出射可見波長之一次光及二次光之混色光(例如白色系)之發光裝置、或被紫外光之一次光激發而出射可見波長之二次光之發光裝置。
(金屬線)
金屬線為將發光元件之電極與導電構件進行電性連接之構件。金屬線可使用金、銅、銀、鉑、鋁或該等之合金之金屬線。尤佳為不易產生由來自密封構件之應力引起之斷裂、且熱電阻等優異之金線。又,為了獲得高之光提取效率,亦可至少表面由銀構成。
(接著劑)
接著劑為將發光元件固定於基體之構件。絕緣性接著劑可使用環氧樹脂、聚矽氧樹脂、聚酞亞胺樹脂、或該等之改性樹脂或混成樹脂等。作為導電性接著劑,可使用銀、金、鈀等導電膏、或金-錫等焊料、低熔點金屬等濾材。
[實施例]
以下,對本發明之實施例進行詳述。再者,不言而喻,本發明並不僅限定於以下所示之實施例。
<實施例1>
實施例1之發光裝置為具有圖1所示例之發光裝置100之結構的俯視(top view)式之SMD(Surface Mount Device,表面安裝元件)型LED。
基體係大小為縱3.0 mm、橫3.0 mm、厚0.52 mm之長方體狀,且為於正負一對(第1及第2)之引線電極上將成形體一體地成形而構成之封裝體。該基體藉由如下方式製作:將複數組引線電極經由懸掛式引線縱橫連接而成之加工金屬板(引線框架)設置於模具內,注入液狀之成形體之構成材料並使其固化、脫模後,進行切斷(單片化)。再者,於本實施例中,基體之切斷係於發光元件之密封步驟後進行。
第1及第2引線電極各自為對表面實施有銀之鍍敷的最大厚度0.2 mm之銅合金之板狀小片。第1及第2引線電極之下表面之露出區域與成形體之下表面實質上為同一面,構成基體之下表面。第1及第2引線電極各自於基體之端面露出其一部分(經切斷之懸掛式引線部)。於該露出部形成有作為齒形結構發揮功能之凹陷。
成形體係俯視之外形為縱3.0 mm、橫3.0 mm之正方形狀,最大厚為0.52 mm,且係含有氧化鈦之環氧樹脂製。於成形體之上表面即基體之上表面之大致中央形成有直徑2.48 mm、深度0.32 mm之俯視圓形狀之凹部。凹部之側壁面之傾斜角度距凹部底面95°。
第1及第2引線電極之上表面構成凹部之底面之一部分。於第1引線電極之上表面,以作為聚矽氧樹脂之接著劑接著有兩個發光元件。該兩個發光元件各自為於藍寶石基板上積層有氮化物半導體之元件結構的可發出藍色(中心波長約460 nm)光之縱350 μm、橫550 μm、厚120 μm之LED元件。又,兩個發光元件各自之p、n電極之一個以金屬線與第1引線電極之上表面連接,p、n電極之另一個以金屬線與第2引線電極之上表面連接。金屬線為線徑25 μm之金線。
又,於第2引線電極之上表面,以作為銀膏之導電性接著劑接著有縱150 μm、橫150 μm、厚85 μm之對向電極結構之齊納二極體(zener diode)即保護元件。又,保護元件之上表面電極以金屬線與第1引線電極之上表面連接。
於基體之凹部填充有密封構件,且被覆發光元件。密封構件係以苯基聚矽氧樹脂為母材,其中含有經鈰賦活之釔鋁石榴石(YAG:Ce)之螢光體、二氧化矽之填充劑(粒徑6 μm)及氧化鋯之粒子。氧化鋯粒子之粒徑約為5 nm,經過矽氧烷化合物之表面處理,相對於母材之樹脂而調配0.2 wt%。密封構件之上表面與基體之上表面大致為同一面,大致成為平坦面(嚴格地說,因硬化收縮而存在若干凹面)。該密封構件係藉由利用分注器等向基體之凹部內滴加液狀之構成材料並利用加熱使其固化而形成。再者,螢光體偏集存在於凹部之底面側。
圖5係實施例1之發光裝置之密封構件之邊緣部的利用掃描型電子顯微鏡(日立製作所公司製之S-4800)觀察到之上表面觀察圖像。圖6係圖5所示之密封構件之邊緣部之能量分散型X射線(EDX)分析之資料。圖7係圖5所示之密封構件之邊緣部的利用掃描型電子顯微鏡觀察到之剖面觀察圖像。如圖5及圖6所示,密封構件之邊緣部之至少一部分成為處於基體之凹部之邊緣附近且氧化鋯之粒子或該粒子之凝聚體中之至少任一種偏集存在之區域。又,該情況於圖7(特別是以箭頭表示之部分)亦可確認。
如以上方式構成之實施例1之發光裝置可起到與實施方式1之發光裝置100同樣之效果。
[產業上之可利用性]
本發明之發光裝置可用於液晶顯示器之背光光源、各種照明器具、大型顯示器、廣告或目的地導向牌等各種顯示裝置、以及數位攝錄影機、傳真機、影印機、掃描機等中之圖像讀取裝置、投影機裝置等中。
10‧‧‧基體(11:上表面、15:凹部、17:邊緣)
20‧‧‧發光元件
30‧‧‧密封構件
35‧‧‧密封構件之母材
40‧‧‧經過表面處理之粒子、或與分散劑共存之粒子
41‧‧‧經過表面處理之粒子之凝聚體、或與分散劑共存之粒子之凝聚體
50‧‧‧螢光體
60‧‧‧覆膜
100、200‧‧‧發光裝置
圖1係本發明之一實施方式之發光裝置之概略俯視圖(a)、及其A-A剖面中之概略剖視圖(b)。
圖2係對抑制本發明之實施方式中之密封構件之潤濕擴散之原理進行說明之概略圖(a)及(b)。
