JP2014506736A - 電子伝導性励起子遮蔽層を有する有機光起電力電池 - Google Patents
電子伝導性励起子遮蔽層を有する有機光起電力電池 Download PDFInfo
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- JP2014506736A JP2014506736A JP2013555487A JP2013555487A JP2014506736A JP 2014506736 A JP2014506736 A JP 2014506736A JP 2013555487 A JP2013555487 A JP 2013555487A JP 2013555487 A JP2013555487 A JP 2013555487A JP 2014506736 A JP2014506736 A JP 2014506736A
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- 238000013086 organic photovoltaic Methods 0.000 title description 7
- 239000000463 material Substances 0.000 claims abstract description 93
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 claims abstract description 44
- 230000005693 optoelectronics Effects 0.000 claims abstract description 25
- 239000004020 conductor Substances 0.000 claims abstract description 22
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- GGNDPFHHUHTCIO-UHFFFAOYSA-N 1h-benzimidazole;perylene-3,4,9,10-tetracarboxylic acid Chemical compound C1=CC=C2NC=NC2=C1.C1=CC=C2NC=NC2=C1.C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O GGNDPFHHUHTCIO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 33
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- IHXWECHPYNPJRR-UHFFFAOYSA-N 3-hydroxycyclobut-2-en-1-one Chemical compound OC1=CC(=O)C1 IHXWECHPYNPJRR-UHFFFAOYSA-N 0.000 claims description 10
- 229920000767 polyaniline Polymers 0.000 claims description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 9
- 239000011368 organic material Substances 0.000 claims description 9
- 229920001940 conductive polymer Polymers 0.000 claims description 8
- BKMIWBZIQAAZBD-UHFFFAOYSA-N diindenoperylene Chemical group C12=C3C4=CC=C2C2=CC=CC=C2C1=CC=C3C1=CC=C2C3=CC=CC=C3C3=CC=C4C1=C32 BKMIWBZIQAAZBD-UHFFFAOYSA-N 0.000 claims description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 8
- 229910001887 tin oxide Inorganic materials 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 7
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 6
- -1 perfluoro copper phthalocyanine Chemical compound 0.000 claims description 6
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 claims description 5
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 claims description 5
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 5
- XBGNOMBPRQVJSR-UHFFFAOYSA-N 2-(4-nitrophenyl)butanoic acid Chemical compound CCC(C(O)=O)C1=CC=C([N+]([O-])=O)C=C1 XBGNOMBPRQVJSR-UHFFFAOYSA-N 0.000 claims description 4
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 4
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 4
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 4
