WO2004083958A2 - Photoaktives bauelement mit organischen schichten - Google Patents
Photoaktives bauelement mit organischen schichten Download PDFInfo
- Publication number
- WO2004083958A2 WO2004083958A2 PCT/DE2004/000574 DE2004000574W WO2004083958A2 WO 2004083958 A2 WO2004083958 A2 WO 2004083958A2 DE 2004000574 W DE2004000574 W DE 2004000574W WO 2004083958 A2 WO2004083958 A2 WO 2004083958A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- layers
- component according
- photoactive
- photoactive component
- Prior art date
Links
- 239000012044 organic layer Substances 0.000 title claims abstract description 13
- 239000010410 layer Substances 0.000 claims abstract description 238
- 230000007704 transition Effects 0.000 claims abstract description 23
- 238000010521 absorption reaction Methods 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000011368 organic material Substances 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 238000001228 spectrum Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 230000005525 hole transport Effects 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims 7
- 238000000862 absorption spectrum Methods 0.000 claims 5
- 229910010272 inorganic material Inorganic materials 0.000 claims 4
- 150000003839 salts Chemical class 0.000 claims 4
- 150000004053 quinones Chemical class 0.000 claims 3
- 125000001424 substituent group Chemical group 0.000 claims 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- -1 F4-TCNQ) Chemical class 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 239000000460 chlorine Substances 0.000 claims 2
- 230000000295 complement effect Effects 0.000 claims 2
- 229920001940 conductive polymer Polymers 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims 2
- 150000004032 porphyrins Chemical class 0.000 claims 2
- RHPVRWXUCDJURW-UHFFFAOYSA-N (4-cyanoiminocyclohexa-2,5-dien-1-ylidene)cyanamide Chemical class N#CN=C1C=CC(=NC#N)C=C1 RHPVRWXUCDJURW-UHFFFAOYSA-N 0.000 claims 1
- CHBDXRNMDNRJJC-UHFFFAOYSA-N 1,2,3-triphenylbenzene Chemical class C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 CHBDXRNMDNRJJC-UHFFFAOYSA-N 0.000 claims 1
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 claims 1
- PONZBUKBFVIXOD-UHFFFAOYSA-N 9,10-dicarbamoylperylene-3,4-dicarboxylic acid Chemical compound C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=N)C2=C1C3=CC=C2C(=N)O PONZBUKBFVIXOD-UHFFFAOYSA-N 0.000 claims 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical class CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 claims 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims 1
- 229920000144 PEDOT:PSS Polymers 0.000 claims 1
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims 1
- 239000007983 Tris buffer Substances 0.000 claims 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 150000001340 alkali metals Chemical class 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 229910003472 fullerene Inorganic materials 0.000 claims 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- MZYHMUONCNKCHE-UHFFFAOYSA-N naphthalene-1,2,3,4-tetracarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=C(C(O)=O)C(C(O)=O)=C21 MZYHMUONCNKCHE-UHFFFAOYSA-N 0.000 claims 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 claims 1
- 150000004866 oxadiazoles Chemical class 0.000 claims 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims 1
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 claims 1
- BIGSSBUECAXJBO-UHFFFAOYSA-N terrylene Chemical group C12=C3C4=CC=C2C(C=25)=CC=CC5=CC=CC=2C1=CC=C3C1=CC=CC2=CC=CC4=C21 BIGSSBUECAXJBO-UHFFFAOYSA-N 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims 1
- 150000001651 triphenylamine derivatives Chemical class 0.000 claims 1
- 230000006798 recombination Effects 0.000 abstract description 20
- 238000005215 recombination Methods 0.000 abstract description 20
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000006862 quantum yield reaction Methods 0.000 abstract description 4
- 239000002800 charge carrier Substances 0.000 description 43
- 230000032258 transport Effects 0.000 description 43
- 238000009792 diffusion process Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 4
- 238000004770 highest occupied molecular orbital Methods 0.000 description 4
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000005325 percolation Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/381—Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the invention relates to a photoactive component with organic layers, in particular a solar cell, consisting of a sequence of organic thin layers and contact layers with a doped transport layer and a photoactive layer, each in a pi, ni or pin diode structure of ap -, i- or n-layer are arranged.
- Organic solar cells consist of a series of thin layers (typically 1 to 1 ⁇ m) made of organic materials, which are preferably evaporated in a vacuum or spun from a solution. The electrical contact is usually made through metal layers and / or transparent conductive oxides (TCOs).
- TCOs transparent conductive oxides
- a solar cell converts light energy into electrical energy.
- organic light cells do not directly generate free charge carriers through the light, but rather excitons, that is, electrically neutral excitation states (bound electron-hole pairs) are formed. Only in a second step are these excitons separated into free charge carriers, which then contribute to the electrical current flow.
- organic-based components over conventional inorganic-based components (semiconductors such as silicon, gallium arsenide) is the sometimes extremely high optical absorption coefficients (up to 2 ⁇ 10 5 cm -1 ), so that it is possible to produce very thin solar cells with little material and energy expenditure.
- semiconductor-based components semiconductor-based components
- optical absorption coefficients up to 2 ⁇ 10 5 cm -1
- Other technological aspects are the low costs, the possibility of producing flexible, large-area components on plastic films, and the almost unlimited variation possibilities of organic chemistry.
- n or p means an n or p doping, which leads to an increase in the density of free electrons or holes in the thermal equilibrium state.
- layers are primarily to be understood as transport layers.
- One or more i-layer (s) can consist of layers made of one material as well as so-called interpenetrating networks. The light incident through the transparent basic contact generates excitons in the i-layer or in the n- / p-layer. These excitons can only be separated by very high electrical fields or at suitable interfaces. Sufficiently high fields are not available in organic solar cells, so that all promising concepts for organic solar cells are based on exciton separation at photoactive interfaces.
- the excitons reach by diffusion 'of such an active interface where electrons and holes are separated from each other. This can lie between the p- (n-) layer and the i-layer or between two i-layers. In the built-in electric field of the solar cell, the electrons are now transported to the n-area and the holes to the p-area.
- a contact metal has a large and the other a small work function, so that a Schottky barrier is formed with the organic layer [US 4127738].
- the active layer consists of an organic semiconductor in a gel or binder [US03844843, US03900945, US04175981 and US04175982].
- a layer contains two or more types of organic pigments which have different spectral characteristics [JP 04024970].
- a layer contains a pigment that generates the charge carriers and additionally a material that transports the charge carriers away [JP 07142751].
- the doping of organic materials is known from US Pat. No. 5,093,698: by adding an acceptor-type or donor-type dopant, the equilibrium charge carrier concentration in the layer is increased and the conductivity is increased.
- the doped layers are used as injection layers at the interface with the contact materials in electroluminescent components. Similar doping approaches are also expedient for solar cells.
- the active layer thicknesses of organic solar cells are usually less than the depth of penetration of the light.
- organic dyes only have individual absorption bands, so that a material can never cover the entire optical spectrum. Therefore it is desirable to use light trapping or to be able to stack several cells on top of each other.
- Such stacked cells were first developed by Yakimov et al. [A. Yakimov, SR Forrest, Appl. Phys. Lett. 80 (9), 1667 (2002).]. They consist of two layers per single cell and require recombination centers at the interface between the individual cells.
- these recombination centers are attached directly to the photoactive material, they not only ensure the desired recombination of charge carriers from the nth cell with opposing set charge carriers from the n + lth cell, but also form undesired recombination centers for excitons or charge carrier pairs from one and the same cell. This results in either recombination losses or inactive areas.
- the layers must be made thicker than the width of the photoactive zone, so that absorption occurs in areas where it cannot be used. Such a problem also occurs in an analogous manner in individual diode structures. Here, however, the recombination losses occur directly at the transitions between the active layer and the contact electrode.
- the invention is therefore based on the object of largely reducing recombination losses or the occurrence of inactive regions in solar cells with organic layers.
- the present invention aims at the realization of solar cells, which can consist of a single pi, ni or pin diode structure (according to claim 1, cf. Figure 1) as well as of several stacked pi, ni or pin-diode structures (according to claim 7, see Figure 2).
- a pi, ni or pin diode structure is simply referred to below as a structure, unless one of the three structures is specifically meant in an individual case.
- p denotes at least one p-doped layer (p-layer), i at least one electrically undoped or only comparatively lightly doped layer (i-layer), at least one of which absorbs photons and is used for generation. on of the current, and n contributes at least one n-doped layer (n-layer).
- the recombination zone or the contact electrode is separated from the active areas by layers with an increased band gap (wide-gap layers) in which neither excitons nor minority charge carriers exist that could recombine. Furthermore, they serve to protect the i-layer as an active layer against destructive influences before, during and after the deposition of contact layers or recombination zones.
- the wide-gap transport layers shown in Fig. 1 as 2a, 4a and and in Fig.
- 2 as 2b, 4b, 6b, 8b etc. are materials whose absorption behavior differs significantly from that of the active layers , It is particularly advantageous if they absorb only in the UV or UV-near range of the visible sun spectrum. This ensures that the essential absorption takes place in the active layers.
- excitons are reflected at the transitions to the wide-gap layers and are not removed from the photoactive process.
