WO1999031195A1 - Abrasif, procede de polissage de tranche, et procede de production d'un dispositif a semi-conducteur - Google Patents
Abrasif, procede de polissage de tranche, et procede de production d'un dispositif a semi-conducteur Download PDFInfo
- Publication number
- WO1999031195A1 WO1999031195A1 PCT/JP1998/005736 JP9805736W WO9931195A1 WO 1999031195 A1 WO1999031195 A1 WO 1999031195A1 JP 9805736 W JP9805736 W JP 9805736W WO 9931195 A1 WO9931195 A1 WO 9931195A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cerium oxide
- abrasive
- polishing
- oxide particles
- particles
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000007517 polishing process Methods 0.000 title abstract 2
- 239000002245 particle Substances 0.000 claims abstract description 232
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 149
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 149
- 239000002002 slurry Substances 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000011148 porous material Substances 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 239000006061 abrasive grain Substances 0.000 claims abstract description 5
- 238000005498 polishing Methods 0.000 claims description 126
- 239000013078 crystal Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 51
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 239000002270 dispersing agent Substances 0.000 claims description 10
- 238000007561 laser diffraction method Methods 0.000 claims description 9
- 238000004062 sedimentation Methods 0.000 claims description 9
- 229920002125 Sokalan® Polymers 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229920000620 organic polymer Polymers 0.000 claims description 4
- 239000004584 polyacrylic acid Substances 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 3
- 239000002736 nonionic surfactant Substances 0.000 claims description 3
- 239000003945 anionic surfactant Substances 0.000 claims description 2
- 238000004458 analytical method Methods 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 37
- 239000003795 chemical substances by application Substances 0.000 description 23
- 239000003082 abrasive agent Substances 0.000 description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 238000002360 preparation method Methods 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000009826 distribution Methods 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000011802 pulverized particle Substances 0.000 description 8
- 238000010298 pulverizing process Methods 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 7
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 150000003863 ammonium salts Chemical class 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- KHSBAWXKALEJFR-UHFFFAOYSA-H cerium(3+);tricarbonate;hydrate Chemical compound O.[Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O KHSBAWXKALEJFR-UHFFFAOYSA-H 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000003991 Rietveld refinement Methods 0.000 description 3
- WPKYZIPODULRBM-UHFFFAOYSA-N azane;prop-2-enoic acid Chemical compound N.OC(=O)C=C WPKYZIPODULRBM-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- -1 polyoxyethylene lauryl ether sulfate Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001785 cerium compounds Chemical class 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- RFVNOJDQRGSOEL-UHFFFAOYSA-N 2-hydroxyethyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCO RFVNOJDQRGSOEL-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 241000403354 Microplus Species 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 240000008881 Oenanthe javanica Species 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- 229940063953 ammonium lauryl sulfate Drugs 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical compound [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical group Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Definitions
- the present invention relates to an abrasive, a method for polishing a substrate, and a method for manufacturing a semiconductor device.
- Colloidal silica-based polishing agents are generally studied as polishing agents.
- Colloidal silica-based abrasives are produced by growing silica particles by a method such as thermal decomposition of tetrachlorosilicic acid and adjusting the pH with an alkaline solution containing no alkali metal such as ammonia.
- a polishing agent does not have a sufficient polishing rate for the inorganic insulating film, and there is a technical problem of a low polishing rate for practical use.
- cerium oxide abrasives are used for polishing the glass surface for photomasks.
- Cerium oxide particles have a lower hardness than silica particles and alumina particles, and are therefore less likely to scratch the polished surface, and thus are useful for finishing mirror polishing.
- cell oxide has a chemically active property, known as a strong oxidizing agent. Have. Taking advantage of this advantage, it is useful to apply it to chemical mechanical polishing agents for insulating films.
- the cerium oxide abrasive for polishing a glass surface for a photomask is directly applied to the polishing of an inorganic insulating film, the primary particle diameter is large, so that a polishing scratch that can be visually observed is formed on the insulating film surface.
- the present invention provides a polishing agent, a substrate polishing method, and a semiconductor device manufacturing method capable of polishing a surface to be polished such as a Si ⁇ 2 insulating film at a high speed without any damage.