- 229910003472 fullerene Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 4
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 4
- 229960002796 polystyrene sulfonate Drugs 0.000 claims description 4
- 239000011970 polystyrene sulfonate Substances 0.000 claims description 4
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 claims description 4
- YTDHEFNWWHSXSU-UHFFFAOYSA-N 2,3,5,6-tetrachloroaniline Chemical compound NC1=C(Cl)C(Cl)=CC(Cl)=C1Cl YTDHEFNWWHSXSU-UHFFFAOYSA-N 0.000 claims description 3
- 239000010406 cathode material Substances 0.000 claims description 3
- FVDOBFPYBSDRKH-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid Chemical compound C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O FVDOBFPYBSDRKH-UHFFFAOYSA-N 0.000 claims description 3
- INAAIJLSXJJHOZ-UHFFFAOYSA-N pibenzimol Chemical compound C1CN(C)CCN1C1=CC=C(N=C(N2)C=3C=C4NC(=NC4=CC=3)C=3C=CC(O)=CC=3)C2=C1 INAAIJLSXJJHOZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000002322 conducting polymer Substances 0.000 claims 1
- 229910052755 nonmetal Inorganic materials 0.000 claims 1
- DBKJWQFJPOYHCX-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid;dihydrate Chemical compound O.O.C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O DBKJWQFJPOYHCX-UHFFFAOYSA-N 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract description 20
- 239000000370 acceptor Substances 0.000 description 54
- 239000000872 buffer Substances 0.000 description 22
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 20
- 230000032258 transport Effects 0.000 description 18
- 238000004770 highest occupied molecular orbital Methods 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 10
- 230000005684 electric field Effects 0.000 description 9
- 238000005215 recombination Methods 0.000 description 9
- 230000006798 recombination Effects 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000010791 quenching Methods 0.000 description 4
- 230000000171 quenching effect Effects 0.000 description 4
- RTZYCRSRNSTRGC-LNTINUHCSA-K (z)-4-oxopent-2-en-2-olate;ruthenium(3+) Chemical compound [Ru+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O RTZYCRSRNSTRGC-LNTINUHCSA-K 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011532 electronic conductor Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- JEDHEMYZURJGRQ-UHFFFAOYSA-N 3-hexylthiophene Chemical compound CCCCCCC=1C=CSC=1 JEDHEMYZURJGRQ-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- VXKWOFAYEJQNAH-UHFFFAOYSA-N perylene-1,4,5,8-tetracarboxylic acid Chemical compound OC(=O)C1=CC(C2=CC(C(=O)O)=CC=3C2=C2C=CC=3)=C3C2=C(C(O)=O)C=CC3=C1C(O)=O VXKWOFAYEJQNAH-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mathematical Physics (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【選択図】図1
