US7848118B2 - Bi-directional DC-DC converter and method for controlling the same - Google Patents

Bi-directional DC-DC converter and method for controlling the same Download PDF

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US7848118B2
US7848118B2 US12/193,244 US19324408A US7848118B2 US 7848118 B2 US7848118 B2 US 7848118B2 US 19324408 A US19324408 A US 19324408A US 7848118 B2 US7848118 B2 US 7848118B2
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switching element
switching
power source
lower arm
switching elements
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US20090059622A1 (en
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Takae Shimada
Yoshihide Takahashi
Kimiaki Taniguchi
Hiroyuki Shoji
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Hitachi Information and Telecommunication Engineering Ltd
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Hitachi Computer Peripherals Co Ltd
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/22Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H02M3/33576Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
    • H02M3/33584Bidirectional converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/32Means for protecting converters other than automatic disconnection
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0048Circuits or arrangements for reducing losses
    • H02M1/0054Transistor switching losses
    • H02M1/0058Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the invention relates to a bi-directional DC-DC converter having an insulating function and a method for controlling such a converter.
  • the hybrid automobile has a main battery for driving a motor and a battery for auxiliaries. If an electric power can be mutually supplied between the two batteries of different voltages, design flexibility of a vehicle power supply systems can be increased.
  • a bi-directional DC-DC converter for bi-directionally converting electric powers between two power sources of different voltages has been disclosed in JP-A-2002-165448.
  • a voltage type circuit on a high voltage side and a current type circuit on a low voltage side having a choke coil are connected through a transformer.
  • the electric power is supplied from the high voltage side power source to the low voltage side power source.
  • the electric power is supplied from the low voltage side power source to the high voltage side power source.
  • a bi-directional DC-DC converter in which a voltage clamping circuit including an object connection in series of a switching element and a capacitor is connected to a low voltage side circuit has been disclosed in JP-A-2006-187147.
  • a loss caused by a circulating current is reduced by the voltage clamping circuit.
  • a high efficient and small bi-directional DC-DC converter in which, at the time of the step-up/down operations, the generation of a surge voltage in the low voltage side circuit is prevented and a withstanding voltage of the switching element is reduced is provided.
  • Another object of the invention is to provide a small bi-directional DC-DC converter in which a large electric power can be outputted even at the time of a step-down operation.
  • a bi-directional DC-DC converter which comprises a high voltage side switching circuit, connected between a first DC power source and a transformer, for executing an electric power conversion between a direct current and an alternating current, a low voltage side switching circuit, connected between a second DC power source and the transformer, for executing an electric power conversion between a direct current and an alternating current, and a control circuit for controlling ON/OFF of switching elements included in each of the switching circuits and in which an electric power is transmitted and received between the first and second DC power sources, wherein the high voltage side switching circuit includes a first vertical arm in which a first upper arm switching element and a first lower arm switching element are serially connected, a second vertical arm in which a second upper arm switching element and a second lower arm switching element are serially connected, a first smoothing capacitor connected in parallel to the first and second vertical arms and the first DC power source, and a series connector which is connected between a series node of the first upper arm switching element and the first lower arm switching
  • control circuit further includes means for switching the first lower arm switching element and the second upper arm switching element to ON while keeping the switching elements switched to ON by the first switching means in the ON state and, after a direction of a current flowing in the primary winding was reversed, switching the switching elements in the ON state to OFF.
  • control circuit further includes: third switching means for switching the switching elements in the OFF state in the second switching element group to ON for a period of time during which both of the first lower arm switching element and the second upper arm switching element are in the ON state; and fourth switching means for switching the first upper arm switching element and the second lower arm switching element to ON while keeping the switching elements switched to ON by the third switching means in the ON state.
  • control circuit further includes means for switching the first upper arm switching element and the second lower arm switching element to ON while keeping the switching elements switched to ON by the third switching means in the ON state and, after a direction of a current flowing in the primary winding was reversed, switching the switching elements in the ON state to OFF.
  • a voltage which is substantially twice as large as the first DC power source is applied to the series connector of the resonance reactor and the resonance capacitor for a period of time during which the switching elements switched to ON by the first or third switching means are in the ON state.
  • a bi-directional DC-DC converter which comprises a high voltage side switching circuit, connected between a first DC power source and a transformer, for executing an electric power conversion between a direct current and an alternating current, a low voltage side switching circuit, connected between a second DC power source and the transformer, for executing an electric power conversion between a direct current and an alternating current, and a control circuit for controlling ON/OFF of switching elements included in each of the switching circuits and in which an electric power is transmitted and received between the first and second DC power sources, wherein the high voltage side switching circuit includes a first vertical arm in which a first upper arm switching element and a first lower arm switching element are serially connected, a second vertical arm in which a second upper arm switching element and a second lower arm switching element are serially connected, a first smoothing capacitor connected in parallel to the first and second vertical arms and the first DC power source, and a series connector which is connected between a serial node of the first upper arm switching element and the first lower arm switching element and a serial no
  • the control means switches the upper or lower arm switching element in the ON state to OFF and, after a direction of a current flowing in the primary winding was reversed, switches the switching elements in the ON state in the first switching element group to OFF, and switches a state of the energy in the smoothing reactor from the accumulation to the emission.
