US20090162991A1 - Process for assembling substrates with low-temperature heat treatments - Google Patents

Process for assembling substrates with low-temperature heat treatments Download PDF

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Publication number
US20090162991A1
US20090162991A1 US12/296,250 US29625007A US2009162991A1 US 20090162991 A1 US20090162991 A1 US 20090162991A1 US 29625007 A US29625007 A US 29625007A US 2009162991 A1 US2009162991 A1 US 2009162991A1
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United States
Prior art keywords
temperature
process according
levels
substrate
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US12/296,250
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English (en)
Inventor
Rémi Beneyton
Hubert Moriceau
Frank Fournel
Francois Rieutord
Yannick Le Tiec
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE reassignment COMMISSARIAT A L'ENERGIE ATOMIQUE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BENEYTON, REMI, FOURNEL, FRANK, LE TIEC, YANNICK, MORICEAU, HUBERT, RIEUTORD, FRANCOIS
Publication of US20090162991A1 publication Critical patent/US20090162991A1/en
Abandoned legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10Methods of surface bonding and/or assembly therefor
    • Y10T156/1052Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1059Splitting sheet lamina in plane intermediate of faces

Definitions

  • the invention relates to techniques for assembling substrates.
  • These are, for example, silicon plates, plain or covered with fine silicon oxide, with a thickness below 50 nm.
  • Substrates 1 and 2 are assembled, one on the other, by the assembly faces 6 and 8 prepared before.
  • a complementary treatment, of the bonding or fracture reinforcement type does not necessarily immediately follow a treatment according to the invention.
  • a step of another intermediate treatment may take place in the meantime.
  • an implantation is produced at a dose of 6 ⁇ 10 16 H + ions at 210 keV through a thermal oxide, which will enable the transfer of 1.56 ⁇ m of Si.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Element Separation (AREA)
  • Electroluminescent Light Sources (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
  • Combinations Of Printed Boards (AREA)
US12/296,250 2006-04-10 2007-04-06 Process for assembling substrates with low-temperature heat treatments Abandoned US20090162991A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0651290 2006-04-10
FR0651290A FR2899594A1 (fr) 2006-04-10 2006-04-10 Procede d'assemblage de substrats avec traitements thermiques a basses temperatures
PCT/EP2007/053428 WO2007116038A1 (fr) 2006-04-10 2007-04-06 Procede d'assemblage de substrats avec traitements thermiques a basses temperatures

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2007/053428 A-371-Of-International WO2007116038A1 (fr) 2006-04-10 2007-04-06 Procede d'assemblage de substrats avec traitements thermiques a basses temperatures

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/273,982 Continuation US8530331B2 (en) 2006-04-10 2011-10-14 Process for assembling substrates with low-temperature heat treatments

Publications (1)

Publication Number Publication Date
US20090162991A1 true US20090162991A1 (en) 2009-06-25

Family

ID=37544382

Family Applications (2)

Application Number Title Priority Date Filing Date
US12/296,250 Abandoned US20090162991A1 (en) 2006-04-10 2007-04-06 Process for assembling substrates with low-temperature heat treatments
US13/273,982 Active US8530331B2 (en) 2006-04-10 2011-10-14 Process for assembling substrates with low-temperature heat treatments

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/273,982 Active US8530331B2 (en) 2006-04-10 2011-10-14 Process for assembling substrates with low-temperature heat treatments

Country Status (7)

Country Link
US (2) US20090162991A1 (de)
EP (1) EP2004768B1 (de)
JP (1) JP5230601B2 (de)
AT (1) ATE440922T1 (de)
DE (1) DE602007002178D1 (de)
FR (1) FR2899594A1 (de)
WO (1) WO2007116038A1 (de)