圖3係表示本發明之一實施方式之發光裝置之密封構件中的經過表面處理之粒子之含量與向基體上表面之潤濕擴散之關係之曲線圖。
圖4係本發明之一實施方式之發光裝置之概略俯視圖(a)、及其B-B剖面中之概略剖視圖(b)。
圖5係本發明之一實施例之發光裝置之密封構件之邊緣部的利用掃描型電子顯微鏡觀察到之上表面觀察圖像。
圖6係圖5所示之密封構件之邊緣部之能量分散型X射線分析之資料。
圖7係圖5所示之密封構件之邊緣部的利用掃描型電子顯微鏡觀察到之剖面觀察圖像。
10‧‧‧基體(11:上表面、15:凹部、17:邊緣)
20‧‧‧發光元件
30‧‧‧密封構件
35‧‧‧密封構件之母材
40‧‧‧經過表面處理之粒子、或與分散劑共存之粒子
41‧‧‧經過表面處理之粒子之凝聚體、或與分散劑共存之粒子之凝聚體
50‧‧‧螢光體
100‧‧‧發光裝置
Claims (14)
- 一種發光裝置之製造方法,其具有以下步驟:準備基體、發光元件、及密封構件之步驟,上述基體之上表面具有凹部,上述凹部具備自凹部底面朝向上方且使凹部擴徑之傾斜,上述傾斜具備自凹部底面起算95°以上且120°以下之角度,上述密封構件含有粒徑為1nm以上且100nm以下之經過表面處理之粒子、直徑為100nm~300μm之上述粒子之凝聚體或吸附有分散劑之粒子;於上述凹部設置上述發光元件之步驟;及將上述密封構件填充於上述凹部並加熱之步驟,於上述填充並加熱之步驟中,藉由加熱上述密封構件,上述密封構件之邊緣部之一半以上形成處於上述凹部之邊緣附近、且上述粒子或上述粒子之凝聚體中之至少任一種偏集存在之區域,上述粒子為除螢光體之外之粒子。
- 如請求項1之發光裝置之製造方法,其中於上述填充並加熱之步驟後,上述粒子及/或上述粒子之凝聚體之含量為0.05wt%以上且50wt%以下。
- 如請求項2之發光裝置之製造方法,其中於上述填充並加熱之步驟後,上述粒子及/或上述粒子之凝聚體之含量為0.2wt%以上且2wt%以下。
- 如請求項1之發光裝置之製造方法,其中於上述填充並加熱之步驟後,上述粒子或上述粒子之凝聚體中之至少任一種亦存在於上述密封構件之外邊緣。
- 如請求項1之發光裝置之製造方法,其中於上述準備步驟中,上述基體之端面為經切斷之面。
- 如請求項5之發光裝置之製造方法,其中於上述準備步驟中,上述密封構件之母材為聚矽氧樹脂、改性聚矽氧樹脂、聚矽氧改性樹脂、或混成聚矽氧樹脂。
- 如請求項1之發光裝置之製造方法,其中於上述填充並加熱之步驟後,上述密封構件之上表面為向上方凸起之面。
- 如請求項1之發光裝置之製造方法,其中於上述填充並加熱之步驟後,上述密封構件之上表面為凹面。
- 如請求項1之發光裝置之製造方法,其中於上述準備步驟中,上述基體之上表面上形成有無機物之覆膜。
- 如請求項1之發光裝置之製造方法,其中於上述準備步驟中,上述密封構件之母材為苯基聚矽氧樹脂,上述粒子為氧化鋯。
- 如請求項1之發光裝置之製造方法,其中於上述填充並加熱之步驟後,上述密封構件之邊緣部之一半以上為處於上述凹部之邊緣附近,且上述粒子或上述粒子之凝聚體中之至少任一種偏集存在之區域。
- 如請求項1之發光裝置之製造方法,其中於上述準備步驟中,上述粒子為螢光體以外之粒子。
- 如請求項1之發光裝置之製造方法,其中於上述填充並加熱之步驟後,上述凹部之邊緣附近為上述凹部之內壁面與上表面之邊界部。
- 如請求項1之發光裝置之製造方法,其中於上述準備步驟中,上述密封構件中進而含有螢光體,於上述填充並加熱之步驟後,上述螢光體偏集存在於上述凹部之底面側。
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US20170162765A1 (en) | 2017-06-08 |
TWI668884B (zh) | 2019-08-11 |
CN104701441A (zh) | 2015-06-10 |
KR102222316B1 (ko) | 2021-03-04 |
US9653662B2 (en) | 2017-05-16 |
US9960326B2 (en) | 2018-05-01 |
EP2882001A1 (en) | 2015-06-10 |
JP6237174B2 (ja) | 2017-11-29 |
TW201528556A (zh) | 2015-07-16 |
TW201937758A (zh) | 2019-09-16 |
EP2882001B1 (en) | 2018-04-25 |
CN104701441B (zh) | 2018-09-11 |
JP2015109354A (ja) | 2015-06-11 |
US20150162509A1 (en) | 2015-06-11 |
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