DE60010496D1 - Czochralskiverfahren zur herstellung silizium-einkristalle durch steuerung der abkühlgeschwindigkeit - Google Patents

Czochralskiverfahren zur herstellung silizium-einkristalle durch steuerung der abkühlgeschwindigkeit

Info

Publication number
DE60010496D1
DE60010496D1 DE60010496T DE60010496T DE60010496D1 DE 60010496 D1 DE60010496 D1 DE 60010496D1 DE 60010496 T DE60010496 T DE 60010496T DE 60010496 T DE60010496 T DE 60010496T DE 60010496 D1 DE60010496 D1 DE 60010496D1
Authority
DE
Germany
Prior art keywords
controlling
silicon single
single crystals
cooling speed
producing silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60010496T
Other languages
English (en)
Other versions
DE60010496T2 (de
Inventor
Kirk D Mccallum
Brock Alexander
Mohsen Banan
Robert J Falster
Joseph C Holzer
Bayard K Johnson
Chang B Kim
Steven L Kimbel
Zheng Lu
Paolo Mutti
Vladimir V Voronkov
Stagno Luciano Mule
Jeffrey L Libbert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE60010496D1 publication Critical patent/DE60010496D1/de
Application granted granted Critical
Publication of DE60010496T2 publication Critical patent/DE60010496T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60010496T 1999-09-23 2000-09-18 Czochralski-Verfahren zur Herstellung Silizium-Einkristalle durch Steuerung der Abkühlgeschwindigkeit Expired - Lifetime DE60010496T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15572599P 1999-09-23 1999-09-23
US155725P 1999-09-23
PCT/US2000/025525 WO2001021861A1 (en) 1999-09-23 2000-09-18 Czochralski process for growing single crystal silicon by controlling the cooling rate

Publications (2)

Publication Number Publication Date
DE60010496D1 true DE60010496D1 (de) 2004-06-09
DE60010496T2 DE60010496T2 (de) 2005-04-07

Family

ID=22556551

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60010496T Expired - Lifetime DE60010496T2 (de) 1999-09-23 2000-09-18 Czochralski-Verfahren zur Herstellung Silizium-Einkristalle durch Steuerung der Abkühlgeschwindigkeit

Country Status (7)

Country Link
US (1) US20030196587A1 (de)
EP (1) EP1222324B1 (de)
JP (1) JP2003510235A (de)
KR (1) KR100745311B1 (de)
DE (1) DE60010496T2 (de)
TW (1) TW571006B (de)
WO (1) WO2001021861A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US8529695B2 (en) 2000-11-22 2013-09-10 Sumco Corporation Method for manufacturing a silicon wafer
DE10066124B4 (de) * 2000-11-24 2007-12-13 Mitsubishi Materials Silicon Corp. Silicium-Wafer
EP2295619B1 (de) 2001-01-26 2014-04-23 MEMC Electronic Materials, Inc. Verfahren zur Herstellung von Silizium mit niedriger Defektdichte und mit leerstellendominiertem Kern, der im wesentlichen frei von oxidationsinduzierten Stapelfehlern ist
KR101181052B1 (ko) * 2002-11-12 2012-09-07 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 단결정 잉곳을 성장시키는 크리스탈 풀러 및 방법
US8673248B2 (en) * 2006-05-19 2014-03-18 Memc Electronic Materials, Inc. Silicon material with controlled agglomerated point defects and oxygen clusters induced by the lateral surface
ITTO20110335A1 (it) * 2011-04-14 2012-10-15 Consiglio Nazionale Ricerche Procedimento di formazione di cristalli massivi, in particolare monocristalli di fluoruri drogati con ioni di terre rare
JP6716344B2 (ja) 2016-06-01 2020-07-01 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの熱処理方法
US11959189B2 (en) 2019-04-11 2024-04-16 Globalwafers Co., Ltd. Process for preparing ingot having reduced distortion at late body length
WO2020214531A1 (en) 2019-04-18 2020-10-22 Globalwafers Co., Ltd. Methods for growing a single crystal silicon ingot using continuous czochralski method
CN114555871A (zh) 2019-09-13 2022-05-27 环球晶圆股份有限公司 使用连续柴可斯基方法生长氮掺杂单晶硅锭的方法以及通过此方法生长的单晶硅锭

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232995A (ja) * 1983-06-10 1984-12-27 Sumitomo Electric Ind Ltd 引上単結晶の冷却方法
US5264189A (en) * 1988-02-23 1993-11-23 Mitsubishi Materials Corporation Apparatus for growing silicon crystals
US4981549A (en) * 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals
IT1280041B1 (it) * 1993-12-16 1997-12-29 Wacker Chemitronic Procedimento per il tiraggio di un monocristallo di silicio
JP3285111B2 (ja) * 1994-12-05 2002-05-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法
JP3085146B2 (ja) * 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
JPH08337490A (ja) * 1995-06-09 1996-12-24 Shin Etsu Handotai Co Ltd 結晶欠陥の少ないシリコン単結晶及びその製造方法
JP3006669B2 (ja) * 1995-06-20 2000-02-07 信越半導体株式会社 結晶欠陥の均一なシリコン単結晶の製造方法およびその製造装置
US5676751A (en) * 1996-01-22 1997-10-14 Memc Electronic Materials, Inc. Rapid cooling of CZ silicon crystal growth system
US5840120A (en) * 1996-01-22 1998-11-24 Memc Electronic Materials, Inc. Apparatus for controlling nucleation of oxygen precipitates in silicon crystals
DE19637182A1 (de) * 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
JPH10152395A (ja) * 1996-11-21 1998-06-09 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
US6045610A (en) * 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
US5994761A (en) * 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
DE19711922A1 (de) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
US6190631B1 (en) * 1997-04-09 2001-02-20 Memc Electronic Materials, Inc. Low defect density, ideal oxygen precipitating silicon
CN1280455C (zh) * 1997-04-09 2006-10-18 Memc电子材料有限公司 低缺陷浓度的硅
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
DE19983188T1 (de) * 1998-05-01 2001-05-10 Nippon Steel Corp Siliziumhalbleitersubstrat und Verfahren zu dessen Herstellung
JPH11349393A (ja) * 1998-06-03 1999-12-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
US6077343A (en) * 1998-06-04 2000-06-20 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
US6336968B1 (en) * 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
WO2000013209A2 (en) * 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Thermally annealed silicon wafers having improved intrinsic gettering
EP1114454A2 (de) * 1998-09-02 2001-07-11 MEMC Electronic Materials, Inc. Silizium auf isolator struktur aus einem einkristallsilizium mit niedriger fehlerdichte
US6284384B1 (en) * 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
US6197111B1 (en) * 1999-02-26 2001-03-06 Memc Electronic Materials, Inc. Heat shield assembly for crystal puller
US6376395B2 (en) * 2000-01-11 2002-04-23 Memc Electronic Materials, Inc. Semiconductor wafer manufacturing process

Also Published As

Publication number Publication date
US20030196587A1 (en) 2003-10-23
EP1222324A1 (de) 2002-07-17
WO2001021861A1 (en) 2001-03-29
DE60010496T2 (de) 2005-04-07
KR20020042689A (ko) 2002-06-05
TW571006B (en) 2004-01-11
EP1222324B1 (de) 2004-05-06
KR100745311B1 (ko) 2007-08-01
JP2003510235A (ja) 2003-03-18

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