- an abrasive comprising a slurry in which cerium oxide particles having two or more crystallites and having crystal grain boundaries are dispersed in a medium.
- the median value of the cerium oxide particle diameter having crystal grain boundaries is preferably 60 to 150 O nm, more preferably 100 to 120 O nm, and most preferably 300 to 100 nm. .
- the median crystallite diameter is preferably 5 to 250 nm, more preferably 5 to 15 O nm.
- Particles having a median cerium oxide particle diameter having crystal grain boundaries of 300 to 100 nm and a median crystallite diameter of 100 to 50 nm are preferably used.
- Particles having a median diameter of cerium oxide having crystal grain boundaries of 300 to 100 nm and a median diameter of crystallite of 50 to 200 nm are preferably used. You.
- the maximum diameter of the cerium oxide particles having a crystal grain boundary is preferably 300 nm or less, and the maximum diameter of the crystallite is preferably 60 O nm or less. No. Those having a crystallite diameter of 10 to 600 nm are preferred.
- an abrasive containing a slurry in which abrasive particles having pores are dispersed in a medium is provided.
- Cerium oxide particles are preferably used as abrasive grains.
- the porosity of the porosity is preferably 10 to 30% as determined from the ratio of the density measured using a pycnometer to the theoretical density determined by X-ray Rietveld analysis. Further, pores having a pore volume of from 0.02 to 0.05 cm 3 g as measured by the BJH (Barret, Joyner, Halende) method are preferred.
- the slurry may contain a dispersant, and the dispersant may be at least one selected from a water-soluble organic polymer, a water-soluble anionic surfactant, a water-soluble nonionic surfactant, and a water-soluble amine. It is preferably a seed, and ammonium polyacrylate is preferably used.
- the cerium oxide particles including cerium oxide particles composed of two or more crystallites and having a crystal grain boundary and having a particle diameter of lm or more are 0.1% by weight of the total amount of cerium oxide particles.
- cerium oxide particles composed of two or more crystallites and having a crystal grain boundary are included, and the crystal grain boundary is provided.
- a polishing agent is provided in which cerium oxide particles polish a predetermined substrate while generating a new surface that does not come into contact with a medium during polishing.
- an abrasive comprising cerium oxide particles having two or more crystallites and having crystal grain boundaries
- the diameter of the D99 volume% cerium oxide particle measured by laser diffraction method was measured by laser diffraction method.
- % Of the cerium oxide particle diameter is 0.4 or more and 0.9 or less, and an abrasive
- the substrate polishing method of the present invention is a method for polishing a predetermined substrate using the above-mentioned abrasive, and it is preferable that the strength of the predetermined substrate is larger than the grain boundary breaking strength of the cerium oxide particles.
- the predetermined substrate can be a semiconductor chip on which a silica film is formed.
- the method for manufacturing a semiconductor device according to the present invention comprises a semiconductor device having a silica film formed thereon. Polishing the body chip with the abrasive.
- cerium oxide is obtained by calcining a cerium compound such as a carbonate, a sulfate, and an oxalate.
- TEOS Tetraethoxysilane
- the content of alkali metals and halogens be suppressed to 1 ppm or less.
- the abrasive of the present invention is of high purity, and Na, K, Si, Mg, Ca, Zr, Ti, Ni, Cr and Fe are each lppm or less, and A1 is 10 or less. It is less than ppm.
- a baking method can be used as a method for preparing cerium oxide particles.
- low-temperature baking that does not increase crystallinity as much as possible is preferable.
- the oxidation temperature of the cerium compound is 300 ° C.
- the firing temperature is preferably from 400 ° C. to 900 ° C.
- Cerium carbonate is preferably fired in an oxidizing atmosphere such as oxygen gas for 40 to 900 ° (hereinafter, 5 to 300 minutes).
- the calcined cerium oxide is pulverized by dry pulverization such as a jet mill or a pole mill or wet pulverization such as a bead mill or a pole mill. Can be.
- the cerium oxide particles obtained by pulverizing the calcined cerium oxide include single crystal particles having a small crystallite size and pulverized particles not pulverized to the crystallite size. And is composed of two or more crystallites and has crystal grain boundaries. Doing polishing with an abrasive comprising pulverized particles having a crystal grain boundary, is destroyed by stress at the time of polishing is estimated to generate an active surface, at high speed without flaws polished surface, such as S i O 2 insulating film It is considered that this contributes to polishing.
