WO2004094704A2 - Creuset pour un dispositif de fabrication d’un bloc de materiau cristallin et procede de fabrication - Google Patents
Creuset pour un dispositif de fabrication d’un bloc de materiau cristallin et procede de fabrication Download PDFInfo
- Publication number
- WO2004094704A2 WO2004094704A2 PCT/FR2004/000894 FR2004000894W WO2004094704A2 WO 2004094704 A2 WO2004094704 A2 WO 2004094704A2 FR 2004000894 W FR2004000894 W FR 2004000894W WO 2004094704 A2 WO2004094704 A2 WO 2004094704A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crucible
- side walls
- thermal
- crystalline material
- block
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S65/00—Glass manufacturing
- Y10S65/08—Quartz
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
Abstract
Description
Claims
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04742479A EP1613795B2 (fr) | 2003-04-17 | 2004-04-09 | CREUSET POUR UN DISPOSITIF DE FABRICATION D’UN BLOC DE MATERIAU CRISTALLIN ET PROCEDE DE FABRICATION |
JP2006505792A JP4607096B2 (ja) | 2003-04-17 | 2004-04-09 | 結晶質塊生成装置用るつぼおよびその生成方法 |
PL04742479T PL1613795T5 (pl) | 2003-04-17 | 2004-04-09 | Tygiel do urządzenia służącego do wytwarzania bloku materiału krystalicznego i sposób produkcji |
DE602004004095T DE602004004095T3 (de) | 2003-04-17 | 2004-04-09 | Tiegel für eine vorrichtung zur herstellung eines kristallinen blockes, und verfahren zu seiner herstellung |
US10/550,456 US7442255B2 (en) | 2003-04-17 | 2004-04-09 | Crucible for a device for producing a block of crystalline material and method for producing same |
BRPI0409464-6A BRPI0409464A (pt) | 2003-04-17 | 2004-04-09 | cadinho para um dispositivo para produzir um bloco de material cristalino e processo para sua produção |
NO20055454A NO20055454L (no) | 2003-04-17 | 2005-11-17 | Smeltedigel til en innretning for a produsere en blokk av krystallinsk materiale og en fremgangsmate for a produsere denne |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0304803A FR2853913B1 (fr) | 2003-04-17 | 2003-04-17 | Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication |
FR03/04803 | 2003-04-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004094704A2 true WO2004094704A2 (fr) | 2004-11-04 |
WO2004094704A3 WO2004094704A3 (fr) | 2004-12-16 |
Family
ID=33041932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2004/000894 WO2004094704A2 (fr) | 2003-04-17 | 2004-04-09 | Creuset pour un dispositif de fabrication d’un bloc de materiau cristallin et procede de fabrication |
Country Status (14)
Country | Link |
---|---|
US (1) | US7442255B2 (fr) |
EP (1) | EP1613795B2 (fr) |
JP (1) | JP4607096B2 (fr) |
CN (1) | CN100429333C (fr) |
AT (1) | ATE350519T1 (fr) |
BR (1) | BRPI0409464A (fr) |
DE (1) | DE602004004095T3 (fr) |
ES (1) | ES2279402T5 (fr) |
FR (1) | FR2853913B1 (fr) |
NO (1) | NO20055454L (fr) |
PL (1) | PL1613795T5 (fr) |
RU (1) | RU2344206C2 (fr) |
WO (1) | WO2004094704A2 (fr) |
ZA (1) | ZA200507846B (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2892426A1 (fr) * | 2005-10-26 | 2007-04-27 | Apollon Solar Soc Par Actions | Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication |
FR2895749A1 (fr) * | 2006-01-04 | 2007-07-06 | Apollon Solar Soc Par Actions | Dispositif et procede de fabrication d'un bloc de materiau cristallin |