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US20080277266A1 (en) * 2007-05-11 2008-11-13 Layman Frederick P Shape of cone and air input annulus
WO2011081834A1 (en) * 2009-12-15 2011-07-07 Sdcmaterials Llc Pinning and affixing nano-active material
US8470112B1 (en) 2009-12-15 2013-06-25 SDCmaterials, Inc. Workflow for novel composite materials
US8481449B1 (en) 2007-10-15 2013-07-09 SDCmaterials, Inc. Method and system for forming plug and play oxide catalysts
US8545652B1 (en) 2009-12-15 2013-10-01 SDCmaterials, Inc. Impact resistant material
US8557727B2 (en) 2009-12-15 2013-10-15 SDCmaterials, Inc. Method of forming a catalyst with inhibited mobility of nano-active material
US8669202B2 (en) 2011-02-23 2014-03-11 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PtPd catalysts
US8668803B1 (en) 2009-12-15 2014-03-11 SDCmaterials, Inc. Sandwich of impact resistant material
US8679433B2 (en) 2011-08-19 2014-03-25 SDCmaterials, Inc. Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions
US8803025B2 (en) 2009-12-15 2014-08-12 SDCmaterials, Inc. Non-plugging D.C. plasma gun
US9126191B2 (en) 2009-12-15 2015-09-08 SDCmaterials, Inc. Advanced catalysts for automotive applications
US9149797B2 (en) 2009-12-15 2015-10-06 SDCmaterials, Inc. Catalyst production method and system
US9156025B2 (en) 2012-11-21 2015-10-13 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9427732B2 (en) 2013-10-22 2016-08-30 SDCmaterials, Inc. Catalyst design for heavy-duty diesel combustion engines
US9437474B2 (en) 2012-09-05 2016-09-06 Commissariat à l'énergie atomique et aux énergies alternative Method for fabricating microelectronic devices with isolation trenches partially formed under active regions
US9511352B2 (en) 2012-11-21 2016-12-06 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9517448B2 (en) 2013-10-22 2016-12-13 SDCmaterials, Inc. Compositions of lean NOx trap (LNT) systems and methods of making and using same
US9586179B2 (en) 2013-07-25 2017-03-07 SDCmaterials, Inc. Washcoats and coated substrates for catalytic converters and methods of making and using same
US9687811B2 (en) 2014-03-21 2017-06-27 SDCmaterials, Inc. Compositions for passive NOx adsorption (PNA) systems and methods of making and using same
US11081463B2 (en) 2018-11-09 2021-08-03 Commissariat à l'énergie atomique et aux énergies alternatives Bonding method with electron-stimulated desorption

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045156A (ja) * 2008-08-12 2010-02-25 Toshiba Corp 半導体装置の製造方法
FR2938119B1 (fr) * 2008-10-30 2011-04-22 Soitec Silicon On Insulator Procede de detachement de couches semi-conductrices a basse temperature
FR2942910B1 (fr) * 2009-03-06 2011-09-30 Soitec Silicon On Insulator Procede de fabrication d'une heterostructure visant a reduire l'etat de contrainte en tension du substrat donneur
FR2990054B1 (fr) * 2012-04-27 2014-05-02 Commissariat Energie Atomique Procede de collage dans une atmosphere de gaz presentant un coefficient de joule-thomson negatif.
JP2014103291A (ja) * 2012-11-21 2014-06-05 Renesas Electronics Corp 半導体装置の製造方法
FR3040108B1 (fr) 2015-08-12 2017-08-11 Commissariat Energie Atomique Procede de fabrication d'une structure semi-conductrice avec collage direct temporaire exploitant une couche poreuse
FR3085957B1 (fr) 2018-09-14 2021-01-29 Commissariat Energie Atomique Procede de collage temporaire avec adhesif thermoplastique incorporant une couronne rigide