- the cerium oxide slurry in the present invention is obtained by dispersing an aqueous solution containing cerium oxide particles produced by the above method or a composition comprising cerium oxide particles recovered from this aqueous solution, water and, if necessary, a dispersant. Obtained by: If necessary, the cerium oxide particles can be classified using a filter or the like.
- the concentration of the cerium oxide particles is not limited, but is preferably in the range of 0.5 to 10% by weight from the viewpoint of easy handling of the suspension (abrasive).
- Examples of the dispersing agent that do not contain metal ions include water-soluble organic polymers such as acrylic acid-based polymers and polyvinyl alcohol, and water-soluble organic polymers such as ammonium lauryl sulfate and ammonium polyoxyethylene lauryl ether sulfate.
- Water-soluble nonionic surfactants such as ionic surfactants, polyoxyethylene lauryl ether and polyethylene glycol monostearate, and water-soluble amines such as monoethanolamine and diethanolamine And the like.
- the acrylic acid polymer includes, for example, acrylic acid polymer and its ammonium salt, methacrylic acid polymer and its ammonium salt, and acrylic acid polymer.
- a copolymer of an ammonium salt with an alkyl acrylate (methyl, ethyl or propyl) is exemplified.
- polyacrylic acid ammonium salt or a copolymer of acrylic acid ammonium salt and methyl acrylate is preferable.
- the molar ratio of ammonium acrylate to methyl acrylate is such that ammonium acrylate and methyl acrylate are in the range of 100 to 90/90. Is preferred.
- the weight average molecular weight of the acrylic acid-based polymer is preferably from 1,000 to 2,000. If the weight average molecular weight exceeds 20000, the particle size distribution tends to change with time due to reagglomeration. If the weight average molecular weight is less than 1000, the dispersibility and the effect of preventing sedimentation may not be sufficient.
- the addition amount of these dispersants is preferably in the range of 0.01 to 5 parts by weight with respect to 100 parts by weight of cerium oxide particles, from the viewpoint of the dispersibility of the particles in the slurry and the anti-settling property.
- a homogenizer, an ultrasonic disperser, a pole mill, or the like can be used in addition to the dispersion treatment using a normal stirrer.
- a wet disperser such as a ball mill, a vibrating pole mill, a planetary pole mill, and a medium stirring mill. If you want to increase the alkalinity of the slurry, you can add ammonia water or the like during or after the dispersion treatment. Alkaline substances not containing metal ions can be added.
- the cerium oxide abrasive of the present invention the above slurry may be used as it is, but N, N-getylethanolamine, N, N-dimethylethanolamine, aminoethylethanolamine, anionic Additives such as a surfactant, polyvinyl alcohol, or the above-described dispersant may be appropriately added according to the usage form to form an abrasive.
- the median diameter of cerium oxide particles having crystal grain boundaries dispersed in the slurry of the present invention is preferably 60 to 150 nm, and the median crystallite diameter is preferably 1 to 250 nm.
- the median of the cerium oxide particle diameter having crystal grain boundaries 6 0 nm less than, or median crystallite size is less than lnm, polishing the surface to be polished, such as S i ⁇ 2 insulating film at high speed
- polishing the surface to be polished such as S i ⁇ 2 insulating film at high speed
- the maximum value of the oxide Seri um particle diameter having crystal grain boundaries is more than 3 0 0 0 nm, scratches tend to occur on the polished surface, such as S i ⁇ second insulating film.
- Cerium oxide particles having crystal grain boundaries is preferably 5-1 0 0 vol% of the total cerium oxide particles, in the case of less than 5% by volume scratches generated on the polished surface, such as S i ⁇ second insulating film Easier to do.
- the maximum diameter of the crystallite is preferably 600 nm or less, and the crystallite diameter is preferably 10 to 600 nm. If the crystallite exceeds 60 nm, scratches tend to occur, and if it is less than 10 nm, the polishing rate tends to decrease.
- cerium oxide particles having a crystallite diameter and a crystal grain boundary The diameter is measured by observation with a scanning electron microscope (eg, S-900, manufactured by Hitachi, Ltd.).