Description
本願は、どちらもその全体が参照によって本願に引用される、2011年2月21日に出願された米国仮出願番号61/444,899、および2011年4月26日に出願された米国仮出願番号61/479,237の優先権の利益を主張するものである。
本発明は、エネルギー省によって認定された契約番号DE−SC00000957、およびDE−SC0001013に基づく米国政府支援を得てなされた。該政府は、本発明に関して一定の権利を有する。
本願に係る発明は、産学連携研究協定に参加した次の一つ以上の団体、つまりミシガン大学、グローバルフォトニックエネルギー社によって、のおかげで、および/または、との関係においてなされた。前記合意は発明がなされた日以前において有効であり、本願に係る発明は合意の範囲内において行われた活動の結果としてなされたものである。
式中、実際の使用においてISCとVOCが同時に得られることは決してないので、FFは常に1未満である。FF が1に近づくにつれて、前記デバイスはより直列性や内部抵抗が小さくなり、よってより大きなパーセンテージのISCとVOCの積を標準条件下で負荷に供給することになる。式中、Pincをデバイスに供給される電力とすると、デバイスの電力効率ηPは、
・スペクトル修正電力変換効率が、1sun、AM1.5Gのもとで少なくとも5.0%、または短絡電流が少なくとも7.5mA/cm2である。
ガラス基板上にプレコートした厚さ150nmの酸化インジウムスズ(ITO)の層上にデバイスを成長させた。堆積する前に、前記ITO表面を界面活性剤と一連の溶媒で洗浄し、MoO3が約0.1nm/sで熱的に蒸発している高真空チャンバー(ベース圧力<10−7Torr)に入れる前に紫外線−オゾンに10分間曝した。次に2,4−ビス[4−(N−フェニルナフチルアミノ)−2,6−ジヒドロフェニル]スクアライン(1−NPSQ、図2差し込み図の分子構造式参照)フィルムを加熱した1,2−ジクロロベンゼンの6.5mg/ml溶液からスピンコートするN2グローブボックスに写し、110℃のホットプレート上で5分間熱処理しナノ結晶形態を成長させた。
Claims (34)
- 重なり合ったアノードおよびカソードを有する二つの電極と、
前記二つの電極の間の光活性領域と、
電子を伝導させ励起子を遮蔽する遮蔽領域と、
を有する有機感光光電子デバイスであって、
前記遮蔽領域は、少なくとも一つの有機材料を前記光活性領域および前記カソードの間に含み、
前記有機遮蔽領域は、少なくとも一つの電子伝導性材料を含む、有機感光光電子デバイス。 - 前記光活性領域は、少なくとも一つのドナー材料および少なくとも一つのアクセプタ材料を含む、請求項1に記載のデバイス。
- 前記少なくとも一つのアクセプタは、最低空軌道エネルギー(LUMO−1)を有し、前記少なくとも一つの電子伝導性励起子遮蔽層は、最低空軌道エネルギー(LUMO−2)を有し、
LUMO−1およびLUMO−2は、前記アクセプタ材料から前記カソード材料に直接電子輸送できるように位置している、請求項2に記載のデバイス。 - 第一最低空軌道エネルギーと第二最低空軌道エネルギー間のエネルギーギャップは、0.3eV以下である、請求項3に記載のデバイス。
- 前記少なくとも一つのドナー材料は、スクアライン(SQ)、ホウ素サブフタロシアニン塩化物(SubPc)、銅フタロシアニン(CuPc)、アルミニウムフタロシアニン塩化物(ClAlPc)、ポリ(3−ヘキシルチオフェン)(P3HT)、スズフタロシアニン(SnPc)、ペンタセン、テトラセン、ジインデノペリレン(DIP)、およびこれらの組合せを含む、請求項2に記載のデバイス。
- 前記少なくとも一つのアクセプタ材料は、C60、C70フラーレン、3,4,9,10−ペリレンテトラカルボン酸二無水物(PTCDA)、パーフルオロ銅フタロシアニン(F16−CuPc)、PCBM、PC70BM、およびこれらの組合せである、請求項2に記載のデバイス。
- 前記少なくとも一つの電子伝導性材料は、3,4,9,10−ペリレンテトラカルボン酸ビスベンジミダゾール(PTCBI)を含む、請求項1に記載のデバイス。
- 前記遮蔽領域は、少なくとも一つのワイドギャップ電子伝導励起子遮蔽材料をさらに含む、請求項1に記載のデバイス。
- 前記少なくとも一つのワイドギャップ電子伝導励起子遮蔽材料は、1,4,5,8−ナフタレン−テトラカルボン酸無水物(NTCDA)を含む、請求項8に記載のデバイス。
- 前記遮蔽領域の厚さは、10〜100nmの範囲である、請求項1に記載のデバイス。
- 前記少なくとも一つの電子伝導性材料の厚さは、2〜10nmの範囲である、請求項1に記載のデバイス。
- 前記少なくとも一つのワイドギャップ電子伝導励起子遮蔽材料の厚さは、5〜100nmの範囲である、請求項8に記載のデバイス。
- 前記遮蔽領域は、3,4,9,10−ペリレンテトラカルボン酸ビスベンズイミダゾール(PTCBI)を含む電子伝導性材料、および、1,4,5,8−ナフタレンテトラカルボン酸二無水物(NTCDA)を含むワイドギャップ電子伝導励起子遮蔽材料を含む、請求項1に記載のデバイス。
- NTCDAの厚さの範囲は、5〜100nmの範囲であり、PTCBIが5nm以下の厚さを有する、請求項13に記載のデバイス。
- 有機光検出器である、請求項1に記載のデバイス。
- 前記有機光検出器は、次の特性;
0.62より大きい曲線因子、
1sun、AM1.5G照明において、少なくとも5.0%のスペクトル修正された電力変換効率
少なくとも7.5mA/cm2の短絡電流