  • control means controls a time which is necessary until the upper or lower arm switching element in the ON state is switched to OFF and the energy is supplied to the first DC power source after the switching elements in the ON state in the first switching element group were switched to OFF, thereby adjusting an amount of energy which is supplied to the first DC power source.
  • control circuit further includes: means for switching two of the first and second upper or lower arm switching elements to ON for the period of time during which the energy is supplied to the first DC power source; means for switching one of the upper and lower arm switching elements in the ON state to OFF after a direction of a current flowing in the primary winding was reversed; and means for switching the upper or lower arm switching elements in the ON state to OFF after the switching elements in the ON state in the first switching element group were switched to OFF and a state of the energy in the smoothing reactor was switched from the accumulation to the emission.
  • the first switching element group includes fifth to eighth switching elements
  • the second switching element group includes a ninth switching element
  • the voltage clamping circuit includes a series connector of the ninth switching element and the clamping capacitor
  • the low voltage side switching circuit includes a third vertical arm in which the fifth and sixth switching elements are serially connected and a fourth vertical arm in which the seventh and eighth switching elements are serially connected and is constructed in such a manner that the secondary winding is connected between a serial node of the fifth and sixth switching elements and a serial node of the seventh and eighth switching elements, the third and fourth vertical arms and the voltage clamping circuit are connected in parallel, one end of the smoothing reactor is connected to one end of the voltage clamping circuit, one end of the second smoothing capacitor is connected to the other end of the smoothing reactor, and the other end of the voltage clamping circuit is connected to the other end of the second smoothing capacitor.
  • the first switching element group includes fifth and sixth switching elements
  • the second switching element group includes seventh and eighth switching elements
  • the voltage clamping circuit is constructed by connecting one end of each of the seventh and eighth switching elements and one end of the clamping capacitor
  • the secondary winding has a connector of one end of a first secondary winding and one end of a second secondary winding
  • the low voltage side switching circuit is constructed in such a manner that one end of the fifth switching element and the other end of the seventh switching element are connected to the other end of the first secondary winding, one end of the sixth switching element and the other end of the eighth switching element are connected to the other end of the second secondary winding, the other end of the fifth switching element and the other end of the sixth switching element are connected to the other end of the clamping capacitor, and a series connector of the smoothing reactor and the second smoothing capacitor is connected between a node of the fifth and sixth switching elements and a node of the first and second secondary windings.
  • the first switching element group includes fifth and sixth switching elements
  • the second switching element group includes seventh and eighth switching elements
  • the voltage clamping circuit is constructed by connecting one end of the seventh switching element, one end of the eighth switching element, and one end of the clamping capacitor
  • the smoothing reactor is constructed by connecting one end of a first smoothing reactor and one end of a second smoothing reactor
  • the low voltage side switching circuit is constructed in such a manner that one end of the fifth switching element, the other end of the seventh switching element, and the other end of the first smoothing reactor are connected to one end of the secondary winding
  • one end of the sixth switching element, the other end of the eighth switching element, and the other end of the second smoothing reactor are connected to the other end of the secondary winding of the transformer
  • the other end of the fifth switching element and the other end of the sixth switching element are connected to the other end of the clamping capacitor
  • the second smoothing capacitor is connected between a node of the fifth and sixth switching elements and a node of the first and second smoothing reactors.
  • the clamping capacitor and the second smoothing capacitor are connected.
  • the resonance reactor has a leakage inductance and a wiring inductance of the transformer and includes first, second, and third resonance reactors which are respectively serially connected to the primary winding and the secondary winding and are magnetically coupled therewith, and the resonance capacitor includes first, second, and third resonance capacitors which are respectively serially connected to the primary winding and the secondary winding.
  • each of the switching elements has diodes which are connected in inverse parallel and snubber capacitors which are connected in parallel.
  • a control method of controlling a DC-DC converter which comprises a high voltage side switching circuit, connected between a first DC power source and a transformer, for executing an electric power conversion between a direct current and an alternating current, a low voltage side switching circuit, connected between a second DC power source and the transformer, for executing an electric power conversion between a direct current and an alternating current, and a control circuit for controlling ON/OFF of switching elements included in each of the switching circuits and in which the high voltage side switching circuit includes a first vertical arm in which a first upper arm switching element and a first lower arm switching element are serially connected, a second vertical arm in which a second upper arm switching element and a second lower arm switching element are serially connected, a first smoothing capacitor connected in parallel to the first and second vertical arms and the first DC power source, and a series connector which is connected between a serial node of the first upper arm switching element and the first lower arm switching element and a serial node of the second upper arm switching element and the second lower arm switching element
  • a control method of controlling a DC-DC converter which comprises a high voltage side switching circuit, connected between a first DC power source and a transformer, for executing an electric power conversion between a direct current and an alternating current, a low voltage side switching circuit, connected between a second DC power source and the transformer, for executing an electric power conversion between a direct current and an alternating current, and a control circuit for controlling ON/OFF of switching elements included in each of the switching circuits and in which the high voltage side switching circuit includes a first vertical arm in which a first upper arm switching element and a first lower arm switching element are serially connected, a second vertical arm in which a second upper arm switching element and a second lower arm switching element are serially connected, a first smoothing capacitor connected in parallel to the first and second vertical arms and the first DC power source, and a series connector which is connected between a serial node of the first upper arm switching element and the first lower arm switching element and a serial node of the second upper arm switching element and the second lower arm switching element
  • control processes of the control circuit included in the bi-directional DC-DC converter according to any one of the above embodiments are selectively switched in accordance with a propagating direction of the energy, an input voltage, an input current, an output voltage, and an output current.
