WO2006035913A1 - 発光素子収納用パッケージおよび発光素子収納用パッケージの製造方法 - Google Patents
発光素子収納用パッケージおよび発光素子収納用パッケージの製造方法 Download PDFInfo
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- WO2006035913A1 WO2006035913A1 PCT/JP2005/018040 JP2005018040W WO2006035913A1 WO 2006035913 A1 WO2006035913 A1 WO 2006035913A1 JP 2005018040 W JP2005018040 W JP 2005018040W WO 2006035913 A1 WO2006035913 A1 WO 2006035913A1
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- WIPO (PCT)
- Prior art keywords
- emitting element
- light emitting
- light
- insulating substrate
- wiring pattern
- Prior art date
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present invention relates to a light emitting element housing package used for housing a light emitting element such as a light emitting diode (LED) and a method for manufacturing the light emitting element housing package.
- a light emitting element such as a light emitting diode (LED)
- a method for manufacturing the light emitting element housing package
- light-emitting elements such as light-emitting diodes have been widely used, for example, as light sources for light-emitting display boards, backlight light sources for mobile phones, computers, etc. due to the improvement in luminance.
- Such a light emitting device is used in a state of being housed in a light emitting device housing package for housing the light emitting device.
- a light emitting element storage package for accommodating such a light emitting element has a recess for accommodating the light emitting element on an upper surface of an insulating substrate formed by stacking one or more insulating layers. Forming.
- a power is supplied to the light emitting element so that an external electric circuit force is also supplied to form a wiring pattern layer that acts to emit light with a predetermined luminance.
- a transparent resin such as epoxy resin is placed in the recess.
- a light emitting device as a final product is manufactured by filling glass and hermetically sealing the light emitting element.
- a reflective layer is applied. This light reflecting layer brightens the light emitted from the light emitting element, making the characters and images displayed on the electric display board bright and extremely clear.
- gold, silver, nickel, aluminum, rhodium, platinum or the like is preferably used.
- a metallized metal layer is previously applied to the inner wall surface of the recess of the insulating substrate, Gold, silver, nickel, aluminum, rhodium, platinum, or the like is deposited on the metallized metal layer by a plating method, a vacuum deposition method, a sputtering method, or the like, so as to be deposited on the inner wall surface of the concave portion of the insulating substrate.
- the light reflecting layer is not provided on the entire inner wall surface of the recess, but is formed with a space between the bottom surface of the recess and the electric pattern between the light reflecting layer and the wiring pattern layer on the bottom surface of the recess. Effective short circuit prevention.
- the light emitting element storage package 100 of Patent Document 1 includes an insulating substrate 111 and a reflector frame 112 disposed on the outer peripheral portion of the insulating substrate 111, as shown in FIG.
- a light emitting element storage recess 119 is defined between the insulating substrate 111 and the reflector frame 112.
- a wiring through hole penetrating the insulating substrate 111 vertically.
- the through hole 116 for wiring is filled with a conductive member 117, and the wiring pattern layers 114, 115 on the upper and lower surfaces of the insulating substrate 111 are conducted through the conductive member 117, and the wiring pattern layer 114 on the upper surface is electrically connected.
- the light-emitting element 118 mounted on is electrically connected to an external electric circuit.
- the light-emitting element storage package 200 of Patent Document 2 Japanese Patent Laid-Open No. 8-274378
- FIG. 5 the light-emitting element storage of the insulating substrate 212 is performed.
- a wiring through-hole 216 extending from the lower side of the concave portion 219 to the lower surface of the insulating substrate 212 is formed through an intermediate wiring portion 213 formed at an intermediate position of the insulating substrate 212.
- the conductive member 217 is filled in the wiring through-hole 216, and the wiring pattern layers 214 and 215 on the upper and lower surfaces of the insulating substrate 212 are conducted through the conductive member 217, so that The light emitting element 218 mounted on the wiring pattern layer 214 is configured to be electrically connected to an external electric circuit.
- Patent Document 3 Japanese Patent Laid-Open No. 2003-37298
- Patent Document 4 Japanese Patent Laid-Open No. 2003-2734 05
- FIG. 3 11 No through-hole for wiring is provided, and it is placed between the reflector frame 312 and the insulating substrate 311.
- the wiring pattern layer 301 passes through the outer surface of the insulating substrate 311, the wiring pattern layers 314 and 315 attached to the upper and lower surfaces of the insulating substrate 311 are electrically connected through the wiring pattern layer 301.
- the light emitting element 318 mounted on the wiring pattern layer 314 on the upper surface can be electrically connected to an external electric circuit.
- Patent Document 1 JP 2002-232017
- Patent Document 2 JP-A-8-274378
- Patent Document 3 Japanese Patent Laid-Open No. 2003-37298
- Patent Document 4 Japanese Patent Laid-Open No. 2003-273405
- the light emitting element housing recesses 119 and 219 are directly penetrated from above and below the insulating substrates 111 and 211, respectively.
- Wiring through-holes (so-called via holes) 116 and 216 are provided.
