US20110215678A1 - Piezoelectric resonator device, manufacturing method for piezoelectric... - Google Patents

Piezoelectric resonator device, manufacturing method for piezoelectric... Download PDF

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US20110215678A1
US20110215678A1 US13/129,182 US200913129182A US2011215678A1 US 20110215678 A1 US20110215678 A1 US 20110215678A1 US 200913129182 A US200913129182 A US 200913129182A US 2011215678 A1 US2011215678 A1 US 2011215678A1
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lid member
joining
region
lower lid
piezoelectric vibration
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Naoki Kohda
Hiroki Yoshioka
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Daishinku Corp
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Daishinku Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0552—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the device and the other elements being mounted on opposite sides of a common substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/02—Forming enclosures or casings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/03—Assembling devices that include piezoelectric or electrostrictive parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2325/00—Details relating to properties of membranes
    • B01D2325/02—Details relating to pores or porosity of the membranes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C12/00—Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/40—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using liquids, e.g. salt baths, liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/045—Modification of the area of an element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/045—Modification of the area of an element
    • H03H2003/0457—Modification of the area of an element of an electrode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Definitions

  • the present invention relates to a piezoelectric resonator device used in electronic equipment or the like, a manufacturing method for a piezoelectric resonator device, and a method for etching a constituent member of a piezoelectric resonator device.
  • a package used in a surface-mount crystal resonator is constituted by joining a crystal resonator plate to the interior of a box-like container having an opening in the top, and thereafter hermetically sealing the opening with a lid.
  • the container is generally a burning body of ceramics.
  • Patent Documents 1 and 2 disclose crystal resonators having a configuration in which a container and lids such as described are constituted by a pair of crystal plates, for example, and a crystal resonator plate formed by integrating a resonating portion where an excitation electrode is formed with a frame portion formed along the outer periphery of the resonating portion is sandwiched between the pair of crystal plates, with the joining material in between.
  • Patent Document 3 discloses another crystal resonator different from the crystal resonators described in Patent Documents 1 and 2, in which upper and lower lids constituted by a pair of crystal plates and a crystal resonator plate, such as described, are joined directly to one another.
  • the surfaces of the upper and lower lids (pair of crystal plates) and the surface of the crystal resonator plate undergo mirror finishing as in the case of the crystal resonators according to Patent Documents 1 and 2, and are formed as flat smooth surfaces having very little unevenness. Under such surface conditions of the upper and lower lids and the crystal resonator plate, it is difficult to obtain enough joining strength in joining the surfaces of the upper and lower lids and the surface of the crystal resonator plate to the joining material.
  • Patent Document 2 JP 6-310971A
  • Patent Document 3 Publication of Japanese Patent No. 3319221
  • the present invention has been conceived in light of the above-described problems, and it is an object of the present invention to provide a piezoelectric resonator device that improves the joining strength between a joining material and constituent members of the piezoelectric resonator device and reduces the manufacturing cost, a manufacturing method for such a piezoelectric resonator device, and a method for etching the constituent members of the piezoelectric resonator device.
  • the piezoelectric resonator device includes a piezoelectric resonator plate where an excitation electrode is formed; and an upper lid member and a lower lid member that hermetically seal the excitation electrode, the piezoelectric resonator plate having a joining region where the upper lid member is joined and a joining region where the lower lid member is joined, on front and back main surfaces, the upper lid member having a joining region on one main surface where the piezoelectric resonator plate is joined, the lower lid member having a joining region on one main surface where the piezoelectric resonator plate is joined and a joining region on the other main surface where an external member is joined, wherein a joining layer constituting a joining material is formed in each of the joining region of the piezoelectric resonator plate, the joining region of the upper lid member, and the joining region of the lower lid member, the joining region of the piezoelectric resonator plate and the joining region of the upper lid member are joined to each
  • the substrate of the joining region of a constituent member of the piezoelectric resonator device has a roughened surface, so micro-unevenness formed by surface roughening of the substrate of the joining region functions as “wedges” against horizontal stress. That is, a so-called anchor effect is produced and improves the joining strength between the roughened substrate surface of the joining region and the joining material. Consequently, according to the piezoelectric resonator device of the present invention, hermeticity can be increased with the improved joining strength between the joining material and the constituent member of the piezoelectric resonator device, and also the manufacturing cost can be reduced because interatomic bonding that was required regarding joining in the conventional technology is not an absolute necessity.
  • another piezoelectric resonator device includes a piezoelectric resonator plate where an excitation electrode is formed; and an upper lid member and a lower lid member that hermetically seal the excitation electrode, the upper lid member having a joining region on one main surface where the lower lid member is joined, the lower lid member having a joining region on one main surface where the upper lid member is joined and a joining region on the other main surface where an external member is joined, wherein a joining layer constituting a joining material is formed in each of the joining region of the upper lid member and the joining region of the lower lid member, the joining region of the upper lid member and the joining region of the lower lid member are joined to each other via the joining material, and at least one of a substrate of the joining region of the upper lid member and a substrate of the joining region of the lower lid member has a roughened surface.
  • the substrate of the joining region of at least one of the upper lid member and the lower lid member has a roughened surface, so micro-unevenness formed by surface roughening of the substrate of the joining region functions as “wedges” against horizontal stress. That is, a so-called anchor effect is produced and improves the joining strength between the roughened substrate surface of the joining region and the joining material. Consequently, with the piezoelectric resonator device according to the present invention, hermeticity can be increased with the improved joining strength between the joining material and the constituent member of the piezoelectric resonator device, and also the manufacturing cost can be reduced because interatomic bonding that was required regarding joining in the conventional technology is not an absolute necessity.
  • the lower lid member may have a joining region on one main surface where the piezoelectric resonator plate is joined, and a substrate of the joining region of the lower lid member where the piezoelectric resonator plate is joined may have a roughened surface.
  • the lower lid member has a joining region on one main surface where the piezoelectric resonator plate is joined, and a substrate of the joining region where the piezoelectric resonator plate is joined has a roughened surface, so micro-unevenness formed by surface roughening of the substrate of the joining region functions as “wedges” against horizontal stress. That is, a so-called anchor effect is produced and improves the joining strength between the roughened substrate surface of the joining region and the joining material.
  • the joining layer formed on the roughened surface of the substrate of the joining region may have a roughened surface.
  • the joining layer formed on the roughened surface of the substrate of the joining region also has a roughened surface, for example when a plated layer is further formed using electrolytic plating techniques on the roughened surface of the joining layer formed on the substrate of the joining region, an anchor effect occurs between the plated layer and the joining layer having a roughened surface and improves mechanical strength in the case of temporarily joining the upper lid member, the lower lid member, and the piezoelectric resonator plate by ultrasonic waves.
  • the substrate of the joining region of the piezoelectric resonator plate may have a roughened surface
  • the substrate of the joining region of at least one of the upper lid member and the lower lid member may have a roughened surface
  • the substrate of the joining region of at least one of the upper lid member and the lower lid member may be formed to have a rougher surface than the substrate of the joining region of the piezoelectric resonator plate.
  • performing surface roughening on at least one of the upper lid member and the lower lid member, rather than on the piezoelectric resonator plate where the excitation electrode or the like is formed simplifies the surface roughening process.
  • a metal film electrode film
  • various degrees of thermal hysteresis to be applied to the crystal resonator plate can possibly affect the conditions of the electrode film.
  • the upper lid member and the lower lid member have no such an excitation electrode formed, so it is possible to reduce the influences to be expected on various properties of the piezoelectric resonator device. Roughening the substrate of the joining region of at least one of the upper lid member and the lower lid member, together with a resultant anchor effect acting on the joining material, produces a piezoelectric resonator device with favorable properties.
  • the joining region of at least one of the upper lid member and the lower lid member may have a roughened surface, and the joining region having a roughened surface may be formed wider inwardly of the one main surface in plan view than the joining region of the piezoelectric resonator plate.
  • the fluid joining material (joining layer) is prevented from flowing toward the inside of the piezoelectric resonator device.