  • the small and high efficient bi-directional DC-DC converter constructed in such a manner that even when the step-up voltage ratio/output electric power is large at the time of the step-up operation, the voltage which is applied to the switching element of the low voltage side circuit is reduced can be provided.
  • the small and high efficient bi-directional DC-DC converter which can output the large electric power even at the time of the step-down operation can be provided.
  • FIG. 1 is a circuit constructional diagram of a bi-directional DC-DC converter according to an embodiment of the invention
  • FIG. 2 is a voltage/current waveform diagram for describing the step-down operation 1 of the bi-directional DC-DC converter according to the embodiment of the invention
  • FIG. 3 is a voltage/current waveform diagram for describing the step-down operation 2 of the bi-directional DC-DC converter according to the embodiment of the invention
  • FIG. 4 is a voltage/current waveform diagram for describing the step-up operation 1 of the bi-directional DC-DC converter according to the embodiment of the invention.
  • FIG. 5 is a voltage/current waveform diagram for describing the step-up operation 2 of the bi-directional DC-DC converter according to the embodiment of the invention.
  • FIG. 6 is a voltage/current waveform diagram for describing the step-up operation 3 of the bi-directional DC-DC converter according to the embodiment of the invention.
  • FIG. 1 is a circuit constructional diagram of a bi-directional DC-DC converter 5 according to the embodiment of the invention.
  • a smoothing capacitor 12 a load 14 , a first switching arm in which an emitter of an IGBT 101 and a collector of an IGBT 102 are connected, and a second switching arm in which an emitter of an IGBT 103 and a collector of an IGBT 104 are connected are connected in parallel to a power source 10 on a high voltage side.
  • Each of diodes 111 to 114 is connected between a collector and an emitter of each of the IGBTs 101 to 104 so as to allow a current to flow from the emitter side to the collector side.
  • body diodes may be used as diodes 111 to 114 .
  • Each of snubber capacitors 121 to 124 is connected between the collector and the emitter of each of the IGBTs 101 to 104 .
  • a primary winding 31 of a transformer 30 , a resonance reactor 20 , and a resonance capacitor 22 are serially connected between a node of the IGBTs 101 and 102 and a node of the IGBTs 103 and 104 .
  • the resonance reactor 20 may be replaced by a leakage inductance and a wiring inductance of the transformer 30 here.
  • a smoothing capacitor 42 and a load 44 are connected in parallel to a power source 40 on the low voltage side.
  • One end of a secondary winding 32 of the transformer 30 , one end of a secondary winding 33 of the transformer 30 , and one end of a smoothing reactor 46 are connected.
  • the other end of the smoothing reactor 46 is connected to a positive polarity of the power source 40 .
  • the other end of the secondary winding 32 is connected to a drain of a MOSFET 201 .
  • the other end of the secondary winding 33 is connected to a drain of a MOSFET 202 .
  • a source of the MOSFET 201 and a source of the MOSFET 202 are connected to a negative polarity of the power source 40 .
  • a source of the MOSFET 203 is connected to the drain of the MOSFET 201
  • a source of the MOSFET 204 is connected to the drain of the MOSFET 202
  • the other end of the clamping capacitor 48 is connected to the negative polarity of the power source 40 .
  • Each of diodes 211 to 214 is connected between the drain and the source of each of the MOSFETs 201 to 204 so as to allow a current to flow from the source side to the drain side.
  • Body diodes of MOSFETs can be also used as diodes 211 to 214 .
  • Each snubber capacitors may be connected between the drain and the source of each of the MOSFETs 201 to 204 .
  • the IGBTs 101 to 104 and MOSFETs 201 to 204 are switching-controlled by a control circuit 100 .
  • Voltage sensors 51 to 54 and current sensors 61 to 63 are connected to the control circuit 100 .
  • drain-source voltages V( 201 ) to V( 204 ) of the MOSFETs 201 to 204 the drain is set to be positive and, as for gate-source voltages Vg( 201 ) to Vg( 204 ), the gate is set to be positive.
  • Synthetic currents flowing in the MOSFETs 201 to 204 and the diodes 211 to 214 connected in parallel therewith are respectively assumed to be I( 201 ) to I( 204 ) when a direction of the current flowing from the drain to the source of each of the MOSFETs 201 to 204 is set to be positive.
  • a direction of the voltage applied from the second switching arm to the first switching arm is set to be positive.
  • a current I( 20 ) flowing in the resonance reactor 20 a direction of the current flowing from the first switching arm to the second switching arm is set to be positive.
  • a direction of the current flowing from a node of the MOSFETs 203 and 204 to the negative polarity of the power source 40 is set to be positive.
  • a voltage of the drain of each of the MOSFETs 203 and 204 in the case of setting the negative polarity of the power source 40 to a reference is assumed to be a voltage V( 48 ) of the clamping capacitor 48 .