EP2014803A1 (fr) * | 2007-07-10 | 2009-01-14 | Commissariat à l'Energie Atomique | Dispositif de fabrication d'un bloc de matériau cristallin avec modulation de la conductivité thermique |
KR20140069098A (ko) * | 2011-09-05 | 2014-06-09 | 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 | 불균일 열 저항을 갖는 도가니로부터 결정질 재료를 제조하기 위한 디바이스 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009541195A (ja) * | 2006-06-23 | 2009-11-26 | アール・イー・シー・スキャンウェハー・アー・エス | 半導体グレードの多結晶シリコンのインゴットの方向性凝固用の方法及び坩堝 |
FR2908125B1 (fr) * | 2006-11-02 | 2009-11-20 | Commissariat Energie Atomique | Procede de purification de silicium metallurgique par solidification dirigee |
FR2909990B1 (fr) * | 2006-12-13 | 2009-03-13 | Efd Induction Sa Sa | Procede et installation de fabrication de blocs d'un materiau semiconducteur |
FR2913434B1 (fr) * | 2007-03-08 | 2009-11-20 | Apollon Solar | Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins. |
DE102007026298A1 (de) | 2007-06-06 | 2008-12-11 | Freiberger Compound Materials Gmbh | Anordnung und Verfahren zur Herstellung eines Kristalls aus der Schmelze eines Rohmaterials sowie Einkristall |
JP5277654B2 (ja) * | 2008-02-15 | 2013-08-28 | 住友化学株式会社 | ホウ素添加シリコンの製造方法 |
US20090280050A1 (en) * | 2008-04-25 | 2009-11-12 | Applied Materials, Inc. | Apparatus and Methods for Casting Multi-Crystalline Silicon Ingots |
US20110180229A1 (en) * | 2010-01-28 | 2011-07-28 | Memc Singapore Pte. Ltd. (Uen200614794D) | Crucible For Use In A Directional Solidification Furnace |
JP5676900B2 (ja) * | 2010-03-26 | 2015-02-25 | 三菱マテリアル株式会社 | 多結晶シリコンインゴットの製造方法 |
US8562740B2 (en) * | 2010-11-17 | 2013-10-22 | Silicor Materials Inc. | Apparatus for directional solidification of silicon including a refractory material |
US20120248286A1 (en) | 2011-03-31 | 2012-10-04 | Memc Singapore Pte. Ltd. (Uen200614794D) | Systems For Insulating Directional Solidification Furnaces |
KR20140057305A (ko) * | 2011-08-01 | 2014-05-12 | 지티에이티 코포레이션 | 액체냉각식 열교환기 |
CN102677166B (zh) * | 2012-06-08 | 2015-06-03 | 常州天合光能有限公司 | 一种多晶硅铸锭用梯度坩埚的制备方法 |
CN102703969B (zh) * | 2012-06-14 | 2015-04-15 | 天威新能源控股有限公司 | 低碳准单晶铸锭炉及应用该铸锭炉进行铸锭的方法 |
DE102015118042A1 (de) | 2015-10-22 | 2017-04-27 | Nexwafe Gmbh | Verfahren und Vorrichtung zum Herstellen einer Halbleiterschicht |
JP7068914B2 (ja) * | 2018-04-26 | 2022-05-17 | 昭和電工株式会社 | 断熱性遮蔽部材及びそれを備えた単結晶製造装置 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2543752A1 (de) * | 1975-10-01 | 1977-04-07 | Licentia Gmbh | Anordnung zum herstellen eines einkristalls |
FR2487863A1 (fr) * | 1980-08-01 | 1982-02-05 | Sklyarov Alexei | Dispositif pour la croissance des monocristaux a partir d'alliages a constituants multiples |
FR2509638A1 (fr) * | 1981-07-20 | 1983-01-21 | Heliosil Spa | Moule et procede pour le moulage de lingots de silicium destines a etre utilises comme materiau pour la realisation de cellules solaires |
GB2218789A (en) * | 1988-05-19 | 1989-11-22 | Sumitomo Electric Industries | A high temperature furnace with anisotropic thermal insulation |
EP0424981A1 (fr) * | 1982-12-27 | 1991-05-02 | Sri International | Creuset en forme parallélépipédique pour lingots en silicium mono- ou quasi monocristallins |
DE4236827A1 (de) * | 1992-10-30 | 1994-05-05 | Wacker Chemitronic | Vorrichtung zur Herstellung multikristalliner Halbleiter-Blöcke mit kolumnarer Kristallstruktur |
