JP2020017737A - 透明な光電池 - Google Patents
透明な光電池 Download PDFInfo
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- 239000011149 active material Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000001228 spectrum Methods 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- LBGCRGLFTKVXDZ-UHFFFAOYSA-M ac1mc2aw Chemical compound [Al+3].[Cl-].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 LBGCRGLFTKVXDZ-UHFFFAOYSA-M 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 15
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- 239000011521 glass Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 5
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical compound N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 claims description 4
- 150000004032 porphyrins Chemical class 0.000 claims description 4
- 239000005328 architectural glass Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000002071 nanotube Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000001816 cooling Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 68
- 230000005540 biological transmission Effects 0.000 description 26
- 230000006870 function Effects 0.000 description 22
- 239000000370 acceptor Substances 0.000 description 20
- 238000013086 organic photovoltaic Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 238000001429 visible spectrum Methods 0.000 description 8
- 238000004088 simulation Methods 0.000 description 7
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
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- 239000004065 semiconductor Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 241000220317 Rosa Species 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
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- 238000010168 coupling process Methods 0.000 description 2
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- 239000012530 fluid Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 1
- 229910015711 MoOx Inorganic materials 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
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- 238000005265 energy consumption Methods 0.000 description 1
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- 229920005570 flexible polymer Polymers 0.000 description 1
- -1 for example Chemical class 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 238000002061 vacuum sublimation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
Description
本出願は、2011年1月26日付けで出願された先願の米国仮特許出願第61/436,671号明細書の優先権を主張するものであり、この出願の内容は、引用により、そのすべてが本明細書に包含される。
i)dDonor、dAcceptor(合計)について最適化する。
ii)dDonor、dAcceptor(合計)を固定する。
iii)dmixedを変化させる。
iv)dDonor=dDonor(合計)−(dmixed/2)
v)dAcceptor=dAcceptor(合計)−(dmixed/2)
vi)比率(dDonor:dAcceptor)について最適化する。
Claims (25)
- 光電池において、
透明な基板と、
前記基板の上部に位置する第1活性材料であって、約650ナノメートルを上回る波長において吸収ピークを有する第1活性材料と、