- the transport properties in the wide-gap p- or n-layers for majority charge carriers are decisively improved compared to undoped layers by appropriate p- or n-doping, so that the layer thicknesses can be varied over a wide range by the maximum of the optical field to concentrate on the active i-layers and thus optimize them.
- the requirements for maximizing the built-in voltage in the individual diode structures, and for low-loss recombination at their interface, are also achieved by n- or p-doping of the wide-gap layers.
- a layer or a combination of layers as specified in claims 11 to 16 favors the low-loss recombination in the blocking direction or the generation in the forward direction at the transitions between the individual structures.
- a layer according to claims 12 to 16 can serve as a diffusion barrier for dopants or other materials which follow in the technological sequence or for the purpose of induced growth of the subsequent layers.
- the generation of the photocurrent in the i-layer of the photoactive element according to the invention is based on one or a combination of the following active principles:
- Fig. 2 an organic solar cell according to the invention according to the stacking principle (second embodiment)
- Fig. 3a a photoactive component based on the stacking principle, which consists of 2 pin cells,
- FIG. 3b shows an energy diagram of the photoactive component shown in FIG. 3a
- Fig. 4 shows a layer sequence of the double structure
- Fig. 5 one light and one dark characteristic.
- Basic contact mostly transparent, with optional organic or inorganic contact mediation layer 2a.
- Charge carrier transport layer (wide-gap), p- or n-doped
- Charge carrier transport layer (wide-gap), n- or p-doped
- the component advantageously consists of a pin or nip layer structure.
- the pin (or nip) structure in turn consists of two or more organic charge carrier transport layers (2a and 4a) and a layer system (3a) between the organic layer (2a) and the organic layer (4a), in which the light is absorbed.
- the complete structure contains 2 contact layers (la and 5a) which can also be designed as a transparent contact layer.
- the layers 2a and 4a are p- and n-doped, the layer 3a is undoped or very slightly p- and n-doped.
- Layer 3a is either one component (apart from the doping) or it is a mixture of two components according to the principle of interpenetrating networks.
- the materials are selected so that excitons are efficiently separated into free charge carriers at the internal phase boundaries in the mixed layer between the two materials or at the boundary layer of two layers.
- an advantageous embodiment of a structure of an organic solar cell according to the invention according to the stacking principle includes the following layers:
- Charge carrier transport layer (wide-gap), p- or n-doped
- the component advantageously consists of at least two stacked pin or nip layer structures.
- the pin (or nip) structures in turn consist of two or more organic charge carrier transport layers (2b and 4b, 6b and 8b etc.) and one between the organic layer (2b, 6b etc.) and the organic layer (4b, 8b etc.) located layer system (3b, 7b etc.), in which the light is absorbed.
- the complete stack structure contains 2 contact layers (lb and Nb) as well as a transition layer system between the nth and the n + lth pin (nip) cell, which can also be designed as a transparent contact layer.
- the layers 3b, 7b etc. are p or n-doped, the layers 3b, 7b etc. are undoped or very slightly p- or n-doped.
- the layer 3b, 7b etc. is either one-component (apart from the doping) or it is Mixed layers of two components according to the principle of interpenetrating networks. The materials are selected so that excitons are efficiently separated into free charge carriers at the internal phase boundaries in the mixed layer between the two materials or at the boundary layer of two layers.
- the charge carrier transport layers 2b, 4b, 6b etc. need not be photoactive and can be doped. According to the invention, at least one of the transport layers is doped in each diode structure.
- Each charge carrier transport layer ensures the efficient removal of a charge carrier type (holes or electrons). In addition, they separate the active layers from the contacts or the recombination layers 5b, 9b etc. and thus prevent the excitons or charge carrier pairs from a diode from encountering undesired recombination centers.
- a photoactive component which consists of 2 pin cells.
- Single and multiple pin cells work analogously.
- Such a stack cell is shown in Fig. 3a and its energy scheme in Fig. 3b.
- the transport layers, the active layers and the transition layers each consist of only a single layer.
- the active layers of the first pin cell (3b) should cover a different absorption range than that of the pin cell two (7b) in order to utilize the widest possible spectral range.
- the active layers in the sense of the interpenetrating networks consist of a mixture of two materials each. The light is now intended to produce an exciton in the undoped material of the first mixed layer (3b).
- This recombination should result in as little energy loss as possible. As explained in more detail below, this is achieved by doping at least one of the adjacent transport layers and, if appropriate, by incorporating the transition layer (5b). When using highly doped transport layers, such a transition layer may not be necessary.
- Fig. 3b shows the schematic representation of the HOMO (highest occupied molecular orbital) and LUMO (lowest unoccupied molecular orbital) levels using the example of a double pin stack structure.
- active layer 3b and 7b
- hole transport 4b and 8b
- electron transport (2b and 6b)
- the excitation should now be generated in each active layer by the light. This can disintegrate into a hole and an electron almost on site (cf. interpenetrating networks) or diffuse until it is inside the active layer meets a separating boundary layer, where it dissociates.
- the transport layers in the case of a diffusion process of the excitons it is ensured that non-separated excitons are reflected by the adjacent wide-gap transport layers and are still available for dissociation and thus for charge carrier generation.
- the resulting charge carriers are transported to the limits of the active layers by the built-in field, which arises from the adjustment of the different Fermini levels of the n- or p-doped layers (2b, 6b or 4b, 8b) the transport layers.
- the materials should preferably be selected such that the charge transfer between the active layer and the transport layers is only possible for one type of charge carrier (electrons to the n layer, holes to the p layer).
- the energy levels collide with one another iso-energetically, as shown in Fig. 3b. There is an energetic barrier for the other species.
- Charge carriers in layers 2b and 8b can pass directly to contact 1b or 9b.
- the doping of the transport layers has a positive effect, since the transition to contacts is also facilitated by workings that are not ideally adapted due to strong band bending and thus a reduction in the depletion zone (quasi-ohmic contact).
- Charge carriers in layers 4b (holes) and 6b (electrons) pass to the transition layer (5b), where they can recombine. Their transition is particularly favored by the advantageous influence of doping (quasi-ohmic contact) just explained.
- the concentration of the optical field for the purpose of increased absorption in the active areas by optimal choice of optical constants and layer thicknesses of the transport layers is also if object of the invention.
- the charge transport layers are preferably doped (in the sense of an electrically effective doping).
- the molar doping concentrations are typically in the range from 1:10 to 1: 10000. If the dopants are significantly smaller than the matrix molecules, in exceptional cases there can be more dopants than matrix molecules in the layer (up to 5: 1).
- the dopants can be organic or inorganic.
- the transport properties are decisively improved by doping, so that losses (potential drop across the resistor) are minimized.
- the doping has an advantageous effect on the recombination or generation behavior at the transition between two pin cells.
- high doping also means a narrow depletion zone on both sides of this transition, so that even high barriers can be easily overcome (e.g. through the quantum mechanical tunnel process). Due to the use of wide-gap materials, this pn junction is also not photoactive and therefore does not lead to the build-up of counter voltage when illuminated, which would reduce the usable photo voltage.
- the stacking cell consists in the fact that at the transition between two pin cells an additional transition layer (possibly several layers) is introduced. This can be made thin and serve the additional introduction of recombination centers. In particular, it is expedient that it consists of metal clusters or an ultra-thin metal layer.
- a light and a dark characteristic curve are shown in Fig. 5.
- Fig. 4 shows the layer sequence of the double structure.
- the simple structure corresponds to the first sub-cell (starting from the substrate), with an approx. 40 nm gold layer being applied instead of the 1 nm thick gold layer for contacting.
- the cells shown are not optimized in any way.
- the approximately doubling of the open circuit voltage (open circuit voltage U 0 c) confirms the functionality.