  • a fillet of the joining material is more easily formed toward the joining region (surface-roughened region) of at least one of the upper lid member and the lower lid member that is formed wider inwardly. This fillet provides stronger joining between the piezoelectric resonator plate and at least one of the upper lid member and the lower lid member. That is, a forming region of the joining material where a fillet is to be formed can be controlled by controlling the surface-roughened region of at least one of the upper lid member and the lower lid member.
  • the main surface entirely of at least one of the upper lid member and the lower lid member may be roughened.
  • the main surface entirely of at least one of the upper lid member and the lower lid member is roughened.
  • the entirely roughened surface improves the adhesion of the electrode pattern to the main surface. This simplifies the surface roughening process and improves productivity as compared with the case of selectively performing surface roughening on only a region where the electrode pattern is formed.
  • the joining region of the piezoelectric resonator plate may have a roughened surface
  • a multi-surface joining portion for joining the joining material to a plurality of surfaces having different planar directions may be provided in the vicinity of the joining region of at least one of the upper lid member and the lower lid member
  • an enlargement preventing portion for preventing a region where the joining material is joined from being enlarged may be provided outside the multi-surface joining portion.
  • the roughened surface of the joining region of the piezoelectric resonator plate produces an anchor effect between the piezoelectric resonator plate and the joining material and accordingly improves the joining strength between the piezoelectric resonator plate and the joining material.
  • the provision of the multi-surface joining portion and the enlargement preventing portion in the vicinity of the joining region of at least one of the upper lid member and the lower lid member prevents the joining material from spreading in the main surface direction (planar direction) on the joining surface (one main surface) of at least one of the upper lid member and the lower lid member provided with the multi-surface joining portion and the enlargement preventing portion, when at least one of the upper lid member and the lower lid member provided with the multi-surface joining portion and the enlargement preventing portion is joined to the piezoelectric resonator plate via the joining material.
  • the provision of the multi-surface joining portion in at least one of the upper lid member and the lower lid member enables the joining material to be joined to a plurality of surfaces having different planar directions, thus producing an anchor effect and improving the strength of joining with the joining material.
  • the spread of the joining material (wetting) at a joining site (joining region) is a natural phenomenon occurring in heat-melt joining of the joining material.
  • the provision of the multi-surface joining portion in the vicinity of the joining region of at least one of the upper lid member and the lower lid member and the provision of the enlargement preventing portion outside the multi-surface joining portion prevent the joining material from flowing to (wetting) the end face of the piezoelectric resonator device and from penetrating into the internal space of the piezoelectric resonator device, even if the joining material spreads at the joining site after joining using the joining material.
  • the manufacturing method for a piezoelectric resonator device is a manufacturing method for a piezoelectric resonator device comprising a piezoelectric resonator plate where an excitation electrode is formed, and an upper lid member and a lower lid member that hermetically seal the excitation electrode, the piezoelectric resonator plate having a joining region where the upper lid member is joined and a joining region where the lower lid member is joined on front and back main surfaces, the upper lid member having a joining region on one main surface where the piezoelectric resonator plate is joined, the lower lid member having a joining region on one main surface where the piezoelectric resonator plate is joined, wherein the joining region of the piezoelectric resonator plate and the joining region of the upper lid member are joined to each other via a joining material, and the joining region of the piezoelectric resonator plate and the joining region of the lower lid member are joined to each other via a joining material, and the joining region of the piezoelectric resonator
  • the manufacturing method includes a metal film formation step of laminating a metal film constituted by at least two types of metals on a substrate of the joining region of at least one of the piezoelectric resonator plate, the upper lid member, and the lower lid member, a diffusion step of promoting metal diffusion inside the metal film by heat processing after the metal film formation step, and an etching step of roughening a surface of the substrate by performing wet etching with an etchant caused to penetrate into the metal film obtained after the diffusion step and thereby forming a large number of micropores in the surface of the substrate.
  • part of one main surface of a constituent member whose surface conditions are like a mirror finished surface having very little unevenness can be roughened. More specifically, a region not to be roughened is covered and thereby protected with a resin or the like, whereas a large number of micropores are formed in the substrate surface of a region to be roughened by not forming a protective film such as a resist and causing an etchant to penetrate into the substrate surface of the constituent member through the metal film (diffusion layer) where metal diffusion has occurred. This enables selective surface roughening.
  • hermeticity can be increased with the improved joining strength between the joining material and the constituent members of the piezoelectric resonator device, and also the manufacturing cost of the piezoelectric resonator device can be reduced because interatomic bonding that was required regarding joining in the conventional technology is not an absolute necessity.
  • the layer constituting the metal film may have a varying thickness.
  • the upper lid member and the lower lid member may be made of crystal or glass
  • the piezoelectric resonator plate may be made of crystal
  • the metal film formation step may involve forming the metal film by forming a Cr layer on the substrate of at least one of the upper lid member, the lower lid member, and the piezoelectric resonator plate and laminating an Au layer on the Cr layer, so as to form a two-layer configuration of the Cr layer and the Au layer
  • the diffusion step may involve roughening the surface of the substrate by diffusing Cr in the Cr layer into Au in the Au layer, performing wet etching using an etchant that is corrosive to the Cr and the crystal, and thereby forming a large number of micropores in the surface of the substrate.
  • the configuration of the metal film is a two-layer configuration of the Cr layer and the Au layer laminated one above the other.
  • the use of crystal for the upper lid member and the lower lid member provides good adhesion to the piezoelectric resonator plate.
  • the use of Au that is resistant to the etchant allows the etchant to penetrate into the substrate of the member where the metal film is formed without causing corrosion of the metal film, even if wet etching is performed through the metal film in which the Cr has been diffused. This produces a large number of micropores in the surface of the substrate under the metal film where metal diffusion has occurred and accordingly roughens the substrate surface.
  • the method for etching a constituent member of a piezoelectric resonator device according to the present invention is a method for etching a constituent member of a piezoelectric resonator device that has a joining region on at least one main surface where an external member is joined.
  • the etching method includes a metal film formation step of laminating a metal film constituted by at least two types of metals on a substrate of the joining region of the constituent member, a diffusion step of promoting metal diffusion inside the metal film by heat processing after the metal film formation step, and an etching step of roughening a surface of the substrate by performing wet etching with an etchant caused to penetrate into the metal film obtained after the diffusion step and thereby forming a large number of micropores in the surface of the substrate.
  • part of the main surface of at least one constituent member whose surface conditions are like a mirror finished surface having very little unevenness can be roughened. More specifically, a region not to be roughened is covered and thereby protected with a resin or the like, whereas a large number of micropores are formed in the substrate surface of a region to be roughened by not forming a protective film such as a resist and causing an etchant to penetrate into the substrate surface of the constituent member through the metal film (diffusion layer) in which metal diffusion has occurred. This enables selective surface roughening.
  • the joining strength between the piezoelectric resonator plate and the joining material, the joining strength between the upper lid member and the joining material, and the joining strength between the lower lid member and the joining material can be improved with the etching method according to the present invention.
  • the manufacturing cost of the piezoelectric resonator device can be reduced because interatomic bonding that was required regarding joining in the conventional technology is not an absolute necessity.
  • the piezoelectric resonator device As described above, with the piezoelectric resonator device, the manufacturing method for the piezoelectric resonator device, and the method for etching a constituent member of a piezoelectric resonator device according to the present invention, it is possible to improve the joining strength between the joining material and a constituent member of the piezoelectric resonator device (e.g., the piezoelectric resonator plate and the upper and lower lid members) and reduce the manufacturing cost of the piezoelectric resonator device.
  • a constituent member of the piezoelectric resonator device e.g., the piezoelectric resonator plate and the upper and lower lid members
  • FIG. 1 is a schematic cross-sectional view of a crystal resonator taken along the long side thereof according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic configuration diagram showing constituent members of the crystal resonator according to Embodiment 1 of the present invention.
  • FIG. 3 is a flowchart showing surface roughening according to Embodiment 1 of the present invention.
  • FIG. 4 is a schematic diagram showing surface roughening according to Embodiment 1 of the present invention.
  • FIG. 5 is a schematic diagram showing surface roughening according to Embodiment 1 of the present invention.