  • a direction of a current I( 46 ) flowing in the smoothing reactor 46 is defined as follows.
  • a direction of the voltage applied from a node of the secondary winding 32 and the secondary winding 33 to the positive polarity of the power source 40 is set to be positive.
  • a direction of the voltage applied from the positive polarity of the power source 40 to the node of the secondary winding 32 and the secondary winding 33 is set to be positive.
  • a direction adapted to accelerate the current I( 46 ) in the smoothing reactor 46 in the positive direction is set to be positive.
  • the operation of the bi-directional DC-DC converter 5 according to the embodiment of the invention will be described in detail hereinbelow with reference to the drawings.
  • the operation for feeding the energy of the power source 10 to the power source 40 is assumed to be the step-down operation and the operation for feeding the energy of the power source 40 to the power source 10 is assumed to be the step-up operation.
  • FIG. 2 is a voltage/current waveform diagram for describing the step-down operation 1 .
  • the step-down operation 1 will be explained in detail hereinbelow with reference to FIG. 2 .
  • a 1 to h 1 denote periods of time.
  • the IGBTs 101 and 104 are in the ON state, the IGBTs 102 and 103 are in the OFF state, and the voltage of the power source 10 is applied to primary winding 31 of the transformer 30 through the IGBTs 101 and 104 , resonance capacitor 22 , and resonance reactor 20 .
  • the MOSFETs 202 and 203 are in the OFF state, the voltage developed in the secondary winding 32 is applied to the smoothing reactor 46 through the power source 40 and diode 211 , the current I( 46 ) increases gradually, and the energy is supplied to the power source 40 .
  • the voltages developed in the secondary windings 32 and 33 are applied to the clamping capacitor 48 through the diodes 214 and 211 , so that the clamping capacitor 48 is charged.
  • the IGBT 104 is turned off and, thereafter, the IGBT 103 is turned on.
  • the current I( 20 ) which has been flowing in the IGBT 104 discharges the snubber capacitor 123 while charging the snubber capacitor 124 .
  • the voltage V( 103 ) reaches the zero voltage, the diode 113 is made conductive.
  • the IGBT 103 is turned on (zero voltage switching).
  • the current I( 20 ) is refluxed by a path passing through the resonance reactor 20 , primary winding 31 , diode 113 , IGBT 101 , and resonance capacitor 22 .
  • the current flowing in the primary winding 31 as mentioned above is hereinbelow referred to as a circulating current.
  • the MOSFET 204 Since the MOSFET 204 is in the ON state, the current I( 201 ) is negative, and the voltage V( 201 ) is equal to the zero voltage, the voltage V( 48 ) of the clamping capacitor 48 is applied to the secondary windings 32 and 33 .
  • the voltage developed in the primary winding 31 is applied to the resonance reactor 20 and gradually decreases the current I( 20 ). Therefore, the circulating current decreases and the energy which is lost on the path through which the circulating current flows can be reduced. In association with the decrease in circulating current, a discharge current of the clamping capacitor 48 increases.
  • the MOSFET 204 is turned off and, thereafter, the MOSFET 202 is turned on.
  • the MOSFET 204 is turned off, the discharge of the clamping capacitor 48 is finished and the decrease in circulating current also becomes gentle.
  • the circulating current decreases gently.
  • the current which has been flowing in the MOSFET 204 is commutated to the diode 212 .
  • the synchronous rectification is performed.
  • the energy accumulated in the smoothing reactor 46 is supplied to the power source 40 and the current I( 46 ) decreases gradually.
  • the current I( 46 ) had been flowing on the path passing through the diode 211 (MOSFET 201 ) and secondary winding 32 for the period of time a 1
  • the current is also shunted to a path passing through the diode 212 (MOSFET 202 ) and secondary winding 33 for the period of time c 1 .
  • the more the circulating current is reduced the more the current is equivalently shunted to those two paths. Consequently, the conduction loss can be reduced.
  • a circulating current value necessary to enable the IGBT 102 to perform the zero voltage switching can be arithmetically operated from a voltage of the power source 10 (voltage sensor 51 ), an electrostatic capacitance of the resonance capacitor 22 , an inductance of the resonance reactor 20 , electrostatic capacitances of the snubber capacitors 121 to 124 , and a dead time of the IGBTs 101 and 102 (or a dead time of the IGBTs 103 and 104 ).
  • off timing for the MOSFET 204 has to be accurately decided.
  • Such timing can be arithmetically operated on the basis of an off time lag of the IGBT 104 and the MOSFET 204 from the voltage of the power source 40 (voltage sensor 52 ), the current I( 46 ) in the smoothing reactor 46 (current sensor 62 ), and a turn ratio of the transformer 30 in addition to the information which has been used in order to obtain the circulating current value necessary to enable the IGBT 102 to perform the zero voltage switching in the above process, or the off timing for the MOSFET 204 may be determined on the basis of a measurement value from the current sensor 61 showing the input current of a full bridge and a measurement value from the current sensor 63 showing the circulating current.
  • the IGBT 101 is turned off and, thereafter, the IGBT 102 is turned on and the MOSFET 201 is turned off.