JPH0710672A (ja) * | 1993-06-25 | 1995-01-13 | Shin Etsu Chem Co Ltd | 単結晶の製造方法 |
JPH10139580A (ja) * | 1996-11-13 | 1998-05-26 | Japan Steel Works Ltd:The | 一方向凝固材の製造方法および一方向凝固装置 |
JP2000351688A (ja) * | 1999-06-10 | 2000-12-19 | Mitsubishi Materials Corp | 結晶シリコン製造用ルツボ及びその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2508803C3 (de) † | 1975-02-28 | 1982-07-08 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur |
JPH01142464U (fr) * | 1988-03-23 | 1989-09-29 | ||
CN1025633C (zh) * | 1992-06-19 | 1994-08-10 | 中国科学院固体物理研究所 | 金属双晶及三晶体的生长技术和装置 |
JPH08301683A (ja) * | 1995-05-09 | 1996-11-19 | Nippon Koki Co Ltd | エアバッグ用ガス発生器 |
JP2936392B2 (ja) * | 1995-12-12 | 1999-08-23 | 三菱マテリアルクォーツ株式会社 | シリコン単結晶引上げ用石英ルツボ |
JPH10101484A (ja) * | 1996-09-30 | 1998-04-21 | Canon Inc | 結晶製造装置及び方法 |
WO1998035075A1 (fr) | 1997-02-06 | 1998-08-13 | Bayer Aktiengesellschaft | Creuset muni de couches de protection en silicium, procede d'application la couche de protection en silicium et utilisation |
JP2002160997A (ja) * | 2000-11-24 | 2002-06-04 | Ibiden Co Ltd | シリコン単結晶引上用ルツボの製造方法 |
-
2003
- 2003-04-17 FR FR0304803A patent/FR2853913B1/fr not_active Expired - Fee Related
-
2004
- 2004-04-09 RU RU2005135646/15A patent/RU2344206C2/ru not_active IP Right Cessation
- 2004-04-09 ES ES04742479T patent/ES2279402T5/es not_active Expired - Lifetime
- 2004-04-09 PL PL04742479T patent/PL1613795T5/pl unknown
- 2004-04-09 WO PCT/FR2004/000894 patent/WO2004094704A2/fr active IP Right Grant
- 2004-04-09 US US10/550,456 patent/US7442255B2/en not_active Expired - Fee Related
- 2004-04-09 CN CNB2004800103515A patent/CN100429333C/zh not_active Expired - Fee Related
- 2004-04-09 BR BRPI0409464-6A patent/BRPI0409464A/pt not_active Application Discontinuation
- 2004-04-09 JP JP2006505792A patent/JP4607096B2/ja not_active Expired - Fee Related
- 2004-04-09 DE DE602004004095T patent/DE602004004095T3/de not_active Expired - Lifetime
- 2004-04-09 EP EP04742479A patent/EP1613795B2/fr not_active Expired - Lifetime
- 2004-04-09 AT AT04742479T patent/ATE350519T1/de active
-
2005
- 2005-09-28 ZA ZA200507846A patent/ZA200507846B/en unknown
- 2005-11-17 NO NO20055454A patent/NO20055454L/no not_active Application Discontinuation
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2543752A1 (de) * | 1975-10-01 | 1977-04-07 | Licentia Gmbh | Anordnung zum herstellen eines einkristalls |
FR2487863A1 (fr) * | 1980-08-01 | 1982-02-05 | Sklyarov Alexei | Dispositif pour la croissance des monocristaux a partir d'alliages a constituants multiples |
FR2509638A1 (fr) * | 1981-07-20 | 1983-01-21 | Heliosil Spa | Moule et procede pour le moulage de lingots de silicium destines a etre utilises comme materiau pour la realisation de cellules solaires |
EP0424981A1 (fr) * | 1982-12-27 | 1991-05-02 | Sri International | Creuset en forme parallélépipédique pour lingots en silicium mono- ou quasi monocristallins |
GB2218789A (en) * | 1988-05-19 | 1989-11-22 | Sumitomo Electric Industries | A high temperature furnace with anisotropic thermal insulation |
DE4236827A1 (de) * | 1992-10-30 | 1994-05-05 | Wacker Chemitronic | Vorrichtung zur Herstellung multikristalliner Halbleiter-Blöcke mit kolumnarer Kristallstruktur |
JPH0710672A (ja) * | 1993-06-25 | 1995-01-13 | Shin Etsu Chem Co Ltd | 単結晶の製造方法 |