- the particle diameter of the particle is determined from the major axis and the minor axis of the particle. That is, the major axis and minor axis of the particle are measured, and the square root of the product of the major axis and minor axis is defined as the particle diameter.
- the volume of the sphere obtained from the particle diameter determined in this way is defined as the volume of the particle.
- the median value is the median value of the volume particle size distribution, and means the particle size when the volume ratio of the particles is integrated from the finer particle size and reaches 50%. That is, when particles having a volume ratio of V i% exist in the range of the particle diameter of a certain section ⁇ , and if the average particle diameter of the section ⁇ is di, it is assumed that particles of the particle diameter di exist by V i% by volume. .
- the porosity of the cerium oxide particles having pores dispersed in the slurry of the present invention is preferably 10 to 30%.
- the porosity was calculated from the ratio of the density measured with a pycnometer (pure water, 20 ° C) to the theoretical density obtained by X-ray Rietveld analysis.
- the pore volume of the porous oxide particles is preferably from 0.02 to 0.05 cm 3 / g.
- the porosity is more than 3 0%, or if the pore volume exceeds 0. 0 5 cm 3 / g, but does not enter scratches the polished surface, such as S i ⁇ second insulating film, the polishing rate Tends to be slow.
- the present invention provides a slurry in which cerium oxide particles having a bulk density of 6.5 gZcm 3 or less are dispersed.
- the bulk density of cerium oxide exceeds 6.5 gZ cm 3 , scratches occur on the polished surface of the SiO 2 insulating film.
- the bulk density of cerium oxide is preferably from 5.0 to 5.9 gZ cm 3. If it is less than the lower limit, the polishing rate is reduced, and if it exceeds the upper limit, scratches are likely to occur.
- the bulk density used in the present specification is the density of the powder measured with a pycnometer. At the time of measurement, pure water was used as the liquid to be injected into the pycnometer, and the measurement was performed at 20 ° C.
- the aspect ratio of the primary particles constituting the cerium oxide particles dispersed in the slurry of the present invention is preferably 1 to 2, with a median of 1.3.
- the aspect ratio is measured by observation using a scanning electron microscope (eg, S-900, manufactured by Hitachi, Ltd.).
- the pH of the slurry of the present invention is preferably 7 or more and 10 or less, more preferably 8 or more and 9 or less.
- the slurry After adjusting the pH, the slurry is placed in a container such as polyethylene and left at 5 to 55 ° C for 7 days or more, more preferably 30 days or more, before using it. Less.
- the slurry of the present invention is excellent in dispersibility, has a low sedimentation velocity, and has a concentration change rate of less than 10% for 2 hours at any height in a cylindrical container having a diameter of 10 cm and a height of 1 m.
- the present invention includes cerium oxide particles composed of two or more crystallites and having crystal grain boundaries, wherein the cerium oxide particles having a particle size of 1 m or more account for 0.1% by weight or more of the total amount of the cerium oxide particles.
- the cerium oxide particles having a crystal grain boundary are provided with an abrasive which is crushed and polished when a predetermined substrate is polished.
- Particle size 1 The content of cerium oxide particles of m or more is preferably from 0.1 to 50% by weight, and more preferably from 0.1 to 30% by weight.
- cerium oxide particles with a particle diameter of 1 m or more is measured by measuring the transmitted light intensity blocked by the particles using a submerged particle counter.
- Model 770 AccuSizer (trade name) manufactured by System, Inc. can be used.
- an abrasive which is polished while polishing a predetermined substrate while cerium oxide particles having crystal grain boundaries form a new surface not in contact with a medium.
- the ratio of the content of cerium oxide particles of 0.5 zm or more after polishing to the content before polishing is 0.0001 or more, which is measured by centrifugal sedimentation after polishing the substrate.
- the centrifugal sedimentation method measures the content of cerium oxide particles based on the intensity of transmitted light of particles settled by centrifugal force.
- Shimadzu S A—C P 4 L (trade name) can be used.
- the ratio of the diameter of the cerium oxide particles of D99% by volume after polishing to the diameter of the cerium oxide particles of D99% before polishing is measured by a laser diffraction method after polishing the substrate.
- An abrasive is provided in the range of 0.4 to 0.9.
