NO20055454L - Smeltedigel til en innretning for a produsere en blokk av krystallinsk materiale og en fremgangsmate for a produsere denne - Google Patents

Smeltedigel til en innretning for a produsere en blokk av krystallinsk materiale og en fremgangsmate for a produsere denne

Info

Publication number
NO20055454L
NO20055454L NO20055454A NO20055454A NO20055454L NO 20055454 L NO20055454 L NO 20055454L NO 20055454 A NO20055454 A NO 20055454A NO 20055454 A NO20055454 A NO 20055454A NO 20055454 L NO20055454 L NO 20055454L
Authority
NO
Norway
Prior art keywords
producing
block
crystalline material
crucible
fabrication
Prior art date
Application number
NO20055454A
Other languages
English (en)
Inventor
Roland Einhaus
Francois V
Pascal Rivat
Original Assignee
Cyberstar
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=33041932&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=NO20055454(L) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cyberstar filed Critical Cyberstar
Publication of NO20055454L publication Critical patent/NO20055454L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S65/00—Glass manufacturing
    • Y10S65/08—Quartz
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Furnace Housings, Linings, Walls, And Ceilings (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Details Of Cutting Devices (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

Smeltedigel for en innretning for å produsere en blokk av krystallinsk materiale og fremgangsmåter for å produsere det samme, hvor bunnen (7) til smeltedigelen har mye større termisk overføringsegenskaper parallelt til en akse hovedsakelig vinkelrett til bunnen (7) enn sideveggene (8). Bunnen (7) og sideveggene (8) er dannet av materialer som har hovedsakelig de samme kjemiske bestanddeler. Bunnen (7) kan være transparent for infrarød stråling og sideveggene (8) opake for infrarød stråling. Bunnen (7) kan lages av amorf silisiumoksid og sideveggene (8) av opake kvartskeramer. Smeltedigelen kan også lages av grafitt. Innretningen kan omfatte en grafittfilt (9) anordnet mellom bunnen (7) til smeltedigelen og avkjølingsmidlene (4), og komprimeringsmidler (10) for grafittfilten (9). Det er dermed mulig å definere en temperaturgradient mellom 8(C/cm og 30(C/cm i den flytende fasen.
NO20055454A 2003-04-17 2005-11-17 Smeltedigel til en innretning for a produsere en blokk av krystallinsk materiale og en fremgangsmate for a produsere denne NO20055454L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0304803A FR2853913B1 (fr) 2003-04-17 2003-04-17 Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
PCT/FR2004/000894 WO2004094704A2 (fr) 2003-04-17 2004-04-09 Creuset pour un dispositif de fabrication d’un bloc de materiau cristallin et procede de fabrication

Publications (1)

Publication Number Publication Date
NO20055454L true NO20055454L (no) 2005-11-17

Family

ID=33041932

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20055454A NO20055454L (no) 2003-04-17 2005-11-17 Smeltedigel til en innretning for a produsere en blokk av krystallinsk materiale og en fremgangsmate for a produsere denne

Country Status (14)