  • FIG. 6 is a schematic diagram showing surface roughening according to Embodiment 1 of the present invention.
  • FIG. 7 is a schematic diagram showing surface roughening according to Embodiment 1 of the present invention.
  • FIG. 8 is a schematic diagram showing surface roughening according to Embodiment 1 of the present invention.
  • FIG. 9 is a schematic diagram showing surface roughening according to Embodiment 1 of the present invention.
  • FIG. 10 is a schematic diagram showing surface roughening according to Embodiment 1 of the present invention.
  • FIG. 11 is a schematic diagram showing surface roughening according to Embodiment 1 of the present invention.
  • FIG. 12 is a schematic cross-sectional view of a crystal resonator taken along the long side thereof according to a modification of Embodiment 1 of the present invention.
  • FIG. 13 is a schematic configuration diagram showing constituent members of the crystal resonator according to the modification of Embodiment 1 of the present invention.
  • FIG. 14 is a schematic diagram showing surface roughening according to Embodiment 1 of the present invention.
  • FIG. 15 is a schematic diagram showing surface roughening according to Embodiment 1 of the present invention.
  • FIG. 16 is a schematic diagram showing surface roughening according to Embodiment 1 of the present invention.
  • FIG. 17 is a schematic diagram showing surface roughening according to Embodiment 1 of the present invention.
  • FIG. 18 is a schematic cross-sectional diagram of a crystal resonator taken along the long side thereof according to Embodiment 2 of the present invention.
  • FIG. 19 is a schematic cross-sectional diagram of a crystal resonator taken along the long side thereof according to Embodiment 3 of the present invention.
  • FIG. 20 is a schematic cross-sectional diagram of a crystal resonator taken along the long side thereof according to a modification of Embodiment 3 of the present invention.
  • FIG. 21 is a schematic cross-sectional diagram of a crystal resonator taken along the long side thereof according to Embodiment 4 of the present invention.
  • FIG. 22 is a schematic cross-sectional diagram of a crystal resonator taken along the long side thereof according to Embodiment 5 of the present invention.
  • FIG. 23 is a schematic cross-sectional diagram of a crystal resonator taken along the long side thereof according to a modification of the embodiments of the present invention.
  • FIG. 24 is a schematic plan view of a lower lid member of the crystal resonator according to the modification of the embodiments of the present invention.
  • FIG. 1 is a cross-sectional view of a crystal resonator 1 taken along the long side of a crystal resonator plate 2 according to Embodiment 1
  • FIG. 2 is a schematic configuration diagram showing constituent members of the crystal resonator 1 shown in FIG. 1 .
  • the main constituent members of the crystal resonator 1 according to Embodiment 1 include the crystal resonator plate 2 (a piezoelectric resonator plate according to the present invention), a lower lid member 3 that hermetically seals an excitation electrode 23 formed on one main surface 21 of the crystal resonator plate 2 , and an upper lid member 4 that hermetically seals an excitation electrode 23 formed on the other main surface 22 of the crystal resonator plate 2 .
  • the crystal resonator 1 is constituted by a package 11 formed by joining the crystal resonator plate 2 and the lower lid member 3 with a joining material 5 and joining the crystal resonator plate 2 and the upper lid member 4 with a joining material 5 .
  • Joining the lower lid member 3 and the upper lid member 4 via the crystal resonator plate 2 produces two internal spaces 12 in the package 11 , and the excitation electrodes 23 formed on both of the main surfaces 21 and 22 of the crystal resonator plate 2 are hermetically sealed in the respective internal spaces 12 .
  • the lower lid member 3 and the upper lid member 4 have substantially the same shape and substantially the same outer dimensions.
  • An external connection terminal 34 is formed on the underside (the other main surface) 37 of the lower lid member 3 , and a conducting path (via) 35 that is electrically connected to the external connection terminal 34 is formed through the lower lid member 3 along the thickness between both of the main surfaces 31 and 37 .
  • the crystal resonator plate 2 is a AT-cut crystal plate that is cut out at a predetermined angle.
  • the crystal resonator plate 2 includes a thin-walled resonating portion 20 where the excitation electrode 23 is formed, a rim portion 26 surrounding the resonating portion 20 , a frame portion 28 , and a thin-walled portion 27 , all of which are integrally formed.
  • the frame portion 28 as referred to herein annularly encircles the resonating portion 20 and the rim portion 26 and is formed thicker than the resonating portion 20 and the rim portion 26 .
  • the thin-walled portion 27 is formed thinner than the rim portion 26 between the rim portion 26 and the frame portion 28 .
  • the crystal resonator plate 2 (the resonating portion 20 , the rim portion 26 , the thin-walled portion 27 , and the frame portion 28 ) is formed by wet etching, and the excitation electrodes 23 are formed opposed to each other on the front and back faces (one main surface 21 and the other main surface 22 ) of the resonating portion 20 , using vapor deposition techniques.
  • the excitation electrodes 23 are formed in a film configuration of the order of Cr and Au from the bottom on the front and back main surfaces (one main surface 21 and the other main surface 22 ) of the resonating portion 20 . Note that the film configuration of the excitation electrodes 23 is not intended to be limited thereto and may be other film configurations.
  • extraction electrodes 24 are formed by being derived from the excitation electrodes 23 .
  • the extraction electrode 24 extracted from the other main surface 22 is derived from a boundary portion between the resonating portion 20 and the rim portion 26 through the resonating portion 20 along the thickness between the other main surface 22 and the one main surface 21 .
  • a first joining electrode 25 is formed at the end portion of the extraction electrode 24 .
  • An Au-plated layer 50 is formed over the first joining electrode 25 .
  • both of the main surfaces 21 and 22 of the crystal resonator plate 2 undergo mirror finishing and are formed as flat smooth surfaces.
  • both main surfaces 201 and 202 of the frame portion 28 are constituted as joining faces (joining regions) of the lower lid member 3 and the upper lid member 4
  • the resonating portion 20 is constituted as a resonating region.
  • a first joining material 51 to be joined to the lower lid member 3 is formed on the one main surface 201 of the frame portion 28 .
  • a second joining material 52 as a joining layer to be joined to the upper lid member 4 is formed on the other main surface 202 of the frame portion 28 .
  • the first joining material 51 and the second joining material 52 are formed to substantially the same width, and the first joining material 51 and the second joining material 52 have the same film configuration.
  • the first joining material 51 and the second joining material 52 are configured by laminating a plurality of metal films on both of the main surfaces 201 and 202 of the frame portion 28 .
  • the first joining material 51 and the second joining material 52 are configured by forming a Cr layer (not shown) and an Au layer (not shown) in order from the lowermost, using vapor deposition techniques, and then laminating an Au-plated layer (not shown) on those layers, using electrolytic plating techniques.
  • the lower lid member 3 is a flat plate that is rectangular in plan view, and a Z plate of crystal is used therefor.
  • the lower lid member 3 has substantially the same outer dimensions as the crystal resonator plate 2 in plan view.
  • the lower lid member 3 has a joining region (specifically, a joining surface 32 ) where the crystal resonator plate 2 is joined on one main surface 31 .
  • the joining surface 32 is an outer peripheral and surrounding region along the outer periphery of the one main surface 31 of the lower lid member 3 .
  • a second joining electrode 33 is formed on the one main surface 31 of the lower lid member 3 .
  • the second joining electrode 33 is joined to the first joining electrode 25 of the crystal resonator plate 2 via the Au-plated layer 50 .
  • a third joining material 53 as a joining layer to be joined to the crystal resonator plate 2 is formed on the joining surface 32 of the lower lid member 3 . More specifically, the third joining material 53 is formed by laminating a plurality of metal films on the joining surface 32 , that is, by forming a Cr layer (not shown) and an Au layer 531 by vapor deposition in order from the lowermost layer side, laminating an Au-Sn alloy layer 532 thereon, and further laminating an Au flash-plated layer 533 thereon. Alternatively, the third joining material 53 may be formed by forming a Cr layer and an Au layer by vapor deposition in order from the undersurface side and laminating a Sn-plated layer and an Au-plated layer in sequence thereon.