JPH10139580A (ja) * | 1996-11-13 | 1998-05-26 | Japan Steel Works Ltd:The | 一方向凝固材の製造方法および一方向凝固装置 |
JP2000351688A (ja) * | 1999-06-10 | 2000-12-19 | Mitsubishi Materials Corp | 結晶シリコン製造用ルツボ及びその製造方法 |
Non-Patent Citations (4)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 1995, no. 04, 31 mai 1995 (1995-05-31) & JP 07 010672 A (SHIN ETSU CHEM CO LTD), 13 janvier 1995 (1995-01-13) cité dans la demande * |
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 10, 31 août 1998 (1998-08-31) & JP 10 139580 A (JAPAN STEEL WORKS LTD:THE), 26 mai 1998 (1998-05-26) * |
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 15, 6 avril 2001 (2001-04-06) & JP 2000 351688 A (MITSUBISHI MATERIALS CORP), 19 décembre 2000 (2000-12-19) * |
See also references of EP1613795A2 * |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2892426A1 (fr) * | 2005-10-26 | 2007-04-27 | Apollon Solar Soc Par Actions | Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication |
WO2007048904A1 (fr) * | 2005-10-26 | 2007-05-03 | Apollon Solar | Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication |
FR2895749A1 (fr) * | 2006-01-04 | 2007-07-06 | Apollon Solar Soc Par Actions | Dispositif et procede de fabrication d'un bloc de materiau cristallin |
WO2007077305A1 (fr) * | 2006-01-04 | 2007-07-12 | Apollon Solar | Dispositif et procede de fabrication d'un bloc de materiau cristallin |
JP2009522201A (ja) * | 2006-01-04 | 2009-06-11 | アポロン、ソーラー | 結晶性物質のブロックを製造するための装置および方法 |
US8216373B2 (en) | 2006-01-04 | 2012-07-10 | Apollon Solar | Device and process for producing a block of crystalline material |
EP2014803A1 (fr) * | 2007-07-10 | 2009-01-14 | Commissariat à l'Energie Atomique | Dispositif de fabrication d'un bloc de matériau cristallin avec modulation de la conductivité thermique |
FR2918675A1 (fr) * | 2007-07-10 | 2009-01-16 | Commissariat Energie Atomique | Dispositif de fabrication d'un bloc de materiau cristallin avec modulation de la conductivite thermique. |
US8172944B2 (en) | 2007-07-10 | 2012-05-08 | Commissariat A L'energie Atomique | Device for producing a block of crystalline material with modulation of the thermal conductivity |
KR20140069098A (ko) * | 2011-09-05 | 2014-06-09 | 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 | 불균일 열 저항을 갖는 도가니로부터 결정질 재료를 제조하기 위한 디바이스 |
Also Published As
Publication number | Publication date |
---|---|
BRPI0409464A (pt) | 2006-04-18 |
DE602004004095D1 (de) | 2007-02-15 |
EP1613795B2 (fr) | 2010-06-02 |
CN1774526A (zh) | 2006-05-17 |
ATE350519T1 (de) | 2007-01-15 |
ES2279402T3 (es) | 2007-08-16 |
JP2006526751A (ja) | 2006-11-24 |
EP1613795A2 (fr) | 2006-01-11 |
EP1613795B1 (fr) | 2007-01-03 |
NO20055454L (no) | 2005-11-17 |
FR2853913B1 (fr) | 2006-09-29 |
DE602004004095T2 (de) | 2007-07-12 |
WO2004094704A3 (fr) | 2004-12-16 |
DE602004004095T3 (de) | 2010-12-02 |
RU2005135646A (ru) | 2006-03-10 |
FR2853913A1 (fr) | 2004-10-22 |
US20060144326A1 (en) | 2006-07-06 |
PL1613795T3 (pl) | 2007-05-31 |
RU2344206C2 (ru) | 2009-01-20 |
PL1613795T5 (pl) | 2010-10-29 |
ZA200507846B (en) | 2007-02-28 |
CN100429333C (zh) | 2008-10-29 |
JP4607096B2 (ja) | 2011-01-05 |
US7442255B2 (en) | 2008-10-28 |
ES2279402T5 (es) | 2010-10-08 |
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