- 2a, 2b transport layer (wide-gap) (p- or n-doped)
- 4a, 4b transport layer (wide-gap) (n- or p-doped)
- Nb Transport layer (wide-gap) (n- or p-doped) Nb contact layer
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04721821.9A EP1611484B1 (de) | 2003-03-19 | 2004-03-19 | Photoaktives bauelement mit organischen schichten |
AU2004221377A AU2004221377B2 (en) | 2003-03-19 | 2004-03-19 | Photoactive component comprising organic layers |
BRPI0408493A BRPI0408493B1 (pt) | 2003-03-19 | 2004-03-19 | componente fotoativo orgânico |
JP2006504268A JP2006520533A (ja) | 2003-03-19 | 2004-03-19 | 有機層を有する光活性部品 |
US10/549,775 US7675057B2 (en) | 2003-03-19 | 2004-03-19 | Photoactive component with organic layers |
CN2004800072080A CN1774823B (zh) | 2003-03-19 | 2004-03-19 | 带有有机层的光活性组件 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10313232 | 2003-03-19 | ||
DE10313232.5 | 2003-03-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004083958A2 true WO2004083958A2 (de) | 2004-09-30 |
WO2004083958A3 WO2004083958A3 (de) | 2005-11-10 |
Family
ID=32921125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2004/000574 WO2004083958A2 (de) | 2003-03-19 | 2004-03-19 | Photoaktives bauelement mit organischen schichten |
Country Status (10)
Country | Link |
---|---|
US (1) | US7675057B2 (de) |
EP (1) | EP1611484B1 (de) |
JP (3) | JP2006520533A (de) |
KR (1) | KR100977905B1 (de) |
CN (1) | CN1774823B (de) |
AU (1) | AU2004221377B2 (de) |
BR (1) | BRPI0408493B1 (de) |
DE (1) | DE102004014046B4 (de) |
IN (1) | IN2005MU01022A (de) |
WO (1) | WO2004083958A2 (de) |
Cited By (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006278584A (ja) * | 2005-03-28 | 2006-10-12 | Dainippon Printing Co Ltd | 有機薄膜太陽電池素子 |
JP2008509559A (ja) * | 2004-08-05 | 2008-03-27 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | 積層型有機感光性デバイス |
DE102007031220A1 (de) * | 2007-07-04 | 2009-01-08 | Novaled Ag | Chinoide Verbindungen und deren Verwendung in halbleitenden Matrixmaterialien, elektronischen und optoelektronischen Bauelementen |
WO2010060421A1 (de) | 2008-11-30 | 2010-06-03 | Brandenburgische Technische Universität | Solarzelle mit elektrostatischen lokalfeldern im photoaktiven bereich |
US7800297B2 (en) | 2006-02-17 | 2010-09-21 | Solexant Corp. | Nanostructured electroluminescent device and display |
DE102010028945A1 (de) | 2009-10-29 | 2010-12-09 | Heliatek Gmbh | Anwendungen für organische Photovoltaik |
DE102009051142A1 (de) | 2009-06-05 | 2010-12-09 | Heliatek Gmbh | Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung |
WO2011015550A1 (de) | 2009-08-03 | 2011-02-10 | Heliatek Gmbh | Verdampfer system für organische schichten und bauelemente |
WO2011045253A1 (de) | 2009-10-13 | 2011-04-21 | Basf Se | Mischungen zur herstellung von photoaktiven schichten für organische solarzellen und organische photodetektoren |
WO2011064330A1 (de) | 2009-11-27 | 2011-06-03 | Heliatek Gmbh | Organisches photoaktives bauelement mit kavitäts-schichtsystem |
WO2011073219A1 (de) | 2009-12-16 | 2011-06-23 | Heliatek Gmbh | Photoaktives bauelement mit organischen schichten |
DE102010007403A1 (de) | 2010-02-09 | 2011-08-11 | heliatek GmbH, 01139 | Aufdampfparameter für organische Solarzellen |
EP2385556A1 (de) | 2010-05-04 | 2011-11-09 | Heliatek GmbH | Photoaktives Bauelement mit organischen Schichten |
EP2398056A1 (de) | 2010-06-21 | 2011-12-21 | Heliatek GmbH | Organische Solarzelle mit mehreren Transportschichtsystemen |
US8083971B2 (en) | 2007-07-23 | 2011-12-27 | Basf Se | Use of rylene derivatives as active components in solar cells and photodetectors |
JP2012109627A (ja) * | 2012-03-09 | 2012-06-07 | Dainippon Printing Co Ltd | 有機薄膜太陽電池素子 |
DE102010056519A1 (de) | 2010-12-27 | 2012-06-28 | Heliatek Gmbh | Optoelektronisches Bauelement mit dotierten Schichten |
DE102012103448A1 (de) | 2012-04-19 | 2013-10-24 | Heliatek Gmbh | Verfahren zur Optimierung von in Reihe geschalteten, photoaktiven Bauelementen auf gekrümmten Oberflächen |
WO2013179223A2 (de) | 2012-05-30 | 2013-12-05 | Heliatek Gmbh | Solarmodul zur anordnung auf formteil aus beton |
WO2013186668A1 (de) | 2012-06-11 | 2013-12-19 | Heliatek Gmbh | Filtersystem für photoaktive bauelemente |
DE102012105810A1 (de) | 2012-07-02 | 2014-01-02 | Heliatek Gmbh | Transparente Elektrode für optoelektronische Bauelemente |
DE102012105809A1 (de) | 2012-07-02 | 2014-01-02 | Heliatek Gmbh | Transparente Elektrode für optoelektronische Bauelemente |
DE102012105812A1 (de) | 2012-07-02 | 2014-01-02 | Heliatek Gmbh | Elektrodenanordnung für optoelektronische Bauelemente |
WO2014006565A2 (de) | 2012-07-02 | 2014-01-09 | Heliatek Gmbh | Transparente elektrode für optoelektronische bauelemente |
DE102012106607A1 (de) | 2012-07-20 | 2014-01-23 | Heliatek Gmbh | Verfahren zur Versiegelung von Modulen mit optoelektronischen Bauelementen |
DE102012106815A1 (de) | 2012-07-26 | 2014-01-30 | Heliatek Gmbh | Verfahren zur Kontaktierung optoelektronischer Bauelemente |
DE102013101714A1 (de) | 2013-02-21 | 2014-08-21 | Heliatek Gmbh | Verfahren zur Optimierung von Absorberschichten in optoelektronischen Bauelementen |
WO2014128278A1 (de) | 2013-02-21 | 2014-08-28 | Heliatek Gmbh | Optoelektronisches bauelement |
DE102013104094A1 (de) | 2013-04-23 | 2014-10-23 | Heliatek Gmbh | Verfahren zur Anordnung von optoelektronischen Bauelementen auf Formkörpern |
DE102013110373A1 (de) | 2013-09-19 | 2015-03-19 | Heliatek Gmbh | Optoelektronisches Bauelement |
DE102013111164A1 (de) | 2013-10-09 | 2015-05-07 | Heliatek Gmbh | Verfahren zur Herstellung von Kontaktlöchern |
DE102015116418A1 (de) | 2014-09-26 | 2016-03-31 | Heliatek Gmbh | Verfahren zum Aufbringen der Schutzschicht, Schutzschicht selbst und Halbfabrikat mit einer Schutzschicht |
EP3196012A1 (de) | 2016-01-20 | 2017-07-26 | AGC Glass Europe | Organische fotovoltaische anordnung und verfahren zur herstellung |
EP3196013A1 (de) | 2016-01-20 | 2017-07-26 | AGC Glass Europe | Organische photovoltaische anordnung und verfahren zur herstellung |
WO2017186592A1 (en) | 2016-04-29 | 2017-11-02 | Agc Glass Europe | Assembly |
DE102016118177A1 (de) | 2016-09-26 | 2018-03-29 | Heliatek Gmbh | Organisches Bauelement zur Umwandlung von Licht in elektrische Energie mit verbesserter Effizienz und Lebensdauer bei Teilverschattung |
EP3410505A1 (de) | 2017-05-31 | 2018-12-05 | Heliatek GmbH | Polyphenole und polyamino-derivate in organischen optoelektronischen bauelementen |
EP3617214A1 (de) | 2018-08-30 | 2020-03-04 | Heliatek GmbH | Organisches halbleitendes material und dessen synthese und organisches halbleitendes bauelement mit dem material |
DE202019102792U1 (de) | 2019-05-17 | 2020-05-20 | Heliatek Gmbh | Säule mit mindestens einem photovoltaischen Element und Verwendung eines photovoltaischen Elements an einer Säule |
WO2020119865A2 (de) | 2018-12-14 | 2020-06-18 | Heliatek Gmbh | Stabilisierung laserstrukturierter organischer photopholtaik |
DE102019113016A1 (de) * | 2019-05-17 | 2020-11-19 | Heliatek Gmbh | Säule mit mindestens einem photovoltaischen Element und Verwendung eines photovoltaischen Elements an einer Säule |
WO2021083462A1 (de) | 2019-10-30 | 2021-05-06 | Heliatek Gmbh | Photovoltaisches element mit verbesserter effizienz bei verschattung und verfahren zur herstellung eines solchen photovoltaischen elements |
WO2021089089A1 (de) | 2019-11-05 | 2021-05-14 | Heliatek Gmbh | Optoelektronisches bauelement, sowie verfahren zur kontaktierung eines optoelektronischen bauelements |