Citations (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US514235A (en) * 1894-02-06 Patrick molyneux
US5152857A (en) * 1990-03-29 1992-10-06 Shin-Etsu Handotai Co., Ltd. Method for preparing a substrate for semiconductor devices
US5395788A (en) * 1991-03-15 1995-03-07 Shin Etsu Handotai Co., Ltd. Method of producing semiconductor substrate
US5539245A (en) * 1991-11-18 1996-07-23 Mitsubishi Materials Silicon Corporation Semiconductor substrate having a gettering layer
US5834812A (en) * 1994-11-30 1998-11-10 Sibond, L.L.C. Edge stripped BESOI wafer
US5869386A (en) * 1995-09-28 1999-02-09 Nec Corporation Method of fabricating a composite silicon-on-insulator substrate
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US5937312A (en) * 1995-03-23 1999-08-10 Sibond L.L.C. Single-etch stop process for the manufacture of silicon-on-insulator wafers
US6010579A (en) * 1997-05-12 2000-01-04 Silicon Genesis Corporation Reusable substrate for thin film separation
US6303468B1 (en) * 1997-08-12 2001-10-16 Commissariat A L'energie Atomique Method for making a thin film of solid material
US6309950B1 (en) * 1998-08-04 2001-10-30 Micron Technology, Inc. Methods for making silicon-on-insulator structures
US6326279B1 (en) * 1999-03-26 2001-12-04 Canon Kabushiki Kaisha Process for producing semiconductor article
US6387815B2 (en) * 1993-06-07 2002-05-14 Canon Kabushiki Kaisha Method of manufacturing semiconductor substrate
US20020068419A1 (en) * 1997-12-26 2002-06-06 Kiyofumi Sakaguchi Semiconductor article and method of manufacturing the same
US20020187595A1 (en) * 1999-08-04 2002-12-12 Silicon Evolution, Inc. Methods for silicon-on-insulator (SOI) manufacturing with improved control and site thickness variations and improved bonding interface quality
US20030008478A1 (en) * 2000-03-29 2003-01-09 Takao Abe Production method for silicon wafer and soi wafer, and soi wafer
US20030092244A1 (en) * 2000-04-28 2003-05-15 Hiroyuki Oi Method and apparatus for producing bonded dielectric separation wafer
US20030094674A1 (en) * 2000-10-25 2003-05-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor wafer
US20030113984A1 (en) * 2000-05-16 2003-06-19 Mamoru Okada Semiconductor wafer thinning method, and thin semiconductor wafer
US6624047B1 (en) * 1999-02-02 2003-09-23 Canon Kabushiki Kaisha Substrate and method of manufacturing the same
US6664169B1 (en) * 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
US20040206444A1 (en) * 2003-03-14 2004-10-21 Fabrice Letertre Methods for forming an assembly for transfer of a useful layer
US20040212557A1 (en) * 2001-01-18 2004-10-28 Bon-Cheol Koo Plasma display panel and driving method thereof
US6815309B2 (en) * 2001-12-21 2004-11-09 S.O.I.Tec Silicon On Insulator Technologies S.A. Support-integrated donor wafers for repeated thin donor layer separation
US6828216B2 (en) * 2002-05-02 2004-12-07 S.O.I. Tec Silicon On Insulator Technologies S.A. Process for detaching layers of material
US6838358B2 (en) * 2003-05-26 2005-01-04 S.O.I.Tec Silicon On Insulator Technologies S.A. Method of manufacturing a wafer
US6841848B2 (en) * 2003-06-06 2005-01-11 Analog Devices, Inc. Composite semiconductor wafer and a method for forming the composite semiconductor wafer
US6936523B2 (en) * 2002-12-10 2005-08-30 S.O.I.Tec Silicon On Insulator Technologies S.A. Two-stage annealing method for manufacturing semiconductor substrates
US20060055003A1 (en) * 2004-05-19 2006-03-16 Sumco Corporation Bonded SOI substrate, and method for manufacturing the same
US7205211B2 (en) * 2002-03-28 2007-04-17 Commisariat L'energie Atomique Method for handling semiconductor layers in such a way as to thin same