- the via hole and the wiring pattern electrically connected to the via hole are mainly composed of a refractory metal such as tungsten in a through hole formed in the green sheet by a method such as punching.
- the conductive paste is screen printed so as to block the exposed surface of the filling portion, and a pattern is formed at a predetermined position, followed by force degreasing and sintering (firing). Is common.
- the wiring pattern layer 301 passes through the outer surface of the substrate in this way, there is a case where wiring is concentrated on a part and a complicated wiring pattern layer must be used. In addition, this complicated wiring pattern layer increases the time required for circuit design and is part of the factor that raises development costs.
- a substrate having a wiring pattern layer passing through the surface first has a through hole formed in the substrate (or a green sheet as a precursor thereof), and then a paste containing a refractory metal on the inner wall of the through hole is about 15 m thick.
- the metal paste is sintered by the co-fire method, and then the surface is cut and then the substrate is cut along the plane passing through the center of the through hole. In this case, two substrates are obtained at a time by cutting).
- the thickness of the wiring pattern layer 301 is comparatively thin at about 20 m even if the thickness of the thickness is added, so that the electric resistance is large. As a result, a large current cannot be passed through the light emitting element 318, resulting in a decrease in luminance.
- the exposed surface is formed of a plating layer, in the above manufacturing method, plating is performed in advance so that the plating layer is exposed when the through hole is cut from the viewpoint of efficiency. .
- the present invention is for connecting a light-emitting element and a light-emitting element, in which when the light-emitting element is mounted, a part of the light-emitting element is not displaced, disconnected, disconnected, or poorly connected.
- a light emitting element storage package that can securely connect the wiring pattern layer, and that some of the headlights, lighting fixtures, etc. on which the light emitting elements are mounted do not light up. It is an object of the present invention to provide a method for efficiently manufacturing a light emitting element storage package.
- the present invention provides a light-emitting element storage package having a wiring pattern layer that can be conducted to a light-emitting element without using a complicated wiring pattern layer, and also provides a light-emitting element storage package. It aims at providing the manufacturing method of.
- an object of the present invention is to provide a method for manufacturing a light emitting element storage package that can simplify circuit design of the wiring pattern layer, reduce development cost, and can be manufactured at low cost.
- the present invention provides a light-emitting element storage package that can flow a large current to the light-emitting element and improve luminance, and also provides a method for manufacturing the light-emitting element storage package. With the goal.
- the present inventors consider that when the via hole is provided below the reflector frame in the light emitting element storage package, the above-described problems in the prior art are solved.
- the wiring through hole is provided in the insulating substrate below the light emitting element housing recess for housing the element, for the reasons described above, the wiring pattern layer for connecting the light emitting element, particularly the wiring through hole below the wiring pattern layer Concavities and convexities are generated in the wiring pattern layer in the region where there is. Therefore, the flatness of the wiring pattern for connecting the light emitting element located in the concave portion for storing the light emitting element ⁇ in the present invention, the flatness is the wiring pattern exposed on the surface.
- the portion where the irregularities are generated due to the formation of the wiring through hole is always located below the part of the reflector.
- the exposed portion of the wiring pattern for connecting the light-emitting element that is actually bonded to the light-emitting element has a flatness of less than ZO. Can be connected to.
- the wiring pattern layer in the light emitting element housing recess that is electrically connected to the light emitting element may be partly displaced or detached from the light emitting element without being affected by the distortion.
- the light emitting element that does not cause disconnection or poor conduction can be securely connected to the wiring pattern layer for connecting the light emitting element, and there is no problem that a part of the headlight, lighting fixture or the like on which the light emitting element is mounted does not light. .
- the light-emitting element storage package in which the via hole is provided below the reflector frame is considered to have many excellent characteristics. Therefore, the present inventors have developed a light-emitting device having such a structure. We have intensively studied how to efficiently manufacture the device storage package.
- the light emitting element storage package of the present invention is
- a light emitting element housing package in which the light emitting element is mounted on the wiring pattern layer for connecting the light emitting element in the light emitting element housing recess,
- a wiring through-hole located below the reflector frame of the insulating substrate and formed so as to penetrate through the insulating substrate;
- a light-emitting element connection wiring pattern layer formed on an upper surface of the insulating substrate and electrically connected to the conductive portion;
- the method for manufacturing the light emitting element storage package of the present invention includes:
- a through-hole for wiring is formed so as to be positioned below the ceramic reflector frame (b), and a conductive paste layer serving as the wiring pattern for connecting the light-emitting elements is formed on the upper surface and the lower surface, respectively.
- a step of preparing a substrate green sheet comprising a green sheet on which a conductive paste layer to be the supply wiring pattern layer is formed,
- step D A step of heating and degreasing and sintering the laminate obtained in the step C.
- the light emitting element storage package and the method for manufacturing the light emitting element storage package of the present invention for example, at a position corresponding to the lower side of the reflector frame of the green sheet for the substrate that forms the base of the insulating substrate. Then, through holes for wiring are formed so as to penetrate the upper and lower sides of the insulating substrate by punching or the like.