DE102019135574A1 (de) * | 2019-12-20 | 2021-06-24 | Heliatek Gmbh | Verfahren zum Herstellen einer heterogen strukturierten Beschichtung eines optoelektronischen Bauelements, sowie ein optoelektronisches Bauelement mit einer solchen Beschichtung |
DE102020102494A1 (de) | 2020-01-31 | 2021-08-05 | Heliatek Gmbh | Verfahren zum Überprüfen eines photovoltaischen Elements, sowie ein photovoltaisches Element,überprüft nach einem solchen Verfahren |
DE102020108847A1 (de) | 2020-03-31 | 2021-09-30 | Heliatek Gmbh | Anordnung von Zellen in einem photovoltaischen Element |
EP3890041A1 (de) | 2020-03-31 | 2021-10-06 | Heliatek GmbH | Neue chemische verbindungen, optoelektronische elemente mit mindestens einer neuen chemischen verbindung und verwendung von neuen chemischen verbindungen in einem optoelektronischen element |
WO2022042804A1 (de) | 2020-08-31 | 2022-03-03 | Heliatek Gmbh | Chemische verbindung, verwendung mindestens einer solchen chemischen verbindung in einem optoelektronischen bauelement, und optoelektronisches bauelement mit mindestens einer solchen chemischen verbindung |
WO2022048699A1 (de) | 2019-12-12 | 2022-03-10 | Heliatek Gmbh | Beschichtung für ein optoelektronisches bauelement, verfahren zur herstellung einer solchen beschichtung, optoelektronisches bauelement mit einer solchen beschichtung |
DE102020131742A1 (de) | 2020-11-30 | 2022-06-02 | Heliatek Gmbh | Feldbreitenanpassung von Zellen in einem photovoltaischen Element |
DE102020135118A1 (de) | 2020-12-30 | 2022-06-30 | Heliatek Gmbh | Verbindung für ein optoelektronisches Bauelement und optoelektronisches Bauelement enthaltend die Verbindung |
DE102021127720A1 (de) | 2021-10-25 | 2023-04-27 | Heliatek Gmbh | Elektrisch leitfähige Beschichtung eines elektrischen Bauelements zur elektrisch leitfähigen Kontaktierung einer außerhalb der Beschichtung angeordneten Sammelschiene |
DE102022100149A1 (de) | 2022-01-04 | 2023-07-06 | Heliatek Gmbh | Verfahren zur Herstellung einer photoaktiven Schicht in einem Schichtsystem eines organischen elektronischen Bauelements |
WO2024002432A1 (de) | 2022-06-30 | 2024-01-04 | Heliatek Gmbh | Optoelektronisches bauelement mit einer als planar heterojunction ausgebildeten photoaktiven schicht |
WO2024067923A1 (de) | 2022-09-30 | 2024-04-04 | Heliatek Gmbh | Chemische verbindung, optoelektronisches bauelement mit mindestens einer solchen chemischen verbindung, und verwendung mindestens einer solchen chemischen verbindung in einem optoelektronischen bauelement |
Families Citing this family (95)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100026176A1 (en) | 2002-03-28 | 2010-02-04 | Jan Blochwitz-Nomith | Transparent, Thermally Stable Light-Emitting Component Having Organic Layers |
DE10326546A1 (de) * | 2003-06-12 | 2005-01-05 | Siemens Ag | Organische Solarzelle mit einer Zwischenschicht mit asymmetrischen Transporteigenschaften |
EP1817800A1 (de) * | 2004-12-02 | 2007-08-15 | The Trustees Of Princeton University | Lichtempfindliche halbleiterbausteine mit isolierten photosynthetischen komplexen |
DE102005010978A1 (de) * | 2005-03-04 | 2006-09-07 | Technische Universität Dresden | Photoaktives Bauelement mit organischen Schichten |
DE502005009802D1 (de) * | 2005-11-10 | 2010-08-05 | Novaled Ag | Dotiertes organisches Halbleitermaterial |
US7919010B2 (en) * | 2005-12-22 | 2011-04-05 | Novaled Ag | Doped organic semiconductor material |
CA2641490A1 (en) * | 2006-02-13 | 2007-08-23 | Damoder Reddy | Photovoltaic device with nanostructured layers |
KR20080097462A (ko) * | 2006-02-16 | 2008-11-05 | 솔렉슨트 코포레이션 | 나노입자 감응형 나노구조형 태양 전지 |
EP1837926B1 (de) * | 2006-03-21 | 2008-05-07 | Novaled AG | Heterocyclisches Radikal oder Diradikal, deren Dimere, Oligomere, Polymere, Dispiroverbindungen und Polycyclen, deren Verwendung, organisches halbleitendes Material sowie elektronisches Bauelement |
EP1837927A1 (de) * | 2006-03-22 | 2007-09-26 | Novaled AG | Verwendung von heterocyclischen Radikalen zur Dotierung von organischen Halbleitern |
AU2007314229A1 (en) * | 2006-03-23 | 2008-05-08 | Solexant Corp. | Photovoltaic device containing nanoparticle sensitized carbon nanotubes |
JP5324425B2 (ja) * | 2006-04-11 | 2013-10-23 | メルク パテント ゲーエムベーハー | タンデム型光電池 |
US20080001141A1 (en) * | 2006-06-28 | 2008-01-03 | Unidym, Inc. | Doped Transparent and Conducting Nanostructure Networks |
EP2089910A4 (de) * | 2006-12-06 | 2012-12-26 | Solexant Corp | Nanofotovoltaische anordnung mit verbesserter quanteneffizienz |
DE102007009995A1 (de) * | 2007-03-01 | 2008-09-04 | Hahn-Meitner-Institut Berlin Gmbh | Organische Solarzelle |
DE102007012794B3 (de) | 2007-03-16 | 2008-06-19 | Novaled Ag | Pyrido[3,2-h]chinazoline und/oder deren 5,6-Dihydroderivate, deren Herstellungsverfahren und diese enthaltendes dotiertes organisches Halbleitermaterial |
DE102007018456B4 (de) * | 2007-04-19 | 2022-02-24 | Novaled Gmbh | Verwendung von Hauptgruppenelementhalogeniden und/oder -pseudohalogeniden, organisches halbleitendes Matrixmaterial, elektronische und optoelektronische Bauelemente |
EP1988587B1 (de) | 2007-04-30 | 2016-12-07 | Novaled GmbH | Oxokohlenstoff-, Pseudooxokohlenstoff- und Radialenverbindungen sowie deren Verwendung |
EP1990847B1 (de) * | 2007-05-10 | 2018-06-20 | Novaled GmbH | Verwendung von chinoiden Bisimidazolen und deren Derivaten als Dotand zur Dotierung eines organischen halbleitenden Matrixmaterials |
US7906724B2 (en) * | 2007-07-31 | 2011-03-15 | Agency For Science, Technology And Research | N-type conjugated materials based on 2-vinyl-4,5-dicyanoimidazoles and their use in organic photovoltaics |
TWI452703B (zh) * | 2007-11-16 | 2014-09-11 | Semiconductor Energy Lab | 光電轉換裝置及其製造方法 |
US8057712B2 (en) * | 2008-04-29 | 2011-11-15 | Novaled Ag | Radialene compounds and their use |
KR20090123540A (ko) * | 2008-05-28 | 2009-12-02 | 삼성전자주식회사 | 유기 광전 변환막, 이를 구비하는 광전 변환 소자 및이미지 센서 |
JP5496189B2 (ja) | 2008-06-06 | 2014-05-21 | ビーエーエスエフ ソシエタス・ヨーロピア | 塩素化ナフタリンテトラカルボン酸誘導体、その製造、及び有機エレクトロニクスにおけるその使用 |
EP2346106A4 (de) * | 2008-10-30 | 2013-01-09 | Idemitsu Kosan Co | Organische solarbatterie |
JP5580976B2 (ja) * | 2008-10-30 | 2014-08-27 | 出光興産株式会社 | 有機薄膜太陽電池 |
KR101565931B1 (ko) | 2008-11-03 | 2015-11-06 | 삼성전자주식회사 | 광전변환 필름, 이를 구비하는 광전변환 소자 및 이미지 센서 |
US20120012183A1 (en) | 2009-03-31 | 2012-01-19 | Lintec Corporation | Organic thin-film solar cell and method of producing same |
DE102009022408A1 (de) * | 2009-05-18 | 2010-12-09 | Technische Universität Dresden | Organische Solarzelle oder Photodetektor mit verbesserter Absorption |
KR101012089B1 (ko) * | 2009-05-19 | 2011-02-07 | 한국과학기술연구원 | 일체형 코어/쉘 구조의 고분자-양자점 복합체를 포함하는 태양전지 소자 및 이의 제조방법 |
DE102009038633B4 (de) | 2009-06-05 | 2019-07-04 | Heliatek Gmbh | Photoaktives Bauelement mit organischen Doppel- bzw. Mehrfachmischschichten |
DE102009036110A1 (de) | 2009-06-05 | 2010-12-09 | Heliatek Gmbh | Licht absorbierendes organisches Bauelement |
EP2470584A4 (de) | 2009-08-28 | 2014-01-22 | Agency Science Tech & Res | Polymere halbleiter sowie vorrichtungen damit und verfahren dafür |
CN102549791B (zh) | 2009-08-28 | 2015-01-07 | 新加坡科技研究局 | 双极性聚合物半导体材料及有机电子器件 |
GB0915501D0 (en) * | 2009-09-04 | 2009-10-07 | Univ Warwick | Organic photosensitive optoelectronic devices |
JP5585066B2 (ja) * | 2009-12-14 | 2014-09-10 | コニカミノルタ株式会社 | 有機薄膜型太陽電池及びその製造方法 |
US20110220177A1 (en) * | 2010-03-10 | 2011-09-15 | United Solar Ovonic Llc | Tandem photovoltaic device with dual function semiconductor layer |