Country Link
US (1) US7442255B2 (no)
EP (1) EP1613795B2 (no)
JP (1) JP4607096B2 (no)
CN (1) CN100429333C (no)
AT (1) ATE350519T1 (no)
BR (1) BRPI0409464A (no)
DE (1) DE602004004095T3 (no)
ES (1) ES2279402T5 (no)
FR (1) FR2853913B1 (no)
NO (1) NO20055454L (no)
PL (1) PL1613795T5 (no)
RU (1) RU2344206C2 (no)
WO (1) WO2004094704A2 (no)
ZA (1) ZA200507846B (no)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
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FR2892426B1 (fr) * 2005-10-26 2008-01-11 Apollon Solar Soc Par Actions Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication
FR2895749B1 (fr) * 2006-01-04 2008-05-02 Apollon Solar Soc Par Actions Dispositif et procede de fabrication d'un bloc de materiau cristallin
JP2009541195A (ja) * 2006-06-23 2009-11-26 アール・イー・シー・スキャンウェハー・アー・エス 半導体グレードの多結晶シリコンのインゴットの方向性凝固用の方法及び坩堝
FR2908125B1 (fr) * 2006-11-02 2009-11-20 Commissariat Energie Atomique Procede de purification de silicium metallurgique par solidification dirigee
FR2909990B1 (fr) * 2006-12-13 2009-03-13 Efd Induction Sa Sa Procede et installation de fabrication de blocs d'un materiau semiconducteur
FR2913434B1 (fr) * 2007-03-08 2009-11-20 Apollon Solar Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins.
DE102007026298A1 (de) 2007-06-06 2008-12-11 Freiberger Compound Materials Gmbh Anordnung und Verfahren zur Herstellung eines Kristalls aus der Schmelze eines Rohmaterials sowie Einkristall
FR2918675B1 (fr) * 2007-07-10 2009-08-28 Commissariat Energie Atomique Dispositif de fabrication d'un bloc de materiau cristallin avec modulation de la conductivite thermique.
JP5277654B2 (ja) * 2008-02-15 2013-08-28 住友化学株式会社 ホウ素添加シリコンの製造方法
US20090280050A1 (en) * 2008-04-25 2009-11-12 Applied Materials, Inc. Apparatus and Methods for Casting Multi-Crystalline Silicon Ingots
US20110180229A1 (en) * 2010-01-28 2011-07-28 Memc Singapore Pte. Ltd. (Uen200614794D) Crucible For Use In A Directional Solidification Furnace
JP5676900B2 (ja) * 2010-03-26 2015-02-25 三菱マテリアル株式会社 多結晶シリコンインゴットの製造方法
US8562740B2 (en) * 2010-11-17 2013-10-22 Silicor Materials Inc. Apparatus for directional solidification of silicon including a refractory material
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces
KR20140057305A (ko) * 2011-08-01 2014-05-12 지티에이티 코포레이션 액체냉각식 열교환기
FR2979638A1 (fr) 2011-09-05 2013-03-08 Commissariat Energie Atomique Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme
CN102677166B (zh) * 2012-06-08 2015-06-03 常州天合光能有限公司 一种多晶硅铸锭用梯度坩埚的制备方法
CN102703969B (zh) * 2012-06-14 2015-04-15 天威新能源控股有限公司 低碳准单晶铸锭炉及应用该铸锭炉进行铸锭的方法
DE102015118042A1 (de) 2015-10-22 2017-04-27 Nexwafe Gmbh Verfahren und Vorrichtung zum Herstellen einer Halbleiterschicht
JP7068914B2 (ja) * 2018-04-26 2022-05-17 昭和電工株式会社 断熱性遮蔽部材及びそれを備えた単結晶製造装置

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DE2543752B2 (de) * 1975-10-01 1979-03-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und Vorrichtung zum Herstellen eines Einkristalles
FR2487863A1 (fr) * 1980-08-01 1982-02-05 Sklyarov Alexei Dispositif pour la croissance des monocristaux a partir d'alliages a constituants multiples
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Also Published As

Publication number Publication date
BRPI0409464A (pt) 2006-04-18
DE602004004095D1 (de) 2007-02-15
EP1613795B2 (fr) 2010-06-02
CN1774526A (zh) 2006-05-17
ATE350519T1 (de) 2007-01-15
WO2004094704A2 (fr) 2004-11-04
ES2279402T3 (es) 2007-08-16
JP2006526751A (ja) 2006-11-24
EP1613795A2 (fr) 2006-01-11
EP1613795B1 (fr) 2007-01-03
FR2853913B1 (fr) 2006-09-29
DE602004004095T2 (de) 2007-07-12
WO2004094704A3 (fr) 2004-12-16
DE602004004095T3 (de) 2010-12-02
RU2005135646A (ru) 2006-03-10
FR2853913A1 (fr) 2004-10-22
US20060144326A1 (en) 2006-07-06
PL1613795T3 (pl) 2007-05-31
RU2344206C2 (ru) 2009-01-20
PL1613795T5 (pl) 2010-10-29
ZA200507846B (en) 2007-02-28
CN100429333C (zh) 2008-10-29
JP4607096B2 (ja) 2011-01-05
US7442255B2 (en) 2008-10-28
ES2279402T5 (es) 2010-10-08

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