- the wiring through-holes of the insulating substrate thus formed are filled with, for example, a metallized paste such as tungsten paste by press-fitting and the like, and the same metallized paste is applied to the upper surface and the mask of the insulating substrate by, for example, screen printing.
- Printing is performed to form paste layers that respectively serve as a wiring pattern layer for connecting light emitting elements and a wiring pattern layer for supply
- a plate-like green sheet is punched out, for example, by punching to form a hole, and a metallized paste is applied to the inner wall surface of the hole to thereby lift the refrigeration.
- a metallized paste is applied to the inner wall surface of the hole to thereby lift the refrigeration.
- the green sheet for the substrate and the green sheet for forming the reflector frame are laminated via the paste layer containing the ceramic powder, and are bonded so as to form the recess for housing the light emitting element.
- the paste layer containing the ceramic powder In order to interpose the paste between the two green sheets, it is only necessary to apply the paste to the joining surface of one of the green sheets. However, this paste need not necessarily be applied when the two green sheets are joined. For example, apply paste to the bottom surface (surface to be joined) of the green sheet for forming the reflector frame before drilling holes.
- the ceramic substrate and the reflector frame can be integrated, and a light emitting element storage package having a light emitting element storage recess can be obtained.
- a light-emitting element housing package capable of emitting light emitted from the light-emitting element housed in the concave portion to the outside uniformly and efficiently by the light reflecting layer on the inner wall of the reflector frame, and A method for manufacturing a light emitting element storage package can be provided.
- the wiring through hole is included in the reflector frame of the insulating substrate. If it is located 200 m or more outside the side surface and 200 m or more inside the outside surface of the reflector frame, the wiring through hole is formed in the vicinity of the wiring through hole. Even if irregularities occur, the flatness of the wiring pattern layer for connecting the light-emitting / emitting element at the lower part of the recess for storing the light-emitting element can be more reliably set to less than 5 m ZO.
- the insulating substrate, and further the insulating substrate and the reflector frame are made of nitride ceramics, particularly aluminum nitride ceramics, It is preferable to use at least one kind of ceramic selected from silicon nitride ceramics and boron nitride.
- nitride ceramics Since the thermal conductivity of the dust is relatively good, the heat from the light emitting element is radiated to the outside without being stored in the light emitting element storage package, and the risk of damage to the light emitting element due to heat Decreases.
- aluminum nitride ceramics are the most preferred because of their excellent heat dissipation with a thermal conductivity of 170 WZm'K or higher.
- the light-emitting element and the wiring pattern layer for connecting the light-emitting element that does not cause a part of the light-emitting element to be shifted, disconnected, disconnected, or poorly connected are reliably provided.
- a wiring pattern layer capable of conducting to a light emitting element without using a complicated wiring pattern layer is provided. The light emitting element storage package can be efficiently manufactured.
- the through hole for wiring does not substantially exist in the lower part of the light emitting element, and the lower part of the light emitting element can be made of ceramics having high thermal conductivity. It becomes possible to raise.
- the circuit design of the wiring pattern layer can be simplified, the development cost can be reduced, and the light emitting element storage package can be manufactured at a low cost.
- FIG. 1 is a cross-sectional view showing an embodiment of a light emitting element storage package according to the present invention.
- FIG. 2 is a cross-sectional view showing another embodiment of the light emitting element storage package of the present invention.
- FIG. 3 is a cross-sectional view for each step for explaining the manufacturing method of the present invention for manufacturing the light emitting element storage package of the present invention.
- FIG. 4 is a cross-sectional view showing an example of a conventional light emitting element storage package.
- FIG. 5 is a cross-sectional view showing another embodiment of a conventional light emitting element storage package.
- FIG. 6 is a cross-sectional view showing another embodiment of a conventional light emitting element storage package. Explanation of symbols
- FIG. 1 is a cross-sectional view showing a first embodiment of a light emitting element storage package according to the present invention.
- 10 indicates a light emitting element storage package 10 according to the present invention as a whole.
- the light emitting element storage package 10 includes a ceramic rectangular insulating plate 11 having a substantially square plate shape, and a ceramic reflector frame 12 bonded to the upper surface of the outer periphery of the insulating substrate.
- the insulating substrate 11 and the reflector frame 12 define a light emitting element housing recess 19 for housing the light emitting element 18 at the center thereof.
- the insulating substrate 11 configured as described above functions as a support for supporting the light emitting element 18, and has a light emitting element accommodating recess 19 for accommodating the light emitting element 18 on the upper surface thereof. .
- a known ceramic material can be used for the insulating substrate 11, for example, (0 acid-aluminum-based ceramics, acid-silicon-ceramics, acid-calcium-based ceramics, acid-magnesium-based ceramics) Acid ceramics such as GO aluminum nitride ceramics, nitride nitride ceramics, boron nitride and other nitride ceramics; (m) Use oxide beryllium, silicon carbide, mullite, borosilicate glass, etc. It is a ceramic sintered body obtained by sintering these ceramic materials.