  • the third joining material 53 and the above-described second joining electrode 33 are formed at the same time, so the second joining electrode 33 and the third joining material 53 have the same configuration.
  • the third joining material 53 is formed to substantially the same width as the first joining material 51 .
  • the via 35 for providing conduction between the excitation electrodes 23 of the crystal resonator plate 2 and external devices is formed in the lower lid member 3 .
  • An electrode pattern 36 is formed through this via 35 from the second joining electrode 33 formed on the one main surface 31 of the lower lid member 3 to the external connection terminal 34 formed on the other main surface 37 .
  • the joining region (specifically, the joining surface 32 ) of the one main surface 31 (substrate) of the lower lid member 3 and a region thereof where the electrode pattern 36 is formed have a roughened surface.
  • a region of the one main surface 31 other than the region having a roughened surface has a flat smooth surface (mirror-finished surface).
  • the entire one main surface 31 of the lower lid member 3 is a flat smooth surface (mirror-finished surface), and the joining region (substrate) thereof is made to have a roughened surface through surface roughening (discussed later).
  • the upper lid member 4 is a flat plate that is rectangular in plan view, and a Z plate of crystal is used therefor, similarly to the lower lid member 3 .
  • the upper lid member 4 has substantially the same outer dimensions as the crystal resonator plate 2 in plan view.
  • the upper lid member 4 has a joining region (specifically, a joining surface 42 ) where the crystal resonator plate 2 is joined on one main surface 41 .
  • the joining surface 42 is an outer peripheral and surrounding region along the outer periphery of the one main surface 41 of the upper lid member 4 .
  • the joining surface 42 of the one main surface 41 (substrate) of the upper lid member 4 has a roughened surface, and a region of the one main surface 41 other than the region having a roughened surface has a flat smooth surface (mirror-finished surface).
  • the entire one main surface 41 of the upper lid member 4 has a flat smooth surface (mirror-finished surface).
  • the joining region (substrate) is made to have a roughened surface through surface roughening (discussed later). Note that, in order to clearly show such roughened-surface conditions of the one main surface 41 of the upper lid member 4 in the description of Embodiment 1, unevenness of the roughened surface region (joining region) is shown in an emphasized manner in FIGS. 1 and 2 .
  • a fourth joining material 54 as a joining layer to be joined to the crystal resonator plate 2 is formed on the joining surface 42 of the upper lid member 4 . More specifically, the fourth joining material 54 is formed by laminating a plurality of metal films on the joining surface 42 , that is, by forming a Cr layer (not shown) and an Au layer 541 by vapor deposition in order from the lowermost layer side, laminating an Au-Sn alloy layer 542 thereon, and further laminating an Au flash-plated layer 543 thereon. Alternatively, the fourth joining material 54 may be formed by forming a Cr layer and an Au layer by vapor deposition in order from the undersurface side and laminating a Sn-plated layer and an Au-plated layer in sequence thereon. The fourth joining material 54 is formed to substantially the same width as the second joining material 52 .
  • the joining region (seal path) of the first joining material 51 formed on the joining surface of the crystal resonator plate 2 (the one main surface 201 of the frame portion 28 ), and the joining region (seal path) of the third joining material 53 formed on the joining surface 32 of the lower lid member 3 have the same width.
  • the joining region (seal path) of the second joining material 52 formed on the joining surface of the crystal resonator plate 2 (the other main surface 202 of the frame portion 28 ), and the joining region (seal path) of the fourth joining material 54 formed on the joining surface 42 of the upper lid member 3 have the same width.
  • FIG. 3 is a flowchart showing a surface roughening process.
  • a metal film (Cr layer and Au layer) including two types of metals (Cr and Au) is laminated and formed using vapor deposition techniques on the joining surface sides (one main surfaces 31 and 41 ) of the lower lid member 3 and the upper lid member 4 on which the crystal resonator plate 2 is joined (metal film formation step in FIG. 3 ).
  • the metal film formed by vapor deposition is constituted by two types of metals, the number of the types of metals is not limited to two, and a metal film may be configured of two or more types of metals.
  • a resist is applied onto the metal film by spin coating (first resist application step in FIG. 3 ) and exposed to light so as to form a resist pattern having a predetermined outer shape. Then, part of the metal film is exposed by development (outer exposure and development step in FIG. 3 ). The exposed metal film is dissolved by metal etching so that the crystal substrates of the lower lid member 3 and the upper lid member 4 are exposed (outer metal etching step in FIG. 3 ). Thereafter, the remaining resist is stripped off, using a stripping solution (first resist stripping step in FIG. 3 ).
  • heat processing is performed on the metal film (Cr and Au) which has been formed in a predetermined pattern. Performing heat processing in this way promotes metal diffusion inside the metal film (diffusion step in FIG. 3 ).
  • the thickness of the Cr layers formed on the substrates of the lower lid member 3 and the upper lid member 4 are much thinner than that of the Au layers, and a diffusion layer is formed by diffusing Cr inside or on the surface of the Au layers by controlling the heating temperature and the heating time (see FIG. 5 ).
  • the inventors assume that the diffusion of Cr into the AU layer in the diffusion step produces a plurality of “conducting paths” for Cr inside the diffusion layer, each conducting path being constituted by Cr atoms continuously connected along the thickness of the diffusion layer (see the connection of Cr in FIG. 6 ).
  • the thickness of the layer of the metal film (Cr layer and Au layer) constituted by two types of metals (Cr and Au) shown in FIG. 4 is not intended to be limited to the one shown in FIG. 4 and may be an arbitrary thickness.
  • the amount of Cr to be diffused by heat processing may be controlled by increasing or reducing the thickness of Cr as a base metal relative to the thickness of Au, which enables control of the formation of micropores by an etchant penetrating into the Cr layer after the diffusion step. That is, roughened surface conditions can be controlled.
  • a resist is applied again to the diffusion layer (second resist application step in FIG. 3 ). Then, as shown in FIG. 7 , the resist on a region whose surface is to be roughened is removed by exposure and development (roughened-surface pattern exposure and development step in FIG. 3 ).
  • the metal film is charged into an etchant (in Embodiment 1, a solution of ammonium fluoride) and subjected to wet etching (etching step in FIG. 3 ).
  • an etchant in Embodiment 1, a solution of ammonium fluoride
  • the etchant penetrates into the region of the metal film that is not covered with the resist, reaches the substrate of crystal under the metal film (diffusion layer), and causes corrosion of the substrate surface of crystal. This is considered due to the presence of a plurality of “conducting paths” for Cr formed in the metal film in the diffusion step as shown in FIG. 6 .
  • the etchant penetrates into the metal film through the “conducting paths” and accordingly a large number of micropores (pin holes) are formed in the surface of the crystal substrate surface (see FIG. 9 ). In this way, the substrate surface of crystal under the metal film (diffusion layer) can be roughened through the metal film. Meanwhile, a portion of the crystal substrate that is covered with the resist under the metal film is left without corrosion by the etchant, because the resist is made of a material that is highly corrosion resistant to the etchant.
  • the resist is stripped off using a stripping solution as shown in FIG. 10 (second resist removal step in FIG. 3 ). Then, the metal film that remains on the crystal substrate is removed by metal etching (overall metal etching step in FIG. 3 ). This metal etching causes the crystal substrate in the roughened-surface region and the crystal substrate in the mirror surface region to be exposed (see FIG. 11 ).
  • the above has been a description of surface roughening of the joining regions of the lower lid member 3 , the upper lid member 4 , and the crystal resonator plate 2 .
  • Next is a description of a manufacturing method for the crystal resonator 1 using the lower lid member 3 and the upper lid member 4 that have been subjected to surface roughening as described above.
  • Embodiment 1 With a wafer on which a large number of lower lid members 3 are formed collectively, an individual crystal resonator plate 2 is disposed on each of the lower lid members 3 , an individual upper lid member 4 is disposed on each of the crystal resonator plates 2 , and thereafter the wafer is diced into a large number of individual crystal resonators 1 .
  • a description is given of the manufacturing method for such crystal resonators 1 .