  • the IGBT 101 is turned off, the circulating current which has been flowing in the IGBT 101 discharges the snubber capacitor 122 while charging the snubber capacitor 121 .
  • the voltage V( 102 ) reaches the zero voltage, the diode 112 is made conductive.
  • the IGBT 102 is turned on (zero voltage switching).
  • the MOSFET 201 is turned off before the period of time d 1 is finished.
  • the circulating current flows in the diode 112 , resonance capacitor 22 , resonance reactor 20 , primary winding 31 , and diode 113 and reaches the power source 10 .
  • the voltage of the power source 10 is applied to the resonance reactor 20 and the circulating current decreases.
  • the IGBTs 102 and 103 are in the ON state, after the circulating current reached zero, the circulating current increases in the reverse direction. In association with it, the current flowing through the diode 211 (MOSFET 201 ) and the secondary winding 32 decreases and the current flowing through the diode 212 (MOSFET 202 ) and the secondary winding 33 increases. The MOSFET 201 is turned off before the current flowing through the secondary winding 32 reaches zero (the current flowing through the secondary winding 33 reaches the current I( 46 )).
  • the MOSFET 203 is turned on.
  • the diode 211 is reversely made conductive and, thereafter, reversely recovered.
  • the current which had been flowing during the reverse conduction is commutated to the diode 213 after the diode 211 was reversely recovered.
  • the MOSFET 203 is turned on (zero voltage switching).
  • the MOSFET 203 can be also turned on by detecting such a voltage increase by the voltage sensor 53 .
  • the voltage of the power source 10 has been applied to the primary winding 31 of the transformer 30 through the IGBTs 102 and 103 , resonance capacitor 22 , and resonance reactor 20 .
  • the MOSFETs 201 and 204 are in the OFF state, the voltage developed in the secondary winding 33 is applied to the smoothing reactor 46 through the power source 40 and diode 212 , the current I( 46 ) increases gradually, and the energy is supplied to the power source 40 .
  • the voltages developed in the secondary windings 32 and 33 are applied to the clamping capacitor 48 through the diodes 213 and 212 , thereby charging the clamping capacitor 48 .
  • the operation for the period of time e 1 is symmetrical with the operation for the period of time a 1 . Subsequently, after the periods of time f 1 to h 1 , the operation cycle is returned to the period of time a 1 . Since the operations for the periods of time f 1 to h 1 are symmetrical with those for the periods of time b 1 to d 1 , their detailed description is omitted here.
  • the resonance capacitor 22 Since the voltage is developed in the resonance capacitor 22 in the direction adapted to raise the voltage which is applied to the primary winding 31 for the periods of time a 1 and e 1 mentioned above, the resonance capacitor 22 provides an effect of increasing the output electric power.
  • the voltage clamping circuit suppresses the generation of the surge voltage as mentioned above. Therefore, the voltage clamping circuit has such an effect that elements of a low withstanding voltage can be used as diodes 211 and 212 and MOSFETs 201 and 202 .
  • the zero voltage switching at the time of turning on the IGBTs 101 and 102 can be realized as mentioned above. Therefore, since the circulating current decreases at the time of the small load, it is difficult to perform the zero voltage switching. To solve such a problem, for example, if the MOSFET 204 is turned off and the MOSFET 204 is turned on for the periods of time b 1 and c 1 prior to turning off the IGBT 104 , since the circulating current increases, the zero voltage switching at the time of turning on the IGBT 101 can be realized even in the case of the small load. Order of the timing for turning on the MOSFET 202 and the timing for turning off the IGBT 104 is not limited.
  • the above operating method has an effect of improving the efficiency even at the time of the small load.
  • a time-dependent ratio of the period of time during which the IGBTs 101 and 104 are simultaneously in the ON state and a time-dependent ratio of the period of time during which the IGBTs 102 and 103 are simultaneously in the ON state are changed, thereby adjusting the output electric power.
  • Such a time-dependent ratio is called a duty.
  • the step-down operation 2 which will be described hereinbelow is applied.
  • FIG. 3 is a voltage/current waveform diagram for describing the step-down operation 2 .
  • the step-down operation 2 will be described in detail hereinbelow with reference to FIG. 3 .
  • a 2 to f 2 correspond to the periods of time a 2 to f 2 .
  • the operation for the period of time a 2 is similar to that for the period of time a 1 of the step-down operation 1 mentioned above and its detailed explanation is omitted here.
  • the ON/OFF states of the IGBTs 101 and 104 coincide in the step-down operation 2 .
  • the current I( 20 ) discharges the snubber capacitor 122 while charging the snubber capacitor 121 and discharges the snubber capacitor 123 while charging the snubber capacitor 124 .
  • the diode 112 is made conductive.
  • the diode 113 is made conductive.
  • the IGBTs 102 and 103 are turned on (zero voltage switching).
  • the current I( 20 ) flows through the diode 112 , resonance capacitor 22 , resonance reactor 20 , primary winding 31 , and diode 113 and reaches the power source 10 . Since the MOSFET 204 is in the ON state, the current I( 20 ) is negative, and voltage V( 201 ) is equal to the zero voltage, the voltage V( 48 ) in the clamping capacitor 48 is applied to the secondary windings 32 and 33 . The voltage of the power source 10 is applied to the resonance reactor 20 and the current I( 20 ) decreases.