- nitride ceramics such as aluminum nitride ceramics, silicon nitride ceramics, boron nitride ceramics, especially aluminum nitride ceramics, and light emitting element power with relatively high thermal conductivity. This is desirable because it can dissipate heat well.
- a supply wiring pattern layer 15 for electrical connection such as a circuit board (not shown) is deposited on the lower surface of the insulating substrate 11.
- the supply wiring pattern layer 15 has a plurality of pattern layer forces that are independent (not electrically connected to each other!).
- the number is the same as the number of electrodes of the light-emitting element 18 to be accommodated (normally two light-emitting elements per one light-emitting element).
- the supply wiring pattern layer 15 may be disposed only on a plane, or may be formed on a plane and an end surface to facilitate soldering, or may be connected by a solder bump. It ’s okay to get puttered for that.
- a light emitting element connecting wiring pattern layer 14 is formed on the upper surface of the insulating substrate 11 so that the outer edge portion force reaches the light emitting element housing recess 19.
- the light emitting element connection wiring pattern 14 also has a plurality of pattern layer forces that are independent (not electrically connected to each other), and the number of the light emitting element connecting wiring patterns 14 is the number of electrodes of the light emitting element 18 accommodated (light emitting element). It is the same as 2).
- the insulating substrate 11 at a position below the reflector frame 12 is formed with a wiring through hole 16 penetrating through the upper and lower surfaces.
- the wiring through-hole 16 is filled with a conductive member 17 to form a conductive portion 22, and the light-emitting element connecting wiring pattern layer 14 and the supply wiring pattern layer 15 are connected via the conductive portion 22. It is designed to be electrically conductive.
- a conductive circuit is formed from the supply wiring pattern layer 15 to the conductive portion 22 and the light emitting element connection wiring pattern layer 14. Then, in the light emitting element housing recess 19 inside the light emitting element housing package 10, the light emitting element connecting wiring pattern layer 14 is formed through the bump electrode 20 by, for example, ultrasonic welding, etc. The light-emitting element 18 is electrically connected (mounted)!
- the number of light-emitting elements 18 to be mounted may be determined as appropriate, but it is preferably 1 to 4, particularly 1 or 2.
- one light emitting element connecting wiring pattern 14 for each electrode force of the light emitting element 18 is provided so that a short circuit does not occur when current is applied. Connected.
- the distance L1 of the inner surface force of the reflector frame 12 is preferably 200 ⁇ m or more, more preferably 500 ⁇ m, as the position where the wiring through hole 16 is formed.
- the distance L2 from the outer surface of the reflector frame 12 is preferably 200 m or more, more preferably 500 m or more. Is desirable.
- the diameter of the through-hole 16 for wiring is preferably 50 ⁇ m to 500 ⁇ m, and more preferably 100 to 200 / ⁇ ⁇ . A relatively large current of 0.1 to 5 amperes can be passed, and the luminance of the light emitting element 18 can be improved.
- the shape of the through-hole 16 for wiring can be appropriately selected according to the required energization amount, such as an elliptical shape or a rectangular shape as well as being provided by a substantially circular shape, which is not particularly limited. . Further, the number of wiring through holes 16 is not particularly limited, and may be appropriately selected according to the energization amount. Further, there is no problem even if the wiring through hole 16 and the wiring pattern layer 301 are disposed in the same package for soldering.
- one light emitting element connection wiring pattern 14 and one supply wiring pattern layer 15 are joined by two or more, preferably 2 to 6 conductive members 17.
- the package of the present invention when a plurality of wiring through holes 16 are formed for one light emitting element connecting wiring pattern, all the wiring through holes 16 are located below the bottom surface of the light emitting element housing recess 19. Will not exist. For this reason, when the lower part of the light-emitting element housing recess 19 is made of a ceramic material having a high thermal conductivity, it is more preferable because the heat conductivity is higher than that of the refractory metal, and the heat dissipation is improved.
- each L1 is preferably 200 m or more, particularly 500 ⁇ m or more.
- the conductive member 17 is made of, for example, a metal such as tungsten, molybdenum, copper, or silver.
- a conductive paste containing powder of these metals is filled into the through-hole 16 for wiring by printing, press-fitting, or the like. By heating, the conductive part 22 is formed.
- a high melting point metal force such as tungsten.
- the same material as that of the conductive member 17 can be used as a material constituting the light emitting element connection wiring pattern layer 14 and the supply wiring pattern layer 15, the same material as that of the conductive member 17 can be used.
- a method for forming the wiring pattern layer 14 for connecting the light emitting element and the wiring pattern layer 15 for supply is not particularly limited.
- the conductive layer containing a refractory metal such as tungsten on an insulating substrate for example, conductive Sex pace After pattern printing, a refractory metal layer is formed by simultaneous firing and nickel, silver, or gold plating is applied thereon; a metal thin film pattern is formed on a GO insulating substrate by sputtering
- a known pattern forming method can be employed.