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179110A (ja) 1986-02-03 1987-08-06 Toshiba Corp 直接接着型半導体基板の製造方法
JP2535957B2 (ja) 1987-09-29 1996-09-18 ソニー株式会社 半導体基板
JPH02194519A (ja) 1989-01-23 1990-08-01 Nippon Telegr & Teleph Corp <Ntt> 複合半導体基板およびその製造方法
JPH0389519A (ja) 1989-08-31 1991-04-15 Sony Corp 半導体基板の製法
JP2662495B2 (ja) 1993-06-28 1997-10-15 住友シチックス株式会社 接着半導体基板の製造方法
JP2856030B2 (ja) 1993-06-29 1999-02-10 信越半導体株式会社 結合ウエーハの製造方法
JPH0917984A (ja) 1995-06-29 1997-01-17 Sumitomo Sitix Corp 貼り合わせsoi基板の製造方法
JP3352896B2 (ja) 1997-01-17 2002-12-03 信越半導体株式会社 貼り合わせ基板の作製方法
JP3352902B2 (ja) 1997-02-21 2002-12-03 信越半導体株式会社 貼り合わせ基板の作製方法
JP3132425B2 (ja) 1997-06-20 2001-02-05 日本電気株式会社 衛星イントラネットサービスにおける通信時間短縮方式
US6417108B1 (en) 1998-02-04 2002-07-09 Canon Kabushiki Kaisha Semiconductor substrate and method of manufacturing the same
JP3635200B2 (ja) 1998-06-04 2005-04-06 信越半導体株式会社 Soiウェーハの製造方法
JPH11354761A (ja) 1998-06-09 1999-12-24 Sumitomo Metal Ind Ltd Soi基板及びその製造方法
JP3515917B2 (ja) 1998-12-01 2004-04-05 シャープ株式会社 半導体装置の製造方法
DE19943101C2 (de) 1999-09-09 2002-06-20 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer gebondeten Halbleiterscheibe
JP3632531B2 (ja) 1999-11-17 2005-03-23 株式会社デンソー 半導体基板の製造方法
EP1189266B1 (de) 2000-03-29 2017-04-05 Shin-Etsu Handotai Co., Ltd. Methode zur herstellung einer siliziumhalbleiterscheibe und einer soi-scheibe soiwe soi-scheibe
JP2003078115A (ja) 2001-08-30 2003-03-14 Shin Etsu Handotai Co Ltd Soiウェーハのレーザーマーク印字方法、及び、soiウェーハ
KR100577627B1 (ko) 2002-05-20 2006-05-10 주식회사 사무코 접합기판과 그 제조방법 및 그것에 사용되는 웨이퍼 외주가압용 지그류
EP1523773B1 (de) 2002-07-17 2010-09-22 S.O.I.Tec Silicon on Insulator Technologies Verfahren zur glättung des umrisses einer auf ein stützsubstrat übertragenen nutschicht
FR2852445B1 (fr) 2003-03-14 2005-05-20 Soitec Silicon On Insulator Procede de realisation de substrats ou composants sur substrats avec transfert de couche utile, pour la microelectronique, l'optoelectronique ou l'optique
JPWO2005027217A1 (ja) * 2003-09-08 2007-11-08 株式会社Sumco Soiウェーハおよびその製造方法
FR2860842B1 (fr) * 2003-10-14 2007-11-02 Tracit Technologies Procede de preparation et d'assemblage de substrats
JP4918229B2 (ja) 2005-05-31 2012-04-18 信越半導体株式会社 貼り合わせウエーハの製造方法
FR2935535B1 (fr) 2008-09-02 2010-12-10 S O I Tec Silicon On Insulator Tech Procede de detourage mixte.