WO2011131185A1 (de) | 2010-04-21 | 2011-10-27 | Novaled Ag | Mischung zur herstellung einer dotierten halbleiterschicht |
KR101766709B1 (ko) | 2010-04-27 | 2017-08-09 | 노발레드 게엠베하 | 유기 반도전성 물질 및 전자 부품 |
EP2400575B1 (de) | 2010-06-24 | 2016-03-23 | heliatek GmbH | Optoelektronisches Bauelement mit organischen Schichten |
US8933436B2 (en) * | 2010-10-13 | 2015-01-13 | The Regents Of The University Of Michigan | Ordered organic-organic multilayer growth |
CN103262242A (zh) | 2010-12-03 | 2013-08-21 | 诺瓦莱德公开股份有限公司 | 在有机光伏器件中形成电互连的方法和用该方法制成的有机光伏器件 |
CN102142522B (zh) * | 2011-01-04 | 2014-09-03 | 复旦大学 | 一种采用金属吸收层的有机光电器件 |
WO2012092972A1 (de) | 2011-01-06 | 2012-07-12 | Heliatek Gmbh | Elektronisches oder optoelektronisches bauelement mit organischen schichten |
TWI526418B (zh) | 2011-03-01 | 2016-03-21 | 諾瓦發光二極體股份公司 | 有機半導體材料及有機組成物 |
DE102011013897A1 (de) * | 2011-03-11 | 2012-09-13 | Technische Universität Dresden | Organische Solarzelle |
CN102157659A (zh) * | 2011-03-24 | 2011-08-17 | 北京交通大学 | 一种全湿法制备的聚合物pled器件及其制备方法 |
KR101971629B1 (ko) | 2011-06-22 | 2019-04-23 | 노발레드 게엠베하 | 전자 소자 및 화합물 |
JP5814044B2 (ja) | 2011-08-16 | 2015-11-17 | 富士フイルム株式会社 | 光電変換素子およびその使用方法、撮像素子、光センサ |
KR101282041B1 (ko) * | 2011-10-31 | 2013-07-04 | 한국화학연구원 | 고효율 무/유기 이종접합 무기반도체 감응형 광전소자 및 그 제조방법 |
EP2787547A4 (de) * | 2011-11-28 | 2015-07-08 | Oceans King Lighting Science | Polymere solarzelle und verfahren zu ihrer herstellung |
WO2013083713A1 (en) | 2011-12-06 | 2013-06-13 | Novaled Ag | Organic photovoltaic device |
WO2013102985A1 (ja) * | 2012-01-06 | 2013-07-11 | 出光興産株式会社 | 有機光電変換素子及び有機薄膜太陽電池モジュール |
TW201341347A (zh) | 2012-03-15 | 2013-10-16 | Novaled Ag | 芳香胺三聯苯化合物及其在有機半導體元件中的應用 |
DE102012104118B4 (de) | 2012-05-10 | 2021-12-02 | Heliatek Gmbh | Lochtransportmaterialien für optoelektronische Bauelemente |
DE102012104247B4 (de) | 2012-05-16 | 2017-07-20 | Heliatek Gmbh | Halbleitendes organisches Material für optoelektronische Bauelemente |
DE102012105022A1 (de) | 2012-06-11 | 2013-12-12 | Heliatek Gmbh | Fahrzeug mit flexiblen organischen Photovoltaik-Modulen |
EP2706584A1 (de) | 2012-09-07 | 2014-03-12 | Novaled AG | Lastentransportierendes halbleitendes Material und Halbleitervorrichtung |
CN102911002A (zh) * | 2012-10-23 | 2013-02-06 | 中国科学院化学研究所 | 含萘环富勒烯衍生物及其制备方法与应用 |
US10196850B2 (en) | 2013-01-07 | 2019-02-05 | WexEnergy LLC | Frameless supplemental window for fenestration |
US10883303B2 (en) | 2013-01-07 | 2021-01-05 | WexEnergy LLC | Frameless supplemental window for fenestration |
US9691163B2 (en) | 2013-01-07 | 2017-06-27 | Wexenergy Innovations Llc | System and method of measuring distances related to an object utilizing ancillary objects |
US8923650B2 (en) | 2013-01-07 | 2014-12-30 | Wexenergy Innovations Llc | System and method of measuring distances related to an object |
US9230339B2 (en) | 2013-01-07 | 2016-01-05 | Wexenergy Innovations Llc | System and method of measuring distances related to an object |
US9845636B2 (en) | 2013-01-07 | 2017-12-19 | WexEnergy LLC | Frameless supplemental window for fenestration |
US9040710B2 (en) | 2013-03-11 | 2015-05-26 | Saudi Basic Industries Corporation | Aryloxy-phthalocyanines of group IV metals |
JP6014779B2 (ja) | 2013-03-11 | 2016-10-25 | サウジ ベイシック インダストリーズ コーポレイション | Iii族金属のアリールオキシ−フタロシアニン |
KR102251681B1 (ko) | 2013-08-23 | 2021-05-14 | 바스프 에스이 | 말단 헤테로아릴시아노비닐렌 기를 갖는 화합물 및 이의 유기 태양 전지에서의 용도 |
US9876184B2 (en) | 2013-08-28 | 2018-01-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Organic photosensitive device with an electron-blocking and hole-transport layer |
US9397309B2 (en) * | 2014-03-13 | 2016-07-19 | Universal Display Corporation | Organic electroluminescent devices |
JP6622229B2 (ja) | 2014-06-17 | 2019-12-18 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | N−フルオロアルキル置換されたジブロモナフタレンジイミドおよびそれらの半導体としての使用 |
FR3023067B1 (fr) * | 2014-06-26 | 2017-10-20 | Commissariat Energie Atomique | Cellules tandem multifils |
EP2963010B1 (de) | 2014-07-04 | 2018-02-21 | Novaled GmbH | Elektronische Vorrichtung und Verbindung |
DE102015113670A1 (de) * | 2014-08-19 | 2016-02-25 | Seoul Viosys Co., Ltd | Leuchtvorrichtung und Verfahren zu deren Herstellung |
WO2016083914A1 (en) | 2014-11-26 | 2016-06-02 | Basf Se | 4-oxoquinoline compounds |
CN105152122B (zh) * | 2015-06-25 | 2017-06-23 | 北京科技大学 | 一种无机/有机半导体纳米复合结构及其制备方法和应用 |
KR102356696B1 (ko) * | 2015-07-03 | 2022-01-26 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
KR102491494B1 (ko) | 2015-09-25 | 2023-01-20 | 삼성전자주식회사 | 유기 광전 소자용 화합물 및 이를 포함하는 유기 광전 소자 및 이미지 센서 |
KR102529631B1 (ko) | 2015-11-30 | 2023-05-04 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
EP3188270B1 (de) | 2015-12-30 | 2018-12-26 | Heliatek GmbH | Organisches halbleitendes material und dessen verwendung in organischen bauelementen |
EP3187496A1 (de) | 2015-12-30 | 2017-07-05 | Heliatek GmbH | Verbindung für fotoaktive organische elektronische bauelemente und fotoaktives organisches elektronisches bauelement enthaltend die verbindung |
EP3208863B1 (de) | 2016-02-22 | 2019-10-23 | Novaled GmbH | Ladungsübertragendes halbleitermaterial und elektronische vorrichtung damit |
EP3208862A1 (de) | 2016-02-22 | 2017-08-23 | Novaled GmbH | Ladungsübertragendes halbleitermaterial und elektronische vorrichtung damit |
KR102557864B1 (ko) | 2016-04-06 | 2023-07-19 | 삼성전자주식회사 | 화합물, 및 이를 포함하는 유기 광전 소자, 이미지 센서 및 전자 장치 |
CN109564952A (zh) * | 2016-04-06 | 2019-04-02 | 特里纳米克斯股份有限公司 | 用于至少一个对象的光学检测的检测器 |
US10236461B2 (en) | 2016-05-20 | 2019-03-19 | Samsung Electronics Co., Ltd. | Organic photoelectronic device and image sensor |
KR102605375B1 (ko) * | 2016-06-29 | 2023-11-22 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
KR102589215B1 (ko) | 2016-08-29 | 2023-10-12 | 삼성전자주식회사 | 유기 광전 소자, 이미지 센서 및 전자 장치 |
US10533364B2 (en) | 2017-05-30 | 2020-01-14 | WexEnergy LLC | Frameless supplemental window for fenestration |
US11145822B2 (en) | 2017-10-20 | 2021-10-12 | Samsung Electronics Co., Ltd. | Compound and photoelectric device, image sensor, and electronic device including the same |
RU188622U1 (ru) * | 2018-12-20 | 2019-04-18 | федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" (Университет ИТМО) | Светоизлучающий солнечный элемент |
DE102019120457A1 (de) | 2019-07-29 | 2021-02-04 | Heliatek Gmbh | Organische halbleitende Verbindung mit einer Indolgruppe, organisches optoelektronisches Bauelement mit einer solchen Verbindung, und Verwendung einer solchen Verbindung |
DE102019125715A1 (de) | 2019-09-24 | 2021-03-25 | Heliatek Gmbh | Verbindungen mit einer Furopyrrol- oder einer Thienopyrrolgruppe, optoelektronische Bauelemente mit einer solchen Verbindung, und Verwendung einer solchen Verbindung in optoelektronischen Bauelementen |
DE102020200053A1 (de) | 2020-01-06 | 2021-07-08 | Heliatek Gmbh | Verkapselungssystem für ein optoelektronisches Bauelement mit mindestens einer ersten Verkapselung und einer zweiten Verkapselung, optoelektronisches Bauelement mit einem solchen Verkapselungssystem |
DE102022135071A1 (de) | 2022-12-30 | 2024-07-11 | Heliatek Gmbh | Elektronisches Bauelement, Verfahren zum elektrischen Isolieren und Vorrichtung hierfür |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999049525A1 (en) * | 1998-03-20 | 1999-09-30 | Cambridge Display Technology Limited | Multilayer photovoltaic or photoconductive devices |
WO2000033396A1 (de) * | 1998-11-27 | 2000-06-08 | Forschungszentrum Juelich Gmbh | Organische solarzelle bzw. leuchtdiode |