- a metal having excellent corrosion resistance such as nickel or gold
- the conductive member 17 will be oxidized and corroded. Can be effectively prevented, and the connection between the light emitting element connecting wiring pattern layer 14 and the light emitting element 18 can be strengthened. Therefore, the nickel plating layer and the gold plating layer are usually deposited sequentially on the surface of the light emitting element connecting wiring pattern layer 14 by the electrolytic plating method or the electroless plating method.
- the reflector frame 12 is made of a ceramic material having the same composition as or different from that of the insulating substrate 11, and is integrally sintered on the upper surface of the insulating substrate 11.
- the reflector frame 12 has a substantially circular or substantially rectangular through hole 19a for accommodating the light emitting element 18 at the center, and the light emitting element is formed from the insulating substrate 11 and the reflector frame 12 by the through hole 19a.
- a storage recess 19 is formed.
- the shape of the through hole 19a is not determined, but if it is substantially circular, the light emitted from the light emitting element 18 accommodated in the through hole 19a is uniformly distributed in all directions on the inner wall of the substantially circular through hole 19a. It is preferable because it can be reflected and emitted to the outside uniformly.
- a metallized metal layer formed by applying a metal powder paste such as tungsten, molybdenum, copper or silver,-nickel metal
- a light reflecting layer 13 is formed by coating a metallic layer such as.
- the light reflecting layer 13 is attached to the bottom surface of the light emitting element housing recess 19 which is not attached to the entire inner wall of the through hole 19a of the reflector frame 12 with a predetermined interval. It is desirable to form it in order to prevent short circuit due to contact with the wiring pattern layer 14 for connecting light emitting elements.
- the light metal layer force in the light reflecting layer 13 functions as a reflecting material that reflects and disperses the light emitted from the light emitting element 18 housed in the through hole 19a, that is, in the light emitting element housing recess 19.
- the constituent material of the light reflection layer is not limited to these metals, and a metal such as aluminum may be deposited by vapor deposition, or it may be a high substance other than a metal. Those having light reflectivity, such as white rosin, can also be used.
- vapor deposited metal or white resin as a material for the light reflecting layer, it is not particularly necessary to form a refractory metal such as tungsten on the base, for example, even if the metal is directly deposited on the ceramic. You can also glue the white resin layer with an adhesive! / ⁇ .
- the angle ⁇ of the light reflecting layer 13 is changed as appropriate, and is combined with the use situation. It is preferable to reflect light.
- the reflector surface frame 12 is formed in a tapered surface inclined inwardly on the inner surface force of the reflector frame 12.
- the angle ⁇ formed by the tapered surface 23 inside the reflector frame 12 and the wiring pattern layer 14 for connecting the light emitting element is good for the light emitted from the light emitting element 18 to the outside. In order to reflect the light, it is desirable to set it to 45 to 75 degrees.
- the degree of reflection of the light emitted by the light emitting element 18 differs depending on the mounting location and use, and therefore, by appropriately adjusting the angle ⁇ , the light emitting element can be accommodated according to the use situation.
- Package can be provided.
- the light emitting element storage package 10 of the present invention configured as described above is formed on the light emitting element connection wiring pattern layer 14 in the light emitting element storage recess 19 of the insulating substrate 11, for example, the plate electrode 21.
- the light-emitting element 18 is mounted (mounted) so as to be electrically connected to the light-emitting element housing recess 19 in which the light-emitting element 18 is accommodated, and a transparent resin such as epoxy resin or silicone resin is used.
- a light-emitting device is obtained by sealing the light-emitting element 18 in an air-tight manner by filling the resin and appropriately embedding a fluorescent material or the like in the sealing resin and arranging a lens or the like.
- connection between the light emitting element connecting wiring pattern layer 14 and the light emitting element 18 is performed by, for example, applying a bump electrode to the light emitting element 18 by ultrasonic welding.
- the light emitting element 18 was bonded to the insulating substrate 11 in advance using a force adhesive for connecting to the wiring pattern layer with the wiring surface down, and the terminals of the light emitting element 18 and the upper surface of the insulating substrate 11 were attached.
- the light emitting element connecting wiring pattern layer 14 may be connected by, for example, a bonding wire such as a gold wire.
- An electrode (supply electrode) for electrical connection with the circuit board may be formed on the lower surface of the supply wiring pattern layer 15.
- the number of electrodes is not particularly limited, and may be determined as appropriate according to the circuit pattern of the circuit board.
- the supply electrode is formed on the supply wiring pattern layer 15, it is preferable to form an insulating layer on the portion without forming the electrode of the supply wiring pattern layer 15.
- 3A to 3C are cross-sectional views for each process showing a manufacturing method for manufacturing the light-emitting element storage package shown in FIG.
- a substrate green sheet l la3 and a reflector to be a precursor of the insulating substrate 11 meaning a raw material substrate that will eventually become the insulating substrate 11.
- a reflector single-frame green sheet 12a3 to be a precursor of the frame body 12 (which means a raw material substrate that will eventually become the insulating substrate 12) is prepared.
- the green sheet for substrate l la3 is prepared as shown in FIGS. 3 (A) a 1 to a 3. That is, as shown in al, a plate-shaped green sheet l lal is prepared as a base of the insulating substrate 11.