Patent Citations (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US514235A (en) * 1894-02-06 Patrick molyneux
US5152857A (en) * 1990-03-29 1992-10-06 Shin-Etsu Handotai Co., Ltd. Method for preparing a substrate for semiconductor devices
US5395788A (en) * 1991-03-15 1995-03-07 Shin Etsu Handotai Co., Ltd. Method of producing semiconductor substrate
US5539245A (en) * 1991-11-18 1996-07-23 Mitsubishi Materials Silicon Corporation Semiconductor substrate having a gettering layer
US6387815B2 (en) * 1993-06-07 2002-05-14 Canon Kabushiki Kaisha Method of manufacturing semiconductor substrate
US5834812A (en) * 1994-11-30 1998-11-10 Sibond, L.L.C. Edge stripped BESOI wafer
US5937312A (en) * 1995-03-23 1999-08-10 Sibond L.L.C. Single-etch stop process for the manufacture of silicon-on-insulator wafers
US5869386A (en) * 1995-09-28 1999-02-09 Nec Corporation Method of fabricating a composite silicon-on-insulator substrate
US6632724B2 (en) * 1997-05-12 2003-10-14 Silicon Genesis Corporation Controlled cleaving process
US6010579A (en) * 1997-05-12 2000-01-04 Silicon Genesis Corporation Reusable substrate for thin film separation
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
US6303468B1 (en) * 1997-08-12 2001-10-16 Commissariat A L'energie Atomique Method for making a thin film of solid material
US20020068419A1 (en) * 1997-12-26 2002-06-06 Kiyofumi Sakaguchi Semiconductor article and method of manufacturing the same
US6309950B1 (en) * 1998-08-04 2001-10-30 Micron Technology, Inc. Methods for making silicon-on-insulator structures
US6624047B1 (en) * 1999-02-02 2003-09-23 Canon Kabushiki Kaisha Substrate and method of manufacturing the same
US6326279B1 (en) * 1999-03-26 2001-12-04 Canon Kabushiki Kaisha Process for producing semiconductor article
US20040055894A1 (en) * 1999-06-08 2004-03-25 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
US6664169B1 (en) * 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
US20020187595A1 (en) * 1999-08-04 2002-12-12 Silicon Evolution, Inc. Methods for silicon-on-insulator (SOI) manufacturing with improved control and site thickness variations and improved bonding interface quality
US20030008478A1 (en) * 2000-03-29 2003-01-09 Takao Abe Production method for silicon wafer and soi wafer, and soi wafer
US20030092244A1 (en) * 2000-04-28 2003-05-15 Hiroyuki Oi Method and apparatus for producing bonded dielectric separation wafer
US20030113984A1 (en) * 2000-05-16 2003-06-19 Mamoru Okada Semiconductor wafer thinning method, and thin semiconductor wafer
US20030094674A1 (en) * 2000-10-25 2003-05-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor wafer
US20040212557A1 (en) * 2001-01-18 2004-10-28 Bon-Cheol Koo Plasma display panel and driving method thereof
US6815309B2 (en) * 2001-12-21 2004-11-09 S.O.I.Tec Silicon On Insulator Technologies S.A. Support-integrated donor wafers for repeated thin donor layer separation
US7205211B2 (en) * 2002-03-28 2007-04-17 Commisariat L'energie Atomique Method for handling semiconductor layers in such a way as to thin same
US6828216B2 (en) * 2002-05-02 2004-12-07 S.O.I. Tec Silicon On Insulator Technologies S.A. Process for detaching layers of material
US6936523B2 (en) * 2002-12-10 2005-08-30 S.O.I.Tec Silicon On Insulator Technologies S.A. Two-stage annealing method for manufacturing semiconductor substrates
US20040206444A1 (en) * 2003-03-14 2004-10-21 Fabrice Letertre Methods for forming an assembly for transfer of a useful layer
US6838358B2 (en) * 2003-05-26 2005-01-04 S.O.I.Tec Silicon On Insulator Technologies S.A. Method of manufacturing a wafer
US6841848B2 (en) * 2003-06-06 2005-01-11 Analog Devices, Inc. Composite semiconductor wafer and a method for forming the composite semiconductor wafer
US20060055003A1 (en) * 2004-05-19 2006-03-16 Sumco Corporation Bonded SOI substrate, and method for manufacturing the same