のうち少なくとも一つを有する有機太陽電池である、請求項15に記載のデバイス。 - 少なくとも一つの電極は、透明導電性酸化物、薄い金属層、または透明導電性ポリマーを含む、請求項1に記載のデバイス。
- 前記導電性酸化物は、酸化インジウムスズ(ITO)、酸化スズ(TO)、酸化ガリウムインジウムスズ(GITO)、酸化亜鉛(ZO)、酸化亜鉛インジウムスズ(ZITO)から選ばれ、
薄い金属層は、Ag,Al,Au、またはこれらの組合せを含み、
透明導電性ポリマーは、ポリアニリン(PANI)および3,4−ポリエチレンジオキシチオフェン:ポリスチレンスルフォネート(PEDOT:PSS)を含む、請求項17に記載のデバイス。 - 少なくとも一つの電極は、金属代替材料、非金属材料、またはAg,Au,Ti,Sn、およびAlから選択される金属材料を含む、請求項1に記載のデバイス。
- 基板に:
重なり合ったアノードおよびカソードのうち少なくとも一つの電極と、
前記二つの電極間の光活性領域と、
電子を伝導し、励起子を遮蔽する遮蔽領域と、
を設けることを含み、
前記遮蔽領域は、光活性領域とカソードとの間に位置する少なくとも一つの有機材料を含み、前記有機遮蔽領域は少なくとも一つの電子伝導性材料を含む、有機感光光電子デバイスの製造方法。 - 前記光活性領域は、少なくとも一つのドナー材料および少なくとも一つのアクセプタ材料を含む、請求項20に記載の方法。
- 前記少なくとも一つのドナー材料は、スクアライン(SQ)、ホウ素サブフタロシアニン塩化物(SubPc)、銅フタロシアニン(CuPc)、アルミニウムフタロシアニン塩化物(ClAlPc)、ポリ(3−ヘキシルチオフェン)(P3HT)、スズフタロシアニン(SnPc)、ペンタセン、テトラセン、ジインデノペリレン(DIP)、およびこれらの組合せを含む、請求項21に記載の方法。
- 前記少なくとも一つのアクセプタ材料は、C60、C70フラーレン、3,4,9,10−ペリレンテトラカルボン酸二水和物(PTCDA)、パーフルオロ銅フタロシアニン(F16−CuPc)、PCBM、PC70BM、およびこれらの組合せから選択される、請求項21に記載の方法。
- 前記少なくとも一つのアクセプタは、最低空軌道エネルギー(LUMO−1)を有し、前記電子伝導性材料は最低空軌道エネルギー(LUMO−2)を有し、
LUMO−1およびLUMO−2は、前記アクセプタ材料から前記カソード材料に直接電子輸送できるように位置している、請求項20に記載の方法。 - 第一最低空軌道エネルギーと第二最低空軌道エネルギーとの間のエネルギーギャップが0.3eV以下である、請求項24に記載の方法。
- 前記遮蔽領域は、少なくとも一つのワイドギャップ電子伝導性励起子遮蔽材料をさらに含む、請求項20に記載の方法。
- 前記少なくとも一つのワイドギャップ電子伝導性励起子遮蔽材料は、1,4,5,8−ナフタレン−テトラカルボン酸二無水和物(NTCDA)を含む、請求項26に記載の方法。
- 前記遮蔽領域の厚さは、10〜100nmの範囲である、請求項20に記載の方法。
- 前記少なくとも一つの電子伝導性材料の厚さは、2〜10nmの範囲である、請求項20に記載の方法。
- 前記少なくとも一つのワイドギャップ電子伝導励起子遮蔽材料の厚さは、5〜100nmの範囲である、請求項26に記載の方法。
- 前記遮蔽領域は、3,4,9,10−ペリレンテトラカルボン酸ビスベンジミダゾール(PTCBI)を含む電子伝導性材料および1,4,5,8−ナフタレン−テトラカルボン酸無水物(NTCDA)を含むワイドギャップ電子伝導励起子遮蔽材料を含む、請求項20に記載の方法。
- NTCDAの厚さの範囲は、5〜100nmであり、PTCBIの厚さは5nm以下である、請求項31に記載の方法。
- 導電性酸化物は、酸化インジウムスズ(ITO)、酸化スズ(TO)、酸化ガリウムインジウムスズ(GITO)、酸化亜鉛(ZO)、および酸化亜鉛インジウムスズ(ZITO)から選択され、薄い金属層はAg,Al,Auまたはこれらの組合せであり、透明伝導性ポリマーはポリアニリン(PANI)、および3,4−ポリエチレンジオキキチオフェン:ポリスチレンスルホネート(PEDOT:PSS)を含む、請求項32に記載の方法。
- 少なくとも一つの電極は、金属代替物、非金属材料、またはAg,Au,Ti,SnおよびAlから選択される金属材料を含む、請求項33に記載の方法。
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Also Published As
Publication number | Publication date |
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KR20200018718A (ko) | 2020-02-19 |
CN103650187B (zh) | 2016-11-02 |
EP3751629B1 (en) | 2024-05-01 |
AU2016203695A1 (en) | 2016-06-23 |
EP3751629A1 (en) | 2020-12-16 |
AU2012259419A1 (en) | 2013-08-22 |
KR20140016284A (ko) | 2014-02-07 |
EP2678890A1 (en) | 2014-01-01 |
TW201248871A (en) | 2012-12-01 |
US20120235125A1 (en) | 2012-09-20 |
US8816332B2 (en) | 2014-08-26 |
WO2012161773A1 (en) | 2012-11-29 |
TWI553887B (zh) | 2016-10-11 |
JP6141774B2 (ja) | 2017-06-07 |
CA2827632A1 (en) | 2012-11-29 |
CN103650187A (zh) | 2014-03-19 |
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