  • the present invention is not intended to be limited to the forms of members described in Embodiment 1, and a method is possible in which, using a wafer on which large numbers of all of the constituent members of the package 11 , namely lower lid members 3 , crystal resonator plates 2 , and upper lid members 4 , are formed collectively, the crystal resonator plates 2 are disposed on the lower lid members 3 , the upper lid members 4 are disposed on the crystal resonator plates 2 , and thereafter the wafer is diced into individual crystal resonators 1 . This case is suitable for the mass production of crystal resonators 1 .
  • a wafer on which a large number of lower lid members 3 are formed collectively is disposed with one main surfaces 31 of the lower lid members 3 facing upward.
  • individual crystal resonator plates 2 are disposed at positions determined by image recognition means on the one main surfaces 31 of the lower lid members 3 on the wafer so that the one main surfaces 21 of the crystal resonator plates 2 face the one main surfaces 31 of the lower lid members 3 .
  • the crystal resonator plates 2 are disposed such that the locations of the third joining material 53 formed on the joining surfaces 32 of the lower lid members 3 substantially match the locations of the first joining material 51 formed on the one main surfaces 201 of the frame portions 28 of the crystal resonator plates in plan view.
  • the crystal resonator plates 2 are also disposed such that the locations of the second joining electrodes 33 formed on the one main surface 31 of the lower lid members 3 substantially match the locations of the Au-plated layers 50 formed on the first joining electrodes 25 of the crystal resonator plates 2 in plan view.
  • individual upper lid members 4 are disposed at positions determined by the image recognition means on the other main surfaces 202 of the frame portions 28 of the crystal resonator plates 2 so that the one main surfaces 41 of the upper lid members face the other main surfaces 22 of the crystal resonator plates.
  • the upper lid members 4 are disposed such that the locations of the second joining material 52 formed on the other main surfaces 202 of the frame portions 28 of the crystal resonator plates 2 substantially match the locations of the fourth joining material 54 formed on the joining surfaces 42 of the upper lid members 4 in plan view.
  • the lower lid members 3 , the crystal resonator plates 2 , and the upper lid members 4 are temporarily joined to one another, using ultrasonic waves.
  • other manufacturing processes such as degassing of the internal spaces 12 and adjustment for the oscillation frequency
  • the lower lid members 3 , the crystal resonator plates 2 , and the upper lid members 4 are permanently joined to one another by heating and melting (discussed later).
  • the lower lid members 3 , the crystal resonator plates 2 , and the upper lid members 4 that have been joined temporarily are placed in an environment in which the temperature is increased to a predetermined temperature, and are permanently joined to one another by melting the joining material (the first joining material 51 , the second joining material 52 , the third joining material 53 , and the fourth joining material 54 ) formed on the members (the lower lid members 3 , the crystal resonator plates 2 , and the upper lid members 4 ). More specifically, the first joining material 51 and the third joining material 53 are joined to form the joining material 5 , by which the crystal resonator plates 2 and the lower lid members 3 are joined to each other.
  • Such joining of the crystal resonator plates 2 and the lower lid members 3 by the joining material 5 enables the excitation electrodes 23 formed on the one main surfaces 21 of the crystal resonator plates 2 to be hermetically sealed as shown in FIG. 1 .
  • the second joining material 52 and the fourth joining material 54 are joined by heating and melting to form the joining material 5 , by which the crystal resonator plates 2 and the upper lid members 4 are joined to each other.
  • Such joining of the crystal resonator plates 2 and the upper lid members 4 by the joining material 5 enables the excitation electrodes 23 formed on the other main surfaces 22 of the crystal resonator plates 2 to be hermetically sealed as shown in FIG. 1 .
  • Embodiment 1 although the lower lid members 3 , the crystal resonator plates 2 , and the upper lid members 4 are temporarily and permanently joined to one another under a vacuum atmosphere, the present invention is not intended to be limited thereto, and they may be joined under an atmosphere of an inert gas such as nitrogen.
  • the substrates of the joining regions of the constituent members (the lower lid member 3 and the upper lid member 4 ) of the crystal resonator 1 have roughened surfaces, and micro-unevenness formed by such surface roughening on the substrate surfaces of the joining regions of the lower lid member 3 and the upper lid member 4 functions as “wedges” to act against horizontal stress.
  • a so-called anchor effect is produced and improves the joining strength between the joining material 5 and the roughed substrate surfaces of the joining regions of the lower lid member 3 and the upper lid member 4 .
  • the method for etching the constituent members of the crystal resonator 1 according to Embodiment 1 includes the metal film formation step, the diffusion step, and the etching step.
  • part of at least one main surfaces of the constituent members whose surface conditions are like mirror-finished surfaces having very little unevenness can be roughened. More specifically, regions not to be roughened are covered and thereby protected with a resin or the like, whereas a large number of micropores are formed in the substrate surfaces of regions to be roughened by not forming a protective film such as a resist and thereby causing an etchant to penetrate into the substrates of the constituent members through the metal film (diffusion layer) where metal diffusion has occurred.
  • the manufacturing method for the crystal resonator 1 described in Embodiment 1 that includes the metal film formation step, the diffusion step, and the etching step enables surface roughening of part of the one main surfaces 31 and 41 of the lower lid member 3 and the upper lid member 4 whose surface conditions are like mirror-finished surfaces having very little unevenness. More specifically, regions not to be roughened are covered and thereby protected with a resin or the like, whereas a number of micropores are formed in the surfaces of regions to be roughened by not forming a protective film such as a resist and thereby causing an etchant to penetrate into the substrates of the lower lid member 3 and the upper lid member 4 through the metal film (diffusion layer) where metal diffusion has occurred. This enables selective surface roughening.
  • the manufacturing cost of the crystal resonator 1 can be reduced because interatomic bonding that was required regarding joining in the conventional technology is not an absolute necessity.
  • the upper lid member 4 and the lower lid member 3 are made of crystal, and the crystal resonator plate 2 is made of crystal.
  • the metal film formation step involves forming a two-layer configuration of a Cr layer and an Au layer by forming the Cr layer on the substrates of the upper lid member 4 and the lower lid member 3 and laminating the Au layer on the Cr layer so as to form a metal film.
  • the diffusion step involves roughening the substrates of the upper lid member 4 and the lower lid member 3 by diffusing Cr in the Cr layer into Au in the Au layer, performing wet etching using an etchant that is corrosive to Cr and crystal, and thereby forming a large number of micropores in the substrate surfaces of the upper lid member 4 and the lower lid member 3 .
  • the use of crystal for the upper lid member 4 and the lid member 3 provides favorable adhesion to the crystal resonator plate 2 made of crystal.
  • the use of Au that is corrosion resistant to the etchant enables the etchant to penetrate into the substrates of the upper lid member 4 and the lid member 3 without causing corrosion of the metal film, even if wet etching is performed through the metal film in which Cr is diffused. This produces a large number of micropores in the substrate surfaces of the upper lid member 4 and the lid member 3 under the metal film where metal diffusion has occurred and roughens the substrate surfaces.
  • the resonating portion 20 has an inverted mesa shape with the rim portion 26 formed along the outer periphery of the resonating portion 20 , and the thin-walled portion 27 is formed outside the resonating portion 20 .
  • the present invention is not intended to be limited to such an inverted mesa-shaped configuration.
  • a configuration is possible in which a flat plate partly formed with through holes is provided inside a frame portion, without forming a thin-walled portion.
  • the joining material 5 may be configured of Cr, Au, and Ge, for example.
  • a plated laminated film made of Au and Sn, for example, or a plated alloy layer made of Au and Sn, for example may be formed on the crystal resonator plate 1 side, and an Au-plated layer (a plated layer made of a single type of metallic element) may be formed on the lower lid member 3 side and the upper lid member 4 side.
  • crystal is used as a material for two package bases, materials other than crystal, such as glass or sapphire, may be used.
  • FIG. 12 A modification of Embodiment 1 according to the present invention is shown in FIG. 12 .
  • the modification of FIG. 12 is an example in which a target for surface roughening is a joining region of the crystal resonator plate 2 , instead of the joining regions of the lower lid member 3 and the upper lid member 4 . Even with such a configuration, it is possible to improve the joining strength between the crystal resonator plate 2 and the joining material 5 . Note that, in such a configuration, the surfaces of joining regions to be roughened may be both of the main surface entirelys 201 and 202 of the frame portion 28 .