- the polishing slurry of the present invention after polishing a predetermined substrate, the diameter of the cerium oxide particle of 90% by volume after polishing and the 90% by weight of D90% before polishing measured by a laser diffraction method.
- the ratio to the cerium oxide particle size is 0.7 or more and 0.95 or less.
- the term “after polishing a predetermined substrate” means that the predetermined substrate is set on a holder to which a suction pad for mounting a substrate for holding the substrate to be polished is attached, and that the polishing is performed using a porous urethane resin.
- the measurement by the laser diffraction method can be performed by, for example, a Master Sizer microplus manufactured by Malvern Instruments Co., Ltd., refractive index: 1.9285, light source: He_Ne laser, absorption 0).
- D 99% and D 90% are calculated by integrating the volume ratio of the particles from the finer ones in the volume particle size distribution, and when they become 99% and 90%, respectively.
- Mean particle size is calculated by integrating the volume ratio of the particles from the finer ones in the volume particle size distribution, and when they become 99% and 90%, respectively.
- the inorganic insulating film in which the cerium oxide abrasive of the present invention is used is a SiO 2 film formed by a CVD method using SiH 4 or tetratraethoxysilane as an Si source and oxygen or ozone as an oxygen source.
- a substrate having a SiO 2 insulating film layer formed on a semiconductor substrate such as a semiconductor substrate in which circuit elements and aluminum wiring are formed, a semiconductor substrate in which circuit elements are formed, and the like are used. it can. Further, a substrate containing a SiO 2 insulating film formed for the purpose of semiconductor isolation (single opening / trench isolation) can also be used.
- the SiO 2 insulating film layer formed on such a semiconductor substrate is polished with the above-mentioned polishing agent to eliminate irregularities on the surface of the SiO 2 insulating film layer. And a smooth surface over the entire surface of the semiconductor substrate.
- the polishing device has a holder that holds the semiconductor substrate and a surface plate on which a polishing cloth (pad) is attached (a motor that can change the rotation speed is attached).
- a general polishing apparatus can be used.
- the polishing cloth general non-woven fabric, foamed polyurethane, porous fluororesin and the like can be used, and there is no particular limitation.
- the polishing cloth is subjected to groove processing for storing slurry.
- the polishing conditions are not limited, but the rotation speed of the surface plate is preferably as low as 100 rpm or less so that the semiconductor does not jump out.
- the pressure applied to the semiconductor substrate is 1 kg so that scratches do not occur after polishing. Z cm 2 or less is preferred.
- the slurry is continuously supplied to the polishing cloth with a pump or the like.
- the supply amount is not limited, but it is preferable that the surface of the polishing pad is always covered with the slurry.
- the semiconductor substrate is preferably washed well in running water, and then dried using a spin dryer or the like to remove water droplets adhering to the semiconductor substrate.
- the S i 0 2 insulating film layer which is flattened, forming an aluminum wiring of the second layer, again by the above method on the inter-wiring and the wiring, forming a S i O 2 insulating film
- polishing is performed using the cerium oxide abrasive to eliminate irregularities on the surface of the insulating film and to provide a smooth surface over the entire surface of the semiconductor substrate. By repeating this process a predetermined number of times, a desired number of semiconductor layers is manufactured.
- Cerium oxide abrasive of the present invention not only S i ⁇ 2 insulating film formed on a semiconductor substrate, S i ⁇ 2 insulating film formed on the wiring board having a predetermined wiring, glass, nitride Kei arsenide Optical glass such as inorganic insulating film, photomask, lens, prism, etc. Oxide), optical integrated circuits composed of glass and crystalline materials, optical switching elements, optical waveguides, optical fiber end faces, optical single crystals such as scintillation, and solid-state laser single crystals It is used for polishing LED sapphire substrates for lasers, semiconductor single crystals such as SiC, GaP, and GaAs, glass substrates for magnetic disks, and magnetic heads.
- the particle size of the obtained fired powder was 30 to 100 m.
- grain boundaries of cerium oxide were observed. Cerium oxide bounded by grain boundaries
- the median of the distribution was 190 nm, and the maximum was 500 nm.
- cerium oxide particles A The cerium oxide particles obtained by the grinding are hereinafter referred to as cerium oxide particles A.