- Such green sheet l lal is made from ceramic raw material powder and sintering aid, organic solvent such as alcohol, toluene, suitable organic binder, plasticizer such as glycerin compound, dispersant, etc. Is added to and mixed to form a mud-like shape, and this is made into a sheet shape having a necessary thickness by a sheet forming technique such as a doctor blade method.
- these raw materials used for preparing a green sheet substances usually used in the production of green sheets in the field of ceramics can be used without particular limitation. That is, a known ceramic powder can be used as the ceramic raw material powder.
- Nitride ceramics such as aluminum nitride ceramics, silicon nitride ceramics, boron nitride ceramics; (m) acid beryllium, Silicon carbide, alumina, mullite, nitriding Powders such as boron and borosilicate glass can be used.
- nitride ceramic powders such as aluminum nitride ceramics, silicon nitride ceramics, and boron nitride ceramics. These ceramic powders are generally used together with commonly used sintering aids depending on the type.
- organic binder polybutylbutyral, ethylcelluloses, and attalyl resin are used, so that the green sheet has good moldability.
- Poly n-butyl methacrylate, polyvinyl Butyral is particularly preferably used.
- a nitride formed by using a nitride ceramic powder containing a sintering aid as a ceramic raw material powder as a ceramic powder is preferable to use.
- a green sheet for ceramics particularly a green sheet for aluminum nitride using an aluminum nitride powder containing a sintering aid (for example, yttria or strong lucia) as a raw material powder.
- a wiring through-hole 16 extending from the upper surface to the lower surface of the insulating substrate 11 is provided at a position corresponding to a position below the reflector frame 12 in the green sheet, and a punching die is attached. Use to punch.
- each L1 is preferably 200 ⁇ m or more, particularly 500 ⁇ m or more.
- the conductive paste 17a for the conductive member 17 is inserted into the wiring through-hole 16 of the green sheet lla2 having the wiring through-hole 16 by, for example, press-fitting or screen printing.
- a conductive paste layer 15 ′ serving as a wiring pattern layer 15 for electrical connection such as a circuit board (not shown) is provided on the lower surface of the insulating substrate 11, and an outer edge portion is provided on the upper surface of the insulating substrate 11.
- a conductive paste layer 14 ′ to be a light-emitting element connecting wiring pattern layer 14 is formed on each of the light-emitting element housing recesses 19 by printing and applying to a necessary wiring pattern by, for example, a screen printing method.
- the formation of the light emitting element connecting wiring pattern layer 14 and the supplying wiring pattern layer 15 is, for example, (0 refractory metal formed after sintering (simultaneous firing) in step C described later) (Ii)
- a refractory metal layer is formed on the insulating substrate by the co-firing method in the same manner as described above, and a metal thin film pattern is formed thereon by the sputtering method. It is possible to adopt a known pattern forming method such as
- the green sheet 12a3 for the reflector frame can be prepared as shown in FIG. 3 (B) bl to b3. That is, as shown in bl, prepare a plate-shaped liner sheet 12al which is the base of the reflector frame.
- the green sheet can be prepared in the same manner as the green sheet l lal. There are no particular limitations on the type and amount of the various components including the ceramic powder used at this time, but it is preferable that the adhesive viewpoint power is the same as that when the green sheet l lal is prepared.
- the through hole 19a for the light emitting element housing recess 19 is punched out into the green sheet 12al using a punching die.
- the inner wall of the through hole 19a formed in the ceramic green sheet 12a2 for the reflector frame 12 is tapered from one surface of the ceramic green sheet 12a to the other surface.
- the inner wall of the through hole 19a of the reflector frame 12 is It can be formed so as to spread outward at a fixed angle with respect to the upper surface of the insulating substrate 11.
- the metal paste 13a for the light reflecting layer 13 is printed on the inner wall of the through hole 19a by the same screen printing method.
- the substrate green sheet lla3 and the reflector frame green sheet 12a3 prepared in this way may be joined. In this case, any joining method may be used. However, as shown in FIG. It is preferable to laminate with a “containing paste” (hereinafter also referred to as “adhesive paste”) interposed.
- a “containing paste” hereinafter also referred to as “adhesive paste”.
- a ceramic powder in which an organic solvent, an organic binder, a plasticizer, a dispersant, and the like are added and mixed is preferably used. These components are used when preparing green sheet lal for substrates and green sheet 12al for frames. Force that can be used without limitation With regard to the ceramic powder, it is preferable to use the one used when preparing any of these green sheets.
- the other components are preferably the same, but from the viewpoint of printability and adhesiveness, it is preferable to add a large amount of organic solvent and make the viscosity at 25 ° C 500P to 5000P.
- the method of interposing the adhesive paste between the two green sheets is not particularly limited. If V ⁇ provides operability and a reliable adhesion effect! It is preferable to employ a method in which the two are joined after being applied to the joint surface of 2a3. As a coating method, it is preferable to employ a printing method because a uniform film thickness can be obtained. In addition, when laminating the green sheet for the frame and the green sheet for the substrate, as a method of aligning the adhesive paste more easily, the adhesive paste is entirely on the plate-shaped green sheet before the reflector frame is formed.