US6278055B1 (en) * | 1998-08-19 | 2001-08-21 | The Trustees Of Princeton University | Stacked organic photosensitive optoelectronic devices with an electrically series configuration |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04297076A (ja) * | 1991-01-31 | 1992-10-21 | Toshiba Corp | 有機el素子 |
US6451415B1 (en) * | 1998-08-19 | 2002-09-17 | The Trustees Of Princeton University | Organic photosensitive optoelectronic device with an exciton blocking layer |
US6639357B1 (en) * | 2000-02-28 | 2003-10-28 | The Trustees Of Princeton University | High efficiency transparent organic light emitting devices |
JP3423279B2 (ja) * | 2000-09-01 | 2003-07-07 | 科学技術振興事業団 | 有機半導体薄膜太陽電池 |
JP2003264085A (ja) * | 2001-12-05 | 2003-09-19 | Semiconductor Energy Lab Co Ltd | 有機半導体素子、有機エレクトロルミネッセンス素子及び有機太陽電池 |
EP2284923B1 (de) * | 2005-04-13 | 2016-12-28 | Novaled GmbH | Anordnung für eine organische Leuchtdiode vom pin-Typ und Verfahren zum Herstellen |
US20090078312A1 (en) * | 2007-09-18 | 2009-03-26 | Basf Se | Verfahren zur herstellung von mit rylentetracarbonsaeurediimiden beschichteten substraten |
-
2004
- 2004-03-19 AU AU2004221377A patent/AU2004221377B2/en not_active Expired
- 2004-03-19 KR KR1020057017391A patent/KR100977905B1/ko active IP Right Grant
- 2004-03-19 JP JP2006504268A patent/JP2006520533A/ja active Pending
- 2004-03-19 EP EP04721821.9A patent/EP1611484B1/de not_active Expired - Lifetime
- 2004-03-19 WO PCT/DE2004/000574 patent/WO2004083958A2/de active Application Filing
- 2004-03-19 US US10/549,775 patent/US7675057B2/en active Active
- 2004-03-19 CN CN2004800072080A patent/CN1774823B/zh not_active Expired - Lifetime
- 2004-03-19 BR BRPI0408493A patent/BRPI0408493B1/pt active IP Right Grant
- 2004-03-19 DE DE102004014046A patent/DE102004014046B4/de not_active Expired - Lifetime
-
2005
- 2005-09-19 IN IN1022MU2005 patent/IN2005MU01022A/en unknown
-
2011
- 2011-08-17 JP JP2011178481A patent/JP2011228752A/ja active Pending
-
2014
- 2014-02-21 JP JP2014031439A patent/JP2014090218A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999049525A1 (en) * | 1998-03-20 | 1999-09-30 | Cambridge Display Technology Limited | Multilayer photovoltaic or photoconductive devices |
US6278055B1 (en) * | 1998-08-19 | 2001-08-21 | The Trustees Of Princeton University | Stacked organic photosensitive optoelectronic devices with an electrically series configuration |
WO2000033396A1 (de) * | 1998-11-27 | 2000-06-08 | Forschungszentrum Juelich Gmbh | Organische solarzelle bzw. leuchtdiode |
Non-Patent Citations (8)
Title |
---|
DRECHSEL J ET AL: "High efficiency organic solar cells based on single or multiple PIN structures" PREPARATION AND CHARACTERIZATION, ELSEVIER SEQUOIA, NL, [Online] Bd. 451-452, 22. März 2004 (2004-03-22), Seiten 515-517, XP004495157 ISSN: 0040-6090 Gefunden im Internet: URL:www.sciencedirect.com> [gefunden am 2005-08-25] * |
GEBEYEHU D ET AL: "Bulk-heterojunction photovoltaic devices based on donor-acceptor organic small molecule blends" SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, Bd. 79, Nr. 1, August 2003 (2003-08), Seiten 81-92, XP004446739 ISSN: 0927-0248 * |
HUANG JINGSONG ET AL: "Low-voltage organic electroluminescent devices using pin structures" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, Bd. 80, Nr. 1, 7. Januar 2002 (2002-01-07), Seiten 139-141, XP012030202 ISSN: 0003-6951 * |
LANE P A ET AL: "Electroabsorption studies of phthalocyanine/perylene solar cells" SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, Bd. 63, Nr. 1, Juni 2000 (2000-06), Seiten 3-13, XP004201242 ISSN: 0927-0248 * |
MEISSNER D ET AL .: "HIGHLY EFFICIENT MOLECULAR ORGANIC SOLAR CELLS" 16TH. E.C. PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. GLASCOW, UNITED KINGDOM, MAY 1 - 5, 2000, PROCEEDINGS OF THE INTERNATIONAL PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, LONDON : JAMES & JAMES LTD, GB, Bd. VOL. 1 OF 3. CONF. 16, 1. Mai 2000 (2000-05-01), Seiten 10-14, XP001138231 ISBN: 1-902916-18-2 * |
PFEIFFER M ET AL: "Controlled p-doping of pigment layers by cosublimation: Basic mechanisms and implications for their use in organic photovoltaic cells" SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, Bd. 63, Nr. 1, Juni 2000 (2000-06), Seiten 83-99, XP004201249 ISSN: 0927-0248 * |
STOLZ ROMAN L ET AL: "TRAPPING LIGHT IN POLYMER PHOTODIODES WITH SOFT EMBOSSED GRATINGS" ADVANCED MATERIALS, VCH VERLAGSGESELLSCHAFT, WEINHEIM, DE, Bd. 12, Nr. 3, 3. Februar 2000 (2000-02-03), Seiten 189-195, XP000923550 ISSN: 0935-9648 * |
YAKIMOV A ET AL: "High photovoltage multiple-heterojunction organic solar cells incorporating interfacial metallic nanoclusters" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, Bd. 80, Nr. 9, 4. März 2002 (2002-03-04), Seiten 1667-1669, XP012031741 ISSN: 0003-6951 in der Anmeldung erwähnt * |
Cited By (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008509559A (ja) * | 2004-08-05 | 2008-03-27 | ザ、トラスティーズ オブ プリンストン ユニバーシティ | 積層型有機感光性デバイス |
JP2006278584A (ja) * | 2005-03-28 | 2006-10-12 | Dainippon Printing Co Ltd | 有機薄膜太陽電池素子 |
US7800297B2 (en) | 2006-02-17 | 2010-09-21 | Solexant Corp. | Nanostructured electroluminescent device and display |
DE102007031220A1 (de) * | 2007-07-04 | 2009-01-08 | Novaled Ag | Chinoide Verbindungen und deren Verwendung in halbleitenden Matrixmaterialien, elektronischen und optoelektronischen Bauelementen |
DE102007031220B4 (de) | 2007-07-04 | 2022-04-28 | Novaled Gmbh | Chinoide Verbindungen und deren Verwendung in halbleitenden Matrixmaterialien, elektronischen und optoelektronischen Bauelementen |
US8083971B2 (en) | 2007-07-23 | 2011-12-27 | Basf Se | Use of rylene derivatives as active components in solar cells and photodetectors |
WO2010060421A1 (de) | 2008-11-30 | 2010-06-03 | Brandenburgische Technische Universität | Solarzelle mit elektrostatischen lokalfeldern im photoaktiven bereich |
DE102008060179A1 (de) | 2008-11-30 | 2010-07-29 | Brandenburgische Technische Universität Cottbus | Solarzelle mit elektrostatischen Lokalfeldern im photoaktiven Bereich |
DE102009051142A1 (de) | 2009-06-05 | 2010-12-09 | Heliatek Gmbh | Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung |
DE102009051142B4 (de) | 2009-06-05 | 2019-06-27 | Heliatek Gmbh | Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung |
WO2011015550A1 (de) | 2009-08-03 | 2011-02-10 | Heliatek Gmbh | Verdampfer system für organische schichten und bauelemente |
US9368729B2 (en) | 2009-10-13 | 2016-06-14 | Basf Se | Mixtures for producing photoactive layers for organic solar cells and organic photodetectors |
WO2011045253A1 (de) | 2009-10-13 | 2011-04-21 | Basf Se | Mischungen zur herstellung von photoaktiven schichten für organische solarzellen und organische photodetektoren |
DE102010028945A1 (de) | 2009-10-29 | 2010-12-09 | Heliatek Gmbh | Anwendungen für organische Photovoltaik |
WO2011064330A1 (de) | 2009-11-27 | 2011-06-03 | Heliatek Gmbh | Organisches photoaktives bauelement mit kavitäts-schichtsystem |
WO2011073219A1 (de) | 2009-12-16 | 2011-06-23 | Heliatek Gmbh | Photoaktives bauelement mit organischen schichten |
US10756284B2 (en) | 2009-12-16 | 2020-08-25 | Heliatek Gmbh | Photoactive component having organic layers |
DE102010007403A1 (de) | 2010-02-09 | 2011-08-11 | heliatek GmbH, 01139 | Aufdampfparameter für organische Solarzellen |
EP2385556A1 (de) | 2010-05-04 | 2011-11-09 | Heliatek GmbH | Photoaktives Bauelement mit organischen Schichten |