  • the voltage developed in the primary winding 31 is also additionally applied to the resonance reactor 20 , a decreasing speed of the current I( 20 ) is higher than that for each of the periods of time b 1 and d 1 in the step-down operation 1 .
  • the voltage developed in the primary winding 31 is almost equal to the voltage of the power source 10 here.
  • the voltage has also been developed in the resonance capacitor 22 in the same direction as that of the voltage developed in the primary winding 31 .
  • the voltage which is twice or more times as high as the voltage of the power source 10 is applied to the resonance reactor 20 .
  • the energy accumulated in the smoothing reactor 46 is supplied to the power source 40 and the current I( 46 ) decreases gradually.
  • the MOSFET 201 is turned off before the current flowing in the secondary winding 32 reaches zero (the current flowing in the secondary winding 33 reaches the current I( 46 )).
  • the operation for the period of time d 2 is similar to that for the period of time e 1 of the step-down operation 1 and its detailed explanation is omitted here.
  • the operation for the period of time d 2 is symmetrical with that for the period of time a 2 .
  • the operation cycle is returned to the period of time a 2 . Since the operations for the periods of time e 2 and f 2 are symmetrical with those for the periods of time b 2 and c 2 , their detailed description is omitted here.
  • the resonance capacitor 22 has an effect of increasing the output electric power.
  • the voltage clamping circuit has such an effect that elements of a low withstanding voltage can be used as diodes 211 and 212 and MOSFETs 201 and 202 .
  • the positive voltage is applied to the smoothing reactor 46 and the voltage which is twice or more times as high as the voltage of the power source 10 is applied to the resonance reactor 20 and a change ratio of the current I( 20 ) is increased, thereby extending the periods of time a 2 and d 2 .
  • the voltage which is twice or more times as high as the voltage of the power source 10 is applied to the resonance reactor 20 .
  • the voltage which is applied to the resonance reactor 20 is equal to a voltage which is about twice as high as the voltage of the power source 10 .
  • a point that the electric power larger than the maximum output electric power in the step-down operation 1 can be outputted is a maximum advantage.
  • the ON/OFF states of the IGBTs 101 and 104 coincide, the ON/OFF states of the IGBTs 102 and 103 coincide as mentioned above, and the duty is maximum. Therefore, the output electric power is adjusted by changing the durations of the periods of time b 2 and e 2 , that is, by changing the off timing of the MOSFETs 203 and 204 .
  • the off timing can be delayed to a point before or after the timing when the diodes 211 and 212 are reversely recovered.
  • the off timing of the MOSFETs 203 and 204 can be also decided by detection signals from the voltage sensors 53 and 54 for detecting the reverse recovery of the diodes 211 and 212 . In this case, the periods of time c 2 and f 2 do not exist.
  • FIG. 4 is a voltage/current waveform diagram for describing the step-up operation 1 .
  • the step-up operation 1 will be explained in detail hereinbelow with reference to FIG. 4 .
  • a 1 to F 1 denote periods of time.
  • the MOSFETs 201 and 202 are in the ON state and the MOSFETs 202 and 203 are in the OFF state.
  • the voltage of the power source 40 is applied to the smoothing reactor 46 through the secondary windings 32 and 33 and MOSFETs 201 and 202 and the energy of the power source 40 is accumulated to the resonance reactor 46 .
  • the IGBT 103 is in the ON state, the IGBTs 101 , 102 , and 104 are in the OFF state, and the circulating current flows on a path passing through the IGBT 103 , primary winding 31 , resonance reactor 20 , resonance capacitor 22 , and diode 111 . Since the charges have been accumulated in the resonance capacitor 22 and the voltage has been developed in the direction adapted to increase the circulating current, the circulating current increases gradually.
  • the MOSFET 202 and IGBT 103 are turned off, the current which has been flowing in the MOSFET 202 flows in the diode 214 , thereby charging the clamping capacitor 48 . At this time, the MOSFET 204 is turned on (zero voltage switching). The circulating current which has been flowing in the IGBT 103 discharges the snubber capacitor 124 while charging the snubber capacitor 123 . When the voltage V( 104 ) reaches the zero voltage, the diode 114 is made conductive. At this time, the IGBT 104 is turned on (zero voltage switching).
  • the voltage V( 48 ) of the clamping capacitor 48 is applied to the secondary windings 32 and 33 .
  • the voltage obtained by subtracting the voltage of the power source 10 from the voltage developed in the primary winding 31 is applied to the resonance reactor 20 and the magnitude of the current I( 20 ) increases.
  • the current I( 20 ) flows through the diode 114 , primary winding 31 , resonance reactor 20 , resonance capacitor 22 , and diode 111 and reaches the power source 10 .
  • the energy is supplied to the power source 10 .
  • the energy accumulated in the smoothing reactor 46 is emitted and the current I( 46 ) decreases.
  • the MOSFET 204 When the MOSFET 204 is turned off, the discharge current of the clamping capacitor 48 which has been flowing in the MOSFET 204 makes the diode 212 conductive. At this time, the MOSFET 202 is turned on (zero voltage switching).
  • the voltage of the power source 40 is applied to the smoothing reactor 46 and the energy of the power source 40 is accumulated in the smoothing reactor 46 .