前記基板の上部に位置する第2活性材料であって、可視光スペクトルの外側の波長において吸収ピークを有する第2活性材料と、
透明なカソードと、
透明なアノードと、
を有することを特徴とする光電池。 - 請求項1に記載の光電池において、前記カソード及び前記アノードのうちの少なくとも1つは、前記第1活性材料内における吸収を極大化するように構成されていることを特徴とする光電池。
- 請求項1に記載の光電池において、前記カソード及び前記アノードのうちの少なくとも1つは、前記第2活性材料内における吸収を極大化するように構成されていることを特徴とする光電池。
- 請求項1に記載の光電池において、前記第1活性材料及び前記第2活性材料は、別個の層内に配置されることを特徴とする光電池。
- 請求項1に記載の光電池において、前記第1活性材料は、約450ナノメートル未満の波長において第2吸収ピークを有することを特徴とする光電池。
- 請求項1に記載の光電池において、前記第1活性材料は、ドナーであり、且つ、前記第2活性材料は、アクセプタであることを特徴とする光電池。
- 請求項1に記載の光電池において、近赤外波長において反射する可視波長において透明なミラーを更に有することを特徴とする光電池。
- 請求項1に記載の光電池において、前記第1活性材料は、有機材料を有することを特徴とする光電池。
- 請求項1に記載の光電池において、前記第1活性材料は、フタロシアニン、ポルフィリン、又はナフタロシアニン色素のうちの少なくとも1つを有することを特徴とする光電池。
- 請求項1に記載の光電池において、前記第1活性材料は、クロロアルミニウムフタロシアニンを有することを特徴とする光電池。
- 請求項1に記載の光電池において、前記第1活性層は、すずフタロシアニンを有することを特徴とする光電池。
- 請求項1に記載の光電池において、前記第2活性層は、カーボン60(C60)又はナノチューブのうちの少なくとも1つを有することを特徴とする光電池。
- 請求項1に記載の光電池において、前記第1及び第2活性材料は、柔軟なカプセル化層と共に使用するように構成されていることを特徴とする光電池。
- 請求項1に記載の光電池において、前記光電池は、表示画面、腕時計の透明カバー、自動車ガラス、又は建築ガラスのうちの1つに内蔵されることを特徴とする光電池。
- 複数の電気的に相互接続された請求項1に記載の光起電装置を有することを特徴とする光起電アレイ。
- 請求項1に記載の光電池において、前記透明基板は、曲がりやすいことを特徴とする光電池。
- 光電池において、
透明な基板と、
前記基板の上部に位置する第1活性材料であって、約650ナノメートルを上回る波長において吸収ピークを有する第1活性材料と、
前記基板の上部に位置する第2活性材料であって、約650ナノメートルを上回る又は約450ナノメートルを下回る波長において吸収ピークを有する第2活性材料と、
透明なカソードと、
透明なアノードと、
を有することを特徴とする光電池。 - 光電池において、
第1及び第2サブセルの間に配設された再結合ゾーンであって、前記第1及び第2サブセルのそれぞれは、可視光スペクトルの外側の波長において吸収ピークを有する、再結合ゾーンと、
透明なカソードと、
透明なアノードと、
を有することを特徴とする光電池。 - 請求項18に記載の光電池において、前記光電池は、透明又は半透明であることを特徴とする光電池。
- 光電池を製造する方法において、
基板上に第1電極材料を製造するステップであって、前記電極材料及び前記基板は、可視光に対して透明である、ステップと、
約650ナノメートルを上回る波長において吸収ピークを有する第1活性材料と、約450ナノメートルを下回る波長において吸収ピークを有する第2活性材料と、を有する少なくとも1つの層を製造するステップと、
可視光に透明である第2電極材料を製造するステップと、
を有することを特徴とする方法。 - 請求項20に記載の方法において、前記赤外吸収活性層内における近赤外光の吸収が極大化されるように、前記第1又は第2電極のうちの少なくとも1つの電極の厚さを選択するステップを更に有することを特徴とする方法。
- 請求項20に記載の方法において、近赤外光用の多層ミラーを製造するステップを更に有することを特徴とする方法。
- 光電池を製造する方法において、
第1及び第2サブセルを製造するステップであって、前記第1及び第2サブセルのそれぞれは、可視光スペクトルの外側の波長において吸収ピークを有する、ステップと、 前記第1及び第2サブセルの間に配設された再結合ゾーンを製造するステップと、
透明なカソード及び透明なアノードを製造するステップと、
を有することを特徴とする方法。 - 請求項23に記載の方法において、前記光電池は、透明又は半透明であることを特徴とする方法。
- 電気を生成する方法において、
光電池を提供するステップであって、
前記光電池は、
透明な基板と、
前記基板の上部に位置した第1活性材料であって、約650ナノメートルを上回る波長において吸収ピークを有する第1活性材料と、
前記基板の上部に位置する第2活性材料であって、可視光スペクトルの外側の波長において吸収ピークを有する第2活性材料と、
透明なカソードと、
透明なアノードと、
を有する、ステップと、
前記光電池を光源に露出させるステップと、
を有することを特徴とする方法。
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JP2019150143A Active JP7101150B2 (ja) | 2011-01-26 | 2019-08-20 | 透明な光電池 |
JP2022107802A Pending JP2022153401A (ja) | 2011-01-26 | 2022-07-04 | 透明な光電池 |
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Country Status (14)
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US (4) | US9728735B2 (ja) |
EP (2) | EP4007003A1 (ja) |
JP (4) | JP2014505370A (ja) |
KR (5) | KR102391529B1 (ja) |
CN (2) | CN109244247B (ja) |
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