- the resulting slurry was filtered through a 1-m filter, and deionized water was added to obtain an abrasive having a solid content of 3% by weight.
- the abrasive obtained from the cerium oxide particles A or B is hereinafter referred to as the abrasive A or B, respectively.
- the pHs of the obtained abrasives A and B were 8.3 and 8.3, respectively.
- each abrasive was diluted to an appropriate concentration and dried, and the polycrystalline particle diameter contained therein was measured.
- the median value was 825 nm and the maximum value was 1 230 nm.
- the median value was 7688 nm and the maximum value was 1200 nm.
- the overnight potentials of the abrasives A and B were examined.
- a cerium oxide slurry was placed in a measuring cell having platinum electrodes on both sides, and a voltage of 10 V was applied to both electrodes.
- a voltage is applied, the dispersed particles having a charge move to the electrode having the opposite polarity to the charge.
- the particle overnight potential was obtained.
- Cerium oxide particles A or B lkg, 23 g of polyacrylic acid ammonium salt aqueous solution (40% by weight), and 8977 g of deionized water are mixed, and ultrasonic waves are stirred for 10 minutes. Irradiation dispersed the cerium oxide particles to obtain a slurry.
- the obtained slurry was filtered with a 0.8 m filter, and deionized water was further added to obtain an abrasive having a solid content of 3% by weight.
- the polishing agent obtained from the cerium oxide particles A or B is hereinafter referred to as polishing agent A ′ or B ′, respectively.
- the pH values of the obtained abrasives A ′ and B ′ were 8.3 and 8.3, respectively.
- the abrasives A 'and B' were each diluted to an appropriate concentration and dried, and the particle size of the polycrystalline particles contained was measured.
- the abrasive A 'prepared using cerium oxide particles A the median was 450 nm and the maximum was 980 nm.
- the median value of the abrasive B ′ prepared using the cerium oxide particles B was 462 nm, and the maximum value was 10000 nm.
- the dispersibility of the particles in the abrasive and the charge of the dispersed particles were adjusted. Therefore, when the potentials of the abrasives A ′ and B ′ were examined in the same manner as in the case of the abrasives A and B described above, the dispersed particles of each of the abrasives were negatively charged. It was confirmed that the absolute values were large at 3 mV and _63 mV, and the dispersibility was good.
- the holder While holding the Si wafer, the holder is placed on a surface plate on which a polishing pad made of a porous urethane resin is adhered with the insulating film side down, and the processing load is reduced to 30%.
- a weight was placed so as to be 0 g Z cm 2 .
- the polishing agent A, B, A 'or B' solid content: 3% by weight prepared in this example was dropped on the surface plate at a rate of 50 ml / min.
- the insulating film on the surface of the Si wafer was polished.
- the wafer was removed from the holder, washed well with running water, and further washed for 20 minutes by an ultrasonic cleaner. After cleaning, the wafers were dried with a spin dryer and dried in a dryer at 120 for 10 minutes.
- the thickness change of the SiO 2 insulating film before and after polishing was measured on the dried wafer.
- the polishing agent A 60 O nm (polishing speed : 300 nm when polishing agent B is used, 58 O nm when polishing agent B is used (polishing speed: 29 OnmZ min), 59 O nm when polishing agent A 'is used (polishing speed) : 295 nm), and the abrasive film of 560 nm (polishing speed: 280 nm mZ) when abrasive B 'was used was shaved, and no matter which abrasive was used, The thickness must be uniform over the entire wafer. I understood. When the surface of the insulating film was observed using an optical microscope, no clear damage was found in any case.
- the ratio of the particle content (volume%) of 0.5 / im or more to the value before polishing was 0.385.
- the time required to rotate the surface plate during polishing was 1 hour, and 15 Si wafers were polished while being sequentially replaced.
- the abrasive after polishing was circulated and reused, and the total amount of the abrasive was set at 7500 ml.
- the particle size of the polishing agent A after polishing was measured by a laser scattering type particle size distribution meter, and the particle sizes at D99% and D90% were 0.491 and 0, respectively, with respect to the values before polishing. 804. From these values, it is considered that the polishing agent A has a property of polishing while collapsing and a property of polishing while generating a new surface not in contact with the medium.