- the thickness of the adhesive layer is preferably 30 to 400%, particularly 100 to 300% of the thickness of the conductive paste layer to be the light emitting element connecting wiring pattern formed in the step A. is there.
- the conductive paste layer is provided below the green sheet 12a3 for frame at the time of joining.
- both the green sheets are stacked and heated at a temperature of about 60 to 140 ° C while being heated to 10K Pa ⁇ 1 It is preferable to crimp with a pressure of about OOKPa!
- the laminated body thus obtained is heated by degreasing the green body by heating the green body and the conductive pastes 17a and 13a applied thereto at a high temperature as shown in c2.
- a sintered body in which the insulating substrate 11 and the reflector frame 12 are integrated with each other is obtained.
- the degreasing of the green body is performed by oxidizing gas such as oxygen and air, reducing gas such as hydrogen, inert gas such as argon and nitrogen, carbon dioxide, and a mixture thereof. This is performed by heat-treating the green body in a humidified gas atmosphere mixed with gas or water vapor. Degreasing is performed at a temperature depending on the type and amount of organic components contained in the green body.
- retention time 1 minute to 1000 minutes may be selected as appropriate.
- the conditions normally employed are appropriately employed depending on the type of green sheet (more specifically, the type of ceramic powder used as the raw material).
- a green sheet for aluminum nitride a green sheet containing aluminum nitride-um powder as a main component of inorganic components
- the temperature may be calcined for 1 to 20 hours, preferably 2 to LO time.
- an atmosphere for this sintering it may be performed at normal pressure in an atmosphere of non-oxidizing gas such as nitrogen gas.
- the thermal conductivity of the sintered body thus sintered can be 170 WZm * K or more, and further limited to 200 WZm'K if the conditions are further limited.
- the conductive portion of this sintered body that is, the exposed surfaces of the light emitting element connecting wiring pattern layer 14 and the supplying wiring pattern layer 15 are appropriately plated by electrolytic plating or electroless plating.
- a metal layer such as gold, platinum, noradium, rhodium, silver, or aluminum or a vapor-deposited metal layer, the light-emitting element storage package shown in FIG. 1 is completed.
- the present invention is not limited to the above-described embodiment, and is preferably used by changing it appropriately according to individual usage conditions.
- a large green sheet in which a plurality of green sheets for a substrate and a green sheet for a reflector frame are connected to each other (a green sheet pattern for a plurality of substrates or a single green sheet) It is preferable to use a method in which a green sheet pattern for a reflector frame is prepared, the two are joined, degreased and sintered, and a plurality of packages are cut out. Such a mode is of course included in the method of the present invention.
- a through hole 16 having a diameter of ⁇ ⁇ . 2 mm was formed in the substrate green sheet l lal using a punching die, and the through hole 16 was filled with a tungsten paste. After that, the same tank stainless paste is printed on the upper and lower surfaces of the green sheet for substrates (thickness 15 m), and paste layers (conductive paste layer 14 'and conductive paste layer 15' covering both exposed end faces of the through holes) are printed. ) To obtain a green sheet for substrate l la3.
- the through hole 16 is formed at a position (a position below the frame body) that is covered with the bottom surface of the green sheet when the green sheet 12a3 for the reflector frame having the hole 19a is stacked. Part of the conductive paste layer 14 ′ was formed so as to be located below the hole 19 a (that is, exposed at the bottom surface of the light emitting element housing recess 19).
- the green sheet 12a3 for the reflector frame was aligned and laminated on the green sheet for substrate lla3 thus produced.
- the laminated molded body was heat degreased at 850 ° C. for 2 hours in a hydrogen gas atmosphere containing moisture.
- sintering was performed by heating at 1800 ° C for 5 hours in a nitrogen atmosphere.
- Ni plating and Au plating were sequentially formed on the tungsten metallized layer of the sintered body taken out after cooling, and the light emitting element storage package of the present invention was manufactured.
- a light-emitting element connection wiring pattern layer 14 exposed on the bottom surface of the light-emitting element housing recess 19 was used for wire-bonding with a wire bonding apparatus using a ⁇ 25 ⁇ m Au wire, and then used in a tensile testing machine. The strength (strength at the time of wire breakage) was measured and it was 8-12 g.
- Example 1 the position where the through-hole 16 is formed is the position below the hole 19a of the reflector sheet green sheet 12a3 when the reflector sheet frame green sheet 12a3 is stacked (that is, the light emitting element housing recess 19 bottom surface).
- the light emitting element storage package was manufactured in the same manner except that the light emitting element storage package was formed.
- the obtained package was evaluated in the same manner as in Example 1. As a result, the flatness of the light emitting element connection wiring pattern layer 14 exposed on the bottom surface of the light emitting element housing recess 19 was 7 to 15 m. . Further, although wire bonding was used in the same manner as in Example 1, the wire could not be connected to the metallized portion.
