US20090162991A1 - Process for assembling substrates with low-temperature heat treatments - Google Patents
Process for assembling substrates with low-temperature heat treatments Download PDFInfo
- Publication number
- US20090162991A1 US20090162991A1 US12/296,250 US29625007A US2009162991A1 US 20090162991 A1 US20090162991 A1 US 20090162991A1 US 29625007 A US29625007 A US 29625007A US 2009162991 A1 US2009162991 A1 US 2009162991A1
- Authority
- US
- United States
- Prior art keywords
- temperature
- process according
- levels
- substrate
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 68
- 230000008569 process Effects 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 title claims abstract description 57
- 238000011282 treatment Methods 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 15
- 230000001186 cumulative effect Effects 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000002209 hydrophobic effect Effects 0.000 claims description 6
- 230000003014 reinforcing effect Effects 0.000 claims description 5
- 238000004320 controlled atmosphere Methods 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 claims description 3
- 230000010070 molecular adhesion Effects 0.000 claims description 3
- 230000007547 defect Effects 0.000 description 38
- 208000010392 Bone Fractures Diseases 0.000 description 19
- 206010017076 Fracture Diseases 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000002360 preparation method Methods 0.000 description 12
- 238000000137 annealing Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000007872 degassing Methods 0.000 description 9
- 230000002787 reinforcement Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 229910008045 Si-Si Inorganic materials 0.000 description 5
- 229910006411 Si—Si Inorganic materials 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000003957 acoustic microscopy Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000002045 lasting effect Effects 0.000 description 4
- 210000002381 plasma Anatomy 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007596 consolidation process Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 230000005660 hydrophilic surface Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005305 interferometry Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- -1 Ammonium Peroxide Chemical class 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-N peroxydisulfuric acid Chemical compound OS(=O)(=O)OOS(O)(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000011272 standard treatment Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1059—Splitting sheet lamina in plane intermediate of faces
Definitions
- the invention relates to techniques for assembling substrates.
- These are, for example, silicon plates, plain or covered with fine silicon oxide, with a thickness below 50 nm.
- Substrates 1 and 2 are assembled, one on the other, by the assembly faces 6 and 8 prepared before.
- a complementary treatment, of the bonding or fracture reinforcement type does not necessarily immediately follow a treatment according to the invention.
- a step of another intermediate treatment may take place in the meantime.
- an implantation is produced at a dose of 6 ⁇ 10 16 H + ions at 210 keV through a thermal oxide, which will enable the transfer of 1.56 ⁇ m of Si.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Element Separation (AREA)
- Electroluminescent Light Sources (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
- Combinations Of Printed Boards (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0651290 | 2006-04-10 | ||
FR0651290A FR2899594A1 (fr) | 2006-04-10 | 2006-04-10 | Procede d'assemblage de substrats avec traitements thermiques a basses temperatures |
PCT/EP2007/053428 WO2007116038A1 (fr) | 2006-04-10 | 2007-04-06 | Procede d'assemblage de substrats avec traitements thermiques a basses temperatures |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2007/053428 A-371-Of-International WO2007116038A1 (fr) | 2006-04-10 | 2007-04-06 | Procede d'assemblage de substrats avec traitements thermiques a basses temperatures |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/273,982 Continuation US8530331B2 (en) | 2006-04-10 | 2011-10-14 | Process for assembling substrates with low-temperature heat treatments |
Publications (1)
Publication Number | Publication Date |
---|---|
US20090162991A1 true US20090162991A1 (en) | 2009-06-25 |
Family
ID=37544382
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/296,250 Abandoned US20090162991A1 (en) | 2006-04-10 | 2007-04-06 | Process for assembling substrates with low-temperature heat treatments |
US13/273,982 Active US8530331B2 (en) | 2006-04-10 | 2011-10-14 | Process for assembling substrates with low-temperature heat treatments |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/273,982 Active US8530331B2 (en) | 2006-04-10 | 2011-10-14 | Process for assembling substrates with low-temperature heat treatments |
Country Status (7)
Country | Link |
---|---|
US (2) | US20090162991A1 (de) |