WO2011138021A2 (de) | 2010-05-04 | 2011-11-10 | Heliatek Gmbh | Photoaktives bauelement mit organischen schichten |
US9024181B2 (en) | 2010-05-04 | 2015-05-05 | Heliatek Gmbh | Photoactive component comprising organic layers |
WO2011161108A1 (de) | 2010-06-21 | 2011-12-29 | Heliatek Gmbh | Photoaktives bauelement mit mehreren transportschichtsystemen |
EP2398056A1 (de) | 2010-06-21 | 2011-12-21 | Heliatek GmbH | Organische Solarzelle mit mehreren Transportschichtsystemen |
US9112163B2 (en) | 2010-06-21 | 2015-08-18 | Heliatek Gmbh | Photoactive component having a plurality of transport layer systems |
WO2012089624A1 (de) | 2010-12-27 | 2012-07-05 | Heliatek Gmbh | Optoelektronisches bauelement mit dotierten schichten |
DE102010056519A1 (de) | 2010-12-27 | 2012-06-28 | Heliatek Gmbh | Optoelektronisches Bauelement mit dotierten Schichten |
JP2012109627A (ja) * | 2012-03-09 | 2012-06-07 | Dainippon Printing Co Ltd | 有機薄膜太陽電池素子 |
DE102012103448A1 (de) | 2012-04-19 | 2013-10-24 | Heliatek Gmbh | Verfahren zur Optimierung von in Reihe geschalteten, photoaktiven Bauelementen auf gekrümmten Oberflächen |
WO2013179223A2 (de) | 2012-05-30 | 2013-12-05 | Heliatek Gmbh | Solarmodul zur anordnung auf formteil aus beton |
WO2013179220A2 (de) | 2012-05-30 | 2013-12-05 | Heliatek Gmbh | Solarmodul zur anordnung auf formteilen |
WO2013186668A1 (de) | 2012-06-11 | 2013-12-19 | Heliatek Gmbh | Filtersystem für photoaktive bauelemente |
WO2014006566A1 (de) | 2012-07-02 | 2014-01-09 | Heliatek Gmbh | Elektrodenanordnung für optoelektronische bauelemente |
DE102012105810A1 (de) | 2012-07-02 | 2014-01-02 | Heliatek Gmbh | Transparente Elektrode für optoelektronische Bauelemente |
DE102012105809A1 (de) | 2012-07-02 | 2014-01-02 | Heliatek Gmbh | Transparente Elektrode für optoelektronische Bauelemente |
US11355719B2 (en) | 2012-07-02 | 2022-06-07 | Heliatek Gmbh | Transparent electrode for optoelectronic components |
DE102012105812A1 (de) | 2012-07-02 | 2014-01-02 | Heliatek Gmbh | Elektrodenanordnung für optoelektronische Bauelemente |
WO2014006565A2 (de) | 2012-07-02 | 2014-01-09 | Heliatek Gmbh | Transparente elektrode für optoelektronische bauelemente |
DE102012106607B4 (de) | 2012-07-20 | 2024-04-04 | Heliatek Gmbh | Verfahren zur Versiegelung von Modulen mit optoelektronischen Bauelementen |
DE102012106607A1 (de) | 2012-07-20 | 2014-01-23 | Heliatek Gmbh | Verfahren zur Versiegelung von Modulen mit optoelektronischen Bauelementen |
DE102012106815A1 (de) | 2012-07-26 | 2014-01-30 | Heliatek Gmbh | Verfahren zur Kontaktierung optoelektronischer Bauelemente |
WO2014128278A1 (de) | 2013-02-21 | 2014-08-28 | Heliatek Gmbh | Optoelektronisches bauelement |
US10950811B2 (en) | 2013-02-21 | 2021-03-16 | Heliatek Gmbh | Optoelectronic component |
DE102013101714A1 (de) | 2013-02-21 | 2014-08-21 | Heliatek Gmbh | Verfahren zur Optimierung von Absorberschichten in optoelektronischen Bauelementen |
WO2014173915A1 (de) | 2013-04-23 | 2014-10-30 | Heliatek | Verfahren zur anordnung von optoelektronischen bauelementen auf formkörpern |
DE102013104094A1 (de) | 2013-04-23 | 2014-10-23 | Heliatek Gmbh | Verfahren zur Anordnung von optoelektronischen Bauelementen auf Formkörpern |
DE102013110373A1 (de) | 2013-09-19 | 2015-03-19 | Heliatek Gmbh | Optoelektronisches Bauelement |
DE102013111164A1 (de) | 2013-10-09 | 2015-05-07 | Heliatek Gmbh | Verfahren zur Herstellung von Kontaktlöchern |
DE102015116418A1 (de) | 2014-09-26 | 2016-03-31 | Heliatek Gmbh | Verfahren zum Aufbringen der Schutzschicht, Schutzschicht selbst und Halbfabrikat mit einer Schutzschicht |
WO2016045668A1 (de) | 2014-09-26 | 2016-03-31 | Heliatek Gmbh | Verfahren zum aufbringen einer schutzschicht, schutzschicht selbst und halbfabrikat mit einer schutzschicht |
EP3196013A1 (de) | 2016-01-20 | 2017-07-26 | AGC Glass Europe | Organische photovoltaische anordnung und verfahren zur herstellung |
WO2017125522A1 (en) | 2016-01-20 | 2017-07-27 | Agc Glass Europe | Organic photovoltaic assembly and process of manufacture |
EP3196012A1 (de) | 2016-01-20 | 2017-07-26 | AGC Glass Europe | Organische fotovoltaische anordnung und verfahren zur herstellung |
WO2017125525A1 (en) | 2016-01-20 | 2017-07-27 | Agc Glass Europe | Organic photovoltaic assembly and process of manufacture |
WO2017186592A1 (en) | 2016-04-29 | 2017-11-02 | Agc Glass Europe | Assembly |
WO2018055214A1 (de) | 2016-09-26 | 2018-03-29 | Heliatek Gmbh | Organisches bauelement zu umwandlung von licht in elektrische energie mit verbesserter effizienz und lebensdauer bei teilverschattung |
DE102016118177A1 (de) | 2016-09-26 | 2018-03-29 | Heliatek Gmbh | Organisches Bauelement zur Umwandlung von Licht in elektrische Energie mit verbesserter Effizienz und Lebensdauer bei Teilverschattung |
WO2018220148A1 (de) | 2017-05-31 | 2018-12-06 | Heliatek Gmbh | Polyphenole und polyamino-derivate in organischen optoelektronischen bauelementen |
EP3410505A1 (de) | 2017-05-31 | 2018-12-05 | Heliatek GmbH | Polyphenole und polyamino-derivate in organischen optoelektronischen bauelementen |
EP3617214A1 (de) | 2018-08-30 | 2020-03-04 | Heliatek GmbH | Organisches halbleitendes material und dessen synthese und organisches halbleitendes bauelement mit dem material |
US11401284B2 (en) | 2018-08-30 | 2022-08-02 | Heliatek Gmbh | Organic semiconducting material and its synthesis and organic semiconducting component with the material |
WO2020119865A2 (de) | 2018-12-14 | 2020-06-18 | Heliatek Gmbh | Stabilisierung laserstrukturierter organischer photopholtaik |
DE102018132342A1 (de) | 2018-12-14 | 2020-06-18 | Heliatek Gmbh | Stabilisierung laserstrukturierter organischer Photovoltaik |
WO2020233748A1 (de) | 2019-05-17 | 2020-11-26 | Heliatek Gmbh | Säule mit mindestens einem photovoltaischen element und verwendung eines photovoltaischen elements an einer säule |
DE202019102792U1 (de) | 2019-05-17 | 2020-05-20 | Heliatek Gmbh | Säule mit mindestens einem photovoltaischen Element und Verwendung eines photovoltaischen Elements an einer Säule |
DE102019113016A1 (de) * | 2019-05-17 | 2020-11-19 | Heliatek Gmbh | Säule mit mindestens einem photovoltaischen Element und Verwendung eines photovoltaischen Elements an einer Säule |
WO2021083462A1 (de) | 2019-10-30 | 2021-05-06 | Heliatek Gmbh | Photovoltaisches element mit verbesserter effizienz bei verschattung und verfahren zur herstellung eines solchen photovoltaischen elements |
WO2021089089A1 (de) | 2019-11-05 | 2021-05-14 | Heliatek Gmbh | Optoelektronisches bauelement, sowie verfahren zur kontaktierung eines optoelektronischen bauelements |
US12029053B2 (en) | 2019-11-05 | 2024-07-02 | Heliatek Gmbh | Optoelectronic component and method for contacting an optoelectronic component |
WO2022048699A1 (de) | 2019-12-12 | 2022-03-10 | Heliatek Gmbh | Beschichtung für ein optoelektronisches bauelement, verfahren zur herstellung einer solchen beschichtung, optoelektronisches bauelement mit einer solchen beschichtung |
DE102019135574A1 (de) * | 2019-12-20 | 2021-06-24 | Heliatek Gmbh | Verfahren zum Herstellen einer heterogen strukturierten Beschichtung eines optoelektronischen Bauelements, sowie ein optoelektronisches Bauelement mit einer solchen Beschichtung |
DE102020102494A1 (de) | 2020-01-31 | 2021-08-05 | Heliatek Gmbh | Verfahren zum Überprüfen eines photovoltaischen Elements, sowie ein photovoltaisches Element,überprüft nach einem solchen Verfahren |
