JP2008509559A - 積層型有機感光性デバイス - Google Patents
積層型有機感光性デバイス Download PDFInfo
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- JP2008509559A JP2008509559A JP2007524923A JP2007524923A JP2008509559A JP 2008509559 A JP2008509559 A JP 2008509559A JP 2007524923 A JP2007524923 A JP 2007524923A JP 2007524923 A JP2007524923 A JP 2007524923A JP 2008509559 A JP2008509559 A JP 2008509559A
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H10K85/211—Fullerenes, e.g. C60
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H—ELECTRICITY
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
Description
ff = {ImaxVmax}/{IscVoc} (1)
で定義される。実際の使用に際しては、IscおよびVocは同時には絶対に得られないため、ffは常に1未満である。しかしながらffが1に近づくにつれて、デバイスの直列抵抗または内部抵抗がより小さくなり、したがって最適条件の下で負荷にIscとVocの積のより大きいパーセント割合が引き渡される。Pincがデバイスに入射するパワーである場合、そのデバイスの電力効率ηpは、
ηp = ff*(Isc*Voc)/Pinc
で計算することができる。
ηp〜ηEXT=ηA * ηED * ηcc
ηEXT=ηA * ηINT
となる。
本発明の一実施形態では、有効な光電池が提供される。2つの積層型(スタック)ハイブリッドプレーナ混合ヘテロ接合セルを備えたセルを、透明伝導性ITOをプリコートしたガラス基板の上に作製した。このデバイスは、ITO/75Å CuPc/122Å CuPc:C60(重量で1.2:1)/80Å C60/50Å PTCBI/5Å Ag/50Å m-MTDATA:F4-TCNQ/60Å CuPc/132Å CuPc:C60(重量で1.2:1)/160Å C60/75Å BCP/Agの構造を有している。カソードから遠く離れたセルはCuPcが若干多く、550nmから750nmまでのスペクトル領域で吸収をしている。一方、カソードにより近いセルはC60が多く、350nmから550nmまでのスペクトル領域で吸収をしている。1ないし4sun模擬AM1.5G太陽照明の下で(5.6±0.3)%の最大電力効率が、測定された。
110、210 基板
115 アノード
120 アノード平坦化層
125 ドナー層
130 アクセプタ層
135 阻止層
140 カソード
200 有機光活性デバイス(有機セル)
220、260 電極
230 第1の有機光活性領域
231 第1の有機層(アクセプタ層)
232 第2の有機層(混合有機層)
233 第3の有機層(ドナー層)
234 第1の励起子阻止層
240 介在層
241 ナノ粒子
250 第2の光活性領域
251 アクセプタ層
252 混合有機層
253 ドナー層
253 有機アクセプタ層
254 第2の励起子阻止層(励起子阻止材料)
810、820 PVデバイス
815、825 直角光路長
910 100%CuPc(CuPc単一層)
920 62%CuPc
930 40%CuPc
940 33%CuPc
950 21%CuPc
Claims (20)
- アノードと、
カソードと、
前記アノードと前記カソードの間に配置され且つそれらに電気接続された複数の積層型有機光活性領域であって、各有機光活性領域が有機アクセプタ材料および有機ドナー材料を含む、複数の積層型有機光活性領域と、
各有機光活性領域の前記有機アクセプタ材料に隣接し且つ前記有機アクセプタ材料と物理的に直接接触して配置された励起子阻止層と
を含むデバイスであって、
前記カソードに最も近い励起子阻止層以外の各励起子阻止層のLUMOが、前記アクセプタ材料のLUMOよりも最大でも約0.3eV大きいだけであるデバイス。 - 各光活性領域が、
有機アクセプタ材料と有機ドナー材料の混合物を含む第1の有機層と、
前記第1の有機層と直接接触している第2の有機層であって、前記第1の有機層の有機ドナー材料の非混合層を含む第2の有機層と、
前記第1の有機層と直接接触している第3の有機層であって、前記第1の有機層の有機アクセプタ材料の非混合層を含む第3の有機層と
をさらに含み、
前記励起子阻止層が、前記第3の有機層に隣接し且つ前記第3の有機層と物理的に直接接触して配置された、請求項1に記載のデバイス。 - 各光活性領域が、
有機アクセプタ材料と有機ドナー材料の混合物を含む第1の有機層と、
前記第1の有機層と直接接触している第2の有機層であって、前記第1の有機層の有機ドナー材料の非混合層を含む第2の有機層と
をさらに含み、前記励起子阻止層が、前記第1の有機層に隣接し且つ前記第1の有機層と物理的に直接接触して配置された、請求項1に記載のデバイス。 - 各光活性領域が、
有機アクセプタ材料と有機ドナー材料の混合物を含む第1の有機層と、
前記第1の有機層と直接接触している第2の有機層であって、前記第1の有機層の有機アクセプタ材料の非混合層を含む第2の有機層と
からなり、前記励起子阻止層が、前記第2の有機層に隣接し且つ前記第2の有機層と物理的に直接接触して配置された、請求項1に記載のデバイス。 - 各光活性領域が、
前記アクセプタ・ドナー材料の非混合層を含む第1の有機層と、
前記有機ドナー材料の非混合層を含み、前記第1の有機層と直接接触している第2の有機層と
をさらに含み、前記励起子阻止層が、前記第1の有機層に隣接し且つ前記第1の有機層と物理的に直接接触して配置された、請求項1に記載のデバイス。 - 各光活性領域が、
有機アクセプタ材料と有機ドナー材料の混合物を含む第1の有機層からなり、