  • the joining regions of the lower lid member 3 and the upper lid member 4 are subjected to surface roughening, the present invention is not intended to be limited thereto.
  • the surfaces of the third joining material 53 and the fourth joining material 54 formed on the surface-roughened substrates of the joining regions of the lower lid member 3 and the upper lid member 4 may be roughened as shown in FIG. 13 .
  • the joining regions of the lower lid member 3 and the upper lid member 4 as well as the third joining material 53 and the fourth joining material 54 have roughened surfaces.
  • the joining regions of the lower lid member 3 and the upper lid member 4 are subjected to surface roughening through the manufacturing steps shown in FIGS. 3 to 11 , the present invention is not intended to be limited thereto.
  • the surfaces of the joining regions of the lower lid member 3 and the upper lid member 4 may be roughened using manufacturing methods as shown in FIGS. 14 to 17 .
  • a Cr layer is formed by vapor deposition on the one main surfaces 31 and 41 of the crystal substrates of the lower lid member 3 and the upper lid member 4 , and the wafer is charged into an etchant (a solution of ammonium fluoride) and subjected to wet etching (see FIG. 14 ). At this time, the etching roughens the surface of the Cr layer, and the degree of surface roughening increases in proportion to the duration of wet etching (see FIG. 15 ).
  • an etchant a solution of ammonium fluoride
  • Continuously performing wet etching produces unevenness on the one main surfaces 31 and 41 of the crystal substrates of the lower lid member 3 and the upper lid member 4 and accordingly roughens the one main surfaces 31 and 41 of the crystal substrates of the lower lid member 3 and the upper lid member 4 , as shown in FIG. 16 .
  • a Cr layer is formed by vapor deposition in scattered locations on the one main surfaces 31 and 41 of the crystal substrates of the lower lid member 3 and the upper lid member 4 .
  • the lower lid member 3 and the upper lid member 4 shown in FIG. 17 are then charged into an etchant (a solution of ammonium fluoride) and subjected to wet etching. Continuously performing wet etching produces unevenness on the one main surfaces 31 and 41 of the crystal substrates of the lower lid member 3 and the upper lid member 4 and accordingly roughens the one main surfaces 31 and 41 of the crystal substrates of the lower lid member 3 and the upper lid member 4 , as shown in FIG. 16 .
  • an etchant a solution of ammonium fluoride
  • vapor deposition techniques and photolithographic techniques may be used for the manufacture of the lower lid member 3 , the upper lid member 4 , and the crystal resonator plate 2 as described above, and a step of forming a large number of small holes at random locations in the Cr layer may further be added to the process.
  • etching may be performed using, as a mask, a Cr layer in which a large number of small holes are formed at random locations, which enables a large number of small holes to be formed in the lower lid member 3 , the upper lid member 4 , and the crystal resonator plate 2 .
  • Embodiment 2 according to the present invention will be described with reference to FIG. 18 , taking the example of a crystal resonator using a piezoelectric resonator plate as in Embodiment 1 described above.
  • FIG. 18 is a cross-sectional view of a crystal resonator 1 taken along the long side of a crystal resonator plate 2 according to Embodiment 2. Note that, in Embodiment 2, the same reference numerals have been given to constituent members that are the same as in Embodiment 1, and parts of descriptions thereof have been omitted. Also, parts of the configuration of Embodiment 2 that are the same as those of Embodiment 1 have similar effects to those of Embodiment 1. Accordingly, the following description of Embodiment 2 focuses on differences from Embodiment 1.
  • both joining regions of the upper lid member 4 and the lower lid member 3 have roughened surfaces in Embodiment 2. Both of the joining regions of the upper lid member 4 and the lower lid member 3 are formed wider than the joining region of the crystal resonator plate 2 , inwardly of the planar direction of their one main surfaces 31 and 41 in plan view.
  • the fluid joining material 5 is prevented from moving inwardly of the crystal resonator 1 .
  • a fillet of the joining material 5 is more easily formed toward the joining regions (surface-roughened region) of the lower lid member 3 and the upper lid member 4 that are formed wider inwardly. This fillet provides stronger joining of the lower lid member 3 , the upper lid member 4 , and the crystal resonator plate 2 . That is, controlling the surface-roughened regions of the lower lid member 3 and the upper lid member 4 enables control of a forming region of the joining material 5 where the fillet is to be formed.
  • Embodiment 3 according to the present invention will be described with reference to FIG. 19 , taking the example of a crystal resonator using a crystal resonator plate as a piezoelectric resonator plate as in Embodiment 1 described above.
  • FIG. 19 is a cross-sectional view of a crystal resonator 1 taken along the long side of a crystal resonator plate 2 according to Embodiment 3. Note that, in Embodiment 3, the same reference numerals have been given to constituent members that are the same as in Embodiment 1, and parts of descriptions thereof have been omitted. Also, parts of the configuration of Embodiment 3 that are the same as those of Embodiment 1 have similar effects to those of Embodiment 1. Accordingly, the following description of Embodiment 3 focuses on differences from Embodiment 1.
  • the entire one main surfaces 31 and 41 of the lower lid member 3 and the upper lid member 4 where the crystal resonator plate 2 is joined are roughened as shown in FIG. 19 .
  • the entirely roughened one main surface 31 improves the adhesion of the electrode pattern to the one main surface 31 .
  • the present invention is not intended to be limited thereto, and the entire other main surface 37 of the lower lid member 3 may be subjected to surface roughening.
  • the substrate surfaces of regions where an external connection terminal and an electrode pattern are formed may be roughened as shown in FIG. 20 . That is, the above-described effects can be achieved as long as the substrates of at least main surface regions where terminals, such as external connection terminals, and electrode patterns are formed have roughened surfaces.
  • Such surface roughening performed on the substrate of the joining region of the lower lid member 3 where external connection terminals are formed is also applicable to Embodiments 1 and 2 described above and Embodiments 4 and 5 described below.
  • Embodiment 4 according to the present invention will be described with reference to FIG. 21 , taking the example of a crystal resonator using a crystal resonator plate as a piezoelectric resonator plate as in Embodiment 1 described above.
  • FIG. 21 is a cross-sectional view of a crystal resonator 1 taken along the long side of a crystal resonator plate 2 according to Embodiment 4. Note that, in Embodiment 4, the same reference numerals have been given to constituent members that are the same as in Embodiment 1, and parts of descriptions thereof have been omitted. Also, parts of the configuration of Embodiment 4 that are the same as those of Embodiment 1 have similar effects to those of Embodiment 1. Accordingly, the following description of Embodiment 4 focuses on differences from Embodiment 1.
  • joining regions of both main surfaces 201 and 202 of the frame portion 28 of the crystal resonator plate 2 have roughened surfaces.
  • the roughened surfaces of the joining regions of the crystal resonator plate 2 are formed through the surface roughening process as described above in Embodiment 1. Such surface roughening produces an anchor effect between the joining material 5 and the frame portion 28 and accordingly improves the joining strength between the crystal resonator plate 2 , and the lower lid member 3 and the upper lid member 4 .
  • a multi-surface joining portion for joining the joining material 5 to a plurality of surfaces having different planar directions is provided in the joining region of the lower lid member 3 and its vicinity at a joining site 13 between the lower lid member 3 and the crystal resonator plate 2 .
  • an enlargement preventing portion for preventing a joining region to be joined to the joining material 5 from being enlarged is provided outside the multi-surface joining portion.
  • a multi-surface joining portion for joining the joining material 5 to a plurality of surfaces having different planar directions is provided in the joining region of the upper lid member 4 and its vicinity at a joining site 14 between the upper lid member 4 and the crystal resonator plate 2 .
  • an enlargement preventing portion for preventing a joining region to be joined to the joining material 5 from being enlarged is provided outside the multi-surface joining portion.