WO2021151438A1 (de) | 2020-01-31 | 2021-08-05 | Heliatek Gmbh | Verfahren zum überprüfen eines photovoltaischen elements, sowie ein photovoltaisches element, überprüft nach einem solchen verfahren |
DE102020108847A1 (de) | 2020-03-31 | 2021-09-30 | Heliatek Gmbh | Anordnung von Zellen in einem photovoltaischen Element |
EP3890041A1 (de) | 2020-03-31 | 2021-10-06 | Heliatek GmbH | Neue chemische verbindungen, optoelektronische elemente mit mindestens einer neuen chemischen verbindung und verwendung von neuen chemischen verbindungen in einem optoelektronischen element |
WO2021198388A1 (en) | 2020-03-31 | 2021-10-07 | Heliatek Gmbh | New chemical compounds, optoelectronic elements comprising at least one new chemical compound, and use of new chemical compounds in an optoelectronic element |
WO2022042804A1 (de) | 2020-08-31 | 2022-03-03 | Heliatek Gmbh | Chemische verbindung, verwendung mindestens einer solchen chemischen verbindung in einem optoelektronischen bauelement, und optoelektronisches bauelement mit mindestens einer solchen chemischen verbindung |
WO2022111765A1 (de) | 2020-11-30 | 2022-06-02 | Heliatek Gmbh | Feldbreitenanpassung von zellen in einem photovoltaischen element |
DE102020131742A1 (de) | 2020-11-30 | 2022-06-02 | Heliatek Gmbh | Feldbreitenanpassung von Zellen in einem photovoltaischen Element |
DE102020135118A1 (de) | 2020-12-30 | 2022-06-30 | Heliatek Gmbh | Verbindung für ein optoelektronisches Bauelement und optoelektronisches Bauelement enthaltend die Verbindung |
WO2022144423A1 (de) | 2020-12-30 | 2022-07-07 | Heliatek Gmbh | Verbindung für ein optoelektronisches bauelement und optoelektronisches bauelement enthaltend die verbindung |
WO2023072340A1 (de) | 2021-10-25 | 2023-05-04 | Heliatek Gmbh | ELEKTRISCH LEITFÄHIGE BESCHICHTUNG EINES ELEKTRISCHEN BAUELEMENTS ZUR ELEKTRISCH LEITFÄHIGEN KONTAKTIERUNG EINER AUßERHALB DER BESCHICHTUNG ANGEORDNETEN SAMMELSCHIENE |
DE102021127720A1 (de) | 2021-10-25 | 2023-04-27 | Heliatek Gmbh | Elektrisch leitfähige Beschichtung eines elektrischen Bauelements zur elektrisch leitfähigen Kontaktierung einer außerhalb der Beschichtung angeordneten Sammelschiene |
DE102022100149A1 (de) | 2022-01-04 | 2023-07-06 | Heliatek Gmbh | Verfahren zur Herstellung einer photoaktiven Schicht in einem Schichtsystem eines organischen elektronischen Bauelements |
WO2023131379A1 (de) | 2022-01-04 | 2023-07-13 | Heliatek Gmbh | Verfahren zur herstellung einer photoaktiven schicht in einem schichtsystem eines organischen elektronischen bauelements |
WO2024002432A1 (de) | 2022-06-30 | 2024-01-04 | Heliatek Gmbh | Optoelektronisches bauelement mit einer als planar heterojunction ausgebildeten photoaktiven schicht |
DE102022116403A1 (de) | 2022-06-30 | 2024-01-04 | Heliatek Gmbh | Optoelektronisches Bauelement mit einer als planar Heterojunction ausgebildeten photoaktiven Schicht |
WO2024067923A1 (de) | 2022-09-30 | 2024-04-04 | Heliatek Gmbh | Chemische verbindung, optoelektronisches bauelement mit mindestens einer solchen chemischen verbindung, und verwendung mindestens einer solchen chemischen verbindung in einem optoelektronischen bauelement |
DE102022125417A1 (de) | 2022-09-30 | 2024-04-04 | Heliatek Gmbh | Chemische Verbindung, optoelektronisches Bauelement mit mindestens einer solchen chemischen Verbindung, und Verwendung mindestens einer solchen chemischen Verbindung in einem optoelektronischen Bauelement |
Also Published As
Publication number | Publication date |
---|---|
KR20050116147A (ko) | 2005-12-09 |
WO2004083958A3 (de) | 2005-11-10 |
AU2004221377A1 (en) | 2004-09-30 |
IN2005MU01022A (de) | 2006-05-12 |
EP1611484A2 (de) | 2006-01-04 |
DE102004014046A1 (de) | 2004-09-30 |
JP2006520533A (ja) | 2006-09-07 |
EP1611484B1 (de) | 2021-11-10 |
BRPI0408493A (pt) | 2006-04-04 |
JP2011228752A (ja) | 2011-11-10 |
BRPI0408493B1 (pt) | 2018-09-18 |
KR100977905B1 (ko) | 2010-08-24 |
AU2004221377B2 (en) | 2009-07-16 |
CN1774823A (zh) | 2006-05-17 |
US7675057B2 (en) | 2010-03-09 |
JP2014090218A (ja) | 2014-05-15 |
US20070090371A1 (en) | 2007-04-26 |
CN1774823B (zh) | 2010-09-08 |
DE102004014046B4 (de) | 2013-04-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1611484B1 (de) | Photoaktives bauelement mit organischen schichten | |
EP2398056B1 (de) | Organische Solarzelle mit mehreren Transportschichtsystemen | |
EP2385556B1 (de) | Photoaktives Bauelement mit organischen Schichten | |
EP2438633B1 (de) | Photoaktives bauelement mit invertierter schichtfolge und verfahren zu seiner herstellung | |
EP2513995B1 (de) | Photoaktives bauelement mit organischen schichten | |
EP1634343A2 (de) | Tandemsolarzelle mit einer gemeinsamen organischen elektrode | |
DE10209789A1 (de) | Photoaktives Bauelement mit organischen Schichten | |
DE112012003329T5 (de) | Tandem-Solarzelle mit Graphen-Zwischenschicht und Verfahren zum Herstellen davon | |
EP1631996B1 (de) | Organische solarzelle mit einer zwischenschicht mit asymmetrischen transporteigenschaften | |
EP2400575B1 (de) | Optoelektronisches Bauelement mit organischen Schichten | |
EP2959520B1 (de) | Optoelektronisches bauelement | |
EP2867932B1 (de) | Transparente elektrode für optoelektronische bauelemente | |
DE102009038633B4 (de) | Photoaktives Bauelement mit organischen Doppel- bzw. Mehrfachmischschichten | |
WO2014006566A1 (de) | Elektrodenanordnung für optoelektronische bauelemente | |
DE102008034256A1 (de) | Photoaktives Bauelement mit organischen Schichten | |
DE102012105810B4 (de) | Transparente Elektrode für optoelektronische Bauelemente | |
DE102012105809B4 (de) | Organisches optoelektronisches Bauelement mit transparenter Gegenelektrode und transparenter Elektrodenvorrichtung | |
WO2010012279A1 (de) | Organisches photoaktives bauelement, insbesondere organische solarzelle oder organischer photodetektor | |
DE102012103448B4 (de) | Verfahren zur Optimierung von in Reihe geschalteten, photoaktiven Bauelementen auf gekrümmten Oberflächen | |
EP4147283A1 (de) | Schichtsystem für ein organisches elektronisches bauelement | |
WO2012093180A1 (de) | Elektronisches oder optoelektronisches bauelement mit organischen schichten | |
DE102013101714A1 (de) | Verfahren zur Optimierung von Absorberschichten in optoelektronischen Bauelementen | |
DE102013110373A1 (de) | Optoelektronisches Bauelement |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 20048072080 Country of ref document: CN Ref document number: 1020057017391 Country of ref document: KR Ref document number: 2006504268 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1022/MUMNP/2005 Country of ref document: IN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004721821 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004221377 Country of ref document: AU |
|
ENP | Entry into the national phase |
Ref document number: 2004221377 Country of ref document: AU Date of ref document: 20040319 Kind code of ref document: A |
|
WWP | Wipo information: published in national office |
Ref document number: 2004221377 Country of ref document: AU |
|
WWP | Wipo information: published in national office |
Ref document number: 1020057017391 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2004721821 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: PI0408493 Country of ref document: BR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2007090371 Country of ref document: US Ref document number: 10549775 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 10549775 Country of ref document: US |