前記励起子阻止層が、前記第1の有機層に隣接し且つ前記第1の有機層と物理的に直接接触して配置された、請求項1に記載のデバイス。 - 積層型有機光活性領域の隣接する各対の間に配置され、且つ前記各対に電気的に接続された電荷再結合ゾーンをさらに備えた、請求項1に記載のデバイス。
- 前記カソードに最も近い前記励起子阻止層の材料がBCPを含み、その他のすべての励起子阻止層の材料がPTCBIを含む、請求項1に記載のデバイス。
- 前記電荷再結合ゾーンが、ナノ粒子がその中に分散されているp-ドープ有機材料の層を含む、請求項7に記載のデバイス。
- 前記p-ドープ有機材料が、F4-TCNQでドープされたm-MTDATAである、請求項9に記載のデバイス。
- 前記p-ドープ有機材料が、PTCDAでドープされたBTQBTである、請求項9に記載のデバイス。
- 各有機光活性領域の前記有機ドナー材料がCuPcであり、且つ各有機光活性領域の前記有機アクセプタ材料がC60である、請求項1に記載のデバイス。
- 前記カソードに最も近い前記励起子阻止材料のLUMOが、隣接するアクセプタ材料のLUMOより最大でも約0.3eV大きいだけである、請求項1に記載のデバイス。
- 前記カソードに最も近い前記励起子阻止材料のLUMOが、隣接するアクセプタ材料のLUMOよりも約0.3eVより大きい、請求項1に記載のデバイス。
- 前記有機アクセプタ材料が、フラーレン、ペリレン、カタ縮合共役分子系、ピレン、コロネン、およびそれらの官能化誘導体からなる群から選択される、請求項1に記載のデバイス。
- 前記有機ドナー材料が、金属含有ポルフィリン類、金属非含有ポルフィリン類、ルブレン、金属含有フタロシアニン類、金属非含有フタロシアニン類、ジアミン類、およびナフタロシアニン類を含めたそれらの官能化誘導体からなる群から選択される、請求項1に記載のデバイス。
- 前記デバイスが光起電性デバイスである、請求項1に記載のデバイス。
- 前記デバイスが光検出器である、請求項1に記載のデバイス。
- 前記カタ縮合共役分子系が線状ポリアセン類を含む、請求項15に記載のデバイス。
- 前記複数の積み重ねられた有機光活性領域が、
第1の有機アクセプタ材料および第1の有機ドナー材料を含む第1の有機光活性領域と、
第2の有機アクセプタ材料および第2の有機ドナー材料を含む第2の有機光活性領域と
を含み、
前記第1の有機アクセプタ材料、前記第1の有機ドナー材料、前記第2の有機アクセプタ材料、および第2の有機ドナー材料が異なる材料である、請求項1に記載のデバイス。
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US9728735B2 (en) | 2011-01-26 | 2017-08-08 | Massachusetts Institute Of Technology | Transparent photovoltaic cells |
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US10665801B2 (en) | 2011-01-26 | 2020-05-26 | Massachusetts Institute Of Technology | Transparent photovoltaic cells |
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US11424423B2 (en) | 2011-01-26 | 2022-08-23 | Massachusetts Institute Of Technology | Transparent photovoltaic cells |
JP2014506736A (ja) * | 2011-02-21 | 2014-03-17 | ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン | 電子伝導性励起子遮蔽層を有する有機光起電力電池 |
JP2015142110A (ja) * | 2014-01-30 | 2015-08-03 | 富士通株式会社 | イメージセンサ及びその製造方法 |
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ES2345300T3 (es) | 2010-09-20 |
US7816715B2 (en) | 2010-10-19 |
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US7196366B2 (en) | 2007-03-27 |
AU2005271600A1 (en) | 2006-02-16 |
AR051001A1 (es) | 2006-12-13 |
DE602005008615D1 (de) | 2008-09-11 |
HK1113227A1 (en) | 2008-09-26 |
AU2010241522A1 (en) | 2010-12-09 |
TWI370536B (en) | 2012-08-11 |
KR101126838B1 (ko) | 2012-03-28 |
WO2006017530B1 (en) | 2006-05-11 |
AU2005271600B2 (en) | 2010-08-19 |
ES2313405T3 (es) | 2009-03-01 |
US20060027834A1 (en) | 2006-02-09 |
WO2006017530A1 (en) | 2006-02-16 |
TW200620627A (en) | 2006-06-16 |
DE602005021929D1 (de) | 2010-07-29 |
CN101044640A (zh) | 2007-09-26 |
BRPI0513644A (pt) | 2008-05-13 |
CN101044640B (zh) | 2010-06-02 |
EP1978561A1 (en) | 2008-10-08 |
AU2010241522B2 (en) | 2012-05-10 |
JP5270157B2 (ja) | 2013-08-21 |
KR20070058485A (ko) | 2007-06-08 |
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