  • the diode 111 is reversely made conductive. After that, when the diode is reversely recovered, a snubber capacitor C 102 is discharged while the snubber capacitor 121 is charged. When the voltage V( 102 ) reaches the zero voltage, the diode 112 is made conductive.
  • the energy of the power source 10 accumulated in the resonance reactor 20 becomes the circulating current flowing on the path passing through the diode 112 , resonance capacitor 22 , resonance reactor 20 , primary winding 31 , and IGBT 104 . Since the charges have been accumulated in the resonance capacitor 22 and the voltage has been developed in the direction adapted to increase the circulating current, the circulating current increases gradually.
  • the voltage of the power source 40 is applied to the smoothing reactor 46 and the energy of the power source 40 is accumulated in the smoothing reactor 46 .
  • the operation for the period of time D 1 is symmetrical with that for the period of time A 1 . Subsequently, after the periods of time E 1 and F 1 , the operation cycle is returned to the period of time A 1 . Since the operations for the periods of time E 1 and F 1 are symmetrical with those for the periods of time B 1 and C 1 , their detailed description is omitted here.
  • the synchronous rectification is performed.
  • the direction of the circulating current flowing when the MOSFET 202 is turned off for the period of time B 1 is equal to the direction of the energy which is sent to the power source 10 for the periods of time B 1 and C 1 . Therefore, the larger the circulating current is, the larger output electric power is liable to be obtained.
  • the current I( 202 ) at the time of turning off the MOSFET 202 decreases and the energy which is lost when the MOSFET 202 is turned off can be reduced. However, by shutting off the current I( 202 ), the energy is accumulated in the clamping capacitor.
  • the MOSFET 202 is turned on for the period of time C 1 , the zero voltage switching can be performed by using such an energy. Therefore, the larger the circulating current is, the more it is difficult to perform the zero voltage switching at the time of turning on the MOSFET 202 . This is true of the period of time E 1 .
  • the zero voltage switching at the time of turning on the MOSFET 202 becomes difficult.
  • the IGBT 103 is turned off for the period of time B 1 prior to turning off the MOSFET 202 , since the circulating current is reduced or reversely flows, the current to be shut off at the time of turning off the MOSFET 202 increases.
  • the zero voltage switching can be realized when the MOSFET 202 is turned on. This is true of the period of time E 1 .
  • the above operating method has an effect of raising the efficiency even at the time of the small load.
  • the output electric power is adjusted by changing the time-dependent ratio (on duty) of the ON periods of time of the MOSFETs 201 and 202 . If the on duty is increased, the voltage V( 48 ) of the clamping capacitor 48 rises and the voltage developed in the primary winding 31 also rises, so that the output electric power increases. However, the voltages which are applied to the clamping capacitor 48 , MOSFETs 201 to 204 , and diodes 211 to 214 are determined by the voltage of the power source 40 , the on duty, the wiring inductance, and the breaking currents of the MOSFETs 201 to 204 .
  • FIG. 5 is a voltage/current waveform diagram for describing the step-up operation 2 .
  • the step-up operation 2 will be explained in detail hereinbelow with reference to FIG. 5 .
  • a 2 to H 2 denote periods of time.
  • the operation for the period of time A 2 is similar to that for the period of time A 1 of the step-up operation 1 and its detailed explanation is omitted here.
  • the MOSFET 202 When the MOSFET 202 is turned off, the current which has been flowing in the MOSFET 202 flows in the diode 214 and charges the clamping capacitor 48 . At this time, the MOSFET 204 is turned on (zero voltage switching).
  • the IGBT 103 is in the ON state. Therefore, since the voltage obtained without subtracting the voltage of the power source 10 from the voltage developed in the primary winding 31 is applied to the resonance reactor 20 , the magnitude of the current I( 20 ) increases at a speed higher than that for the period of time B 1 of the step-up operation 1 . At this time, the current I( 20 ) flows on the same path of the circulating current as that for the period of time A 2 .
  • the energy accumulated in the smoothing reactor 46 is emitted and the current I( 46 ) decreases.
  • the IGBT 103 When the IGBT 103 is turned off, the circulating current which has been flowing in the IGBT 103 discharges the snubber capacitor 124 while charging a snubber capacitor C 103 .
  • the voltage V( 104 ) reaches the zero voltage, the diode 114 is made conductive. At this time, the IGBT 104 is turned on (zero voltage switching).
  • the voltage has been developed in the primary winding 31 in a manner similar to that for the period of time B 2 .
  • the current I( 20 ) flows through the diode 114 , primary winding 31 , resonance reactor 20 , resonance capacitor 22 , and diode 111 and reaches the power source 10 .
  • the energy is supplied to the power source 10 .
  • the energy accumulated in the smoothing reactor 46 is emitted and the current I( 46 ) decreases.
  • the operation for the period of time D 2 is similar to that for the period of time C 1 of the step-up operation 1 and its detailed explanation is omitted here.
  • the operation for the period of time E 2 is similar to that for the period of time D 1 of the step-up operation 1 and its detailed explanation is omitted here.
  • the operation for the period of time E 2 is symmetrical with that for the period of time A 2 .