- cerium oxide particles C The cerium oxide particles obtained by the pulverization are hereinafter referred to as cerium oxide particles C.
- cerium oxide particles D The cerium oxide particles obtained by the pulverization are hereinafter referred to as cerium oxide particles D.
- the particle size of the obtained fired powder was 30 to 100 zm.
- grain boundaries of cerium oxide were observed.
- the cerium oxide crystallite diameter surrounded by the grain boundaries was measured, the median of the distribution was 15 nm and the maximum was 60 nm.
- cerium oxide particles E The cerium oxide particles obtained by the pulverization are hereinafter referred to as cerium oxide particles E.
- cerium oxide particles F Large polycrystalline particles of 1 to 3 m and polycrystalline particles of 0.5 to 1 ⁇ m were mixed. The polycrystalline particles were not aggregates of single crystal particles.
- the cerium oxide particles obtained by the pulverization are hereinafter referred to as “cerium oxide particles F”.
- the obtained slurry was filtered through a 2 / m filter, and deionized water was added to obtain a 3% by weight solids abrasive.
- the abrasive obtained from the cerium oxide particles C, D, E or F is hereinafter referred to as abrasive C, D, E or F, respectively.
- the pH of the abrasives C, D, E or F was 8.0, 8.1, 8.4 and 8.4, respectively.
- each abrasive was diluted to an appropriate concentration and dried, and the diameter of the polycrystalline particles contained therein was measured.
- the median value was 882 nm, and the maximum value was 1264 nm.
- the median was 800 nm and the maximum was 144 nm.
- the median was 831 nm, The maximum value was 1500 nm.
- the median was 840 nm and the maximum was 148 nm.
- the overnight potential of the abrasives C, D, E or F was examined in the same manner as in Example 1. Particles were also negatively charged, and the absolute values were -64 mV, _35 mV, -38 mV, and -41 mV, respectively, and the dispersibility was confirmed to be good.
- the obtained slurry was filtered with a 0.8 m filter, and deionized water was further added to obtain an abrasive having a solid content of 3% by weight.
- the abrasive obtained from the cerium oxide particles C, D, E or F is hereinafter referred to as abrasive C ', D', E 'or F', respectively.
- the pH of abrasives C ', D', E 'or F' was 8.0, 8.1, 8.4 and 8.4, respectively.
- the abrasive C ', D', E 'or F' is diluted to an appropriate concentration and dried, and then the particles of the polycrystalline particles contained are diluted.
- the median value was 39.8 nm and the maximum value was 890 nm for the abrasive C ′ using the cerium oxide particles C.
- the median was 405 nm and the maximum was 920 nm.
- Abrasive E 'using cerium oxide particles E Had a median of 415 nm and a maximum of 990 nm.
- the abrasive F ′ using the cerium oxide particles F had a median value of 450 nm and a maximum value of 1080 nm.
- Example 2 the zeta potential of each abrasive was examined in the same manner as in Example 1 to examine the dispersibility of the particles in the abrasive and the charge of the dispersed particles. It was charged, and it was confirmed that the dispersibility was good with large absolute values of 58 mV, —55 mV, —44 mV, and —40 mV, respectively.
- Example 2 As in Example 1, except that the abrasives C, D, E, F, C ', D', E 'or F' prepared in this example were used as the abrasives, the surface of the Si wafer was The SiO 2 insulating film was polished, washed and dried, and the change in the film thickness of the SiO 2 insulating film was measured.
- polishing agent C When the polishing agent C was used, it was 7400 nm (polishing rate: 3700 nm / min), 730 nm when using abrasive D (polishing rate: 365 nm mZ min), 750 nm when using abrasive E (polishing rate: 375 nmZ) Min.), 72 O nm when using abrasive F (polishing speed: 360 nm mZ min.), 700 nm when using abrasive C '(polishing speed: 35 nm mZ min.) ), 69 O nm when using abrasive D '(polishing speed: 345 nm mZ min), 710 nm when using abrasive E'
- silica slurry without silica is dispersed pores as a polishing agent, in the same manner as in Example 1, 2, S i TEOS on wafer surface - line polishing of S i ⁇ 2 insulating film formed by a CVD method I got it.
- This slurry had a pH of 10.3 and contained 12.5% by weight of SiO 2 particles.