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US9180423B2 (en) 2005-04-19 2015-11-10 SDCmaterials, Inc. Highly turbulent quench chamber
US9599405B2 (en) 2005-04-19 2017-03-21 SDCmaterials, Inc. Highly turbulent quench chamber
US9216398B2 (en) 2005-04-19 2015-12-22 SDCmaterials, Inc. Method and apparatus for making uniform and ultrasmall nanoparticles
US9132404B2 (en) 2005-04-19 2015-09-15 SDCmaterials, Inc. Gas delivery system with constant overpressure relative to ambient to system with varying vacuum suction
US9719727B2 (en) 2005-04-19 2017-08-01 SDCmaterials, Inc. Fluid recirculation system for use in vapor phase particle production system
US8524631B2 (en) 2007-05-11 2013-09-03 SDCmaterials, Inc. Nano-skeletal catalyst
US8906316B2 (en) 2007-05-11 2014-12-09 SDCmaterials, Inc. Fluid recirculation system for use in vapor phase particle production system
US20080277266A1 (en) * 2007-05-11 2008-11-13 Layman Frederick P Shape of cone and air input annulus
US8956574B2 (en) 2007-05-11 2015-02-17 SDCmaterials, Inc. Gas delivery system with constant overpressure relative to ambient to system with varying vacuum suction
US8142619B2 (en) 2007-05-11 2012-03-27 Sdc Materials Inc. Shape of cone and air input annulus
US8051724B1 (en) 2007-05-11 2011-11-08 SDCmaterials, Inc. Long cool-down tube with air input joints
US8574408B2 (en) 2007-05-11 2013-11-05 SDCmaterials, Inc. Fluid recirculation system for use in vapor phase particle production system
US8604398B1 (en) 2007-05-11 2013-12-10 SDCmaterials, Inc. Microwave purification process
US8893651B1 (en) 2007-05-11 2014-11-25 SDCmaterials, Inc. Plasma-arc vaporization chamber with wide bore
US8663571B2 (en) 2007-05-11 2014-03-04 SDCmaterials, Inc. Method and apparatus for making uniform and ultrasmall nanoparticles
US8507401B1 (en) 2007-10-15 2013-08-13 SDCmaterials, Inc. Method and system for forming plug and play metal catalysts
US9186663B2 (en) 2007-10-15 2015-11-17 SDCmaterials, Inc. Method and system for forming plug and play metal compound catalysts
US9737878B2 (en) 2007-10-15 2017-08-22 SDCmaterials, Inc. Method and system for forming plug and play metal catalysts
US8759248B2 (en) 2007-10-15 2014-06-24 SDCmaterials, Inc. Method and system for forming plug and play metal catalysts
US8575059B1 (en) 2007-10-15 2013-11-05 SDCmaterials, Inc. Method and system for forming plug and play metal compound catalysts
US9597662B2 (en) 2007-10-15 2017-03-21 SDCmaterials, Inc. Method and system for forming plug and play metal compound catalysts
US9089840B2 (en) 2007-10-15 2015-07-28 SDCmaterials, Inc. Method and system for forming plug and play oxide catalysts
US8507402B1 (en) 2007-10-15 2013-08-13 SDCmaterials, Inc. Method and system for forming plug and play metal catalysts
US8481449B1 (en) 2007-10-15 2013-07-09 SDCmaterials, Inc. Method and system for forming plug and play oxide catalysts
US9302260B2 (en) 2007-10-15 2016-04-05 SDCmaterials, Inc. Method and system for forming plug and play metal catalysts
US9592492B2 (en) 2007-10-15 2017-03-14 SDCmaterials, Inc. Method and system for forming plug and play oxide catalysts
US8865611B2 (en) 2009-12-15 2014-10-21 SDCmaterials, Inc. Method of forming a catalyst with inhibited mobility of nano-active material
US8906498B1 (en) 2009-12-15 2014-12-09 SDCmaterials, Inc. Sandwich of impact resistant material
US8932514B1 (en) 2009-12-15 2015-01-13 SDCmaterials, Inc. Fracture toughness of glass
US8877357B1 (en) 2009-12-15 2014-11-04 SDCmaterials, Inc. Impact resistant material
US9522388B2 (en) 2009-12-15 2016-12-20 SDCmaterials, Inc. Pinning and affixing nano-active material
US8992820B1 (en) 2009-12-15 2015-03-31 SDCmaterials, Inc. Fracture toughness of ceramics
US8859035B1 (en) 2009-12-15 2014-10-14 SDCmaterials, Inc. Powder treatment for enhanced flowability
US9039916B1 (en) 2009-12-15 2015-05-26 SDCmaterials, Inc. In situ oxide removal, dispersal and drying for copper copper-oxide
US9090475B1 (en) 2009-12-15 2015-07-28 SDCmaterials, Inc. In situ oxide removal, dispersal and drying for silicon SiO2
US8828328B1 (en) 2009-12-15 2014-09-09 SDCmaterails, Inc. Methods and apparatuses for nano-materials powder treatment and preservation