  • the multi-surface joining portions and the enlargement preventing portions are configured by forming two grooves 8 aligned along the outer periphery of the one main surfaces 31 and 41 of the lower lid member 3 and the upper lid member 4 . More specifically, forming the two grooves 8 produces a protrusion 6 therebetween that serves as the multi-surface joining portion, and recesses 7 formed continuous to the protrusion 6 outside the protrusion 6 serve as the enlargement preventing portions.
  • the protrusion 6 has an end face 61 and a side face 62 , and the joining material 5 is joined to the protrusion 6 .
  • the recesses 7 are formed outside the protrusion 6 in the planar direction of the one main surfaces 31 and 41 in plan view.
  • the provision of the multi-surface joining portions and the enlargement preventing portions in the lower lid member 3 and the upper lid member 4 prevents the joining material 5 from spreading in the main surface direction (planar direction) on the joining surfaces (one main surfaces 31 and 41 ) of the lower lid member 3 and the upper lid member 4 , when the lower lid member 3 and the upper lid member 4 are joined via the joining material 5 with the crystal resonator plate 2 in between.
  • the provision of the multi-surface joining portion in the lower lid member 3 and the upper lid member 4 enables the joining material 5 to be joined to a plurality of surfaces having different planar directions (specifically, the end face 61 and both of the side faces 62 of the protrusion 6 ), thus producing an anchor effect and accordingly increasing the strength of joining to the joining material 5 .
  • the protrusion 6 having a plurality of surfaces forms the multi-surface joining portion, and the joining material 5 is joined to a plurality of surfaces including the end face 61 of the protrusion 6 . Accordingly, an anchor effect is readily produced since the joining material 5 can be joined to a plurality of continuous surfaces having different planar directions.
  • the spread of the joining material 5 (wetting) at the joining sites 13 and 14 (joining regions) is a natural phenomenon occurring in heat-melt joining of the joining material 5 .
  • the provision of the multi-surface joining portions in the joining regions of the lower lid member 3 and the upper lid member 4 and the vicinity thereof and the provision of the enlargement preventing portions outside the multi-surface joining portions prevent the joining material 5 from flowing to (wetting) the end face of the crystal resonator 1 and from penetrating into the internal spaces 12 of the crystal resonator 1 , even if the joining material 5 spreads at the joining sites 13 and 14 after joining using the joining material 5 .
  • the joining material 5 is joined to only the protrusion 6 by heating and melting at the time of joining the crystal resonator plate 2 , the upper lid member 3 , and the lower lid member 4 as shown in FIG. 21 , the joining material 5 will fill in the recesses 7 if the amount of the joining material 5 is changed and increased more than that used in Embodiment 4. In this case, an anchor effect also occurs in the recesses 7 and accordingly further increases the joining strength.
  • the multi-surface joining portion and the enlargement preventing portions are provided at both of the joining site 13 between the crystal resonator plate 2 and the lower lid member 3 and the joining site 14 between the crystal resonator plate 2 and the upper lid member 4 , this is merely a preferable example and the present invention is not intended to be limited thereto.
  • the above-described effects can be achieved if the multi-surface joining portion and the enlargement preventing portions are provided at at least one of the joining site 13 between the crystal resonator plate 2 and the lower lid member 3 and the joining site 14 between the crystal resonator plate 2 and the upper lid member 4 .
  • Embodiment 4 although the recesses 61 that are formed continuously to and outside the protrusion 6 , which is the multi-surface joining portion, are provided as enlargement preventing portions, this is merely one embodiment and the present invention is not intended to be limited thereto. The above-described effects can be achieved if the enlargement preventing portions are provided outside the multi-surface joining portion.
  • Embodiment 4 although a single multi-surface joining portion and two enlargement preventing portions are provided for each of the lower lid member 3 and the upper lid member 4 , the number of multi-surface joining portions and the number of enlargement preventing portions are not intended to be limited thereto and may be arbitrary numbers.
  • enlargement preventing portions may, for example, be protruding wall portions that are formed outside the multi-surface joining portion as long as they prevent the joining material 5 from spreading in the main surface direction (planar direction) on the one main surface 31 of the lower lid member 3 , the one main surface 41 of the upper lid member 4 , and both of the main surfaces 21 and 22 of the crystal resonator plate 2 .
  • the enlargement preventing portions are preferably formed to have unevenness in a direction perpendicular to the main surface direction (or in an approximately vertical direction).
  • Embodiment 5 according to the present invention will be described with reference to FIG. 22 , taking the example of a crystal resonator using a crystal resonator plate as a piezoelectric resonator plate as in Embodiment 1 described above.
  • FIG. 22 is a cross-sectional view of a crystal resonator 1 taken along the long side of a crystal resonator plate 2 according to Embodiment 5. Note that, in Embodiment 5, the same reference numerals have been given to constituent members that are the same as in Embodiment 1, and parts of descriptions thereof have been omitted. Also, parts of the configuration of Embodiment 5 that are the same as those of Embodiment 1 have similar effects to those of Embodiment 1. Accordingly, the following description of Embodiment 5 focuses on differences from Embodiment 1.
  • the substrates of both main surfaces 201 and 202 of a frame portion 28 which are joining regions of the crystal resonator plate 2 , have roughened surfaces in Embodiment 5.
  • the substrate of a joining region (one main surface 41 ) of the upper lid member 4 and the substrate of a joining region (one main surface 31 ) of the lower lid member 3 also have roughened surfaces.
  • the roughened substrate surfaces of the joining regions of the upper lid member 4 and the lower lid member 3 are formed rougher than the substrate surface of the joining region of the crystal resonator plate 2 .
  • the upper lid member 4 and the lower lid member 3 have no such an electrode film as the excitation electrodes 23 and the extraction electrodes 24 formed, so it is possible to reduce the influences to be expected on various properties of the crystal resonator 1 .
  • Roughening the substrates of the joining regions of the upper lid member 4 and the lower lid member 3 , together with a resultant anchor effect acting on the joining material 5 produces the crystal resonator 1 with good properties.
  • lid members may be arbitrarily set as long as the excitation electrodes formed on the crystal resonator plate can be hermetically sealed with two lid members.
  • a configuration is possible in which concave portions of two concave lid members are hermetically joined to each other, facing a crystal resonator plate.
  • FIG. 24 is a schematic plan view of such a lower lid member 3
  • FIG. 23 shows the cross-section of the lower lid member 3 taken along line A-A in FIG. 24 .
  • surface roughening is performed on a joining region of the upper lid member 4 where the lower lid member 3 is joined, a joining region of the lower lid member 3 where the upper lid member 4 is joined, a joining region of the lower lid member 3 where the crystal resonator plate 2 is joined electromechanically, and a joining region of the lower lid member 3 where an external connection terminal electrically connected to an external member is formed.
  • the present invention is also applicable to a manufacturing method for other surface-mount piezoelectric resonator devices used in electronic equipment or the like, such a crystal filter, and a crystal oscillator incorporating a crystal resonator in electronic components such as an integrated circuit.
  • the present invention is preferable for the mass production of piezoelectric resonator devices.