- a package was obtained in the same manner as in Example 1, except that the green sheet for substrate and the reflector frame were joined without using an adhesive base.
- a package obtained using a cutting machine having a diamond blade was cut vertically, and the cross section was observed with an SEM. As a result, voids were observed at the joint surface between the substrate and the reflector frame.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112005002419T DE112005002419T5 (de) | 2004-09-30 | 2005-09-29 | Gehäuse für die Aufnahme eines lichtemittierenden Elements und Verfahren zur Herstellung eines Gehäuses für die Aufnahme eines lichtemittierenden Elements |
US11/664,181 US7718456B2 (en) | 2004-09-30 | 2005-09-29 | Package for housing light-emitting element and method for manufacturing package for housing light-emitting element |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004286971A JP4659421B2 (ja) | 2004-09-30 | 2004-09-30 | 発光素子収納用パッケージの製造方法 |
JP2004-286971 | 2004-09-30 |
Publications (1)
Publication Number | Publication Date |
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WO2006035913A1 true WO2006035913A1 (ja) | 2006-04-06 |
Family
ID=36119060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2005/018040 WO2006035913A1 (ja) | 2004-09-30 | 2005-09-29 | 発光素子収納用パッケージおよび発光素子収納用パッケージの製造方法 |
Country Status (4)
Country | Link |
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US (1) | US7718456B2 (ja) |
JP (1) | JP4659421B2 (ja) |
DE (1) | DE112005002419T5 (ja) |
WO (1) | WO2006035913A1 (ja) |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0945965A (ja) * | 1995-07-26 | 1997-02-14 | Nichia Chem Ind Ltd | セラミックスledパッケージおよびその製造方法 |
JPH11214582A (ja) * | 1998-01-27 | 1999-08-06 | Sumitomo Metal Electronics Devices Inc | セラミックス基板およびその製造方法 |
JPH11220178A (ja) * | 1998-01-30 | 1999-08-10 | Rohm Co Ltd | 半導体発光装置 |
JP2002232017A (ja) * | 2001-01-30 | 2002-08-16 | Kyocera Corp | 発光素子収納用パッケージおよびその製造方法 |
JP2004152952A (ja) * | 2002-10-30 | 2004-05-27 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
JP2004335495A (ja) * | 2003-03-12 | 2004-11-25 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
JP2005166937A (ja) * | 2003-12-02 | 2005-06-23 | Toyoda Gosei Co Ltd | 発光装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0343750U (ja) * | 1989-09-04 | 1991-04-24 | ||
JPH08274378A (ja) | 1995-03-30 | 1996-10-18 | Kyocera Corp | 発光素子収納用パッケージ |
JP2003037298A (ja) | 2001-07-25 | 2003-02-07 | Stanley Electric Co Ltd | 面実装型ledランプ |
JP2003273405A (ja) * | 2002-03-19 | 2003-09-26 | Kyocera Corp | 発光素子収納用パッケージ |
JP2004022895A (ja) * | 2002-06-18 | 2004-01-22 | Kyocera Corp | 発光素子搭載用基板 |
-
2004
- 2004-09-30 JP JP2004286971A patent/JP4659421B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-29 US US11/664,181 patent/US7718456B2/en not_active Expired - Fee Related
- 2005-09-29 DE DE112005002419T patent/DE112005002419T5/de not_active Withdrawn
- 2005-09-29 WO PCT/JP2005/018040 patent/WO2006035913A1/ja active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0945965A (ja) * | 1995-07-26 | 1997-02-14 | Nichia Chem Ind Ltd | セラミックスledパッケージおよびその製造方法 |
JPH11214582A (ja) * | 1998-01-27 | 1999-08-06 | Sumitomo Metal Electronics Devices Inc | セラミックス基板およびその製造方法 |
JPH11220178A (ja) * | 1998-01-30 | 1999-08-10 | Rohm Co Ltd | 半導体発光装置 |
JP2002232017A (ja) * | 2001-01-30 | 2002-08-16 | Kyocera Corp | 発光素子収納用パッケージおよびその製造方法 |
JP2004152952A (ja) * | 2002-10-30 | 2004-05-27 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
JP2004335495A (ja) * | 2003-03-12 | 2004-11-25 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
JP2005166937A (ja) * | 2003-12-02 | 2005-06-23 | Toyoda Gosei Co Ltd | 発光装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007150228A (ja) * | 2005-11-02 | 2007-06-14 | Trion:Kk | 発光ダイオード実装基板 |
JP2016072475A (ja) * | 2014-09-30 | 2016-05-09 | 日亜化学工業株式会社 | セラミックスパッケージ、発光装置及びそれらの製造方法 |
Also Published As
Publication number | Publication date |
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JP4659421B2 (ja) | 2011-03-30 |
DE112005002419T5 (de) | 2007-08-16 |
JP2006100688A (ja) | 2006-04-13 |
US7718456B2 (en) | 2010-05-18 |
US20080023713A1 (en) | 2008-01-31 |
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