US9119309B1 (en) 2009-12-15 2015-08-25 SDCmaterials, Inc. In situ oxide removal, dispersal and drying
US9126191B2 (en) 2009-12-15 2015-09-08 SDCmaterials, Inc. Advanced catalysts for automotive applications
US8821786B1 (en) 2009-12-15 2014-09-02 SDCmaterials, Inc. Method of forming oxide dispersion strengthened alloys
US9149797B2 (en) 2009-12-15 2015-10-06 SDCmaterials, Inc. Catalyst production method and system
US8803025B2 (en) 2009-12-15 2014-08-12 SDCmaterials, Inc. Non-plugging D.C. plasma gun
US8668803B1 (en) 2009-12-15 2014-03-11 SDCmaterials, Inc. Sandwich of impact resistant material
US8652992B2 (en) 2009-12-15 2014-02-18 SDCmaterials, Inc. Pinning and affixing nano-active material
US8557727B2 (en) 2009-12-15 2013-10-15 SDCmaterials, Inc. Method of forming a catalyst with inhibited mobility of nano-active material
US8545652B1 (en) 2009-12-15 2013-10-01 SDCmaterials, Inc. Impact resistant material
US8470112B1 (en) 2009-12-15 2013-06-25 SDCmaterials, Inc. Workflow for novel composite materials
US9308524B2 (en) 2009-12-15 2016-04-12 SDCmaterials, Inc. Advanced catalysts for automotive applications
US9332636B2 (en) 2009-12-15 2016-05-03 SDCmaterials, Inc. Sandwich of impact resistant material
WO2011081834A1 (en) * 2009-12-15 2011-07-07 Sdcmaterials Llc Pinning and affixing nano-active material
US9533289B2 (en) 2009-12-15 2017-01-03 SDCmaterials, Inc. Advanced catalysts for automotive applications
US8669202B2 (en) 2011-02-23 2014-03-11 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PtPd catalysts
US9216406B2 (en) 2011-02-23 2015-12-22 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PtPd catalysts
US9433938B2 (en) 2011-02-23 2016-09-06 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PTPD catalysts
US8679433B2 (en) 2011-08-19 2014-03-25 SDCmaterials, Inc. Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions
US8969237B2 (en) 2011-08-19 2015-03-03 SDCmaterials, Inc. Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions
US9498751B2 (en) 2011-08-19 2016-11-22 SDCmaterials, Inc. Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions
US9437474B2 (en) 2012-09-05 2016-09-06 Commissariat à l'énergie atomique et aux énergies alternative Method for fabricating microelectronic devices with isolation trenches partially formed under active regions
US9533299B2 (en) 2012-11-21 2017-01-03 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9156025B2 (en) 2012-11-21 2015-10-13 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9511352B2 (en) 2012-11-21 2016-12-06 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9586179B2 (en) 2013-07-25 2017-03-07 SDCmaterials, Inc. Washcoats and coated substrates for catalytic converters and methods of making and using same
US9427732B2 (en) 2013-10-22 2016-08-30 SDCmaterials, Inc. Catalyst design for heavy-duty diesel combustion engines
US9566568B2 (en) 2013-10-22 2017-02-14 SDCmaterials, Inc. Catalyst design for heavy-duty diesel combustion engines
US9517448B2 (en) 2013-10-22 2016-12-13 SDCmaterials, Inc. Compositions of lean NOx trap (LNT) systems and methods of making and using same
US9950316B2 (en) 2013-10-22 2018-04-24 Umicore Ag & Co. Kg Catalyst design for heavy-duty diesel combustion engines
US9687811B2 (en) 2014-03-21 2017-06-27 SDCmaterials, Inc. Compositions for passive NOx adsorption (PNA) systems and methods of making and using same
US10086356B2 (en) 2014-03-21 2018-10-02 Umicore Ag & Co. Kg Compositions for passive NOx adsorption (PNA) systems and methods of making and using same
US10413880B2 (en) 2014-03-21 2019-09-17 Umicore Ag & Co. Kg Compositions for passive NOx adsorption (PNA) systems and methods of making and using same
US11081463B2 (en) 2018-11-09 2021-08-03 Commissariat à l'énergie atomique et aux énergies alternatives Bonding method with electron-stimulated desorption

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ATE440922T1 (de) 2009-09-15
US8530331B2 (en) 2013-09-10
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EP2004768A1 (de) 2008-12-24
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