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110234052A1 (en) * 2010-03-25 2011-09-29 Nihon Dempa Kogyo Co., Ltd. Quartz-crystal devices and methods for manufacturing same
US20110265298A1 (en) * 2009-01-07 2011-11-03 Daishinku Corporation Method for manufacturing piezoelectric resonator device
US20110291528A1 (en) * 2010-05-28 2011-12-01 Nihon Dempa Kogyo Co., Ltd. Piezoelectric devices exhibiting enhanced resistance to physical impacts and moisture incursion
US20120074816A1 (en) * 2010-09-28 2012-03-29 Nihon Dempa Kogyo Co., Ltd. Piezoelectric Device
US20120280597A1 (en) * 2010-01-29 2012-11-08 Daishinku Corporation Piezoelectric resonator device and manufacturing method therefor
US9374059B1 (en) * 2015-01-06 2016-06-21 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Film bulk acoustic resonator filter
USD760230S1 (en) * 2014-09-16 2016-06-28 Daishinku Corporation Piezoelectric vibration device
US20170372982A1 (en) * 2016-06-27 2017-12-28 Newport Fab, Llc Dba Jazz Semiconductor Integration of Thermally Conductive but Electrically Isolating Layers with Semiconductor Devices
US20180141800A1 (en) * 2015-03-13 2018-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Mems transducer and method for manufacturing the same
CN109075761A (zh) * 2016-09-16 2018-12-21 株式会社大真空 压电振动器件
US10715104B2 (en) 2015-01-08 2020-07-14 Murata Manufacturing Co., Ltd. Piezoelectric vibration component and method for manufacturing the same

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JP2013051512A (ja) * 2011-08-30 2013-03-14 Nippon Dempa Kogyo Co Ltd 水晶振動子
JP2015002414A (ja) * 2013-06-14 2015-01-05 セイコーインスツル株式会社 電子デバイス
JP2015018872A (ja) * 2013-07-09 2015-01-29 日機装株式会社 窓部材、半導体モジュールおよび窓部材の製造方法
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949294A (en) * 1996-09-20 1999-09-07 Matsushita Electric Industrial Co., Ltd. Reference frequency source oscillator formed from first and second containers
US6590315B2 (en) * 2000-05-26 2003-07-08 William D. Beaver Surface mount quartz crystal resonators and methods for making same

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06303080A (ja) 1993-04-19 1994-10-28 Matsushita Electric Ind Co Ltd 発振子
JPH06310971A (ja) 1993-04-20 1994-11-04 Matsushita Electric Ind Co Ltd 発振子
KR0153039B1 (ko) * 1993-03-15 1998-12-15 사토 후미오 회로기판 및 그 제조방법
JP3319221B2 (ja) * 1995-06-02 2002-08-26 松下電器産業株式会社 振動子の製造方法
JPH1051265A (ja) * 1996-08-02 1998-02-20 Daishinku Co 表面実装型水晶振動子
JPH10308643A (ja) * 1997-05-07 1998-11-17 Murata Mfg Co Ltd 電子部品
WO2001058007A1 (fr) * 2000-01-31 2001-08-09 Kinseki Limited Enceinte pour circuits oscillants utilisant un vibrateur piezo-electrique, son procede de fabrication et oscillateur
JP2002124845A (ja) * 2000-08-07 2002-04-26 Nippon Sheet Glass Co Ltd 水晶振動子パッケージ及びその製造方法
JP2002171150A (ja) * 2000-11-30 2002-06-14 Seiko Epson Corp 圧電デバイスのパッケージ構造
JP2003168949A (ja) * 2001-12-04 2003-06-13 Nippon Dempa Kogyo Co Ltd 表面実装型の小型水晶振動子
JP2004153100A (ja) * 2002-10-31 2004-05-27 Kinseki Ltd 薄板リッド
JP2005184325A (ja) * 2003-12-18 2005-07-07 Nippon Dempa Kogyo Co Ltd 水晶振動子
JP2005197530A (ja) * 2004-01-08 2005-07-21 Murata Mfg Co Ltd 積層セラミック電子部品
JP2005295299A (ja) * 2004-04-01 2005-10-20 Kyocera Corp 圧電部品の製造方法
JP4384546B2 (ja) * 2004-05-28 2009-12-16 京セラ株式会社 電子部品の製造の方法
JP2006180169A (ja) * 2004-12-22 2006-07-06 Kyocera Kinseki Corp 振動子パッケージの製造方法
JP4815800B2 (ja) * 2004-12-28 2011-11-16 株式会社大真空 圧電振動デバイス
US20060255691A1 (en) * 2005-03-30 2006-11-16 Takahiro Kuroda Piezoelectric resonator and manufacturing method thereof
JP2007013384A (ja) * 2005-06-29 2007-01-18 Seiko Epson Corp 圧電振動片の製造方法、圧電振動片
WO2007017992A1 (ja) * 2005-08-10 2007-02-15 Daishinku Corporation 圧電振動デバイスおよびその製造方法
US7745979B2 (en) * 2005-08-22 2010-06-29 Seiko Epson Corporation Piezoelectric device
JP2007274104A (ja) * 2006-03-30 2007-10-18 Daishinku Corp 圧電振動デバイスおよび圧電振動デバイスの製造方法
JP2007306434A (ja) * 2006-05-12 2007-11-22 Epson Toyocom Corp 圧電振動子及びその製造方法
JP5051446B2 (ja) * 2006-12-18 2012-10-17 セイコーエプソン株式会社 圧電振動子の製造方法
WO2008102900A1 (ja) * 2007-02-20 2008-08-28 Nihon Dempa Kogyo Co., Ltd パッケージ型圧電振動子及びパッケージ型圧電振動子の製造方法
JP2008227655A (ja) * 2007-03-09 2008-09-25 Epson Toyocom Corp 圧電振動素子の搭載方法、吸着ノズル、圧電振動子、及び圧電発振器
JP4974756B2 (ja) * 2007-05-09 2012-07-11 三菱電機株式会社 太陽電池素子の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949294A (en) * 1996-09-20 1999-09-07 Matsushita Electric Industrial Co., Ltd. Reference frequency source oscillator formed from first and second containers
US6590315B2 (en) * 2000-05-26 2003-07-08 William D. Beaver Surface mount quartz crystal resonators and methods for making same

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110265298A1 (en) * 2009-01-07 2011-11-03 Daishinku Corporation Method for manufacturing piezoelectric resonator device
US8991022B2 (en) * 2009-01-07 2015-03-31 Daishinku Corporation Method for manufacturing piezoelectric resonator device
US20120280597A1 (en) * 2010-01-29 2012-11-08 Daishinku Corporation Piezoelectric resonator device and manufacturing method therefor
US8723400B2 (en) * 2010-01-29 2014-05-13 Daishinku Corporation Piezoelectric resonator device and manufacturing method therefor
US8581476B2 (en) * 2010-03-25 2013-11-12 Nihon Dempa Kogyo Co., Ltd. Quartz-crystal devices and methods for manufacturing same
US20110234052A1 (en) * 2010-03-25 2011-09-29 Nihon Dempa Kogyo Co., Ltd. Quartz-crystal devices and methods for manufacturing same
US20110291528A1 (en) * 2010-05-28 2011-12-01 Nihon Dempa Kogyo Co., Ltd. Piezoelectric devices exhibiting enhanced resistance to physical impacts and moisture incursion
US8405282B2 (en) * 2010-05-28 2013-03-26 Nihon Dempa Kogyo Co., Ltd. Piezoelectric devices exhibiting enhanced resistance to physical impacts and moisture incursion
US20120074816A1 (en) * 2010-09-28 2012-03-29 Nihon Dempa Kogyo Co., Ltd. Piezoelectric Device
US8766513B2 (en) * 2010-09-28 2014-07-01 Nihon Dempa Kogyo Co., Ltd. Piezoelectric device
USD767571S1 (en) 2014-09-16 2016-09-27 Daishinku Corporation Piezoelectric vibration device
USD760230S1 (en) * 2014-09-16 2016-06-28 Daishinku Corporation Piezoelectric vibration device
US9374059B1 (en) * 2015-01-06 2016-06-21 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Film bulk acoustic resonator filter
US10715104B2 (en) 2015-01-08 2020-07-14 Murata Manufacturing Co., Ltd. Piezoelectric vibration component and method for manufacturing the same
US20180141800A1 (en) * 2015-03-13 2018-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Mems transducer and method for manufacturing the same
US10829364B2 (en) * 2015-03-13 2020-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. MEMS transducer and method for manufacturing the same
US20170372982A1 (en) * 2016-06-27 2017-12-28 Newport Fab, Llc Dba Jazz Semiconductor Integration of Thermally Conductive but Electrically Isolating Layers with Semiconductor Devices
US10062636B2 (en) * 2016-06-27 2018-08-28 Newport Fab, Llc Integration of thermally conductive but electrically isolating layers with semiconductor devices
CN109075761A (zh) * 2016-09-16 2018-12-21 株式会社大真空 压电振动器件
US11152911B2 (en) * 2016-09-16 2021-10-19 Daishinku Corporation Piezoelectric resonator device

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JP5370371B2 (ja) 2013-12-18
US9406868B2 (en) 2016-08-02
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US20140047687A1 (en) 2014-02-20
WO2010074127A9 (ja) 2010-09-16

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