- the polishing conditions were the same as in Examples 1 and 2.
- a surface to be polished such as a SiO 2 insulating film can be polished at high speed without damage.
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- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Description
Claims
Priority Applications (17)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34924097A JPH11181403A (ja) | 1997-12-18 | 1997-12-18 | 酸化セリウム研磨剤及び基板の研磨法 |
CNB2006100585449A CN100567441C (zh) | 1997-12-18 | 1998-12-18 | 研磨剂、基片的研磨法和半导体装置的制造方法 |
EP98961410A EP1043379A4 (en) | 1997-12-18 | 1998-12-18 | ABRASIVE, WAFER POLISHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
KR1020057000457A KR100752909B1 (ko) | 1997-12-18 | 1998-12-18 | 연마제 |
KR1020057000456A KR100721481B1 (ko) | 1997-12-18 | 1998-12-18 | 연마제 |
KR1020037005273A KR100709661B1 (ko) | 1997-12-18 | 1998-12-18 | 연마제 |
CA002315057A CA2315057A1 (en) | 1997-12-18 | 1998-12-18 | Process for producing semiconductor device |
JP2000539103A JP3727241B2 (ja) | 1997-12-18 | 1998-12-18 | 研磨剤、基板の研磨法及び半導体装置の製造法 |
CN2008101830288A CN101423747B (zh) | 1997-12-18 | 1998-12-18 | 研磨剂、基片的研磨法和半导体装置的制造方法 |
AU16838/99A AU1683899A (en) | 1997-12-18 | 1998-12-18 | Abrasive, method of polishing wafer, and method of producing semiconductor device |
US09/581,814 US6343976B1 (en) | 1997-12-18 | 1998-12-18 | Abrasive, method of polishing wafer, and method of producing semiconductor device |
US10/042,271 US7115021B2 (en) | 1997-12-18 | 2002-01-11 | Abrasive, method of polishing target member and process for producing semiconductor device |
US11/484,611 US7871308B2 (en) | 1997-12-18 | 2006-07-12 | Abrasive, method of polishing target member and process for producing semiconductor device |
US11/878,504 US8162725B2 (en) | 1997-12-18 | 2007-07-25 | Abrasive, method of polishing target member and process for producing semiconductor device |
US12/170,587 US7963825B2 (en) | 1997-12-18 | 2008-07-10 | Abrasive, method of polishing target member and process for producing semiconductor device |
US13/217,447 US8137159B2 (en) | 1997-12-18 | 2011-08-25 | Abrasive, method of polishing target member and process for producing semiconductor device |
US13/411,196 US8616936B2 (en) | 1997-12-18 | 2012-03-02 | Abrasive, method of polishing target member and process for producing semiconductor device |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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JP9/349240 | 1997-12-18 | ||
JP34924097A JPH11181403A (ja) | 1997-12-18 | 1997-12-18 | 酸化セリウム研磨剤及び基板の研磨法 |
JP10/83043 | 1998-03-30 | ||
JP8304298 | 1998-03-30 | ||
JP10/83042 | 1998-03-30 | ||
JP8304398 | 1998-03-30 |
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US09581814 A-371-Of-International | 1998-12-18 | ||
US10/042,271 Continuation US7115021B2 (en) | 1997-12-18 | 2002-01-11 | Abrasive, method of polishing target member and process for producing semiconductor device |
Publications (1)
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WO1999031195A1 true WO1999031195A1 (fr) | 1999-06-24 |
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ID=27304106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP1998/005736 WO1999031195A1 (fr) | 1997-12-18 | 1998-12-18 | Abrasif, procede de polissage de tranche, et procede de production d'un dispositif a semi-conducteur |
Country Status (10)
Country | Link |
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US (7) | US6343976B1 (ja) |
EP (1) | EP1043379A4 (ja) |
JP (5) | JPH11181403A (ja) |
KR (10) | KR100752909B1 (ja) |
CN (4) | CN101423747B (ja) |
AU (1) | AU1683899A (ja) |
CA (2) | CA2315057A1 (ja) |
SG (1) | SG128425A1 (ja) |
TW (3) | TW200300025A (ja) |
WO (1) | WO1999031195A1 (ja) |
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