  • the operation cycle is returned to the period of time A 2 . Since the operations for the periods of time F 2 to H 2 are symmetrical with those for the periods of time B 2 to D 2 , their detailed description is omitted here.
  • the output electric power is adjusted by changing the off timing of the IGBTs 103 and 104 and by changing the duration of the periods of time B 2 and F 2 . If the off timing of the IGBTs 103 and 104 is delayed, a change ratio of the current I( 20 ) for each of the periods of time C 2 and G 2 decreases, a voltage drop due to a resonance reactor L is suppressed, and the output electric power increases. However, if the output electric power is increased by delaying the off timing of the IGBTs 103 and 104 , a peak value of the current I( 20 ) increases. The breaking currents of the MOSFETs 201 and 202 increase.
  • step-up operation 3 which will be described hereinbelow is applied.
  • FIG. 6 is a voltage/current waveform diagram for describing the step-up operation 3 .
  • the step-up operation 3 will be explained in detail hereinbelow with reference to FIG. 6 .
  • a 3 to H 3 denote periods of time.
  • the operation for the period of time B 3 is similar to that for the period of time B 2 of the step-up operation 2 and its detailed explanation is omitted here.
  • the operation for the period of time C 3 is similar to that for the period of time C 2 of the step-up operation 2 and its detailed explanation is omitted here.
  • the operation which is executed for a period of time until the magnitude of the current I( 20 ) decreases and reaches zero is similar to that for the period of time D 2 of the step-up operation 2 and its detailed explanation is omitted here.
  • the IGBTs 101 and 104 are in the ON state, the direction of the current I( 20 ) is reversed and the current I( 20 ) increases.
  • the energy of the power source 10 is accumulated in the resonance reactor 20 .
  • the current I( 20 ) discharges the snubber capacitor 122 while charging the snubber capacitor 121 .
  • the diode 112 is made conductive.
  • the zero voltage switching is performed.
  • Other operations are similar to those for the period of time E 2 of the step-up operation 2 and their detailed explanation is omitted here.
  • the operation for the period of time E 3 is symmetrical with that for the period of time A 3 . Subsequently, after the periods of time F 3 to H 3 , the operation cycle is returned to the period of time A 3 . Since the operations for the periods of time F 3 to H 3 are symmetrical with those for the periods of time B 3 to D 3 , their detailed description is omitted here.
  • the durations of the periods of time D 3 and H 3 are changed. That is, the output electric power is adjusted by changing the off timing of the IGBTs 101 and 102 . If the off timing of the IGBTs 101 and 102 is delayed, the circulating currents for the periods of time A 3 and E 3 increase and the output electric power increases.
  • the voltage clamping circuit accumulates the energy of the current which is shut off when the MOSFETs 201 and 202 are turned off, thereby suppressing that the surge voltage is generated in the drain voltage of each of the MOSFETs 201 and 202 . Therefore, the voltage clamping circuit has such an effect that elements of a low withstanding voltage can be used as diodes 211 and 212 and MOSFETs 201 and 202 .
  • the voltage has been developed in the resonance capacitor 22 in the direction adapted to increase the circulating current for the period of time during which the circulating current flows. Therefore, the resonance capacitor 22 has an effect of increasing the output electric power.
  • step-down operations 1 and 2 and the foregoing step-up operations 1 , 2 , and 3 can be also switched and executed, respectively.
  • the switching of the step-down operations and step-up operations of the bi-directional DC-DC converter 5 will be described hereinbelow.
  • the step-down operation 1 is applied at the small load.
  • the duty increases in association with an increase in load. A time difference between the off timing of the IGBT 103 and the off timing of the MOSFET 203 and a time difference between the off timing of the IGBT 104 and the off timing of the MOSFET 204 decrease and those time differences are soon eliminated.
  • the step-up operation 1 is applied at the small load.
  • the on duties of the MOSFETs 201 and 202 increase in association with the increase in load.
  • a time difference between the off timing of the MOSFET 202 and the off timing of the IGBT 103 and a time difference between the off timing of the MOSFET 201 and the off timing of the IGBT 104 decrease and those time differences are soon eliminated.
  • the on duty reaches an upper limit.
  • the reason why there is an upper limit in the on duty has already been described in the explanation of the step-up operation 1 .
  • the step-up operation 2 is applied. Specifically speaking, a time which is necessary until the IGBT 103 is turned off after the MOSFET 202 was turned off and a time which is necessary until the IGBT 104 is turned off after the MOSFET 201 was turned off are extended.
  • the duration of the time reaches an upper limit. The reason why there is an upper limit in the duration of the time has already been described in the explanation of the step-up operation 2 .
  • the step-up operation 3 is applied.
  • the bi-directional DC-DC converter 5 has such a feature that, in the cases of both of the step-down operation and the step-up operation, by switching a plurality of operations in accordance with a load state, the small insulating type bi-directional DC-DC converter in which the high efficiency and high output are obtained even in the case of the small load can be realized.
  • the invention is not limited to the foregoing embodiments. Naturally, the invention can be also applied to various circuit constructions in which, for example, a current doubler synchronous rectifying circuit may be used in place of the switching circuit on the low voltage side, the switching elements of the switching circuit on the low voltage side are constructed in a full bridge form, and the like.
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