EP (1) | EP2004768B1 (de) |
JP (1) | JP5230601B2 (de) |
AT (1) | ATE440922T1 (de) |
DE (1) | DE602007002178D1 (de) |
FR (1) | FR2899594A1 (de) |
WO (1) | WO2007116038A1 (de) |
Cited By (20)
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US20080277266A1 (en) * | 2007-05-11 | 2008-11-13 | Layman Frederick P | Shape of cone and air input annulus |
WO2011081834A1 (en) * | 2009-12-15 | 2011-07-07 | Sdcmaterials Llc | Pinning and affixing nano-active material |
US8470112B1 (en) | 2009-12-15 | 2013-06-25 | SDCmaterials, Inc. | Workflow for novel composite materials |
US8481449B1 (en) | 2007-10-15 | 2013-07-09 | SDCmaterials, Inc. | Method and system for forming plug and play oxide catalysts |
US8545652B1 (en) | 2009-12-15 | 2013-10-01 | SDCmaterials, Inc. | Impact resistant material |
US8557727B2 (en) | 2009-12-15 | 2013-10-15 | SDCmaterials, Inc. | Method of forming a catalyst with inhibited mobility of nano-active material |
US8669202B2 (en) | 2011-02-23 | 2014-03-11 | SDCmaterials, Inc. | Wet chemical and plasma methods of forming stable PtPd catalysts |
US8668803B1 (en) | 2009-12-15 | 2014-03-11 | SDCmaterials, Inc. | Sandwich of impact resistant material |
US8679433B2 (en) | 2011-08-19 | 2014-03-25 | SDCmaterials, Inc. | Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions |
US8803025B2 (en) | 2009-12-15 | 2014-08-12 | SDCmaterials, Inc. | Non-plugging D.C. plasma gun |
US9126191B2 (en) | 2009-12-15 | 2015-09-08 | SDCmaterials, Inc. | Advanced catalysts for automotive applications |
US9149797B2 (en) | 2009-12-15 | 2015-10-06 | SDCmaterials, Inc. | Catalyst production method and system |
US9156025B2 (en) | 2012-11-21 | 2015-10-13 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
US9427732B2 (en) | 2013-10-22 | 2016-08-30 | SDCmaterials, Inc. | Catalyst design for heavy-duty diesel combustion engines |
US9437474B2 (en) | 2012-09-05 | 2016-09-06 | Commissariat à l'énergie atomique et aux énergies alternative | Method for fabricating microelectronic devices with isolation trenches partially formed under active regions |
US9511352B2 (en) | 2012-11-21 | 2016-12-06 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
US9517448B2 (en) | 2013-10-22 | 2016-12-13 | SDCmaterials, Inc. | Compositions of lean NOx trap (LNT) systems and methods of making and using same |
US9586179B2 (en) | 2013-07-25 | 2017-03-07 | SDCmaterials, Inc. | Washcoats and coated substrates for catalytic converters and methods of making and using same |
US9687811B2 (en) | 2014-03-21 | 2017-06-27 | SDCmaterials, Inc. | Compositions for passive NOx adsorption (PNA) systems and methods of making and using same |
US11081463B2 (en) | 2018-11-09 | 2021-08-03 | Commissariat à l'énergie atomique et aux énergies alternatives | Bonding method with electron-stimulated desorption |
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JP2010045156A (ja) * | 2008-08-12 | 2010-02-25 | Toshiba Corp | 半導体装置の製造方法 |
FR2938119B1 (fr) * | 2008-10-30 | 2011-04-22 | Soitec Silicon On Insulator | Procede de detachement de couches semi-conductrices a basse temperature |
FR2942910B1 (fr) * | 2009-03-06 | 2011-09-30 | Soitec Silicon On Insulator | Procede de fabrication d'une heterostructure visant a reduire l'etat de contrainte en tension du substrat donneur |
FR2990054B1 (fr) * | 2012-04-27 | 2014-05-02 | Commissariat Energie Atomique | Procede de collage dans une atmosphere de gaz presentant un coefficient de joule-thomson negatif. |
JP2014103291A (ja) * | 2012-11-21 | 2014-06-05 | Renesas Electronics Corp | 半導体装置の製造方法 |
FR3040108B1 (fr) | 2015-08-12 | 2017-08-11 | Commissariat Energie Atomique | Procede de fabrication d'une structure semi-conductrice avec collage direct temporaire exploitant une couche poreuse |
FR3085957B1 (fr) | 2018-09-14 | 2021-01-29 | Commissariat Energie Atomique | Procede de collage temporaire avec adhesif thermoplastique incorporant une couronne rigide |
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-
2006
- 2006-04-10 FR FR0651290A patent/FR2899594A1/fr not_active Withdrawn
-
2007
- 2007-04-06 US US12/296,250 patent/US20090162991A1/en not_active Abandoned
- 2007-04-06 EP EP07727896A patent/EP2004768B1/de active Active
- 2007-04-06 AT AT07727896T patent/ATE440922T1/de not_active IP Right Cessation
- 2007-04-06 WO PCT/EP2007/053428 patent/WO2007116038A1/fr active Application Filing
- 2007-04-06 DE DE602007002178T patent/DE602007002178D1/de active Active
- 2007-04-06 JP JP2009504710A patent/JP5230601B2/ja active Active
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2011
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Also Published As
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JP5230601B2 (ja) | 2013-07-10 |
US20120088352A1 (en) | 2012-04-12 |
DE602007002178D1 (de) | 2009-10-08 |
FR2899594A1 (fr) | 2007-10-12 |
ATE440922T1 (de) | 2009-09-15 |
US8530331B2 (en) | 2013-09-10 |
EP2004768B1 (de) | 2009-08-26 |
JP2009533854A (ja) | 2009-09-17 |
EP2004768A1 (de) | 2008-12-24 |
WO2007116038A1 (fr) | 2007-10-18 |
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